CN206259345U - around the bump structure of sealing ring - Google Patents
around the bump structure of sealing ring Download PDFInfo
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- CN206259345U CN206259345U CN201621273968.2U CN201621273968U CN206259345U CN 206259345 U CN206259345 U CN 206259345U CN 201621273968 U CN201621273968 U CN 201621273968U CN 206259345 U CN206259345 U CN 206259345U
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- sealing ring
- salient point
- metal level
- bump structure
- layer
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Abstract
The utility model discloses a kind of bump structure around sealing ring, including chip, chip has first surface and second surface corresponding thereto, first surface has an at least electrode zone, first surface or second surface are provided with least one of which metal level, metal level is provided with one layer of welding resisting layer, the conductive welding disk for exposing the metal level is offered on welding resisting layer, polymer adhesive and salient point are disposed with conductive welding disk, the polymer adhesive forms the sealing ring with 3 D polymer network structures upon reflowing, and the sealing ring wraps up salient point foundation portion on welding resisting layer.The sealing ring enhances the adhesion between salient point and conductive welding disk, and thrust strength is greatly increased, with good reworking, optimize the reliability connection of single salient point, processing steps can be also reduced, process costs are reduced, the authenticity product requirement high such as vehicle-mounted, security protection is met.
Description
Technical field
The utility model is related to technical field of semiconductor encapsulation, more particularly to a kind of bump structure around sealing ring.
Background technology
In the method for prior art manufacture solder bump, most commonly in conductive welding disk position print solder paste and plant ball
Method, then be arranged on formed soldered ball on scaling powder by first print fluxing to conductive welding disk in ball processing procedure is planted, and passes through
Solder balls are combined closely with conductive welding disk and realize being electrically connected with, and finally remove scaling powder.The shortcoming of this method is：
(1) salient point is also easy to produce crotch phenomenon, causes to interconnect between two adjacent independent salient points to be short-circuited；Needed in welding process
Scaling powder is used, in order to not influence salient point electric conductivity after having welded, in addition it is also necessary to carry out cleaning scaling powder, complex process, cost
It is higher；
(2) in welding process due to flux activity not enough, the problems such as oven temperature profile easily cause welding cavity, rosin joint and
The problems such as IMC (Intermetallic Compound) layer is blocked up.
(3) chip after the completion of encapsulating needs to use underfill after being welded with circuit board or next stage package substrate,
In addition it is also easy to solder joint fracture and pillow phenomenon occur, it is impossible to meet the authenticity product requirement high such as vehicle-mounted, security protection；
Therefore, to improve techniques described above problem, it is necessary to develop new soldered ball formation scheme, realize that salient point is welded with conductive
Effective connection of disk, improves welding spot reliability.
The content of the invention
In order to solve the above-mentioned technical problem, the utility model proposes a kind of bump structure around sealing ring, substantially keep away
One or more problems caused by the limitation and shortcoming of prior art are exempted from.
What the technical solution of the utility model was realized in：
A kind of bump structure around sealing ring, including a chip, the chip have first surface and corresponding thereto
Second surface, the first surface has an at least electrode zone, and the first surface or the second surface are provided with least one
Layer metal level, the metal level is provided with one layer of welding resisting layer, and the conductive welding disk for exposing the metal level is offered on the welding resisting layer,
Polymer adhesive and salient point are disposed with the conductive welding disk, bag is formed on welding resisting layer after the polymer adhesive backflow
Wrap up in the sealing ring in the salient point foundation portion.
Further, the viscosity of the polymeric adhesive material is 60CP to 40000CP.
Further, the polymer adhesive is a kind of unleaded salient point adhesive.
Further, the salient point is the one kind in solid soldered ball, hollow soldered ball, plastics core soldered ball, copper core soldered ball.
Further, the salient point is electrically connected with by metal level with electrode zone.
Further, the sealing ring is the Polymer Tie-layer with 3-D polymer network structures.
The beneficial effects of the utility model are：The utility model provides a kind of bump structure around sealing ring, employs
Polymer adhesive carries out the formation of salient point, the advantage of this technical scheme instead of common scaling powder:
(1) after polymer adhesive backflow, the electric conductivity of salient point and the external world is not influenceed, it is similar clear without carrying out other again
The step of washing scaling powder.
(2) use of polymer adhesive can effectively reduce welding cavity, rosin joint, IMC (Intermetallic
Compound the phenomenon such as blocked up) is grown.Crotch phenomenon is obviously improved between two adjacent independent salient points, it is to avoid salient point interconnection is caused
Chip remakes salient point or scraps causes yield to decline.
(3) formation of the sealing ring of 3-D polymer network structures, the thrust enhanced between salient point and conductive welding disk is strong
Degree, in the case of the conditions such as chip, thrust machine and its parameter are the same from, thrust test is carried out to salient point, is introduced polymer and is glued
The wafer of mixture is compared to the wafer with common scaling powder, and thrust strength increase by 30% is highly reliable so as to meet vehicle-mounted, security protection etc.
