CN106601799A - Crimping-type IGBT device - Google Patents
Crimping-type IGBT device Download PDFInfo
- Publication number
- CN106601799A CN106601799A CN201510683900.5A CN201510683900A CN106601799A CN 106601799 A CN106601799 A CN 106601799A CN 201510683900 A CN201510683900 A CN 201510683900A CN 106601799 A CN106601799 A CN 106601799A
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- Prior art keywords
- igbt device
- well region
- metal electrode
- compression joint
- joint type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 69
- 239000002184 metal Substances 0.000 claims abstract description 69
- 230000006835 compression Effects 0.000 claims description 40
- 238000007906 compression Methods 0.000 claims description 40
- 230000001413 cellular effect Effects 0.000 claims description 17
- 230000003139 buffering effect Effects 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 230000001934 delay Effects 0.000 claims 1
- 238000002788 crimping Methods 0.000 abstract description 14
- 239000002699 waste material Substances 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 108010022579 ATP dependent 26S protease Proteins 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
Abstract
The invention discloses a crimping-type IGBT device, and the device comprises an IGBT chip and a first metal electrode. There is a first preset distance between the first metal electrode and crimping region of an emitter electrode of the IGBT chip and the opposite edges of a first well region, and there is a second preset distance between the first metal electrode and crimping region of the emitter electrode and the opposite edges of a second well region. The first and second preset distances can be set according to a specific IGBT device, so as to enable the pressure generated by first metal electrode and the emitter electrode during crimping not to affect the first and second well regions of the IGBT chip, and prevent the first and second well regions from generating electric characteristic changes. Therefore, compared with a conventional IGBT device, the IGBT device provided by the invention does not need to design a special crimping region on the IGBT chip, thereby avoiding the waste of the IGBT chip, saving resources, reducing the cost, and reducing the size of the IGBT device.
Description
Technical field
The present invention relates to IGBT technical fields, in particular, are related to a kind of compression joint type IGBT device.
Background technology
IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) device is one
Voltage-controlled type power device is planted, MOSFET (Metal-Oxide-Semiconductor Field-Effect are had concurrently
Transistor, Metal-Oxide Semiconductor field-effect transistor) high input impedance and BJT (Bipolar
Junction Transistor, bipolar junction transistor) low conduction voltage drop of both advantage, due to IGBT
Device has the advantages that driving power is little and saturation pressure is reduced, and current IGBT device is used as a kind of high-voltage switch gear
It is widely applied to every field.
The colelctor electrode at the igbt chip back side is directly welded at IGBT by traditional IGBT device in encapsulation
On the electrically-conductive backing plate of device, and positive emitter stage is then connected to the outer electrode of IGBT device by lead
On, but because lead itself has stray inductance, and lead cannot conduct heat, and result in IGBT
Device cannot completely play in high-power applications the potentiality of itself.Therefore, it is existing to propose a kind of pressure
Formulas I GBT device is connect, to solve the above problems, but existing compression joint type IGBT device is to igbt chip
Waste it is excessive, and the volume of IGBT device is big.
The content of the invention
In view of this, the invention provides a kind of compression joint type IGBT device, reduces to igbt chip
Waste, saved resource, reduce cost, and reduce the volume of IGBT device.
For achieving the above object, the technical scheme that the present invention is provided is as follows：
A kind of compression joint type IGBT device, including igbt chip, the igbt chip includes at least one
Cellular, the cellular includes emitter stage, colelctor electrode, the first well region and the second well region, and first trap
Area is identical with the conduction type of the second well region, and the compression joint type IGBT device also includes：First metal electrode；
Wherein, first metal electrode is crimped on the surface of the emitter stage, and first metal electricity
Have between the edge relative with the crimp region of the emitter stage and first well region of pole first it is default away from
From first metal electrode edge relative with second well region with the crimp region of the emitter stage
Between have the second predeterminable range.
Preferably, first metal electrode and the crimp region of the emitter stage are convex shape.
Preferably, the compression joint type IGBT device includes：Second metal electrode；
Wherein, second metal electrode is crimped on the colelctor electrode surface.
