CN106646736B - Optical waveguide - Google Patents
Optical waveguide Download PDFInfo
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- CN106646736B CN106646736B CN201611019852.0A CN201611019852A CN106646736B CN 106646736 B CN106646736 B CN 106646736B CN 201611019852 A CN201611019852 A CN 201611019852A CN 106646736 B CN106646736 B CN 106646736B
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- covering
- buried oxide
- layer
- region
- oxide layer
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12152—Mode converter
Abstract
The embodiment of the invention provides a kind of optical waveguides, including：Substrate (01), buried oxide layer (02), ducting layer (06), covering (03) and the damp-proof layer (05) stacked gradually；The damp-proof layer (05) covers at least partly region on covering (03) surface, and at least partly region includes the region with the ducting layer (06) face.The optical waveguide of the embodiment of the present invention can be improved the humidity resistance of optical waveguide, by the way that damp-proof layer is arranged in cladding surface to reduce humidity variation to the mode distributions of the optical waveguide and the influence of mould field size.
Description
Technical field
The present invention relates to optical communication field more particularly to a kind of optical waveguides.
Background technique
Silicon light technology is to utilize complementation as basic material with silicon-on-insulator (Silicon-on-insulator, SOI)
Metal-oxide semiconductor (MOS) (Complementary Metal Oxide Semiconductor, CMOS) technique carries out production light
Chip realizes the technology of photosignal conversion.As shown in Figure 1, SOI is by substrate (Substrate), buried oxide layer (Buried
Oxide, Box) and ducting layer (Waveguide layer) composition, wherein the material of substrate is Si, and the material of buried oxide layer is
SiO2, the material of ducting layer is Si.Due to SiO2Refractive index it is smaller (about 1.44), and the refractive index of Si is very big (about
3.47), therefore the refringence of SOI waveguide is very big, and very strong to the limitation of light, waveguide can be small-sized, typical waveguide
Size is 400nm × 220nm.
In existing scheme, covering usually can be also set on the ducting layer of SOI waveguide, covering generally uses SiO2Material,
Due to the SOI waveguide local environment humidity variation in the case where, SiO2The refractive index of material can change, correspondingly,
Using the SiO2The refractive index of the covering of material can also change, and then lead to the mode distributions and mould field size hair of optical waveguide
Changing.
Summary of the invention
The present invention provides a kind of optical waveguides, for reducing in the case where the variation of the humidity of the optical waveguide local environment
The mode distributions of the optical waveguide and the amplitude of variation of mould field size, to reduce humidity variation to the mode distributions and mould of the optical waveguide
The influence of field size.
In a first aspect, a kind of optical waveguide is provided, including：
Substrate (01), buried oxide layer (02), ducting layer (06), covering (03) and the damp-proof layer (05) stacked gradually；
The damp-proof layer (05) covers at least partly region on covering (03) surface, at least partly region packet
Include the region with the ducting layer (06) face.
The optical waveguide of the embodiment of the present invention can be improved the moisture resistance of optical waveguide by the way that damp-proof layer is arranged in cladding surface
Can, changed with reducing the humidity of the optical waveguide local environment to the mode distributions of the optical waveguide and the influence of mould field size.
In some possible implementations, the buried oxide layer (02) covers the first surface of the substrate (01) at least
Partial region, the ducting layer (06) cover the first area of the first surface of the buried oxide layer (02), and the covering (03) is covered
At least partly region on the first surface of the buried oxide layer (02) in addition to the first area and the ducting layer (06) are covered,
Wherein, the first surface of the substrate (01) is the side on the substrate (01) close to the buried oxide layer (02)
Surface, the first surface of the buried oxide layer (02) are the surface of the side on the buried oxide layer (02) far from the substrate (01).
In some possible embodiments, the buried oxide layer (02) covers the first surface of the substrate (01), described
Region on the first surface of buried oxide layer (02) in addition to the first area includes second area, third region, the fourth region
With the 5th region, the 5th region, the third region and the 4th are spaced between the second area and the third region
Region is adjacent with the first area, and the third region is located at the side of the first area, and the fourth region is located at
The other side of the first area；
The covering (03) includes the first covering (031) and the second covering (032), and first covering (031) covers institute
Second area is stated, second covering (032) covers the third region, the ducting layer (06) and the fourth region；
The damp-proof layer (05) covers at least partly region of the first surface of first covering (031), described second
Close to the side wall of second covering (032), second packet on the first surface of covering (032), first covering (031)
The side wall of a close covering (031) and the 5th region on layer (032),
Wherein, the first surface of first covering (031) is on first covering (031) far from the buried oxide layer
(02) surface of side, the first surface of second covering (032) are to bury oxygen far from described on second covering (032)
The surface of the side of layer (02).
In this way, damp-proof layer (05) can also cover the side wall of the second covering (032), it is therefore prevented that steam oozes from the side wall of covering
Enter, the humidity resistance of optical waveguide can be further increased, is changed with being further reduced the humidity of the optical waveguide local environment to this
The mode distributions of optical waveguide and the influence of mould field size.
