CN106629589B - A kind of preparation method of the break nano-wire array of fully controllable bending angle - Google Patents
A kind of preparation method of the break nano-wire array of fully controllable bending angle Download PDFInfo
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- CN106629589B CN106629589B CN201710028040.0A CN201710028040A CN106629589B CN 106629589 B CN106629589 B CN 106629589B CN 201710028040 A CN201710028040 A CN 201710028040A CN 106629589 B CN106629589 B CN 106629589B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0009—Forming specific nanostructures
- B82B3/0014—Array or network of similar nanostructural elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Abstract
A kind of preparation method of the break nano-wire array of fully controllable bending angle, comprises the following steps：(1) workpiece of silicon or III V races semi-conducting material is cleaned and dried；(2) individual layer polystyrene (PS) bead is deposited on workpiece, after the diameter for reducing PS beads by reactive ion etching, titanium (Ti) and golden (Au) layer are deposited successively；(3) corresponding etching liquid is configured according to different etching angles, etching liquid can be performed etching along a certain crystal orientation of workpiece；(4) in the etching liquid for putting the workpiece in correspondence start angle, etch period control etching length is passed through；(5) take out after the processing of workpiece cleaning-drying, performed etching in the corresponding etching liquid of the default etching angle of immersion, pass through etch period control etching length；Cleaning-drying processing is carried out after etching；If needing multiple inflection points, repeat step (4) and step (5)；The present invention realizes the break nano-wire array that fully controllable bending angle is formed on workpiece, simple to operate and with low cost.
Description
Technical field
Received the present invention relates to field of IC technique, more particularly to a kind of break of fully controllable bending angle
The preparation method of nanowire arrays.
Background technology
Break semiconductor nanowires have many superior performances, with microelectronic component, microfluidic device, sensor
Prospect is widely applied in.
Preparing the method for conductor nano tube/linear array at present mainly has：Chemical vapour deposition technique (chemical vapor
Deposition, CVD), laser ablation method (laser ablation method), physical vaporous deposition (physical
Vapor deposition, PVD) etc..However, limitation of the chemical vapour deposition technique due to growth mechanism, it usually needs high vacuum
Deng complicated and expensive equipment, so as to cause cost to sharply increase；Laser ablation method and physical vaporous deposition are difficult to prepare
The silicon nanowire array of ordered arrangement.
Metal Assisted Chemical Etching Process method is a kind of catalysis by noble metal, it is big to be prepared under normal temperature and pressure conditionses
The new processing method of area, highly oriented silicon nanowire array.But, due to<100>Direction be etching process in be easiest to
The direction of beginning, the bending silicon nanowire array preparation method that Chinese patent CN102040192B is proposed, can only be to spy
Different crystal orientation<111>Silicon chip is processed, and can be only formed the break of fixed angle, and occurrence is<100>Direction with<111>Direction
Angle, position, quantity and the bending angle of its break etc. are completely uncontrollable；Chinese patent CN102079506B is proposed by changing
Hydrofluoric acid (HF) and silver nitrate (AgNO in etching liquid3) ratio, to prepare bending silicon nanowire array；Due to having in the method
Imitate composition hydrofluoric acid (HF) and hydrogen peroxide (H2O2) immobilize, only by regulation hydrofluoric acid (HF) and hydrogen peroxide
(H2O2) ratio, therefore, it etches direction and can only fixed along along silicon chip<100>With<111>Two crystal orientation etchings, it is produced
Break bending angle it is limited, it is impossible to along other directions etch, such as<112>、<113>Deng direction, it is impossible to control break completely
Bending angle.At present still without a kind of effective workaround for the nano-wire array for preparing fully controllable bending angle, need further
Propose efficient, feasible solution.
The content of the invention
It is an object of the invention to propose a kind of preparation method of the break nano-wire array of complete controllable bending angle, realize
The break nano-wire array of fully controllable bending angle can be formed on workpiece, it is simple to operate and with low cost.
