CN106653966A - GaN nanorod grown on strontium tantalum lanthanum aluminate substrate and preparation method and application thereof - Google Patents

GaN nanorod grown on strontium tantalum lanthanum aluminate substrate and preparation method and application thereof Download PDF

Info

Publication number
CN106653966A
CN106653966A CN201610940455.0A CN201610940455A CN106653966A CN 106653966 A CN106653966 A CN 106653966A CN 201610940455 A CN201610940455 A CN 201610940455A CN 106653966 A CN106653966 A CN 106653966A
Authority
CN
China
Prior art keywords
gan
substrate
nano
pillar
pillars
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610940455.0A
Other languages
Chinese (zh)
Inventor
李国强
朱运农
李筱婵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
South China University of Technology SCUT
Original Assignee
South China University of Technology SCUT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by South China University of Technology SCUT filed Critical South China University of Technology SCUT
Priority to CN201610940455.0A priority Critical patent/CN106653966A/en
Publication of CN106653966A publication Critical patent/CN106653966A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds

Abstract

The invention belongs to the technical field of GaN nanorod preparation, and discloses a GaN nanorod grown on a strontium tantalum lanthanum aluminate substrate and a preparation method and an application thereof. The GaN nanorod grown on the strontium tantalum lanthanum aluminate substrate comprises the strontium tantalum lanthanum aluminate substrate, a GaN nanorod template layer grown on the strontium tantalum lanthanum aluminate substrate and a GaN nanorod array grown on the GaN nanorod template layer; an epitaxial surface is formed by a plane (111), deviating from a direction (100) for 0.5-1 degrees, of the strontium tantalum lanthanum aluminate substrate; and a crystal epitaxial orientation relationship is as follows: a plane (0001) of the GaN is parallel to the plane (111) of the La<0.3>Sr<1.7>AlTaO<6> substrate. The preparation method is simple, and the prepared GaN nanorod array is controllable in dimensions and has the characteristics of good crystal quality, low defect density, and stress relaxation.

