CN109738792A - Signal reading method, device and the SiPM array module of SiPM array - Google Patents
Signal reading method, device and the SiPM array module of SiPM array Download PDFInfo
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- CN109738792A CN109738792A CN201811537972.9A CN201811537972A CN109738792A CN 109738792 A CN109738792 A CN 109738792A CN 201811537972 A CN201811537972 A CN 201811537972A CN 109738792 A CN109738792 A CN 109738792A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
Abstract
The present invention is applicable in electronic information technical field, provide a kind of signal reading method of SiPM array, device and SiPM array module, this method comprises: when the SiPM unit on SiPM array collects optical signal, current signal is converted optical signals to by SiPM unit, pass through the conducting medium layer connecting with SiPM unit, current signal is distributed into the read-out electrode on conducting medium layer, pass through read-out electrode output current signal, it is exported according to the electric current of each read-out electrode, determine location information of the SiPM unit on SiPM array, to pass through the conducting medium layer and read-out electrode that are located in SiPM array substrate, and the components such as discrete resistance capacitance are not used on conducting medium layer, SiPM array size does not need the redesign of component when changing, have Effect ground improves the compression effectiveness of SiPM array read-out channel, convenient for the extension of SiPM array and integrated.
Description
Technical field
The invention belongs to electronic information technical field more particularly to a kind of signal reading method of SiPM array, device and
SiPM array module.
Background technique
SiPM is silicon photoelectric multiplier, is mainly used for detecting faint optical signal, and the light pulse detected is converted to electricity
Pulse is flowed, these current impulses are then received by reading circuit, these current impulses are handled by corresponding processor, are obtained
The information for being included to detected optical signal.
SiPM array is a kind of detector for detecting faint optical signal location information, on two-dimensional surface that multiple SiPM are mono-
Member is used as photosensitive element, is equipped with corresponding reading circuit to obtain the information of detected light.Generally, each SiPM unit is independent
Signal all the way is exported, read-out channel all the way is needed.However, with the increase of detection area and the diminution of each probe unit, one
SiPM element number is more and more in a array, and the huge read-out electronics of number of channels are difficult to reality in concrete engineering application
It is existing.
Currently, the reading method of SiPM array mainly has individual passage to read, resistor network is read and ranks are read.Individually
Channel reads the read-out channel all the way of each SiPM unit configuration in as array, which has which position signal just illustrates
SiPM unit detects optical signal, and this method cannot achieve the compression of read-out channel, in the case of read-out channel number increases
It is not applicable.Resistor network reading is that the current signal for being detected the SiPM unit of different location in array is linked into resistance net
The different electricity outlets of network carry out inversion reckoning according to electric current semaphore on electricity outlet and obtain the location information of signal, the party
Method may be implemented channel compressions but need to select different resistive elements according to actual array size, realize complicated and be difficult to collect
At.Ranks reading method is to carry out current distributing or voltage using resistance or capacitor respectively respectively on line direction or column direction
Partial pressure can carry out channel compressions, but this method dependent resistor or capacitance component are realized, need weight after line number or columns change
New design hardware, and be difficult to integrate.
Summary of the invention
The purpose of the present invention is to provide a kind of signal reading method of SiPM array, device and SiPM array module, purports
It is solving that a kind of signal reading method of effective SiPM array can not be provided due to the prior art, SiPM array is caused to carry out
It realizes complicated when read-out channel compresses and is difficult to integrated problem.
On the one hand, the present invention provides a kind of signal reading method of SiPM array, the method includes the following steps:
When the SiPM unit on SiPM array collects optical signal, the optical signal is converted by the SiPM unit
For current signal；
By the conducting medium layer being connect with all SiPM units, the current signal is distributed to and is set to described lead
Read-out electrode on dielectric layer；
The current signal is exported by the read-out electrode；
It is exported according to the electric current of each read-out electrode, determines position of the SiPM unit on the SiPM array
Information.