In some possible embodiments, the buried oxide layer (02) covers the first surface of the substrate (01), described
At least partly region on the first surface of buried oxide layer (02) in addition to the first area include second area, third region and
The fourth region, the third region and the fourth region are adjacent with the first area, and the third region is located at described first
The side in region, the fourth region are located at the other side of the first area；
There is groove on the buried oxide layer (02), the notch of the groove faces away from the substrate (01), and described the
Two regions are located at the side of the first inner sidewall of the groove, the third region, the first area and the fourth region
Positioned at the side of the second inner sidewall of the groove, the second inner sidewall of the first inner sidewall of the groove and second groove
Be it is opposite,
The covering (03) includes the first covering (031) and the second covering (032), and first covering (031) covers institute
Second area is stated, second covering (032) covers the third region, the ducting layer (06) and the fourth region；
The damp-proof layer (05) covers at least partly region of the first surface of first covering (031), described second
Close to the side wall of second covering (032), second packet on the first surface of covering (032), first covering (031)
The close side wall of first covering (031) and the inner surface of the groove on layer (032),
Wherein, the first surface of first covering (031) is on first covering (031) far from the buried oxide layer
(02) surface of side, the first surface of second covering (032) are to bury oxygen far from described on second covering (032)
The surface of the side of layer (02), the inner surface of the groove include first inner sidewall, second inner sidewall and described recessed
The bottom surface of slot.
In this way, damp-proof layer (05) can also cover the inner surface of the groove on buried oxide layer (02), light can be further increased
The humidity resistance of waveguide, to be further reduced mode distributions and mould of the humidity variation to the optical waveguide of the optical waveguide local environment
The influence of field size.
In some possible embodiments, the first surface of the substrate (01) include the 6th region, District 7 domain and
Section Eight domain is spaced the Section Eight domain between the 6th region and the District 7 domain；
The buried oxide layer (02) includes the first buried oxide layer (021) and the second buried oxide layer (022), first buried oxide layer
(021) the 6th region is covered, second buried oxide layer (022) covers the District 7 domain, ducting layer (06) covering
The first area of the first surface of second buried oxide layer (02), the first surface of second buried oxide layer (022) are described the
The surface of side in one buried oxide layer (022) far from the substrate (01)；
The covering (03) includes the first covering (031) and the second covering (032), and first covering (031) covers institute
The first surface of the first buried oxide layer (021) is stated, second covering (032) covers the ducting layer (06) and described second and buries oxygen
Region on the first surface of layer (022) in addition to the first area, the first surface of first buried oxide layer (021) is institute
State the surface of the side on the first buried oxide layer (021) far from the substrate (01)；
The damp-proof layer (05) covers at least partly region of the first surface of first covering (031), described second
Close to the side wall of second covering (032), second packet on the first surface of covering (032), first covering (031)
Close to second buried oxide layer in the side wall of first covering (031), first buried oxide layer (021) on layer (032)
(022) close to the side wall and the Section Eight of first buried oxide layer (021) on side wall, second buried oxide layer (022)
Domain,
Wherein, the first surface of first covering (031) is on first covering (031) far from the buried oxide layer
(02) surface of side, the first surface of second covering (032) are to bury oxygen far from described on second covering (032)
The surface of the side of layer (02).
In this way, damp-proof layer (05) can also cover the two sides side wall of the second buried oxide layer (022) where ducting layer (06), energy
The humidity resistance of optical waveguide is enough further increased, is changed with being further reduced the humidity of the optical waveguide local environment to the optical waveguide
Mode distributions and mould field size influence.
In some possible embodiments, the covering (03), which covers, removes institute on the first surface of the buried oxide layer (02)
State the region except first area and the ducting layer (06).
Be conducive to simplify the manufacture craft of optical waveguide in this way.
In some possible embodiments, optical waveguide further includes：Top covering (07), described in the top covering (07) covering
Far from a side surface of the covering (03) on damp-proof layer (05).
By the way that top covering is arranged on damp-proof layer, the humidity resistance of optical waveguide can be further increased.
In some possible embodiments, the damp-proof layer (05) includes one or more layers sub- damp-proof layer.
In some possible embodiments, the damp-proof layer (05) comprises at least one of the following material：SixN1-x、
SiON, Al and Al1-xOx, wherein 0<x<1.
In some possible embodiments, the distance between the damp-proof layer (05) and the ducting layer (06) be greater than or
Equal to 1 μm and it is less than or equal to 20 μm.
By making to be spaced suitable distance between damp-proof layer and ducting layer, damp-proof layer can be reduced to the mould field of optical waveguide
It influences, and then influence of the damp-proof layer to the performance of optical waveguide can be reduced.
In some possible embodiments, the thickness of the damp-proof layer (05) is greater than or equal to 2nm and is less than or equal to
200nm。
For example, the thickness of damp-proof layer (05) can also be greater than or equal to 3nm and be less than or equal to 100nm.