For up to this purpose, the present invention uses following technical scheme：
A kind of preparation method of the break nano-wire array of fully controllable bending angle, comprises the following steps：
(1) workpiece of silicon or III-V group semi-conductor material is cleaned, then dried for standby；
(2) individual layer polystyrene (PS) bead is deposited on the workpiece that step (1) is obtained, and is subtracted by reactive ion etching
The diameter of small PS beads, making the PS beads of original dense arrangement becomes of a relatively loose；Then, titanium is deposited successively in workpiece surface
(Ti) and golden (Au) layer, because PS beads serve the effect of mask, therefore the noble metal of ordered arrangement can be produced on workpiece
Mesh；
(3) corresponding etching liquid is configured according to different etching angles, the etching liquid can be along a certain of the workpiece
Crystal orientation is performed etching, and forms corresponding duct；
(4) workpiece is put into the etching liquid of correspondence start angle and performed etching, control to etch by etch period
Length, with this determination inflection point；
(5) workpiece is taken out, after cleaning-drying is handled, carved in the corresponding etching liquid of the default etching angle of immersion
Erosion, by etch period control etching length, with this determination inflection point；Cleaning-drying processing is carried out after etching；
If desired multiple inflection points, then repeat step (4) and step (5).
Further illustrate, the component of the etching liquid includes：Hydrofluoric acid, oxidant, water and additive, it is added by changing
Plus the material and consumption of agent control the etching liquid to the etching angle of workpiece.
Further illustrate, the cleaning in step (1) is the mixing thermosol that workpiece is placed in the concentrated sulfuric acid and hydrogen peroxide
In liquid, and use deionized water rinsing；The proportioning of the concentrated sulfuric acid and hydrogen peroxide is 1:1, it is described mixing hot solution temperature be
20-70℃；The drying is to be dried using nitrogen.
Further illustrate, the speed that the workpiece is etched is 0.5-5 μm/min.
Further illustrate, the workpiece for being processed as taking out after the completion of etching is cleaned and dried described in step (5) and uses deionization
Water is rinsed well and dried up using nitrogen.
Further illustrate, the etching liquid is stored in closed container, the closed container is polytetrafluoroethylcontainer container.
A kind of preparation method of the break silicon nanowire array of fully controllable bending angle, comprises the following steps：
(1) workpiece of monocrystalline silicon is cleaned, then dried for standby；
(2) individual layer polystyrene (PS) bead is deposited on the workpiece that step (1) is obtained, and is subtracted by reactive ion etching
The diameter of small PS beads, making the PS beads of original dense arrangement becomes of a relatively loose；Then, titanium is deposited successively in workpiece surface
(Ti) and golden (Au) layer, because PS beads serve the effect of mask, therefore the noble metal of ordered arrangement can be produced on workpiece
Mesh；
(3) corresponding etching liquid is configured according to different etching angles, the etching liquid can be along a certain of the workpiece
Crystal orientation is performed etching, and forms corresponding duct；The component of the etching liquid includes hydrofluoric acid, oxidant, water, and different proportion
Additive, it controls the etching liquid by changing the material and consumption of additive to the etching angle of workpiece；
(4) workpiece is put into the etching liquid of correspondence start angle and performed etching, control to etch by etch period
Length, with this determination inflection point；
(5) workpiece is taken out, after cleaning-drying is handled, carved in the corresponding etching liquid of the default etching angle of immersion
Erosion, by etch period control etching length, with this determination inflection point；Cleaning-drying processing is carried out after etching；
If desired multiple inflection points, then repeat step (4) and step (5).
Further illustrate, the additive includes any one in ethanol, ethylene glycol and glycerine.
