CN106611743A - Method of manufacturing air gap/copper interconnection structure - Google Patents
Method of manufacturing air gap/copper interconnection structure Download PDFInfo
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- CN106611743A CN106611743A CN201611240356.8A CN201611240356A CN106611743A CN 106611743 A CN106611743 A CN 106611743A CN 201611240356 A CN201611240356 A CN 201611240356A CN 106611743 A CN106611743 A CN 106611743A
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- interconnection structure
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- copper interconnection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76837—Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- Condensed Matter Physics & Semiconductors (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A method of manufacturing an air gap/copper interconnection structure comprises the following steps: providing a semiconductor substrate, completing a CMOS device front-end process on the semiconductor substrate, and forming a conventional first medium/copper interconnection structure on the semiconductor substrate; carrying out surface treatment on the conventional first medium/copper interconnection structure in a nitrogen atmosphere, and forming a layer of nitrogen-containing compound of copper on the surface of a copper interconnection line; using an etching device to etch a first medium in the middle of the copper interconnection line, wherein the first medium is etched with a fluorine-based gas and an oxygen-based gas, and the layer of nitrogen-containing compound of copper protects the copper interconnection line from exposure in the etching gas atmosphere; using wet solution to remove residual photoresist, and carrying out cleaning; and depositing a second medium to form an air gap/copper interconnection structure.
Description
Technical field
The present invention relates to field of semiconductor processing and manufacturing, more particularly to a kind of manufacture method of air-gap/copper interconnection structure.
Background technology
Transistor constantly develops with Moore's Law, and characteristic line breadth is less and less, and integration density more and more higher, performance is more next
It is more powerful.For complementary metal oxide semiconductors (CMOS) (Complementary Metal Oxide Semiconductor, abbreviation
CMOS) for transistor, speed is the important indicator for characterizing its performance.
It will be apparent to those skilled in the art that the speed of CMOS is related to the delay of CMOS, before the delay of CMOS can be subdivided into
The delay of road device and the delay of post-channel interconnection line；Also, as semiconductor processing dimensions are reduced, the CMOS of post-channel interconnection line prolongs
Slow impact becomes increasing, and topmost delay is had become in advanced technologies.The delay of post-channel interconnection line is mainly
By interconnecting lead resistance R and interconnecting lead between electric capacity C (i.e. RC) determine.
In order to reduce post-channel interconnection line RC retardation ratio, Integrated circuit manufacturers trying every possible means to reduce always interconnecting lead resistance and
Electric capacity between interconnecting lead, such as replaces aluminum conductor, using the lower low-k media of dielectric constant using the lower copper conductor of resistivity
Replace silica dioxide medium.
For the latter, the technology innovation of several technology bands is had already been through, medium is from SiO between interconnecting lead2→F doped
SiO2(FSG) in the development of → BD I → BD II → BD III, the dielectric constant of medium is persistently dropping between interconnecting lead
It is low, the demand for reducing post-channel interconnection line RC is met with this.
It is well known that the relative dielectric constant of vacuum is 1, the relative dielectric constant of air is also about 1, and it is modal
The medium of minimum relative dielectric constant.Therefore, the traditional sucrose between interconnection line is replaced also to be suggested therewith using air part,
Here it is air-gap/copper interconnection structure technology.
The forming method of air-gap may be roughly divided into following two big class：
The first kind, first forms normal medium/copper interconnection structure using traditional technique, is then removed by etching technics
Medium between copper interconnecting line, finally by chemical vapor deposition method air-gap is formed；
Equations of The Second Kind, using sacrifice layer, such as thermal degradable polymer, removes after copper interconnection structure is completed
Sacrifice layer, forms air-gap.
At present for most of integrated circuit manufacturing enterprises, the processing compatibility of first kind method is higher, therefore more
Easily received.Below by accompanying drawing 1-3, sketch in prior art and air-gap/copper-connection is prepared using first kind method
The process of structure.
Step S01：First traditional interconnection structure of 102/ bronze medal of first medium 104, the part are formed in Semiconductor substrate 101
Technique is just the same with existing CMOS technology, without extra process costs and risk (as shown in Figure 1), will not be described here；
Step S02：The first medium between copper-connection wire is removed, such as part first is removed using dielectric etch technique and is situated between
Matter obtains structure as shown in Figure 2；However, the surface that copper 104 can be caused in etching process is oxidized, certain thickness copper is obtained
Oxide 105；
Step S03：Photoresist and cleaning silicon chip that medicinal liquid removes residual are cleaned using rear road；During cleaning, by
It is easy to by rear road cleaning medicinal liquid corrosion in Cu oxide 105, and rear road cleans medicinal liquid not corrosion barrier layer 103, therefore, finally
Barrier layer " ear " 103 ' is left, as shown in Figure 3.