On the other hand, the present invention provides a kind of signal read-out device of SiPM array, described device includes:
Signal acquisition converting unit, for when the SiPM unit on SiPM array collects optical signal, by described
The optical signal is converted to current signal by SiPM unit；
Signal distribution unit believes the electric current for the conducting medium layer by connecting with all SiPM units
Number distribute to the read-out electrode on the conducting medium floor；
Signal output unit, for exporting the current signal by the read-out electrode；And
Position determination unit is used for and is exported according to the electric current of each read-out electrode, determines that the SiPM unit exists
Location information on the SiPM array.
On the other hand, the present invention also provides a kind of SiPM array modules, comprising:
Substrate, the substrate are insulating materials；
On the substrate and the SiPM unit of SiPM array is formed, for acquiring optical signal and by the optical signal
Be converted to current signal；
The conducting medium layer being connect with all SiPM units, the electric current for will be obtained by the SiPM cell translation
Signal distributes to the read-out electrode on the conducting medium layer；And
The read-out electrode, for collecting the current signal being assigned to and output.
SiPM unit in the present invention on SiPM array acquires optical signal, and converts optical signals to current signal, passes through
Current signal is distributed to the read-out electrode on conducting medium layer by the conducting medium layer connecting with all SiPM units, is led to
These read-out electrode output current signals, and the current signal exported according to read-out electrode are crossed, determines SiPM unit at SiPM gusts
Location information on column, to realize the compression of SiPM array read-out channel by conducting medium layer and read-out electrode, and conductive
The components such as discrete resistance capacitance are not used on dielectric layer, the variation of SiPM array size does not need to carry out component again
Design, convenient for the extension of SiPM array and integrated.
Detailed description of the invention
Fig. 1 is a kind of implementation flow chart of the signal reading method for SiPM array that the embodiment of the present invention one provides；
Fig. 2 is that read-out electrode is situated between in conduction in a kind of signal reading method for SiPM array that the embodiment of the present invention one provides
Distribution example figure on matter layer；
Fig. 3 is a kind of structural schematic diagram of the signal read-out device of SiPM array provided by Embodiment 2 of the present invention；And
Fig. 4 is the structural schematic diagram for the SiPM array module that the embodiment of the present invention three provides.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Specific implementation of the invention is described in detail below in conjunction with specific embodiment:
Embodiment one:
Fig. 1 shows a kind of implementation process of the signal reading method of SiPM array of the offer of the embodiment of the present invention one, is
Convenient for explanation, only parts related to embodiments of the present invention are shown, details are as follows:
In step s101, when the SiPM unit on SiPM array collects optical signal, light is believed by SiPM unit
Number be converted to current signal.
The embodiment of the present invention is suitable for SiPM array.SiPM array includes the SiPM unit of N*M, and the numerical value of N and M are by skill
Art personnel determine according to the actual situation, are not defined herein.In practical applications, each SiPM unit in SiPM array
For detecting optical signal and the optical signal detected being converted to current signal, these current signals are read by read-out channel,
And determine position of the SiPM unit for collecting the optical signal in SiPM array.In embodiments of the present invention, SiPM unit will
Optical signal, which is converted to current signal existing way can be used, to be converted, and is not limited thereto.
In step s 102, by the conducting medium layer being connect with all SiPM units, current signal is distributed to and is set to
Read-out electrode on conducting medium layer.
In embodiments of the present invention, optical signal is collected in SiPM unit and convert optical signals to corresponding current signal
Afterwards, current signal is sent to the conducting medium layer connecting with all SiPM units, current signal is enterprising in the conducting medium layer
Row dispersion, is collected the electric current to spread out on conducting medium layer by the read-out electrode being located on conducting medium layer.
Preferably, conducting medium layer is covered on the substrate of SiPM array, so as to what is covered by conducting medium layer
Mode avoids SiPM array size from needing to redesign discrete component when changing, and need to only adjust conductive Jie
The overlay area of matter layer on substrate is suitable for different size of SiPM array.For example, the SiPM array of 4*4 becomes 8*8's
SiPM array, it is only necessary to adjust conducting medium layer size, not be related to the redesign of remaining design parameter, so that SiPM array holds
Easily extension, and it is easy a large amount of processing.
