CN106612486A - Thermally-induced sound production device manufacturing method and device - Google Patents
Thermally-induced sound production device manufacturing method and device Download PDFInfo
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- CN106612486A CN106612486A CN201510705537.2A CN201510705537A CN106612486A CN 106612486 A CN106612486 A CN 106612486A CN 201510705537 A CN201510705537 A CN 201510705537A CN 106612486 A CN106612486 A CN 106612486A
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Abstract
The invention relates to the technical field of sound production devices, and particularly relates to a thermally-induced sound production device manufacturing method and a device. The thermally-induced sound production device manufacturing method mainly comprises steps: spin coating of a photoresist is carried out on the surface of a substrate, a photoetching plate with multiple opaque patterns arranged in an array mode is used for carrying out exposure and developing dissolution on the substrate, an etching mask layer with multiple column-shaped photoresist bodies arranged in an array mode is thus formed on the substrate, the substrate is then etched, a substrate structure layer with multiple cone structures arranged in an array mode is thus formed between the etching mask layer and the substrate, a metal film layer is sputtered on the substrate structure layer after the etching mask layer is removed, and a graphene layer supported by cone vertexes of the substrate structure layer covers the substrate. The thermally-induced sound production device is manufactured through the above manufacturing method. The thermally-induced sound production device manufactured through the above manufacturing method has an arrayed point-surface contact structure, and the sound production efficiency and the sound production strength are high.
Description
Technical field
The present invention relates to sound-producing device technical field, more particularly to a kind of system of thermo-acoustic device
Preparation Method and device.
Background technology
Sound-producing device is typically made up of signal input apparatus and sounding component two parts, by signal
Input unit input signal sends sound to sounding component.Existing sounding component species
A lot, such as electrodynamic type, electromagnetic type, electrostatic and piezoelectric type, they mostly adopt diaphragm oscillations
Sound is sent, structure is complex.Thermo-acoustic device is that one kind changes skill with heat energy and acoustic energy
Art is the sound-producing device of principle, and its principle of sound is essentially different with traditional sounding component.
Traditional sound-producing device operation principle is the core component vibrating diaphragm of sounding component after electric signal input
Vibration is produced, and then promotes the gas near vibrating diaphragm to vibrate therewith, so as to convert electrical energy into sound
Energy.And thermophone is without any vibrating mass, its operation principle is based primarily upon a kind of thermoacoustic and turns
Change technology：By carrying out periodicity electrical heating to the heating material with certain characteristic so as to table
Face produces periodic heat type number, using the heat conduction between the gas that material surface is in contact with it with
And the principle that gas expands with heat and contract with cold so that the gas of the vicinity of material surface produces cyclic fluctuation
Temperature wave, from The Ideal-Gas Equation, the presence of temperature wave and then cause gas pressure
The expansion of power and compression, so as to produce sound wave in material surface area.
Because thermo-acoustic device is to realize sounding by air near heating, so thermic
The phonation efficiency of sound-producing device depends primarily on the efficiency of heating surface of the material to surrounding air, a certain
The efficiency of heating surface that point is concentrated is higher, then phonation efficiency is higher.And there is sending out for point-face contact structures
Acoustic device, because the area of contact point is little, resistance is big, when electric signal is applied at this produced by
Heat maximum also most concentrate, the phonation efficiency at the point can be caused to greatly improve.
And at present existing thermo-acoustic device is adopted more due to being limited by metal preparation technology
With surface contact structure, so as to cause the area of contact point of existing thermo-acoustic device larger,
The shortage of heat produced when electric signal is applied, so as to cause its efficiency of heating surface relatively low, Jin Erji
The big phonation efficiency for limiting thermo-acoustic device.
The content of the invention
(1) technical problem to be solved
The technical problem to be solved in the present invention there is provided a kind of preparation method of thermo-acoustic device
And device, the preparation method of the thermo-acoustic device can be prepared to be tied with the point-face contact of array type
The thermo-acoustic device of structure, the thermo-acoustic device has efficient phonation efficiency and intensity of phonation.