Beneficial effects of the present invention：Using noble metal as catalyst in preceding processing, and evaporation titanium (Ti) and gold successively
(Au) layer, overcomes the unstability in the past using silver plating solution pre-treatment；And it is big according to the bending angle of required break nano wire
It is small, the composition and ratio of etching liquid are designed, the viscosity and surface tension of etching liquid is controlled, so as to control etching direction being capable of edge<
100>、<111>、<112>、<113>Deng other directions etching, with formed can fine adjustable bending angle break；And pass through control
The replacing number of times of etching liquid controls the quantity of break；Nano wire between every two break is controlled by controlling each etch period
Length, so as to prepare fully controllable nano wire on workpiece；Effectively overcome in silicon or III-V group semi-conductor material
The difficulty of the upper break nano-wire array for forming fully controllable bending angle；This method is simple to operate, low for equipment requirements, and cost is low
It is honest and clean, available for producing in enormous quantities；Have in micro-fluidic device, biological devices, microelectronic component and sensor before
Scape and there is larger popularization space.
Brief description of the drawings
Fig. 1 is the structural representation after deposition polystyrene (PS) bead on the workpiece of one embodiment of the invention；
Fig. 2 is the structural representation of evaporated metal layer on the workpiece of one embodiment of the invention；
Fig. 3 is the workpiece and the structural representation of the nano wire produced after etching liquid A reactions of one embodiment of the invention；
Fig. 4 is the workpiece and etching liquid B of one embodiment of the invention1The structural representation of the nano wire produced after reaction；
Fig. 5 is the workpiece and the structural representation of the nano wire produced after etching liquid A reactions of one embodiment of the invention；
Fig. 6 is the workpiece and etching liquid B of one embodiment of the invention2The structural representation of the nano wire produced after reaction；
Fig. 7 is the workpiece and the structural representation of the nano wire produced after etching liquid A reactions of one embodiment of the invention；
Fig. 8 is that the obtained different length of workpiece of one embodiment of the invention and the structure of nano-wire array of bending angle are shown
It is intended to；
Fig. 9 is the workpiece and the structural representation of the nano wire produced after etching liquid A reactions of one embodiment of the invention；
Figure 10 is the workpiece and etching liquid B of one embodiment of the invention3The structural representation of the nano wire produced after reaction；
Figure 11 is the workpiece and the structural representation of the nano wire produced after etching liquid A reactions of one embodiment of the invention；
Figure 12 be one embodiment of the invention the obtained equal length of workpiece and bending angle nano-wire array structure
Schematic diagram；
Wherein, 1- Silicon Wafers；2-PS beads；3- metal levels；4- nano wires.
Embodiment
Further illustrate technical scheme below in conjunction with the accompanying drawings and by embodiment.
A kind of preparation method of the break nano-wire array of fully controllable bending angle, comprises the following steps：
(1) workpiece of silicon or III-V group semi-conductor material is cleaned, then dried for standby；
(2) individual layer polystyrene (PS) bead is deposited on the workpiece that step (1) is obtained, and is subtracted by reactive ion etching
The diameter of small PS beads, making the PS beads of original dense arrangement becomes of a relatively loose；Then, titanium is deposited successively in workpiece surface
(Ti) and golden (Au) layer, because PS beads serve the effect of mask, therefore the noble metal of ordered arrangement can be produced on workpiece
Mesh；
(3) corresponding etching liquid is configured according to different etching angles, the etching liquid can be along a certain of the workpiece
Crystal orientation is performed etching, and forms corresponding duct；
(4) workpiece is put into the etching liquid of correspondence start angle and performed etching, control to etch by etch period
Length, with this determination inflection point；
(5) workpiece is taken out, after cleaning-drying is handled, carved in the corresponding etching liquid of the default etching angle of immersion
Erosion, by etch period control etching length, with this determination inflection point；Cleaning-drying processing is carried out after etching；
If desired multiple inflection points, then repeat step (4) and step (5).
