CN106676472A - Method for transferring ITO thin film - Google Patents
Method for transferring ITO thin film Download PDFInfo
- Publication number
- CN106676472A CN106676472A CN201611166575.6A CN201611166575A CN106676472A CN 106676472 A CN106676472 A CN 106676472A CN 201611166575 A CN201611166575 A CN 201611166575A CN 106676472 A CN106676472 A CN 106676472A
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- Prior art keywords
- thin film
- ito thin
- glue
- copper foil
- shift
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0005—Separation of the coating from the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Laminated Bodies (AREA)
Abstract
The invention discloses a method for transferring an ITO thin film. The method comprises the steps that the ITO thin film with a certain thickness is deposited on copper foil through the magnetron sputtering technology; epoxy resin AB glue with a certain thickness is sprayed on the surface of the ITO thin film; meanwhile, the surface sprayed with the epoxy resin AB glue and a PET film are attached to each other in a rolling mode; heating is conducted for a certain time at a certain temperature, and the epoxy resin AB glue is solidified; and finally, the film is put into ferric nitrate etching liquid to remove the copper foil, cleaning is conducted with deionized water and drying is conducted, and the transferred ITO thin film is obtained. According to the method for transferring the ITO thin film, the situation that the ITO thin film is deposited in high temperature and transferred to a flexible substrate is achieved, the photoelectric property of the ITO thin film of the PET flexible substrate is effectively improved, and the technical problems that in the prior art, the crystalline state cannot be directly realized on the flexible substrate through high temperature deposition, or through the way of improving the deposition process or a thin film preparation method, the improvement of the crystallization property of the ITO thin film of the flexible substrate is not obvious are solved.
Description
Technical field
The invention belongs to transparent conductive film material technical field, and in particular to a kind of method of transfer ito thin film.
Background technology
Ito thin film is a kind of typical transparent conductive semiconductor oxide film material, because it has visible ray high
Saturating rate, low infrared emissivity, excellent electric conductivity, environmental suitability and processability is applied, be widely used to FPD, touch
The industries such as control screen, solar film battery, OLED.
Currently, with the fast development of organic electro-optic device, miniaturization and lighting have turned into important development trend, soft
Property substrate ito thin film material has been subject to the extensive concern of researcher and industrial circle.But, ito thin film is currently deposited on a pet film
When, typically using preparation technology in low temperature.Because the ito thin film prepared under the conditions of low temperature depositing is usually presentation amorphous state, because
And transparent conductive film has the shortcomings that the heat endurance of conduction is poor, visible light transmissivity is low, service life is short, easy to wear,
The physicochemical properties such as its photoelectricity have been difficult to meet flexible flat panel display device part and have become more meticulous the requirement of development, in the urgent need to development has height
Spend the ITO flexible substrate film materials of crystal property.
By the temperature that flexible substrate is typically resistant to is no more than 200 DEG C, and the ito thin film material of crystalline state prepares one
As need 400 DEG C of heating-up temperature, therefore be directly difficult to reality by way of high temperature deposition realizes crystalline state on flexible substrates
It is existing, and pass through to improve the approach of depositing operation or method for manufacturing thin film to the lifting of flexible substrate ito thin film crystal property also simultaneously
It is unobvious.Therefore, real method is first on other substrates by the ito thin film of high temperature deposition crystalline state, then to retransfer
The preparation with crystalline state ito thin film in flexible substrate is realized on to PET film.
The disclosed above- mentioned information in part is used only for understanding of the enhancing to background of the present invention, therefore above- mentioned information in the background
The information for not constituting national prior art known to persons of ordinary skill in the art can be included.
The content of the invention
The purpose of the present invention aims to provide a kind of method for shifting ito thin film, and crystalline state ITO can be realized by the method
To the transfer of PET flexible substrate materials, the photoelectric properties to improving flexible substrate ito thin film have very positive thin-film material
Effect.
The present invention solve above-mentioned technical problem technical scheme be：
A kind of method for shifting ito thin film, comprises the following steps：
Step 1：Certain thickness crystalline state ito thin film is prepared using magnetron sputtering on Copper Foil；
Step 2：Using spraying technology ito thin film the certain thickness AB glue of surface spraying；
Step 3：Thin with PET fitted by roll-in mode in the face that AB glue will be coated；
Step 4：Film after laminating is placed on certain hour is toasted on the warm table of uniform temperature, make AB adhesive curings；
Step 5：Iron nitrate solution is put into etch Copper Foil；
Step 6：It is cleaned by ultrasonic 3 times~4 times with deionized water, is then dried.