Description

The GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate and its preparation method and application
Technical field
The present invention relates to GaN nano-pillars, are more particularly to grown in strontium aluminate tantalum lanthanum (La0.3Sr1.7AlTaO6) on substrate GaN nano-pillars and preparation method and application.
Background technology
GaN and III- group-III nitrides are full due to broad stopband, stable physicochemical properties, high thermal conductivity and high electronics And the advantages of speed, it is widely used in the aspects such as light emitting diode (LED), laser instrument and opto-electronic device.With other broad stopbands Semi-conducting material is compared, and in addition to above-mentioned advantage, its nano level material is in quantum effect, interfacial effect, volume for GaN material The aspects such as effect, dimensional effect also show the characteristic of more novelties.
GaN nano materials generate series of novel characteristic because of " dimensional effect " so that it is in basic physics and newly Type technology application aspect has huge prospect, it has also become the focus of current research.And GaN nanometers rod structure is even more and is received in preparation More excellent performance is shown on rice scope luminescent device such as LED, LD.
At present, GaN base device is mainly based upon Sapphire Substrate.Sapphire is up to 16.9% with the lattice mismatch of GaN, leads Cause to form very high dislocation density during extension GaN, so as to reduce the carrier mobility of material, shorten the carrier longevity Life, and then have impact on the performance of GaN base device.Secondly as the Thermal sapphire coefficient of expansion (6.63 × 10 under room temperature-6K-1) compared with The thermal coefficient of expansion (5.6 × 10 of GaN-6K-1) big, thermal mismatching degree between the two is about -18.4%；When outer layer growth terminates Afterwards, device can produce very big compression from epitaxially grown High-temperature cooling to room temperature process, be easily caused film and substrate Cracking.Again, due to sapphire thermal conductivity low (being 25W/mK when 100 DEG C), it is difficult to the heat produced in chip is timely Discharge, cause thermal accumlation, making the internal quantum efficiency of device reduces, the performance of final impact device.Therefore it is urgent to find a kind of Suitable method is reducing the defect concentration and overstrain of GaN epitaxial layer.
The content of the invention
In order to overcome the disadvantages mentioned above and deficiency of prior art, it is an object of the invention to provide one kind is grown in strontium aluminate GaN nano-pillars on tantalum lanthanum substrate.The strontium aluminate tantalum lanthanum substrate of the present invention is relatively matched with GaN lattices and thermal coefficient of expansion.Aluminic acid Strontium tantalum lanthanum backing material is only 0.1% with the lattice mismatch rate of GaN, and thermal mismatching little (3.6%) is conducive to the forming core of GaN；It is based on The GaN nano-pillars of this backing material growth, dislocation density low advantage good with crystal mass.
Another object of the present invention is to provide the preparation side of the above-mentioned GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate Method.Research finds that the nanometer rod structure for being reduced in size to nanometer range formation of GaN epitaxial layer is deformation relaxation, is not almost had Defective, crystal mass is high.Therefore, GaN nanometers rod structure have the optical quality higher than film, be prepare it is higher optical Alternative material of energy GaN base device.
It is still another object of the present invention to provide the application of the above-mentioned GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate.
The purpose of the present invention is achieved through the following technical solutions：
The GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate, including strontium aluminate tantalum lanthanum substrate, are grown in strontium aluminate tantalum lanthanum GaN nano-pillar template layers on substrate, the GaN nano column arrays being grown on GaN nano-pillar template layers.
The GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate also include separation layer, and the isolation is deposited upon not By GaN nano-pillars template layer cover substrate on or GaN nano-pillar template layers side wall and not by GaN nano-pillars template layer covering Substrate on.The material of the separation layer is SiNx.The thickness of the separation layer is 30～200nm.