By the way that suitable thickness is arranged for damp-proof layer, influence of the damp-proof layer to the mould field of optical waveguide, Jin Erneng can be reduced
Enough reducing damp-proof layer influences the performance of optical waveguide.
In some possible embodiments, the optical waveguide is spot-size converter.
The humidity that the spot-size converter of the embodiment of the present invention can reduce the reversed silicon based three-dimensional wedge local environment becomes
Changing influences its mode distributions and mould field size bring, loses so as to improve the mould field between spot-size converter and optical fiber
Match, reduces the insertion loss of spot-size converter.
In some possible embodiments, the optical waveguide is reversed silicon based three-dimensional wedge.
Detailed description of the invention
Fig. 1 is the cross section structure schematic diagram of silicon-on-insulator；
Fig. 2 is the cross section structure schematic diagram of optical waveguide according to an embodiment of the invention；
Fig. 3 is the overall structure diagram of spot-size converter；
Fig. 4 is the cross section structure schematic diagram of optical waveguide according to another embodiment of the present invention；
Fig. 5 is the cross section structure schematic diagram of optical waveguide according to another embodiment of the present invention；
Fig. 6 is the cross section structure schematic diagram of optical waveguide according to another embodiment of the present invention；
Fig. 7 is the cross section structure schematic diagram of optical waveguide according to another embodiment of the present invention；
Fig. 8 is the cross section structure schematic diagram of optical waveguide according to another embodiment of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention is described.
Fig. 2 is the schematic diagram of optical waveguide according to an embodiment of the present invention.As shown in Fig. 2, optical waveguide includes stacking gradually
Substrate (01), buried oxide layer (02), ducting layer (06), covering (03) and damp-proof layer (05).
Damp-proof layer (05) covers at least partly region on covering (03) surface, and at least partly region includes and ducting layer
(06) region of face.
The optical waveguide of the embodiment of the present invention can be improved the moisture resistance of optical waveguide by the way that damp-proof layer is arranged in cladding surface
Can, changed with reducing the humidity of the optical waveguide local environment to the mode distributions of the optical waveguide and the influence of mould field size.
Specifically, at least partly region of the first surface of buried oxide layer (02) covering substrate (01), ducting layer (06) covering
The first area (11) of the first surface of buried oxide layer (02), covering (03), which covers, removes the firstth area on the first surface of buried oxide layer (02)
At least partly region and ducting layer (06) except domain (11).
Wherein, the first surface of substrate (01) is on substrate (01) close to the surface of the side of buried oxide layer (02), buried oxide layer
(02) first surface is the surface of the side on buried oxide layer (02) far from substrate (01).
As shown in Fig. 2, if substrate (01), buried oxide layer (02), ducting layer (06), covering (03) in optical waveguide and moisture-proof
Layer (05) is stacked gradually along direction from bottom to up, then the first surface of substrate (01) is the upper surface of substrate (01), is buried
The first surface of oxygen layer (02) is the upper surface of buried oxide layer (02).For ease of description, can will be each in optical waveguide as shown in Figure 2
The upper surface Unify legislation of layer is first surface, and the lower surface Unify legislation of each layer is second surface.
It should be noted that at least partly region of the first surface of buried oxide layer (02) covering substrate (01), it is meant that bury
The second surface of oxygen layer (02) is in contact at least partly region of the first surface of substrate (01).Oxygen is buried in ducting layer (06) covering
The first area (11) of the first surface of layer (02), it is meant that the second surface of ducting layer (06) and first table of buried oxide layer (02)
The first area (11) in face is in contact.Similarly, first area is removed on the first surface of covering (03) covering buried oxide layer (02)
(11) at least partly region and ducting layer (06) except, it is meant that the first of the second surface of covering (03) and buried oxide layer (02)
The side at least partly region, ducting layer (06) first surface and ducting layer (06) two sides on surface in addition to first area (11)
Wall is in contact.
In some embodiments, optical waveguide shown in Fig. 2 can for spot-size converter (Spot Size Converter,
SSC).It is illustrated in figure 3 the overall structure diagram of SSC, SSC can be coupled the light into other optical waveguides (such as optical fiber).It answers
Understand, SSC can use wedge structure shown in Fig. 3, but wedge shape SSC knot shown in Fig. 3 is not limited in the embodiment of the present invention
Structure.
It should be understood that optical waveguide shown in Fig. 2 is also used as other fiber waveguide devices.
For example, the size of ducting layer (06) can be designed as 130nm × 220nm, wherein 220nm can be ducting layer (06)
Height value, 130nm can be ducting layer (06) width value.It should be understood that ducting layer (06) is also designed to other rulers
It is very little.
It should be noted that 130nm × 220nm can refer to if spot-size converter uses wedge structure shown in Fig. 3
Be wedge structure most narrow end ducting layer size.