Further, the thickness of Copper Foil described in step 1 is 16 μm~30 μm.
Further, the ito thin film of the crystalline state described in step 1 refers to that XRD test results have 222 or 400 oikocrysts
The crystalline state film of phase.
Further, magnetron sputtering described in step 1 includes magnetically controlled DC sputtering and rf magnetron sputtering, the work of its sputtering
Skill is：Back end vacuum is 8.0 × 10-4Pa, sputtering pressure is 0.5Pa~3Pa, and oxygen volume ratio content is 0.5%~20%, lining
Bottom heating-up temperature is 350 DEG C~500 DEG C, and target-substrate distance is 8cm~10cm, and sputtering power is 50W~200W.
Further, certain thickness described in above step 1 be control ito thin film thickness be 100nm~800nm.
Further, certain thickness AB glue described in above step 2 is to control its glue thickness for 5 μm~20 μm.
Further, it, by the Bi-component high-temperature resistant adhesive that epoxy resin is base, is commercially available prod that the above AB glue is.
Further, uniform temperature described in above step 4 be 75 DEG C~80 DEG C, the certain hour be 30 minutes~
120 minutes.
Further, the weight percent concentration of iron nitrate solution described in above step 5 be 10%, the etching when
Between be 2 hours~10 hours.
Advantages and positive effects of the present invention：
1st, the present invention passes through to turn again by with Copper Foil as backing material, having the ito thin film of crystalline state by high temperature deposition, then
Be transferred to the ito thin film of crystalline state in PET flexible substrates by the mode of shifting, realizes the crystalline state ITO in PET flexible substrates thin
The preparation of film, can effectively improve the heat endurance of PET flexible substrate ito thin films, it is seen that light transmission rate is high, and long service life is resistance to
The photoelectricity physicochemical properties such as mill, meet the requirement that flexible flat panel display device part becomes more meticulous.
2nd, the present invention overcomes prior art to be no more than 200 DEG C by the temperature that flexible substrate is typically resistant to, and crystallizes
The ito thin film material of state prepares the heating-up temperature for generally requiring 400 DEG C, it is impossible to directly real on flexible substrates by high temperature deposition
Existing crystalline state, or flexible substrate ito thin film crystal property is carried by improving the approach of depositing operation or method for manufacturing thin film
Rise also and unconspicuous technical problem, reality it is first on other substrates by the ito thin film of high temperature deposition crystalline state, Ran Houzai
The preparation realized with crystalline state ito thin film in flexible substrate is transferred on PET film.
Brief description of the drawings
Fig. 1 is the standby transfer ito thin film of patent system of the present invention with directly the XRD of low temperature depositing ito thin film is contrasted on PET
Collection of illustrative plates；
Fig. 2 be patent system of the present invention it is standby transfer ito thin film with directly on PET low temperature depositing ito thin film visible light-transmissive
Rate collection of illustrative plates.
Identified in figure：1. it is the ito thin film of temperature deposition on PET film；
2. it is the ito thin film being transferred on PET film.
Specific embodiment
For a better understanding of the present invention, with reference to the embodiment content that the present invention is furture elucidated, with optimal enforcement
Example is intended to illustrate thinking of the invention, the implementation of the present invention, however it is not limited to the mode disclosed in optimal enforcement example, all to be based on
It is of the invention to be related to thinking, carry out simple deduction and belonged to replacement, the specific metal or the pattern of nonmetal film for obtaining
Implementation of the invention.
Embodiment 1
A kind of method for shifting ito thin film, specific implementation step is as follows：
Step 1：The ito thin film of crystalline state is prepared using magnetically controlled DC sputtering on Copper Foil：It is substrate material with the Copper Foil of 20 μ m-thicks
Material, by vacuum chamber degree to 8.0 × 10-4Pa, regulation substrate heating temperature is 400 DEG C, and target-substrate distance is 8cm, is passed through argon gas
And oxygen, the volume that wherein oxygen accounts for total gas is 5%, and it is 1.5Pa to adjust the total gas pressure of sputtering, starts shielding power supply,
The ito thin film of 100nm thickness is deposited under the sputtering power of 50W.