Wherein, conducting medium layer can be also possible to substrate and be located at conducting medium layer between substrate and SiPM unit
It, can be real by perforating on substrate when substrate is between conducting medium layer and SiPM unit between SiPM unit
The now connection of each SiPM unit and conducting medium layer.
Preferably, the current signal that SiPM unit will be converted to passes through the current injection electrode on conducting medium layer, note
Enter conducting medium layer, wherein SiPM unit and current injection electrode correspond, so that SiPM unit is on SiPM array
Position be mapped as position of the current injection electrode on conducting medium layer, by determine current signal on conducting medium layer
Injection phase can determine location information of the SiPM unit on SiPM array.
In step s 103, pass through read-out electrode output current signal.
In embodiments of the present invention, after the read-out electrode on conducting medium layer is collected into current signal, the electricity that will be collected into
Signal output is flowed, so that the processor connecting with SiPM array analyzes current signal, analysis obtains current signal and wrapped
The information that contains and position of the SiPM unit of optical signal on SiPM array currently is collected, thus by spreading on substrate
If conducting medium layer, read-out electrode is set on conducting medium layer, current signal is distributed to each reading on conducting medium layer
Electrode improves the effect of read-out channel compression without individual read-out channel is arranged for each SiPM unit.
Preferably, the edge corner of conducting medium layer is arranged in read-out electrode, such as when conducting medium layer is quadrangle,
Read-out electrode can be respectively set at four angles of quadrangle, collect the electric current toward different directions dispersion so as not to same read-out electrode
Signal.
In step S104, is exported according to the electric current of each read-out electrode, determine position of the SiPM unit on SiPM array
Confidence breath.
In embodiments of the present invention, when each read-out electrode exports the current signal being collected into, each reading electricity is recorded
The size of current of pole output current signal calculates current acquisition according to the size of current of each read-out electrode output current signal
To two-dimensional position of the SiPM unit on SiPM array of optical signal.Known to read-out electrode position and the quantity of read-out electrode
At no less than 3, it can be distributed according to the position of read-out electrode, the size of current of read-out electrode output current signal and charge former
Reason, to determine two-dimensional position of the SiPM unit on SiPM array.
Preferably, as shown in Fig. 2, when read-out electrode be 4 and be located at four corner A, B of conducting medium layer, C,
When D, using one of read-out electrode as coordinate origin, such as using read-out electrode C as coordinate origin, is calculated and infused by following equation
Enter location information of the Current injection points in conducting medium layer of the current signal:
X=(IA+IB)/(IA+IB+Ic+ID), Y=(IA+ID)/(IA+IB+Ic+ID), wherein IA、IB、Ic、IDIt is to read respectively
Electrode A, the size of current of read-out electrode B, read-out electrode C and read-out electrode D output current signal out, (X, Y) are current acquisition
Two-dimensional coordinate of the SiPM unit of optical signal on SiPM array.
Preferably, the quantity of read-out electrode is 4, although 3 read-out electrodes can realize the position on two-dimensional surface
Positioning, but it is higher using the complexity that 3 read-out electrodes are positioned, it is positioned by 4 read-out electrodes, it is fixed to can reduce
The computation complexity of position.
Preferably, conducting medium layer is the conductive material of specific electric resistance, generally can be semiconductor material, such as germanium
Film avoids the too small current signal for leading to not export by read-out electrode of the surface resistivity of conducting medium layer come to SiPM unit
It is positioned, the surface resistivity of conducting medium layer is also avoided to cause very much current signal that can not spread in conducting medium layer greatly.Wherein,
Surface resistivity is determined that the space structure of conducting medium layer is simple by factors such as the materials, film thickness, processing technology of conducting medium layer
It is single, be one layer than relatively thin film, can directly on the substrate of SiPM array overlay film.The preferred scope of conducting medium level resistivity
For 1K Ω/m2~1M Ω/m2。
Preferably, substrate is insulating materials, avoid substrate effect to current signal conducting medium layer diffusion.
