CN106653976B - A kind of encapsulating structure and its electrical leakage detecting method of LED lamp bead - Google Patents
A kind of encapsulating structure and its electrical leakage detecting method of LED lamp bead Download PDFInfo
- Publication number
- CN106653976B CN106653976B CN201611238000.0A CN201611238000A CN106653976B CN 106653976 B CN106653976 B CN 106653976B CN 201611238000 A CN201611238000 A CN 201611238000A CN 106653976 B CN106653976 B CN 106653976B
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- lamp bead
- led lamp
- vcc
- led
- luminescence
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- 239000011324 bead Substances 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000004020 luminiscence type Methods 0.000 claims abstract description 66
- 238000012360 testing method Methods 0.000 claims abstract description 39
- 238000001514 detection method Methods 0.000 claims abstract description 16
- 230000002950 deficient Effects 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 12
- 238000010586 diagram Methods 0.000 description 8
- 238000007689 inspection Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of encapsulating structure of LED lamp bead and its electrical leakage detecting methods, the encapsulating structure of the LED lamp bead includes lens packages body and the holder that is encapsulated in the lens packages body, it is provided with luminescence chip and driving chip on the holder, the VCC pin extended outside lens packages body is additionally provided on the holder, GND pin, with VCC test pins, the VCC pin is connect with the ends VCC of the driving chip, the VCC test pins are connect with the anode of the luminescence chip, the cathode of the luminescence chip connects the drain electrode of the NMOS tube in the driving chip, the source electrode of the NMOS tube connects GND pin.The encapsulating structure of LED lamp bead provided by the invention increases the ends VCC that a VCC pin is directly connected to driving chip, when in detection of electrical leakage, VCC pin is hanging, detection of electrical leakage is carried out using the VCC test pins and GND pin of LED lamp bead, it solves the problems, such as to burn out driving chip because VCC terminates negative voltage, has also ensured the quality of LED lamp bead product.
Description
Technical field
The present invention relates to LED technology field, more particularly to the encapsulating structure and its electrical leakage detecting method of a kind of LED lamp bead.
Background technology
Currently, finished product LED (Light Emitting Diode, light emitting diode) lamp bead can be generated due to many reasons
Leaky, and the service life that the LED lamp bead of leaky occurs can greatly shorten, so leaking electricity to LED lamp bead before manufacture
Detection becomes an extremely important step of LED lamp bead product quality guarantee.
Traditional monochromatic LED lamp bead product detection of electrical leakage is tested with special electrical test equipment, for single colored chip
Electrical testing instrument is adjusted to backward voltage by the LED lamp bead of encapsulation, is added backward voltage in LED lamp bead positive and negative anodes pin, is read reversed
The reverse current upper limit of current data, general LED is defined as 1 μ A, if the reverse current read is more than 1 μ A, is judged to leaking electricity
Defective products.But the encapsulating structure that existing driving chip is packaged together with LED lamp bead on the market at present is as shown in Figure 1, driving
The ends VCC (Volt CurrentCondenser, supply voltage) of chip are connect with the ends VCC (i.e. positive) of LED lamp bead, this
Encapsulating structure can not carry out detection of electrical leakage, the reason is that, it is reversed when being added between VCC and GND (Ground, electric wire ground terminal)
When voltage, driving chip can be caused to be burnt because VCC terminates negative voltage.
Therefore for there are the LED lamp bead product of driving chip, how to carry out the encapsulation of LED lamp bead and carry out electric leakage inspection
It surveys, the problem of to ensure the quality of LED lamp bead product, be our urgent need to resolve.
Invention content
The present invention provides a kind of encapsulating structure of LED lamp bead and its electrical leakage detecting method, the encapsulating structures of the LED lamp bead
The ends VCC that a VCC pin is directly connected to driving chip are increased, it is in detection of electrical leakage, VCC pin is hanging, use LED
The VCC test pins of lamp bead carry out detection of electrical leakage with GND pin, solve and burn out driving chip because VCC terminates negative voltage
Problem has also ensured the quality of LED lamp bead product.