Step 2：Using spraying technology, in the epoxide resin AB sol solution of the μ m thick of surface even application 10 of ito thin film.
Step 3：The face that epoxide resin AB sol solution will be coated first is alignd with PET film, then simultaneously by rubber roll roll-in
Laminating, forms the composite membrane of Copper Foil/ITO/ epoxide resin ABs glue/PET.
Step 4：By the composite membrane of the Copper Foil after laminating/ITO/ epoxide resin ABs glue/PET be placed on temperature be 76 DEG C plus
Toasted 60 minutes in thermal station, make epoxide resin AB adhesive curing.
Step 5：The one side that the composite film of Copper Foil/ITO/ epoxide resin ABs glue/PET has Copper Foil is suspended in into concentration is
10%（Percentage by weight）Ferric nitrate etching liquid, soak 4 hours, Copper Foil is removed.
Step 6：Dried after being cleaned by ultrasonic 3 times with deionized water.
The present embodiment product has the crystalline state film of 222 principal crystalline phases through XRD test results, and average visible photopic light transmitance is
91.3%。
Embodiment 2
A kind of method for shifting ito thin film, specific implementation step is as follows：
Step 1：The ito thin film of crystalline state is prepared using magnetically controlled DC sputtering on Copper Foil：It is substrate material with the Copper Foil of 16 μ m-thicks
Material, by vacuum chamber degree to 8.0 × 10-4Pa, regulation substrate heating temperature is 500 DEG C, and target-substrate distance is 10cm, is passed through argon gas
And oxygen, the volume that wherein oxygen accounts for total gas is 20%, and it is 0.5Pa to adjust the total gas pressure of sputtering, starts shielding power supply,
The ito thin film of 400nm thickness is deposited under the sputtering power of 150W.
Step 2：Using spraying technology, in the epoxide resin AB sol solution of the μ m thick of surface even application 5 of ito thin film.
Step 3：The face that epoxide resin AB sol solution will be coated first is alignd with PET film, then simultaneously by rubber roll roll-in
Laminating, forms the composite membrane of Copper Foil/ITO/ epoxide resin ABs glue/PET.
Step 4：By the composite membrane of the Copper Foil after laminating/ITO/ epoxide resin ABs glue/PET be placed on temperature be 80 DEG C plus
Toasted 30 minutes in thermal station, make epoxide resin AB adhesive curing.
Step 5：The one side that the composite film of Copper Foil/ITO/ epoxide resin ABs glue/PET has Copper Foil is suspended in into concentration is
10%（Percentage by weight）Ferric nitrate etching liquid, soak 2 hours, Copper Foil is removed.
Step 6：Dried after being cleaned by ultrasonic 4 times with deionized water.
The present embodiment product has the crystalline state film of 222 principal crystalline phases through XRD test results, and average visible photopic light transmitance is
89.2%。
Embodiment 3
A kind of method for shifting ito thin film, specific implementation step is as follows：
Step 1：The ito thin film of crystalline state is prepared using magnetically controlled DC sputtering on Copper Foil：It is substrate material with the Copper Foil of 22 μ m-thicks
Material, by vacuum chamber degree to 8.0 × 10-4Pa, regulation substrate heating temperature is 450 DEG C, and target-substrate distance is 9cm, is passed through argon gas
And oxygen, the volume that wherein oxygen accounts for total gas is 6%, and it is 1.5Pa to adjust the total gas pressure of sputtering, starts shielding power supply,
The ito thin film of 800nm thickness is deposited under the sputtering power of 150W.
Step 2：Using spraying technology, in the epoxide resin AB sol solution of the μ m thick of surface even application 15 of ito thin film.
Step 3：The face that epoxide resin AB sol solution will be coated first is alignd with PET film, then simultaneously by rubber roll roll-in
Laminating, forms the composite membrane of Copper Foil/ITO/ epoxide resin ABs glue/PET.
Step 4：By the composite membrane of the Copper Foil after laminating/ITO/ epoxide resin ABs glue/PET be placed on temperature be 80 DEG C plus
Toasted 60 minutes in thermal station, make epoxide resin AB adhesive curing.
Step 5：The one side that the composite film of Copper Foil/ITO/ epoxide resin ABs glue/PET has Copper Foil is suspended in into concentration is
10%（Percentage by weight）Ferric nitrate etching liquid, soak 5 hours, Copper Foil is removed.