Property product requirement.
(4) salient point is broken and pillow phenomenon after the chip after the completion of encapsulating is welded with circuit board or next stage package substrate
It is obviously improved, together with continuously with circuit board or next stage package substrate be effectively connected to chip by salient point, without entering again in addition
The filling of row underfill material, the polymer adhesive is combined scaling powder with the effect of underfill material, can reduce fabrication steps, greatly
Amplitude reduction process costs.
(5) for technological parameter, the salient point that artificial or apparatus factor is caused exceeds the phenomenon of specification, and such as salient point is interconnected,
Salient point homogeneity is poor, and salient point seriously needs to remake salient point, i.e. heavy industry beyond anomalies such as conductive welding disks, and this polymer glues
Mixture can thoroughly be eliminated, and clean conductive welding disk is presented, and facilitate second effective operation.
Brief description of the drawings
Fig. 1 is wafer schematic diagram in the utility model embodiment；
Fig. 2 is the schematic diagram of making metal level in the utility model embodiment；
Welding resisting layer is made in Fig. 3 the utility model embodiments and form the schematic diagram of conductive welding disk；
The schematic diagram of coated polymeric adhesive in Fig. 4 the utility model embodiments；
The bump structure schematic diagram around sealing ring is formed in Fig. 5 the utility model embodiments；
Wherein, symbol is simply described as follows in accompanying drawing：
100- wafers, 101- wafer first surfaces, 102- wafer second surfaces, 200- metal levels, 300- welding resisting layers, 400-
Conductive welding disk, 500- polymer adhesives, 501- sealing rings, 600- salient points.
Specific embodiment
In order to be more clearly understood that technology contents of the present utility model, described in detail especially exemplified by following examples, its mesh
Be only that and be best understood from content of the present utility model and unrestricted protection domain of the present utility model.The structure of embodiment accompanying drawing
In each part do not scaled by normal rates, therefore do not represent the actual relative size of each structure in embodiment.It is wherein described
Above structure or face or upside, the situation for also having other layers comprising centre.
It is that the utility model introduces the bump structure formed after polymer adhesive, including a chip 100, institute referring to Fig. 5
Stating chip has first surface 101 and second surface corresponding thereto 102, and the first surface has an at least electrode zone,
The electrode zone is not shown, and the first surface or second surface are provided with least one of which metal level 200, are set on the metal level
There is one layer of welding resisting layer 300, the conductive welding disk 400 of expose metal layer is offered on the welding resisting layer, arranged on the conductive welding disk
There are polymer adhesive 500 and salient point 600, the polymer adhesive is formed with 3-D polymer network structures upon reflowing
Sealing ring, the sealing ring wraps up the salient point foundation portion on welding resisting layer.
The chip can be active component (active element) or passive element (passive element), number
The electronic component (electronic components) of the integrated circuit such as word circuit or analog circuit, MEMS (Micro
Electro Mechanical Systems, MEMS), microfluid system (micro fluidic systems) or using heat,
The physical quantity variation such as light and pressure is come the physics sensor (physical sensor), surface acoustic wave element, the feeling of stress that measure
Device (pressure sensors) is surveyed, but is not limited.
Polymer on conductive welding disk 400, conductive welding disk in welding resisting layer 300, welding resisting layer on the metal level 200, metal level
Salient point 600 can be produced on first surface of the chip 100 with electrode zone on adhesive 500 and polymer adhesive, also may be used
To be produced on the second surface back to first surface, electrode zone is not shown, and the metal level 200 electrically connects with electrode zone
Connect, the salient point 600 is electrically connected with by metal level 200 and electrode zone, wherein, the relative position of salient point 600 and electrode zone
Put unrestricted, optionally, when salient point 600 is produced on wafer first surface 101, salient point 600 is formed in directly over electrode zone
Or around electrode zone；In wafer second surface 102, salient point is upside down in wafer second surface to stud bump making back to electrode zone
102。
In the utility model, the chip includes one or more layers circuit, and the circuit is insulating barrier or/and metal
Layer, not shown in the utility model.
Below, the forming method to a kind of bump structure around sealing ring shown in Fig. 5 is described in detail：
Referring to Fig. 1, there is provided one has the wafer 100 of some chips, and the wafer has first surface 101 and corresponding thereto
Second surface 102, the first surface include an at least electrode zone；
Referring to Fig. 2, wafer first surface 101 or second surface 102 by electroplating process, physical vapour deposition (PVD) processing procedure or
Chemical vapor deposition process forms at least one of which metal level 200, and metal level 200 is a kind of in titanium, copper, nickel, tin, target, gold
Single layer structure or it is foregoing in multiple combination into sandwich construction.
