CN106653721A - Convex point structure for surrounding sealing ring and formation method for convex point structure - Google Patents
Convex point structure for surrounding sealing ring and formation method for convex point structure Download PDFInfo
- Publication number
- CN106653721A CN106653721A CN201611052564.5A CN201611052564A CN106653721A CN 106653721 A CN106653721 A CN 106653721A CN 201611052564 A CN201611052564 A CN 201611052564A CN 106653721 A CN106653721 A CN 106653721A
- Authority
- CN
- China
- Prior art keywords
- sealing ring
- salient point
- layer
- bump structure
- convex point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/11011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
- H01L2224/11013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the bump connector, e.g. solder flow barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/11011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
- H01L2224/11019—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for protecting parts during the process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/1354—Coating
- H01L2224/13599—Material
- H01L2224/1369—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
Abstract
The invention discloses a convex point structure for surrounding a sealing ring and a formation method for the convex point structure. The convex point structure comprises a chip, wherein the chip has a first surface and a second surface which is arranged opposite to the first surface; the first surface has at least one electrode region; the first surface or the second surface is provided with at least one metal layer; the metal layer is provided with a solder mask layer; a conductive bonding pad for exposing the metal layer is arranged on the solder mask layer; a polymer binder and a convex point are arranged on the conductive bonding pad; the polymer binder forms the sealing ring with a 3-D polymer network structure after reflux; and the sealing ring coats the root part of the convex point on the solder mask layer. By virtue of the sealing ring, the binding force between the convex point and the conductive bonding pad, the thrust strength is greatly improved, high rework property is realized, reliability connection of single convex points is optimized, technological steps of the manufacture procedure also can be reduced, the technological cost is lowered, and requirements of high-reliability products of vehicle mounting, security and protection and the like are satisfied.
Description
Technical field
The present invention relates to technical field of semiconductor encapsulation, more particularly to a kind of bump structure and formation side around sealing ring
Method.
Background technology
In the method for prior art manufacture solder bump, most commonly in conductive welding disk position print solder paste and plant ball
Method, then first print fluxing is arranged on formed soldered ball on scaling powder to conductive welding disk in ball processing procedure is planted, and passes through
Solder balls are combined closely with conductive welding disk and realize being electrically connected with, and finally remove scaling powder.The shortcoming of this method is：
(1) salient point is also easy to produce crotch phenomenon, causes to be interconnected between two adjacent independent salient points and is short-circuited；Need in welding process
Scaling powder is used, in order to not affect salient point electric conductivity after having welded, in addition it is also necessary to carry out cleaning scaling powder, complex process, cost
It is higher；
(2) in welding process due to flux activity not enough, easily cause the problems such as oven temperature profile welding cavity, rosin joint and
The problems such as IMC (Intermetallic Compound) layer is blocked up.
(3) need to use underfill after the chip after the completion of encapsulating and circuit board or the welding of next stage package substrate,
In addition it is also easy to solder joint fracture and pillow phenomenon occur, it is impossible to meet the high authenticity product requirement such as vehicle-mounted, security protection；
Therefore, it is to improve techniques described above problem, needs to develop new soldered ball formation scheme, realizes salient point with conductive weldering
The effectively connection of disk, improves welding spot reliability.
The content of the invention
In order to solve above-mentioned technical problem, the present invention proposes a kind of bump structure and forming method around sealing ring, base
One or more problems caused by the limitation and shortcoming of prior art are avoided in sheet.
The technical scheme is that what is be achieved in that：
A kind of bump structure around sealing ring, including a chip, the chip has first surface and corresponding thereto
Second surface, the first surface has an at least electrode zone, and the first surface or the second surface are provided with least one
Layer metal level, the metal level is provided with one layer of welding resisting layer, and the conductive welding disk for exposing the metal level is offered on the welding resisting layer,
Polymer adhesive and salient point are disposed with the conductive welding disk, bag is formed on welding resisting layer after the polymer adhesive backflow
Wrap up in the sealing ring in the salient point foundation portion.
Further, the viscosity of the polymeric adhesive material is 60CP to 40000CP.
Further, the polymer adhesive is a kind of unleaded salient point adhesive.
Further, the salient point is the one kind in solid soldered ball, hollow soldered ball, plastics core soldered ball, copper core soldered ball.
Further, the salient point is electrically connected with by metal level with electrode zone.
Further, the sealing ring is the Polymer Tie-layer with 3-D polymer network structures.
