CN1981992A - Method for automatically adjusting silicon wafer grinding pressure of chemical-mechanical polisher - Google Patents
Method for automatically adjusting silicon wafer grinding pressure of chemical-mechanical polisher Download PDFInfo
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- CN1981992A CN1981992A CNA2005101115535A CN200510111553A CN1981992A CN 1981992 A CN1981992 A CN 1981992A CN A2005101115535 A CNA2005101115535 A CN A2005101115535A CN 200510111553 A CN200510111553 A CN 200510111553A CN 1981992 A CN1981992 A CN 1981992A
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- retainer ring
- pressure
- grinding
- thickness
- chemical
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 31
- 239000010703 silicon Substances 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000005299 abrasion Methods 0.000 claims description 2
- 238000005498 polishing Methods 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
Abstract
A method for automatically regulating the grinding pressure of chemicomechanical polishing machine to silicon wafer includes such steps as installing a pressure sensor in HCLU, installing a new retainer ring, setting up the thickness value of said retainer ring, turning the grinding head to a position above HCLU, measuring and automatically recording the pressure value on the new retainer ring, beginning to grind, unloading the silicon wafer while measuring the thickness of retainer ring, calculating the compensating value of pressure according to difference in thickness, and regulating pressure.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit and make chemically mechanical polishing (CMP) technology in field, particularly a kind of method of automatic adjusting CMP equipment silicon wafer grinding pressure.
Background technology
Be applied to integrated circuit at present and make on the CMP equipment in field, in order to enlarge effective field of silicon chip, when silicon chip grinding, keeping the retainer ring (retainer ring) of silicon chip all is contact with grinding pad (as Fig. 1).Utilize this method, make the silicon chips periphery dead space less than 3mm.But the problem of bringing thus is: along with the grinding of silicon chip, retaiher ring is also in attrition constantly and attenuation gradually also can change to the pressure of grinding pad and the deformation that causes accordingly.So in the life cycle of whole retainer ring, because the continuous attenuate of thickness, make the grinding rate of silicon chips periphery also in the variation that does not stop, deficient in stability on the technology.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method of automatic adjusting silicon wafer grinding pressure of chemical-mechanical polisher, according to the actual (real) thickness of retainer ring, adjusts the pressure output of retainerring when grinding.
For solving the problems of the technologies described above, the method of a kind of automatic adjusting silicon wafer grinding pressure of chemical-mechanical polisher of the present invention, use chemical-mechanical polisher to silicon chip grinding, in the HCLU of this chemical-mechanical polisher (Head Clean Load/Unload grinding head cleans and silicon chip loading and unloading unit), install the pressure sensitive sensor additional, following steps are carried out in circulation then: new retainer ring is installed on this chemical-mechanical polisher, reset the retainer ring one-tenth-value thickness 1/10, grinding head is forwarded to directly over the HCLU, measure force value and automatic record on the new retainer ring, chemical-mechanical polisher begins grinding operation, when grinding head forwards HCLU to, when unloading lower silicon slice, measure the thickness of retainer ring, pressure compensation value when calculating grinding according to this thickness difference is also adjusted, when the thickness attenuation of retainer ring, should suitably turn down pressure, the grinding rate of silicon chips periphery is remained unchanged, carry out silicon chip grinding operation next time again retainer ring.
The inventive method is owing to the actual (real) thickness according to retaiher ring, constantly adjust the pressure output of retainer ring when grinding, guaranteed that retainer ring pressure to grinding pad when different-thickness is constant all the time, prevented the fluctuation of the silicon chips periphery speed that therefore causes, improve the stability of residual-film thickness degree of the silicon chips periphery of CMP technology, also can prolong the service life 10% of retaiher ring simultaneously.
Description of drawings
Fig. 1 is the schematic diagram of two kinds of grinding heads existing in the traditional handicraft;
Fig. 2 is the schematic diagram of the inventive method when using on CMP equipment.
The specific embodiment
The present invention is further detailed explanation below in conjunction with drawings and the specific embodiments.
The HCLU (Head Clean Load/Unload) that has general Mirra CMP equipment now mainly bears the cleaning function of silicon chip Load/Unload and grinding head.The principle of the inventive method is: for realizing measuring automatically the function of retainer ring thickness, at first install the pressure sensitive sensor additional in above-mentioned HCLU.When grinding head being cleaned, sensor applied pressure value is calculated the thickness of ring at that time by retainer ring at every turn.According to this thickness, when the actual grinding of silicon chip, original setup pressure value is done corresponding compensation adjustment (needing existing equipment control software is transformed), be consistent with the pressure of assurance to grinding pad.