For this purpose, the present invention uses following technical scheme：
On the one hand, a kind of encapsulating structure of LED lamp bead is provided, the encapsulating structure of the LED lamp bead includes lens packages body
And it is encapsulated in the holder in the lens packages body, luminescence chip and driving chip, the luminous core are provided on the holder
Piece is electrically connected with the driving chip, and VCC pin, the GND extended outside lens packages body is additionally provided on the holder
Pin and VCC test pins, the VCC pin are connect with the ends VCC of the driving chip, the VCC test pins and institute
The anode connection of luminescence chip is stated, the cathode of the luminescence chip connects the drain electrode of the NMOS tube in the driving chip, described
The source electrode of NMOS tube connects GND pin.
Wherein, the grid of the NMOS tube connects the signal control terminal of the driving chip.
Wherein, the luminescence chip includes LED R luminescence chips, LED G luminescence chips and LED B luminescence chips, described
The anode of LED R luminescence chips, the LED G luminescence chips and the LED B luminescence chips is all connected with VCC test pins.
Wherein, the driving chip respectively with the LED R luminescence chips, the LED G luminescence chips and the LED B
Luminescence chip is electrically connected, and is shone with controlling the LED R luminescence chips, the LEDG luminescence chips and the LED B respectively
The gray scale of chip.
On the other hand, a kind of electrical leakage detecting method of the encapsulating structure based on above-mentioned LED lamp bead, electric leakage inspection are additionally provided
Survey method, including：
VCC pin is hanging, and VCC test pins connect -5V voltages, and GND pin connects 0V voltages；
The electric current Jing Guo the LED lamp bead is detected, the reverse current leakage of the LED lamp bead is obtained；
Judge that the LED lamp bead is according to the comparison result of the reverse current leakage and default reverse current leakage threshold value
No electric leakage.
Wherein, described according to described in the reverse current leakage and the judgement of the comparison result of default reverse current leakage threshold value
LED lamp bead whether leak electricity including：
Judge whether the reverse current leakage is more than or equal to default reverse current leakage threshold value, if so, the LED light
Pearl is leaked electricity, and the LED lamp bead is defective products；If it is not, then the LED lamp bead leakproof, the LED lamp bead are non-defective unit.
Wherein, the default reverse current leakage threshold value is 1 μ A.
Wherein, described to judge whether the reverse current leakage is more than or equal to default reverse current leakage threshold value, if it is not, then
The LED lamp bead leakproof, the LED lamp bead be non-defective unit after, further include：
By the VCC pin and the VCC test pin short circuits.
Compared with prior art, beneficial effects of the present invention are：The encapsulating structure of LED lamp bead provided by the invention includes：
Lens packages body and the holder being encapsulated in the lens packages body are provided with luminescence chip and driving chip on the holder,
The luminescence chip is electrically connected with the driving chip, is additionally provided with and is extended outside lens packages body on the holder
VCC pin, GND pin and VCC test pins, the VCC pin are connect with the ends VCC of the driving chip, the VCC
Test pins are connect with the anode of the luminescence chip, and the cathode of the luminescence chip connects the NMOS tube in the driving chip
Drain electrode, the source electrode of the NMOS tube connects GND pin.The encapsulating structure of LED lamp bead provided by the invention increases a VCC
Pin is directly connected to the ends VCC of driving chip, in detection of electrical leakage, VCC pin is hanging, uses the VCC of LED lamp bead
Test pins carry out detection of electrical leakage with GND pin；If it is detected that after being non-defective unit, by VCC pin and VCC test pin short circuits, i.e.,
Can normal use, solve the problems, such as because VCC terminate negative voltage due to burn out driving chip, also ensured the product of LED lamp bead product
Matter.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, institute in being described below to the embodiment of the present invention
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the present invention
Example without creative efforts, can also be implemented for those of ordinary skill in the art according to the present invention
The content of example and these attached drawings obtain other attached drawings.
Fig. 1 is the structural schematic diagram for the encapsulating structure that driving chip of the existing technology is packaged together with LED lamp bead.
