CN106569249B - A kind of spaceborne Si-APD detector reverse biased Automatic adjustment method - Google Patents
A kind of spaceborne Si-APD detector reverse biased Automatic adjustment method Download PDFInfo
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- CN106569249B CN106569249B CN201610899891.8A CN201610899891A CN106569249B CN 106569249 B CN106569249 B CN 106569249B CN 201610899891 A CN201610899891 A CN 201610899891A CN 106569249 B CN106569249 B CN 106569249B
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- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
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Abstract
The invention discloses a kind of spaceborne Si-APD detector reverse biased self-checking device and methods, include: multiple Si-APD detector modules such as FPGA, temperature sensor, digital potentiometer, high-voltage power module and S1, S2 ..., Sn.Each Si-APD detector module composition is just the same, by slide rheostat Radj, resistance R1, resistance R2, capacitor C1, Si-APD (avalanche silicon diode) detector composition.Before normal work, the bias range of each Si-APD detector can be measured in experimental situation, and find out the matched curve that reverse biased varies with temperature.The value of feedback varied with temperature according to partial pressure coefficient and digital potentiometer that matched curve calculates slide rheostat.The present invention solves the problems, such as same type detector as brought by the factors bring difference bias requirement such as technique, manufacture, to realize the lightweight and miniaturization of spaceborne Si-APD detector reverse biased self-checking device.
Description
Technical field
The present invention relates to X-ray pulsar Single Particle Detection technical field, in particular to a kind of spaceborne Si-APD detector
Reverse biased self-checking device and method, the adjusting applied to space X ray pulse star single particle detector reverse biased.
Background technique
In deep-space detection field, the X-ray that neutron star the issues benchmark stable as one can be used as navigational reference.
There was only single photon magnitude due to reaching the spectral energy after LEO, for X-ray single-particle capture there are many method, such as
Proportional counter, electron multiplication CCD (EMCCD), semiconductor detector etc..
The operating voltage of avalanche silicon diode (Si-APD) detector is the key that can it work normally.Voltage is excessive
When, snowslide caused by Si-APD internal thermal noise can cause Si-APD successively to export pulse, that is, enter dark count number state, light
Son output is submerged in these pulses；When voltage is smaller, Si-APD avalanche gain is insufficient or avalanche effect can not occur, so that single
Photon output is submerged in back noise, can not be detected.Si-APD applying bias voltage work adjustable extent is adulterated according to Si-APD
Thickness degree is different and different, usually 100V magnitude.Reflected according to laboratory vacuum environmental testing result, is faced with batch Si-APD
Snowslide reverse bias voltage in boundary's is different or even difference is larger, but bias voltage over temperature changes linearly.In addition, according to
Si-APD detector detects demand, and critical snowslide reverse bias voltage is a value range.Finally, Si-APD detector is in-orbit
Temperature change can be generated by solar radiation when work, and there are temperature difference when operation on orbit and ground experiment, this is just needed pair
Si-APD detector reverse bias voltage is adjusted in real time.
The advantages of due to Si-APD detector due to its own, it is suitable for the detection of X-ray single photon, but Si-APD faces
The control of boundary's avalanche voltage, when especially with multiple Si-APD and higher selected detector bias, conventional method will make whole
Volume, power consumption of a circuit etc. become larger.
Summary of the invention
The purpose of the present invention is: overcome the deficiencies of the prior art and provide a kind of spaceborne Si-APD detector reverse biased from
Dynamic regulating device and method solve same type detector since the factors bring difference bias requirement such as technique, manufacture is brought
The problem of, to realize the lightweight and miniaturization of spaceborne Si-APD detector reverse biased self-checking device.
