CN106783730A - A kind of method for forming air-gap/copper-connection - Google Patents
A kind of method for forming air-gap/copper-connection Download PDFInfo
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- CN106783730A CN106783730A CN201611234439.6A CN201611234439A CN106783730A CN 106783730 A CN106783730 A CN 106783730A CN 201611234439 A CN201611234439 A CN 201611234439A CN 106783730 A CN106783730 A CN 106783730A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
Abstract
A kind of method for forming air-gap/copper-connection, it includes providing semi-conductive substrate, and the preceding road technique of cmos device is first completed on a semiconductor substrate, and conventional first medium/copper interconnection structure is then formed on a semiconductor substrate；Conventional first medium/copper interconnection structure is surface-treated in oxygen containing atmosphere, one layer of oxide of copper is formed on copper interconnecting line surface；Using the first medium in the middle of etching apparatus etching copper interconnecting line；Wherein, performed etching using fluorine base gas and epoxide gas during first medium is etched, the oxide of copper protects the copper interconnecting line to be not exposed in etching gas atmosphere；The Cu oxide on reduction copper interconnecting line surface, even if the Cu oxide on copper interconnecting line surface is re-converted into metallic copper；Photoresist is remained using wet liquid medicine removal and is cleaned；Second medium is deposited to form air-gap/copper interconnection structure.
Description
Technical field
The present invention relates to field of semiconductor processing and manufacturing, especially, it is related to a kind of method for forming air-gap/copper-connection.
Background technology
Transistor is continued to develop with Moore's Law, and characteristic line breadth is less and less, and integration density more and more higher, performance is more next
It is more powerful.For complementary metal oxide semiconductors (CMOS) (Complementary Metal Oxide Semiconductor, abbreviation
CMOS) for transistor, speed is the important indicator for characterizing its performance.
It will be apparent to those skilled in the art that the speed of CMOS is related to the delay of CMOS, before the delay of CMOS can be subdivided into
The delay of road device and the delay of post-channel interconnection line；Also, as semiconductor processing dimensions are reduced, the CMOS of post-channel interconnection line prolongs
Slow influence becomes increasing, and topmost delay is had become in advanced technologies.The delay of post-channel interconnection line is mainly
By interconnecting lead resistance R and interconnecting lead between electric capacity C (i.e. RC) determine.
In order to reduce post-channel interconnection line RC retardation ratio, Integrated circuit manufacturers trying every possible means to reduce always interconnecting lead resistance and
Electric capacity between interconnecting lead, such as replaces aluminum conductor, using the lower low-k media of dielectric constant using the lower copper conductor of resistivity
Instead of silica dioxide medium.
For the latter, medium from SiO is had already been through between the technology innovation of several technology bands, interconnecting lead2→F doped
SiO2(FSG) in the development of → BD I → BD II → BD III, the dielectric constant of medium is in lasting drop between interconnecting lead
It is low, the demand for reducing post-channel interconnection line RC is met with this.
It is well known that the relative dielectric constant of vacuum is 1, the relative dielectric constant of air is also about 1, and it is most common
The medium of minimum relative dielectric constant.Therefore, also it is suggested therewith instead of the traditional sucrose between interconnection line using air part,
Here it is air-gap/copper interconnection structure technology.
The forming method of air-gap may be roughly divided into following two major class：
The first kind, first forms normal medium/copper interconnection structure using traditional technique, is then removed by etching technics
Medium between copper interconnecting line, air-gap is formed finally by chemical vapor deposition method；
Equations of The Second Kind, using sacrifice layer, such as thermal degradable polymer, removes after copper interconnection structure is completed
Sacrifice layer, forms air-gap.
At present for most of integrated circuit manufacturing enterprises, the processing compatibility of first kind method is higher, therefore more
Easily received.Below by accompanying drawing 1-3, sketch and air-gap/copper-connection is prepared using first kind method in the prior art
The process of structure.
Step S01：Traditional interconnection structure of 102/ bronze medal of first medium 104, the part are first formed in Semiconductor substrate 101
Technique is just the same with existing CMOS technology, does not have extra process costs and risk (as shown in Figure 1), will not be repeated here；
Step S02：The first medium between copper-connection wire is removed, is such as situated between using dielectric etch technique removal part first
Matter obtains structure as shown in Figure 2；However, can cause that the surface of copper 104 is oxidized in etching process, certain thickness copper is obtained
Oxide 105；
Step S03：Using the photoresist and cleaning silicon chip of rear road cleaning liquid removal residual；During cleaning, by
It is easy to by rear road cleaning liquid corrosion in Cu oxide 105, and rear road cleans liquid not corrosion barrier layer 103, therefore, finally
Barrier layer " ear " 103 ' is left, as shown in Figure 3.