The humidity that the spot-size converter of the embodiment of the present invention can reduce environment changes to its mode distributions and mould field size
(mode field size) bring influences, and so as to improve the model field unbalance between spot-size converter and optical fiber, reduces mould
The insertion loss of spot-size converter.
The material of substrate (01) is Si, and the material of buried oxide layer (02) is SiO2, the material of ducting layer (06) is Si, covering
(03) material is SiO2。
In some embodiments, damp-proof layer (05) may include a straton damp-proof layer.In further embodiments, such as Fig. 4
Shown, damp-proof layer (05) can also include the sub- damp-proof layer of multilayer.By the way that the sub- damp-proof layer of multilayer is arranged, can further enhance moisture-proof
Effect.
It should be understood that damp-proof layer (05) can also include other in Fig. 4 only by taking two straton damp-proof layers (051) and (052) as an example
The sub- damp-proof layer of the multilayer of quantity.
The material of damp-proof layer (05) can have a protective action to moisture, while the refractive index of the material of damp-proof layer (05) can be with
More than or equal to 1.4 and less than or equal to 3, influence of the damp-proof layer to the mould field of optical waveguide can be reduced in this way.For example, damp-proof layer (05)
Material can be SixN1-x, SiON, Al or Al1-xOx, wherein 0<x<1.But the embodiment of the present invention does not limit this, damp-proof layer
(05) material can also be other barrier materials.
When damp-proof layer (05) includes the sub- damp-proof layer of multilayer, the material of the sub- damp-proof layer of the multilayer can be identical, can also not
Together, it is not limited in the embodiment of the present invention.
The refractive index of ducting layer (06) adjacent covering (03) and the mould field size strong correlation of optical waveguide, by covering table
Damp-proof layer is arranged in face, can be avoided steam and enters covering (03), and then can reduce steam to the mode distributions and mould of optical waveguide
The influence of field size.
Optionally, as shown in figure 5, optical waveguide shown in Fig. 2 can also include top covering (04).Top covering (04) covering is anti-
Far from a side surface of covering (03) on damp layer (05).
In some embodiments, the material of top covering (04) can be identical as the material of covering (03), can also be with covering
(03) material is different, and it is not limited in the embodiment of the present invention.For example, the material of top covering (04) can be SiO2, can also
Think Si3N4, or doping Si1-xOx, such as can be with p-doped (P) or boron (B).
It should be understood that top covering (04) is referred to as passivation layer when top covering (04) is located at the outermost layer of optical waveguide.
By the way that top covering is arranged on damp-proof layer, the humidity resistance of optical waveguide can be further increased, to be further reduced
The humidity of the optical waveguide local environment changes to the mode distributions of the optical waveguide and the influence of mould field size.
As shown in Fig. 2, can be avoided steam by the damp-proof layer that a layer plane is arranged in optical waveguide and ooze from upper surface
Enter, structure is simple, practical.But steam can ooze from side wall into, therefore the embodiment of the present invention also proposed one kind can
Realize the structure that three bread cover, as shown in Figure 6 to 8.It should be understood that Fig. 6 to Fig. 8 is the example of optical waveguide shown in Fig. 2, to avoid
It repeats, corresponding content is suitably omitted.
Covering (03) in optical waveguide shown in Fig. 6 to Fig. 8 includes the first covering (031) and the second covering (032), the first packet
The first surface of layer (031) is the surface of the side on the first covering (031) far from buried oxide layer (02), the second covering (032)
First surface is the surface of the side on the second covering (032) far from buried oxide layer (02).
Optionally, as shown in fig. 6, the first surface of buried oxide layer (02) covering substrate (01), the first table of buried oxide layer (02)
Region on face in addition to first area (11) includes second area (12), third region (13), the fourth region (14) and the 5th
Region (15) is spaced the 5th region (15), third region (13) and the 4th area between second area (12) and third region (13)
Domain (14) is adjacent with first area (11), and third region (13) are located at the side of first area (11), the fourth region (14) position
In the other side of first area (11)；
First covering (031) covers second area, and the second covering (032) covers third region, ducting layer (06) and the 4th
Region (14)；
Damp-proof layer (05) cover at least partly region of first surface of the first covering (031), the second covering (032) the
Close to the first covering on the side wall, the second covering (032) of the second covering (032) on one surface, the first covering (031)
(031) side wall and the 5th region (15).
In this way, by the area for further increasing damp-proof layer (05) covering, so that damp-proof layer (05) can also cover second
The side wall of covering (032), it is therefore prevented that steam from the side wall of covering ooze into, the humidity resistance of optical waveguide can be further increased, with
Humidity variation is further reduced to the mode distributions of the optical waveguide and the influence of mould field size.
In some embodiments, damp-proof layer (05) can only cover the first surface of the second covering (032), the second covering
(032) side wall and the 5th region (15) on close to the first covering (031).
It should be noted that in some embodiments, covering (03) can also include first covering in optical waveguide
(031) and second covering (032), the first covering (031) are located at the side of the second covering (032).
