CN106656077A - Wide-band radio frequency power amplifier with standby mode, chip and communication terminal - Google Patents
Wide-band radio frequency power amplifier with standby mode, chip and communication terminal Download PDFInfo
- Publication number
- CN106656077A CN106656077A CN201611269012.XA CN201611269012A CN106656077A CN 106656077 A CN106656077 A CN 106656077A CN 201611269012 A CN201611269012 A CN 201611269012A CN 106656077 A CN106656077 A CN 106656077A
- Authority
- CN
- China
- Prior art keywords
- frequency power
- power amplifier
- wide
- radio frequency
- band radio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a wide-band radio frequency power amplifier with a standby mode, a chip and a communication terminal. The wide-band radio frequency power amplifier comprises a depletion type transistor, an enhancement transistor and a switch; the depletion type transistor is connected according to a common source mode, a grid is used as input end of the wide-band radio frequency power amplifier, and a drain is used as the source of the enhancement transistor; the enhancement transistor is connected according to a common grid mode, and the drain is used as an output end of the wide-band radio frequency power amplifier; and one end of the switch is connected with the grid of the enhancement transistor, and the other end is grounded. According to the wide-band radio frequency power amplifier provided by the invention, by means of the novel and smart common source and common grid structure, the equivalent capacitance of the input end caused by the Miller effect is effectively reduced, thereby effectively improving the pole frequency and the bandwidth of the wide-band radio frequency power amplifier. Due to the implementation of the standby mode, the power consumption level of the wide-band radio frequency power amplifier is greatly reduced.
Description
Technical field
The present invention relates to a kind of radio-frequency power amplifier, more particularly to a kind of broadband radio-frequency power with standby mode is put
Big device, also relates to include the chip of the wide-band radio frequency power amplifier and communication terminal, belongs to RF IC technology
Field.
Background technology
Wide-band radio frequency power amplifier refers to the radio-frequency power amplifier that need not be tuned in very wide frequency range.It
, used as the interstage network of amplifier and output network, its operating efficiency is than tuning for the general broadband elements such as transmission line, transformer
Formula radio frequency amplifier is low, but in the case where rapid change frequency is communicated, is easy to improve reliability, simplifies and safeguards and real
Existing adjust automatically.
In existing wide-band radio frequency power amplifier, the single transistor amplifier for generally being connected using common source form.It
Bandwidth be generally limited by the equivalent capacity and resistance of input, wherein input capacitance has and greatly puts from single-transistor
, to the parasitic capacitance (CGD) between output end (drain electrode), due to the presence of the Miller effect, this is a part of for the input (grid) of big device
Parasitic capacitance limits the bandwidth of this amplifier in the equivalent capacity of input.
On the other hand, in the radio-frequency power amplifier of high power operation, it usually needs very big quiescent current, for example
100mA, for the radio circuit that 5V powers, this radio-frequency power amplifier power consumption of itself is up to 500mW, this right and wrong
The power consumption of Chang Keguan.And under many circumstances, we are not to have always a demand for radio-frequency power amplifier to put input signal
Greatly, then in the case where not needing radio-frequency power amplifier to work, the quiescent current of radio-frequency power amplifier itself is resulted in
Serious power wastage.
The content of the invention
Primary technical problem to be solved by this invention is to provide a kind of broadband radio-frequency power with standby mode to put
Big device.
Another technical problem to be solved by this invention is to provide a kind of core including the wide-band radio frequency power amplifier
Piece and communication terminal.
In order to realize foregoing invention purpose, the present invention adopts following technical proposals：
A kind of first aspect according to embodiments of the present invention, there is provided wide-band radio frequency power amplifier with standby mode,
Including depletion mode transistor, enhancement transistor and switch；
The depletion mode transistor connects according to common source mode, input of the grid as the wide-band radio frequency power amplifier
End, the source electrode of the drain electrode connection enhancement transistor；
The enhancement transistor connects according to common grid mode, the output drained as the wide-band radio frequency power amplifier
End；
One end of the switch connects the grid of the enhancement transistor, other end ground connection.
Wherein more preferably, the wide-band radio frequency power amplifier also includes the first biasing circuit；First biasing circuit
Connect the grid of the depletion mode transistor.