Due to the presence of barrier layer " ear " 103 ', the structure brings series of negative on subsequent technique and device performance
Influence, for example, when using chemical vapor deposition medium, it may appear that：
1., the Step Coverage performance around the barrier layer " ear " 103 ' is deteriorated；
2., the bad mechanical strength on the barrier layer " ear " 103 ' and cause to cave in；
3., the sophisticated electric-field intensity in the barrier layer " ear " 103 ' changes, and directly results in CMOS transistor performance evil
Change etc..
The content of the invention
In view of the shortcomings of the prior art, it is an object of the invention to provide a kind of side for forming air-gap/copper-connection
Method, is deteriorated with solving the problems, such as prior art because there is transistor performance caused by barrier layer " ear ", which obviates resistance
The generation of barrier " ear ", not only contributes to chemical vapor deposition method deposit medium and forms air-gap, and improve crystal
Pipe performance.
To achieve the above object, technical scheme is as follows：
A kind of method for forming air-gap/copper-connection, it is characterised in that including：
Step S1：Semi-conductive substrate is provided, the preceding road technique of cmos device is first completed on a semiconductor substrate, then continue to
Road copper interconnecting line after formation, i.e., form conventional first medium/copper interconnection structure on the semiconductor substrate；
Step S2：Conventional first medium/the copper interconnection structure is surface-treated in oxygen containing atmosphere, described
Copper interconnecting line surface forms one layer of oxide of copper；
Step S3：First medium in the middle of the copper interconnecting line is etched using etching apparatus；Wherein, in etching first medium
During performed etching using fluorine base gas and epoxide gas, the oxide of the copper protects the copper interconnecting line to be not exposed to
In etching gas atmosphere；
Step S4：The Cu oxide on the copper interconnecting line surface is reduced, even if the Cu oxide on the copper interconnecting line surface
It is re-converted into metallic copper；
Step S5：Photoresist is remained using wet liquid medicine removal and is cleaned；
Step S6：Deposit second medium, forms the air-gap/copper interconnection structure.
Preferably, the step S1 is specifically included：
Step S11：First medium layer is deposited on a semiconductor substrate；
Step S12：Damascus groove or double damascenes are formed in first medium layer using lithographic etch process
Leather hole slot；
Step S13：Difference deposition preventing layer material and copper interconnection material；
Step S14：Barrier layer and copper interconnection layer are formed by grinding technics, i.e., forms conventional on the semiconductor substrate
First medium/copper interconnection structure.
Preferably, the first medium material in the conventional first medium/copper interconnection structure is silica, the oxygen of Fluorin doped
One or more in SiClx, the silica of carbon doping, silicon nitride, the carborundum of N doping.
Preferably, the oxidation silicon/oxidative silicon multi-layer laminate structure of the silicon carbide/carbon doping of the medium N doping.
Preferably, in step s 2, the copper interconnecting line surface formed one layer of oxide of copper thickness it is controllable and
Thickness is uniform, and the thickness of the oxide of the copper is 30~300 angstroms.
Preferably, in step s3, the first medium layer is etched using CF4/O2 mixed gas.
Preferably, in step s 4, the reproducibility thing that the Cu oxide byproduct on the reduction copper conductor surface is used
Matter is the plasma of hydrogen and/or ammonia gas or hydrogen and/or ammonia.
Preferably, in step s 5, the rear road wet liquid medicine selection of the removal residual photoresist is to residual photoresist
Corrosion rate of the corrosion rate more than the oxide to the copper.
Preferably, in step s 6, using chemical gas-phase deposition method or using plasma enhancing chemical vapor deposition
Equipment deposits the second dielectric layer.
Preferably, the second dielectric layer is silica, the silica of Fluorin doped, the silica of carbon doping, silicon nitride, nitrogen
One or more in the carborundum of doping.