In embodiments of the present invention, the current signal that SiPM cell translation obtains is diffused by conducting medium layer,
Read-out electrode by being located at different location on conducting medium layer collects the current signal after diffusion, is exported and is received by read-out electrode
The current signal collected, and the current signal according to read-out electrode output positions SiPM unit, thus effectively right
The output channel of SiPM array is compressed, without components such as discrete resistance capacitances on conducting medium layer, when SiPM array
Without redesigning the component on dielectric layer when size variation, and conducting medium layer is easily worked, and is easy to the expansion of SiPM array
It opens up and integrated.
Embodiment two:
Fig. 3 shows a kind of structure of the signal read-out device of SiPM array provided by Embodiment 2 of the present invention, in order to just
In explanation, only parts related to embodiments of the present invention are shown, including:
Signal acquisition converting unit 31, for passing through SiPM when the SiPM unit on SiPM array collects optical signal
Unit converts optical signals to current signal.
Signal distribution unit 32 distributes current signal for the conducting medium layer by connecting with all SiPM units
To the read-out electrode being set on conducting medium layer.
In embodiments of the present invention, optical signal is collected in SiPM unit and convert optical signals to corresponding current signal
Afterwards, current signal is sent to the conducting medium layer connecting with all SiPM units, current signal is enterprising in the conducting medium layer
Row dispersion, is collected the electric current to spread out on conducting medium layer by the read-out electrode being located on conducting medium layer.
Preferably, conducting medium layer is covered on the substrate of SiPM array, so as to what is covered by conducting medium layer
Mode avoids SiPM array size from needing to redesign discrete component when changing, and need to only adjust conductive Jie
The overlay area of matter layer on substrate is suitable for different size of SiPM array, is not related to setting again for remaining design parameter
Meter so that SiPM array is easy extension, and is easy a large amount of processing.
Wherein, conducting medium layer can be also possible to substrate and be located at conducting medium layer between substrate and SiPM unit
It, can be real by perforating on substrate when substrate is between conducting medium layer and SiPM unit between SiPM unit
The now connection of each SiPM unit and conducting medium layer.
Preferably, the current signal that SiPM unit will be converted to passes through the current injection electrode on conducting medium layer, note
Enter conducting medium layer, wherein SiPM unit and current injection electrode correspond, so that SiPM unit is on SiPM array
Position be mapped as position of the current injection electrode on conducting medium layer, by determine current signal on conducting medium layer
Injection phase can determine location information of the SiPM unit on SiPM array.
Signal output unit 33, for passing through read-out electrode output current signal.
In embodiments of the present invention, after the read-out electrode on conducting medium layer is collected into current signal, the electricity that will be collected into
Signal output is flowed, so that the processor connecting with SiPM array analyzes current signal, analysis obtains current signal and wrapped
The information that contains and position of the SiPM unit of optical signal on SiPM array currently is collected, thus by spreading on substrate
If conducting medium layer, read-out electrode is set on conducting medium layer, current signal is distributed to each reading on conducting medium layer
Electrode improves the effect of read-out channel compression without individual read-out channel is arranged for each SiPM unit.
Preferably, the edge corner of conducting medium layer is arranged in read-out electrode, such as when conducting medium layer is quadrangle,
Read-out electrode can be respectively set at four angles of quadrangle, collect the electric current toward different directions dispersion so as not to same read-out electrode
Signal.
Position determination unit 34 is used for and is exported according to the electric current of each read-out electrode, determines SiPM unit at SiPM gusts
Location information on column.