The concrete steps of the inventive method are: at first install the pressure sensitive sensor in the HCLU of CMP equipment additional, circulation is carried out then: new retainer ring is installed, original retainer ring one-tenth-value thickness 1/10 is reset, grinding head is forwarded to directly over the HCLU, force value when measuring new ring and record automatically, (promptly changed after the new retainer ring, need make zero, and the force value that will measure for the first time is as the initial value of this ring original measured value.Later on by with the comparison of this value, draw the difference of thickness), equipment begins the goods operation then, when forwarding to, grinding head measures the thickness of retainer ring at that time when HCLU unloads lower silicon slice, pressure compensation value when calculating grinding according to this thickness difference is also adjusted, the grinding rate of silicon chips periphery is remained unchanged, carry out silicon chip grinding operation next time again.
When in the present invention existing equipment control software being transformed, need to carry out following steps:
1) increases the information record field for each grinding head.
The original information field: grinding head is changed the time on date; Grinding head accumulative total is used piece number; Grinding head adds up service time.
Increase field: retainer ring changes the time on date; The force value that new retainer ring records when changing; Accumulative total is used piece number; Add up service time; Wearing and tearing thickness; Every piece of silicon chip average abrasion thickness; Expectation can continue to use piece number; The pressure compensation value.
2) increase retainer ring pressure measxurement button.Be used for after changing retainer ring, manually indication is used piece number zero clearing to original retainer ring accumulative total simultaneously to the piezometry of new ring.
3) increase retainer ring pressure measuring function.According to the force value that records, the pressure differential when calculating with new the replacing, it is poor to convert corresponding thickness to.And calculate corresponding pressure compensation value, be recorded in the grinding head information field.
4) increase pressure compensation.When grinding head during,, the pressure of retainer ring is adjusted according to the offset that writes down in the grinding head information field to silicon chip grinding.
5) according to the varied in thickness that records at every turn, draw the wearing and tearing thickness of every piece of silicon chip of retainer ring, and estimate remaining service life (piece number).
As shown in Figure 2, be the schematic diagram of the inventive method when on CMP equipment, using.In the time of directly over grinding head is in HCLU, on retainer ring, apply certain force value (must at every turn all be same value), force value when the force value that records by pressure sensor is compared new clothes retainer ring then, drawing corresponding thickness changes, at variable quantity, calculate the pressure compensation value when grinding according to thickness.
Must emphasize, in specific embodiments of the invention, find that when the very fast and retainer ring pressure of the speed of periphery was big when retainer ring was thin, the speed of periphery was very fast.So when the retainerring attenuation, should suitably turn down the pressure of retainer ring.Such as: measure the retainerring 50 μ m that worn and torn, then when silicon chip grinding to original setting pressure reduce 0.1psi (?).
In sum, the inventive method is applied in semiconductor integrated circuit and makes in the CMP technology in field, actual (real) thickness according to retainer ring, constantly adjust the pressure output of retainer ring when grinding, guaranteed that retainer ring pressure to grinding pad when different-thickness is constant all the time, prevent the fluctuation of the silicon chips periphery speed that therefore causes, improved the stability of residual-film thickness degree of the silicon chips periphery of CMP technology, also can prolong the service life 10% of ring simultaneously.
Claims (3)
1, a kind of method of automatic adjusting silicon wafer grinding pressure of chemical-mechanical polisher, use chemical-mechanical polisher to silicon chip grinding, it is characterized in that, in the HCLU of described chemical-mechanical polisher, install the pressure sensitive sensor additional, following steps are carried out in circulation then: new retainer ring is installed on described chemical-mechanical polisher, reset the retainer ring one-tenth-value thickness 1/10, grinding head is forwarded to directly over the described HCLU, measure force value and automatic record on this new retainer ring, described chemical-mechanical polisher begins grinding operation, when grinding head forwards described HCLU to, when unloading lower silicon slice, measure the thickness of retainer ring, pressure compensation value when calculating grinding according to this thickness difference is also adjusted, and the grinding rate of silicon chips periphery is remained unchanged, and carries out silicon chip grinding operation next time again.
2, the method for automatic adjusting silicon wafer grinding pressure of chemical-mechanical polisher according to claim 1, it is characterized in that, described calculate the pressure compensation value when grinding and adjust according to this thickness difference be meant: when grinding head forwards described HCLU to, on retainer ring, apply the fixed pressure value, force value when the force value that records by described pressure sensor is compared the new clothes retainer ring then, draw the retainer ring varied in thickness, calculate the pressure compensation value when grinding again, when the thickness attenuation of retainer ring, should suitably turn down pressure to retainer ring.