From above-mentioned technical proposal as can be seen that the present invention provide a kind of formation air-gap/copper-connection method in, its
First pass through the oxidation that copper surface of the process for treating surface in conventional media/copper interconnection structure forms the uniform copper of a layer thickness
Thing, is then re-converted into metallic copper, most by using reducing substances after dielectric etch by the oxide of the copper on copper surface
Photoresist and cleaned using rear road wet liquid medicine removal residual again afterwards, it is to avoid in the prior art because rear road wet liquid medicine is corroded
The oxide of copper and barrier layer " ear " structure for causing, are conducive to the deposit of subsequent medium and the formation of air-gap, improve brilliant
The performance of body pipe.
Brief description of the drawings
Fig. 1 show the typical case of the first medium/copper interconnection structure for forming traditional on a semiconductor substrate in the prior art
Schematic diagram
Fig. 2 show and complete in the prior art first medium between first medium/copper interconnection structure removing copper-connection wire
Structural representation afterwards
Fig. 3 leaves the structural representation of barrier layer " ear " after road cleaning step after the completion of showing in the prior art
Fig. 4 is a kind of method flow schematic diagram of formation air-gap/copper-connection proposed by the invention
Fig. 5 is that the present invention forms the section for completing in the embodiment of method one of air-gap/copper-connection to be formed after step S1
Schematic diagram
Fig. 6 is that the present invention forms the section for completing in the embodiment of method one of air-gap/copper-connection to be formed after step S2
Schematic diagram
Fig. 7 is that the present invention forms the section for completing in the embodiment of method one of air-gap/copper-connection to be formed after step S3
Schematic diagram
Fig. 8 is that the present invention forms the section for completing in the embodiment of method one of air-gap/copper-connection to be formed after step S3
Schematic diagram
Specific embodiment
Specific embodiment of the invention is described in detail below in conjunction with the accompanying drawings.It should be understood that the present invention can
There is various changes in different examples, it is neither departed from the scope of the present invention, and explanation therein and be shown in essence
It is taken in explain and is used, and is not used to the limitation present invention.
In conjunction with accompanying drawing 4-8, by specific embodiment a kind of method for forming air-gap/copper-connection of the invention is made into
One step is described in detail.It should be noted that, accompanying drawing in the form of simplifying very much and uses non-accurately ratio, only to side
Just the purpose of the embodiment of the present invention, is lucidly aided in illustrating.
Fig. 4 is referred to, a kind of one preferred embodiment of method for forming air-gap/copper-connection of the invention as shown is
Schematic flow sheet.In the present embodiment, a kind of method for forming air-gap/copper-connection comprises the following steps：
Step S01：There is provided semi-conductive substrate, first on a semiconductor substrate complete the preceding road technique of cmos device, then after
Road copper interconnecting line after continuous formation, i.e., form conventional first medium/copper interconnection structure on the semiconductor substrate.Specifically,
Refer to Fig. 5, Fig. 5 is that the present invention forms cuing open of completing in the embodiment of method one of air-gap/copper-connection to be formed after step S1
Face schematic diagram.
As illustrated, this step first completes the preceding road technique of cmos device on silicon substrate 301, then continue to form rear road
Interconnection line, forms the conventional structure of 302/ copper-connection of medium 304, wherein, label 303 is barrier layer.
Below by one 12 inches of wafer silicon chips as an optional implementation method, to the CMOS technology known to,
Conventional preceding road cmos device structure is formed on silicon chip, the specific steps for then forming interconnection line using copper wiring technique are carried out
Explanation.
Specifically, in this embodiment, step S1 may include steps of：
Step S11：First medium layer 302 is deposited in Semiconductor substrate 301；
Step S12：Damascus groove or dual damascene are formed in first medium layer 302 using lithographic etch process
Hole slot；
Step S13：Difference deposition preventing layer material and copper interconnection material；
Step S14：Barrier layer 303 and copper interconnection layer 304 are formed by grinding technics, i.e., forms normal on a semiconductor substrate
First medium/the copper interconnection structure of rule.
It is preferred that the conventional first medium 302 for being deposited can be silica, the silica of Fluorin doped, the oxygen of carbon doping
One or more in SiClx, silicon nitride, the carborundum of N doping, in an embodiment of the present invention, first medium 302 is used
The oxidation silicon/oxidative silicon multi-layer laminate structure of the silicon carbide/carbon doping of N doping.
Step S2：Conventional first medium/copper interconnection structure is surface-treated in oxygen containing atmosphere, in copper interconnecting line
Surface forms one layer of oxide of copper.Fig. 6 is referred to, during Fig. 6 is the embodiment of method one that the present invention forms air-gap/copper-connection
Complete the generalized section formed after step S2.