The invention provides a kind of preparation method of the break nano-wire array of fully controllable bending angle, wherein in preceding processing
In using noble metal as catalyst, and evaporation titanium (Ti) and golden (Au) layer successively overcomes use silver plating solution pre-treatment in the past
Unstability；And according to the bending angle size of required break nano wire, the composition and ratio of etching liquid are designed, etching liquid is controlled
Viscosity and surface tension so that control etching direction being capable of edge<100>、<111>、<112>、<113>Deng other directions etching,
With formed can fine adjustable bending angle break；And by controlling the replacing number of times of etching liquid to control the quantity of break；Pass through
The each etch period of control controls the length of nano wire between every two break, so as to prepare fully controllable receive on workpiece
Rice noodles；Effectively overcome the break nano-wire array that fully controllable bending angle is formed on silicon or III-V group semi-conductor material
Difficulty；This method is simple to operate, low for equipment requirements, with low cost, available for producing in enormous quantities；In micro-fluidic device, life
There is wide application prospect in sundries part, microelectronic component and sensor and have larger popularization space.
Further illustrate, the component of the etching liquid includes：Hydrofluoric acid, oxidant, water and additive, it is added by changing
Plus the material and consumption of agent control the etching liquid to the etching angle of workpiece.The etching liquid controls the curved of break nano wire
Knuckle size, is main composition and ratio by changing the additive in the etching liquid, come control the viscosity of etching liquid with
Surface tension, i.e., determine the formula of etching liquid according to required bending angle, so as to reach the size of effectively control bending angle.
Further illustrate, the cleaning in step (1) is the mixing thermosol that workpiece is placed in the concentrated sulfuric acid and hydrogen peroxide
In liquid, and use deionized water rinsing；The proportioning of the concentrated sulfuric acid and hydrogen peroxide is 1:1, it is described mixing hot solution temperature be
20-70℃；The drying is to be dried using nitrogen.The concentrated sulfuric acid in the mixing hot solution of the concentrated sulfuric acid and hydrogen peroxide
With hydrogen peroxide according to 1:1 is matched, and ensure that workpiece surface oxide is fully removed, it is to avoid the impurity of residual is to etching
The influence of effect.
Further illustrate, the speed that the workpiece is etched is 0.5-5 μm/min.The nanowire length of required formation is removed
It is corroded speed with its workpiece, then can obtains etching time；The speed that is corroded of the workpiece be by Control of chemical reaction, it is excellent
It is 0.5-5 μm/min to select its speed being etched, so that the action time of each road etching procedure thus can be calculated.
Further illustrate, the workpiece for being processed as taking out after the completion of etching is cleaned and dried described in step (5) and uses deionization
Water is rinsed well and dried up using nitrogen.
Further illustrate, the etching liquid is stored in closed container, the closed container is polytetrafluoroethylcontainer container.For
Prevent the hydrofluoric acid in etching liquid from volatilizing and change its concentration, therefore the etching liquid needs to be contained with closed container, and
Polytetrafluoroethylcontainer container has corrosion resistance and good, the etching liquid can be made preferably to store standby.
A kind of preparation method of the break silicon nanowire array of fully controllable bending angle, comprises the following steps：
(1) workpiece of monocrystalline silicon is cleaned, then dried for standby；
(2) individual layer polystyrene (PS) bead is deposited on the workpiece that step (1) is obtained, and is subtracted by reactive ion etching
The diameter of small PS beads, making the PS beads of original dense arrangement becomes of a relatively loose；Then, titanium is deposited successively in workpiece surface
(Ti) and golden (Au) layer, because PS beads serve the effect of mask, therefore the noble metal of ordered arrangement can be produced on workpiece
Mesh；
(3) corresponding etching liquid is configured according to different etching angles, the etching liquid can be along a certain of the workpiece
Crystal orientation is performed etching, and forms corresponding duct；The component of the etching liquid includes hydrofluoric acid, oxidant, water, and different proportion
Additive, it controls the etching liquid by changing the material and consumption of additive to the etching angle of workpiece；
(4) workpiece is put into the etching liquid of correspondence start angle and performed etching, control to etch by etch period
Length, with this determination inflection point；
(5) workpiece is taken out, after cleaning-drying is handled, carved in the corresponding etching liquid of the default etching angle of immersion
Erosion, by etch period control etching length, with this determination inflection point；Cleaning-drying processing is carried out after etching；
If desired multiple inflection points, then repeat step (4) and step (5).