Wherein more preferably, the wide-band radio frequency power amplifier also includes the second biasing circuit；Second biasing circuit
Connect the source electrode of the depletion mode transistor.
Wherein more preferably, the wide-band radio frequency power amplifier also includes the 3rd biasing circuit；3rd biasing circuit
Connect the grid of the enhancement transistor.
Wherein more preferably, first biasing circuit, second biasing circuit or the 3rd biased electrical routing resistance,
Inductively or capacitively combination is realized.
Wherein more preferably, the 3rd biasing circuit includes two resistance and an electric capacity；
Described two resistant series are connected to electric resistance partial pressure described between the drain electrode of the enhancement transistor and ground
The grid of enhancement transistor；
The capacitance connection is between the grid and ground of the enhancement transistor.
Wherein more preferably, when described switching off, the depletion mode transistor and the enhancement transistor are to input
Signal is amplified, and the wide-band radio frequency power amplifier is in amplification mode；
When the switch is closed, the grounded-grid of the enhancement transistor, turns off in the case of no-voltage, makes institute
State wide-band radio frequency power amplifier and enter holding state；
When the switch returns to off-state, the wide-band radio frequency power amplifier turns again to amplification mode.
Wherein more preferably, the switch is made up of the second enhancement transistor；The drain electrode of second enhancement transistor
Connect the grid of the enhancement transistor, source ground, grid connection control signal.
A kind of second aspect according to embodiments of the present invention, there is provided IC chip, which includes above-mentioned broadband
Radio-frequency power amplifier.
A kind of third aspect according to embodiments of the present invention, there is provided communication terminal, which includes above-mentioned wide band radio-frequency
Power amplifier.
Compared with prior art, wide-band radio frequency power amplifier provided by the present invention is total to by novel cleverly common source
Grid structure, effectively reduces the equivalent capacity of the input caused due to the Miller effect, so as to effectively lifting pole frequency and penetrating
The bandwidth of frequency power amplifier.The realization of standby mode significantly reduces the power consumption levels of wide-band radio frequency power amplifier itself.
Description of the drawings
Fig. 1 is the circuit theory diagrams of wide-band radio frequency power amplifier provided by the present invention；
Fig. 2 is the embodiment schematic diagram of switch sections in this wide-band radio frequency power amplifier；
Fig. 3 is the embodiment schematic diagram of biasing circuit in this wide-band radio frequency power amplifier.
Specific embodiment
Below in conjunction with the accompanying drawings the technology contents of the present invention are described in further detail with specific embodiment.
The basic fundamental thought of the present invention is in radio-frequency power amplifier, using depletion type common source transistors and enhancing
Altogether gate type transistor constitutes cascode structure to type, in the grid insertion switch of common gate type transistor, so as to effective control broadband
Radio-frequency power amplifier is operated in amplification mode or standby mode.As such, it is possible to allow wide-band radio frequency power amplifier being not required to
Minimum quiescent current is consumed in the case of working, so as to reach energy-saving purpose.
Fig. 1 shows one embodiment of the wide-band radio frequency power amplifier with standby mode provided by the present invention.
In this embodiment, wide-band radio frequency power amplifier is mainly realized by two transistors and a switch.One of transistor
M1 is depletion mode transistor, and another is enhancement transistor M2.Depletion mode transistor M1 connects according to common source mode, and grid is made
Input (RFin) for whole wide-band radio frequency power amplifier is while also connect the first biasing circuit B1G, source electrode connects second
Biasing circuit B1S, the source electrode of the link enhancement transistor npn npn M2 that drains.Enhancement transistor M2 connects according to common grid mode, grid
Connect the 3rd biasing circuit B2G, the output end (RFout) drained as whole wide-band radio frequency power amplifier.
