CN106653976A - Packaging structure of LED lamp bead and electric leakage detection method of packaging structure - Google Patents
Packaging structure of LED lamp bead and electric leakage detection method of packaging structure Download PDFInfo
- Publication number
- CN106653976A CN106653976A CN201611238000.0A CN201611238000A CN106653976A CN 106653976 A CN106653976 A CN 106653976A CN 201611238000 A CN201611238000 A CN 201611238000A CN 106653976 A CN106653976 A CN 106653976A
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- Prior art keywords
- lamp bead
- led lamp
- vcc
- led
- pin
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011324 bead Substances 0.000 title claims abstract description 91
- 238000001514 detection method Methods 0.000 title claims abstract description 18
- 238000004806 packaging method and process Methods 0.000 title abstract 9
- 238000012360 testing method Methods 0.000 claims abstract description 38
- 238000004020 luminiscence type Methods 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 16
- 230000002950 deficient Effects 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 11
- 230000000052 comparative effect Effects 0.000 claims description 6
- 238000007689 inspection Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a packaging structure of an LED lamp bead and an electric leakage detection method of the packaging structure. The packaging structure of the LED lamp bead comprises a lens packaging body and a bracket packaged into the lens packaging body, wherein the bracket is provided with a light-emitting chip and a drive chip; the bracket is also provided with a VCC pin, a GND pin and a VCC test pin, which extend out of the lens packaging body; the VCC pin is connected with a VCC end of the drive chip; the VCC test pin is connected with a positive electrode of the light-emitting chip; a negative electrode of the light-emitting chip is connected to a drain of an NMOS tube in the drive chip; and a source of the NMOS tube is connected to the GND pin. According to the packaging structure of the LED lamp bead, one VCC pin is added to be directly connected to the VCC end of the drive chip, the VCC pin is suspended during electric leakage detection and electric leakage detection is carried out on the VCC test pin and the GND pin of the LED lamp bead, so that the problem that the drive chip is burnt out due to the fact that the VCC end is connected to negative voltage is solved and the quality of an LED lamp bead product is also ensured.
Description
Technical field
The present invention relates to LED technology field, the encapsulating structure and its electrical leakage detecting method of more particularly to a kind of LED lamp bead.
Background technology
At present, finished product LED (Light Emitting Diode, light emitting diode) lamp bead can be produced due to many reasons
Leaky, and the life-span that the LED lamp bead of leaky occurs can greatly shorten, so leaking electricity to LED lamp bead before dispatching from the factory
Detection becomes an extremely important step of LED lamp bead product quality guarantee.
Traditional monochromatic LED lamp bead product detection of electrical leakage is tested with special electrical tester, for single colored chip
The LED lamp bead of encapsulation, by testing electrical property instrument backward voltage is adjusted to, and in LED lamp bead both positive and negative polarity pin backward voltage is added, and is read reverse
Current data, the reversing the current upper limit of general LED is defined as 1 μ A, if the reversing the current for reading is more than 1 μ A, is judged to electric leakage
Defective products.But the encapsulating structure that at present driving chip present on market is packaged together with LED lamp bead is as shown in figure 1, drive
VCC (Volt CurrentCondenser, the supply voltage) ends of chip are connected with the VCC ends (i.e. positive pole) of LED lamp bead, this
Encapsulating structure cannot carry out detection of electrical leakage, and its reason is, reverse when adding between VCC and GND (Ground, electric wire earth terminal)
During voltage, driving chip can be caused to burn because of VCC termination negative voltages.
Therefore for the LED lamp bead product that there is driving chip, how to carry out the encapsulation of LED lamp bead and carry out electric leakage inspection
Survey, be the problem of our urgent need to resolve to ensure the quality of LED lamp bead product.
The content of the invention
The invention provides the encapsulating structure and its electrical leakage detecting method of a kind of LED lamp bead, the encapsulating structure of the LED lamp bead
The VCC ends that a VCC pin is directly connected to driving chip are increased, it is when in detection of electrical leakage, VCC pin is hanging, using LED
The VCC test pins of lamp bead carry out detection of electrical leakage with GND pin, solve and burn out driving chip because of VCC termination negative voltages
Problem, has also ensured the quality of LED lamp bead product.