Above-mentioned purpose of the invention can be realized by following scheme: a kind of spaceborne Si-APD detector reverse biased is adjusted automatically
Regulating device, comprising: multiple Si- such as FPGA, temperature sensor, digital potentiometer, high-voltage power module and S1, S2 ..., Sn
APD detector module.Each Si-APD detector module composition is just the same, by slide rheostat Radj, resistance R1, electricity
Hinder R2, capacitor C1, Si-APD (avalanche silicon diode) detector composition；
The temperature sensor U2 is for perceiving spaceborne Si-APD detector reverse biased self-checking device local environment
Temperature, and sensing results are exported to FPGA；FPGA is connected with digital potentiometer U3, and the temperature value of acquisition is converted into number by FPGA
Configuration code needed for potentiometer U3 changes the variation of digital potentiometer U3 output voltage by sending the configuration code in real time；High pressure
Power module U4 is connected with digital potentiometer U3, with the variation of digital potentiometer U3 output voltage, high-voltage power module U4 high
Pressure output also changes in real time；High-voltage power module U4 and slide rheostat Radj1 foot be connected, slide rheostat Radj2
Foot is for manually adjusting and being connected with one end of resistance R1, slide rheostat Radj3 feet ground connection, obtain slide rheostat in advance
RadjPartial pressure coefficient, i.e. position where sliding feet 2, and then realize the partial pressure to high-pressure modular output high pressure, wherein R23It indicates
Slide rheostat RadjFoot 2 and foot 3 between resistance value；Multiple Si-APD detector modules such as S1, S2 ..., Sn constitute one
Sample.Wherein resistance R1 and capacitor C1 constitute R-C passive low-pass filter in detector module, filter out for high pressure noise, resistance
One end of capacitor C1 of the other end of R1 with one end of resistance R2 and for high voltage power supply filtering is connected；The other end of capacitor C1
Ground connection, the other end of resistance R2 and output end, that is, photoelectric current output end I of Si-APD detectoroutIt is connected, Si-APD detector is another
Side ground connection.
High voltage output and the low pressure input of the high-voltage power module U4 is that the output voltage of digital potentiometer U3 is to fix
The relationship of ratio 40:1, input low pressure are up to+5V.
Capacitor C1, slide rheostat R in the detector moduleadj, resistance R1, resistance R2 be the high-voltage device of resistance to 500V
Part.
The slide rheostat RadjMaximum value be 2M ohm, and power is greater than 0.05W.
Capacitor C1 in the detector module is 10nF~1000nF；Preferably to realize that filter effect, C1 are available more
The high voltage value capacitor parallel connection substitution of a difference capacitance.
Resistance R1 in the detector module is 1M ohm, and resistance R2 is 100M ohm.
The digital potentiometer U3 works in partial pressure mode, to control the change of the low pressure input of high-voltage power module U4
Change, and the voltage for controlling the configuration code of digital potentiometer U3 partial pressure slide head and being controlled is linear changing relation.
A kind of spaceborne Si-APD detector reverse biased Automatic adjustment method, implementation method are as follows:
(1) under vacuum experiment room environmental, the same model Si-APD detector reverse bias voltage of selection becomes with temperature
Change relationship is measured, and finds out each Si-APD detector maximum reverse bias voltage and minimum in critical avalanche condition
The linear relationship between expression formula that reverse bias voltage varies with temperature；
(2) using the linear relationship between expression determined in step (1), R in each Si-APD detector module is calculatedadj
Partial pressure coefficientAnd by slide rheostat Radj2 feet adjust to corresponding position,
Middle R23Indicate slide rheostat RadjFoot 2 and foot 3 between resistance value；
(3) it determines the relational expression of digital potentiometer U3 configuration code and temperature and is pre-stored in FPGA；
(4) digital potentiometer U3 receives the voltage of the exportable 0~5V of FPGA configuration code, is exported later to high-voltage power module
U4 realizes 40 times of boostings, and then realizes the voltage output of 0~200V；
(5) multiple Si-APD detector modules such as the supply of high-voltage power module U4 output voltage S1, S2 ..., Sn；
(6) finally, FPGA utilizes the pass of configuration code and temperature by temperature sensor U2 real-time perception operating ambient temperature
System sends corresponding configuration code to digital potentiometer U3 in real time, and then controls the variation of high-voltage power module U4 output voltage, completes
The automatic control of each optimal critical bias of Si-APD detector module.