Preferably, first metal electrode and second metal electrode are copper electrode.
Preferably, it is additionally provided with the first buffering between first metal electrode and the emitter stage to lead
Electric layer.
Preferably, it is additionally provided with the second buffering between second metal electrode and the colelctor electrode to lead
Electric layer.
Preferably, the first buffering conductive layer and the second buffering conductive layer are molybdenum layer.
Preferably, first well region and the second well region are p-type and well region are lightly doped.
Compared at least concrete advantages below of technical scheme that prior art, the present invention are provided：
A kind of compression joint type IGBT device that the present invention is provided, wherein, compression joint type IGBT device includes IGBT
Chip, the igbt chip includes at least one cellular, the cellular include emitter stage, colelctor electrode, the
One well region and the second well region, and the conduction type of first well region and the second well region is identical, the crimping
Formulas I GBT device also includes：First metal electrode；Wherein, first metal electrode is crimped on described
The surface of emitter stage, and first metal electrode and the crimp region of the emitter stage and first trap
There is the first predeterminable range, the pressure of first metal electrode and the emitter stage between the relative edge in area
Connect and have between the edge relative with second well region of region the second predeterminable range.
As shown in the above, the crimp region of the emitter stage of the first metal electrode and igbt chip and first
There is the first predeterminable range between the relative edge of well region, and, the pressure of the first metal electrode and emitter stage
Connect and have between the edge relative with the second well region of region the second predeterminable range, can be according to specific IGBT
Device sets the first predeterminable range and the second predeterminable range, so that the first metal electrode and emitter stage are in crimping
When the pressure that produces do not affect first well region and the second well region of igbt chip, it is to avoid the first well region and second
Well region produces the change of electrical characteristics.Accordingly, with respect to the technology that existing IGBT device, the present invention are provided
Scheme on igbt chip without the need for designing special crimp region, it is to avoid the waste of igbt chip, section
About resource, reduces cost, and reduces the volume of IGBT device.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to reality
Apply the accompanying drawing to be used needed for example or description of the prior art to be briefly described, it should be apparent that, below
Accompanying drawing in description is only embodiments of the invention, for those of ordinary skill in the art, not
On the premise of paying creative work, can be with according to the other accompanying drawings of accompanying drawing acquisition for providing.
Fig. 1 is a kind of structural representation of existing compression joint type IGBT device；
A kind of structural representation of compression joint type IGBT that Fig. 2 is provided for the embodiment of the present application；
The structural representation of another kind of compression joint type IGBT that Fig. 3 is provided for the embodiment of the present application.
Specific embodiment
As described in background, waste of the existing compression joint type IGBT device to igbt chip is excessive, and
The volume of IGBT device is big.Inventor's research finds that the main cause for the problems referred to above occur is igbt chip
Life is designed with special crimp region.Specifically, in the cellular of igbt chip, well region is pressure-sensitive area
Domain, therefore well region can occur under pressure obvious electrical property change.
Therefore, it is a kind of structural representation of existing compression joint type IGBT device with reference to shown in Fig. 1, its
In, IGBT device includes the first metal electrode 200 crimped with the front of igbt chip 100, and, with
Second metal electrode 300 of the back side of igbt chip 100 crimping, the front of igbt chip 100 is divided into effective district
Domain 101 and crimp region 102, effective coverage 101 includes multiple cellulars, and crimp region 102 is mixed for p-type
Miscellaneous region.Wherein, the crimp region 102 of igbt chip 100 is then to realize crimping with the first metal electrode 200
Region, and the first metal electrode 200 correspondence crimp region 101 part be convex shape, it is to avoid with IGBT
Other regional connectivities of chip.As seen from Figure 1, the igbt chip in existing IGBT device is designed with spy
Different crimp region, to realize crimping between metal electrode, and then causes the waste of igbt chip excessive,
And the volume of final obtained IGBT device is excessive.