Referring to Fig. 3, one layer of welding resisting layer 300 is coated with by way of spin coating or spraying on metal level 200, and by exposure
The mode of development forms the conductive welding disk 400 of expose metal layer.In the present embodiment, welding resisting layer 300 may include epoxy resin, nothing
Machine material (for example, silica, silicon nitride, silicon oxynitride, metal oxide or foregoing combination), high-molecular organic material (example
Such as, polyimide resin, polyamide, benzocyclobutene, Parylene) or other suitable insulating materials.
Referring to Fig. 4, printed by steel mesh in the top of conductive welding disk 400 or polymer adhesive 500 arranged in point gum machine dispensing,
The viscosity scope of the polymer adhesive is 60CP to 40000CP, and is a kind of unleaded salient point adhesive, non-toxic, right
Human body is not injured.
Referring to Fig. 5, formed salient point 600 is printed on the polymer adhesive 500 to conductive welding disk, the salient point
600 can be the one kind in solid soldered ball, hollow soldered ball, plastics core soldered ball, copper core soldered ball, then, be carried out in reflow soldering
Backflow, in reflux course, the metal oxide layer on the removal salient point of polymer adhesive 500 or/and conductive welding disk reaches and helps weldering
Effect, without extra coating scaling powder again, meanwhile, polymer adhesive is shaped to the sealing ring of 3-D polymer network structures,
Spread from salient point foundation portion to salient point top, finally, 3-D polymer network structures form parcel on welding resisting layer after the completion of backflow
The sealing ring in salient point foundation portion, finally cuts into single chip by whole wafer.
In the present embodiment, can change poly- by adjusting the consumption and rework profile of the polymer adhesive 500
The height and width of compound adhesive coverage, the 3-D polymer network structures parcel of the backflow shaping of the polymer adhesive 500
The height in salient point foundation portion is 5 to 100 microns, and it is highly less than the bump height for being eventually formed in the conductive welding disk, covering
Width on welding resisting layer is 10 to 200 microns.
If having other structures that polymer adhesive can be made to be formed on welding resisting layer instead of scaling powder and underfill material to wrap
The sealing ring in salient point foundation portion, falls within protection domain of the present utility model.
Above example is referring to the drawings, preferred embodiment of the present utility model to be described in detail.The skill of this area
Art personnel by carrying out to above-described embodiment modification or change on various forms, but without departing substantially from substantive feelings of the present utility model
Under condition, all fall within protection domain of the present utility model.
Claims (6)
1. a kind of bump structure around sealing ring, it is characterised in that：Including a chip, the chip have first surface and with
Its relative second surface, the first surface has an at least electrode zone, and the first surface or the second surface set
There is at least one of which metal level, the metal level is provided with one layer of welding resisting layer, offered on the welding resisting layer and expose the metal level
Conductive welding disk, is disposed with polymer adhesive and salient point, anti-welding after the polymer adhesive backflow on the conductive welding disk
The sealing ring in the parcel salient point foundation portion is formed on layer.
2. the bump structure around sealing ring according to claim 1, it is characterised in that：The polymeric adhesive material
Viscosity be 60CP to 40000CP.
3. the bump structure around sealing ring according to claim 1, it is characterised in that：The polymer adhesive is one
Plant unleaded salient point adhesive.
4. the bump structure around sealing ring according to claim 1, it is characterised in that：The salient point be solid soldered ball,
One kind in hollow soldered ball, plastics core soldered ball, copper core soldered ball.
5. according to claim 1 around the bump structure of sealing ring, it is characterised in that：The salient point is by metal level and electricity
Polar region domain is electrically connected with.
6. according to claim 1 around the bump structure of sealing ring, it is characterised in that：The sealing ring is poly- with 3-D
The Polymer Tie-layer of polymeric network structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621273968.2U CN206259345U (en) | 2016-11-25 | 2016-11-25 | around the bump structure of sealing ring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621273968.2U CN206259345U (en) | 2016-11-25 | 2016-11-25 | around the bump structure of sealing ring |
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| Publication Number | Publication Date |
|---|---|
| CN206259345U true CN206259345U (en) | 2017-06-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201621273968.2U Active CN206259345U (en) | 2016-11-25 | 2016-11-25 | around the bump structure of sealing ring |
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| CN (1) | CN206259345U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653721A (en) * | 2016-11-25 | 2017-05-10 | 华天科技（昆山）电子有限公司 | Convex point structure for surrounding sealing ring and formation method for convex point structure |
-
2016
- 2016-11-25 CN CN201621273968.2U patent/CN206259345U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653721A (en) * | 2016-11-25 | 2017-05-10 | 华天科技（昆山）电子有限公司 | Convex point structure for surrounding sealing ring and formation method for convex point structure |
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