Linear expression relational expression in the step (1) are as follows:
Wherein,
The critical reverse biased of maximum for i-th of detector in critical avalanche region,Facing for i-th of detector
The minimum critical reverse biased of boundary avalanche region,For matched curve coefficient, T is transformation temperature.
The relationship that digital potentiometer U3 configuration code D is varied with temperature in the step (1)
Wherein, D is the configuration code of digital potentiometer U3, and T is environment temperature locating for spaceborne Si-APD detector, khv、bhv
For coefficient.
The advantages of the present invention over the prior art are that:
(1) the capacitor C1 in detector module of the present invention and resistance R1 constitutes low-pass filtering, filters out detector bias noise,
It is effectively improved detector signal-to-noise ratio；
(2) tool of the invention by according to detector charactorizations and work requirements, calculating the resistance R2 in detector module
Body value efficiently accomplishes switching of the detector (U5) from critical avalanche condition to cancellation state；
(3) present invention perceives detection system local environment temperature by temperature sensor U2, and U1 is according to its temperature value and in advance
Determine matched curve and calculate detector reverse bias voltage under Current Temperatures, changes to send command adapted thereto to digital potentiometer U3
The variation of digital potentiometer U3 output voltage, to change the variation of high-voltage power module U4 output high pressure；
(4) present invention passes through slide rheostat RadjChange high-voltage power module U4 to be added on each detector module
Bias overcomes the problems, such as same type detector as brought by the factors bring difference bias requirement such as technique, manufacture, thus real
The optimal automatic control of existing detector difference bias.
Detailed description of the invention
Fig. 1 is a kind of spaceborne Si-APD detector reverse biased Automatic adjustment method schematic diagram of the invention,
Fig. 2 show under fixed temperature Si-APD detector and changes schematic diagram with reverse biased,
Fig. 3 is that digital potentiometer U3 of the present invention respectively holds V diagram under partial pressure state.
Specific embodiment
The present invention is described in further detail in the following with reference to the drawings and specific embodiments.
As shown in Figure 1, a kind of spaceborne Si-APD detector reverse biased self-checking device provided by the invention, including
FPGA U1, temperature sensor U2, digital potentiometer U3, high-voltage power module U4, slide rheostat Radj, resistance R1, resistance R2,
Capacitor C1, Si-APD detector U5, photoelectric current output end Iout；
Including FPGA U1, temperature sensor U2, digital potentiometer U3, high-voltage power module U4, slide rheostat Radj, electricity
Hinder R1, resistance R2, capacitor C1, Si-APD detector U5, photoelectric current output end Iout；
Wherein: U1 is connected with temperature sensor U2 to be perceived for environment temperature；U1 is connected with digital potentiometer U3, and U1 passes through
Send the variation that command information changes digital potentiometer U3 output voltage in real time；High-voltage power module U4 and digital potentiometer U3 phase
Even, with the variation of the output voltage of digital potentiometer U3, high-voltage power module U4 output high pressure also changes；High voltage power supply
Module U4 and slide rheostat Radj1 foot be connected, slide rheostat Radj2 feet be used for manually adjust slide plate position and with
One end of resistance R1 is connected, slide rheostat Radj3 feet ground connection；The other end of resistance R1 and one end of resistance R2 and high pressure
One end of power filtering capacitor C1 is connected；The other end of capacitor C1 is grounded, the other end of resistance R2 and the output end of detector U5
That is, U5 photoelectric current output end IoutIt is connected, the other side detector U5 ground connection.
In a kind of above-mentioned spaceborne Si-APD detector reverse biased Automatic adjustment method, in Si-APD detector module
Capacitor C1, slide rheostat Radj, resistance R1, resistance R2 be high voltage value device.
In a kind of above-mentioned spaceborne Si-APD detector reverse biased Automatic adjustment method, slide rheostat RadjMost
Big resistance value is 2M ohm, and power is greater than 0.05W.