(2) technical scheme
In order to solve above-mentioned technical problem, the invention provides a kind of preparation of thermo-acoustic device
Method, comprises the steps：
S1, one substrate of offer, the substrate has an even curface；
S2, in the surface spin coating photoresist of the substrate, have to form one on the substrate
Certain thickness photoresist layer；
S3, the substrate with the photoresist layer is carried out into photolithographic exposure by photolithography plate, it is described
There are multiple impermeable light patterns arranged into an array on photolithography plate；
S4, the substrate with the photoresist layer after the exposure is solidified, then developed molten
Solution, to form etching mask layer on the substrate, the etching mask layer includes multiple Cheng Zhen
The photoetching colloid of the cylinder of row arrangement；
S5, isotropic etching is carried out to the substrate with the etching mask layer, with described
Between etching mask layer and substrate formed underlying structure layer, the underlying structure layer include it is multiple into
The cone structure of array arrangement；
S6, oxygen plasma is carried out to the substrate with the etching mask layer and underlying structure layer
Etching, to remove the etching mask layer；
S7, in the substrate with the underlying structure layer sputter a metal film layer；
S8, tile in the substrate with the metal film layer graphene layer, the graphite
Alkene layer is supported by the cone apex of the underlying structure layer.
Wherein, also include：
S9, on the metal film layer and graphene layer electrocondution slurry is smeared respectively, it is described to lead
The side of plasma-based material is connected to electrode.
Wherein, in step S2, by sol evenning machine spin coating photoresist on the substrate,
The rotating speed of the sol evenning machine is 3000～6000 turns.
Wherein, in step S2, also include：On the substrate photoresist described in spin coating it
Before, first the substrate is toasted, for removing the moisture of the substrate surface；The baking
Roasting temperature is 120 DEG C, and the baking time is 30 minutes.
Wherein, in step S2, also include：On the substrate after photoresist described in spin coating,
The substrate with photoresist layer is positioned on 120 DEG C of hot plate and is toasted 2 minutes, so that institute
State photoetching adhesive curing.
Wherein, in step S3, the substrate with the photoresist layer is entered by litho machine
Row photolithographic exposure, the time of the photolithographic exposure is 80～150 seconds.
Wherein, it is described to be cured as with the photoresist after the exposure in step S4
The substrate of layer is positioned on 120 DEG C of hot plate and toasts 2 minutes；The development is dissolved as to the base
Dissolved by developing liquid developing the exposure area of the photoresist layer on bottom.
Wherein, in step S5, by plasma etching machine to covering with the etching
The substrate of film layer is performed etching, and the time of the etching is 1～2 hour.
Wherein, also with following parameter request：
S1, the material of the substrate are insulating materials, and thickness is 500 μm；
S2, the thickness of the photoresist layer are 1～5 μm, and material is positive photoresist；
Impermeable light pattern on S3, the photolithography plate is circular or polygon, described circular or many
The radius or the length of side of side shape is 5～15 μm, and spacing is 10～30 μm；
The bottom surface shape of the photoetching colloid of the cylinder arranged into an array on S4, the etching mask layer
Shape is circular or polygon, and described circular or polygonal radius or the length of side are 5～15 μm, and high
Spend for 1～5 μm；
S6, the thickness of the metal film layer are 200～500nm, and material is aluminium.
Present invention also offers a kind of thermo-acoustic device, is using thermic sounding as above
The preparation method of device and made by.