In the nano-wire array etching of monocrystalline silicon, by experiment it can be found that needing constantly to change in existing etching liquid
Become H2O2With HF ratio, and if H2O2Ratio it is too high, then can cause nanowire sidewalls over oxidation, so as to form porous knot
Structure, makes the problem of nano wire is easily snapped off；And a kind of break silicon nanowire array of fully controllable bending angle proposed by the present invention
Preparation method, wherein the etching liquid can avoid above mentioned problem completely, because the H in the etching liquid2O2With hydrofluoric acid
Ratio is constant, and wherein hydrofluoric acid, oxidant, the proportioning of water are 1:5:10；Only need to the ratio by changing the additive
Example and composition, make different etching liquids, the additive can effectively control the viscosity and surface tension of etching liquid, and can
Make the more equal stabilization of pore passage structure of etching, so that the effectively bending angle of the etching of control etching liquid, then by etching liquid
Change number of times to control to bend quantity, the position that it bends is controlled by etch period, it is achieved thereby that the bending angle of etching can be with
Fully controllable.
Further illustrate, the additive includes any one in ethanol, ethylene glycol and glycerine.
The nano-wire array of the different lengths of embodiment 1- mono- difference bending angle, including following preparation method：
(1) pre-treatment is etched：Be 4 cun by size, doping type be p-type, resistivity be 1-10 Ω * cm,<100>Crystal orientation
It is 1 that monocrystalline silicon wafer crystal, which is placed in the concentrated sulfuric acid (mass concentration is 96%) and hydrogen peroxide (mass concentration is 30%) volume ratio,:1 it is mixed
Close 120 DEG C of hot solutions to soak 10 minutes, fully to remove workpiece surface oxide；Then workpiece is taken out from solution, with big
Amount deionized water is rinsed well；It is dried again with nitrogen stream；Taken out after drying standby；
(2) photoetching process formation mask：Individual layer diameter about 500nm individual layer polyphenyl is deposited on the silicon chip that step (1) is obtained
Ethene (PS) bead, and by reactive ion etching (RIE) 2-3 minutes, the diameter of bead is reduced to 200nm, make original cause
The PS beads of solid matter row become of a relatively loose, as shown in Figure 1；3nm titaniums (Ti) are deposited successively then at the monocrystalline silicon piece upper surface
Golden (Au) with 30nm, evaporation time is about 30 minutes, as shown in Figure 2；, therefore, can because PS beads serve the effect of mask
Generation ordered arrangement, the noble metal mesh that aperture is 200nm on monocrystalline silicon piece；
(3) etching liquid is prepared：
Etching liquid A (being formulated by deionized water 20ml, hydrogen peroxide 2ml, hydrofluoric acid 10ml) is prepared, first is added to
In individual polytetrafluoroethylcontainer container；
Etching liquid B is prepared according to required 25.2 ° of bending angle1(by deionized water 20ml, hydrogen peroxide 2ml, hydrofluoric acid
10ml and glycerine 2.5ml are formulated), it is added in second polytetrafluoroethylcontainer container；
Etching liquid B is prepared according to required 54.7 ° of bending angle2(by deionized water 20ml, hydrogen peroxide 2ml, hydrofluoric acid
10ml and glycerine volume 10ml are formulated), it is added in all three polytetrafluoroethylcontainer containers；
(4) etching liquid A is etched：It will be processed in the silicon chip obtained in step (2) immersion etching liquid A, and according to length
L1Etch period t is determined with 2.5 μm/min of etching speed1, as shown in Figure 3；The silicon chip extracting obtained after the completion of etching, and spend
Ionized water is rinsed well, dried up with nitrogen；
(5) etching liquid B1Etching：The silicon chip immersion etching liquid B that step (4) is obtained1In be processed, continue nano wire
Extend in another direction, form break (nano wire of bending once), and according to bending length L2With 0.5 μm/min of etching speed
Determine etch period t2, as shown in Figure 4；The silicon chip extracting obtained after the completion of etching, and rinsed well with deionized water, use nitrogen
Drying；
(6) etching liquid A is etched：In the silicon chip immersion etching liquid A that step (5) is obtained, continue to etch extension nano wire, newly
The nano wire etched bends once (nano wire of bending twice) again, and according to length L3Determined with 3 μm/min of etching speed