In a kind of above-mentioned spaceborne Si-APD detector reverse biased Automatic adjustment method, in Si-APD detector module
Resistance R1 and capacitor C1 constitute R-C passive low-pass filter, filter out for high pressure noise.Wherein, resistance R1 is 1M ohm, electricity
Appearance C1 is 10nF~1000nF, and preferably to realize filter effect, C1 here can use the high voltage value electricity of multiple and different capacitances
Hold substitution in parallel.
In a kind of above-mentioned spaceborne Si-APD detector reverse biased Automatic adjustment method, resistance R2 is with Si-APD used
The characteristic and working method of detector have a much relations, and resistance value cannot too greatly can not be too small.It is too big, due to thermal noise and spy
Surveying device dark current noise etc. influences, it will making the signal-to-noise ratio of system significantly reduces.It is too small, when avalanche breakdown occurs for detector, no
It can effectively be quenched, damage system, be unfavorable for system detection X-ray single-particle.Needed for comprehensive selected detector and detection, resistance is taken
R2 is 100M ohm.
As shown in Fig. 2, change schematic diagram with reverse biased for Si-APD detector under fixed temperature, wherein avalanche diode
The breakdown reverse voltage (being about 160V shown in Fig. 2) for being demarcated as detector of mode and Geiger mode angular position digitizer.To detect X pulsar list
Particle, detector need to work in critical avalanche region, i.e., obtain big gain as far as possible, but do not allow access into Geiger mode angular position digitizer and (increase
It is beneficial infinitely great).When detector is quenched, detector will (gain levels off at this time in photodiode mode as shown in the figure
0)。
Key of the invention is to determine the slide rheostat R in each Si-APD detector moduleadjPartial pressure coefficientAnd digital potentiometer U3 configuration code variation with temperature relational expression.
By slide rheostat Radj2 feet adjust to 1 position, at this time divide coefficient be 1.Later, note is surveyed according to experiment
Table is recorded, the matched curve that detector reverse bias voltage varies with temperature is acquired:
As shown in Fig. 2, the critical avalanche region of Si-APD detector (gain is very big at this time),Exist for i-th of detector
The critical reverse biased of maximum of critical avalanche region,Minimum critical reverse biased for i-th of detector in critical avalanche region,For matched curve coefficient, T is transformation temperature；
The relationship that the mean value of i-th of detector reverse biased varies with temperature is acquired according to formula (2-1) and formula (2-2)
Formula:
Wherein,
In a kind of above-mentioned spaceborne Si-APD detector reverse biased Automatic adjustment method, acquired according to formula (2-3)
High-voltage power module U4 exports high pressure variation with temperature curve:
VhV=khvT+bhv (2-4)
Wherein, VhVFor high voltage power supply output voltage.
Wherein, N is detector number.
Wherein, round (*) is bracket function, takes integer value nearest after rounding up, such asThen bhv
=145.
In a kind of above-mentioned spaceborne Si-APD detector reverse biased Automatic adjustment method, according to formula (2-3) and public affairs
Formula (2-4) combines slide rheostat RadjSlide rheostat R in each detector module can be acquiredadjPartial pressure adjustment factor
Ci:
Each slide rheostat R is acquired according to formula (2-7)adjUpper R23Resistance value, R23=Ci·Radj, and then adjust every
A slide rheostat RadjUpper 2 foot position；
In a kind of above-mentioned spaceborne Si-APD detector reverse biased Automatic adjustment method, due to selected digital potentiometer
U3 is 8bit control, relational expression of the corresponding configuration code with output voltage are as follows:
Wherein, D is configuration code value, VWSize for digital potentiometer U3 in partial pressure mode lower slider output end voltage, VAFor
Digital potentiometer the U3 end A institute making alive, V under partial pressure modeBFor digital potentiometer U3 under partial pressure mode the end B institute making alive,
As shown in Figure 3.Here VA=5V, VB=0V, so, formula (9) may be expressed as:
In a kind of above-mentioned spaceborne Si-APD detector reverse biased Automatic adjustment method, high-voltage power module U4 output
The relationship of the corresponding input low pressure of high pressure are as follows:
Vhv=40VL (2-10)
Wherein VLIt is inputted for the low pressure of high-voltage power module U4, according to digital potentiometer U3 with the company of high-voltage power module U4
Relationship is connect, there is VL=VW, finally determine that digital potentiometer configuration code D is varied with temperature in conjunction with formula (2-4), (2-9), (2-10)
Relationship:
In a kind of above-mentioned spaceborne Si-APD detector reverse biased Automatic adjustment method, FPGA passes through temperature sensor
The variation of U2 sense ambient temperature sends corresponding configuration code in conjunction with formula (2-11), finally enables each detector effective
Work in critical avalanche condition.
