CN106653786A - 具有改进的相位检测像素的bsi cmos图像传感器 - Google Patents

具有改进的相位检测像素的bsi cmos图像传感器 Download PDF

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CN106653786A
CN106653786A CN201610965001.9A CN201610965001A CN106653786A CN 106653786 A CN106653786 A CN 106653786A CN 201610965001 A CN201610965001 A CN 201610965001A CN 106653786 A CN106653786 A CN 106653786A
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刘家颖
彭进宝
熊志伟
威尼斯·文森特
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Omnivision Technologies Inc
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Abstract

改进的背照式(BSI)互补金属氧化物半导体(CMOS)图像传感器和相关联的方法改进相位检测能力。BSI CMOS图像传感器具有包括相位检测像素(PDP)、由埋藏式滤色镜阵列和复合金属/氧化物格栅形成的复合格栅、和对应PDP的光电二极管植入的像素阵列。PDP掩膜被与邻近PDP的深槽隔离(DTI)结构一起制造，并被布置为掩盖光电二极管植入的至少部分，使得PDP掩膜被布置于复合格栅和光电二极管植入之间。

Description

具有改进的相位检测像素的BSI CMOS图像传感器
技术领域
本公开涉及图像传感器技术领域，尤其涉及一种具有改进的相位检测像素的BSICMOS图像传感器。
背景技术
背照式(BSI)互补金属氧化物半导体(CMOS)图像传感器上的相位检测像素(PDP)对改进照相机中的聚焦是有用的。成对的像素被掩盖，使得其仅检测来自物镜的一个或另一个边缘的光。成对的互补PDP布置于传感器上，以允许照相机确定在当前位置是如何异相接收光的，由此确定将图像聚焦于传感器上所需的透镜聚焦调整。
当形成还包括埋藏式滤色镜阵列(BCFA)的复合格栅(金属上的氧化物)层的金属格栅时，对于每个PDP，传统的具有PDP的BSI COMS图像传感器的制造形成PDP掩膜。因此，PDP掩膜还被布置于复合格栅内。
相比于带有BCFA制造的BSI CMOS图像传感器，使用复合格栅制造的BSI CMOS图像传感器可以获得更高的量子效率(QE)；然而，由于PDP掩膜上的附加的氧化物，相位检测能力退化。
发明内容
在一个实施例中，背照式(BSI)互补金属氧化物半导体(CMOS)图像传感器具有包括相位检测像素(PDP)、由埋藏式滤色镜阵列和复合金属/氧化物格栅形成的复合格栅、和对应PDP的光电二极管植入的像素阵列。PDP掩膜被与邻近PDP的深槽隔离(DTI)结构同时地制造，并被布置为掩盖光电二极管植入的至少部分，使得PDP掩膜由与DTI结构相同的材料制造，并被布置于复合格栅和光电二极管植入之间。
在另一个实施例中，方法制造具有包括相位检测像素(PDP)的像素阵列的类型的背照式(BSI)互补金属氧化物半导体(CMOS)图像传感器。用于PDP的PDP掩膜被与邻近PDP的深槽隔离(DTI)结构连同地制造，并由相同的连续材料形成。PDP掩膜被完全地布置于(a)具有埋藏式滤色镜阵列和复合金属/氧化物格栅的复合格栅和(b)对应PDP的光电二极管植入之间。
在另一个实施例中，方法改进背照式(BSI)互补金属氧化物半导体(CMOS)图像传感器中的相位检测像素(PDP)的相位检测能力。PDP的PDP掩膜被与BSI CMOS图像传感器的深槽隔离结构同时地、使用相同的材料制造，使得PDP掩膜被布置于BSI CMOS图像传感器的复合格栅和光电二极管植入之间。PDP掩膜的布置提高PDP的量子效率(QE)和灵敏度。
附图说明
图1示出具有相位检测像素(PDP)的背照式(BSI)互补金属氧化物半导体(CMOS)图像传感器的像素图案。
图2是示出图1的PDP的示例性操作以检测来自物镜的不同侧面的光的示意图。
图3是示出现有技术的PDP的示例性结构的现有技术的BSI CMOS图像传感器的部分的剖面。