In embodiments of the present invention, when each read-out electrode exports the current signal being collected into, each reading electricity is recorded
The size of current of pole output current signal calculates current acquisition according to the size of current of each read-out electrode output current signal
To two-dimensional position of the SiPM unit on SiPM array of optical signal.Known to read-out electrode position and the quantity of read-out electrode
At no less than 3, it can be distributed according to the position of read-out electrode, the size of current of read-out electrode output current signal and charge former
Reason, to determine two-dimensional position of the SiPM unit on SiPM array.
Preferably, the quantity of read-out electrode is 4, although 3 read-out electrodes can realize the position on two-dimensional surface
Positioning, but it is higher using the complexity that 3 read-out electrodes are positioned, it is positioned by 4 read-out electrodes, it is fixed to can reduce
The computation complexity of position.
Preferably, conducting medium layer is the conductive material of specific electric resistance, generally can be semiconductor material, such as germanium
Film avoids the too small current signal for leading to not export by read-out electrode of the surface resistivity of conducting medium layer come to SiPM unit
It is positioned, the surface resistivity of conducting medium layer is also avoided to cause very much current signal that can not spread in conducting medium layer greatly.Wherein,
Surface resistivity is determined that the space structure of conducting medium layer is simple by factors such as the materials, film thickness, processing technology of conducting medium layer
It is single, be one layer than relatively thin film, can directly on the substrate of SiPM array overlay film.The preferred scope of conducting medium level resistivity
For 1K Ω/m2~1M Ω/m2。
Preferably, substrate is insulating materials, avoid substrate effect to current signal conducting medium layer diffusion.In this hair
In bright embodiment, the current signal that SiPM cell translation obtains is diffused by conducting medium layer, by being located at conducting medium
Read-out electrode on layer at different location collects the current signal after diffusion, is believed by the electric current that read-out electrode output is collected into
Number, and the current signal according to read-out electrode output positions SiPM unit, thus the effectively output to SiPM array
Channel is compressed, and without components such as discrete resistance capacitances on conducting medium layer, is not necessarily to when the variation of SiPM array size
The component on dielectric layer is redesigned, and conducting medium layer is easily worked, be easy to the extension of SiPM array and integrated.
In embodiments of the present invention, a kind of each unit of the signal read-out device of SiPM array can be by corresponding hardware or soft
Part unit realizes that each unit can be independent soft and hardware unit, also can integrate as a soft and hardware unit, does not have to herein
To limit the present invention.
Embodiment three:
The structure that Fig. 4 shows a kind of SiPM array module of the offer of the embodiment of the present invention three is only shown for ease of description
Go out part related to the embodiment of the present invention, including:
Substrate 41, substrate 41 are insulating materials；
On substrate 41 and formed SiPM array 42 SiPM unit 43, for acquire optical signal and by optical signal turn
It is changed to current signal；
The conducting medium layer 44 being connect with all SiPM units 43, the electric current letter for will be converted to by SiPM unit 43
Number distribute to the read-out electrode 45 on conducting medium floor 44；And
Read-out electrode 45, for collecting the current signal being assigned to and output.
In embodiments of the present invention, the numerical value of the N*M formation SiPM array 42 of SiPM unit 43, N and M are by technical staff's root
It is determined according to actual conditions, herein without limiting.Optical signal is collected in SiPM unit 43 and is converted to the optical signal of acquisition
After current signal, by current signal by being diffused with conducting medium layer 44, by being located at different location on conducting medium layer 44
The read-out electrode 45 at place collects the current signal for being distributed to corresponding position, and exports the electric current being collected by read-out electrode 45 and believe
Number, then the processor by connecting with SiPM array 42 analyzes current signal and determines and currently collect optical signal
Location information of the SiPM unit on SiPM array 42.
Preferably, conducting medium layer 44 is covered on the substrate 41 of SiPM array 42, so as to pass through conducting medium layer
The mode of 44 coverings, avoids 42 size of SiPM array from needing to redesign discrete component when changing, and only needs
It adjusts overlay area of the conducting medium layer 44 on substrate 41 and is suitable for different size of SiPM array 42, be not related to residue and set
The redesign of parameter is counted, so that SiPM array 42 is easy extension, and is easy a large amount of processing.