(3) beneficial effect
The above-mentioned technical proposal of the present invention has the advantages that：The thermic sounding dress of the present invention
To provide a substrate, substrate has an even curface to the preparation method put；On the surface of substrate
Spin coating photoresist, has certain thickness photoresist layer to form one in substrate；Will be with light
The substrate of photoresist layer carries out photolithographic exposure by photolithography plate, has on photolithography plate multiple into array row
The impermeable light pattern of row；Substrate with the photoresist layer after exposure is solidified, Ran Houxian
Shadow dissolves, and to form etching mask layer in substrate, etching mask layer includes multiple into array row
The photoetching colloid of the cylinder of row；Isotropic etching is carried out to the substrate with etching mask layer,
With between etching mask layer and substrate formed underlying structure layer, underlying structure layer include it is multiple into
The vertebral body structure of array arrangement；Oxygen is carried out to the substrate with etching mask layer and underlying structure layer
Plasma etching, to remove etching mask layer；Sputter in the substrate with underlying structure layer
One metal film layer；A graphene layer, Graphene are covered in the substrate with metal film layer
Layer is supported by the centrum summit of underlying structure layer；The thermo-acoustic device of the present invention is by such as
What upper described preparation method was prepared from.The preparation method of the thermo-acoustic device make use of quarter
The side of erosion is inclined erosion effect, and its thermo-acoustic device prepared has the point-face contact knot of array type
Structure, because the area of each contact point is little, resistance big, when electric signal is applied, contact point is produced
Raw heat maximum is also most concentrated, so that the thermo-acoustic device has efficient phonation efficiency
And intensity of phonation.
Description of the drawings
Fig. 1 is the preparation flow figure of the preparation method of the thermo-acoustic device of the embodiment of the present invention；
Fig. 2 is the schematic flow sheet of the preparation method of the thermo-acoustic device of the embodiment of the present invention；
Fig. 3 is the structural representation of the thermo-acoustic device of the embodiment of the present invention；
Fig. 4 is the sectional view of the thermo-acoustic device of the embodiment of the present invention.
Wherein, 1, substrate；2nd, underlying structure layer；3rd, graphene layer；4th, electrocondution slurry；5、
Electrode；6th, metal film layer.
Specific embodiment
Embodiments of the present invention are described in further detail with reference to the accompanying drawings and examples.
Following examples are used to illustrate the present invention, but can not be used for limiting the scope of the present invention.
In describing the invention, unless otherwise stated, " multiple " are meant that two or two
More than.Term " on ", D score, "left", "right", " interior ", " outward ", " front end ", " rear end ",
The orientation or position relationship of the instructions such as " head ", " afterbody " be based on orientation shown in the drawings or
Position relationship, is for only for ease of the description present invention and simplifies description, rather than indicates or imply
The device or element of indication must have specific orientation, with specific azimuth configuration and operation,
Therefore it is not considered as limiting the invention.Additionally, term " first ", " second ", "
Three " etc. it is only used for describing purpose, and it is not intended that indicating or implying relative importance.
In describing the invention, it should be noted that unless otherwise clearly defined and limited,
Term " installation ", " connected ", " connection " should be interpreted broadly, for example, it may be fixed connect
Connect, or be detachably connected, or be integrally connected；Can be mechanically connected, it is also possible to
It is electrical connection；Can be joined directly together, it is also possible to be indirectly connected to by intermediary.For this
For the those of ordinary skill in field, can understand above-mentioned term in the present invention with concrete condition
Concrete meaning.
As shown in Figure 1 and Figure 2, the preparation method of the thermo-acoustic device that the present embodiment is provided, bag
Include following steps：
S1, one substrate 1 of offer, substrate 1 has an even curface.
The material of preferred substrate 1 is the poor material of insulating materials or electric conductivity, and thickness is 500
μm；For the ease of compatible integrated circuit technique, 2 inches of the present embodiment selection standard circular or
Square silicon wafer is used as substrate 1.
S2, in the surface spin coating photoresist of substrate 1, with formed on the base 1 one have it is certain
The photoresist layer of thickness.