Fig. 2 is that a kind of structural schematic diagram one of the encapsulating structure of LED lamp bead is provided in the specific embodiment of the invention.
Fig. 3 is that a kind of structural schematic diagram two of the encapsulating structure of LED lamp bead is provided in the specific embodiment of the invention.
Fig. 4 be a kind of luminescence chip for being provided in the specific embodiment of the invention from positive VCC test pins through overdriving
NMOS tube in chip is connected to the schematic diagram of the electric-leakage detection circuit of cathode GND pin.
Fig. 5 is a kind of method flow diagram of the electrical leakage detecting method of the LED lamp bead provided in the specific embodiment of the invention.
Specific implementation mode
For make present invention solves the technical problem that, the technical solution that uses and the technique effect that reaches it is clearer, below
The technical solution of the embodiment of the present invention will be described in further detail in conjunction with attached drawing, it is clear that described embodiment is only
It is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those skilled in the art exist
The every other embodiment obtained under the premise of creative work is not made, shall fall within the protection scope of the present invention.
Please refer to Fig.2 and Fig. 3, Fig. 2 be a kind of LED lamp bead provided in the specific embodiment of the invention encapsulating structure
Structural schematic diagram one, the figure are the vertical view of encapsulating structure；Fig. 3 is a kind of LED light provided in the specific embodiment of the invention
The structural schematic diagram two of the encapsulating structure of pearl, as shown, the encapsulating structure of the LED lamp bead includes lens packages body and is encapsulated in
Holder in the lens packages body, is provided with luminescence chip and driving chip on the holder, the luminescence chip with it is described
Driving chip is electrically connected, be additionally provided on the holder extend VCC pin outside lens packages body, GND pin and
VCC test pins, the VCC pin are connect with the ends VCC of the driving chip, and the VCC test pins shine with described
The anode connection of chip, the cathode of the luminescence chip connect the drain electrode of the NMOS tube in the driving chip, the NMOS tube
Source electrode connect GND pin.The holder needs to may also include other pins according to product, be also merely not only VCC pin,
GND pin and VCC test pins, the VCC pin are not connected to the VCC test pins.
It should be noted that the anode connection VCC test pins of luminescence chip, i.e. the ends VCC of luminescence chip connect VCC
Test pins.The embodiment of the present invention increases the ends VCC that a VCC pin is directly connected to driving chip, the ends VCC of driving chip
It is not connected to the ends VCC of luminescence chip, it is in detection of electrical leakage, VCC pin is hanging, drawn using the VCC test of LED lamp bead
Foot carries out detection of electrical leakage with GND pin, solves the problems, such as VCC termination negative electricity and burns out driving chip, has also ensured LED lamp bead
The quality of product.
Further, as shown in figure 4, a kind of luminescence chip provided in its specific embodiment of the invention is from positive VCC
The NMOS tube that test pins pass through in driving chip is connected to the schematic diagram of the electric-leakage detection circuit of cathode GND pin, as schemed institute
Show, the driving chip includes that a NOMS is managed, and the cathode of the luminescence chip connects the drain electrode of the NMOS tube (poles D), institute
State source electrode (poles S) the connection GND pin of NMOS tube.The grid (poles G) of the NMOS tube connects the signal control of the driving chip
End processed.The NMOS tube that the luminescence chip passes through in the driving chip connects GND pin, when the ends VCC test of LED lamp bead
When connecing backward voltage, the parasitic diode that NMOS tube generates makes NMOS reverse-conductings, if LED lamp bead has electric leakage, electric leakage inspection at this time
Slowdown monitoring circuit just will produce reverse current leakage, if reverse current leakage is excessive, illustrates that the LED lamp bead is defective products, needs
It screens out.
Further, the luminescence chip includes LED R luminescence chips, LED G luminescence chips and LED B luminescence chips,
The anode of the LED R luminescence chips, the LED G luminescence chips and the LED B luminescence chips is all connected with VCC test and draws
Foot, i.e. LED lamp bead are multi-colored led lamp bead, and R, G, B corresponding are red, green, blue, LED R luminescence chips, LED G hairs
The anode (i.e. the ends VCC) of optical chip and the LED B luminescence chips is all connected with VCC test pins, makes wiring simpler in this way
It is single, it is also convenient for providing voltage to each luminescence chip.