Wherein, conducting medium layer 44 can between substrate 41 and SiPM unit 43, be also possible to substrate 41 be located at lead
Between dielectric layer 44 and SiPM unit 43, when substrate 41 is between conducting medium layer 44 and SiPM unit 43, it can pass through
In the enterprising eleven punch 11 of substrate 41, the connection of each SiPM unit 43 and conducting medium layer 44 is realized.
Preferably, conducting medium layer 44 is the conductive material of specified resistivity, generally can be semiconductor material, such as germanium
Film avoids the too small current signal for leading to not export by read-out electrode 45 of the surface resistivity of conducting medium layer 44 come to SiPM
Unit 43 is positioned, and the surface resistivity of conducting medium layer 44 is also avoided to cause very much current signal can not be in conducting medium layer 44 greatly
Diffusion.Wherein, surface resistivity is determined by factors such as the materials, film thickness, processing technology of conducting medium layer 44, conducting medium layer
44 space structure is simple, is one layer than relatively thin film, can directly on the substrate 41 of SiPM array 42 overlay film.Conducting medium layer
The preferred scope of 44 surface resistivities is 1K Ω/m2~1M Ω/m2。
Preferably, the output end of SiPM unit 43 is connected with conducting medium layer 44 by corresponding current injection electrode 46
It connects, the current signal that SiPM unit 43 is converted to injects conducting medium layer 44 by current injection electrode 46, wherein SiPM is mono-
Member 43 is corresponded with current injection electrode 46, so that position of the SiPM unit 43 on SiPM array 42 is mapped as electric current
Position of the injecting electrode 46 on conducting medium layer 44, by determining injection phase of the current signal on conducting medium layer 44,
It can determine location information of the SiPM unit 43 on SiPM array 42.
Preferably, read-out electrode 45 is located at the edge of conducting medium layer 44, collects so as not to same read-out electrode 45 toward difference
The current signal of direction dispersion.
In embodiments of the present invention, known to 45 position of read-out electrode and when the quantity of read-out electrode 45 is no less than 3,
Processor can distribute former according to the position of read-out electrode 45, the size of current of 45 output current signal of read-out electrode and charge
Reason, to determine two-dimensional position of the SiPM unit 43 on SiPM array 42.Preferably, the quantity of read-out electrode 45 is 4, although
3 read-out electrodes 45 can realize that the position on two-dimensional surface positions, but the complexity positioned using 3 read-out electrodes 45
Degree is higher, is positioned by 4 read-out electrodes 45, can reduce the computation complexity of positioning.
In embodiments of the present invention, in order to clearly show that the structure of SiPM array module, by SiPM array in Fig. 4
Module is divided into two parts displaying, and a part is the SiPM array 42 that SiPM unit 43 is formed, and another part includes substrate 41, conduction
Dielectric layer 44, read-out electrode 45 and current injection electrode 46, in practical structures, what this two parts was connected together.In addition,
The position of read-out electrode 45 and quantity are not intended as limitation of the embodiment of the present invention to read-out electrode 45 position and quantity in Fig. 4.
In embodiments of the present invention, SiPM array module includes substrate, SiPM unit, the conducting medium for forming SiPM array
The current signal that SiPM cell translation obtains is diffused by layer and read-out electrode, conducting medium layer, by being located at conducting medium layer
Read-out electrode at upper different location collects the current signal after diffusion, exports the current signal being collected by read-out electrode,
To effectively be compressed to the output channel of SiPM array, without first device such as discrete resistance capacitance on conducting medium layer
Part, when the variation of SiPM array size without redesigning the component on dielectric layer, and conducting medium layer is easily worked, and is easy to
The extension of SiPM array and integrated.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of signal reading method of SiPM array, which is characterized in that the method includes the following steps:
When the SiPM unit on SiPM array collects optical signal, the optical signal is converted to by electricity by the SiPM unit
Flow signal；
By the conducting medium layer being connect with all SiPM units, the current signal is distributed to set on conductive Jie
Read-out electrode on matter layer；
The current signal is exported by the read-out electrode；
It is exported according to the electric current of each read-out electrode, determines position letter of the SiPM unit on the SiPM array
Breath.