In order to ensure the spin coating effect of photoresist, the present embodiment is preferably by sol evenning machine in substrate 1
Upper spin coating photoresist, the rotating speed of sol evenning machine is 3000～6000 turns；The thickness of photoresist layer is preferred
For 1～5 μm, and material is positive photoresist.
In order to ensure the flatness and the spin coating effect of photoresist of substrate 1, in order to spin coating
The substrate 1 of photoresist carries out subsequent treatment, and in this step following concrete steps are further comprises：
Before S21, on the base 1 spin coating photoresist, first substrate 1 is toasted, for clear
Except the moisture on the surface of substrate 1；In order to the moisture for ensureing the surface of substrate 1 is thoroughly removed, while
Good flatness is still possessed on the surface of substrate 1, and the temperature of the baking of preferred pair substrate 1 is 120 DEG C,
Baking time is 30 minutes；
After S22, on the base 1 spin coating photoresist, the substrate 1 with photoresist layer is positioned over
Toast 2 minutes on 120 DEG C of hot plate, so that the photoetching adhesive curing on the surface of substrate 1, to guarantee light
Photoresist layer is connected with the reliable solidification of substrate 1.
S3, the substrate 1 with photoresist layer is carried out into photolithographic exposure, photolithography plate by photolithography plate
It is upper that there are multiple impermeable light patterns arranged into an array.Wherein, the arrow in Fig. 2 represents exposure
Time direction of illumination.
In order to ensure that subsequent step is easy to operation, the impermeable light pattern on the photolithography plate of the present embodiment
For circular or polygon or other patterns, the lighttight circular or polygonal radius or the length of side
For 5～15 μm, and spacing is 10～30 μm；In order to ensure the photolithographic exposure effect of substrate 1,
The present embodiment is to carry out photolithographic exposure to the substrate 1 with photoresist layer by litho machine, will
The substrate 1 for scribbling photoresist layer is placed on the silicon chip pedestal of litho machine, and is put on the base 1
The photoetching board to explosure for presetting lighttight pattern is put, the time for exposure is preferably 80～150
Second.
S4, will be solidified with the substrate 1 of photoresist layer after exposure, then development dissolving,
To form etching mask layer on the base 1, etching mask layer includes multiple posts arranged into an array
The photoetching colloid of body.
In this step, preferably the substrate 1 with the photoresist layer after exposure is positioned over into 120
DEG C hot plate on toast 2 minutes so that the photoresist layer after exposure can reliably solidify
On the base 1, the exposure area of photoresist layer then in preferred pair substrate 1 is by development
Liquid development dissolving, will be arranged into an array lighttight circular or polygonal on photolithography plate
Pattern is transferred on photoresist layer, and the photoresist layer after development dissolving defines into array row
The photoetching colloid of the cylinder of row, the photoetching colloid of the cylinder has and the light tight figure on photolithography plate
The section of case same shape.
In the present embodiment, the bottom of the photoetching colloid of the cylinder arranged into an array on etching mask layer
Face is conveniently of circular shape or polygon or other patterns, the circular or polygonal radius or side
It is long to be preferably 5～15 μm, and highly preferred is 1～5 μm.
S5, isotropic etching is carried out to the substrate 1 with etching mask layer, with substrate 1
Upper formation underlying structure layer 2, underlying structure layer 2 includes the photoetching of multiple cones arranged into an array
Colloid.
In this step, preferably by plasma etching machine to the substrate 1 with etching mask layer
Perform etching, by plasma etch process to the part blocked without photoresist in substrate 1
Downward one segment distance of etching, because the cylinder photoresist array of etching mask layer retained is for it
The substrate 1 of lower section has protective effect, therefore the lower zone in etching mask layer will not be carved
Erosion；But incline erosion effect due to there is side in etching process, substrate 1 can be caused more to connect
The part of nearly upper surface is by the more severe of lateral etching；Therefore substrate 1 etched downwards one section away from
From while, also inclined erosion effects by side, the shape between etching mask layer and substrate 1
Into summit vertebral body structure upward, so as to form the substrate with vertebral body structure arranged into an array
Structure sheaf 2, the time of the etching of the present embodiment is preferably 1～2 hour.