图4示出一个实施例中将PDP掩膜与埋藏式钨(W)DTI结构结合以改进像素量子效率和PDP灵敏度的一个示例性BSI CMOS图像传感器。
图5示出将PDP掩膜与埋藏式钨(W)DTI结构结合使得PDP掩膜被布置于图像传感器的大体平坦的介电层内的一个示例性BSI CMOS图像传感器。
图6示出具有由氧化物、绿色滤光镜和形成由氧化物覆盖的PDP掩膜的金属格栅形成的复合格栅的第一PDP结构。
图7示出具有由氧化物、绿色滤光镜和形成PDP掩膜的金属格栅形成的复合格栅的第二PDP结构，其中绿色滤光镜延伸至PDP掩膜上。
图8是示出使用400nm-650nm的白光，来自图6和7的PDP结构的每个的模拟的相位检测结果的曲线图。
具体实施方式
图1示出具有多个像素102(每个具有滤色镜和透镜)的背照式(BSI)互补金属氧化物半导体(CMOS)图像传感器100的像素模式，其中，两个像素分别被配置有右相位检测像素(PDP)掩膜104和左PDP掩膜10 6以操作为PDP 108和110。图2是示出图1的PDP 108的示例性操作以检测来自物镜202的第一侧面204的光和PDP 110的示例性操作以检测来自物镜202的第二侧面206的光的示意图。相位检测像素108、110可以被用于照相机内以通过对于正在被捕捉的目标的焦点检测相位的差异，提高自动聚焦。照相机调整焦点以对准来自PDP 108和110的检测的相位。
图3是示出现有技术的PDP 302的结构的现有技术的BSI CMOS图像传感器300的部分的剖面。BSI CMOS图像传感器300由包括埋藏式滤色镜阵列(BCFA)(示出为红色滤光镜306、绿色滤光镜308和蓝色滤光镜310)的复合格栅303形成，BCFA与金属格栅314和PDP掩膜304和氧化物(或镧系元素(LN))格栅312相结合。BSI CMOS图像传感器300还被示为具有N型光电二极管植入316(1)-(3)、深槽隔离(DTI)结构318(1)-(4)、浅槽隔离(STI)结构320(1)-(4)、多晶硅栅324(1)-(4)、介电层319、P+层322(1)-(3)以及金属1层326。现有技术中，DTI结构318典型地由氧化物和/或无掺杂的多晶硅材料制造。
红色滤光镜306和蓝色滤光镜310是尺寸相似的。然而，由于PDP掩膜304，绿色滤光镜更小。这引进问题，由光线305示出，其中氧化物或LN格栅312干扰以特定的角度进入的光，并与绿色滤光镜308的边缘形成反射界面。以特定的其它角度进入的光还可以穿过滤光镜的减小的厚度，减小颜色灵敏度。进一步地，由于PDP 302的绿色滤光镜308小于BSI CMOS图像传感器300的其它绿色滤光镜，复合格栅303的制造是复杂的。
图4示出将PDP掩膜404与埋藏式钨(W)DTI结构418(2)相结合以改进像素量子效率(QE)和PDP灵敏度的一个示例性BSI CMOS图像传感器400。BSI CMOS图像传感器400相似于图3的BSI CMOS图像传感器300，并由包括埋藏式滤色镜阵列(BCFA)(示为红色滤光镜406、绿色滤光镜408和蓝色滤光镜410)的复合格栅403形成，BCFA与金属格栅414和氧化物(或LN)格栅412相结合。BSI CMOS图像传感器400还被示出具有N型光电二极管植入416(1)-(3)、深槽隔离(DTI)结构418(1)-(4)、浅槽隔离(STI)结构420(1)-(4)、多晶硅栅424(1)-(4)、介电层419、P+层422(1)-(3)和金属1层426。
在BSI CMOS图像传感器400中，由于PDP掩膜404没有被包括在复合格栅403内，且因此对于像素的光进入区域，不干扰与复合格栅部件的侧面边缘交互的光，从而像素量子效率(QE)和PDP灵敏度被提高。由于滤色镜406、408和410是相同的尺寸，比较于图3的BSICMOS图像传感器300，BCFA的制造更简单。
如图4中所示，在BSI CMOS图像传感器400的制造期间，PDP掩膜404与DTI结构418同时地形成，使得DTI结构418(2)和PDP掩膜404是连续的。DTI 408且因此PDP 404可以由钨(W)或其它材料形成。现有技术中，在金属格栅314的制造期间发生PDP掩膜304的制造。
图5示出相似于图4的BSI CMOS图像传感器400的将PDP掩膜504与埋藏式钨(W)DTI结构518(2)相结合使得PDP掩膜504被布置于大体平坦的介电层519内的一个示例性BSICMOS图像传感器500。BSI CMOS图像传感器500相似于图4的BSI CMOS图像传感器400，并由包括埋藏式滤色镜阵列(BCFA)(示为红色滤光镜506、绿色滤光镜508和蓝色滤光镜510)的复合格栅503形成，BCFA与金属格栅514和氧化物(或LN)格栅512相结合。BSI CMOS图像传感器500还被示出为具有N型光电二极管植入516(1)-(3)、深槽隔离(DTI)结构518(1)-(4)、浅槽隔离(STI)结构520(1)-(4)、多晶硅栅524(1)-(4)、介电层519、P+层522(1)-(3)和金属1层526。