The GaN nano-pillars template layer is that the GaN preformed layers being grown on strontium aluminate tantalum lanthanum substrate are passed through into nano impression Technology etches the good nano-pillar of homogeneity as the template of selective area growth.
The strontium aluminate tantalum lanthanum substrate is La0.3Sr1.7AlTaO6Substrate is outer with (111) face 0.5～1 ° of (100) direction partially Prolong face；Crystalline epitaxial orientation relationship is：(0001) face of GaN is parallel to La0.3Sr1.7AlTaO6(111) face of substrate.
(0001) face of GaN is parallel to La in the GaN nano-pillars template layer0.3Sr1.7AlTaO6Substrate (LSAT) (111) face, i.e. GaN (0001) //LSAT (111).
The GaN nano-pillars template layer is nano column array, and the thickness of the GaN nano-pillars template layer is GaN preformed layers Thickness be 0.3～4 μm, preferably 1～4 μm；The thickness of nano-pillar is 0.2～2 μm in the GaN nano column arrays；It is preferred that For 0.3～2 μm.
The average diameter of the nano-pillar of the template layer be 200～500nm, the average headway between nano-pillar be 450～ 600nm。
The thickness of the separation layer is 30～200nm.
The preparation method of the GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate, comprises the following steps：
(1) selection of substrate and its crystal orientation：Using La0.3Sr1.7AlTaO6Substrate, with (111) face (100) direction partially 0.5～1 ° is epitaxial surface, and crystalline epitaxial orientation relationship is：(0001) face of GaN parallel to LSAT (111) face, i.e. GaN (0001)//LSAT(111)。La0.3Sr1.7AlTaO6[111] direction has and the side's symmetry of GaN [0001] identical six, six sides The La of phase0.3Sr1.7AlTaO6(111) lattice parameter is a=0.7730nm, brilliant for the GaN of a=0.6312nm with lattice parameter Lattice mismatch as little as 0.1%, it is ensured that the Lattice Matching between substrate and film；La0.3Sr1.7AlTaO6Thermal coefficient of expansion be 5.8×10-6K-1, the thermal coefficient of expansion of GaN is 5.6 × 10-6K-1, its thermal mismatching degree as little as 3.6% is unfavorable for the formation of stress, Contribute to epitaxial growth high-quality GaN nano-pillar.
(2) substrate surface polishing, cleaning and annealing：Substrate annealing process：Place the substrate into annealing indoor, To La at 800～900 DEG C0.3Sr1.7AlTaO6Substrate carries out 0.5～1h of annealing；
(5) the prefabricated layer epitaxially growns of GaN：Underlayer temperature control at 450～550 DEG C, reative cell pressure be 5.0～ 8.0×10-9Pa, substrate rotating speed is 5～10r/min, and target-substrate distance is 50～80mm, while laser in pulsed laser deposition (PLD) Wavelength is 248nm, and laser energy is 220～280mJ/cm2, 10～30Hz of frequency, the plasma flow of nitrogen is 3～ 10sccm, RF activation power is 200～500W, is using GaN cushions are grown under conditions of superlaser bombardment ceramics GaN targets GaN preformed layers；The interfacial reaction between substrate and film can effectively be suppressed, while providing enough lifes for epitaxial growth Long energy, enough GaN presomas energy needed for substrate surface migration, realizes low-temperature epitaxy growth.
(6) preparation (making of GaN nano-pillar selective area growth templates) of GaN nano-pillars template layer：By adopting TracePro Software for Design simultaneously optimizes the arrangement of nano-pillar, recycles ICP lithographic techniques that GaN preformed layers are etched into into GaN nanometers Column template layer, the average diameter of the nano-pillar of template layer is 200～500nm, the average headway between nano-pillar 450～ 600nm；The GaN nano-pillars homogeneity of template layer is good, used as selective area growth template.
(7) preparation of separation layer：Covered in GaN nano-pillars template layer and not by the nano-pillar of template layer using PECVD technique Layer deposited isolating on the substrate of lid, then etch away the separation layer (SiN above the nano-pillar of template layerx), leave GaN nano-pillar moulds Flaggy side wall and by template layer nano-pillar cover substrate on (interstitial site) separation layer (SiNx), to prevent GaN Grain is deposited on interstitial site.The thickness of separation layer is 30～200nm.
(8) preparation of high-quality GaN nano-pillar：At 700～900 DEG C, substrate rotating speed is 5～10r/ for underlayer temperature control Min, target-substrate distance is 50～80mm, while optical maser wavelength is 248nm in PLD, laser energy is 220～340mJ/cm2, frequency 10 ～30Hz, the plasma flow of nitrogen is 3～10sccm, and RF activation power is 200～500W, using superlaser bombardment ceramics Under conditions of GaN targets on GaN nano-pillar template layers grow GaN nano-pillars.