In some embodiments, as shown in fig. 6, covering (03) can also include two the first coverings (031) in optical waveguide
With the one the second covering (032), and two the first coverings (031) are located at the two sides of the second covering (032).Two
The positional relationship of the first covering of each of one covering (031) (031) and the other parts in optical waveguide can refer to retouches above
It states, is not repeated herein.
Optionally, as shown in fig. 7, the first surface of buried oxide layer (02) covering substrate (01), the first table of buried oxide layer (02)
At least partly region on face in addition to first area (11) includes second area (12), third region (13) and the fourth region
(14), third region (13) and the fourth region (14) are adjacent with first area (11), and third region (13) are located at first area
(11) side, the fourth region (14) are located at the other side of first area (11)；
There is groove, the notch of groove faces away from substrate (01), and second area (12) is located at recessed in buried oxide layer (02)
The side of first inner sidewall of slot, third region (13), first area (11) and the fourth region (14) are located in the second of groove
The side of side wall, the first inner sidewall of groove and the second inner sidewall of the second groove are opposite；
First covering (031) covers second area (12), and the second covering (032) covers third region (13), ducting layer
(06) and the fourth region (14)；
Damp-proof layer (05) cover at least partly region of first surface of the first covering (031), the second covering (032) the
Close to the first covering on the side wall, the second covering (032) of the second covering (032) on one surface, the first covering (031)
(031) inner surface of side wall and groove.
Wherein, the inner surface of groove includes the bottom surface of the first inner sidewall, the second inner sidewall and groove.
In this way, by the area for further increasing damp-proof layer (05) covering, so that damp-proof layer (05) can also cover and bury oxygen
The inner surface of groove on layer (02), can further increase the humidity resistance of optical waveguide, to be further reduced the optical waveguide institute
The humidity for locating environment changes to the mode distributions of the optical waveguide and the influence of mould field size.
In some embodiments, damp-proof layer (05) can only cover the first surface of the second covering (032), the second covering
(032) close to side wall, the second inner sidewall of groove and the ground of groove of the first covering (031) on.
In some embodiments, close to the side wall of the second covering (032) and the first inside of groove on the first covering (031)
Wall can be generally aligned in the same plane.
In some embodiments, close to the side wall of the second covering (032) and the first inside of groove on the first covering (031)
Wall can also be located at different planes.For example, the first inner sidewall of the groove can protrude from the first covering (031) close to the
The side wall of two coverings (032).
Similarly, the second inner sidewall of the side wall on the second covering (032) close to the first covering (031) and groove can position
In same plane, different planes can also be located at.
It should be noted that in some embodiments, covering (03) can also include first covering in optical waveguide
(031) and second covering (032), the first covering (031) are located at the side of the second covering (032).Buried oxide layer has on (02)
There are a groove, the position of region face of the groove between the first covering (031) and the second covering (032).
In some embodiments, as shown in fig. 7, covering (03) can also include two the first coverings (031) and one the
One second covering (032), and two the first coverings (031) are located at the two sides of the second covering (032).Buried oxide layer has on (02)
There are two groove, which is located at the region face between two the first coverings (031) and the second covering (032)
Position.The positional relationship of other each layers in the first covering of each of two first coverings (031) (031) and optical waveguide, with
And each groove in two grooves and the positional relationship of the other parts in optical waveguide can refer to above description, herein no longer
It repeats.
Optionally, as shown in figure 8, the first surface of substrate (01) includes the 6th region (16), District 7 domain (17) and the
Eight regions (18) are spaced Section Eight domain (18) between the 6th region (16) and District 7 domain (17)；
Buried oxide layer (02) includes the first buried oxide layer (021) and the second buried oxide layer (022), and the first buried oxide layer (021) covers the
Six regions (16), the second buried oxide layer (022) cover District 7 domain (17), and ducting layer (06) covers the first of the second buried oxide layer (02)
The first area (11) on surface, the first surface of the second buried oxide layer (022) are on the first buried oxide layer (022) far from substrate (01)
The surface of side；
First covering (031) covers the first surface of the first buried oxide layer (021), and the second covering (032) covers ducting layer
(06) and the region on the first surface of the second buried oxide layer (022) in addition to first area, the first table of the first buried oxide layer (021)
Face is the surface of the side on the first buried oxide layer (021) far from substrate (01)；
Damp-proof layer (05) cover at least partly region of first surface of the first covering (031), the second covering (032) the
Close to the first covering on the side wall, the second covering (032) of the second covering (032) on one surface, the first covering (031)
(031) close in the side wall of the second buried oxide layer (022), the second buried oxide layer (022) on side wall, the first buried oxide layer (021)
The side wall of first buried oxide layer (021) and Section Eight domain (18).
In this way, damp-proof layer (05) can also cover the entire side wall of buried oxide layer (02), optical waveguide can be further increased
Humidity resistance, to be further reduced mode distributions and mould field size of the humidity variation to the optical waveguide of the optical waveguide local environment
Influence.