Due to the presence of barrier layer " ear " 103 ', the structure brings series of negative on subsequent technique and device performance
Affect, for example, when using chemical vapor deposition medium, it may appear that：
1., the Step Coverage performance around the barrier layer " ear " 103 ' is deteriorated；
2., the bad mechanical strength on the barrier layer " ear " 103 ' and cause to cave in；
3., the sophisticated electric field intensity in the barrier layer " ear " 103 ' changes, and directly results in CMOS transistor performance evil
Change etc..
The content of the invention
In view of the shortcomings of the prior art, it is an object of the invention to provide a kind of system of air-gap/copper interconnection structure
Method is made, to solve the problems, such as prior art because there is barrier layer " ear " and the deterioration of caused transistor performance, it is avoided
The generation of barrier layer " ear ", not only contributes to chemical vapor deposition method deposit medium and forms air-gap, and improves
Transistor performance.
For achieving the above object, technical scheme is as follows：
A kind of manufacture method of air-gap/copper interconnection structure, it is characterised in that include：
Step S1：Semi-conductive substrate is provided, first the front road technique of cmos device is completed on a semiconductor substrate, is then continued to
Road copper interconnecting line after formation, i.e., form on the semiconductor substrate conventional first medium/copper interconnection structure；
Step S2：Conventional first medium/the copper interconnection structure is surface-treated in nitrogenous atmosphere, described
Copper interconnecting line surface forms the nitrogen-containing compound of one layer of copper；
Step S3：First medium in the middle of the copper interconnecting line is etched using etching apparatus；Wherein, in etching first medium
During performed etching using fluorine base gas and epoxide gas, the nitrogen containing compound layer of the copper protects the copper interconnecting line not have
In being exposed to etching gas atmosphere；
Step S4：Residual photoresist is removed using wet liquid medicine and is cleaned；
Step S5：Deposit second medium, forms the air-gap/copper interconnection structure.
Preferably, step S1 is specifically included：
Step S11：First medium layer is deposited on a semiconductor substrate；
Step S12：Damascus groove or double damascenes are formed in the first medium layer using lithographic etch process
Leather hole slot；
Step S13：Difference deposition preventing layer material and copper interconnection material；
Step S14：Barrier layer and copper interconnection layer are formed through grinding technics, i.e., forms conventional on the semiconductor substrate
First medium/copper interconnection structure.
Preferably, the first medium material in the conventional first medium/copper interconnection structure is silicon oxide, the oxygen of Fluorin doped
One or more in SiClx, the silicon oxide of carbon doping, silicon nitride, the carborundum of N doping.
Preferably, the oxidation silicon/oxidative silicon multi-layer laminate structure of the silicon carbide/carbon doping of the medium N doping.
Preferably, in step s 2, the thickness of the nitrogen-containing compound of the one layer of copper for being formed on the copper interconnecting line surface can
Control and thickness is uniform.
Preferably, the thickness of the nitrogen-containing compound of the copper is 50～300 angstroms.
Preferably, in step s3, using CF4/O2Mixed gas etch the first medium layer.
Preferably, in step s 4, corrosion of the rear road wet liquid medicine for removing residual photoresist to residual photoresist
Corrosion rate of the speed more than the nitrogen-containing compound to the copper.
Preferably, in step s 5, the second dielectric layer is deposited using chemical vapor deposition device.
Preferably, the second dielectric layer is silicon oxide, the silicon oxide of Fluorin doped, the silicon oxide of carbon doping, silicon nitride, nitrogen
One or more in the carborundum of doping.
From above-mentioned technical proposal as can be seen that in a kind of manufacture method of air-gap/copper-connection that the present invention is provided, first
Copper surface by process for treating surface in conventional media/copper interconnection structure forms the nitrogenous chemical combination of the uniform copper of a layer thickness
Thing, the nitrogen-containing compound of the copper can protect interconnection line copper not to be etched and aoxidize in subsequent medium etching, and will not
By rear road wet liquid medicine fast erosion, it is to avoid cause because rear road wet liquid medicine corrodes the oxide of copper in prior art
Barrier layer " ear " structure, is conducive to the deposit of subsequent medium and the formation of air-gap, improves the performance of transistor.
