CN106637089A - Preparation method of ultraviolet detecting film - Google Patents

Preparation method of ultraviolet detecting film Download PDF

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Publication number
CN106637089A
CN106637089A CN201611229334.1A CN201611229334A CN106637089A CN 106637089 A CN106637089 A CN 106637089A CN 201611229334 A CN201611229334 A CN 201611229334A CN 106637089 A CN106637089 A CN 106637089A
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China
Prior art keywords
preparation
good
substrate
temperature
quartz
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Pending
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CN201611229334.1A
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Chinese (zh)
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不公告发明人
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Suzhou Sichuang Yuanbo Electronic Technology Co Ltd
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Suzhou Sichuang Yuanbo Electronic Technology Co Ltd
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Priority to CN201611229334.1A priority Critical patent/CN106637089A/en
Publication of CN106637089A publication Critical patent/CN106637089A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

The invention discloses a preparation method of an ultraviolet detecting film. The preparation method comprises the following steps of (1) processing a basal piece; (2) putting a certain amount of molybdenum trioxide powder in a quartz boat, flat placing the processed basal piece directly over the quartz boat, putting the quartz boat in a quartz pipe in a high-temperature tubular type oven, and performing sealing; and (3) completely inflating the quartz pipe with inert gas such as argon gas and nitrogen gas to completely discharge air in the quartz pipe, and performing heat treatment so as to obtain a product. The preparation method disclosed by the invention is good in universality, low in equipment requirement and good in repeatability, and can be used for preparation easily; and a composite film prepared by the preparation method disclosed by the invention is good in uniformity and stable in property, and has good photoelectricity sensitivity.

Description

A kind of preparation method of ultraviolet detection film
Technical field
The present invention relates to magnetoelectricity composite functional material field, and in particular to a kind of preparation method of ultraviolet detection film.
Background technology
In recent years transparent conductive oxide film was always the focus of photoelectric field, wherein ito thin film be research at present and Most widely used transparent conductive oxide (TCO) film, because of its good photoelectric characteristic various photoelectricity are widely used in Device, but because the prices of raw materials are expensive, indium resource is rare and to environment, so as to limit its development and application.
Ultraviolet detector is widely used in military affairs, industrial production and daily life as a kind of important photoelectric device Etc. every field, such as ozone monitoring, fire hazard monitoring and missile defense systems；Evaluating the major parameter of detector performance has switch When speed of photoresponse, on-off ratio is bigger, the performance of the faster explanation detector of speed of photoresponse is better, nowadays has been developed for many The ultraviolet detector of material base, such as zno-based ultraviolet detector, GaN base ultraviolet detector, AlGaN base ultraviolet detectors are planted, but Highly sensitive detector is the target that every field is pursued always.
The content of the invention
The present invention provides a kind of preparation method of ultraviolet detection film, and the preparation method universality is good, equipment requirement is low, system Standby simple, reproducible, laminated film uniformity of the invention is good, stable performance, with good with the spirit of good photoelectricity Quick property.
To achieve these goals, the invention provides a kind of preparation method of ultraviolet detection film, the method include as Lower step：
（1）Process substrate
Grinding and polishing and clear silicon chip, it is standby；The grinding and polishing, can be first enterprising in the boart boart wheel disc of 600 mesh by substrate Row corase grind 10min, then carries out fine grinding 10min on the boart boart wheel disc of 1200 mesh, then with the diamond polishing powder of W2.5 , the ultrasonic cleaning uniformly bright to specimen surface is polished, the substrate after grinding and polishing can in the following order be cleaned, third Ketone ultrasonic cleaning 5min → absolute ethyl alcohol ultrasonic cleaning 5min → drying is stand-by, the ion gun cleaning, can adopt Hall ion Source carries out cleaning 5min to substrate, and pressure is 2 × 10-2Pa, underlayer temperature be 300 DEG C, argon gas flux be 10sccm, bias for- 100V, cathode current is 29.5A, and cathode voltage is 19V, and anode current is 7A, and anode voltage is 80V, to remove substrate surface Adsorbed gas and impurity；
（2）A certain amount of molybdenum trioxide powder is placed in quartz boat, and is kept flat directly over quartz boat after above-mentioned process Substrate, quartz boat is placed in the quartz ampoule of high temperature process furnances and is sealed；
（3）The inert gases such as argon gas or nitrogen are passed through in quartz ampoule by the complete emptying of air in pipe；
Setting high temperature process furnances are warming up to 850-900 DEG C with the heating rate of 15-25 DEG C/min, wherein reaching 500 DEG C in temperature After turn throughput down, be incubated 10-15min when temperature reaches 850-900 DEG C, Temperature fall after reaction completely；
Sample is taken out when the temperature of quartz ampoule reaches room temperature, product is obtained.
Specific embodiment
Embodiment one
Grinding and polishing and clear silicon chip, it is standby；The grinding and polishing, can be first enterprising in the boart boart wheel disc of 600 mesh by substrate Row corase grind 10min, then carries out fine grinding 10min on the boart boart wheel disc of 1200 mesh, then with the diamond polishing powder of W2.5 , the ultrasonic cleaning uniformly bright to specimen surface is polished, the substrate after grinding and polishing can in the following order be cleaned, third Ketone ultrasonic cleaning 5min → absolute ethyl alcohol ultrasonic cleaning 5min → drying is stand-by, the ion gun cleaning, can adopt Hall ion Source carries out cleaning 5min to substrate, and pressure is 2 × 10-2Pa, underlayer temperature be 300 DEG C, argon gas flux be 10sccm, bias for- 100V, cathode current is 29.5A, and cathode voltage is 19V, and anode current is 7A, and anode voltage is 80V, to remove substrate surface Adsorbed gas and impurity.
A certain amount of molybdenum trioxide powder is placed in quartz boat, and is kept flat directly over quartz boat after above-mentioned process Substrate, quartz boat is placed in the quartz ampoule of high temperature process furnances and is sealed.
The inert gases such as argon gas or nitrogen are passed through in quartz ampoule by the complete emptying of air in pipe.
Setting high temperature process furnances are warming up to 850 DEG C with the heating rate of 15 DEG C/min, wherein adjusting after temperature reaches 500 DEG C Stingy flow, is incubated 10min, Temperature fall after reaction completely when temperature reaches 850 DEG C；The temperature for treating quartz ampoule reaches room temperature When take out sample, obtain product.
Embodiment two
Grinding and polishing and clear silicon chip, it is standby；The grinding and polishing, can be first enterprising in the boart boart wheel disc of 600 mesh by substrate Row corase grind 10min, then carries out fine grinding 10min on the boart boart wheel disc of 1200 mesh, then with the diamond polishing powder of W2.5 , the ultrasonic cleaning uniformly bright to specimen surface is polished, the substrate after grinding and polishing can in the following order be cleaned, third Ketone ultrasonic cleaning 5min → absolute ethyl alcohol ultrasonic cleaning 5min → drying is stand-by, the ion gun cleaning, can adopt Hall ion Source carries out cleaning 5min to substrate, and pressure is 2 × 10-2Pa, underlayer temperature be 300 DEG C, argon gas flux be 10sccm, bias for- 100V, cathode current is 29.5A, and cathode voltage is 19V, and anode current is 7A, and anode voltage is 80V, to remove substrate surface Adsorbed gas and impurity.
A certain amount of molybdenum trioxide powder is placed in quartz boat, and is kept flat directly over quartz boat after above-mentioned process Substrate, quartz boat is placed in the quartz ampoule of high temperature process furnances and is sealed.
The inert gases such as argon gas or nitrogen are passed through in quartz ampoule by the complete emptying of air in pipe.
Setting high temperature process furnances are warming up to 900 DEG C with the heating rate of 25 DEG C/min, wherein adjusting after temperature reaches 500 DEG C Stingy flow, is incubated 15min, Temperature fall after reaction completely when temperature reaches 900 DEG C；The temperature for treating quartz ampoule reaches room temperature When take out sample, obtain product.

