CN107021750A - A kind of high sensitivity Zinc-oxide piezoresistor - Google Patents
A kind of high sensitivity Zinc-oxide piezoresistor Download PDFInfo
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Abstract
The invention discloses a kind of high sensitivity Zinc-oxide piezoresistor, the specific method for making the piezo-resistance is：Step 1：Piezo-resistance bulk material is prepared, adding the granulation of deionized water ball milling as raw material using zinc oxide, bismuth oxide, antimony oxide, cobaltosic oxide, manganese oxide, nickel sesquioxide is made piezo-resistance bulk material；Step 2：Add noble metal quantum dot；Step 3：Cleaning；Step 4：Roasting；Step 5：Shaping cooling, piezo-resistance bulk material is put into vacuum plant and cooled down, until piezo-resistance bulk material is cooled under room temperature condition, then piezo-resistance bulk material is carried out that ZnO base voltage sensitive resistor chip is made after second of high-temperature roasting, silver ink firing, lead in automatic infiltration soldering, 10 ~ 15min is dried by the product after welding in 100 ~ 150 DEG C of baking oven.A kind of method for improving piezo-resistance sensitivity provided by the present invention, can greatly improve the sensitivity of piezo-resistance, low manufacture cost.
Description
Technical field
The invention belongs to technical field of electronic products, and in particular to a kind of high sensitivity Zinc-oxide piezoresistor.
Background technology
Piezo-resistance is a kind of resistance device with nonlinear wind vibration, is mainly used in entering when circuit bears overvoltage
Row voltage clamping, absorbs unnecessary electric current to protect Sensitive Apparatus.English name is " Voltage Dependent
Resistor " is abbreviated as VDR, or is called " Varistor ".The resistor material of piezoresistor is semiconductor, so it is
One kind of semiconductor resistor." zinc oxide " largely used now（ZnO）Piezoresistor, its material of main part has two
Valency element zinc（Zn）With hexad oxygen（O）Constituted.So from the perspective of material, zinc oxide varistor is a kind of
" II-VI race's oxide semiconductor ".In TaiWan, China, piezoresistor is referred to as " surge absorber " and is otherwise referred to as " surge
（Surge）Suppressor（Absorber）”.
Piezo-resistance is a kind of votage limit type protection device.Using the nonlinear characteristic of piezo-resistance, when overvoltage is appeared in
Two interpolars of piezo-resistance, piezo-resistance can be by voltage clamping to a relatively-stationary magnitude of voltage, so as to realize to rear class
The protection of circuit.The major parameter of piezo-resistance has：Pressure sensitive voltage, discharge capacity, junction capacity, response time etc..
The response time of piezo-resistance is ns grades, faster than gas-discharge tube, slightly slower than TVS pipe, is generally used
In the overvoltage protection of electronic circuit, its response speed can meet requirement.The junction capacity of piezo-resistance is general to arrive thousands of hundreds of
Pf order of magnitude scope, should not be directly applied in the protection of high-frequency signal circuit, apply in alternating current circuit in many cases
When in protection, because its junction capacity increases leakage current compared with conference, need to take into full account when designing protection circuit.Piezo-resistance
Discharge capacity is larger, but smaller than gas-discharge tube.Piezoresistor abbreviation VDR is a kind of to the non-linear excessively electric of voltage-sensitive
Pressure protection semiconductor element.The content of the invention
In view of the above-mentioned problems, the technical problem to be solved in the present invention is to provide a kind of high sensitivity Zinc-oxide piezoresistor.
To achieve the above object, the technical scheme is that：A kind of high sensitivity Zinc-oxide piezoresistor, makes the pressure
The specific method of quick resistance is：
Step 1：Piezo-resistance bulk material is prepared, with zinc oxide, bismuth oxide, antimony oxide, cobaltosic oxide, oxidation
Manganese, nickel sesquioxide are that piezo-resistance bulk material is made in raw material addition deionized water ball milling granulation；
Step 2：Noble metal quantum dot is added, is 2 ~ 10nm noble metals quantum dot in the alcoholic solution that concentration is 50 ~ 60% by particle diameter
After middle 30 ~ 50min of decentralized processing, drip in piezo-resistance bulk material, and ground and stirred with grinder, the noble metal amount
The consumption of son point is the 1.5% ~ 4.5% of piezo-resistance bulk material quality；
Step 3：Cleaning, the piezo-resistance bulk material obtained by step 2 is cleaned in 20 ~ 35min, solution tank in solution tank
Comprising cleaning fluid, the pH value of solution is 3 ~ 5 in solution tank, is again dried piezo-resistance bulk material with dryer after cleaning,
Make its surface noresidue；
Step 4：Roasting, with 600 ~ 1000 DEG C of high-temperature roastings 1 ~ 3 hour in blast furnace；
Step 5：Shaping cooling, piezo-resistance bulk material is put into vacuum plant and cooled down, until piezo-resistance bulk material
It is cooled under room temperature condition, then carries out piezo-resistance bulk material Zinc oxide-base is made after second of high-temperature roasting, silver ink firing
Lead in voltage dependent resistor chip, automatic infiltration soldering, dries 10 ~ 15min, i.e., by the product after welding in 100 ~ 150 DEG C of baking oven
Obtain high sensitivity Zinc-oxide piezoresistor.