3, the method for automatic adjusting silicon wafer grinding pressure of chemical-mechanical polisher according to claim 1 and 2, it is characterized in that, described calculate the pressure compensation value when grinding and adjust according to this thickness difference need to carry out following steps: step 1, be that each grinding head increases information record field, comprise that retainer ring changes force value, accumulative total that time on date, new retainer ring records when changing and uses piece number, accumulative total service time, wearing and tearing thickness, every piece of silicon chip average abrasion thickness, estimates can continue to use piece number, pressure compensation value; Step 2 increases retainer ring pressure measxurement button; Step 3; Increase retainer ring pressure measuring function, calculate corresponding pressure compensation value, and be recorded in the described information record field of step 1; Step 4 increases pressure compensation, and the pressure of retainer ring is adjusted; Step 5 according to the varied in thickness that records at every turn, draws the wearing and tearing thickness of every piece of silicon chip of retainer ring, and estimates remaining service life.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200510111553A CN100574996C (en) | 2005-12-15 | 2005-12-15 | A kind of method of automatic adjusting silicon wafer grinding pressure of chemical-mechanical polisher |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200510111553A CN100574996C (en) | 2005-12-15 | 2005-12-15 | A kind of method of automatic adjusting silicon wafer grinding pressure of chemical-mechanical polisher |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1981992A true CN1981992A (en) | 2007-06-20 |
| CN100574996C CN100574996C (en) | 2009-12-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200510111553A Expired - Fee Related CN100574996C (en) | 2005-12-15 | 2005-12-15 | A kind of method of automatic adjusting silicon wafer grinding pressure of chemical-mechanical polisher |
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| Country | Link |
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| CN (1) | CN100574996C (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102019574A (en) * | 2010-12-10 | 2011-04-20 | 天津中环领先材料技术有限公司 | Wax-free polishing process of ultrathin zone-melting silicon polished slice |
| CN102632452A (en) * | 2012-04-24 | 2012-08-15 | 浙江金瑞泓科技股份有限公司 | Polishing method for silicon wafer by utilizing water ring |
| CN105397613A (en) * | 2015-10-26 | 2016-03-16 | 上海华力微电子有限公司 | Method for maintaining balance of grinding rate of grinding machine table |
| CN106475897A (en) * | 2016-10-11 | 2017-03-08 | 京东方科技集团股份有限公司 | Substrate grinding device and substrate cleaning equipment |
| WO2020077670A1 (en) * | 2018-10-15 | 2020-04-23 | 北京工业大学 | Device and method for on-line measurement of wafer thinning and grinding force |
| CN116021358A (en) * | 2023-03-28 | 2023-04-28 | 之江实验室 | Fine processing device and method for lithium niobate piezoelectric single crystal |
| CN116533127A (en) * | 2023-07-06 | 2023-08-04 | 浙江晶盛机电股份有限公司 | Polishing pressure adjusting method, polishing pressure adjusting device, computer equipment and storage medium |
-
2005
- 2005-12-15 CN CN200510111553A patent/CN100574996C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102019574A (en) * | 2010-12-10 | 2011-04-20 | 天津中环领先材料技术有限公司 | Wax-free polishing process of ultrathin zone-melting silicon polished slice |
| CN102019574B (en) * | 2010-12-10 | 2011-09-14 | 天津中环领先材料技术有限公司 | Wax-free polishing process of ultrathin zone-melting silicon polished slice |
| CN102632452A (en) * | 2012-04-24 | 2012-08-15 | 浙江金瑞泓科技股份有限公司 | Polishing method for silicon wafer by utilizing water ring |
| CN105397613A (en) * | 2015-10-26 | 2016-03-16 | 上海华力微电子有限公司 | Method for maintaining balance of grinding rate of grinding machine table |
| CN106475897A (en) * | 2016-10-11 | 2017-03-08 | 京东方科技集团股份有限公司 | Substrate grinding device and substrate cleaning equipment |
| WO2020077670A1 (en) * | 2018-10-15 | 2020-04-23 | 北京工业大学 | Device and method for on-line measurement of wafer thinning and grinding force |
| US11404329B2 (en) | 2018-10-15 | 2022-08-02 | Beijing University Of Technology | Device and method for on-line measurement of wafer grinding force |
| CN116021358A (en) * | 2023-03-28 | 2023-04-28 | 之江实验室 | Fine processing device and method for lithium niobate piezoelectric single crystal |
| CN116533127A (en) * | 2023-07-06 | 2023-08-04 | 浙江晶盛机电股份有限公司 | Polishing pressure adjusting method, polishing pressure adjusting device, computer equipment and storage medium |
| CN116533127B (en) * | 2023-07-06 | 2023-10-31 | 浙江晶盛机电股份有限公司 | Polishing pressure adjusting method, polishing pressure adjusting device, computer equipment and storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100574996C (en) | 2009-12-30 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131219 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20131219 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Hua Hong NEC Electronics Co.,Ltd. |
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Granted publication date: 20091230 |