Substrate surface is polished：By La0.3Sr1.7AlTaO6Substrate surface diamond mud is polished, and coordinates optics to show Micro mirror observes substrate surface, after without cut, then is processed by shot blasting using the method for chemically-mechanicapolish polishing.
Substrate is cleaned：By La0.3Sr1.7AlTaO6It is clear that substrate toluene, acetone, ethanol carry out standard ultrasound to substrate respectively Each 10min is washed, deionized water rinses 10min repeatedly, afterwards with V (H2SO4)：V(H2O2)：V(H2O mixing immersion)=4: 1: 1 Bubble 10min removes surface organic matter to remove surface residue and oxide layer, then after deionized water is cleaned up repeatedly, finally Dried up with high-purity drying nitrogen.
The thickness of the GaN preformed layers is 0.3～4 μm, preferably 1～4 μm；GaN preformed layers are next making GaN nanometers Column template lays the foundation.
The thickness of the GaN nano-pillars is 0.2～2 μm, preferably 0.3～2 μm.
The GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate, can be used to prepare LED, photodetector and the sun Can battery.
Compared with prior art, the present invention has advantages below and beneficial effect：
(1) present invention uses strontium aluminate tantalum lanthanum as substrate, La0.3Sr1.7AlTaO6Substrate is little with GaN lattice mismatches (0.1%), thermal mismatching little (3.6%), and low price, advantageously reduces production cost.
(2) the GaN nano-pillars that the present invention is prepared, X-ray rocking curve half-peak breadth numerical value is little, and crystal mass is high, position Dislocation density is low.On the one hand, using the strontium aluminate tantalum lanthanum little with GaN lattice mismatches and thermal mismatching degree as substrate, can be effective The formation of thermal stress and dislocation is reduced, is conducive to the growth of high-quality GaN nano-pillar；On the other hand, GaN nanometers rod structure is to answer Become relaxation, almost without defect, crystal mass is high.The current-carrying of the GaN nanometer base for post photoelectric material devices for finally preparing Sub- radiation recombination efficiency is high, can increase substantially nitride device such as semiconductor laser, light emitting diode and solar cell Luminous efficiency.
(3) growth technique of the invention is simple, with repeatability.
Description of the drawings
Fig. 1 is the Making programme figure of the GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate prepared by embodiment 1；
Fig. 2 is the structural representation of the GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate of the present invention；
Fig. 3 is the high-energy electron diffiraction of the GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate prepared by embodiment 1 (RHEED) collection of illustrative plates；
Fig. 4 is the height of (GaN (0002)) of the GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate prepared by embodiment 1 Differentiate X-ray diffraction (HRXRD) collection of illustrative plates；
Fig. 5 is the height of (GaN (10-12)) of the GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate prepared by embodiment 1 Differentiate X-ray diffraction (HRXRD) collection of illustrative plates.
Specific embodiment
With reference to embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not limited In this.
The structural representation of the GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate of the present invention is as shown in Fig. 2 wherein 1- La0.3Sr1.7AlTaO6Substrate, 2-GaN nano-pillar template layers, 3- separation layers, 4-GaN nano column arrays.
The GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate, including strontium aluminate tantalum lanthanum substrate 1, are grown in strontium aluminate tantalum GaN nano-pillars template layer 2 on lanthanum substrate 1, the GaN nano column arrays 4 being grown on GaN nano-pillars template layer 2.The growth GaN nano-pillars on strontium aluminate tantalum lanthanum substrate also include separation layer 3, and the separation layer 3 is deposited on not by GaN nanometer column templates Layer 2 cover substrates on or GaN nano-pillars template layer 2 side wall and by GaN nano-pillars template layer covering substrate 1 on.Institute The thickness for stating GaN nano-pillar template layers is 0.3～4 μm；The average diameter of the nano-pillar of the template layer is 200～500nm, is received Average headway between meter Zhu is 450～600nm.The thickness of nano-pillar is 0.2～2 μm in the GaN nano column arrays.It is described The thickness of separation layer is 30～200nm.The strontium aluminate tantalum lanthanum substrate is La0.3Sr1.7AlTaO6Substrate is inclined with (111) face (100) 0.5～1 ° of direction is epitaxial surface；Crystalline epitaxial orientation relationship is：(0001) face of GaN is parallel to La0.3Sr1.7AlTaO6 (111) face of substrate.
