CN106637407A - Method for preventing melt from falling in growth process of CBO crystals - Google Patents
Method for preventing melt from falling in growth process of CBO crystals Download PDFInfo
- Publication number
- CN106637407A CN106637407A CN201710008604.4A CN201710008604A CN106637407A CN 106637407 A CN106637407 A CN 106637407A CN 201710008604 A CN201710008604 A CN 201710008604A CN 106637407 A CN106637407 A CN 106637407A
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- CN
- China
- Prior art keywords
- crystal
- seed crystal
- melt
- falling
- growth process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/12—Salt solvents, e.g. flux growth
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a method for preventing a melt from falling in the growth process of CBO crystals. According to the method, a seed crystal is packed with a platinum piece, the tail end with the length of 1.8mm of the seed crystal is exposed outside, the tail end with the length of 2mm of the seed crystal is soaked into a melt during the seeding of the crystal, and the junction between the platinum piece and the seed crystal is sealed by virtue of the melt, so that the seed crystal is no longer broken in the growth process of the crystal, and a complete crystal blank is obtained.
Description
Technical field
The invention belongs to a kind of artificial crystal growth field, particularly CBO crystal growths.
Background technology
Cesium triborate（Chemical formula CsB3O5, abbreviation CBO）It is a kind of new nonlinear crystal, nonlinear system in borate
Number is roughly the same with LBO, and ultraviolet band transmittancy is better than BBO, and threshold for resisting laser damage is higher than BBO, is especially prepared in crystal
Upper is congruent compound better than BBO and LBO, CBO, without using additional flux, can effectively reduce flux band
To affect.
Although the crystal has than BBO and LBO better performances in some aspects, the crystal has hygroscopy, with
And growth course volatilization is serious, in crystal growing process, as crystal is grown up, seed crystal easily breaks, and crystal falls into melt, to life
Long perfect crystal brings difficulty.
The content of the invention
The present invention wraps up seed crystal using platinum piece, and seed crystal extreme residual 1.8mm exposes outside, sees Fig. 1, and crystal is sowed process
In, 2mm immersion melts in seed crystal end seal platinized platinum and seed crystal intersection using melt, and the seed crystal that the method makes no longer is exposed to
In air, on the one hand prevent volatile matter from corroding seed crystal, on the other hand prevent seed crystal deliquescence again；So that crystal growing process, seed crystal
No longer break, obtain complete crystal boule.
Description of the drawings
Fig. 1 is seed crystal schematic diagram.
Specific embodiment
It is raw material to weigh a certain amount of cesium carbonate and boric acid, wherein caesium excessive 5%（Molar percentage）, in common Elema
Frit reaction under the conditions of 900 DEG C of stove all melts to raw material, loads the crucibles of φ 60, is then placed in being grown in molten salt furnace, by seed
Brilliant platinized platinum is wrapped up, and seed crystal extreme residual 1.8mm exposes outside, and seed crystal is sowed under the conditions of saturation temperature point is high 5 DEG C, seed crystal leaching
Do not have melt 2mm, then temperature drops back to saturation temperature, start growth, through 3 months perfect crystal was obtained.
Claims (1)
1. a kind of method for preventing CBO crystal growing process from falling into melt it is characterized in that：Seed crystal, seed crystal are wrapped up using platinum piece
Extreme residual 1.8mm exposes outside, and during crystal is sowed, 2mm immersion melts in seed crystal end seal platinized platinum and seed using melt
Brilliant intersection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710008604.4A CN106637407A (en) | 2017-01-06 | 2017-01-06 | Method for preventing melt from falling in growth process of CBO crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710008604.4A CN106637407A (en) | 2017-01-06 | 2017-01-06 | Method for preventing melt from falling in growth process of CBO crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106637407A true CN106637407A (en) | 2017-05-10 |
Family
ID=58843119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710008604.4A Pending CN106637407A (en) | 2017-01-06 | 2017-01-06 | Method for preventing melt from falling in growth process of CBO crystals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106637407A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1073729A (en) * | 1992-04-23 | 1993-06-30 | 中国科学技术大学 | Cesium triborate method for monocrystal growth and with the device for non-linear optical of its making |
| CN1085612A (en) * | 1992-10-10 | 1994-04-20 | 中国科学技术大学 | Cesium triborate method for monocrystal growth and with the device for non-linear optical of its making |
| CN1712576A (en) * | 2004-06-25 | 2005-12-28 | 中国科学院理化技术研究所 | Non-linear optical crystal of cesium rubidium borate, its growth and use |
| CN1896338A (en) * | 2005-07-12 | 2007-01-17 | 中国科学院理化技术研究所 | Growth of tricesium borate monocrystal cosolvent |
| CN105648529A (en) * | 2016-01-25 | 2016-06-08 | 福建福晶科技股份有限公司 | Simple seed crystal reinforcing method |
| WO2016119159A1 (en) * | 2015-01-29 | 2016-08-04 | 上海硅酸盐研究所中试基地 | Method for preparing monocrystalline |
-
2017
- 2017-01-06 CN CN201710008604.4A patent/CN106637407A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1073729A (en) * | 1992-04-23 | 1993-06-30 | 中国科学技术大学 | Cesium triborate method for monocrystal growth and with the device for non-linear optical of its making |
| CN1085612A (en) * | 1992-10-10 | 1994-04-20 | 中国科学技术大学 | Cesium triborate method for monocrystal growth and with the device for non-linear optical of its making |
| CN1712576A (en) * | 2004-06-25 | 2005-12-28 | 中国科学院理化技术研究所 | Non-linear optical crystal of cesium rubidium borate, its growth and use |
| CN1896338A (en) * | 2005-07-12 | 2007-01-17 | 中国科学院理化技术研究所 | Growth of tricesium borate monocrystal cosolvent |
| WO2016119159A1 (en) * | 2015-01-29 | 2016-08-04 | 上海硅酸盐研究所中试基地 | Method for preparing monocrystalline |
| CN105648529A (en) * | 2016-01-25 | 2016-06-08 | 福建福晶科技股份有限公司 | Simple seed crystal reinforcing method |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170510 |
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| WD01 | Invention patent application deemed withdrawn after publication |