It should be noted that the cylinder arranged into an array on the etching mask layer of the present embodiment
The bottom shape of photoetching colloid is identical with pattern set in advance on photolithography plate, therefore in this step
The bottom surface pattern of the underlying structure layer 2 of formation it is also identical with pattern set in advance on photolithography plate or
It is similar；For the ease of PROCESS FOR TREATMENT, the impermeable light pattern on photolithography plate that the present embodiment is selected is
It is circular, or square, triangle, polygon or other patterns, so that follow-up shape
Into underlying structure layer 2 bottom surface generally circular in shape or square or triangle or other shapes.
S6, oxygen plasma etch is carried out to the substrate with etching mask layer and underlying structure layer,
To remove etching mask layer, so that only retaining a underlying structure layer 2 in substrate 1.
S7, sputter in the substrate 1 with underlying structure layer 2 metal film layer 6.
In the present embodiment, preferably will be positioned in metal sputtering machine through the substrate 1 of etching processing,
One layer of conducting metal is sputtered in the substrate surface with underlying structure layer 2 by metal sputtering processes,
So that used as metal film layer 6, the metal film layer 6 is covered in the surface of underlying structure layer 2, from
And define the underlying structure layer 2 of the conducting metal array with vertebral body structure；The metal film layer
6 thickness is preferably 200～500nm, and metal material is preferably aluminium.
S8, tile in the substrate 1 with metal film layer 6 graphene layer 3, graphene layer
3 are supported by the cone apex of underlying structure layer 2.
Due to being coated with metal film layer 6 on the underlying structure layer 2, can also regard graphene layer 3 as
Supported by the cone apex of metal film layer 6；In the present embodiment, preferably shifted by wet method
Mode transfer graphene in the substrate 1 with metal film layer 6 so that have gold
The apexes contact of the centrum conducting metal array in the substrate 1 of category film layer 6 is simultaneously supported by one layer
Graphene layer 3, so as to define the array structure of point-face contact on the surface of substrate 1.
Due to the excellent thermal conduction characteristic of Graphene and its very thin thickness, the graphene layer 3 of individual layer
Thickness in 1nm or so, the efficiency of heating surface can be greatly improved；And due to the thickness of graphene layer 3
Degree it is very thin, be conducive to making the sound wave of generation to conduct through graphene layer 3, without because
Film layer for other materials is too thick and causes SATT excessive.
Thus, respectively to the metal film layer 6 and graphite of the array structure with the point-face contact
After alkene layer 3 is powered, heat energy can be converted electrical energy into, the substrate to being coated with metal film layer 6
Structure sheaf 2 carries out periodicity electrical heating so as to which surface produces cyclical heat signal, so that its
Neighbouring gas produces the temperature wave of cyclic fluctuation, and then produces sound wave and sounding.
S9, on metal film layer 6 and graphene layer 3 electrocondution slurry 4, conductive paste are smeared respectively
The side of material 4 is connected to electrode 5.
The material of the electrocondution slurry 4 of the present embodiment is preferably silver, respectively metal on the base 1
Film layer 6 and by smearing conductive silver paste on the point-supported graphene layer 3 in top of metal film layer 6,
And the side difference extraction electrode 5 from the conductive silver paste of metal film layer 6 and graphene layer 3,
Two electrodes 5 are connected respectively with electric signal input/output mechanism, and electric signal is existed by electrode 5
Lead in/out between metal film layer 6 and graphene layer 3, form loop, easily facilitate to gold
Category film layer 6 and graphene layer 3 be powered so that the thermo-acoustic device have it is safer can
The conductive structure for leaning on.