It is that, up to this purpose, the present invention is employed the following technical solutions：
On the one hand, there is provided a kind of encapsulating structure of LED lamp bead, the encapsulating structure of the LED lamp bead includes lens packages body
And the support being encapsulated in the lens packages body, luminescence chip and driving chip, the luminous core are provided with the support
Piece is electrically connected with the driving chip, and VCC pin, the GND for extending lens packages external body is additionally provided with the support
Pin and VCC test pins, the VCC pin is connected with the VCC ends of the driving chip, the VCC test pins and institute
The positive pole connection of luminescence chip is stated, the negative pole of the luminescence chip connects the drain electrode of the NMOS tube in the driving chip, described
The source electrode connection GND pin of NMOS tube.
Wherein, the grid of the NMOS tube connects the signal control end of the driving chip.
Wherein, the luminescence chip includes LED R luminescence chips, LED G luminescence chips and LED B luminescence chips, described
The positive pole of LED R luminescence chips, the LED G luminescence chips and the LED B luminescence chips is all connected with VCC test pins.
Wherein, the driving chip respectively with the LED R luminescence chips, the LED G luminescence chips and the LED B
Luminescence chip is electrically connected with, and is lighted with controlling the LED R luminescence chips, the LEDG luminescence chips and the LED B respectively
The gray scale of chip.
On the other hand, a kind of electrical leakage detecting method of the encapsulating structure based on above-mentioned LED lamp bead is additionally provided, the electric leakage inspection
Survey method, including：
VCC pin is hanging, and VCC test pins connect -5V voltages, and GND pin connects 0V voltages；
The electric current through the LED lamp bead is detected, the reverse current leakage of the LED lamp bead is obtained；
Judge that the LED lamp bead is according to the reverse current leakage and the comparative result of default reverse current leakage threshold value
No electric leakage.
Wherein, it is described according to the reverse current leakage and the comparative result of default reverse current leakage threshold value judge
LED lamp bead whether leak electricity including：
The reverse current leakage is judged whether more than or equal to default reverse current leakage threshold value, if so, the then LED
Pearl is leaked electricity, and the LED lamp bead is defective products；If it is not, the then LED lamp bead leakproof, the LED lamp bead is non-defective unit.
Wherein, the default reverse current leakage threshold value is 1 μ A.
Wherein, it is described whether to judge the reverse current leakage more than or equal to default reverse current leakage threshold value, if it is not, then
The LED lamp bead leakproof, the LED lamp bead is after non-defective unit, also to include：
By the VCC pin and the VCC test pin short circuits.
Compared with prior art, beneficial effects of the present invention are：The encapsulating structure of the LED lamp bead that the present invention is provided includes：
Lens packages body and the support being encapsulated in the lens packages body, are provided with luminescence chip and driving chip on the support,
The luminescence chip is electrically connected with the driving chip, is additionally provided with the support and extends lens packages external body
VCC pin, GND pin and VCC test pins, the VCC pin is connected with the VCC ends of the driving chip, the VCC
Test pins are connected with the positive pole of the luminescence chip, and the negative pole of the luminescence chip connects the NMOS tube in the driving chip
Drain electrode, the NMOS tube source electrode connection GND pin.The encapsulating structure of the LED lamp bead that the present invention is provided increased a VCC
Pin is directly connected to the VCC ends of driving chip, when in detection of electrical leakage, VCC pin is hanging, using the VCC of LED lamp bead
Test pins carry out detection of electrical leakage with GND pin；It is after non-defective unit if detecting, by VCC pin and VCC test pin short circuits, i.e.,
Can normally use, solve the problems, such as to burn out driving chip because of VCC termination negative voltages, also ensure the product of LED lamp bead product
Matter.
Description of the drawings
Technical scheme in order to be illustrated more clearly that the embodiment of the present invention, below will be to institute in embodiment of the present invention description
The accompanying drawing that needs are used is briefly described, it should be apparent that, drawings in the following description are only some enforcements of the present invention
Example, for those of ordinary skill in the art, on the premise of not paying creative work, can be with according to present invention enforcement
The content of example and these accompanying drawings obtain other accompanying drawings.
Fig. 1 is the structural representation of the encapsulating structure that the driving chip that prior art is present is packaged together with LED lamp bead.
Fig. 2 is that a kind of structural representation one of the encapsulating structure of LED lamp bead is provided in the specific embodiment of the invention.
Fig. 3 is that a kind of structural representation two of the encapsulating structure of LED lamp bead is provided in the specific embodiment of the invention.
