CN106602396A - Picosecond mode-locking laser - Google Patents

Picosecond mode-locking laser Download PDF

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Publication number
CN106602396A
CN106602396A CN201710101007.6A CN201710101007A CN106602396A CN 106602396 A CN106602396 A CN 106602396A CN 201710101007 A CN201710101007 A CN 201710101007A CN 106602396 A CN106602396 A CN 106602396A
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CN
China
Prior art keywords
diaphotoscope
mode
mirror
fixed
etalon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710101007.6A
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Chinese (zh)
Inventor
牛岗
石朝辉
毛柘
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Nanjing Sharp Laser Technology Co Ltd
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Nanjing Sharp Laser Technology Co Ltd
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Application filed by Nanjing Sharp Laser Technology Co Ltd filed Critical Nanjing Sharp Laser Technology Co Ltd
Priority to CN201710101007.6A priority Critical patent/CN106602396A/en
Publication of CN106602396A publication Critical patent/CN106602396A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating

Abstract

The invention discloses a picosecond mode-locking laser. The picosecond mode-locking laser comprises a Fabry-Perot etalon, the Fabry-Perot etalon comprises a transmitting mirror E1 and a transmitting mirror E2, wherein the position of at least one from the transmitting mirror E1 and the transmitting mirror E2 is adjusted along the emitting light direction of a semiconductor pumped source LD; a reflector M1, a gain crystal C, the Fabry-Perot etalon and an output mirror M2 are successively arranged along the emitting light direction of the semiconductor pumped source LD; a mode-locking device SESAM and a planoconcave mirror M3 are successively arranged opposite to the emitting light direction of the semiconductor pumped source LD, and an optical light between the mode-locking device SESAM and the planoconcave mirror M3 is parallel to the emitting light direction of the semiconductor pumped source LD. According to the invention, the frequency interval between adjacent transmission peaks of the etalon can be changed, the quantity of longitudinal modes of a mode-locking oscillator is adjusted, the picosecond pulse width is tuned, and influences exerted by etalon angle change on mode-locking stability are avoided.

Description

A kind of psec mode-locked laser
Technical field
The present invention relates to laser technology field, and in particular to a kind of psec mode-locked laser.
Background technology
With the development of laser technology, semiconductor saturable absorbing mirror (SESAM) mode-locking technique becomes acquisition picopulse Main path.But the ps pulse width obtained by SESAM mode-locking techniques is constant, different answering cannot be often met With to the tunable requirement of ps pulse width.
In prior art, sieve etalon is moored to realize psec arteries and veins by Fabry is inserted in SESAM mode locking oscillators more The tuning of width is rushed, its concrete mode is：There is etalon longitudinal mode model selection to act on, and be controlled by the angle of change etalon The longitudinal mode number of lockmaking mould is so as to tuning the width of picopulse.But it is because that etalon has certain thickness, so etalon The change of angle can bring the lateral displacement of laser beam, cause the presence of the change of mode locking oscillator oscillation mode, so as to affect lock The problem of mould stability.
The content of the invention
The invention provides a kind of psec mode-locked laser, is passed through with solving the needs existing for existing picosecond laser Change the angle of etalon the longitudinal mode number of locked mode being controlled so as to tune the width of picopulse so that with certain thickness Etalon causes the lateral displacement of laser beam when angle is changed, and causes mode locking oscillator oscillation mode to change, so as to affect The problem of locked mode stability.
According to an aspect of the invention, there is provided a kind of psec mode-locked laser, including semiconductor pumping sources LD, partly lead Behind body pumping source LD, the outgoing light direction along semiconductor pumping sources LD is disposed with coupling pump light lens L and lock Mode oscillation device；
Mode locking oscillator include reflecting mirror M1, gain crystal C, Fabry pool sieve etalon, outgoing mirror M2, plano-concave mirror M3 and Mode-locking device SESAM；
Fabry pool sieve etalon includes diaphotoscope E1 that the outgoing light direction along semiconductor pumping sources LD sets gradually With diaphotoscope E2, diaphotoscope E1 and diaphotoscope E2 are provided with governor motion, emergent light of the governor motion along semiconductor pumping sources LD Direction carries out relative position regulation to diaphotoscope E1 and diaphotoscope E2, to adjust the distance between diaphotoscope E1 and diaphotoscope E2；
The outgoing of reflecting mirror M1, gain crystal C, Fabry pool sieve etalon and outgoing mirror M2 along semiconductor pumping sources LD Light direction sets gradually；
Mode-locking device SESAM peace concave mirror M3 are set gradually against the outgoing light direction of semiconductor pumping sources LD, and locked mode Optical path direction between device SESAM peace concave mirror M3 is parallel to each other with the outgoing light direction of semiconductor pumping sources LD.