Etch period t3, as shown in Figure 5；The silicon chip extracting obtained after the completion of etching, and rinsed well with deionized water, blown with nitrogen
It is dry；
(7) etching liquid B2Etching：The silicon chip immersion etching liquid B that step (6) is obtained2In be processed, etching extension nanometer
Line, the nano wire newly etched is bent once (nano wire that bending is three times) again, and according to bending length L4With etching speed 1.5
μm/min determines etch period t4, as shown in Figure 6；The silicon chip extracting obtained after the completion of etching, and rinsed well with deionized water,
Dried up with nitrogen；
(8) etching liquid A is etched：In the silicon chip immersion etching liquid A that step (7) is obtained, and according to length L5With etching speed
5 μm/min of degree determines etch period t5, as shown in Figure 7；
(9) silicon chip that taking-up step (8) etching is completed is rinsed well with deionized water, nitrogen is dried up, you can on workpiece
Required break nano-wire array is obtained, as shown in Figure 8.
The nano-wire array of the same bending angle of the same length of embodiment 2-, including following preparation method：
(1) pre-treatment is etched：Be 4 cun by size, doping type be p-type, resistivity be 1-10 Ω * cm,<100>Crystal orientation
It is 1 that monocrystalline silicon wafer crystal, which is placed in the concentrated sulfuric acid (mass concentration is 96%) and hydrogen peroxide (mass concentration is 30%) volume ratio,:1 it is mixed
Close 120 DEG C of hot solutions to soak 12 minutes, fully to remove workpiece surface oxide；Then workpiece is taken out from solution, with big
Amount deionized water is rinsed well；It is dried again with nitrogen stream；Taken out after drying standby；
(2) photoetching process formation mask：Individual layer diameter about 500nm individual layer polyphenyl is deposited on the silicon chip that step (1) is obtained
Ethene (PS) bead, and by reactive ion etching (RIE) 2-3 minutes, the diameter of bead is reduced to 200nm, make original cause
The PS beads of solid matter row become of a relatively loose；3nm titaniums (Ti) are deposited successively then at monocrystalline silicon piece upper surface and 30nm is golden (Au), steam
The plating time is about 30 minutes, because PS beads serve the effect of mask, therefore, can be produced on monocrystalline silicon piece ordered arrangement,
Aperture is 200nm noble metal mesh；
(3) etching liquid is prepared：
Etching liquid A (being formulated by deionized water 20ml, hydrogen peroxide 2ml, hydrofluoric acid 10ml) is prepared, first is added to
In individual polytetrafluoroethylcontainer container；
Etching liquid B is prepared according to required 35.2 ° of bending angle3(by deionized water 20ml, hydrogen peroxide 2ml, hydrofluoric acid
10ml and glycerine 5ml are formulated), it is added in another polytetrafluoroethylcontainer container；
(4) etching liquid A is etched：It will be processed in the silicon chip obtained in step (2) immersion etching liquid A, and according to length
L1Etch period t is determined with 2.5 μm/min of etching speed1, the silicon chip extracting obtained after the completion of etching, and use deionized water rinsing
Totally, dried up with nitrogen；
(5) etching liquid B3Etching：The silicon chip immersion etching liquid B that step (4) is obtained3In, and according to bending length L2And quarter
Erosion 3.5 μm/min of speed determines etch period t2, the silicon chip extracting obtained after the completion of etching, and rinsed well with deionized water,
Dried up with nitrogen；
(6) etching liquid A is etched：Then, silicon chip step (5) obtained is immersed in etching liquid A, etch period and step 4
In it is identical, be t1, length is obtained for L1Another section of nano wire, as shown in Figure 9；The silicon chip extracting obtained after the completion of etching, is used in combination
Deionized water rinsing is clean, dried up with nitrogen；
(7) etching liquid B3Etching：The silicon chip immersion etching liquid B that step (6) is obtained3In, etch period is identical with step 5,
For t2, obtain bending length L2Another section of nano wire, as shown in Figure 10；The silicon chip extracting obtained after the completion of etching, and spend from
Sub- water is rinsed well, dried up with nitrogen；
(8) etching liquid A is etched：In the silicon chip immersion etching liquid A that step (7) is obtained, etch period and step 4 and step
It is identical in 6, it is t1, length is obtained for L1Another section of nano wire, as shown in figure 11；
(9) silicon chip that taking-up step (8) etching is completed is rinsed well with deionized water, nitrogen is dried up, you can on workpiece
Required break nano-wire array is obtained, as shown in figure 12.
