WO2020125321A1 - Sipm array signal reading method, apparatus and sipm array module - Google Patents

Sipm array signal reading method, apparatus and sipm array module Download PDF

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Publication number
WO2020125321A1
WO2020125321A1 PCT/CN2019/120321 CN2019120321W WO2020125321A1 WO 2020125321 A1 WO2020125321 A1 WO 2020125321A1 CN 2019120321 W CN2019120321 W CN 2019120321W WO 2020125321 A1 WO2020125321 A1 WO 2020125321A1
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sipm
unit
medium layer
signal
conductive medium
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PCT/CN2019/120321
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French (fr)
Chinese (zh)
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桑子儒
杨永峰
章先鸣
梁栋
刘新
郑海荣
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深圳先进技术研究院
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

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  • the invention belongs to the field of electronic information technology, and particularly relates to a signal readout method and device of a SiPM array and a SiPM array module.
  • SiPM is a silicon photomultiplier, mainly used to detect weak optical signals, convert the detected optical pulses into current pulses, and then receive these current pulses by the readout circuit, and process these current pulses by the corresponding processor to obtain The information contained in the detected optical signal.
  • the SiPM array is a kind of detector for detecting the position information of the weak light signal.
  • multiple SiPM units are used as photosensitive elements, and corresponding readout circuits are provided to obtain information of the detected light.
  • each SiPM unit outputs a signal separately, and requires a readout channel.
  • the number of SiPM units in an array is increasing, and the readout electronics with a large number of channels is difficult to achieve in specific engineering applications.
  • the readout methods of SiPM array mainly include single channel readout, resistance network readout and row and column readout.
  • Separate channel readout is to configure a readout channel for each SiPM unit in the array.
  • the signal is detected on any channel, indicating the position where the SiPM unit detects the optical signal.
  • This method cannot achieve the compression of the readout channel.
  • the number of readout channels Not applicable in the case of an increase.
  • the resistance network readout is to connect the current signals detected by the SiPM units at different positions in the array to the different current outlets of the resistance network, and inversely calculate the signal position information according to the current signal amount at the current outlet. This method can be implemented The channel is compressed but different resistance elements need to be selected according to the actual array size, which is complicated and difficult to integrate.
  • the row and column readout method is to use a resistor or a capacitor to shunt current or voltage in the row direction or column direction, respectively, and channel compression can be performed, but this method relies on resistance or capacitance components to achieve, after the number of rows or columns is changed
  • the hardware needs to be redesigned and difficult to integrate.
  • the object of the present invention is to provide a signal readout method, device and SiPM array module of a SiPM array, aiming to solve the problem that the SiPM array is being read out because the prior art cannot provide an effective signal readout method of the SiPM array Channel compression is complicated and difficult to integrate.
  • the present invention provides a signal readout method for a SiPM array.
  • the method includes the following steps:
  • the SiPM unit on the SiPM array collects the optical signal
  • the optical signal is converted into a current signal by the SiPM unit
  • the position information of the SiPM cell on the SiPM array is determined.
  • the present invention provides a signal readout device for a SiPM array.
  • the device includes:
  • the signal acquisition and conversion unit is used to convert the optical signal into a current signal through the SiPM unit when the SiPM unit on the SiPM array collects the optical signal;
  • a signal distribution unit for distributing the current signal to the readout electrode provided on the conductive medium layer through the conductive medium layer connected to all the SiPM units;
  • a signal output unit for outputting the current signal through the readout electrode
  • the position determination unit is used to determine the position information of the SiPM unit on the SiPM array according to the current output of each readout electrode.
  • the present invention also provides a SiPM array module, including:
  • the substrate is an insulating material
  • a SiPM unit located on the substrate and forming a SiPM array, used for collecting optical signals and converting the optical signals into current signals;
  • a conductive medium layer connected to all of the SiPM units, for distributing the current signal converted by the SiPM unit to the readout electrode located on the conductive medium layer;
  • the readout electrode is used to collect and output the distributed current signal.
  • the SiPM unit on the SiPM array collects the optical signal and converts the optical signal into a current signal, and distributes the current signal to the readout electrode on the conductive medium layer through the conductive medium layer connected to all SiPM units.