Fig. 4 is that a kind of luminescence chip provided in the specific embodiment of the invention passes through driving from positive pole VCC test pins
NMOS tube in chip is connected to the schematic diagram of the electric-leakage detection circuit of negative pole GND pin.
Fig. 5 is a kind of method flow diagram of the electrical leakage detecting method of the LED lamp bead provided in the specific embodiment of the invention.
Specific embodiment
For make present invention solves the technical problem that, the technical scheme that adopts and the technique effect that reaches it is clearer, below
Accompanying drawing will be combined to be described in further detail the technical scheme of the embodiment of the present invention, it is clear that described embodiment is only
It is a part of embodiment of the invention, rather than the embodiment of whole.Based on the embodiment in the present invention, those skilled in the art exist
The every other embodiment obtained under the premise of creative work is not made, the scope of protection of the invention is belonged to.
Refer to Fig. 2 and Fig. 3, Fig. 2 be a kind of LED lamp bead provided in the specific embodiment of the invention encapsulating structure
Structural representation one, the figure is the top view of encapsulating structure；Fig. 3 is a kind of LED provided in the specific embodiment of the invention
The structural representation two of the encapsulating structure of pearl, as illustrated, the encapsulating structure of the LED lamp bead includes lens packages body and is encapsulated in
Support in the lens packages body, is provided with luminescence chip and driving chip on the support, the luminescence chip with it is described
Driving chip is electrically connected with, be additionally provided with the support extend the VCC pin of lens packages external body, GND pin and
VCC test pins, the VCC pin is connected with the VCC ends of the driving chip, and the VCC test pins are luminous with described
The positive pole connection of chip, the negative pole of the luminescence chip connects the drain electrode of the NMOS tube in the driving chip, the NMOS tube
Source electrode connection GND pin.The support may also include other pins according to product needed, be also merely not only VCC pin,
GND pin and VCC test pins, the VCC pin is not connected to the VCC test pins.
It should be noted that the VCC ends connection VCC of positive pole connection VCC test pins, the i.e. luminescence chip of luminescence chip
Test pins.The embodiment of the present invention increased the VCC ends that a VCC pin is directly connected to driving chip, the VCC ends of driving chip
It is not connected to the VCC ends of luminescence chip, it is when in detection of electrical leakage, VCC pin is hanging, drawn using the VCC test of LED lamp bead
Pin carries out detection of electrical leakage with GND pin, solves the problems, such as VCC termination negative electricity and burns out driving chip, has also ensured LED lamp bead
The quality of product.
Further, as shown in figure 4, a kind of luminescence chip provided in its specific embodiment of the invention is from positive pole VCC
NMOS tube of the test pins in driving chip is connected to the schematic diagram of the electric-leakage detection circuit of negative pole GND pin, as schemed institute
Show, the driving chip includes a NOMS pipe, the negative pole of the luminescence chip connects the drain electrode (D poles) of the NMOS tube, institute
State source electrode (S poles) the connection GND pin of NMOS tube.The grid (G poles) of the NMOS tube connects the signal control of the driving chip
End processed.NMOS tube connection GND pin of the luminescence chip in the driving chip, when the VCC test ends of LED lamp bead
When connecing backward voltage, the parasitic diode that NMOS tube is produced makes NMOS reverse-conductings, if now LED lamp bead has electric leakage, electric leakage inspection
Slowdown monitoring circuit will produce reverse current leakage, if reverse current leakage is excessive, illustrate the LED lamp bead for defective products, needs
Screen out.
Further, the luminescence chip includes LED R luminescence chips, LED G luminescence chips and LED B luminescence chips,
The positive pole of the LED R luminescence chips, the LED G luminescence chips and the LED B luminescence chips is all connected with VCC test and draws
Pin, i.e. LED lamp bead are multi-colored led lamp bead, and it is red, green, blue that R, G, B are corresponding respectively, and LED R luminescence chips, the LED G send out
The positive pole (i.e. VCC ends) of optical chip and the LED B luminescence chips is all connected with VCC test pins, so makes wiring simpler
It is single, it is also convenient for providing voltage to each luminescence chip.
Further, the driving chip respectively with the LED R luminescence chips, LED G luminescence chips and described
LED B luminescence chips are electrically connected with, to control the LED R luminescence chips, the LED G luminescence chips and the LED respectively
The gray scale of B luminescence chips, and then control LED lamp bead shows different colors.