Step 6：Dried after being cleaned by ultrasonic 3 times with deionized water.
The present embodiment product has the crystalline state film of 222 principal crystalline phases through XRD test results, and average visible photopic light transmitance is
84.6%。
Embodiment 4
A kind of method for shifting ito thin film, specific implementation step is as follows：
Step 1：The certain thickness ito thin film of crystalline state is prepared using rf magnetron sputtering on Copper Foil：With the copper of 30 μ m-thicks
Paper tinsel is backing material, by vacuum chamber degree to 8.0 × 10-4Pa, regulation substrate heating temperature is 350 DEG C, and target-substrate distance is
8cm, is passed through argon gas and oxygen, and the volume that wherein oxygen accounts for total gas is 0.5%, and it is 3.0Pa to adjust the total gas pressure of sputtering, is opened
Dynamic shielding power supply, deposits the ito thin film of 150nm thickness under the sputtering power of 200W.
Step 2：Using spraying technology, in the epoxide resin AB sol solution of the μ m thick of surface even application 20 of ito thin film.
Step 3：The face that epoxide resin AB sol solution will be coated first is alignd with PET film, then simultaneously by rubber roll roll-in
Laminating, forms the composite membrane of Copper Foil/ITO/ epoxide resin ABs glue/PET.
Step 4：By the composite membrane of the Copper Foil after laminating/ITO/ epoxide resin ABs glue/PET be placed on temperature be 75 DEG C plus
Toasted 120 minutes in thermal station, make epoxide resin AB adhesive curing.
Step 5：The one side that the composite film of Copper Foil/ITO/ epoxide resin ABs glue/PET has Copper Foil is suspended in into concentration is
10%（Percentage by weight）Ferric nitrate etching liquid, soak 10 hours, Copper Foil is removed.
Step 6：Dried after being cleaned by ultrasonic 3 times with deionized water.
The present embodiment product has the crystalline state film of 400 principal crystalline phases through XRD test results, and average visible photopic light transmitance is
90.4%。
Embodiment 5
A kind of method for shifting ito thin film, specific implementation step is as follows：
Step 1：The ito thin film of crystalline state is prepared using rf magnetron sputtering on Copper Foil：It is substrate material with the Copper Foil of 22 μ m-thicks
Material, by vacuum chamber degree to 8.0 × 10-4Pa, regulation substrate heating temperature is 420 DEG C, and target-substrate distance is 8cm, is passed through argon gas
And oxygen, the volume that wherein oxygen accounts for total gas is 10%, and it is 2.0Pa to adjust the total gas pressure of sputtering, starts shielding power supply,
The ito thin film of 280nm thickness is deposited under the sputtering power of 180W.
Step 2：Using spraying technology, in the epoxide resin AB sol solution of the μ m thick of surface even application 15 of ito thin film.
Step 3：The face that epoxide resin AB sol solution will be coated first is alignd with PET film, then simultaneously by rubber roll roll-in
Laminating, forms the composite membrane of Copper Foil/ITO/ epoxide resin ABs glue/PET.
Step 4：By the composite membrane of the Copper Foil after laminating/ITO/ epoxide resin ABs glue/PET be placed on temperature be 80 DEG C plus
Toasted 80 minutes in thermal station, make epoxide resin AB adhesive curing.
Step 5：The one side that the composite film of Copper Foil/ITO/ epoxide resin ABs glue/PET has Copper Foil is suspended in into concentration is
10%（Percentage by weight）Ferric nitrate etching liquid, soak 6 hours, Copper Foil is removed.
Step 6：Dried after being cleaned by ultrasonic 3 times with deionized water.
The present embodiment product has the crystalline state film of 222 principal crystalline phases through XRD test results, and average visible photopic light transmitance is
87.7%。
Claims (9)
1. it is a kind of shift ito thin film method, it is characterised in that：Comprise the following steps：
Step 1：Certain thickness crystalline state ito thin film is prepared using magnetron sputtering on Copper Foil；
Step 2：Using spraying technology ito thin film the certain thickness AB glue of surface spraying；
Step 3：Thin with PET fitted by roll-in mode in the face that AB glue will be coated；
Step 4：Film after laminating is placed on certain hour is toasted on the warm table of uniform temperature, make AB adhesive curings；
Step 5：Iron nitrate solution is put into etch Copper Foil；
Step 6：It is cleaned by ultrasonic 3 times~4 times with deionized water, is then dried.