Description of the drawings
Fig. 1 show in prior art the typical case of the first medium/copper interconnection structure for forming traditional on a semiconductor substrate
Schematic diagram
Fig. 2 show in prior art and completes first medium between first medium/copper interconnection structure removing copper-connection wire
Structural representation afterwards
Fig. 3 leaves the structural representation of barrier layer " ear " after road cleaning step after the completion of showing in prior art
Fig. 4 is a kind of manufacture method schematic flow sheet of air-gap/copper interconnection structure proposed by the invention
Fig. 5 in the embodiment of manufacture method one of air-gap/copper interconnection structure of the present invention by completing what is formed after step S1
Generalized section
Fig. 6 in the embodiment of manufacture method one of air-gap/copper interconnection structure of the present invention by completing what is formed after step S2
Generalized section
Fig. 7 in the embodiment of manufacture method one of air-gap/copper interconnection structure of the present invention by completing what is formed after step S3
Generalized section
Specific embodiment
The specific embodiment of the present invention is described in detail below in conjunction with the accompanying drawings.It should be understood that the present invention can
There is various changes in different examples, it is neither departed from the scope of the present invention, and explanation therein and be shown in essence
It is taken in explain and is used, and is not used to limit the present invention.
In conjunction with accompanying drawing 4-7, a kind of air-gap/copper wiring technique of the present invention is made further in detail by specific embodiment
Describe in detail bright.It should be noted that, accompanying drawing in the form of simplifying very much and uses non-accurately ratio, only to convenient, bright
The purpose of the embodiment of the present invention is aided in illustrating clearly.
Fig. 4 is referred to, one of manufacture method of a kind of air-gap/copper interconnection structure of the present invention as shown is preferably
The schematic flow sheet of embodiment.In the present embodiment, a kind of manufacture method of air-gap/copper interconnection structure comprises the steps：
Step S01：Semi-conductive substrate is provided, first the front road technique of cmos device is completed on a semiconductor substrate, then after
Road copper interconnecting line after continuous formation, i.e., form on the semiconductor substrate conventional first medium/copper interconnection structure.Specifically,
Fig. 5 is referred to, Fig. 5 in the embodiment of manufacture method one of air-gap/copper interconnection structure of the present invention by completing to be formed after step S1
Generalized section.
As illustrated, this step first completes the front road technique of cmos device on silicon substrate 301, then continue to form rear road
Interconnection line, forms the conventional structure of 302/ copper-connection of medium 304, wherein, label 303 is barrier layer.
Below by one 12 inches of wafer silicon chips as an optional embodiment, to using known CMOS technology,
Conventional front road cmos device structure is formed on silicon chip, the concrete steps for then forming interconnection line using copper wiring technique are carried out
Explanation.
Specifically, in this embodiment, step S1 may include steps of：
Step S11：First medium layer 302 is deposited in Semiconductor substrate 301；
Step S12：Damascus groove or dual damascene are formed in first medium layer 302 using lithographic etch process
Hole slot；
Step S13：Difference deposition preventing layer material and copper interconnection material；
Step S14：Barrier layer 303 and copper interconnection layer 304 are formed through grinding technics, i.e., forms normal on a semiconductor substrate
First medium/the copper interconnection structure of rule.
It is preferred that the conventional first medium 302 for being deposited can be silicon oxide, the silicon oxide of Fluorin doped, the oxygen of carbon doping
One or more in SiClx, silicon nitride, the carborundum of N doping, in an embodiment of the present invention, first medium 302 is adopted
The oxidation silicon/oxidative silicon multi-layer laminate structure of the silicon carbide/carbon doping of N doping.
Step S2：Conventional first medium/the copper interconnection structure is surface-treated in nitrogenous atmosphere, described
Copper interconnecting line surface forms the nitrogen-containing compound of one layer of copper.Fig. 6 is referred to, Fig. 6 is the system of air-gap/copper interconnection structure of the present invention
Make the generalized section for completing to be formed after step S2 in the embodiment of method one.
As shown in fig. 6, in the present embodiment, conventional first medium/copper interconnection structure is placed in nitrogenous atmosphere to be carried out
Surface treatment, forms that a layer thickness is controllable and nitrogen-containing compound 305 of copper in uniform thickness on the surface of interconnection metallic copper 304,
It is preferred that the thickness of the nitrogen-containing compound of copper can be 50～300 angstroms.