2. the method as described in claim 1, which is characterized in that the optical signal is converted to electric current by the SiPM unit
After the step of signal, before the step of current signal is distributed to the read-out electrode on the conducting medium layer,
The method also includes:
By the current signal by the current injection electrode on the conducting medium layer, the conducting medium layer is injected, it is described
SiPM unit and the current injection electrode correspond.
3. the method as described in claim 1, which is characterized in that distributing to the current signal set on the conducting medium layer
On read-out electrode the step of, comprising:
The current signal is diffused by the conducting medium layer, by being located at different location on the conducting medium layer
The read-out electrode current signal in diffusion is collected.
4. the method as described in claim 1, which is characterized in that determine position of the SiPM unit on the SiPM array
The step of information, comprising:
According to the size of current of each read-out electrode output current signal, the SiPM unit is calculated in the SiPM array
On two-dimensional position.
5. a kind of signal read-out device of SiPM array, which is characterized in that described device includes:
Signal acquisition converting unit, it is mono- by the SiPM for when the SiPM unit on SiPM array collects optical signal
The optical signal is converted to current signal by member；
Signal distribution unit, for the conducting medium layer by being connect with all SiPM units, by the current signal point
Dispensing is set to the read-out electrode on the conducting medium layer；
Signal output unit, for exporting the current signal by the read-out electrode；And
Position determination unit determines the SiPM unit described for being exported according to the electric current of each read-out electrode
Location information on SiPM array.
6. a kind of SiPM array module, which is characterized in that the SiPM array module includes:
Substrate, the substrate are insulating materials；
On the substrate and formed SiPM array SiPM unit, for acquiring optical signal and converting the optical signal
For current signal；
The conducting medium layer being connect with all SiPM units, the current signal for will be obtained by the SiPM cell translation
Distribute to the read-out electrode being located on the conducting medium layer；And
The read-out electrode, for collecting the current signal being assigned to and output.
7. SiPM array module as claimed in claim 6, which is characterized in that the conducting medium layer is covered on the substrate
On.
8. SiPM array module as claimed in claim 6, which is characterized in that the conducting medium layer is leading for specified resistivity
Electric material.
9. SiPM array module as claimed in claim 6, which is characterized in that the output end of the SiPM unit and the conduction
Dielectric layer is attached by corresponding current injection electrode.
10. SiPM array module as claimed in claim 6, which is characterized in that the read-out electrode is located at the conducting medium
The edge of layer.
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| CN201811537972.9A CN109738792B (en) | 2018-12-16 | 2018-12-16 | SiPM array signal reading method and device and SiPM array module |
| PCT/CN2019/120321 WO2020125321A1 (en) | 2018-12-16 | 2019-11-22 | Sipm array signal reading method, apparatus and sipm array module |
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| CN201811537972.9A CN109738792B (en) | 2018-12-16 | 2018-12-16 | SiPM array signal reading method and device and SiPM array module |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020125321A1 (en) * | 2018-12-16 | 2020-06-25 | 深圳先进技术研究院 | Sipm array signal reading method, apparatus and sipm array module |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030129781A1 (en) * | 2002-01-08 | 2003-07-10 | Yang Seung-Kee | Photodiode detector and fabrication method thereof |
