CN106653646A - 一种冷热腔可控温加热支撑架 - Google Patents

一种冷热腔可控温加热支撑架 Download PDF

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CN106653646A
CN106653646A CN201510719417.8A CN201510719417A CN106653646A CN 106653646 A CN106653646 A CN 106653646A CN 201510719417 A CN201510719417 A CN 201510719417A CN 106653646 A CN106653646 A CN 106653646A
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bracing frame
boss
disk body
heating
demarcation strip
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吕光泉
吴凤丽
郑英杰
张建
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Piotech Inc
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Piotech Shenyang Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

一种冷热腔可控温加热支撑架,主要解决现有半导体镀膜设备热交换效率及产能较低,晶圆温度不够均匀致使薄膜失败的问题,本发明提供一种冷热腔可控温加热支撑架,该加热支撑架包括加热支撑架上盘体,陶瓷柱,分隔板,加热支撑架下盘体,固定螺母。本发明的可控温加热支撑架通过冷热腔利用不同温度的循环媒介的自动调节控温,可以实现加热支撑架温度的自动调节,能够精确地控制加热支撑架的温度。

Description

一种冷热腔可控温加热支撑架
技术领域
本发明涉及一种冷热腔可控温加热支撑架,属于半导体薄膜沉积应用及制造技术领域。
背景技术
半导体设备在进行沉积反应时往往需要使晶圆及腔室加热或维持在沉积反应所需要的温度,所以加热盘必需具备加热结构以满足给晶圆预热的目的。大多数半导体薄膜沉积设备,在沉积过程中还会有等离子体参与沉积反应,因等离子体能量的释放以及化学气体间反应的能量释放,加热盘及晶圆的温度会随着射频及工艺时间的增加温度会不断的上升,如果在进行相同温度下的工艺,需要等待加热盘降到相同的温度后才能进行,这样会耗费大量的时间,设备的产能相对比较低。如果晶圆和加热盘的温度升温过快,晶圆和加热盘的温度会超出薄膜所需承受的温度,致使薄膜失败。
为了解决工艺过程中加热盘温升过快降温慢的问题,我们需要有能够自动调节加热盘温度的系统,来保证加热盘的温度。
发明内容
本发明以解决上述问题为目的,提供了一种冷热腔可控温加热支撑架,该加热支撑架采用媒介加热支撑架进行温度控制,每个部件上有不同的结构,形成支撑架的热空腔室和冷腔室,进而控制加热支撑架的温度。本发明通过不同温度的循环媒介的自动调节控温,可以实现加热支撑架温度的自动调节,能够精确地控制加热支撑架的温度。
为实现上述目的,本发明采用下述技术方案:
一种冷热腔可控温加热支撑架,该加热支撑架包括加热支撑架上盘体,陶瓷柱,分隔板,加热支撑架下盘体,固定螺母;所述加热支撑架上盘体上设有陶瓷柱孔,加热支撑架上盘体的下盘面边缘设有凸台A,陶瓷柱孔边缘设有凸台B,加热支撑架上盘体的下盘面中央位置设有凸台C,所述凸台C处设有热媒通道进口端,热媒通道出口端与热电偶孔;分隔板上设有分隔板陶瓷柱孔,分隔板媒介进口,分隔板媒介出口与分隔板热电偶孔;加热支撑架下盘体上设有通孔,加热支撑架下盘体上盘面的边缘设有凸台D,通孔的边缘设有凸台E,加热支撑架下盘体上盘面的中央位置设有凸台F,凸台F处设有下盘体媒介进口,下盘体媒介出口,热电偶螺纹孔,冷媒进口与冷媒出口;
所述分隔板和加热支撑架下盘体通过焊接后中间形成一个空腔,用以进行冷循环媒介循环,为冷腔;然后再将加热支撑架上盘体与其焊接,形成另一个空腔,用以进行热循环媒介循环,为热腔;然后将陶瓷柱穿过陶瓷柱孔、分隔板陶瓷柱孔与通孔内,通过固定螺母对陶瓷柱进行固定。
进一步地,所述凸台A、凸台B、凸台C、凸台D、凸台E与凸台F的高度相等。
进一步地,所述热电偶孔、分隔板热电偶孔与热电偶螺纹孔的位置与大小均相互对应。
进一步地,所述陶瓷柱孔、分隔板陶瓷柱孔与通孔的位置与大小均相互对应。
本发明的有益效果及特点在于:
本发明的可控温加热支撑架通过不同温度的循环媒介的自动调节控温,可以实现加热支撑架温度的自动调节,能够精确地控制加热支撑架的温度。
附图说明
图1为本发明的结构示意图;
图2为加热支撑架上盘体的下盘面的结构示意图;
图3为分隔板的结构示意图;
图4为加热支撑架下盘体的上盘面的结构示意图。
具体实施方式
下面结合实施例进一步对本发明进行详细说明,但发明保护内容不局限于所述实施例:
参照图1-4,一种冷热腔可控温加热支撑架,该加热支撑架包括加热支撑架上盘体1,陶瓷柱2,分隔板3,加热支撑架下盘体4,固定螺母5;所述加热支撑架上盘体1上设有陶瓷柱孔8,加热支撑架上盘体1的下盘面边缘设有凸台A21,陶瓷柱孔8边缘设有凸台B22,加热支撑架上盘体1的下盘面中央位置设有凸台C23,所述凸台C23处设有热媒通道进口端9,热媒通道出口端10与热电偶孔11;分隔板3上设有分隔板陶瓷柱孔7,分隔板媒介进口12,分隔板媒介出口13与分隔板热电偶孔14;加热支撑架下盘体4上设有通孔6,加热支撑架下盘体4上盘面的边缘设有凸台D24,通孔6的边缘设有凸台E25,加热支撑架下盘体4上盘面的中央位置设有凸台F26,凸台F26处设有下盘体媒介进口15,下盘体媒介出口16,热电偶螺纹孔17,冷媒进口18与冷媒出口19;
所述分隔板3和加热支撑架下盘体4通过焊接后中间形成一个空腔,用以进行冷循环媒介循环,为冷腔;然后再将加热支撑架上盘体1与分隔板3焊接,形成另一个空腔,用以进行热循环媒介循环,为热腔;然后将陶瓷柱2穿过陶瓷柱孔8、分隔板陶瓷柱孔7与通孔6内,通过固定螺母5对陶瓷柱进行固定。
所述凸台A21、凸台B22、凸台C23、凸台D24、凸台E25与凸台F26的高度均相等。
所述热电偶孔11、分隔板热电偶孔14与热电偶螺纹孔17的位置与大小均相互对应。
所述陶瓷柱孔8、分隔板陶瓷柱孔7与通孔6的位置与大小均相互对应。
热循环媒介通过热媒介进口进入加热支撑架上层热腔,热媒介在空腔内循环,由热媒介出口流出,用以加热支撑架的加热;冷媒介由冷媒介入口进入,进入加热支撑架下层冷腔,冷媒介在下层空腔内循环,由冷媒介出口流出;通过控制冷热媒介的各自的温度及流量,实现对加热支撑架温度的控制。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。

