CN106625200A - Correction method for grinding configuration information and wafer grinding system - Google Patents
Correction method for grinding configuration information and wafer grinding system Download PDFInfo
- Publication number
- CN106625200A CN106625200A CN201611170698.7A CN201611170698A CN106625200A CN 106625200 A CN106625200 A CN 106625200A CN 201611170698 A CN201611170698 A CN 201611170698A CN 106625200 A CN106625200 A CN 106625200A
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- CN
- China
- Prior art keywords
- grinding
- grinding head
- wafer
- configuration information
- bearing calibration
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
Abstract
The invention relates to the technical field of semiconductors, in particular to a correction method for grinding configuration information. The correction method comprises the steps that 1, work of corresponding grinding heads is controlled according to the grinding configuration information in all storage units; 2, the working conditions of all the grinding heads are monitored by group; 3, the grinding head having problems in a group of grinding heads is found out according to the monitoring conditions; 4, the grinding configuration information in the storage unit corresponding to the grinding head having the problems is corrected. The invention further provides a wafer grinding system applying the correction method. According to the technical scheme, the grinding configuration information of the grinding head having the problems can be corrected independently, the trouble of replacing the grinding head by stopping a machine is omitted, the wafer failure condition is reduced, and then the capacity of the wafer grinding system is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of grinding configuration information bearing calibration and wafer grind
Grinding system.
Background technology
In existing grinding wafer system, each grinding wafer system includes a grinding head, and multiple grinding heads form one group
, when every group of grinding head work produces one group of grinding data, often there are one or more grinding heads because its table in grinding head
The difference of face pattern so that its corresponding grinding data deviates considerably from normal value, and existing way is present in a grinding head
There will be the wafer after the grinding head grinding of problem in the case of problem and be judged to failure, in multiple grinding heads feelings of problems
Under condition, need to shut down and grinding head of problems is changed.Do so can cause qualified wafer to reduce, to grinding wafer
The production capacity of system produces large effect.
The content of the invention
For the problems referred to above, the present invention proposes a kind of bearing calibration of grinding configuration information, is applied to grinding wafer system
System, each described grinding wafer system includes one group of grinding head, the quantity of grinding head described in grinding head described in one group for multiple,
The grinding wafer system also includes multiple memory cell, and the grinding configuration information of each grinding head is stored in correspondence
The memory cell in；The bearing calibration includes：
Step S1, the grinding configuration information in each described memory cell controls the corresponding grinding head
Work；
Step S2, is monitored by group to the working condition of grinding head each described；
Step S3, the grinding head of problems in the grinding head according to monitoring situation finds a group；
Step S4, enters to the grinding configuration information in the corresponding memory cell of the grinding head of problems
Row correction.
Above-mentioned bearing calibration, wherein, the quantity of grinding head described in grinding head described in one group is 4.
Above-mentioned bearing calibration, wherein, step S2 is specially：
Collect the data of the surface topography of the wafer of each grinding head grinding in grinding head described in a group.
Above-mentioned bearing calibration, wherein, step S3 is specially：
Find the corresponding grinding head of the wafer that the surface topography reflected in the data has differences.
Above-mentioned bearing calibration, wherein, the grinding wafer system also includes a grinding pad, and the wafer is placed on described
On grinding pad, the grinding head is located at wafer top；
The grinding head is subject to the stress towards the crystal column surface, to grind to the wafer on the grinding pad
Mill.
Above-mentioned bearing calibration, wherein, the grinding configuration information includes lapping liquid proportioning and lapping liquid title.
Above-mentioned bearing calibration, wherein, the grinding wafer system also includes an operation interface, the operation interface and institute
Each described memory cell connection is stated, so that operating personnel carry out school to the grinding configuration information in the memory cell
Just.
A kind of grinding wafer system, application bearing calibration as above described in any one.
Beneficial effect：A kind of bearing calibration of grinding configuration information proposed by the present invention and the crystalline substance using the bearing calibration
Circle grinding system, independently can be corrected to the grinding configuration information of grinding head of problems, change so as to remove from shutting down
The trouble of grinding head, and the situation of wafer failure is reduced, and then improve the production capacity of grinding wafer system.
Description of the drawings
Fig. 1 is the step of bearing calibration of configuration information is ground in one embodiment of the invention flow chart.
Specific embodiment
The present invention is further described with reference to the accompanying drawings and examples.
In a preferred embodiment, as shown in Figure 1, it is proposed that a kind of bearing calibration of grinding configuration information, application
In grinding wafer system, each grinding wafer system includes one group of grinding head, in one group of grinding head the quantity of grinding head for multiple,
Grinding wafer system also includes multiple memory cell, and the grinding configuration information of each grinding head is stored in corresponding memory cell
In；Bearing calibration can include：
Step S1, the grinding configuration information in each memory cell controls the work of corresponding grinding head；
Step S2, is monitored by group to the working condition of each grinding head；
Step S3, according to monitoring situation grinding head of problems in one group of grinding head is found；
Step S4, is corrected to the grinding configuration information in the corresponding memory cell of grinding head of problems.
In a preferred embodiment, the quantity of grinding head is 4 in one group of grinding head.
In a preferred embodiment, step S2 is specially：
Collect the data of the surface topography of the wafer of each grinding head grinding in one group of grinding head.
In above-described embodiment, it is preferable that step S3 is specially：
Find the corresponding grinding head of wafer that the surface topography reflected in data has differences.
In a preferred embodiment, grinding wafer system also includes a grinding pad, and wafer is placed on grinding pad, grinds
Bistrique is located at wafer top；
Grinding head is subject to the stress towards crystal column surface, to be ground to the wafer on grinding pad.