2. it is according to claim 1 it is a kind of shift ito thin film method, it is characterised in that：The thickness of Copper Foil described in step 1
Spend is 16 μm~30 μm.
3. it is according to claim 1 it is a kind of shift ito thin film method, it is characterised in that：Crystalline state described in step 1
Ito thin film refer to XRD test results have 222 or 400 principal crystalline phases crystalline state film.
4. it is according to claim 1 it is a kind of shift ito thin film method, it is characterised in that：Magnetron sputtering described in step 1
Including magnetically controlled DC sputtering and rf magnetron sputtering, the technique of its sputtering is：Back end vacuum is 8.0 × 10-4Pa, sputtering pressure
It is 0.5Pa~3Pa, oxygen volume ratio content is 0.5%~20%, and substrate heating temperature is 350 DEG C~500 DEG C, and target-substrate distance is 8cm
~10cm, sputtering power is 50W~200W.
5. it is according to claim 1 it is a kind of shift ito thin film method, it is characterised in that：Certain thickness described in step 1
Be control ito thin film thickness be 100nm~800nm.
6. it is according to claim 1 it is a kind of shift ito thin film method, it is characterised in that：Certain thickness described in step 2
AB glue is to control its glue thickness for 5 μm~20 μm.
7. it is according to claim 1 it is a kind of shift ito thin film method, it is characterised in that：Uniform temperature described in step 4
It it is 75 DEG C~80 DEG C, the certain hour is 30 minutes~120 minutes.
8. it is according to claim 1 it is a kind of shift ito thin film method, it is characterised in that：Ferric nitrate is molten described in step 5
The weight percent concentration of liquid is 10%, and the time of the etching is 2 hours~10 hours.
9. it is according to claim 6 it is a kind of shift ito thin film method, it is characterised in that：The AB glue is by asphalt mixtures modified by epoxy resin
Fat is the Bi-component high-temperature resistant adhesive of base, is commercially available prod.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611166575.6A CN106676472A (en) | 2016-12-16 | 2016-12-16 | Method for transferring ITO thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611166575.6A CN106676472A (en) | 2016-12-16 | 2016-12-16 | Method for transferring ITO thin film |
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ID=58869607
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| CN201611166575.6A Pending CN106676472A (en) | 2016-12-16 | 2016-12-16 | Method for transferring ITO thin film |
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| US5147519A (en) * | 1990-07-27 | 1992-09-15 | Motorola, Inc. | Method of manufacturing elastomers containing fine line conductors |
| CN101060980A (en) * | 2004-11-19 | 2007-10-24 | 阿克佐诺贝尔股份有限公司 | Method for preparing flexible mechanically compensated transparent layered material |
| CN104261402A (en) * | 2014-10-17 | 2015-01-07 | 中国科学院宁波材料技术与工程研究所 | Graphene transfer method |
| CN104556005A (en) * | 2014-12-31 | 2015-04-29 | 泰州巨纳新能源有限公司 | Method for transferring graphene film |
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2016
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|---|---|---|---|---|
| US5147519A (en) * | 1990-07-27 | 1992-09-15 | Motorola, Inc. | Method of manufacturing elastomers containing fine line conductors |
| CN101060980A (en) * | 2004-11-19 | 2007-10-24 | 阿克佐诺贝尔股份有限公司 | Method for preparing flexible mechanically compensated transparent layered material |
| CN104261402A (en) * | 2014-10-17 | 2015-01-07 | 中国科学院宁波材料技术与工程研究所 | Graphene transfer method |
| CN104556005A (en) * | 2014-12-31 | 2015-04-29 | 泰州巨纳新能源有限公司 | Method for transferring graphene film |
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| Title |
|---|
| （美）达尔蒂著: "《珐琅艺术 工艺技术•作品展示•灵感启发》", 30 November 2015, 上海科学技术出版社 * |
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| 李鸿波等编著: "《彩色涂层钢板生产工艺与装备技术》", 31 January 2006, 冶金工业出版社 * |
| 白振中主编: "《建筑玻璃加工技术 安全玻璃加工技术》", 31 March 2010 * |
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