In the present invention, two transistors for being connected using cascode structure can reduce what is caused due to the Miller effect
The equivalent capacity of input, so as to effectively lift the bandwidth of pole frequency and radio-frequency power amplifier.Put in broadband radio-frequency power
In big device, the grid of one end link enhancement transistor npn npn M2, other end ground connection are switched.So in the case where switching off, increase
The grid of strong type transistor M2 is biased in high voltage by the 3rd biasing circuit B2G.The depletion mode transistor that common source mode connects
M1 and the enhancement transistor M2 that altogether grid mode connects are amplified to input signal, and wide-band radio frequency power amplifier is in amplification
Pattern；When the switch is closed, the grounded-grid of enhancement transistor M2, enhancement transistor M2 is turned off in the case of no-voltage,
The electric current for flowing through the transistor levels off to 0, and wide-band radio frequency power amplifier enters holding state；When switch returns to off-state,
Wide-band radio frequency power amplifier turns again to amplification mode.Therefore, by the working condition of switch control rule enhancement transistor just
The Opportunity awaiting control for linear to wide-band radio frequency power amplifier can be realized.
As shown in Fig. 2 in another embodiment of wide-band radio frequency power amplifier provided by the present invention, switch can be with
Realize that either inverter structure is realized or other can complete the circuit realiration of switching manipulation by transistor.Wherein, most
Simple switch implementation is to use an enhancement transistor M3, its one end of drain electrode to inductive switch, is connected to this broadband
The grid of the enhancement transistor M2 that the common grid mode of radio-frequency power amplifier connects；The source electrode correspondence of enhancement transistor M3 is opened
The other end of pass, connection ground；Grid connection control signal VSW of enhancement transistor M3, for the disconnected open and close of controlling switch
Conjunction state.When control signal VSW exceedes the threshold value of enhancement transistor M3, the transistor turns, equivalent to switch closure, make
Whole wide-band radio frequency power amplifier enters standby mode；When control signal VSW is less than the threshold value of enhancement transistor M3, should
Transistor is turned off, and equivalent to switching off, makes whole wide-band radio frequency power amplifier reenter amplification mode.
Front to address, the depletion mode transistor M1 and enhancement transistor M2 in this wide-band radio frequency power amplifier is required to
Ensure that radio-frequency power amplifier provides effective gain and bandwidth characteristic using some biasing circuits.Another shown in Fig. 3
In individual embodiment, above-mentioned first biasing circuit B1G, the second biasing circuit B1S and the 3rd biasing circuit B2G can be by resistance, electricity
Perhaps inductor combination is realized.It is described as follows：The gate bias circuit B1G of the depletion mode transistor M1 of common source connection uses one
Individual resistance R1G is connected to ground, can constitute input biasing with the circuit partial pressure of outside input RFin；What common source connected exhausts
Source bias circuits B1S of transistor npn npn M1 are connected to ground using a resistance R1S, amplify according to this broadband radio-frequency power is flow through
The electric current of the cascode structure of device constitutes voltage bias in source；The grid of the enhancement transistor M2 of common gate connection uses two
Individual resistance R2G1 and R2G2 is connected between output end RFout of this wide-band radio frequency power amplifier and ground, and electric resistance partial pressure is connected
The grid of enhancement transistor M2 is connected to, and increases a direct-to-ground capacitance C2G to maintain the voltage stabilization of the node in grid.
The switch is made up of enhancement transistor M3, the grid of the enhancement transistor M2 of the drain electrode connection common gate connection of wherein M3, source
Pole is grounded, grid connection control signal VSW.Output end RFout makes this wide-band radio frequency power amplifier reality by outside offer one
The existing current offset of preferable gain and bandwidth.
Compared with prior art, wide-band radio frequency power amplifier provided by the present invention is total to by novel cleverly common source
Grid structure, effectively reduces the equivalent capacity of the input caused due to the Miller effect, so as to effectively lifting pole frequency and penetrating
The bandwidth of frequency power amplifier.Through it is experimentally confirmed that the wide-band radio frequency power amplifier made using the cascode structure is existed
Gain under different frequency is basically stable at 16dB or so, and metastable gain can be provided in 50MHz to 2.55GHz,
In the case where control signal VSW is 0, the wide-band radio frequency power amplifier can enter holding state, consume electric current about 4mA,
And when control signal VSW is 2.5V, the wide-band radio frequency power amplifier may be at magnifying state, consume electric current and be about
100mA.The realization of this standby mode significantly reduces the power consumption levels of wide-band radio frequency power amplifier itself.