Based on this, the invention provides a kind of compression joint type IGBT device, including igbt chip, the IGBT
Chip includes at least one cellular, and the cellular includes emitter stage, colelctor electrode, the first well region and the second trap
Area, and the conduction type of first well region and the second well region is identical, the compression joint type IGBT device is also wrapped
Include：First metal electrode；
Wherein, first metal electrode is crimped on the surface of the emitter stage, and first metal electricity
Have between the edge relative with the crimp region of the emitter stage and first well region of pole first it is default away from
From first metal electrode edge relative with second well region with the crimp region of the emitter stage
Between have the second predeterminable range.
The emitter stage of the compression joint type IGBT device that the present invention is provided, its first metal electrode and igbt chip
The crimp region edge relative with the first well region between there is the first predeterminable range, and, the first metal
There is the second predeterminable range between the crimp region of the electrode and emitter stage edge relative with the second well region, can
To set the first predeterminable range and the second predeterminable range according to specific IGBT device, so that the first metal is electric
The pressure that pole and emitter stage are produced in crimping does not affect first well region and the second well region of igbt chip, keeps away
Exempt from the first well region and the second well region produces the change of electrical characteristics.Accordingly, with respect to existing IGBT device,
The technical scheme that the present invention is provided on igbt chip without the need for designing special crimp region, it is to avoid
The waste of igbt chip, has saved resource, reduces cost, and reduces the volume of IGBT device.
It is more than the core concept of the present invention, to enable the above objects, features and advantages of the present invention more
Plus become apparent, the specific embodiment of the present invention is described in detail below in conjunction with the accompanying drawings.
Many details are elaborated in the following description in order to fully understand the present invention, but this
Bright to be different from alternate manner described here implementing using other, those skilled in the art can be with
Similar popularization, therefore the present invention are done in the case of without prejudice to intension of the present invention not by following public concrete
The restriction of embodiment.
Secondly, the present invention is described in detail with reference to schematic diagram, is just when the embodiment of the present invention is described in detail
In explanation, represent that the profile of device architecture can disobey general ratio and make partial enlargement, and schematic diagram is only
It is example, its here should not limit the scope of protection of the invention.Additionally, should be comprising length in actual fabrication
The three-dimensional space of degree, width and depth.
With reference to shown in Fig. 2 and Fig. 3, a kind of compression joint type IGBT device that the embodiment of the present application is provided is carried out
Detailed description.
With reference to shown in Fig. 2, a kind of structural representation of the compression joint type IGBT device provided for the embodiment of the present application
Figure, it should be noted that the embodiment of the present application is by taking a cellular as an example, is carried out to compression joint type IGBT device
Explanation.Wherein, IGBT device includes igbt chip, and igbt chip includes at least one cellular 10,
Cellular 10 includes emitter stage 11, colelctor electrode 12, the first well region 13 and the second well region 14, and the first well region
13 is identical with the conduction type of the second well region 14, and optionally, it is light that the first well region and the second well region are p-type
Doped well region, wherein, compression joint type IGBT device also includes：First metal electrode 20；
Wherein, the first metal electrode 20 is crimped on the surface of emitter stage 11, and the first metal electrode 20 with
There is the first predeterminable range d1 between crimp region S of emitter stage 11 edge relative with the first well region 13,
Have between first metal electrode 20 edge relative with crimp region S of emitter stage 11 and the second well region 14
There is the second predeterminable range d2.
It should be noted that the igbt chip that the embodiment of the present application is provided, its cellular is also including N+ (N
Type ion heavy doping) source region, drift region, grid, gate oxide, P+ (p-type ion heavy doping) collection
Electric area etc., its 26S Proteasome Structure and Function is same as the prior art, therefore does not make unnecessary repeating.
As shown in the above, the compression joint type IGBT device that the embodiment of the present application is provided, wherein, the first gold medal
Category electrode and the crimp region of emitter stage, preset respectively between the edge relative with the first well region with first
There is the second predeterminable range between distance, and the edge relative with the second well region.Wherein, first it is default away from
Safe distance is from the second predeterminable range, i.e., by the crimping area of the first metal electrode and emitter stage
Design safety distance between the edge relative with well region of domain, can make decline of pressure in the range of safe distance,
Ensure that the pressure between the first metal electrode and emitter stage is not impacted to well region, and then avoid trap
The electrical characteristics in area change, so that obtained IGBT device is unqualified.In addition, compared to existing
Compression joint type IGBT device, the technical scheme that the embodiment of the present application is provided is special without the need for designing on igbt chip
Different crimp region, it is to avoid the waste of igbt chip, has saved resource, reduces cost, and reduces
The volume of IGBT device.