Claims (4)

1.一种冷热腔可控温加热支撑架,其特征在于,该加热支撑架包括加热支撑架上盘体,陶瓷柱,分隔板,加热支撑架下盘体,固定螺母;所述加热支撑架上盘体上设有陶瓷柱孔,加热支撑架上盘体的下盘面边缘设有凸台A,陶瓷柱孔边缘设有凸台B,加热支撑架上盘体的下盘面中央位置设有凸台C,所述凸台C处设有热媒通道进口端,热媒通道出口端与热电偶孔;分隔板上设有分隔板陶瓷柱孔,分隔板媒介进口,分隔板媒介出口与分隔板热电偶孔;加热支撑架下盘体上设有通孔,加热支撑架下盘体上盘面的边缘设有凸台D,通孔的边缘设有凸台E,加热支撑架下盘体上盘面的中央位置设有凸台F,凸台F处设有下盘体媒介进口,下盘体媒介出口,热电偶螺纹孔,冷媒进口与冷媒出口;
所述分隔板和加热支撑架下盘体通过焊接后中间形成一个空腔,用以进行冷循环媒介循环,为冷腔;然后再将加热支撑架上盘体与其焊接,形成另一个空腔,用以进行热循环媒介循环,为热腔;然后将陶瓷柱穿过陶瓷柱孔、分隔板陶瓷柱孔与通孔内,通过固定螺母对陶瓷柱进行固定。
2.如权利要求1所述的一种冷热腔可控温加热支撑架,其特征在于,所述凸台A、凸台B、凸台C、凸台D、凸台E与凸台F的高度相等。
3.如权利要求1所述的一种冷热腔可控温加热支撑架,其特征在于,所述热电偶孔、分隔板热电偶孔与热电偶螺纹孔的位置与大小均相互对应。
4.如权利要求1所述的一种冷热腔可控温加热支撑架,其特征在于,所述陶瓷柱孔、分隔板陶瓷柱孔与通孔的位置与大小均相互对应。
CN201510719417.8A 2015-10-29 2015-10-29 一种冷热腔可控温加热支撑架 Pending CN106653646A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114678297A (zh) * 2022-03-11 2022-06-28 智程半导体设备科技(昆山)有限公司 一种半导体加热盘
CN114893966A (zh) * 2022-05-13 2022-08-12 唐静静 一种硫酸钾生产用温度控制系统

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114678297A (zh) * 2022-03-11 2022-06-28 智程半导体设备科技(昆山)有限公司 一种半导体加热盘
CN114893966A (zh) * 2022-05-13 2022-08-12 唐静静 一种硫酸钾生产用温度控制系统
CN114893966B (zh) * 2022-05-13 2023-08-18 唐静静 一种硫酸钾生产用温度控制系统

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