As shown in Figure 3, Figure 4, the thermo-acoustic device that the present embodiment is provided is using as described above
Thermo-acoustic device preparation method and made by, the table of the substrate 1 of the thermo-acoustic device
Face has underlying structure layer 2, and the underlying structure layer 2 includes multiple summits arranged into an array upward
Vertebral body structure, underlying structure layer 2 surface sputtering be coated with metal film layer 6, with metal
The summit of the underlying structure layer 2 of film layer 6 is supported by the graphene layer 3 of tiling；In metallic film
The electrocondution slurry 4 of conduction, two electrocondution slurries 4 are respectively provided with layer 6 and graphene layer 3
Side be connected with electric signal input/output mechanism by electrode 5 respectively, so as to pass through introduce or
Electric signal is drawn, the thermo-acoustic device is made using Sonic heat changing technology and sounding, due to the heat
Cause sound-producing device that there are the point-face contact structures of array type, the area of its each contact point is little, resistance
Greatly, also most concentrate in the heat maximum produced by contacting points position when electric signal is applied, so as to
Make the thermo-acoustic device that there is efficient phonation efficiency and intensity of phonation.
In sum, the preparation method of the thermo-acoustic device of the present embodiment is one substrate 1 of offer,
Substrate 1 has an even curface；In the surface spin coating photoresist of substrate 1, with substrate 1
It is upper to form one with certain thickness photoresist layer；Substrate 1 with photoresist layer is passed through into light
It is mechanical to carry out photolithographic exposure, there are multiple impermeable light patterns arranged into an array on photolithography plate；Will
Substrate 1 with the photoresist layer after exposure is solidified, then development dissolving, with substrate 1
Upper formation etching mask layer, etching mask layer includes the photoresist of multiple cylinders arranged into an array
Body；Isotropic etching is carried out to the substrate 1 with etching mask layer, with etching mask layer
Underlying structure layer 2 is formed and substrate 1 between, underlying structure layer 2 includes multiple arranged into an array
Vertebral body structure；Oxygen plasma is carried out to the substrate 1 with etching mask layer and underlying structure layer 2
Body is etched, to remove etching mask layer；One is sputtered in the substrate 1 with underlying structure layer 2
Metal film layer 6；A graphene layer 3, stone are covered in the substrate 1 with metal film layer 6
Black alkene layer 3 is supported by the centrum summit of underlying structure layer 2；The thermo-acoustic device of the present invention
It is prepared from by preparation method as above.The preparation method of the thermo-acoustic device
The side that make use of etching is inclined erosion effect, its thermo-acoustic device prepared have array type point-
Surface contact structure, because the area of each contact point is little, resistance big, connects when electric signal is applied
Heat maximum produced by contact is also most concentrated, so that the thermo-acoustic device has efficiently
Phonation efficiency and intensity of phonation.
Embodiments of the invention are given for the sake of example and description, and are not nothing left
Leakage or limit the invention to disclosed form.Many modifications and variations are for this area
It is obvious for those of ordinary skill.It is to more preferably illustrate to select and describe embodiment
The principle and practical application of the present invention, and one of ordinary skill in the art is made it will be appreciated that originally
Invention is suitable to the various embodiments with various modifications of special-purpose so as to design.
Claims (10)
1. a kind of preparation method of thermo-acoustic device, it is characterised in that comprise the steps：
S1, one substrate of offer (1), the substrate (1) is with an even curface；
S2, in the surface spin coating photoresist of the substrate (1), with the substrate (1)
Form one and there is certain thickness photoresist layer；
S3, the substrate (1) with the photoresist layer is carried out into photolithographic exposure by photolithography plate,
There are multiple impermeable light patterns arranged into an array on the photolithography plate；
S4, the substrate (1) with the photoresist layer after the exposure is solidified, Ran Houxian
Shadow dissolves, and to form etching mask layer in the substrate (1), the etching mask layer includes
The photoetching colloid of multiple cylinders arranged into an array；
S5, isotropic etching is carried out to the substrate (1) with the etching mask layer, with
Underlying structure layer (2), the underlying structure are formed between the etching mask layer and substrate (1)
Layer (2) is including multiple cone structures arranged into an array；
S6, the substrate with the etching mask layer and underlying structure layer (2) is carried out oxygen etc. from
Daughter is etched, to remove the etching mask layer；
S7, in the substrate with the underlying structure layer (2) sputter a metal film layer (6)；
S8, tile in the substrate with the metal film layer (6) graphene layer (3),
The graphene layer (3) is supported by the cone apex of the underlying structure layer (2).