The above, a specific implementation method only of the invention, but scope of protection of the present invention is not limited thereto, appoints
In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of, all by what those familiar with the art
It is covered by the protection scope of the present invention.
The content that description in the present invention is not described in detail belongs to the well-known technique of those skilled in the art.
Claims (11)
1. a kind of spaceborne Si-APD detector reverse biased self-checking device, it is characterised in that include: FPGA, temperature sensor
U2, digital potentiometer U3, high-voltage power module U4 and multiple Si-APD detector modules, each Si-APD detector module structure
At just the same, by slide rheostat Radj, resistance R1, resistance R2, capacitor C1, spaceborne Si-APD (avalanche silicon diode)
Detector；
The temperature sensor U2 for perceiving environment temperature locating for spaceborne Si-APD detector, and by sensing results export to
FPGA；FPGA is connected with digital potentiometer U3, configuration needed for the ambient temperature value of acquisition is converted into digital potentiometer U3 by FPGA
Code changes the variation of digital potentiometer U3 output voltage by sending the configuration code in real time；High-voltage power module U4
It is connected with digital potentiometer U3, with the variation of digital potentiometer U3 output voltage, high-voltage power module U4 High voltage output
Also it changes in real time；High-voltage power module U4 and slide rheostat RadjFoot 1 be connected, slide rheostat RadjFoot 2 be used for
It manually adjusts and is connected with one end of resistance R1, slide rheostat RadjFoot 3 be grounded, in advance obtain slide rheostat RadjPoint
Coefficient, i.e. position where sliding feet 2 are pressed, and then realizes the partial pressure to high-voltage power module U4 output high pressure, wherein R23It indicates
Slide rheostat RadjFoot 2 and foot 3 between resistance value；Wherein resistance R1 and capacitor C1 constitutes R-C passive low-pass filter, filter
Except for high pressure noise, the one of the other end of resistance R1 and one end of resistance R2 and the capacitor C1 for high voltage power supply filtering
End is connected；The other end of capacitor C1 is grounded, the other end of resistance R2 and output end, that is, photoelectric current output end of Si-APD detector
IoutIt is connected, Si-APD detector other side ground connection.
2. a kind of spaceborne Si-APD detector reverse biased self-checking device according to claim 1, it is characterised in that:
It is the pass of fixed proportion 40:1 that High voltage output and the low pressure input of the high-voltage power module, which are the output voltage of digital potentiometer,
System, input low pressure are up to+5V.
3. a kind of spaceborne Si-APD detector reverse biased self-checking device according to claim 1, it is characterised in that:
The capacitor C1, slide rheostat Radj, resistance R1, resistance R2 be the high tension apparatus of resistance to 500V.
4. a kind of spaceborne Si-APD detector reverse biased self-checking device according to claim 1, it is characterised in that:
The slide rheostat RadjMaximum value be 2M ohm, and power is greater than 0.05W.
5. a kind of spaceborne Si-APD detector reverse biased self-checking device according to claim 1, it is characterised in that:
The capacitor C1 is 10nF~1000nF；Preferably to realize that filter effect, C1 can use the high voltage value electricity of multiple and different capacitances
Hold substitution in parallel.
6. a kind of spaceborne Si-APD detector reverse biased self-checking device according to claim 1, it is characterised in that:
The resistance R1 is 1M ohm, and resistance R2 is 100M ohm.