In the present embodiment, conventional first medium/copper interconnection structure can be placed in plasma chemical vapor deposition and is set
In standby, processed using nitrogen plasma, the nitrogenate 305 of the copper of 120 angstroms of thickness is obtained on the surface of copper-connection 304.
In another embodiment, conventional first medium/copper interconnection structure can be placed in plasma chemical vapor deposition
In equipment, nitrogenous precursor gas are selected, only optionally deposit the nitrogen-containing compound of 100 angstroms of thickness on the surface of copper-connection 304
CuNSi, and first medium surface can't form the nitrogen-containing compound of copper.
The nitrogen-containing compound 305 of the copper is difficult by fluorine-containing gas etching, and rear nitrogen of the road wet liquid medicine to the copper
The corrosion rate of compound 305 is far smaller than the corrosion rate to remaining photoresist, therefore after the nitrogen containing compound layer of the copper is served as
Protective layer in continuous technique.
In addition, the nitrogen-containing compound 305 of the copper is also used as the coating (capping of copper interconnecting line 304
Layer), electromigration resistance properties can be effectively improved.
Step S3：First medium in the middle of the copper interconnecting line is etched using etching apparatus；Wherein, in etching first medium
During performed etching using fluorine base gas and epoxide gas, the nitrogen containing compound layer of the copper protects the copper interconnecting line not have
In being exposed to etching gas atmosphere.Specifically, Fig. 7 is referred to, Fig. 7 is the manufacture method of air-gap/copper interconnection structure of the present invention
The generalized section formed after step S3 is completed in one embodiment.
As shown in fig. 7, in the present embodiment, first Jie between copper interconnecting line 304 is removed using photoetching, etching technics
Matter.Performed etching using fluorine base gas and epoxide gas during etching first medium, but because the surface of copper interconnecting line 304 has
The nitrogen-containing compound 305 of one layer of copper as protective layer, therefore, can only etch away the first medium for needing to remove.
In the present embodiment, CF4/O can be adopted2Mixed gas etch media layer 302, because the surface of copper-connection 304 has
The nitrogen-containing compound 305 of one layer of copper, can prevent metallic copper 304 from being oxidized, therefore, the nitrogen-containing compound 305 of copper plays etching
The effect of protective layer.
Step S4：Residual photoresist is removed using wet liquid medicine and is cleaned.
Specifically, the photoresist of etching residue is removed and silicon wafer surface cleaning is clean using rear road wet liquid medicine, and
Afterwards the corrosion rate of photoresist of the road wet liquid medicine to remaining is far longer than the corrosion of the nitrogen-containing compound to metallic copper or copper
Speed, therefore, barrier layer " ear " will not be re-formed.
Step S5：Deposit second medium material, forms the air-gap/copper interconnection structure.
Specifically, second dielectric layer can be deposited using chemical gas-phase deposition method, forms air-gap/copper interconnection structure.
Second dielectric layer can be in silicon oxide, the silicon oxide of Fluorin doped, the silicon oxide of carbon doping, silicon nitride, the carborundum of N doping
One or more, the air-gap for being formed be located at copper interconnecting line between.In the present embodiment, can be strengthened with using plasma
Chemical vapor deposition device deposits according to this carborundum of nitrating and the silicon oxide of carbon dope, due to the depth of the groove between copper-connection 304
It is wide higher, therefore, air-gap can be formed between metal copper-connection automatically when second medium material is deposited, form air
Gap/copper interconnection structure.
In sum, in a kind of manufacture method of air-gap/copper interconnection structure that the present invention is provided, by first adopting table
It is controllable and copper in uniform thickness nitrogenous that copper surface of the face treatment technology in conventional media/copper interconnection structure forms a layer thickness
Compound, by the use of the nitrogen-containing compound of the copper as mask layer during copper metal protective layer and wet-cleaning during dielectric etch,
Barrier layer " ear " structure is avoided the formation of, process controllability and concordance is improve, transistor device performance can be effectively improved.
Only embodiments of the invention above, embodiment is simultaneously not used to limit the scope of patent protection of the present invention, therefore
The equivalent structure change that every description and accompanying drawing content with the present invention is made, should be included in the same manner the protection of the present invention
In the range of.