The technical principle of the present invention is described above in association with specific embodiment.These descriptions are intended merely to explain the present invention's
Principle, and limiting the scope of the invention can not be construed in any way.Based on explanation herein, the technology of this area
Personnel, which would not require any inventive effort, can associate other embodiments of the present invention, and these modes are fallen within
Within protection scope of the present invention.
Claims (5)
1. a kind of preparation method of the break nano-wire array of fully controllable bending angle, it is characterised in that：Comprise the following steps：
(1) workpiece of silicon or III-V group semi-conductor material is cleaned, then dried for standby；
(2) individual layer polystyrene (PS) bead is deposited on the workpiece that step (1) is obtained, and PS is reduced by reactive ion etching
The diameter of bead, making the PS beads of original dense arrangement becomes of a relatively loose；Then, titanium (Ti) is deposited successively in workpiece surface
With golden (Au) layer, because PS beads serve the effect of mask, therefore the noble metal mesh of ordered arrangement can be produced on workpiece；
(3) corresponding etching liquid is configured according to different etching angle, the etching liquid can along the workpiece a certain crystal orientation
Perform etching, form corresponding duct；
(4) workpiece is put into the etching liquid of correspondence start angle and performed etching, by etch period control etching length,
With this determination inflection point；
(5) workpiece is taken out, after cleaning-drying is handled, performed etching in the corresponding etching liquid of the default etching angle of immersion,
By etch period control etching length, with this determination inflection point, formed can fine adjustable bending angle break, progress after etching
Cleaning-drying processing；
If desired multiple inflection points, then repeat step (4) and step (5)；
The component of the etching liquid includes：Hydrofluoric acid, oxidant, water and additive, its material and use by changing additive
Measure to control the etching liquid to the etching angle of workpiece；The additive is glycerine.
2. a kind of preparation method of the break nano-wire array of fully controllable bending angle according to claim 1, its feature
It is：The cleaning in step (1) uses deionization to be placed in workpiece in the mixing hot solution of the concentrated sulfuric acid and hydrogen peroxide
Water is rinsed；The proportioning of the concentrated sulfuric acid and hydrogen peroxide is 1:1, the temperature of the mixing hot solution is 20-70 DEG C；The drying
To be dried using nitrogen.
3. a kind of preparation method of the break nano-wire array of fully controllable bending angle according to claim 1, its feature
It is：The speed that the workpiece is etched is 0.5-5 μm/min.
4. a kind of preparation method of the break nano-wire array of fully controllable bending angle according to claim 1, its feature
It is：The workpiece for being processed as taking out after the completion of etching is cleaned and dried described in step (5) to use deionized water rinsing clean and adopt
Dried up with nitrogen.
5. a kind of preparation method of the break nano-wire array of fully controllable bending angle according to claim 1, its feature
It is：The etching liquid is stored in closed container, and the closed container is polytetrafluoroethylcontainer container.
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Non-Patent Citations (1)
| Title |
|---|
| Effect of Catalyst Shape and Etchant Composition on Etching Direction in Metal-Assisted Chemical Etching of Silicon to Fabricate 3D Nanostructures.;Owen James Hildreth, Wen Lin, and Ching Ping Wong.;《ACS NANO》;20091202;第3卷(第12期);第4033-4042页 * |
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