In some embodiments, damp-proof layer (05) can only cover the first surface of the second covering (032), the second covering
(032) close to the side wall of the first buried oxide layer (021) and the in the side wall of the first covering (031), the second buried oxide layer (022) on
Eight regions.
It should be noted that in some embodiments, covering (03) can also include first covering in optical waveguide
(031) and second covering (032), first covering (031) are located at the side of the second covering (032).Buried oxide layer (02) packet
First buried oxide layer (021) and second buried oxide layer (022) are included, which is located at the second buried oxide layer
(032) side.
In some embodiments, as shown in figure 8, covering (03) can also include two the first coverings (031) in optical waveguide
With the one the second covering (032), and two the first coverings (031) are located at the two sides of the second covering (032).Buried oxide layer
(02) there are two the first buried oxide layer (021) and two the second buried oxide layers (022) for tool on, and two first buried oxide layers (021) are respectively
Positioned at the two sides of the second buried oxide layer (022).In the first covering of each of two first coverings (031) (031) and optical waveguide
In the first buried oxide layer of each of the positional relationship of other each layers and two the first buried oxide layers (021) (021) and optical waveguide
The positional relationship of other parts can refer to above description, be not repeated herein.
The partial region of covering (03) and/or buried oxide layer (02) can be etched away using etching technics, be obtained such as Fig. 6 extremely
Structure shown in Fig. 8, to increase the region of damp-proof layer covering.
Optionally, as shown in Fig. 6, Fig. 7 and Fig. 8, damp-proof layer (05) covers the part of the first surface of the first covering (031)
Region.
The manufacture craft of optical waveguide can be simplified in this way.
It should be understood that damp-proof layer (05) can also cover the whole region of the first surface of the first covering (031).
Optionally, the distance between damp-proof layer (05) and ducting layer (06) are greater than or equal to 1 μm and are less than or equal to 20 μm.
As shown in Fig. 2, Fig. 4 to Fig. 8, the fore-and-aft distance between the top edge of the lower edge and ducting layer (06) of damp-proof layer 05 be greater than or
Equal to 1 μm and it is less than or equal to 20 μm.As shown in Fig. 6 to Fig. 8, side of the damp-proof layer (05) on the left of the second covering (032)
The lateral distance at the edge on the left of edge and ducting layer (06) is greater than or equal to 1 μm and is less than or equal to 20 μm or damp-proof layer
(05) lateral distance at the edge on the right side of the edge and ducting layer (06) on the right side of the second covering (032) is greater than or equal to 1 μm
And it is less than or equal to 20 μm.
By making to be spaced suitable distance between damp-proof layer and ducting layer, damp-proof layer can be reduced to the mould field of optical waveguide
It influences, and then influence of the damp-proof layer to the performance of optical waveguide can be reduced.
Optionally, the thickness of damp-proof layer (05) is greater than or equal to 3nm and is less than or equal to 100nm.
Optionally, the thickness of damp-proof layer (05) is greater than or equal to 2nm and is less than or equal to 200nm.
By the way that suitable thickness is arranged for damp-proof layer, influence of the damp-proof layer to the mould field of optical waveguide, Jin Erneng can be reduced
Enough reduce influence of the damp-proof layer to the performance of optical waveguide.
It should be noted that the embodiment of the present invention to the manufacture craft of optical waveguide without limitation.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (21)
1. a kind of optical waveguide, which is characterized in that including：
Substrate (01), buried oxide layer (02), ducting layer (06), covering (03) and the damp-proof layer (05) stacked gradually；
The damp-proof layer (05) covers at least partly region on covering (03) surface, at least partly region include with
The region of ducting layer (06) face；
The buried oxide layer (02) covers at least partly region of the first surface of the substrate (01), ducting layer (06) covering
The first area of the first surface of the buried oxide layer (02), the covering (03) cover on the first surface of the buried oxide layer (02)
At least partly region and the ducting layer (06) in addition to the first area,
Wherein, the first surface of the substrate (01) is the table of the side of the buried oxide layer (02) close on the substrate (01)
Face, the first surface of the buried oxide layer (02) are the surface of the side on the buried oxide layer (02) far from the substrate (01)；
The buried oxide layer (02) covers the first surface of the substrate (01), removes on the first surface of the buried oxide layer (02) described
Region except first area includes second area, third region, the fourth region and the 5th region, the second area with it is described
The 5th region is spaced between third region, the third region and the fourth region are adjacent with the first area, described
Third region is located at the side of the first area, and the fourth region is located at the other side of the first area；
The covering (03) includes the first covering (031) and the second covering (032), and first covering (031) covers described the
Two regions, second covering (032) cover the third region, the ducting layer (06) and the fourth region；
The damp-proof layer (05) covers at least partly region of the first surface of first covering (031), second covering
(032) close to side wall, second covering of second covering (032) on first surface, first covering (031)
(032) side wall of close first covering (031) and the 5th region on,
Wherein, the first surface of first covering (031) is on first covering (031) far from the buried oxide layer (02)
The surface of side, the first surface of second covering (032) are on second covering (032) far from the buried oxide layer (02)
Side surface.