Embodiment 1
The preparation method of the GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate, comprises the following steps：
(1) selection of substrate and its crystal orientation：Using La0.3Sr1.7AlTaO6Substrate, with (111) face (100) direction partially 0.5～1 ° is epitaxial surface, and crystalline epitaxial orientation relationship is：(0001) face of GaN parallel to LSAT (111) face, i.e. GaN (0001)//La0.3Sr1.7A1TaO6(111)；
(2) substrate surface polishing：By La0.3Sr1.7AlTaO6Substrate surface diamond mud is polished, and coordinates optics Micro- sem observation substrate surface, after without cut, then is processed by shot blasting using the method for chemically-mechanicapolish polishing；
(3) substrate cleaning：By La0.3Sr1.7AlTaO6Substrate toluene, acetone, ethanol carry out respectively standard to substrate and surpass Sound cleans each 10min, and deionized water rinses 10min repeatedly, afterwards with V (H2SO4)∶V(H2O2)∶V(H2O mixing)=4: 1: 1 Immersion is steeped 10min and removes surface organic matter to remove surface residue and oxide layer, then after deionized water is cleaned up repeatedly, Finally dried up with high-purity drying nitrogen；
(4) substrate annealing is processed：Annealing is placed the substrate into indoor, to La at 800 DEG C0.3Sr1.7AlTaO6Substrate is carried out Annealing 0.5h；
(5) the prefabricated layer epitaxially growns of GaN：At 450 DEG C, the pressure of reative cell is 6.0 × 10 for underlayer temperature control-9Pa, lining Bottom rotating speed is 5r/min, and target-substrate distance is 60mm, while optical maser wavelength is 248nm in PLD, laser energy is 250mJ/cm2, frequency 10Hz, the plasma flow of nitrogen is 4sccm, and RF activation power is 500W, and using superlaser the condition of ceramics GaN targets is bombarded Lower growth 300nm GaN cushions (i.e. GaN preformed layers)；The interfacial reaction between substrate and film can effectively be suppressed, together When provide enough growth energies for epitaxial growth, enough GaN presomas energy needed for substrate surface migration is realized outside low temperature Epitaxial growth；
(6) making of the preparation (GaN nano-pillar selective area growth templates) of GaN nano-pillars template layer：By adopting TracePro Software for Design simultaneously optimizes the arrangement of nano-pillar, recycles ICP lithographic techniques that GaN preformed layers are etched into into GaN nanometers Column template layer, the average diameter of the nano-pillar of template layer is 300nm, and the average headway between nano-pillar is 500nm, nano-pillar mould Plate thickness is 0.3 μm；
(7)SiNxThe preparation on barrier layer：30nmSiN is deposited using PECVD technique on GaN nano-pillar template layersxStop Layer, then etch away the SiN above nano-pillarx, leave behind interstitial site (substrate not covered by the nano-pillar of template layer) SiNx, to prevent GaN particles to be deposited on interstitial site；
(8) preparation of high-quality GaN nano-pillar：At 850 DEG C, substrate rotating speed is 5r/min, target-substrate distance for underlayer temperature control For 60mm, while optical maser wavelength is 248nm in PLD, laser energy is 250mJ/cm2, frequency 10Hz, the plasma flow of nitrogen For 5sccm, RF activation power is 500W, using under conditions of superlaser bombardment ceramics GaN targets on GaN nano-pillar template layers (i.e. in the nano-pillar of GaN nano-pillars template layer) growth thickness is 1 μm of GaN nano-pillars.
The Making programme figure of the GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate manufactured in the present embodiment is as shown in Figure 1.
Fig. 3 is the high-energy electron diffiraction for being grown in GaN nano-pillars on strontium aluminate tantalum lanthanum substrate prepared by embodiment 1 (RHEED) collection of illustrative plates, image is fine streaks, it is known that for the monocrystalline GaN of surfacing.
Fig. 4 is the height of (GaN (0002)) of the GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate prepared by embodiment 1 Differentiate X-ray diffraction (HRXRD) collection of illustrative plates, it is known that GaN (0002) halfwidth is 223aresec, defect concentration is low, and crystal mass is very It is good.
Fig. 5 is the height of (GaN (10-12)) of the GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate prepared by embodiment 1 Differentiate X-ray diffraction (HRXRD) collection of illustrative plates, it is known that GaN (10-12) halfwidth is 238aresec, defect concentration is low, crystal mass Very well.
The GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate manufactured in the present embodiment are used to prepare MSM type ultraviolet lights Electric explorer：In the GaN film being grown on strontium aluminate tantalum lanthanum substrate manufactured in the present embodiment, photoetching development is carried out successively, electricity Beamlet hydatogenesis electrode forms the techniques such as Schottky contacts, annealing.Wherein depositing electrode thickness is about 80 μm, and annealing temperature is 500 DEG C, annealing time is 180s.Under 5V biass, dark current is only 9pA to photodetector prepared by the present embodiment；And Under 3V biass, the maximum of responsiveness has reached 0.35A/W to device at 365nm；The photoresponse time is less than 26ms.
Embodiment 2
The preparation method of the GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate, comprises the following steps：
(1) selection of substrate and its crystal orientation：Using La0.3Sr1.7AlTaO6Substrate, with (111) face (100) direction partially 0.5～1 ° is epitaxial surface, and crystalline epitaxial orientation relationship is：(0001) face of GaN parallel to LSAT (111) face, i.e. GaN (0001)//La0.3Sr1.7AlTaO6(111)；
(2) substrate surface polishing：By La0.3Sr1.7AlTaO6Substrate surface diamond mud is polished, and coordinates optics Micro- sem observation substrate surface, after without cut, then is processed by shot blasting using the method for chemically-mechanicapolish polishing；
(3) substrate cleaning：By La0.3Sr1.7AlTaO6Substrate toluene, acetone, ethanol carry out respectively standard to substrate and surpass Sound cleans each 10min, and deionized water rinses 10min repeatedly, afterwards with V (H2SO4)∶V(H2O2)∶V(H2O mixing)=4: 1: 1 Immersion is steeped 10min and removes surface organic matter to remove surface residue and oxide layer, then after deionized water is cleaned up repeatedly, Finally dried up with high-purity drying nitrogen；
(4) substrate annealing is processed：Annealing is placed the substrate into indoor, to La at 800 DEG C0.3Sr1.7AlTaO6Substrate is carried out Annealing 0.5h；
(5) the prefabricated layer epitaxially growns of GaN：At 450 DEG C, the pressure of reative cell is 5.0 × 10 for underlayer temperature control-9Pa, lining Bottom rotating speed is 5r/min, and target-substrate distance is 60mm, while optical maser wavelength is 248nm in PLD, laser energy is 250mJ/cm2, frequency 10Hz, the plasma flow of nitrogen is 4sccm, and RF activation power is 500W, and using superlaser the condition of ceramics GaN targets is bombarded Lower growth 500nm GaN cushions；The interfacial reaction between substrate and film can effectively be suppressed, while carrying for epitaxial growth For enough growth energies, enough GaN presomas energy needed for substrate surface migration realizes low-temperature epitaxy growth；
(6) making of GaN nano-pillars template layer (i.e. GaN nano-pillars selective area growth template)：By soft using TracePro Part designs and optimizes the arrangement of nano-pillar, recycles ICP lithographic techniques that GaN preformed layers are etched into into GaN nano-pillar template layers and (carves Lose the good GaN nano-pillars of homogeneity as selective area growth template), the thickness of nano-pillar template layer is 0.5 μm, nano-pillar it is flat A diameter of 400nm, the average headway between nano-pillar is in 450nm；
(7)SiNxThe preparation on barrier layer：Do not covered by template layer in GaN nano-pillars template layer and using PECVD technique 150nm SiN are deposited on substratexBarrier layer, then etch away the SiN above template layer nano-pillarx, leave behind the SiN of interstitial sitex (substrate not covered by template layer), to prevent GaN particles to be deposited on interstitial site；
(8) preparation of high-quality GaN nano-pillar (i.e. GaN nano column arrays)：At 850 DEG C, substrate turns for underlayer temperature control Speed is 5r/min, and target-substrate distance is 60mm, while optical maser wavelength is 248nm in PLD, laser energy is 250mJ/cm2, frequency 10Hz, the plasma flow of nitrogen is 5sccm, and RF activation power is 500W, and using superlaser the condition of ceramics GaN targets is bombarded Lower growth 500nm GaN nano column arrays.GaN film on strontium aluminate tantalum lanthanum substrate manufactured in the present embodiment has extraordinary Optical property, test data is close with embodiment 1, will not be described here.
Above-described embodiment is the present invention preferably embodiment, but embodiments of the present invention not by above-described embodiment Limit, other any Spirit Essences without departing from the present invention and the change, modification, replacement made under principle, combine, simplification, Equivalent substitute mode is should be, is included within protection scope of the present invention.