Preferably, the raw material in the step 1 is 3 ~ 10 parts of zinc oxide, bismuth oxide 6 ~ 11 according to mass fraction proportioning
Part, 2 ~ 9 parts of antimony oxide, 6 ~ 12 parts of cobaltosic oxide, 5 ~ 10 parts of manganese oxide, 1 ~ 5 part of nickel sesquioxide.
Preferably, decentralized processing is with the ultrasonic wave decentralized processing that frequency is 300000 ~ 40000Hz in the step 2.
Preferably, the cleaning fluid in the step 3 is the sulfuric acid solution of concentration 80% ~ 85%.
Preferably, the vacuum for the vacuum condition that the vacuum plant in the step 5 is kept be 0.02MPa ~
0.12MPa。
Preferably, the grinder in the step 2 is disc grinder or rotary shaft grinder.
Preferably, 80 ~ 110 DEG C of temperature control in the dryer in the step 3.
Preferably, 90 ~ 100 DEG C of temperature control in the dryer in the step 3.
The beneficial effects of the present invention are：A kind of method for improving piezo-resistance sensitivity provided by the present invention, can be with
Greatly improve the sensitivity of piezo-resistance, low manufacture cost is controllable and uniformly and piezo-resistance by the quantum dot of noble metal
Raw material are mixed, and piezo-resistance bulk material is put into cooling in vacuum plant, prevent piezo-resistance raw material in roasting
Easily it is oxidized by oxygen afterwards, harmful material will not be produced in whole technological process, it is economic and environment-friendly.
Embodiment
Embodiment 1
A kind of high sensitivity Zinc-oxide piezoresistor, the specific method for making the piezo-resistance is：
Step 1：Piezo-resistance bulk material is prepared, with zinc oxide, bismuth oxide, antimony oxide, cobaltosic oxide, oxidation
Manganese, nickel sesquioxide are that piezo-resistance bulk material is made in raw material addition deionized water ball milling granulation；
Step 2：Noble metal quantum dot is added, is that 2nm noble metals quantum dot disperses in the alcoholic solution that concentration is 50% by particle diameter
Handle after 30min, drip in piezo-resistance bulk material, and ground and stirred with grinder, the use of the noble metal quantum dot
Measure as the 1.5% of piezo-resistance bulk material quality；
Step 3：Cleaning, the piezo-resistance bulk material obtained by step 2 is cleaned in 20 ~ 35min, solution tank in solution tank
Comprising cleaning fluid, the pH value of solution is 3 in solution tank, again dries piezo-resistance bulk material with dryer after cleaning, makes
Its surface noresidue；
Step 4：Roasting, with 600 DEG C of high-temperature roastings 1 hour in blast furnace；
Step 5：Shaping cooling, piezo-resistance bulk material is put into vacuum plant and cooled down, until piezo-resistance bulk material
It is cooled under room temperature condition, then carries out piezo-resistance bulk material Zinc oxide-base is made after second of high-temperature roasting, silver ink firing
Lead in voltage dependent resistor chip, automatic infiltration soldering, dries 10min in 100 DEG C of baking oven by the product after welding, produces highly sensitive
Property Zinc-oxide piezoresistor.
It is 3 parts of zinc oxide, 6 parts of bismuth oxide, antimony oxide that raw material in the step 1 is matched according to mass fraction
2 parts, 6 parts of cobaltosic oxide, 5 parts of manganese oxide, 1 part of nickel sesquioxide.
The ultrasonic wave decentralized processing that it is 300000Hz with frequency that decentralized processing, which is, in the step 2.
Cleaning fluid in the step 3 is the sulfuric acid solution of concentration 80%.
The vacuum for the vacuum condition that vacuum plant in the step 5 is kept is 0.02MPa.
Grinder in the step 2 is disc grinder or rotary shaft grinder.
80 DEG C of temperature control in dryer in the step 3.
Embodiment 2
A kind of high sensitivity Zinc-oxide piezoresistor, the specific method for making the piezo-resistance is：
Step 1：Piezo-resistance bulk material is prepared, with zinc oxide, bismuth oxide, antimony oxide, cobaltosic oxide, oxidation
Manganese, nickel sesquioxide are that piezo-resistance bulk material is made in raw material addition deionized water ball milling granulation；
Step 2：Noble metal quantum dot is added, is that 10nm noble metals quantum dot divides in the alcoholic solution that concentration is 60% by particle diameter
Dissipate after processing 50min, drip in piezo-resistance bulk material, and ground and stirred with grinder, the noble metal quantum dot
Consumption is the 4.5% of piezo-resistance bulk material quality.