  • the reading electrode outputs a current signal, and according to the current signal output from the reading electrode, determines the position information of the SiPM unit on the SiPM array, thereby compressing the read channel of the SiPM array through the conductive dielectric layer and the reading electrode, and the conductive dielectric layer
  • Discrete resistors, capacitors and other components are not used, and changes in the size of the SiPM array do not require redesign of the components, which facilitates the expansion and integration of the SiPM array.
  • FIG. 1 is an implementation flowchart of a signal readout method of a SiPM array provided in Embodiment 1 of the present invention
  • FIG. 2 is an exemplary diagram of the distribution of readout electrodes on a conductive dielectric layer in a signal readout method of a SiPM array provided in Embodiment 1 of the present invention
  • FIG. 3 is a schematic structural diagram of a signal readout device for a SiPM array provided by Embodiment 2 of the present invention.
  • FIG. 4 is a schematic structural diagram of a SiPM array module provided in Embodiment 3 of the present invention.
  • FIG. 1 shows an implementation flow of a signal readout method of a SiPM array provided in Embodiment 1 of the present invention. For ease of explanation, only the parts related to the embodiment of the present invention are shown. The details are as follows:
  • step S101 when the SiPM unit on the SiPM array collects an optical signal, the SiPM unit converts the optical signal into a current signal.
  • the embodiments of the present invention are applicable to SiPM arrays.
  • the SiPM array includes N*M SiPM cells. The values of N and M are determined by technicians according to actual conditions, and are not limited herein.
  • each SiPM unit in the SiPM array is used to detect the optical signal and convert the detected optical signal into a current signal. These current signals are read out by the readout channel, and the SiPM that collects the optical signal is determined The location of the cell in the SiPM array.
  • the SiPM unit can convert the optical signal into the current signal in an existing manner, which is not limited herein.
  • step S102 the current signal is distributed to the readout electrodes provided on the conductive dielectric layer through the conductive dielectric layer connected to all SiPM cells.
  • the SiPM unit collects the optical signal and converts the optical signal into a corresponding current signal
  • the current signal is sent to the conductive medium layer connected to all SiPM units, and the current signal is performed on the conductive medium layer Dispersed, the current dispersed on the conductive medium layer is collected by the readout electrode located on the conductive medium layer.
  • the conductive dielectric layer covers the substrate of the SiPM array, so that the conductive dielectric layer can be covered to avoid the need to redesign discrete components when the size of the SiPM array changes, and only need to adjust the conductive dielectric layer in the lining
  • the coverage area on the bottom can be adapted to SiPM arrays of different sizes.
  • the 4*4 SiPM array becomes an 8*8 SiPM array, only the size of the conductive dielectric layer needs to be adjusted, and no redesign of the remaining design parameters is involved, making the SiPM array easy to expand and easy to process in large quantities.
  • the conductive dielectric layer may be located between the substrate and the SiPM unit, or the substrate may be located between the conductive dielectric layer and the SiPM unit. When the substrate is located between the conductive dielectric layer and the SiPM unit, it may pass through the substrate Perforation is performed to realize the connection between each SiPM unit and the conductive dielectric layer.
  • the SiPM unit injects the converted current signal into the conductive dielectric layer through the current injection electrode on the conductive dielectric layer, wherein the SiPM unit corresponds to the current injection electrode one-to-one, so that the position of the SiPM unit on the SiPM array is mapped
  • the position information of the SiPM cell on the SiPM array can be determined by determining the injection location of the current signal on the conductive dielectric layer.
  • step S103 a current signal is output through the readout electrode.
  • the readout electrode on the conductive medium layer collects the current signal, and then outputs the collected current signal, so that the processor connected to the SiPM array can analyze the current signal to obtain the current signal.
  • Information, and the position of the SiPM unit on the SiPM array where the optical signal is currently collected so that by laying a conductive medium layer on the substrate, a readout electrode is provided on the conductive medium layer, and the current signal is dispersed on the conductive medium layer to each reading
  • the output electrode does not need to set a separate readout channel for each SiPM unit, which improves the compression effect of the readout channel.
  • the readout electrodes are provided at the corners of the edges of the conductive medium layer.