Claims (1)

1. a kind of preparation method of ultraviolet detection film, the preparation method universality is good, equipment requirement is low, it is simple to prepare, repeat Property it is good, the present invention laminated film uniformity is good, stable performance, with good with good photoelectricity sensitivity, for reality Existing above-mentioned purpose, the invention provides a kind of preparation method of ultraviolet detection film, the method comprises the steps：
（1）Process substrate
Grinding and polishing and clear silicon chip, it is standby；The grinding and polishing, can be first enterprising in the boart boart wheel disc of 600 mesh by substrate Row corase grind 10min, then carries out fine grinding 10min on the boart boart wheel disc of 1200 mesh, then with the diamond polishing powder of W2.5 , the ultrasonic cleaning uniformly bright to specimen surface is polished, the substrate after grinding and polishing can in the following order be cleaned, third Ketone ultrasonic cleaning 5min → absolute ethyl alcohol ultrasonic cleaning 5min → drying is stand-by, the ion gun cleaning, can adopt Hall ion Source carries out cleaning 5min to substrate, and pressure is 2 × 10-2Pa, underlayer temperature be 300 DEG C, argon gas flux be 10sccm, bias for- 100V, cathode current is 29.5A, and cathode voltage is 19V, and anode current is 7A, and anode voltage is 80V, to remove substrate surface Adsorbed gas and impurity；
（2）A certain amount of molybdenum trioxide powder is placed in quartz boat, and is kept flat directly over quartz boat after above-mentioned process Substrate, quartz boat is placed in the quartz ampoule of high temperature process furnances and is sealed；
（3）The inert gases such as argon gas or nitrogen are passed through in quartz ampoule by the complete emptying of air in pipe；
Setting high temperature process furnances are warming up to 850-900 DEG C with the heating rate of 15-25 DEG C/min, wherein reaching 500 DEG C in temperature After turn throughput down, be incubated 10-15min when temperature reaches 850-900 DEG C, Temperature fall after reaction completely；
Sample is taken out when the temperature of quartz ampoule reaches room temperature, product is obtained.
CN201611229334.1A 2016-12-27 2016-12-27 Preparation method of ultraviolet detecting film Pending CN106637089A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201611229334.1A CN106637089A (en) 2016-12-27 2016-12-27 Preparation method of ultraviolet detecting film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201611229334.1A CN106637089A (en) 2016-12-27 2016-12-27 Preparation method of ultraviolet detecting film

Publications (1)

Publication Number Publication Date
CN106637089A true CN106637089A (en) 2017-05-10

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101775585A (en) * 2010-02-11 2010-07-14 厦门大学 Preparation method of high hardness zirconium nitride hard coat
CN101820016A (en) * 2010-04-16 2010-09-01 厦门大学 Method for preparing titanium dioxide ultraviolet photoelectric detector
CN105621487A (en) * 2016-03-03 2016-06-01 广东工业大学 Preparation method of molybdenum trioxide thin film and prepared photoelectric device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101775585A (en) * 2010-02-11 2010-07-14 厦门大学 Preparation method of high hardness zirconium nitride hard coat
CN101820016A (en) * 2010-04-16 2010-09-01 厦门大学 Method for preparing titanium dioxide ultraviolet photoelectric detector
CN105621487A (en) * 2016-03-03 2016-06-01 广东工业大学 Preparation method of molybdenum trioxide thin film and prepared photoelectric device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
班冬梅 等: ""三氧化钼纳米带的电致变色机理研究"", 《海南师范大学学报(自然科学版)》 *

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