Claims (10)
1. a kind of manufacture method of air-gap/copper interconnection structure, it is characterised in that include：
Step S1：Semi-conductive substrate is provided, first the front road technique of cmos device is completed on a semiconductor substrate, then described half
Conventional first medium/copper interconnection structure is formed on conductor substrate；
Step S2：Conventional first medium/the copper interconnection structure is surface-treated in nitrogenous atmosphere, it is mutual in the copper
Line surface forms the nitrogen-containing compound of one layer of copper；
Step S3：First medium in the middle of the copper interconnecting line is etched using etching apparatus；Wherein, in etching first medium process
Middle employing fluorine base gas and epoxide gas are performed etching, and the nitrogen containing compound layer of the copper protects the copper interconnecting line not expose
In etching gas atmosphere；
Step S4：Residual photoresist is removed using wet liquid medicine and is cleaned；
Step S5：Deposit second medium, forms the air-gap/copper interconnection structure.
2. a kind of manufacture method of air-gap/copper interconnection structure according to claim 1, it is characterised in that the step
S1 is specifically included：
Step S11：First medium layer is deposited on a semiconductor substrate；
Step S12：Damascus groove or dual damascene hole are formed in the first medium layer using lithographic etch process
Groove；
Step S13：Difference deposition preventing layer material and copper interconnection material；
Step S14：Barrier layer and copper interconnection layer are formed through grinding technics, i.e., forms conventional the on the semiconductor substrate
One medium/copper interconnection structure.
3. the manufacture method of a kind of air-gap/copper interconnection structure according to claim 1 and 2, it is characterised in that it is described often
Rule first medium/copper interconnection structure in first medium material be silicon oxide, the silicon oxide of Fluorin doped, the silicon oxide of carbon doping,
One or more in silicon nitride, the carborundum of N doping.
4. a kind of manufacture method of air-gap/copper interconnection structure according to claim 3, it is characterised in that the medium
The oxidation silicon/oxidative silicon multi-layer laminate structure adulterated with the silicon carbide/carbon of N doping.
5. the manufacture method of a kind of air-gap/copper interconnection structure according to claim 1, it is characterised in that in step S2
In, on the copper interconnecting line surface, the thickness of the nitrogen-containing compound of one layer of copper of formation is controllable and thickness is uniform.
6. the manufacture method of a kind of air-gap/copper interconnection structure according to claim 5, it is characterised in that the copper
The thickness of nitrogen-containing compound is 50～300 angstroms.
7. the manufacture method of a kind of air-gap/copper interconnection structure according to claim 1, it is characterised in that in step S3
In, using CF4/O2Mixed gas etch the first medium layer.
8. the manufacture method of a kind of air-gap/copper interconnection structure according to claim 1, it is characterised in that in step S4
In, the rear road wet liquid medicine for removing residual photoresist is to remaining the corrosion rate of photoresist more than the nitrogen to the copper
The corrosion rate of compound.
9. the manufacture method of a kind of air-gap/copper interconnection structure according to claim 1, it is characterised in that in step S5
In, the second dielectric layer is deposited using chemical vapor deposition device.
10. according to a kind of manufacture method of the arbitrarily described air-gap/copper interconnection structure of claim 1 or 9, it is characterised in that
The second dielectric layer is in silicon oxide, the silicon oxide of Fluorin doped, the silicon oxide of carbon doping, silicon nitride, the carborundum of N doping
One or more.
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| CN201611240356.8A CN106611743A (en) | 2016-12-28 | 2016-12-28 | Method of manufacturing air gap/copper interconnection structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110676216A (en) * | 2019-12-03 | 2020-01-10 | 长江存储科技有限责任公司 | Interconnection structure and forming method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20040232552A1 (en) * | 2002-12-09 | 2004-11-25 | Advanced Micro Devices, Inc. | Air gap dual damascene process and structure |
| US20080299758A1 (en) * | 2007-06-04 | 2008-12-04 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing semiconductor device |
| CN102969273A (en) * | 2012-10-25 | 2013-03-13 | 上海集成电路研发中心有限公司 | Forming method of copper Damascus interconnection structure with air gaps |
-
2016
- 2016-12-28 CN CN201611240356.8A patent/CN106611743A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040232552A1 (en) * | 2002-12-09 | 2004-11-25 | Advanced Micro Devices, Inc. | Air gap dual damascene process and structure |
| US20080299758A1 (en) * | 2007-06-04 | 2008-12-04 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing semiconductor device |
| CN102969273A (en) * | 2012-10-25 | 2013-03-13 | 上海集成电路研发中心有限公司 | Forming method of copper Damascus interconnection structure with air gaps |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110676216A (en) * | 2019-12-03 | 2020-01-10 | 长江存储科技有限责任公司 | Interconnection structure and forming method thereof |
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Application publication date: 20170503 |