In above scheme preferably, governor motion includes base, and the fixed lens of position fixation are provided with base Component and position-movable translational slide；
Diaphotoscope E1 is fixedly installed on fixed lens group part；
Mobile lens component is fixedly installed in translational slide, diaphotoscope E2 is fixedly installed on mobile lens component.
In any of the above scheme preferably, fixed lens group part includes the fixing len being fixedly installed on base Seat, diaphotoscope E1 are fixedly installed in fixed mirror bar, are provided with fixed mirror bar, at the position on the outside of diaphotoscope E1 Fixed spacer ring is provided with fixing trim ring, fixed mirror bar, between diaphotoscope E1 and fixing trim ring；
Translational slide includes fixed plate and movable plate, and fixed plate is fixed on base, and the bottom surface of movable plate arranges fluted, Groove is set in fixed plate, and the side of groove is provided with locking screw holes, and lock-screw is provided with locking screw holes；
Moving lens bar is fixedly installed on movable plate, diaphotoscope E2 is fixedly installed in moving lens bar, mobile eyeglass It is provided with seat, at the position on the outside of diaphotoscope E2 in mobile trim ring, moving lens bar, presses positioned at diaphotoscope E2 and movement Mobile spacer ring is provided between circle；
Mobile jacking block is fixedly installed on movable plate, regulation corresponding with mobile jacking block position in fixed plate, is fixedly installed Screw rod.
In any of the above scheme preferably, fixed mirror bar is fixed on base by fixation kit screw；It is mobile Eyeglass seat is fixed on movable plate by moving assembly screw.
In any of the above scheme preferably, reflecting mirror M1, outgoing mirror M2, plano-concave mirror M3 and mode-locking device SESAM structures Into vibration chamber.
In any of the above scheme preferably, reflecting mirror M1 is set to transmit the reflecting mirror that pump light reflects oscillation light.
In any of the above scheme preferably, plano-concave mirror M3 is arranged on and for oscillation light to focus on mode-locking device SESAM's Position.
In any of the above scheme preferably, mode-locking device SESAM is set to semiconductor saturable absorbing mirror.
In any of the above scheme preferably, gain crystal C is set to Nd:YVO4Crystal.
In any of the above scheme preferably, the transmission breadth of spectrum line of Fabry pool sieve etalon is shown below：
Wherein, refractive indexs of the μ for medium between diaphotoscope E1 and diaphotoscope E2 of Fabry pool sieve etalon, d is method cloth In moor diaphotoscope E1 and the distance between diaphotoscope E2 of sieve etalon, c is the light velocity, and r is the transmission that Fabry moors sieve etalon The reflectance of mirror E1 and diaphotoscope E2.
The invention has the beneficial effects as follows：This psec mode-locked laser of the present invention, first, which passes through in mode locking oscillator The middle adjustable Fabry of length d that arranges moors sieve etalon, realizes changing the frequency interval δ v at etalon adjacent transmissive peak, so as to adjust The longitudinal mode number of whole mode locking oscillator, to tune ps pulse width, to avoid etalon angle change to locked mode stability Affect；Secondly, which moors sieve etalon by Fabry includes that the outgoing light direction along semiconductor pumping sources LD sets gradually Diaphotoscope E1 and diaphotoscope E2, diaphotoscope E1 and diaphotoscope E2 at least one be provided with the outgoing along semiconductor pumping sources LD Light direction carries out position adjustments, the adjustment structure to adjust distance between diaphotoscope E1 and diaphotoscope E2 so that the etalon Easy to adjust easy to operate, and the reduces cost of length d, improves degree of regulation.