Further, the driving chip respectively with the LED R luminescence chips, LED G luminescence chips and described
LED B luminescence chips are electrically connected, to control the LED R luminescence chips, the LED G luminescence chips and the LED respectively
The gray scale of B luminescence chips, and then control LED lamp bead and show different colors.
A kind of detection of electrical leakage side of the encapsulating structure based on above-mentioned LED lamp bead is additionally provided in the specific embodiment of the invention
Method, as shown in figure 5, it is a kind of method stream of the electrical leakage detecting method of the LED lamp bead provided in the specific embodiment of the invention
Cheng Tu, as shown, the electrical leakage detecting method, including：
Step S101：VCC pin is hanging, and VCC test pins connect -5V voltages, and GND pin connects 0V voltages.VCC is drawn
Foot is hanging, is in order to avoid the VCC of driving chip terminates negative voltage and burns chip；VCC test pins meet -5V voltages, GND
Pin connects 0V voltages, even if luminescence chip connects backward voltage, when the VCC test of LED lamp bead terminate backward voltage, and NMOS tube
The parasitic diode of generation makes NMOS reverse-conductings, if LED lamp bead has electric leakage at this time, just will produce reverse current leakage, such as Fig. 3
It is shown.
Step S102：The electric current Jing Guo the LED lamp bead is detected, the reverse current leakage of the LED lamp bead is obtained.Make
After LED lamp bead connects backward voltage, the electric current Jing Guo the LED lamp bead, the reverse leakage electricity of the electric current, that is, LED lamp bead are detected
Stream.
Step S103：According to the reverse current leakage and the judgement of the comparison result of default reverse current leakage threshold value
Whether LED lamp bead leaks electricity.
Specifically, the comparison result according to the reverse current leakage and default reverse current leakage threshold value judges institute
State LED lamp bead whether leak electricity including：
Judge whether the reverse current leakage is more than or equal to default reverse current leakage threshold value, if so, the LED light
Pearl is leaked electricity, and the LED lamp bead is defective products；If it is not, then the LED lamp bead leakproof, the LED lamp bead are non-defective unit.
As a preferred embodiment, the default reverse current leakage threshold value is 1 μ A, and user can also be according to product
It is required that selecting other default reverse current leakage threshold values, do not limit here.
Further, described to judge whether the reverse current leakage is more than or equal to default reverse current leakage threshold value, if
No, then the LED lamp bead leakproof further includes after the LED lamp bead is non-defective unit：By the VCC pin and the VCC
Test pin short circuits.If LED lamp bead is non-defective unit, by VCC pin and VCC test pin short circuits, you can normal use, it is convenient
Voltage is provided to LED lamp bead and driving chip.
The encapsulating structure of LED lamp bead provided by the invention increases the VCC that a VCC pin is directly connected to driving chip
End, it is in detection of electrical leakage, VCC pin is hanging, carry out electric leakage inspection using the VCC test pins and GND pin of LED lamp bead
It surveys；If it is detected that after being non-defective unit, by VCC pin and VCC test pin short circuits, you can normal use is solved because VCC is terminated
Negative voltage and the problem of burn out driving chip, also ensured the quality of LED lamp bead product.
The technical principle of the present invention is described above in association with specific embodiment.These descriptions are intended merely to explain the present invention's
Principle, and it cannot be construed to limiting the scope of the invention in any way, it is also only of the invention shown in attached drawing
One of embodiment, actual structure is not limited to this.Based on the explanation herein, those skilled in the art need not pay
Performing creative labour can associate other specific implementation modes of the present invention, these modes fall within the protection model of the present invention
Within enclosing.