Claims (10)

1. the GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate, it is characterised in that：Including strontium aluminate tantalum lanthanum substrate, it is grown in GaN nano-pillar template layers on strontium aluminate tantalum lanthanum substrate, the GaN nano column arrays being grown on GaN nano-pillar template layers.
2. the GaN nano-pillars being grown according to claim 1 on strontium aluminate tantalum lanthanum substrate, it is characterised in that：The aluminic acid Strontium tantalum lanthanum substrate is La0.3Sr1.7AlTaO6Substrate is with (111) face 0.5～1 ° of (100) direction partially as epitaxial surface；Crystalline epitaxial takes It is to relation：(0001) face of GaN is parallel to La0.3Sr1.7AlTaO6(111) face of substrate.
3. the GaN nano-pillars being grown according to claim 1 on strontium aluminate tantalum lanthanum substrate, it is characterised in that：The GaN receives (0001) face of GaN is La parallel to strontium aluminate tantalum lanthanum substrate in rice column template layer0.3Sr1.7AlTaO6(111) face of substrate.
4. the GaN nano-pillars being grown according to claim 1 on strontium aluminate tantalum lanthanum substrate, it is characterised in that：The GaN receives Rice column template layer is nano column array, and the thickness of GaN nano-pillar template layers is 0.3～4 μm；The nano-pillar of the template layer it is flat A diameter of 200～500nm, the average headway between nano-pillar is 450～600nm.
5. the GaN nano-pillars being grown according to claim 1 on strontium aluminate tantalum lanthanum substrate, it is characterised in that：The GaN receives The thickness of nano-pillar is 0.2～2 μm in rice post array.
6. the GaN nano-pillars being grown according to claim 1 on strontium aluminate tantalum lanthanum substrate, it is characterised in that：The growth GaN nano-pillars on strontium aluminate tantalum lanthanum substrate also include separation layer, and the isolation is deposited upon not by GaN nano-pillar template layers On the substrate of covering or GaN nano-pillar template layers side wall and by GaN nano-pillars template layer cover substrate on.
7. the GaN nano-pillars being grown according to claim 6 on strontium aluminate tantalum lanthanum substrate, it is characterised in that：The isolation The material of layer is SiNx；The thickness of the separation layer is 30～200nm.
8. the preparation method of the GaN nano-pillars being grown according to any one of claim 1～7 on strontium aluminate tantalum lanthanum substrate, It is characterized in that：Comprise the following steps：
(1) selection of substrate and its crystal orientation：Using La0.3Sr1.7AlTaO6Substrate, with (111) face 0.5～1 ° of (100) direction partially For epitaxial surface, crystalline epitaxial orientation relationship is：(0001) face of GaN is parallel to La0.3Sr1.7AlTaO6(111) face of substrate；
(2) substrate surface polishing, cleaning and annealing：Substrate annealing process：Place the substrate into annealing indoor, 800～ To La at 900 DEG C0.3Sr1.7AlTaO6Substrate carries out 0.5～1h of annealing；
(3) the prefabricated layer epitaxially growns of GaN：Underlayer temperature control at 450～550 DEG C, reative cell pressure be 5.0～8.0 × 10-9Pa, substrate rotating speed is 5～10r/min, and target-substrate distance is 50～80mm, while optical maser wavelength is in pulsed laser deposition (PLD) 248nm, laser energy is 220～280mJ/cm2, 10～30Hz of frequency, the plasma flow of nitrogen is 3～10sccm, and RF lives Change power is 200～500W, the use of grow GaN cushions under conditions of superlaser bombardment ceramics GaN targets is GaN preformed layers； The thickness of the GaN preformed layers is 0.3～4 μm；
(4) preparation of GaN nano-pillars template layer：By using TracePro Software for Design and optimizing the arrangement of nano-pillar, then profit GaN preformed layers are etched into into GaN nano-pillar template layers with ICP lithographic techniques, the average diameter of the nano-pillar of template layer is 200～ 500nm, the average headway between nano-pillar is in 450～600nm；The thickness of the GaN nano-pillars template layer is 0.3～4 μm；
(5) preparation of separation layer：Do not covered by the nano-pillar of template layer in GaN nano-pillars template layer and using PECVD technique Layer deposited isolating on substrate, then etch away the separation layer above the nano-pillar of template layer, stay GaN nano-pillar template layers side wall and The separation layer on substrate not covered by the nano-pillar of template layer, to prevent GaN particles to be deposited on interstitial site；The thickness of separation layer Spend for 30～200nm；
(6) preparation of GaN nano column arrays：At 700～900 DEG C, substrate rotating speed is 5～10r/min, target base for underlayer temperature control Away from for 50～80mm, while optical maser wavelength is 248nm in PLD, laser energy is 220～340mJ/cm2, 10～30Hz of frequency, The plasma flow of nitrogen is 3～10sccm, and RF activation power is 200～500W, and using superlaser ceramics GaN targets are bombarded Under the conditions of on GaN nano-pillar template layers grow GaN nano column arrays；The thickness of nano-pillar is in the GaN nano column arrays 0.2～2 μm.
9. the preparation method of the GaN nano-pillars being grown according to claim 8 on strontium aluminate tantalum lanthanum substrate, its feature exists In：The substrate surface polishing is referred to La0.3Sr1.7AlTaO6Substrate surface diamond mud is polished, and coordinates optics Micro- sem observation substrate surface, after without cut, then is processed by shot blasting using the method for chemically-mechanicapolish polishing；
Substrate cleaning is referred to La0.3Sr1.7AlTaO6Substrate toluene, acetone, ethanol carry out standard ultrasound and clean to substrate respectively Each 10min, deionized water rinses 10min repeatedly, afterwards with V (H2SO4)∶V(H2O2)∶V(H2O mixed liquid dipping)=4: 1: 1 10min removes surface organic matter to remove surface residue and oxide layer, then after deionized water is cleaned up repeatedly, finally uses High-purity drying nitrogen is dried up.
10. the application of the GaN nano-pillars being grown according to any one of claim 1～7 on strontium aluminate tantalum lanthanum substrate, it is special Levy and be：The GaN nano-pillars being grown on strontium aluminate tantalum lanthanum substrate are used to prepare LED, photodetector and solar-electricity Pond.
CN201610940455.0A 2016-10-31 2016-10-31 GaN nanorod grown on strontium tantalum lanthanum aluminate substrate and preparation method and application thereof Pending CN106653966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610940455.0A CN106653966A (en) 2016-10-31 2016-10-31 GaN nanorod grown on strontium tantalum lanthanum aluminate substrate and preparation method and application thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610940455.0A CN106653966A (en) 2016-10-31 2016-10-31 GaN nanorod grown on strontium tantalum lanthanum aluminate substrate and preparation method and application thereof