In a preferred embodiment, grinding configuration information includes lapping liquid proportioning and lapping liquid title.
In a preferred embodiment, grinding wafer system also includes an operation interface, and operation interface is stored with each
Unit connects, so that operating personnel are corrected to the grinding configuration information in memory cell.
In a preferred embodiment, a kind of grinding wafer system is additionally provided, using as above any one embodiment
In bearing calibration.
In sum, a kind of bearing calibration of grinding configuration information proposed by the present invention and the crystalline substance using the bearing calibration
Circle grinding system, independently the grinding configuration information of grinding head of problems can be corrected, so as to remove from shut down and more
The trouble of grinding head is changed, and reduces the situation of wafer failure, and then improve the production capacity of grinding wafer system.
By explanation and accompanying drawing, the exemplary embodiments of the ad hoc structure of specific embodiment are given, based on essence of the invention
God, can also make other conversions.Although foregoing invention proposes existing preferred embodiment, however, these contents are not intended as
Limitation.
For a person skilled in the art, read after described above, various changes and modifications undoubtedly will be evident that.
Therefore, appending claims should regard the whole variations and modifications for covering the true intention and scope of the present invention as.In power
Any and all scope of equal value and content, are all considered as still belonging to the intent and scope of the invention in the range of sharp claim.
Claims (8)
1. a kind of bearing calibration of grinding configuration information, is applied to grinding wafer system, and each described grinding wafer system includes
One group of grinding head, the quantity of grinding head described in grinding head described in one group is multiple, it is characterised in that the grinding wafer system
Also include multiple memory cell, the grinding configuration information of each grinding head is stored in the corresponding memory cell
In；The bearing calibration includes：
Step S1, the grinding configuration information in each described memory cell controls the work of the corresponding grinding head
Make；
Step S2, is monitored by group to the working condition of grinding head each described；
Step S3, the grinding head of problems in the grinding head according to monitoring situation finds a group；
Step S4, to the grinding configuration information in the corresponding memory cell of the grinding head of problems school is carried out
Just.
2. bearing calibration according to claim 1, it is characterised in that the quantity of grinding head described in grinding head described in one group
For 4.
3. bearing calibration according to claim 1, it is characterised in that step S2 is specially：
Collect the data of the surface topography of the wafer of each grinding head grinding in grinding head described in a group.
4. bearing calibration according to claim 3, it is characterised in that step S3 is specially：
Find the corresponding grinding head of the wafer that the surface topography reflected in the data has differences.
5. bearing calibration according to claim 1, it is characterised in that the grinding wafer system also includes a grinding pad,
The wafer is placed on the grinding pad, and the grinding head is located at wafer top；
The grinding head is subject to the stress towards the crystal column surface, to be ground to the wafer on the grinding pad.
6. bearing calibration according to claim 1, it is characterised in that the grinding configuration information include lapping liquid proportioning and
Lapping liquid title.
7. bearing calibration according to claim 1, it is characterised in that the grinding wafer system also includes an operation circle
Face, the operation interface is connected with described each described memory cell, so that operating personnel are to described in the memory cell
Grinding configuration information is corrected.
8. a kind of grinding wafer system, it is characterised in that bearing calibration of the application as described in claim 1～7 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611170698.7A CN106625200A (en) | 2016-12-16 | 2016-12-16 | Correction method for grinding configuration information and wafer grinding system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611170698.7A CN106625200A (en) | 2016-12-16 | 2016-12-16 | Correction method for grinding configuration information and wafer grinding system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106625200A true CN106625200A (en) | 2017-05-10 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611170698.7A Pending CN106625200A (en) | 2016-12-16 | 2016-12-16 | Correction method for grinding configuration information and wafer grinding system |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1813340A (en) * | 2003-07-02 | 2006-08-02 | 株式会社荏原制作所 | Polishing apparatus and polishing method |
| CN102380815A (en) * | 2010-09-01 | 2012-03-21 | 无锡华润上华半导体有限公司 | Chemical mechanical grinding method and chemical mechanical grinding system |
| CN102540895A (en) * | 2012-02-28 | 2012-07-04 | 中国科学院微电子研究所 | Advanced process control system and test method thereof |
| CN102956521A (en) * | 2011-08-17 | 2013-03-06 | 台湾积体电路制造股份有限公司 | Apparatus and methods for real-time error detection in cmp processing |
| US20130268106A1 (en) * | 2012-02-29 | 2013-10-10 | Ebara Corporation | Remote monitoring system for polishing end point detection units |
| CN103962935A (en) * | 2013-02-04 | 2014-08-06 | 台湾积体电路制造股份有限公司 | High-throughput cmp platform |
-
2016
- 2016-12-16 CN CN201611170698.7A patent/CN106625200A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1813340A (en) * | 2003-07-02 | 2006-08-02 | 株式会社荏原制作所 | Polishing apparatus and polishing method |
| CN102380815A (en) * | 2010-09-01 | 2012-03-21 | 无锡华润上华半导体有限公司 | Chemical mechanical grinding method and chemical mechanical grinding system |
| CN102956521A (en) * | 2011-08-17 | 2013-03-06 | 台湾积体电路制造股份有限公司 | Apparatus and methods for real-time error detection in cmp processing |
| CN102540895A (en) * | 2012-02-28 | 2012-07-04 | 中国科学院微电子研究所 | Advanced process control system and test method thereof |
| US20130268106A1 (en) * | 2012-02-29 | 2013-10-10 | Ebara Corporation | Remote monitoring system for polishing end point detection units |
| CN103962935A (en) * | 2013-02-04 | 2014-08-06 | 台湾积体电路制造股份有限公司 | High-throughput cmp platform |
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170510 |