It should be noted that the embodiment of the present application is concrete for the first predeterminable range and the second predeterminable range
Numerical value is not specifically limited, and needs to carry out concrete calculating analysis according to practical application.
Further, for convenience crimping is processed, and avoids other regions of the first metal electrode and cellular from connecting
Logical, the first metal electrode that the embodiment of the present application is provided is convex shape with the crimp region of emitter stage.In addition,
With reference to shown in Fig. 1, the compression joint type IGBT device that the embodiment of the present application is provided includes：Second metal electrode
30；Wherein, the second metal electrode 30 is crimped on the surface of colelctor electrode 12.The embodiment of the present application is for first
The concrete material of metal electrode and the second metal electrode is also not specifically limited, and optionally, the application is implemented
The first metal electrode and the second metal electrode that example is provided is copper electrode.
Based on the compression joint type IGBT device that Fig. 2 is provided, in order to ensure between metal electrode and igbt chip
Pressure it is uniform, the embodiment of the present application additionally provides a kind of compression joint type igbt chip, with specific reference to Fig. 3
It is shown, the structural representation of another kind of compression joint type IGBT device provided for the embodiment of the present application, wherein,
The IGBT device that Fig. 3 is provided is identical with the structure division of the IGBT device that Fig. 2 is provided, and difference is：
The IGBT device that the application Fig. 3 is provided, between the first metal electrode 20 and emitter stage 11 also
It is provided with the first buffering conductive layer 40.
Further, with reference to shown in Fig. 3, the IGBT device that the application Fig. 3 is provided, positioned at the second metal
The second buffering conductive layer 50 is additionally provided between electrode 30 and colelctor electrode 12.
Wherein, conductive buffer layer be used to improving the surface of metal electrode and the rough of igbt chip and
The situation of the pressure inequality for causing, protection igbt chip is not damaged by crimping.Wherein, conductie buffer
Layer is at least provided with the crimp region of metal electrode and igbt chip, it is to avoid other areas with igbt chip
Domain connects, and the underproof situation of IGBT device occurs.The embodiment of the present application is for the material of conductive buffer layer
Matter is not specifically limited, and the first buffering conductive layer and the second buffering conductive layer can be molybdenum layer.
A kind of compression joint type IGBT device that the embodiment of the present application is provided, wherein, compression joint type IGBT device bag
Igbt chip is included, the igbt chip includes at least one cellular, and the cellular includes emitter stage, collection
Electrode, the first well region and the second well region, and the conduction type of first well region and the second well region is identical,
The compression joint type IGBT device also includes：First metal electrode；Wherein, the first metal electrode pressure
It is connected to the surface of the emitter stage, and crimp region and institute of first metal electrode with the emitter stage
State between the relative edge of the first well region have the first predeterminable range, first metal electrode with described
There is the second predeterminable range between the crimp region of the emitter-base bandgap grading edge relative with second well region.
As shown in the above, the crimp region of the emitter stage of the first metal electrode and igbt chip and first
There is the first predeterminable range between the relative edge of well region, and, the pressure of the first metal electrode and emitter stage
Connect and have between the edge relative with the second well region of region the second predeterminable range, can be according to specific IGBT
Device sets the first predeterminable range and the second predeterminable range, so that the first metal electrode and emitter stage are in crimping
When the pressure that produces do not affect first well region and the second well region of igbt chip, it is to avoid the first well region and second
Well region produces the change of electrical characteristics.Accordingly, with respect to existing IGBT device, the embodiment of the present application is provided
Technical scheme without the need for designing special crimp region on igbt chip, it is to avoid the wave of igbt chip
Take, saved resource, reduce cost, and reduce the volume of IGBT device.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or use
The present invention.Various modifications to these embodiments will be for those skilled in the art aobvious and easy
See, generic principles defined herein can without departing from the spirit or scope of the present invention,
Realize in other embodiments.Therefore, the present invention is not intended to be limited to embodiment illustrated herein, and
It is to fit to the most wide scope consistent with principles disclosed herein and features of novelty.