Step 3：Cleaning, 35min, solution tank are cleaned by the piezo-resistance bulk material obtained by step 2 in solution tank
In include cleaning fluid, the pH value of solution is 5 in solution tank, is again dried piezo-resistance bulk material with dryer after cleaning,
Make its surface noresidue；
Step 4：Roasting, with 1000 DEG C of high-temperature roastings 3 hours in blast furnace；
Step 5：Shaping cooling, piezo-resistance bulk material is put into vacuum plant and cooled down, until piezo-resistance bulk material
It is cooled under room temperature condition, then carries out piezo-resistance bulk material Zinc oxide-base is made after second of high-temperature roasting, silver ink firing
Lead in voltage dependent resistor chip, automatic infiltration soldering, dries 15min in 150 DEG C of baking oven by the product after welding, produces highly sensitive
Property Zinc-oxide piezoresistor.
Raw material in the step 1 is matched as 10 parts of zinc oxide, 11 parts of bismuth oxide, three oxidations two according to mass fraction
9 parts of antimony, 12 parts of cobaltosic oxide, 10 parts of manganese oxide, 5 parts of nickel sesquioxide.
The ultrasonic wave decentralized processing that it is 40000Hz with frequency that decentralized processing, which is, in the step 2.
Cleaning fluid in the step 3 is the sulfuric acid solution of concentration 85%.
The vacuum for the vacuum condition that vacuum plant in the step 5 is kept is 0.12MPa.
Grinder in the step 2 is disc grinder or rotary shaft grinder.
110 DEG C of temperature control in dryer in the step 3.
Embodiment 3
A kind of high sensitivity Zinc-oxide piezoresistor, the specific method for making the piezo-resistance is：
Step 1：Piezo-resistance bulk material is prepared, with zinc oxide, bismuth oxide, antimony oxide, cobaltosic oxide, oxidation
Manganese, nickel sesquioxide are that piezo-resistance bulk material is made in raw material addition deionized water ball milling granulation；
Step 2：Noble metal quantum dot is added, is that 8nm noble metals quantum dot disperses in the alcoholic solution that concentration is 50% by particle diameter
Handle after 40min, drip in piezo-resistance bulk material, and ground and stirred with grinder, the use of the noble metal quantum dot
Measure as the 3.5% of piezo-resistance bulk material quality.
Step 3：Cleaning, 30min, solution tank are cleaned by the piezo-resistance bulk material obtained by step 2 in solution tank
In include cleaning fluid, the pH value of solution is 4 in solution tank, is again dried piezo-resistance bulk material with dryer after cleaning,
Make its surface noresidue；
Step 4：Roasting, with 700 DEG C of high-temperature roastings 2 hours in blast furnace；
Step 5：Shaping cooling, piezo-resistance bulk material is put into vacuum plant and cooled down, until piezo-resistance bulk material
It is cooled under room temperature condition, then carries out piezo-resistance bulk material Zinc oxide-base is made after second of high-temperature roasting, silver ink firing
Lead in voltage dependent resistor chip, automatic infiltration soldering, dries 12min in 120 DEG C of baking oven by the product after welding, produces highly sensitive
Property Zinc-oxide piezoresistor.
Raw material in the step 1 is matched as 5 parts of zinc oxide, 10 parts of bismuth oxide, three oxidations two according to mass fraction
5 parts of antimony, 8 parts of cobaltosic oxide, 8 parts of manganese oxide, 3 parts of nickel sesquioxide.
The ultrasonic wave decentralized processing that it is 35000Hz with frequency that decentralized processing, which is, in the step 2.
Cleaning fluid in the step 3 is the sulfuric acid solution of concentration 80%.
The vacuum for the vacuum condition that vacuum plant in the step 5 is kept is 0.08MPa.
Grinder in the step 2 is disc grinder or rotary shaft grinder.