2. optical waveguide according to claim 1, which is characterized in that further include：
Top covering (04), the top covering (04) cover the side surface on the damp-proof layer (05) far from the covering (03).
3. optical waveguide according to claim 1 or 2, which is characterized in that the damp-proof layer (05) includes one or more layers son
Damp-proof layer.
4. optical waveguide according to claim 1 or 2, which is characterized in that the damp-proof layer (05) comprises at least one of the following
Material：SixN1-x, SiON, Al and Al1-xOx, wherein 0<x<1.
5. optical waveguide according to claim 1 or 2, which is characterized in that the damp-proof layer (05) and the ducting layer (06)
The distance between be greater than or equal to 1 μm and be less than or equal to 20 μm.
6. optical waveguide according to claim 1 or 2, which is characterized in that the thickness of the damp-proof layer (05) is greater than or equal to
2nm and be less than or equal to 200nm.
7. optical waveguide according to claim 1 or 2, which is characterized in that the optical waveguide is reversed silicon based three-dimensional wedge.
8. a kind of optical waveguide, which is characterized in that including：
Substrate (01), buried oxide layer (02), ducting layer (06), covering (03) and the damp-proof layer (05) stacked gradually；
The damp-proof layer (05) covers at least partly region on covering (03) surface, at least partly region include with
The region of ducting layer (06) face；
The buried oxide layer (02) covers at least partly region of the first surface of the substrate (01), ducting layer (06) covering
The first area of the first surface of the buried oxide layer (02), the covering (03) cover on the first surface of the buried oxide layer (02)
At least partly region and the ducting layer (06) in addition to the first area,
Wherein, the first surface of the substrate (01) is the table of the side of the buried oxide layer (02) close on the substrate (01)
Face, the first surface of the buried oxide layer (02) are the surface of the side on the buried oxide layer (02) far from the substrate (01)；
The buried oxide layer (02) covers the first surface of the substrate (01), removes on the first surface of the buried oxide layer (02) described
At least partly region except first area includes second area, third region and the fourth region, the third region and the 4th
Region is adjacent with the first area, and the third region is located at the side of the first area, and the fourth region is located at
The other side of the first area；
There is groove, the notch of the groove faces away from the substrate (01), secondth area on the buried oxide layer (02)
Domain is located at the side of the first inner sidewall of the groove, and the third region, the first area and the fourth region are located at
The side of second inner sidewall of the groove, the first inner sidewall of the groove are opposite with the second inner sidewall of the groove
's；
The covering (03) includes the first covering (031) and the second covering (032), and first covering (031) covers described the
Two regions, second covering (032) cover the third region, the ducting layer (06) and the fourth region；
The damp-proof layer (05) covers at least partly region of the first surface of first covering (031), second covering
(032) close to side wall, second covering of second covering (032) on first surface, first covering (031)
(032) the close side wall of first covering (031) and the inner surface of the groove on,
Wherein, the first surface of first covering (031) is on first covering (031) far from the buried oxide layer (02)
The surface of side, the first surface of second covering (032) are on second covering (032) far from the buried oxide layer (02)
Side surface, the inner surface of the groove includes the bottom of first inner sidewall, second inner sidewall and the groove
Face.
9. optical waveguide according to claim 8, which is characterized in that further include：
Top covering (04), the top covering (04) cover the side surface on the damp-proof layer (05) far from the covering (03).
10. optical waveguide according to claim 8 or claim 9, which is characterized in that the damp-proof layer (05) includes one or more layers son
Damp-proof layer.
11. optical waveguide according to claim 8 or claim 9, which is characterized in that the damp-proof layer (05) comprises at least one of the following
Material：SixN1-x, SiON, Al and Al1-xOx, wherein 0<x<1.
12. optical waveguide according to claim 8 or claim 9, which is characterized in that the damp-proof layer (05) and the ducting layer (06)
The distance between be greater than or equal to 1 μm and be less than or equal to 20 μm.
13. optical waveguide according to claim 8 or claim 9, which is characterized in that the thickness of the damp-proof layer (05) is greater than or equal to
2nm and be less than or equal to 200nm.
14. optical waveguide according to claim 8 or claim 9, which is characterized in that the optical waveguide is the conversion of reversed wedge-shaped die spot
Device.