Description of the drawings
Fig. 1 is a kind of structural representation of psec mode-locked laser of one embodiment of the invention；
Fig. 2 is a kind of structural representation of the governor motion of psec mode-locked laser of one embodiment of the invention；
Fig. 3 is a kind of front view of the governor motion of psec mode-locked laser of one embodiment of the invention；
Fig. 4 is a kind of vertical view and broken section of the governor motion of psec mode-locked laser of one embodiment of the invention Figure；
Fig. 5 is a kind of transmission breadth of spectrum line of psec mode-locked laser of one embodiment of the invention with etalon length d The schematic diagram of change.
Specific embodiment
A kind of prior art of psec mode-locked laser is：Sieve is moored by Fabry is inserted in SESAM mode locking oscillators To realize the tuning of ps pulse width, its concrete mode is etalon：There is etalon longitudinal mode model selection to act on, by changing Become the angle of etalon the longitudinal mode number of locked mode being controlled so as to tune the width of picopulse.But it is because that etalon has one Determine thickness, so the change of etalon angle can bring the lateral displacement of laser beam, cause the presence of mode locking oscillator oscillation mode Formula changes, so as to affect the problem of locked mode stability.
The present invention design concept be：For existing psec mode-locked laser as the Angulation changes of its etalon bring The lateral displacement of laser beam, causes the presence of the change of mode locking oscillator oscillation mode, so as to affect the problem of locked mode stability, this Invention moors sieve etalon by the adjustable Fabry of length d is arranged in mode locking oscillator using a kind of psec mode-locked laser, Realize changing the frequency interval δ v at etalon adjacent transmissive peak, so as to adjust the longitudinal mode number of mode locking oscillator, to tune psec Pulse width, to avoid impact of the etalon angle change to locked mode stability；Which moors sieve etalon by Fabry includes edge Diaphotoscope E1 and diaphotoscope E2 that the outgoing light direction of semiconductor pumping sources LD sets gradually, diaphotoscope E1 and diaphotoscope E2 are extremely It is few one of them be provided with the outgoing light direction along semiconductor pumping sources LD carry out position adjustments, to adjust diaphotoscope E1 and transmission The adjustment structure of distance between mirror E2 so that easy to adjust easy to operate, and the reduces cost of length d of the etalon, improves and adjusts Section precision.
Embodiment one
Fig. 1 is a kind of structural representation of psec mode-locked laser of one embodiment of the invention；
Referring to Fig. 1, a kind of psec mode-locked laser, including semiconductor pumping sources LD, behind semiconductor pumping sources LD, edge The outgoing light direction for semiconductor pumping sources LD is disposed with coupling pump light lens L and mode locking oscillator；
Mode locking oscillator include reflecting mirror M1, gain crystal C, Fabry pool sieve etalon, outgoing mirror M2, plano-concave mirror M3 and Mode-locking device SESAM；
Fabry pool sieve etalon includes diaphotoscope E1 that the outgoing light direction along semiconductor pumping sources LD sets gradually With diaphotoscope E2, diaphotoscope E1 and diaphotoscope E2 are provided with governor motion, emergent light of the governor motion along semiconductor pumping sources LD Direction carries out relative position regulation to diaphotoscope E1 and diaphotoscope E2, to adjust the distance between diaphotoscope E1 and diaphotoscope E2；
The outgoing of reflecting mirror M1, gain crystal C, Fabry pool sieve etalon and outgoing mirror M2 along semiconductor pumping sources LD Light direction sets gradually；
Mode-locking device SESAM peace concave mirror M3 are set gradually against the outgoing light direction of semiconductor pumping sources LD, and locked mode Optical path direction between device SESAM peace concave mirror M3 is parallel to each other with the outgoing light direction of semiconductor pumping sources LD.
It can be seen that, this psec mode-locked laser of the present embodiment, by the adjustable method of length d is arranged in mode locking oscillator Background of cloth moors sieve etalon, realizes changing the frequency interval δ v at etalon adjacent transmissive peak, so as to adjust the longitudinal mode of mode locking oscillator Number, to tune ps pulse width, it is to avoid impact of the etalon angle change to locked mode stability；Sieve mark is moored by Fabry Quasi- tool includes diaphotoscope E1 and diaphotoscope E2 that the outgoing light direction along semiconductor pumping sources LD sets gradually, diaphotoscope E1 and Diaphotoscope E2 at least one be provided with the outgoing light direction along semiconductor pumping sources LD carry out position adjustments, to adjust transmission The adjustment structure of distance between mirror E1 and diaphotoscope E2 so that length d of the etalon it is easy to adjust easy to operate, reduce into This, improves degree of regulation.