Publications (1)

Publication Number Publication Date
CN106653966A true CN106653966A (en) 2017-05-10

Family

ID=58820469

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610940455.0A Pending CN106653966A (en) 2016-10-31 2016-10-31 GaN nanorod grown on strontium tantalum lanthanum aluminate substrate and preparation method and application thereof

Country Status (1)

Country Link
CN (1) CN106653966A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107628637A (en) * 2017-08-14 2018-01-26 南京大学 A kind of method for preparing III oxide and nitride nano post

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090146142A1 (en) * 2007-12-05 2009-06-11 Samsung Electronics Co., Ltd Light-emitting device including nanorod and method of manufacturing the same
CN102456786A (en) * 2010-10-29 2012-05-16 鸿富锦精密工业（深圳）有限公司 LED (light emitting diode) and manufacturing method thereof
CN102610715A (en) * 2012-03-31 2012-07-25 中国科学院半导体研究所 Method for producing nano fluorescent powder-free gallium nitride white light-emitting diode
CN103296158A (en) * 2013-05-31 2013-09-11 华南理工大学 Doped GaN film growing on La0.3Sr1.7AlTaO6 substrate and manufacturing method of doped GaN film
CN103383980A (en) * 2013-06-25 2013-11-06 南京大学 Method for preparing orderly gallium nitride nano pillar array with ultraviolet soft imprinting
CN206116446U (en) * 2016-10-31 2017-04-19 华南理工大学 GaN nanometer post of growth on aluminic acid strontium tantalum lanthanum substrate

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090146142A1 (en) * 2007-12-05 2009-06-11 Samsung Electronics Co., Ltd Light-emitting device including nanorod and method of manufacturing the same
CN102456786A (en) * 2010-10-29 2012-05-16 鸿富锦精密工业（深圳）有限公司 LED (light emitting diode) and manufacturing method thereof
CN102610715A (en) * 2012-03-31 2012-07-25 中国科学院半导体研究所 Method for producing nano fluorescent powder-free gallium nitride white light-emitting diode
CN103296158A (en) * 2013-05-31 2013-09-11 华南理工大学 Doped GaN film growing on La0.3Sr1.7AlTaO6 substrate and manufacturing method of doped GaN film
CN103383980A (en) * 2013-06-25 2013-11-06 南京大学 Method for preparing orderly gallium nitride nano pillar array with ultraviolet soft imprinting
CN206116446U (en) * 2016-10-31 2017-04-19 华南理工大学 GaN nanometer post of growth on aluminic acid strontium tantalum lanthanum substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107628637A (en) * 2017-08-14 2018-01-26 南京大学 A kind of method for preparing III oxide and nitride nano post

Similar Documents

Publication Publication Date Title
CN102945898B (en) Growth AlN film on metal A g substrate and preparation method thereof, application
KR101040956B1 (en) Thin Film Si solar cell using ZnO nanowire and Fabrication Method Thereof
CN102945899B (en) Growth GaN monocrystal thin films on metal A g substrate and preparation method thereof, application
CN103022295B (en) Aluminum nitride film growing on silicon substrate and preparation method and application thereof
CN106981423B (en) Process based on Si substrate epitaxial SiC base GaN HEMT
CN105576096B (en) A kind of preparation method of the LED epitaxial wafer grown on a si substrate using SiN insert layers
CN103996605B (en) A kind of pulsed laser deposition and molecular beam epitaxy combination filming equipment and application thereof
CN103996606A (en) High-uniformity AlN film growing on sapphire substrate and preparing method and application of high-uniformity AlN film
JP2009105130A (en) Manufacturing method of photoelectromotive element
CN206116446U (en) GaN nanometer post of growth on aluminic acid strontium tantalum lanthanum substrate
CN103996610B (en) AlN thin film growing on metal aluminum substrate and preparing method and application thereof
CN103996611B (en) GaN thin film growing on metal Al substrate and preparing method and application thereof
CN106384762A (en) Nano-pillar LED grown on strontium tantalum lanthanum aluminate substrate and preparation method thereof
CN103996764B (en) LED epitaxial wafer growing on Ag substrate and preparing method and application of LED epitaxial wafer
CN106328774A (en) Epitaxial growth method and application of GaN film
CN106653966A (en) GaN nanorod grown on strontium tantalum lanthanum aluminate substrate and preparation method and application thereof
CN103996756B (en) Film coating method and application thereof
US20100093126A1 (en) Method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization
CN106505135B (en) The InGaN/GaN multiple quantum wells and preparation method thereof of growth on a glass substrate
US20140213044A1 (en) Method for producing periodic crystalline silicon nanostructures
CN100435279C (en) Method for fabricating large area, self-supporting semiconductor material with wide forbidden band
CN106158592A (en) GaN film being grown on magnesium aluminate scandium substrate and its preparation method and application
CN101388345B (en) Process for growing ZnO thin-film on metal substrate
CN206225393U (en) It is grown in the nano-pillar LED on strontium aluminate tantalum lanthanum substrate
CN105742424B (en) A kind of GaN film and preparation method thereof of the epitaxial growth on metal Al substrates

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20170510

RJ01 Rejection of invention patent application after publication