100 DEG C of temperature control in dryer in the step 3.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, although with reference to foregoing reality
Apply example the present invention is described in detail, for those skilled in the art, it still can be to foregoing each implementation
Technical scheme described in example is modified, or carries out equivalent substitution to which part technical characteristic.All essences in the present invention
God is with principle, and any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (8)
1. a kind of high sensitivity Zinc-oxide piezoresistor, it is characterised in that the specific method for making the piezo-resistance is：
Step 1：Piezo-resistance bulk material is prepared, with zinc oxide, bismuth oxide, antimony oxide, cobaltosic oxide, oxidation
Manganese, nickel sesquioxide are that piezo-resistance bulk material is made in raw material addition deionized water ball milling granulation；
Step 2：Noble metal quantum dot is added, is 2 ~ 10nm noble metals quantum dot in the alcoholic solution that concentration is 50 ~ 60% by particle diameter
After middle 30 ~ 50min of decentralized processing, drip in piezo-resistance bulk material, and ground and stirred with grinder, the noble metal amount
The consumption of son point is the 1.5% ~ 4.5% of piezo-resistance bulk material quality；
Step 3：Cleaning, the piezo-resistance bulk material obtained by step 2 is cleaned in 20 ~ 35min, solution tank in solution tank
Comprising cleaning fluid, the pH value of solution is 3 ~ 5 in solution tank, is again dried piezo-resistance bulk material with dryer after cleaning,
Make its surface noresidue；
Step 4：Roasting, with 600 ~ 1000 DEG C of high-temperature roastings 1 ~ 3 hour in blast furnace；
Step 5：Shaping cooling, piezo-resistance bulk material is put into vacuum plant and cooled down, until piezo-resistance bulk material
It is cooled under room temperature condition, then carries out piezo-resistance bulk material Zinc oxide-base is made after second of high-temperature roasting, silver ink firing
Lead in voltage dependent resistor chip, automatic infiltration soldering, dries 10 ~ 15min, i.e., by the product after welding in 100 ~ 150 DEG C of baking oven
Obtain high sensitivity Zinc-oxide piezoresistor.
2. a kind of high sensitivity Zinc-oxide piezoresistor according to claim 1, it is characterised in that in the step 1
Raw material is 3 ~ 10 parts of zinc oxide, 6 ~ 11 parts of bismuth oxide, 2 ~ 9 parts of antimony oxide, four oxidations three according to mass fraction proportioning
6 ~ 12 parts of cobalt, 5 ~ 10 parts of manganese oxide, 1 ~ 5 part of nickel sesquioxide.
3. a kind of high sensitivity Zinc-oxide piezoresistor according to claim 1, it is characterised in that divide in the step 2
Scattered processing is with the ultrasonic wave decentralized processing that frequency is 300000 ~ 40000Hz.
4. a kind of high sensitivity Zinc-oxide piezoresistor according to claim 1, it is characterised in that in the step 3
Cleaning fluid is the sulfuric acid solution of concentration 80% ~ 85%.
5. a kind of high sensitivity Zinc-oxide piezoresistor according to claim 1, it is characterised in that in the step 5
The vacuum for the vacuum condition that vacuum plant is kept is 0.02MPa ~ 0.12MPa.
6. a kind of high sensitivity Zinc-oxide piezoresistor according to claim 1, it is characterised in that in the step 2
Grinder is disc grinder or rotary shaft grinder.
7. a kind of high sensitivity Zinc-oxide piezoresistor according to claim 1, it is characterised in that in the step 3
80 ~ 110 DEG C of temperature control in dryer.
8. a kind of high sensitivity Zinc-oxide piezoresistor according to claim 1, it is characterised in that in the step 3
90 ~ 100 DEG C of temperature control in dryer.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108689700A (en) * | 2018-06-27 | 2018-10-23 | 合肥同佑电子科技有限公司 | A kind of pressure-sensitive ceramic material of high pass current capacity |
| CN108751979A (en) * | 2018-06-27 | 2018-11-06 | 合肥尚强电气科技有限公司 | A method of improving varistor discharge capacity |
| CN108831962A (en) * | 2018-06-27 | 2018-11-16 | 合肥同佑电子科技有限公司 | A method of improving photo resistance sensitivity |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1687999A (en) * | 2005-04-26 | 2005-10-26 | 华东师范大学 | Preparation and application of high-potential gradient zinc oxide piezoresistor material |
| CN1962539A (en) * | 2006-11-30 | 2007-05-16 | 华南理工大学 | Zinc oxide base high potential gradient pressure-sensitive ceramic material and its preparation method and uses |
| CN101585006A (en) * | 2009-06-26 | 2009-11-25 | 上海大学 | Method for improving photocatalysis of metal oxide semiconductor material |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108689700A (en) * | 2018-06-27 | 2018-10-23 | 合肥同佑电子科技有限公司 | A kind of pressure-sensitive ceramic material of high pass current capacity |
| CN108751979A (en) * | 2018-06-27 | 2018-11-06 | 合肥尚强电气科技有限公司 | A method of improving varistor discharge capacity |
| CN108831962A (en) * | 2018-06-27 | 2018-11-16 | 合肥同佑电子科技有限公司 | A method of improving photo resistance sensitivity |
| CN108831962B (en) * | 2018-06-27 | 2020-06-12 | 金华市小狸新材料科技有限责任公司 | Method for improving sensitivity of photoresistor |
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