Claims (8)
1. a kind of compression joint type IGBT device, including igbt chip, the igbt chip is included at least
One cellular, the cellular includes emitter stage, colelctor electrode, the first well region and the second well region, and described the
The conduction type of one well region and the second well region is identical, it is characterised in that the compression joint type IGBT device is also wrapped
Include：First metal electrode；
Wherein, first metal electrode is crimped on the surface of the emitter stage, and first metal electricity
Have between the edge relative with the crimp region of the emitter stage and first well region of pole first it is default away from
From first metal electrode edge relative with second well region with the crimp region of the emitter stage
Between have the second predeterminable range.
2. compression joint type IGBT device according to claim 1, it is characterised in that first gold medal
Category electrode is convex shape with the crimp region of the emitter stage.
3. compression joint type IGBT device according to claim 1, it is characterised in that the compression joint type
IGBT device includes：Second metal electrode；
Wherein, second metal electrode is crimped on the colelctor electrode surface.
4. compression joint type IGBT device according to claim 3, it is characterised in that first gold medal
Category electrode and second metal electrode are copper electrode.
5. compression joint type IGBT device according to claim 3, it is characterised in that positioned at described
The first buffering conductive layer is additionally provided between one metal electrode and the emitter stage.
6. compression joint type IGBT device according to claim 5, it is characterised in that positioned at described
The second buffering conductive layer is additionally provided between two metal electrodes and the colelctor electrode.
7. compression joint type IGBT device according to claim 6, it is characterised in that described first delays
Rush conductive layer and the second buffering conductive layer is molybdenum layer.
8. compression joint type IGBT device according to claim 1, it is characterised in that first trap
Area and the second well region are p-type and well region are lightly doped.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510683900.5A CN106601799A (en) | 2015-10-20 | 2015-10-20 | Crimping-type IGBT device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510683900.5A CN106601799A (en) | 2015-10-20 | 2015-10-20 | Crimping-type IGBT device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106601799A true CN106601799A (en) | 2017-04-26 |
Family
ID=58554821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510683900.5A Pending CN106601799A (en) | 2015-10-20 | 2015-10-20 | Crimping-type IGBT device |
Country Status (1)
| Country | Link |
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| CN (1) | CN106601799A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003174164A (en) * | 2001-12-07 | 2003-06-20 | Shindengen Electric Mfg Co Ltd | Vertical mos semiconductor device and its manufacturing method |
| CN202120918U (en) * | 2011-07-04 | 2012-01-18 | 润奥电子(扬州)制造有限公司 | Crimp-connection IGBT (Insulated Gate Bipolar Transistor) device |
| CN102832239A (en) * | 2012-07-27 | 2012-12-19 | 无锡凤凰半导体科技有限公司 | High-pressure-resistant insulated gate bipolar transistor (IGBT) |
| CN104810283A (en) * | 2015-05-13 | 2015-07-29 | 国网智能电网研究院 | IGBT (Insulated Gate Bipolar Transistor) chip manufacturing method for crimped type package |
-
2015
- 2015-10-20 CN CN201510683900.5A patent/CN106601799A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003174164A (en) * | 2001-12-07 | 2003-06-20 | Shindengen Electric Mfg Co Ltd | Vertical mos semiconductor device and its manufacturing method |
| CN202120918U (en) * | 2011-07-04 | 2012-01-18 | 润奥电子(扬州)制造有限公司 | Crimp-connection IGBT (Insulated Gate Bipolar Transistor) device |
| CN102832239A (en) * | 2012-07-27 | 2012-12-19 | 无锡凤凰半导体科技有限公司 | High-pressure-resistant insulated gate bipolar transistor (IGBT) |
| CN104810283A (en) * | 2015-05-13 | 2015-07-29 | 国网智能电网研究院 | IGBT (Insulated Gate Bipolar Transistor) chip manufacturing method for crimped type package |
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Application publication date: 20170426 |