如图5中所示，在BSI CMOS图像传感器500的制造期间，PDP掩膜504与DTI结构518同时地形成，使得DTI结构518(2)和PDP掩膜504是连续的。DTI 508且因此PDP 504可以由钨(W)或其它材料形成。
在BSI CMOS图像传感器500中，由于PDP掩膜504完全形成于介电层519内，介电层519和N型光电二极管植入516之间的边界550是大体上平坦的，且介电层519和复合格栅503之间的边界552也是大体上平坦的，从而相比于图4的BSI CMOS图像传感器400，像素量子效率(QE)和PDP灵敏度进一步被提高。
正如BSI CMOS图像传感器400，相比于图3的现有技术的BSI CMOS图像传感器300的，因为PDP掩膜504从复合格栅503移除，且因此对于像素的光进入区域，不干扰与复合格栅部件的侧面边缘交互的光，因此BSI CMOS图像传感器500的像素量子效率(QE)和PDP灵敏度被提高。进一步地，由于所有的滤色镜506、508和510是相同的尺寸，因此相比于现有技术的BSI CMOS图像传感器300的制造，BSI CMOS图像传感器500的制造被简化。
图6示出具有由氧化物612、绿色滤光器608和形成被氧化物612覆盖的PDP掩膜604的金属格栅614形成的复合格栅的第一PDP结构600。此复合格栅在透镜601和光电二极管616之间。复合格栅的制造要求氧化物层和金属格栅层被刻蚀有一个掩膜。因此，如图6的结构600中所示，氧化物612被形成于PDP掩膜604上。第一PDP结构600相似于图3的现有技术的PDP 302，其中，相比于BSI CMOS图像传感器300的其它滤光镜，绿色滤光镜604在尺寸被减小。图7示出具有由氧化物712、绿色滤光镜708和形成PDP掩膜704的金属格栅形成的复合格栅的第二PDP结构700，其中绿色滤光镜708在PDP掩膜704上延伸光电二极管716的全宽，且在PDP掩膜704上没有形成氧化物层。
图8是示出使用400nm-650nm的白光，分别来自图6和7的PDP结构的每个的模拟的相位检测结果的曲线图800。
曲线图800上，线802表示对于具有PDP掩膜的BCFA的响应水平。如曲线图800中所示，对于线802的最大/中心的比为：
0.575/0.427＝1.34
其中，PD信号/正常G＝0.31
其中，PD信号表示具有PDP掩膜的像素的信号水平，且正常G表示没有PDP掩膜且具有绿色滤光镜的像素的信号水平。
曲线图800上，线804表示对于图6的结构600(PDP掩膜上有复合物)的响应水平。如曲线图800中所示，对于线804的最大/中心的比为0.628/0.547＝1.14，其中，PD信号/正常G＝0.38。
曲线图800上，线806表示对于图7的结构700(PDP掩膜上无复合物)的响应水平。如曲线图800中所示，对于线806的最大/中心的比为0.61/0.44＝1.38，其中，PD信号/正常G＝0.31。
如所示，通过将PDP掩膜504与W填满的DTI结构518(2)相结合使得复合格栅503(具有金属格栅514和氧化物格栅512和BCFA)不被PDP掩膜中断，相比于图3的现有技术的PDP302，PDP 502具有更高的QE和灵敏度。
如图8的曲线图800中所示，比较“PDP掩膜上有复合物”线804和BCFA线802，示出结构600的相位检测能力是弱的。通过移除金属上的氧化物，如图7的结构700中所示(其中滤光镜708延伸至掩膜704上)，结构700的相位检测能力被提高回至1.36，如当“PDP掩膜上无复合物”线806与BCFA线802相比较时所示出。
通过形成具有DTI 518的PDP掩膜504，由于复合格栅503被形成为具有单个掩膜，BSI CMOS图像传感器500的制造被简化，且相比于BSI CMOS图像传感器300的PDP 302(图3)，PDP 502的QE被提高。
在不脱离其范围的情况下，可以对上述系统和方法做出改变。因此，应该注意的是，在上述描述中包含的或在附图中示出的方式，应该被理解为说明性的且不具有限制意义。所附权利要求旨在覆盖在此描述的所有通用和特定特征，以及本方法和本系统的范围的在语言上的所有声明应被认为落入其间。