A kind of detection of electrical leakage side of the encapsulating structure based on above-mentioned LED lamp bead is additionally provided in the specific embodiment of the invention
Method, as shown in figure 5, it is a kind of method stream of the electrical leakage detecting method of the LED lamp bead provided in the specific embodiment of the invention
Cheng Tu, as illustrated, the electrical leakage detecting method, including：
Step S101：VCC pin is hanging, and VCC test pins connect -5V voltages, and GND pin connects 0V voltages.VCC is drawn
Pin is hanging, is to burn chip in order to avoid the VCC termination negative voltages of driving chip；VCC test pins meet -5V voltages, GND
Pin connects 0V voltages, even if luminescence chip connects backward voltage, when the VCC test of LED lamp bead terminate backward voltage, and NMOS tube
The parasitic diode of generation makes NMOS reverse-conductings, if now LED lamp bead has electric leakage, will produce reverse current leakage, such as Fig. 3
It is shown.
Step S102：The electric current through the LED lamp bead is detected, the reverse current leakage of the LED lamp bead is obtained.Make
LED lamp bead is connect after backward voltage, detects the electric current through the LED lamp bead, and the electric current is the reverse leakage electricity of LED lamp bead
Stream.
Step S103：According to the reverse current leakage and the comparative result of default reverse current leakage threshold value judge
Whether LED lamp bead leaks electricity.
Specifically, it is described that institute is judged with the comparative result of default reverse current leakage threshold value according to the reverse current leakage
State LED lamp bead whether leak electricity including：
The reverse current leakage is judged whether more than or equal to default reverse current leakage threshold value, if so, the then LED
Pearl is leaked electricity, and the LED lamp bead is defective products；If it is not, the then LED lamp bead leakproof, the LED lamp bead is non-defective unit.
Used as a preferred embodiment, the default reverse current leakage threshold value is 1 μ A, and user can also be according to product
Require, select other default reverse current leakage threshold values, do not limit here.
Further, it is described whether to judge the reverse current leakage more than or equal to default reverse current leakage threshold value, if
No, then the LED lamp bead leakproof, the LED lamp bead is after non-defective unit, also to include：By the VCC pin and the VCC
Test pin short circuits.It is convenient by VCC pin and VCC test pin short circuits, you can normally use if LED lamp bead is non-defective unit
Voltage is provided to LED lamp bead and driving chip.
The encapsulating structure of the LED lamp bead that the present invention is provided increased the VCC that a VCC pin is directly connected to driving chip
End, it is when in detection of electrical leakage, VCC pin is hanging, carry out electric leakage inspection using the VCC test pins and GND pin of LED lamp bead
Survey；If it is after non-defective unit, by VCC pin and VCC test pin short circuits, you can normally use, to solve because of VCC terminations to detect
Negative voltage and burn out the problem of driving chip, also ensured the quality of LED lamp bead product.
The know-why of the present invention is described above in association with specific embodiment.These descriptions are intended merely to explain the present invention's
Principle, and limiting the scope of the invention can not be by any way construed to, it is also simply of the invention shown in accompanying drawing
One of embodiment, actual structure is not limited thereto.Based on explanation herein, those skilled in the art need not pay
Performing creative labour can associate other specific embodiments of the present invention, and these modes fall within the protection model of the present invention
Within enclosing.
Claims (8)
1. a kind of encapsulating structure of LED lamp bead, including lens packages body and the support being encapsulated in the lens packages body, it is described
Luminescence chip and driving chip are provided with support, the luminescence chip is electrically connected with the driving chip, it is characterised in that
VCC pin, GND pin and the VCC test pins for extending lens packages external body is additionally provided with the support, it is described
VCC pin is connected with the VCC ends of the driving chip, and the VCC test pins are connected with the positive pole of the luminescence chip, institute
The negative pole for stating luminescence chip connects the drain electrode of the NMOS tube in the driving chip, the source electrode connection GND pin of the NMOS tube.
2. a kind of encapsulating structure of LED lamp bead as claimed in claim 1, it is characterised in that the grid connection of the NMOS tube
The signal control end of the driving chip.
3. a kind of encapsulating structure of LED lamp bead as claimed in claim 1, it is characterised in that the luminescence chip includes LED R
Luminescence chip, LED G luminescence chips and LED B luminescence chips, the LED R luminescence chips, the LED G luminescence chips and institute
The positive pole for stating LED B luminescence chips is all connected with VCC test pins.