A kind of forming method of the bump structure around sealing ring, comprises the steps：
(1) wafer with some chips is provided, the wafer has first surface and second surface corresponding thereto,
The first surface has some independent electrode zones；
(2) at least one of which metal level is formed in wafer first surface；
(3) one layer of welding resisting layer is formed on the metal layer, the conductive welding disk of expose metal layer is opened up on the welding resisting layer；
(4) printed by steel mesh in wafer first surface or point gum machine dispensing arranges polymerization in the position of correspondence conductive welding disk
Thing adhesive；
(5) formed salient point is printed on the polymer adhesive to conductive welding disk；
(6) flow back；
(7) whole piece wafer is cut into single chip product.
Further, the polymer adhesive removes salient point or/and the metal oxygen on conductive welding disk in reflux course
Change layer, play a part of to help weldering.
Further, the polymer adhesive forms the sealing with 3-D polymer network structures in reflux course
Ring.
The invention has the beneficial effects as follows：The present invention provides a kind of bump structure and forming method around sealing ring, adopts
Polymer adhesive replaces common scaling powder to carry out the formation of salient point, the advantage of this technical scheme:
(1) after polymer adhesive backflow, the electric conductivity of salient point and the external world is not affected, it is similar clear without the need for carrying out other again
The step of washing scaling powder.
(2) use of polymer adhesive can effectively reduce welding cavity, rosin joint, IMC (Intermetallic
Compound the phenomenon such as blocked up) is grown.Crotch phenomenon is obviously improved between two adjacent independent salient points, it is to avoid salient point interconnection is caused
Chip remakes salient point or scraps causes yield to decline.
(3) formation of the sealing ring of 3-D polymer network structures, the thrust enhanced between salient point and conductive welding disk is strong
Degree, in the case of the conditions such as chip, thrust machine and its parameter are the same from, thrust test is carried out to salient point, is introduced polymer and is glued
The wafer of mixture compares the wafer with common scaling powder, and thrust strength increase by 30% is highly reliable so as to meet vehicle-mounted, security protection etc.
Property product requirement.
(4) salient point ruptures and pillow phenomenon after the chip after the completion of encapsulating is welded with circuit board or next stage package substrate
Be obviously improved, salient point continuously by chip together with circuit board or next stage package substrate effectively connection, without the need for entering again in addition
The filling of row underfill material, the polymer adhesive is combined scaling powder with the effect of underfill material, can reduce fabrication steps, greatly
Amplitude reduction process costs.
(5) for technological parameter, the salient point that artificial or apparatus factor is caused exceeds the phenomenon of specification, and such as salient point is interconnected,
Salient point homogeneity is poor, and salient point seriously needs to remake salient point, i.e. heavy industry beyond anomalies such as conductive welding disks, and this polymer glues
Mixture can thoroughly be eliminated, and clean conductive welding disk is presented, and facilitate second effective operation.
Description of the drawings
Fig. 1 is wafer schematic diagram in the embodiment of the present invention；
Fig. 2 is the schematic diagram that metal level is made in the embodiment of the present invention；
Welding resisting layer is made in Fig. 3 embodiment of the present invention and form the schematic diagram of conductive welding disk；
The schematic diagram of coated polymeric adhesive in Fig. 4 embodiment of the present invention；
The bump structure schematic diagram around sealing ring is formed in Fig. 5 embodiment of the present invention；
Wherein, symbol is simply described as follows in accompanying drawing：
100- wafers, 101- wafer first surfaces, 102- wafer second surfaces, 200- metal levels, 300- welding resisting layers, 400-
Conductive welding disk, 500- polymer adhesives, 501- sealing rings, 600- salient points.
Specific embodiment
In order to be more clearly understood that the technology contents of the present invention, describe in detail especially exemplified by following examples, its purpose is only
It is to be best understood from present disclosure rather than limit the scope of the invention.Each part in the structure of embodiment accompanying drawing
Do not scale by normal rates, therefore do not represent the actual relative size of each structure in embodiment.Wherein described structure or face it is upper
Face or upside, the situation comprising middle also other layers.
It is an including the chip 100 present invention introduces bump structure formed after polymer adhesive referring to Fig. 5, the core
Piece has first surface 101 and second surface corresponding thereto 102, and the first surface has an at least electrode zone, described
Electrode zone is not shown, and the first surface or second surface are provided with least one of which metal level 200, and the metal level is provided with one
Layer welding resisting layer 300, offers the conductive welding disk 400 of expose metal layer on the welding resisting layer, be disposed with the conductive welding disk poly-
Compound adhesive 500 and salient point 600, the polymer adhesive forms upon reflowing the sealing with 3-D polymer network structures
Ring, the sealing ring wraps up the salient point foundation portion on welding resisting layer.