| CN1675780A (en) * | 2002-08-15 | 2005-09-28 | 地太科特技术有限公司 | Packaging structure for imaging detectors |
| CN1703788A (en) * | 2002-10-09 | 2005-11-30 | 法国圣戈班玻璃厂 | Electrically controllable light-emitting device and its electrical connection means |
| US20060006482A1 (en) * | 2002-07-16 | 2006-01-12 | Stmicroelectronics N.V. | Tfa image sensor with stability-optimized photodiode |
| CN1897272A (en) * | 2005-07-15 | 2007-01-17 | 通用电气公司 | Photodetection system and module |
| CN101188245A (en) * | 2006-10-13 | 2008-05-28 | 索尼株式会社 | Solid-state imaging device, imaging apparatus and camera |
| US20090283807A1 (en) * | 2008-05-14 | 2009-11-19 | International Business Machines Corporation | Anti-Reflection Structures For CMOS Image Sensors |
| CN101719971A (en) * | 2009-11-18 | 2010-06-02 | 南京大学 | Signal read-out amplifying method of photosensitive compound medium grid MOSFET detector |
| CN102692743A (en) * | 2011-03-25 | 2012-09-26 | 京东方科技集团股份有限公司 | Electronic equipment, thin-film transistor liquid crystal flat-panel display and manufacturing method thereof |
| CN107393897A (en) * | 2016-05-16 | 2017-11-24 | 通用电气公司 | Re-patterning transmission line on silicon photoelectric multiplier |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009019659A2 (en) * | 2007-08-08 | 2009-02-12 | Koninklijke Philips Electronics N.V. | Silicon photomultiplier readout circuitry |
| US8729654B2 (en) * | 2011-10-21 | 2014-05-20 | The Regents Of The University Of California | Back-side readout semiconductor photomultiplier |
| EP2793273B1 (en) * | 2013-04-17 | 2016-12-28 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Silicon photomultiplier with very low optical cross-talk and improved readout |
| US9754981B2 (en) * | 2015-06-05 | 2017-09-05 | General Electric Company | Solid state photomultiplier having an intermediate region coupled between high and low voltage regions and associated detector |
| JP2018156984A (en) * | 2017-03-15 | 2018-10-04 | 株式会社東芝 | Photo detection element |
| CN107765291A (en) * | 2017-09-11 | 2018-03-06 | 天津大学 | The signal read-out device and method of X-ray detector |
| CN109738792B (en) * | 2018-12-16 | 2020-06-12 | 深圳先进技术研究院 | SiPM array signal reading method and device and SiPM array module |
-
2018
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Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030129781A1 (en) * | 2002-01-08 | 2003-07-10 | Yang Seung-Kee | Photodiode detector and fabrication method thereof |
| US20060006482A1 (en) * | 2002-07-16 | 2006-01-12 | Stmicroelectronics N.V. | Tfa image sensor with stability-optimized photodiode |
| CN1675780A (en) * | 2002-08-15 | 2005-09-28 | 地太科特技术有限公司 | Packaging structure for imaging detectors |
| CN1703788A (en) * | 2002-10-09 | 2005-11-30 | 法国圣戈班玻璃厂 | Electrically controllable light-emitting device and its electrical connection means |
| CN1897272A (en) * | 2005-07-15 | 2007-01-17 | 通用电气公司 | Photodetection system and module |
| CN101188245A (en) * | 2006-10-13 | 2008-05-28 | 索尼株式会社 | Solid-state imaging device, imaging apparatus and camera |
| US20090283807A1 (en) * | 2008-05-14 | 2009-11-19 | International Business Machines Corporation | Anti-Reflection Structures For CMOS Image Sensors |
| CN101719971A (en) * | 2009-11-18 | 2010-06-02 | 南京大学 | Signal read-out amplifying method of photosensitive compound medium grid MOSFET detector |
| CN102692743A (en) * | 2011-03-25 | 2012-09-26 | 京东方科技集团股份有限公司 | Electronic equipment, thin-film transistor liquid crystal flat-panel display and manufacturing method thereof |
| CN107393897A (en) * | 2016-05-16 | 2017-11-24 | 通用电气公司 | Re-patterning transmission line on silicon photoelectric multiplier |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020125321A1 (en) * | 2018-12-16 | 2020-06-25 | 深圳先进技术研究院 | Sipm array signal reading method, apparatus and sipm array module |
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| WO2020125321A1 (en) | 2020-06-25 |
| CN109738792B (en) | 2020-06-12 |
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