2. the preparation method of thermo-acoustic device according to claim 1, it is characterised in that
Also include：
S9, on the metal film layer (6) and graphene layer (3) conductive paste is smeared respectively
Material (4), the side of the electrocondution slurry (4) is connected to electrode (5).
3. the preparation method of thermo-acoustic device according to claim 1, it is characterised in that
In step S2, by sol evenning machine in the substrate (1) spin coating photoresist, it is described
The rotating speed of sol evenning machine is 3000～6000 turns.
4. the preparation method of thermo-acoustic device according to claim 1, it is characterised in that
In step S2, also include：Before photoresist described in spin coating in the substrate (1),
First the substrate (1) is toasted, for removing the moisture on the substrate (1) surface；
The temperature of the baking is 120 DEG C, and the baking time is 30 minutes.
5. the preparation method of thermo-acoustic device according to claim 1, it is characterised in that
In step S2, also include：After photoresist described in spin coating in the substrate (1), will
The substrate (1) with photoresist layer is positioned on 120 DEG C of hot plate and toasts 2 minutes, with
Make the photoetching adhesive curing.
6. the preparation method of thermo-acoustic device according to claim 1, it is characterised in that
In step S3, light is carried out to the substrate (1) with the photoresist layer by litho machine
Exposure is carved, the time of the photolithographic exposure is 80～150 seconds.
7. the preparation method of thermo-acoustic device according to claim 1, it is characterised in that
It is described to be cured as the substrate (1) with the photoresist layer after the exposure in step S4
It is positioned on 120 DEG C of hot plate and toasts 2 minutes；The development is dissolved as to the substrate (1)
On photoresist layer exposure area by developing liquid developing dissolve.
8. the preparation method of thermo-acoustic device according to claim 1, it is characterised in that
In step S5, by plasma etching machine to the substrate with the etching mask layer
(1) perform etching, the time of the etching is 1～2 hour.
9. the preparation method of thermo-acoustic device according to claim 1, it is characterised in that
Also there is following parameter request：
S1, the material of the substrate (1) are insulating materials, and thickness is 500 μm；
S2, the thickness of the photoresist layer are 1～5 μm, and material is positive photoresist；
Impermeable light pattern on S3, the photolithography plate is circular or polygon, described circular or many
The radius or the length of side of side shape is 5～15 μm, and spacing is 10～30 μm；
The bottom surface shape of the photoetching colloid of the cylinder arranged into an array on S4, the etching mask layer
Shape is circular or polygon, and described circular or polygonal radius or the length of side are 5～15 μm, and high
Spend for 1～5 μm；
S6, the thickness of the metal film layer (6) are 200～500nm, and material is aluminium.
10. a kind of thermo-acoustic device, it is characterised in that be using as claim 1-9 is arbitrary
Described in thermo-acoustic device preparation method and made by.
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| CN102802109A (en) * | 2011-05-27 | 2012-11-28 | 清华大学 | Preparation method for thermophone element |
| CN203167267U (en) * | 2012-11-20 | 2013-08-28 | 清华大学 | Thermoacoustic device |
| CN103841500A (en) * | 2012-11-20 | 2014-06-04 | 清华大学 | Thermotropic sound-making device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109951782A (en) * | 2019-04-17 | 2019-06-28 | 北方工业大学 | Flexible sound production device based on graphene and preparation method and application thereof |
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