Embodiment two
Explanation that emphasis is done to the specific implementation of psec mode-locked laser in the present embodiment, other guide referring to The other embodiment of the present invention.
The position of diaphotoscope E1 is fixed, and diaphotoscope E2 is provided with the outgoing light direction along semiconductor pumping sources LD and carries out position Regulation, the structure to adjust distance between diaphotoscope E1 and diaphotoscope E2.In such manner, it is possible to pass through to adjust the position of diaphotoscope E2, Adjustment the distance between diaphotoscope E1 and diaphotoscope E2, so as to realize the regulation of length d that sieve etalon is moored to Fabry, with reality Now change the frequency interval δ v at etalon adjacent transmissive peak, so as to adjust the longitudinal mode number of mode locking oscillator, to tune psec arteries and veins Rush width, it is to avoid impact of the etalon angle change to locked mode stability so that adjustment work is more convenient, further improve and adjust The precision and operability of section.
Preferably, diaphotoscope E2 is fixed on the outgoing light direction along semiconductor pumping sources LD and carries out the movement of position adjustments and puts down On platform.In such manner, it is possible to the regulation of the position to diaphotoscope E2 by operating to mobile platform, is realized, so as to avoid directly Which is caused to damage or Affecting Factors of Accuracy during adjustment diaphotoscope E2, to improve the safety of regulation, it is ensured that degree of regulation.
Fig. 2 is a kind of structural representation of the governor motion of psec mode-locked laser of one embodiment of the invention；Fig. 3 is A kind of front view of the governor motion of the psec mode-locked laser of one embodiment of the invention；Fig. 4 is one embodiment of the invention A kind of psec mode-locked laser governor motion vertical view and Local map；
Referring to Fig. 2 to Fig. 3, it is preferred that governor motion includes base 1, the fixed lens of position fixation on base 1, are provided with Component 2 and position-movable translational slide 3；Diaphotoscope E1 is fixedly installed on fixed lens group part 2；It is solid in translational slide 3 Surely mobile lens component 4 is provided with, diaphotoscope E2 is fixedly installed on mobile lens component 4.
Preferably, fixed lens group part 2 includes the fixed mirror bar 5 being fixedly installed on base 1, and diaphotoscope E1 is fixed and set Put in fixed mirror bar 5, in fixed mirror bar 5, at the position on the outside of diaphotoscope E1, be provided with fixing trim ring 6, it is fixed Fixed spacer ring 7 is provided with eyeglass seat 5, between diaphotoscope E1 and fixing trim ring 6；Translational slide 3 includes fixed plate 8 and moves Dynamic plate 9, fixed plate 8 are fixed on base 1, and the bottom surface of movable plate 9 arranges fluted, and groove is set in fixed plate 8, groove Side is provided with locking screw holes, and lock-screw 10 is provided with locking screw holes；Moving lens bar is fixedly installed on movable plate 9 11, diaphotoscope E2 is fixedly installed in moving lens bar 11, is set in moving lens bar 11, at the position on the outside of diaphotoscope E2 Mobile trim ring 12 is equipped with, in moving lens bar 11, between diaphotoscope E2 and mobile trim ring 12, mobile spacer ring 13 is provided with；Move Mobile jacking block 14 is fixedly installed on dynamic plate 9, adjusting screw rod corresponding with mobile 14 position of jacking block in fixed plate 8, is fixedly installed 15。
It should be noted that when rotation forces movement jacking block 14 drives movable plate 9 to move forward to adjusting screw rod 15 forward, The front end face of adjusting screw rod 15 is contacted with the rear end face of mobile jacking block 14.The rear portion of adjusting screw rod 15 can arrange rotating handle.
Preferably, fixed mirror bar 5 is fixed on base 1 by fixation kit screw 16；Moving lens bar 11 is by moving Dynamic component screw 17 is fixed on movable plate 9.
Preferably, base 1 is set to "convex" shaped.Fixed mirror bar 5 is set to "convex" shaped.Set on fixed mirror bar 5 Circular port is equipped with, diaphotoscope E1 is arranged in the circular port.Fixing trim ring 6 and fixed spacer ring 7 are disposed as annular.Moving lens Bar 11 is set to "convex" shaped.Circular port is provided with moving lens bar 11, diaphotoscope E2 is arranged in the circular port.It is mobile Trim ring 12 and mobile spacer ring 13 are disposed as annular.