4. the encapsulating structure of a kind of LED lamp bead as described in right wants 3, it is characterised in that the driving chip respectively with it is described
LED R luminescence chips, the LED G luminescence chips and the LED B luminescence chips are electrically connected with, to control the LED respectively
The gray scale of R luminescence chips, the LED G luminescence chips and the LED B luminescence chips.
5. a kind of detection of electrical leakage of the LED lamp bead of the encapsulating structure of the LED lamp bead based on described in Claims 1-4 any one
Method, it is characterised in that include：
VCC pin is hanging, and VCC test pins connect -5V voltages, and GND pin connects 0V voltages；
The electric current through the LED lamp bead is detected, the reverse current leakage of the LED lamp bead is obtained；
Judge whether the LED lamp bead leaks with the comparative result of default reverse current leakage threshold value according to the reverse current leakage
Electricity.
6. electrical leakage detecting method as claimed in claim 5, it is characterised in that it is described according to the reverse current leakage with it is default
The comparative result of reverse current leakage threshold value judge the LED lamp bead whether leak electricity including：
Judge the reverse current leakage whether more than or equal to default reverse current leakage threshold value, the if so, then LED lamp bead leakage
Electricity, the LED lamp bead is defective products；If it is not, the then LED lamp bead leakproof, the LED lamp bead is non-defective unit.
7. electrical leakage detecting method as claimed in claim 6, it is characterised in that the default reverse current leakage threshold value is 1 μ A.
8. electrical leakage detecting method as claimed in claim 6, it is characterised in that described to judge whether the reverse current leakage is big
In equal to default reverse current leakage threshold value, if it is not, the then LED lamp bead leakproof, the LED lamp bead is after non-defective unit, also
Including：
By the VCC pin and the VCC test pin short circuits.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611238000.0A CN106653976B (en) | 2016-12-28 | 2016-12-28 | A kind of encapsulating structure and its electrical leakage detecting method of LED lamp bead |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611238000.0A CN106653976B (en) | 2016-12-28 | 2016-12-28 | A kind of encapsulating structure and its electrical leakage detecting method of LED lamp bead |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106653976A true CN106653976A (en) | 2017-05-10 |
| CN106653976B CN106653976B (en) | 2018-07-31 |
Family
ID=58832373
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611238000.0A Expired - Fee Related CN106653976B (en) | 2016-12-28 | 2016-12-28 | A kind of encapsulating structure and its electrical leakage detecting method of LED lamp bead |
Country Status (1)
| Country | Link |
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| CN (1) | CN106653976B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114355166A (en) * | 2022-01-10 | 2022-04-15 | 深圳市斯迈得半导体有限公司 | LED packaged chip detection device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2770271Y (en) * | 2005-02-23 | 2006-04-05 | 东泰升电子（上海）有限公司 | LED colour lamp driver |
| US20070205793A1 (en) * | 2006-03-02 | 2007-09-06 | Hung-Tsung Wang | Method and apparatus for silent current detection |
| CN201218471Y (en) * | 2008-05-21 | 2009-04-08 | 北京巨数数字技术开发有限公司 | Driving circuit integrated LED luminous element |
| CN102818157A (en) * | 2012-08-17 | 2012-12-12 | 深圳市中庆微科技开发有限公司 | LED (light emitting diode) lamp and LED module |
-
2016
- 2016-12-28 CN CN201611238000.0A patent/CN106653976B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2770271Y (en) * | 2005-02-23 | 2006-04-05 | 东泰升电子（上海）有限公司 | LED colour lamp driver |
| US20070205793A1 (en) * | 2006-03-02 | 2007-09-06 | Hung-Tsung Wang | Method and apparatus for silent current detection |
| CN201218471Y (en) * | 2008-05-21 | 2009-04-08 | 北京巨数数字技术开发有限公司 | Driving circuit integrated LED luminous element |
| CN102818157A (en) * | 2012-08-17 | 2012-12-12 | 深圳市中庆微科技开发有限公司 | LED (light emitting diode) lamp and LED module |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114355166A (en) * | 2022-01-10 | 2022-04-15 | 深圳市斯迈得半导体有限公司 | LED packaged chip detection device |
| CN114355166B (en) * | 2022-01-10 | 2024-06-04 | 深圳市斯迈得半导体有限公司 | LED packaging chip detection device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106653976B (en) | 2018-07-31 |
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Granted publication date: 20180731 Termination date: 20191228 |