The chip can be active component (active element) or passive element (passive element), number
The electronic component (electronic components) of the integrated circuit such as word circuit or analog circuit, MEMS (Micro
Electro Mechanical Systems, MEMS), microfluid system (micro fluidic systems) or using heat,
The physical quantity variation such as light and pressure is come the physics sensor (physical sensor), surface acoustic wave element, the feeling of stress that measure
Device (pressure sensors) is surveyed, but is not limited.
Polymer on conductive welding disk 400, conductive welding disk in welding resisting layer 300, welding resisting layer on the metal level 200, metal level
Salient point 600 can be produced on first surface of the chip 100 with electrode zone on adhesive 500 and polymer adhesive, also may be used
To be produced on the second surface back to first surface, electrode zone is not shown, and the metal level 200 electrically connects with electrode zone
Connect, the salient point 600 is electrically connected with by metal level 200 and electrode zone, wherein, the relative position of salient point 600 and electrode zone
Put unrestricted, optionally, when salient point 600 is produced on wafer first surface 101, salient point 600 is formed in directly over electrode zone
Or around electrode zone；In wafer second surface 102, salient point is upside down in wafer second surface to stud bump making back to electrode zone
102。
In the present invention, the chip includes one or more layers circuit, and the circuit is insulating barrier or/and metal level,
Not shown in the present invention.
Below, a kind of forming method of the bump structure around sealing ring shown in Fig. 5 is described in detail：
Referring to Fig. 1, there is provided one has the wafer 100 of some chips, and the wafer has first surface 101 and corresponding thereto
Second surface 102, the first surface include an at least electrode zone；
Referring to Fig. 2, wafer first surface 101 or second surface 102 by electroplating process, physical vapour deposition (PVD) processing procedure or
Chemical vapor deposition process forms at least one of which metal level 200, and metal level 200 is a kind of in titanium, copper, nickel, tin, target, gold
Single layer structure or it is aforementioned in multiple combination into sandwich construction.
Referring to Fig. 3, one layer of welding resisting layer 300 is coated with by way of spin coating or spraying on metal level 200, and by exposure
The mode of development forms the conductive welding disk 400 of expose metal layer.In the present embodiment, welding resisting layer 300 may include epoxy resin, nothing
Machine material (for example, silica, silicon nitride, silicon oxynitride, metal oxide or aforesaid combination), high-molecular organic material (example
Such as, polyimide resin, polyamide, benzocyclobutene, Parylene) or other suitable insulating materials.
Referring to Fig. 4, polymer adhesive 500 is arranged by steel mesh printing or point gum machine dispensing in the top of conductive welding disk 400,
The viscosity scope of the polymer adhesive is 60CP to 40000CP, and is a kind of unleaded salient point adhesive, non-toxic, right
Human body is not injured.
Referring to Fig. 5, formed salient point 600 is printed on the polymer adhesive 500 to conductive welding disk, the salient point
600 can be the one kind in solid soldered ball, hollow soldered ball, plastics core soldered ball, copper core soldered ball, then, carry out in reflow soldering
Backflow, in reflux course, polymer adhesive 500 removes salient point or/and the metal oxide layer on conductive welding disk, reaches and helps weldering
Effect, without the need for being additionally coated with scaling powder again, meanwhile, polymer adhesive is shaped to the sealing ring of 3-D polymer network structures,
Spread from salient point foundation portion to salient point top, finally, 3-D polymer network structures form parcel on welding resisting layer after the completion of backflow
The sealing ring in salient point foundation portion, finally cuts into single chip by whole wafer.
In the present embodiment, can change poly- by adjusting the consumption and rework profile of the polymer adhesive 500
The height and width of compound adhesive coverage, the 3-D polymer network structures parcel of the backflow shaping of the polymer adhesive 500
The height in salient point foundation portion is 5 to 100 microns, and it is covered highly less than the bump height for being eventually formed in the conductive welding disk
Width on welding resisting layer is 10 to 200 microns.
If there is other structures that polymer adhesive can be made to replace scaling powder and underfill material to be formed on welding resisting layer and wrapped
The sealing ring in salient point foundation portion, falls within protection scope of the present invention.