Preferably, mobile jacking block 14 includes contiguous block and top bolt, and contiguous block is set to " L " font, two faces of " L " font It is perpendicular, the top keyhole matched with top bolt is provided with one of face, top bolt is extend in the keyhole of top, and solid by nut It is fixed, fixing hole is provided with another face, on movable plate 9, the position of correspondence fixing hole is provided with screw, in fixing hole and screw Stretch into be provided with and contiguous block is fixed to into the screw on movable plate 9；
Preferably, adjusting screw rod 15 includes contiguous block and microspindle, and contiguous block is fixed in fixed plate 8, on contiguous block Internal thread hole is provided with, microspindle is stretched into and is arranged in internal thread hole, the rear end face position of the front end face and top bolt of microspindle Put corresponding, when rotation forces top bolt drives movable plate 9 to move forward to microspindle forward, front end face and the top of microspindle The rear end face of bolt contacts.The rear portion of microspindle can arrange rotating handle.
Preferably, mobile platform is set to electronic mobile platform.In such manner, it is possible to improve the automaticity of regulation, it is to avoid The unstable factor that manual operation brings, improves the efficiency for adjusting and the reliability of regulation.
Preferably, reflecting mirror M1, outgoing mirror M2, plano-concave mirror M3 and mode-locking device SESAM constitute vibration chamber.
Preferably, reflecting mirror M1 is set to transmit the reflecting mirror that pump light reflects oscillation light.Preferably, plano-concave mirror M3 is arranged In the position that oscillation light is focused on mode-locking device SESAM.
Preferably, mode-locking device SESAM is set to semiconductor saturable absorbing mirror.
Preferably, the transmission breadth of spectrum line of Fabry pool sieve etalon is shown below：
Wherein, refractive indexs of the μ for medium between diaphotoscope E1 and diaphotoscope E2 of Fabry pool sieve etalon, d is method cloth In moor diaphotoscope E1 and the distance between diaphotoscope E2 of sieve etalon, c is the light velocity, and r is the transmission that Fabry moors sieve etalon The reflectance of mirror E1 and diaphotoscope E2.
It should be noted that when needing to be moved rearwards by diaphotoscope E2, movable plate 9 can be manually operated and be moved rearwards by, Can also top bolt end be provided with internal thread hole, by the external thread section of 15 front end of adjusting screw rod extend in internal thread hole with Cooperation so that top bolt end and adjusting screw rod 15 front end by screw thread cooperation after, by forward and reverse rotation regulation Screw rod 15, you can realize to pushing up pulling in front and back for bolt, so as to drive movable plate 9 to be moved forward and backward.
Embodiment three
It is explanation that emphasis is done to the specific implementation of the gain crystal C of psec mode-locked laser in the present embodiment, Other embodiment of the other guide referring to the present invention.
Fig. 5 is a kind of transmission breadth of spectrum line of psec mode-locked laser of one embodiment of the invention with etalon length d The schematic diagram of change；
Referring to Fig. 5, gain crystal C is set to Nd:YVO4Crystal.So, when not adding Fabry pool sieve etalon, locked mode Pulse width τ of agitator output is 12.5ps, and spectral width (transmit breadth of spectrum line δ v) (is converted into gain band for 0.25nm A width of 6.62 × 1010Hz)；Fabry pool sieve etalon diaphotoscope E1 and diaphotoscope E2 between medium be air, diaphotoscope Reflectance r=0.6 of the refractive index of E1 and diaphotoscope E2 for μ=1, diaphotoscope E1 and diaphotoscope E2, it is assumed that Fabry moors sieve mark Light in quasi- tool and the angle of normal are 0 °, then transmit the change that breadth of spectrum line δ V moor length d of sieve etalon with Fabry, As shown in Figure 5.Wherein, Fabry pool sieve etalon length d be the distance between diaphotoscope E1 and diaphotoscope E2, length d Excursion is 0.1mm～1mm.