7. a kind of spaceborne Si-APD detector reverse biased self-checking device according to claim 1, it is characterised in that:
The digital potentiometer U3 works in partial pressure mode, to control the variation of the low pressure input of high-voltage power module U4, and controls
The configuration code of digital potentiometer U3 partial pressure slide head is linear changing relation with the voltage controlled.
8. a kind of spaceborne Si-APD detector reverse biased self-checking device according to claim 1, it is characterised in that:
In configuration code needed for the ambient temperature value of acquisition is converted into digital potentiometer U3 by FPGA, configuration code and temperature dependence:
Wherein, D is the configuration code of digital potentiometer U3, and T is environment temperature locating for spaceborne Si-APD detector, khv、bhvTo be
Number.
9. a kind of spaceborne Si-APD detector reverse biased Automatic adjustment method, it is characterised in that implementation method is as follows:
(1) under vacuum experiment room environmental, the same model Si-APD detector reverse bias voltage of selection varies with temperature pass
System is measured, and it is reversed to find out each Si-APD detector maximum reverse bias voltage and minimum in critical avalanche condition
The linear relationship between expression formula of bias voltage over temperature variation；
(2) high pressure through digital potentiometer U3 partial pressure output, i.e. the voltage value V of the foot 2 of digital potentiometer U3 over the ground are determinedhV；
(3) it using the linear relationship between expression determined in step (1), calculates and is slided in each spaceborne Si-APD detector module
Rheostat RadjPartial pressure coefficientAnd by slide rheostat RadjFoot 2 adjust to correspond to
Position, wherein R23Indicate slide rheostat RadjFoot 2 and foot 3 between resistance value；
(4) the configuration code D of digital potentiometer U3 and the relational expression of temperature are determined and is pre-stored in FPGA；
(5) relationship that digital potentiometer U3 configuration code D is varied with temperature is determined, digital potentiometer U3 receives FPGA configuration code can be defeated
The voltage of 0~5V out, after through high-voltage power module U4 realize 0~200V voltage output；
(6) finally, FPGA utilizes the configuration code of digital potentiometer U3 by temperature sensor U2 real-time perception operating ambient temperature
D and temperature dependence send corresponding configuration code to digital potentiometer U3 in real time, and then control high-voltage power module U4 output voltage
Variation, complete the automatic control of each spaceborne optimal critical bias of Si-APD detector.
10. spaceborne Si-APD detector reverse biased Automatic adjustment method according to claim 9, it is characterised in that: institute
State the linear expression relational expression in step (1) are as follows:
Wherein,
The critical reverse biased of maximum for i-th of detector in critical avalanche region,It is i-th of detector in critical snow
The minimum critical reverse biased in area is collapsed,For matched curve coefficient, T is transformation temperature.
11. spaceborne Si-APD detector reverse biased Automatic adjustment method according to claim 9, it is characterised in that: institute
State the relationship that digital potentiometer U3 configuration code D is varied with temperature in step (1)
Wherein, D is the configuration code of digital potentiometer U3, and T is environment temperature locating for spaceborne Si-APD detector, khv、bhvTo be
Number.
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| US5367222A (en) * | 1993-06-01 | 1994-11-22 | Cti Pet Systems, Inc. | Remote gain control circuit for photomultiplier tubes |
| US7828479B1 (en) * | 2003-04-08 | 2010-11-09 | National Semiconductor Corporation | Three-terminal dual-diode system for fully differential remote temperature sensors |
| EP2081213B1 (en) * | 2008-01-18 | 2012-11-28 | ET Enterprises Limited | Drive and measurement circuit for a photomultiplier |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5367222A (en) * | 1993-06-01 | 1994-11-22 | Cti Pet Systems, Inc. | Remote gain control circuit for photomultiplier tubes |
| US7828479B1 (en) * | 2003-04-08 | 2010-11-09 | National Semiconductor Corporation | Three-terminal dual-diode system for fully differential remote temperature sensors |
| EP2081213B1 (en) * | 2008-01-18 | 2012-11-28 | ET Enterprises Limited | Drive and measurement circuit for a photomultiplier |
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