Claims (12)

1.一种背照式BSI互补金属氧化物半导体CMOS图像传感器，具有包括相位检测像素PDP、由埋藏式滤色镜阵列和复合金属/氧化物格栅形成的复合格栅、和对应所述PDP的光电二极管植入的像素阵列，所述BSI CMOS图像传感器包括：
PDP掩膜，与邻近所述PDP的深槽隔离DTI结构同时地被制造，并被布置为掩盖所述光电二极管植入的至少部分；
其中，所述PDP掩膜由与所述DTI结构相同的材料制造，且被布置于所述复合格栅和所述光电二极管植入之间。
2.如权利要求1所述的BSI CMOS图像传感器，其中所述PDP掩膜和所述DTI结构是连续的。
3.如权利要求1所述的BSI CMOS图像传感器，其中，相比于具有由复合格栅的金属格栅形成的掩膜的相位检测像素，所述PDP的量子效率QE和灵敏度被提高。
4.如权利要求1所述的BSI CMOS图像传感器，其中，对应所述PDP的所述滤色镜的尺寸与对应其它像素的滤色镜的尺寸大体上相同。
5.如权利要求1所述的BSI CMOS图像传感器，其中，所述PDP掩膜被布置于形成在所述复合格栅和所述光电二极管植入之间的介电层内，使得形成在所述介电层和所述光电二极管植入之间的边界是大体上平坦的。
6.如权利要求1所述的BSI CMOS图像传感器，其中，所述PDP掩膜被布置于形成在所述复合格栅和所述光电二极管植入之间的介电层内，使得形成在所述介电层和所述复合格栅之间的边界是大体上平坦的。
7.如权利要求1所述的BSI CMOS图像传感器，其中，所述PDP掩膜和所述DTI结构由金属形成。
8.如权利要求1所述的BSI CMOS图像传感器，其中所述PDP掩膜和所述DTI结构由钨形成。
9.一种用于制造具有包括相位检测像素PDP的像素阵列的类型的背照式BSI互补金属氧化物半导体CMOS图像传感器的方法，包括步骤：
对于所述PDP，与邻近所述PDP的深槽隔离DTI结构连同地制造PDP掩膜，所述PDP掩膜和所述DTI结构由相同的连续材料形成；
其中，所述PDP掩膜被完全地布置于(a)具有掩埋的滤色镜阵列和复合金属/氧化物格栅的复合格栅和(b)对应所述PDP的光电二极管植入之间。
10.如权利要求9所述的方法，所述制造的步骤包括将所述PDP掩膜和所述DTI结构制造为连续的。
11.如权利要求9所述的方法，还包括将所述PDP掩膜制造为完全在所述BSI CMOS图像传感器的介电层内。
12.一种用于改进背照式BSI互补金属氧化物半导体CMOS图像传感器中的相位检测像素PDP的相位检测能力的方法，包括步骤：
与所述BSI CMOS图像传感器的深槽隔离结构同时地、使用相同的材料制造所述PDP的PDP掩膜，使得所述PDP掩盖被布置于所述BSI CMOS图像传感器的复合格栅和光电二极管植入之间；
其中，所述PDP掩膜的布置改进所述PDP的量子效率QE和灵敏度。
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