As shown in Figure 5 as can be seen that transmission breadth of spectrum line δ V subtract with the increase that Fabry moors length d of sieve etalon It is few.When length d that Fabry moors sieve etalon is less than 0.4mm, transmission breadth of spectrum line δ V are more than gain media bandwidth, to locked mode The spectrum of agitator does not produce impact, that is to say, that do not interfere with the output pulse width of mode locking oscillator；When Fabry moors sieve When length d of etalon is more than 0.4mm, transmission breadth of spectrum line δ v are less than gain media bandwidth, will make the gain of mode locking oscillator Bandwidth is reduced, and reduces the number of mode locking oscillator starting of oscillation longitudinal mode.There is theoretical boundary in the time-bandwidth product δ v τ of laser pulse (Gaussian is 0.441), actual waveform (pulse width τ is 12.5ps, and transmission breadth of spectrum line δ v are 0.25nm), time-bandwidth product δ v τ are 0.828, can be more than theoretical boundary.The gain bandwidth that Fabry pool sieve etalon causes is reduced, it will bring pulse The increase of width τ.When length d that Fabry moors sieve etalon is 1mm, breadth of spectrum line δ v=2.47 × 10 are transmitted10Hz, it will Make 2.68 times of pulse width τ broadening, that is, pulse width τ can broadening to 33.5ps.When Fabry moors length d of sieve etalon In 0.4mm to 1mm ranges, pulse width τ can between 12.5ps to 33.5ps tuning operation.
The psec mode-locked laser of the present invention, which adopts unit-modularized structure, and which is solid by a piece of lens in etalon Fixed, another lens are moved forward and backward along the axis of fixed lens, and the shift action is completed using translational slide 3, its high precision, Good stability.Its adjusting screw rod 15 could be arranged to thousand points of bars, so that the precision subdivision degree of displacement is protected, i.e., Can realize fine-tuning, to ensure the accuracy of pulse width, so that its stability is ensured.Which can be in outside Realize that debugging is countershaft, it is ensured that adjustment accuracy and stability.After can be using outside debugging tool calibration, in whole machine, enter one Step ensures stability, can meet the requirement of production in enormous quantities.
Presently preferred embodiments of the present invention is these are only, protection scope of the present invention is not intended to limit.It is all at this Any modification, equivalent substitution and improvements made within bright spirit and principle etc., are all contained in protection scope of the present invention.

Claims (10)

1. a kind of psec mode-locked laser, including semiconductor pumping sources LD, behind the semiconductor pumping sources LD, along described The outgoing light direction of semiconductor pumping sources LD is disposed with coupling pump light lens L and mode locking oscillator；Characterized in that,
The mode locking oscillator include reflecting mirror M1, gain crystal C, Fabry pool sieve etalon, outgoing mirror M2, plano-concave mirror M3 and Mode-locking device SESAM；
Fabry pool sieve etalon includes the transmission that the outgoing light direction along the semiconductor pumping sources LD sets gradually Mirror E1 and diaphotoscope E2, diaphotoscope E1 and diaphotoscope E2 are provided with governor motion, and the governor motion is along described half The outgoing light direction of conductor pumping source LD carries out relative position regulation to diaphotoscope E1 and diaphotoscope E2, to adjust State the distance between diaphotoscope E1 and diaphotoscope E2；
The reflecting mirror M1, the gain crystal C, Fabry pool sieve etalon and the outgoing mirror M2 are partly led along described The outgoing light direction of body pumping source LD sets gradually；
The mode-locking device SESAM and the plano-concave mirror M3 are set successively against the outgoing light direction of the semiconductor pumping sources LD Put, and the outgoing of the optical path direction between the mode-locking device SESAM and the plano-concave mirror M3 and the semiconductor pumping sources LD Light direction is parallel to each other.
2. psec mode-locked laser as claimed in claim 1, it is characterised in that the governor motion includes base, the bottom The fixed lens group part and position-movable translational slide of position fixation are provided with seat；
Diaphotoscope E1 is fixedly installed on the fixed lens group part；
Mobile lens component is fixedly installed in the translational slide, diaphotoscope E2 is fixedly installed on the mobile lens group On part.