Wide-band radio frequency power amplifier shown in above-described embodiment can be used in chip, and (for example radio-frequency power amplifies
Device chip) in.For the concrete structure of the wide-band radio frequency power amplifier in the radio-frequency power amplifier chip, here is just no longer
Detail one by one.
In addition, above-mentioned wide-band radio frequency power amplifier can be used in communication terminal, as the important of radio circuit
Part.Communication terminal mentioned here refer to can used in mobile environment, support GSM, EDGE, TD_SCDMA,
The computer equipment of various communication standards such as TDD_LTE, FDD_LTE, including mobile phone, notebook computer, panel computer, car
Carry computer etc..Additionally, technical scheme provided by the present invention is also applied for the occasion of other radio circuit applications, for example communicate base
Stand.
The wide-band radio frequency power amplifier with standby mode provided by the present invention, chip and communication terminal are entered above
Detailed description is gone.For one of ordinary skill in the art, to it on the premise of without departing substantially from true spirit
Any obvious change done, all will be constituted to infringement of patent right of the present invention, will undertake corresponding legal liabilities.
Claims (10)
1. a kind of wide-band radio frequency power amplifier with standby mode, it is characterised in that including depletion mode transistor, enhancement mode
Transistor and switch；
The depletion mode transistor connects according to common source mode, grid as the wide-band radio frequency power amplifier input,
The source electrode of the drain electrode connection enhancement transistor；
The enhancement transistor connects according to common grid mode, the output end drained as the wide-band radio frequency power amplifier；
One end of the switch connects the grid of the enhancement transistor, other end ground connection.
2. wide-band radio frequency power amplifier as claimed in claim 1, it is characterised in that also including the first biasing circuit；
First biasing circuit connects the grid of the depletion mode transistor.
3. wide-band radio frequency power amplifier as claimed in claim 1, it is characterised in that also including the second biasing circuit；
Second biasing circuit connects the source electrode of the depletion mode transistor.
4. wide-band radio frequency power amplifier as claimed in claim 1, it is characterised in that also including the 3rd biasing circuit；
3rd biasing circuit connects the grid of the enhancement transistor.
5. the wide-band radio frequency power amplifier as described in any one in claim 2～4, it is characterised in that：
First biasing circuit, second biasing circuit or the 3rd biased electrical routing resistance, inductively or capacitively combine
Realize.
6. wide-band radio frequency power amplifier as claimed in claim 5, it is characterised in that：
3rd biasing circuit includes two resistance and an electric capacity；
Electric resistance partial pressure is connected to the enhancing by described two resistant series between the drain electrode of the enhancement transistor and ground
The grid of transistor npn npn；
The capacitance connection is between the grid and ground of the enhancement transistor.
7. the wide-band radio frequency power amplifier as described in any one in Claims 1 to 4, it is characterised in that：
When described switching off, the depletion mode transistor and the enhancement transistor are amplified to input signal, institute
Wide-band radio frequency power amplifier is stated in amplification mode；
When the switch is closed, the grounded-grid of the enhancement transistor, turns off in the case of no-voltage, makes the width
Band radio-frequency power amplifier enters holding state；
When the switch returns to off-state, the wide-band radio frequency power amplifier turns again to amplification mode.
8. wide-band radio frequency power amplifier as claimed in claim 7, it is characterised in that：
The switch is made up of the second enhancement transistor；It is brilliant that the drain electrode of second enhancement transistor connects the enhancement mode
The grid of body pipe, source ground, grid connection control signal.
9. a kind of IC chip, it is characterised in that include in the IC chip any one in claim 1～8
Wide-band radio frequency power amplifier described in.