Claims (8)
1. a kind of encapsulating structure of LED lamp bead, including lens packages body and the holder that is encapsulated in the lens packages body, it is described
Luminescence chip and driving chip are provided on holder, the luminescence chip is electrically connected with the driving chip, which is characterized in that
VCC pin, GND pin and the VCC test pins extended outside lens packages body is additionally provided on the holder, it is described
VCC pin is connect with the ends VCC of the driving chip, and the VCC test pins are connect with the anode of the luminescence chip, institute
The cathode for stating luminescence chip connects the drain electrode of the NMOS tube in the driving chip, and the source electrode of the NMOS tube connects GND pin.
2. a kind of encapsulating structure of LED lamp bead as described in claim 1, which is characterized in that the grid of the NMOS tube connects
The signal control terminal of the driving chip.
3. a kind of encapsulating structure of LED lamp bead as described in claim 1, which is characterized in that the luminescence chip includes LED R
Luminescence chip, LED G luminescence chips and LED B luminescence chips, the LED R luminescence chips, the LED G luminescence chips and institute
The anode for stating LED B luminescence chips is all connected with VCC test pins.
4. a kind of encapsulating structure of LED lamp bead as claimed in claim 3, which is characterized in that the driving chip respectively with institute
LED R luminescence chips, the LED G luminescence chips and the LED B luminescence chips is stated to be electrically connected, it is described to control respectively
The gray scale of LED R luminescence chips, the LED G luminescence chips and the LED B luminescence chips.
5. a kind of detection of electrical leakage of the LED lamp bead of the encapsulating structure based on the LED lamp bead described in Claims 1-4 any one
Method, which is characterized in that including：
VCC pin is hanging, and VCC test pins connect -5V voltages, and GND pin connects 0V voltages；
The electric current Jing Guo the LED lamp bead is detected, the reverse current leakage of the LED lamp bead is obtained；
Judge whether the LED lamp bead leaks according to the reverse current leakage and the comparison result of default reverse current leakage threshold value
Electricity.
6. electrical leakage detecting method as claimed in claim 5, which is characterized in that described according to the reverse current leakage and default
The comparison result of reverse current leakage threshold value judge the LED lamp bead whether leak electricity including：
Judge whether the reverse current leakage is more than or equal to default reverse current leakage threshold value, if so, the LED lamp bead is leaked
Electricity, the LED lamp bead are defective products；If it is not, then the LED lamp bead leakproof, the LED lamp bead are non-defective unit.
7. electrical leakage detecting method as claimed in claim 6, which is characterized in that the default reverse current leakage threshold value is 1 μ A.
8. electrical leakage detecting method as claimed in claim 6, which is characterized in that described to judge whether the reverse current leakage is big
In equal to default reverse current leakage threshold value, if it is not, the then LED lamp bead leakproof, after the LED lamp bead is non-defective unit, also
Including：
By the VCC pin and the VCC test pin short circuits.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611238000.0A CN106653976B (en) | 2016-12-28 | 2016-12-28 | A kind of encapsulating structure and its electrical leakage detecting method of LED lamp bead |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611238000.0A CN106653976B (en) | 2016-12-28 | 2016-12-28 | A kind of encapsulating structure and its electrical leakage detecting method of LED lamp bead |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106653976A CN106653976A (en) | 2017-05-10 |
| CN106653976B true CN106653976B (en) | 2018-07-31 |
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ID=58832373
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611238000.0A Expired - Fee Related CN106653976B (en) | 2016-12-28 | 2016-12-28 | A kind of encapsulating structure and its electrical leakage detecting method of LED lamp bead |
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Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2770271Y (en) * | 2005-02-23 | 2006-04-05 | 东泰升电子（上海）有限公司 | LED colour lamp driver |
| TWI299405B (en) * | 2006-03-02 | 2008-08-01 | Macroblock Inc | Method and apparatus for silent current detection |
| CN201218471Y (en) * | 2008-05-21 | 2009-04-08 | 北京巨数数字技术开发有限公司 | Driving circuit integrated LED luminous element |
| CN102818157B (en) * | 2012-08-17 | 2016-05-11 | 深圳市中庆微科技开发有限公司 | A kind of LED lamp and LED module |
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