3. psec mode-locked laser as claimed in claim 2, it is characterised in that the fixed lens group part includes being fixedly installed Fixed mirror bar on the base, diaphotoscope E1 are fixedly installed in the fixed mirror bar, the fixing len It is provided with seat, at the position on the outside of diaphotoscope E1 in fixing trim ring, the fixed mirror bar, positioned at the transmission Fixed spacer ring is provided between mirror E1 and the fixing trim ring；
The translational slide includes fixed plate and movable plate, and the fixed plate is fixed on the base, the bottom of the movable plate Face arranges fluted, and the groove is set in the fixed plate, and the side of the groove is provided with locking screw holes, the locking Lock-screw is provided with screw；
Moving lens bar is fixedly installed on the movable plate, diaphotoscope E2 is fixedly installed in the moving lens bar, Be provided with the moving lens bar, at the position on the outside of diaphotoscope E2 in mobile trim ring, the moving lens bar, Mobile spacer ring is provided between diaphotoscope E2 and the mobile trim ring；
Mobile jacking block is fixedly installed on the movable plate, is fixedly installed in the fixed plate and the mobile jacking block position pair The adjusting screw rod answered.
4. psec mode-locked laser as claimed in claim 3, it is characterised in that the fixed mirror bar passes through fixation kit spiral shell Nail is fixed on the base；The moving lens bar is fixed on the movable plate by moving assembly screw.
5. the psec mode-locked laser as any one of claim 1-4, it is characterised in that the reflecting mirror M1, described Outgoing mirror M2, the plano-concave mirror M3 and the mode-locking device SESAM constitute vibration chamber.
6. psec mode-locked laser as claimed in claim 5, it is characterised in that reflecting mirror M1 is set to transmit pump light reflection The reflecting mirror of oscillation light.
7. psec mode-locked laser as claimed in claim 6, it is characterised in that the plano-concave mirror M3 is arranged on and gathers oscillation light The burnt position to the mode-locking device SESAM.
8. psec mode-locked laser as claimed in claim 7, it is characterised in that the mode-locking device SESAM is set to partly lead Body saturable absorbing mirror.
9. psec mode-locked laser as claimed in claim 8, it is characterised in that the gain crystal C is set to Nd:YVO4It is brilliant Body.
10. psec mode-locked laser as claimed in claim 8, it is characterised in that the Fabry moors the transmission of sieve etalon Breadth of spectrum line is shown below：
δ v = c 2 π μ d 1 - r r - - - ( 1 )
Wherein, μ be Fabry pool sieve etalon diaphotoscope E1 and diaphotoscope E2 between medium refractive index, D is the distance between described diaphotoscope E1 and diaphotoscope E2 of Fabry pool sieve etalon, and c is the light velocity, and r is described The reflectance of diaphotoscope E1 and diaphotoscope E2 of Fabry pool sieve etalon.
CN201710101007.6A 2017-02-23 2017-02-23 Picosecond mode-locking laser Pending CN106602396A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201256139Y (en) * 2008-08-01 2009-06-10 攀钢集团研究院有限公司 Special fixture for scanning electronic microscope
CN102832536A (en) * 2012-08-16 2012-12-19 中国科学院光电研究院 Resonant cavity for outputting mode-locking picosecond laser and mode-locking picosecond laser device
CN204650051U (en) * 2015-05-15 2015-09-16 无锡光云通信科技有限公司 A kind of optical fiber assembling fixedly uses tool
CN105301758A (en) * 2015-11-19 2016-02-03 中国科学院化学研究所 Picosecond mid-infrared pulse conversion device based on Fabry-Perot interferometer
CN206611008U (en) * 2017-02-23 2017-11-03 南京锐通激光科技有限公司 A kind of psec mode-locked laser

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201256139Y (en) * 2008-08-01 2009-06-10 攀钢集团研究院有限公司 Special fixture for scanning electronic microscope
CN102832536A (en) * 2012-08-16 2012-12-19 中国科学院光电研究院 Resonant cavity for outputting mode-locking picosecond laser and mode-locking picosecond laser device
CN204650051U (en) * 2015-05-15 2015-09-16 无锡光云通信科技有限公司 A kind of optical fiber assembling fixedly uses tool
CN105301758A (en) * 2015-11-19 2016-02-03 中国科学院化学研究所 Picosecond mid-infrared pulse conversion device based on Fabry-Perot interferometer
CN206611008U (en) * 2017-02-23 2017-11-03 南京锐通激光科技有限公司 A kind of psec mode-locked laser

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