10. a kind of communication terminal, it is characterised in that include in the communication terminal in claim 1～8 described in any one
Wide-band radio frequency power amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611269012.XA CN106656077A (en) | 2016-12-31 | 2016-12-31 | Wide-band radio frequency power amplifier with standby mode, chip and communication terminal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611269012.XA CN106656077A (en) | 2016-12-31 | 2016-12-31 | Wide-band radio frequency power amplifier with standby mode, chip and communication terminal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106656077A true CN106656077A (en) | 2017-05-10 |
Family
ID=58838542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611269012.XA Withdrawn CN106656077A (en) | 2016-12-31 | 2016-12-31 | Wide-band radio frequency power amplifier with standby mode, chip and communication terminal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106656077A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101894841A (en) * | 2006-03-27 | 2010-11-24 | 精工电子有限公司 | Cascode circuit and semiconductor device |
| CN202004739U (en) * | 2011-04-12 | 2011-10-05 | 盛况 | Full-automatic solid state circuit breaker |
| CN104716905A (en) * | 2015-04-01 | 2015-06-17 | 宜确半导体（苏州）有限公司 | Cascade radio-frequency power amplifier capable of improving efficiency |
| US9444416B1 (en) * | 2013-06-18 | 2016-09-13 | Macom Technology Solutions Holdings, Inc. | Broadband amplifier topology with current shutdown |
-
2016
- 2016-12-31 CN CN201611269012.XA patent/CN106656077A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101894841A (en) * | 2006-03-27 | 2010-11-24 | 精工电子有限公司 | Cascode circuit and semiconductor device |
| CN202004739U (en) * | 2011-04-12 | 2011-10-05 | 盛况 | Full-automatic solid state circuit breaker |
| US9444416B1 (en) * | 2013-06-18 | 2016-09-13 | Macom Technology Solutions Holdings, Inc. | Broadband amplifier topology with current shutdown |
| CN104716905A (en) * | 2015-04-01 | 2015-06-17 | 宜确半导体（苏州）有限公司 | Cascade radio-frequency power amplifier capable of improving efficiency |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2016155614A1 (en) | Cascode radio frequency power amplifier having improved efficiency | |
| US7560994B1 (en) | Systems and methods for cascode switching power amplifiers | |
| CN103117711B (en) | Monolithic integrated radio frequency high-gain low-noise amplifier | |
| CN108574464B (en) | Low-power-consumption high-linearity dual-mode millimeter wave broadband stacked low-noise amplifier | |
| US10523161B2 (en) | Power amplification module | |
| US9148091B2 (en) | Amplifier and wireless communication device | |
| CN102969984A (en) | Low noise amplifier for current reuse and noise cancellation | |
| CN106664062A (en) | Integrated 3-way doherty amplifier | |
| CN204442292U (en) | The cascade radio-frequency power amplifier that a kind of efficiency improves | |
| US8269561B1 (en) | Systems and methods for CMOS power amplifiers with power mode control | |
| TWI389448B (en) | Low noise amplifier with adaptive frequency responses and method of switching frequency responses thereof | |
| CN106656077A (en) | Wide-band radio frequency power amplifier with standby mode, chip and communication terminal | |
| Oh et al. | A fully-integrated+ 23-dBm CMOS triple cascode linear power amplifier with inner-parallel power control scheme | |
| CN109327194A (en) | A kind of one chip low-noise amplifier of the broadband High Linear with bypass functionality | |
| CN104104340A (en) | Radio-frequency power amplifier | |
| CN208353301U (en) | A kind of high efficiency F class stacking power amplifier based on left-and-right-hand transmission line | |
| CN102780457A (en) | Low noise amplifier | |
| Hwang et al. | High gain and high PAE power amplifier by employing adaptive bias control circuit for resonant WPT | |
| Ren et al. | A high power CMOS cascode power amplifier with adaptive dynamic bias control for linearity enhancement | |
| Grebennikov | Effective circuit design techniques to increase MOSFET power amplifier efficiency | |
| CN108683411A (en) | A kind of continuous F power-like amplifiers of high efficiency based on transistor stack technology | |
| CN103312273B (en) | A kind of circuit arrangement of LDMOS power amplifier temperature effect suppression | |
| CN210745020U (en) | Envelope tracking power supply and electronic device | |
| Liu et al. | A 2.4 GHz CMOS Doherty power amplifier | |
| CN218633923U (en) | Passive circuit under radio frequency receiving module bypass mode and radio frequency receiving module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20170510 |
|
| WW01 | Invention patent application withdrawn after publication |