As shown in fig. 6, in the present embodiment, conventional first medium/copper interconnection structure is placed in oxygen containing atmosphere to be carried out
Surface treatment, forms that a layer thickness is controllable and oxide 305 of copper in uniform thickness on the surface of interconnection metallic copper 304, preferably
Ground, the thickness of the oxide of copper can be 30~300 angstroms.
For example, in the present embodiment, conventional media/copper interconnection structure is placed in into plasma chemical vapor deposition equipment
In, processed using oxygen plasma, obtain 100 angstroms of oxides of the copper of thickness on the surface of copper-connection 304.
The oxide 305 of the copper is difficult by fluorine-containing gas etching, and the oxygen in etching gas is not easy to be further continued for oxidation mutually
The oxide of even metallic copper, therefore the copper serves as the protective layer in subsequent technique.
Step S3：First medium in the middle of the copper interconnecting line is etched using etching apparatus；Wherein, in etching first medium
During performed etching using fluorine base gas and epoxide gas, the oxide protection copper interconnecting line of copper is not exposed to etching gas
In atmosphere.Refer to Fig. 7, Fig. 7 is to complete institute's shape after step S3 during the present invention forms the embodiment of method one of air-gap/copper-connection
Into generalized section.
Specifically, as shown in fig. 7, in the present embodiment, can using photoetching, etching technics removal copper interconnecting line 304 it
Between first medium 302.Performed etching using fluorine base gas and epoxide gas during first medium 302 is etched, but due to
There is one layer of oxide of copper 305 on the surface of copper interconnecting line 304 as protective layer, therefore, can only etch away needs first Jie of removal
Matter 302.
In the present embodiment, CF4/O can be used2Mixed gas etching first medium layer 302, due to the table of copper-connection 304
There is one layer of oxide of copper 305 in face, and metallic copper 304 can be prevented to be oxidized, therefore, the oxide 305 of copper plays etching protection
The effect of layer.
Step S4：The Cu oxide on reduction copper interconnecting line surface, even if the Cu oxide on copper interconnecting line surface is converted again
It is metallic copper.
Specifically, referring to Fig. 8, in the present embodiment, reducing substances can be used by the oxide of the copper on copper surface
305 are re-converted into metallic copper 306, it is preferred that reducing substances is hydrogen, ammonia gas or hydrogen, the plasma of ammonia
Body.
In the present embodiment, in etching cavity, using the oxide 305 of hydrogen plasma reduction copper, it is converted again
Be metallic copper, due to copper the thickness of oxide 305 known to and thickness is uniform, therefore be easy to set reducing process condition, improve work
Skill uniformity.
Step S5：Photoresist is remained using wet liquid medicine removal and is cleaned.
Specifically, removed the photoresist of etching residue using rear road wet liquid medicine and silicon wafer surface cleaning is clean, and
The corrosion rate of photoresist of the road wet liquid medicine to remaining is far longer than corrosion rate to metallic copper afterwards, therefore, will not shape again
Into barrier layer " ear ".
Step S6：Deposit second medium material, forms the air-gap/copper interconnection structure.
Specifically, second dielectric layer can be deposited using chemical gas-phase deposition method, air-gap/copper interconnection structure is formed.
Second dielectric layer can be in silica, the silica of Fluorin doped, the silica of carbon doping, silicon nitride, the carborundum of N doping
One or more, the air-gap for being formed be located at copper interconnecting line between.In the present embodiment, can be strengthened with using plasma
Chemical vapor deposition device deposits the carborundum of nitrating and the silica of carbon dope according to this, due to the depth of the groove between copper-connection 304
It is wide higher, therefore, air-gap automatic can be formed between metal copper-connection when second medium material is deposited, form air
Gap/copper interconnection structure.
In sum, in a kind of method of formation air-gap/copper-connection that the present invention is provided, by first using at surface
Copper surface of the reason technology in conventional media/copper interconnection structure forms that a layer thickness is controllable and oxide of copper in uniform thickness,
Then the oxide of the copper on copper surface is re-converted into metallic copper by using reducing substances after dielectric etch, is dropped significantly
The corrosion rate of Di Hou roads wet liquid medicine, improves process controllability and uniformity, it is to avoid form barrier layer " ear " structure, and
Transistor device performance can be effectively improved.
Only embodiments of the invention above, embodiment simultaneously is not used to limit scope of patent protection of the invention, therefore
Every equivalent structure change made with specification of the invention and accompanying drawing content, similarly should be included in protection of the invention
In the range of.