15. a kind of optical waveguide, which is characterized in that including：
Substrate (01), buried oxide layer (02), ducting layer (06), covering (03) and the damp-proof layer (05) stacked gradually；
The damp-proof layer (05) covers at least partly region on covering (03) surface, at least partly region include with
The region of ducting layer (06) face；
The buried oxide layer (02) covers at least partly region of the first surface of the substrate (01), ducting layer (06) covering
The first area of the first surface of the buried oxide layer (02), the covering (03) cover on the first surface of the buried oxide layer (02)
At least partly region and the ducting layer (06) in addition to the first area,
Wherein, the first surface of the substrate (01) is the table of the side of the buried oxide layer (02) close on the substrate (01)
Face, the first surface of the buried oxide layer (02) are the surface of the side on the buried oxide layer (02) far from the substrate (01)；
The first surface of the substrate (01) include the 6th region, District 7 domain and Section Eight domain, the 6th region with it is described
The Section Eight domain is spaced between District 7 domain；
The buried oxide layer (02) includes the first buried oxide layer (021) and the second buried oxide layer (022), and first buried oxide layer (021) is covered
The 6th region is covered, second buried oxide layer (022) covers the District 7 domain, ducting layer (06) covering described second
The first area of the first surface of buried oxide layer (02), the first surface of second buried oxide layer (022) are second buried oxide layer
(022) surface of the side on far from the substrate (01)；
The covering (03) includes the first covering (031) and the second covering (032), and first covering (031) covers described the
The first surface of one buried oxide layer (021), second covering (032) cover the ducting layer (06) and second buried oxide layer
(022) first surface in the region on first surface in addition to the first area, first buried oxide layer (021) is described
The surface of side in first buried oxide layer (021) far from the substrate (01)；
The damp-proof layer (05) covers at least partly region of the first surface of first covering (031), second covering
(032) close to side wall, second covering of second covering (032) on first surface, first covering (031)
(032) close to second buried oxide layer in the side wall of first covering (031), first buried oxide layer (021) on
(022) close to the side wall and the Section Eight of first buried oxide layer (021) on side wall, second buried oxide layer (022)
Domain,
Wherein, the first surface of first covering (031) is on first covering (031) far from the buried oxide layer (02)
The surface of side, the first surface of second covering (032) are on second covering (032) far from the buried oxide layer (02)
Side surface.
16. optical waveguide described in 5 according to claim 1, which is characterized in that further include：
Top covering (04), the top covering (04) cover the side surface on the damp-proof layer (05) far from the covering (03).
17. optical waveguide according to claim 15 or 16, which is characterized in that the damp-proof layer (05) includes one or more layers
Sub- damp-proof layer.
18. optical waveguide according to claim 15 or 16, which is characterized in that the damp-proof layer (05) includes following at least one
Kind material：SixN1-x, SiON, Al and Al1-xOx, wherein 0<x<1.
19. optical waveguide according to claim 15 or 16, which is characterized in that the damp-proof layer (05) and the ducting layer
The distance between (06) it is greater than or equal to 1 μm and is less than or equal to 20 μm.
20. optical waveguide according to claim 15 or 16, which is characterized in that the thickness of the damp-proof layer (05) is greater than or waits
In 2nm and it is less than or equal to 200nm.
21. optical waveguide according to claim 15 or 16, which is characterized in that the optical waveguide is the conversion of reversed wedge-shaped die spot
Device.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611019852.0A CN106646736B (en) | 2016-11-18 | 2016-11-18 | Optical waveguide |
| PCT/CN2017/085747 WO2018090593A1 (en) | 2016-11-18 | 2017-05-24 | Optical waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611019852.0A CN106646736B (en) | 2016-11-18 | 2016-11-18 | Optical waveguide |
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| Publication Number | Publication Date |
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| CN106646736B true CN106646736B (en) | 2018-11-16 |
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|---|---|---|---|
| CN201611019852.0A Active CN106646736B (en) | 2016-11-18 | 2016-11-18 | Optical waveguide |
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| WO (1) | WO2018090593A1 (en) |
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|---|---|---|---|---|
| CN106646736B (en) * | 2016-11-18 | 2018-11-16 | 华为机器有限公司 | Optical waveguide |
| WO2023039892A1 (en) * | 2021-09-18 | 2023-03-23 | 华为技术有限公司 | Optical chip and preparation method therefor, and communication device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7039289B1 (en) * | 2000-05-19 | 2006-05-02 | Optinetrics, Inc. | Integrated optic devices and processes for the fabrication of integrated optic devices |
| US7391948B2 (en) * | 2002-02-19 | 2008-06-24 | Richard Nagler | Optical waveguide structure |
| US6937811B2 (en) * | 2002-11-19 | 2005-08-30 | Lumera Corporation | Polymer waveguide devices incorporating electro-optically active polymer clads |
| JP2006030357A (en) * | 2004-07-13 | 2006-02-02 | Bridgestone Corp | Manufacturing method of optical waveguide and the optical waveguide |
| US20100278496A1 (en) * | 2007-09-26 | 2010-11-04 | Masatoshi Yamaguchi | Optical waveguide and method for producing the same |
| US9036956B2 (en) * | 2012-02-17 | 2015-05-19 | Haynes and Boone, LLP | Method of fabricating a polymer waveguide |
| CN106646736B (en) * | 2016-11-18 | 2018-11-16 | 华为机器有限公司 | Optical waveguide |
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| WO2018090593A1 (en) | 2018-05-24 |
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