Above example is referring to the drawings, to a preferred embodiment of the present invention will be described in detail.Those skilled in the art
In the case that member is by carrying out modification or change on various forms, but the essence without departing substantially from the present invention to above-described embodiment, all
Fall within the scope and spirit of the invention.
Claims (9)
1. a kind of bump structure around sealing ring, it is characterised in that：Including a chip, the chip have first surface and with
Its relative second surface, the first surface has an at least electrode zone, and the first surface or the second surface set
There is at least one of which metal level, the metal level is provided with one layer of welding resisting layer, offer on the welding resisting layer and expose the metal level
Conductive welding disk, is disposed with polymer adhesive and salient point, anti-welding after the polymer adhesive backflow on the conductive welding disk
The sealing ring in the parcel salient point foundation portion is formed on layer.
2. the bump structure around sealing ring according to claim 1, it is characterised in that：The polymeric adhesive material
Viscosity be 60CP to 40000CP.
3. the bump structure around sealing ring according to claim 1, it is characterised in that：The polymer adhesive is one
Plant unleaded salient point adhesive.
4. the bump structure around sealing ring according to claim 1, it is characterised in that：The salient point be solid soldered ball,
One kind in hollow soldered ball, plastics core soldered ball, copper core soldered ball.
5. according to claim 1 around the bump structure of sealing ring, it is characterised in that：The salient point is by metal level and electricity
Polar region domain is electrically connected with.
6. according to claim 1 around the bump structure of sealing ring, it is characterised in that：The sealing ring is poly- with 3-D
The Polymer Tie-layer of polymeric network structure.
7. a kind of forming method of the bump structure around sealing ring, it is characterised in that comprise the steps：
(1) wafer with some chips is provided, the wafer has first surface and second surface corresponding thereto, described
First surface has some independent electrode zones；
(2) at least one of which metal level is formed in wafer first surface；
(3) one layer of welding resisting layer is formed on the metal layer, the conductive welding disk of expose metal layer is opened up on the welding resisting layer；
(4) printed by steel mesh in wafer first surface or point gum machine dispensing arranges polymer and glues in the position of correspondence conductive welding disk
Mixture；
(5) formed salient point is printed on the polymer adhesive to conductive welding disk；
(6) flow back；
(7) whole piece wafer is cut into single chip product.
8. the forming method of the bump structure around sealing ring according to claim 7, it is characterised in that：The polymer
Adhesive removes salient point or/and the metal oxide layer on conductive welding disk in reflux course, plays a part of to help weldering.
9. the forming method of the bump structure around sealing ring according to claim 7, it is characterised in that：The polymer
Adhesive forms the sealing ring with 3-D polymer network structures in reflux course.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611052564.5A CN106653721A (en) | 2016-11-25 | 2016-11-25 | Convex point structure for surrounding sealing ring and formation method for convex point structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611052564.5A CN106653721A (en) | 2016-11-25 | 2016-11-25 | Convex point structure for surrounding sealing ring and formation method for convex point structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106653721A true CN106653721A (en) | 2017-05-10 |
Family
ID=58812674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611052564.5A Pending CN106653721A (en) | 2016-11-25 | 2016-11-25 | Convex point structure for surrounding sealing ring and formation method for convex point structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106653721A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040149479A1 (en) * | 2002-08-08 | 2004-08-05 | Tz-Cheng Chiu | Polymer-embedded solder bumps for reliable plastic package attachment |
| CN101733585A (en) * | 2010-02-10 | 2010-06-16 | 北京海斯迪克新材料有限公司 | Material for packaging bump protective layer of wafer-level chip |
| US20110230043A1 (en) * | 2010-03-17 | 2011-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tape residue-free bump area after wafer back grinding |
| CN206259345U (en) * | 2016-11-25 | 2017-06-16 | 华天科技（昆山）电子有限公司 | around the bump structure of sealing ring |
-
2016
- 2016-11-25 CN CN201611052564.5A patent/CN106653721A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040149479A1 (en) * | 2002-08-08 | 2004-08-05 | Tz-Cheng Chiu | Polymer-embedded solder bumps for reliable plastic package attachment |
| CN101733585A (en) * | 2010-02-10 | 2010-06-16 | 北京海斯迪克新材料有限公司 | Material for packaging bump protective layer of wafer-level chip |
| US20110230043A1 (en) * | 2010-03-17 | 2011-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tape residue-free bump area after wafer back grinding |
| CN206259345U (en) * | 2016-11-25 | 2017-06-16 | 华天科技（昆山）电子有限公司 | around the bump structure of sealing ring |
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Application publication date: 20170510 |