Claims (10)
1. it is a kind of formed air-gap/copper-connection method, it is characterised in that including：
Step S1：Semi-conductive substrate is provided, the preceding road technique of cmos device is first completed on a semiconductor substrate, then continue to be formed
Road copper interconnecting line, i.e., form conventional first medium/copper interconnection structure on the semiconductor substrate afterwards；
Step S2：Conventional first medium/the copper interconnection structure is surface-treated in oxygen containing atmosphere, it is mutual in the copper
Line surface forms one layer of oxide of copper；
Step S3：First medium in the middle of the copper interconnecting line is etched using etching apparatus；Wherein, in etching first medium process
Middle use fluorine base gas and epoxide gas are performed etching, and the oxide of the copper protects the copper interconnecting line to be not exposed to etching
In atmosphere；
Step S4：The Cu oxide on the copper interconnecting line surface is reduced, even if the Cu oxide on the copper interconnecting line surface is again
It is converted into metallic copper；
Step S5：Photoresist is remained using wet liquid medicine removal and is cleaned；
Step S6：Deposit second medium, forms the air-gap/copper interconnection structure.
2. a kind of method for forming air-gap/copper-connection according to claim 1, it is characterised in that step S1 tool
Body includes：
Step S11：First medium layer is deposited on a semiconductor substrate；
Step S12：Damascus groove or dual damascene hole are formed in first medium layer using lithographic etch process
Groove；
Step S13：Difference deposition preventing layer material and copper interconnection material；
Step S14：Barrier layer and copper interconnection layer are formed by grinding technics, i.e., forms conventional the on the semiconductor substrate
One medium/copper interconnection structure.
3. a kind of method for forming air-gap/copper-connection according to claim 1 and 2, it is characterised in that the routine the
First medium material in one medium/copper interconnection structure is silica, the silica of Fluorin doped, the silica of carbon doping, nitridation
One or more in silicon, the carborundum of N doping.
4. it is according to claim 3 it is a kind of formed air-gap/copper-connection method, it is characterised in that the medium nitrogen
The oxidation silicon/oxidative silicon multi-layer laminate structure of the silicon carbide/carbon doping of doping.
5. it is according to claim 1 it is a kind of formed air-gap/copper-connection method, it is characterised in that in step s 2,
The thickness of one layer of oxide of copper that the copper interconnecting line surface is formed is controllable and thickness is uniform, the thickness of the oxide of the copper
It is 30~300 angstroms.
6. it is according to claim 1 it is a kind of formed air-gap/copper-connection method, it is characterised in that in step s3, adopt
Use CF4/O2Mixed gas etch the first medium layer.
7. it is according to claim 1 it is a kind of formed air-gap/copper-connection method, it is characterised in that in step s 4, institute
It is hydrogen and/or ammonia gas or hydrogen to state the reducing substances that the Cu oxide byproduct on reduction copper conductor surface used
And/or the plasma of ammonia.
8. it is according to claim 1 it is a kind of formed air-gap/copper-connection method, it is characterised in that in step s 5, institute
State the corrosion rate corruption more than oxide to the copper of the rear road wet liquid medicine to residual photoresist of removal residual photoresist
Erosion speed.
9. it is according to claim 1 it is a kind of formed air-gap/copper-connection method, it is characterised in that in step s 6, adopt
The second dielectric layer is deposited with chemical vapor deposition device.
10. according to a kind of method of any described formation air-gap/copper-connection of claim 1 or 9, it is characterised in that described
Second dielectric layer is in silica, the silica of Fluorin doped, the silica of carbon doping, silicon nitride, the carborundum of N doping
Plant or various.
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| CN102969273A (en) * | 2012-10-25 | 2013-03-13 | 上海集成电路研发中心有限公司 | Forming method of copper Damascus interconnection structure with air gaps |
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| JPH04273437A (en) * | 1991-02-28 | 1992-09-29 | Sony Corp | Dry etching method |
| EP0984488A2 (en) * | 1998-08-31 | 2000-03-08 | Nec Corporation | Multilayer copper interconnect structure with copper oxide portions and manufacturing method thereof |
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| CN103633021A (en) * | 2013-12-02 | 2014-03-12 | 上海华力微电子有限公司 | Method for manufacturing air gap copper interconnecting structure |
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| CN106783730B (en) | 2020-09-04 |
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