  • the readout electrodes can be provided at the four corners of the quadrilateral, so that different readout electrodes collect currents scattered in different directions signal.
  • step S104 according to the current output of each readout electrode, the position information of the SiPM cell on the SiPM array is determined.
  • the current magnitude of each readout electrode output current signal is recorded, and the current acquisition is calculated according to the current magnitude of each readout electrode output current signal
  • the SiPM cell can be determined in the SiPM array according to the position of the readout electrode, the current size of the output current signal of the readout electrode and the principle of charge distribution The two-dimensional location on the.
  • one of the readout electrodes is used as the coordinate origin, for example, readout
  • the electrode C is the origin of the coordinates, and the position information of the current injection point injected into the current signal in the conductive dielectric layer is calculated by the following formula:
  • the number of readout electrodes is 4, although 3 readout electrodes can achieve position positioning on a two-dimensional plane, but the complexity of positioning using 3 readout electrodes is relatively high, through 4 readout electrodes Positioning can reduce the computational complexity of positioning.
  • the conductive dielectric layer is a conductive material with a specific resistivity, which may generally be a semiconductor material, such as a germanium film, to avoid that the surface resistivity of the conductive dielectric layer is too small and the SiPM unit cannot be positioned by reading the current signal output from the electrode It also avoids that the surface resistivity of the conductive medium layer is too large and the current signal cannot be diffused in the conductive medium layer.
  • the surface resistivity is determined by factors such as the material of the conductive dielectric layer, the thickness of the film, and the processing technology.
  • the spatial structure of the conductive dielectric layer is simple. It is a thin film that can be directly coated on the substrate of the SiPM array.
  • the preferred range of the resistivity of the conductive medium layer is 1K ⁇ /m 2 to 1M ⁇ /m 2 .
  • the substrate is an insulating material to prevent the substrate from affecting the diffusion of the current signal in the conductive medium layer.
  • the current signal converted by the SiPM cell is diffused through the conductive dielectric layer, the diffused current signal is collected by the readout electrodes located at different positions on the conductive dielectric layer, and the collected current signal is output through the readout electrode Current signal, and locate the SiPM unit according to the current signal output by the readout electrode, so as to effectively compress the output channel of the SiPM array.
  • the SiPM array There are no discrete resistors and capacitors on the conductive dielectric layer.
  • FIG. 3 shows a structure of a signal readout device of a SiPM array provided by Embodiment 2 of the present invention. For ease of description, only parts related to the embodiment of the present invention are shown, including:
  • the signal acquisition and conversion unit 31 is used to convert the optical signal into a current signal through the SiPM unit when the SiPM unit on the SiPM array collects the optical signal.
  • the signal distribution unit 32 is used to distribute current signals to the readout electrodes provided on the conductive dielectric layer through the conductive dielectric layer connected to all SiPM units.
  • the SiPM unit collects the optical signal and converts the optical signal into a corresponding current signal
  • the current signal is sent to the conductive medium layer connected to all SiPM units, and the current signal is performed on the conductive medium layer Dispersed, the current dispersed on the conductive medium layer is collected by the readout electrode located on the conductive medium layer.
  • the conductive dielectric layer covers the substrate of the SiPM array, so that the conductive dielectric layer can be covered to avoid the need to redesign discrete components when the size of the SiPM array changes, and only need to adjust the conductive dielectric layer in the lining
  • the coverage area on the bottom can be adapted to SiPM arrays of different sizes without involving the redesign of the remaining design parameters, making the SiPM array easy to expand and easy to process in large quantities.
  • the conductive dielectric layer may be located between the substrate and the SiPM unit, or the substrate may be located between the conductive dielectric layer and the SiPM unit. When the substrate is located between the conductive dielectric layer and the SiPM unit, it may pass through the substrate Perforation is performed to realize the connection between each SiPM unit and the conductive dielectric layer.
  • the SiPM cell injects the converted current signal into the conductive dielectric layer through the current injection electrode on the conductive dielectric layer, wherein the SiPM cell corresponds to the current injection electrode one-to-one, so that the position of the SiPM cell on the SiPM array is mapped
  • the position information of the SiPM cell on the SiPM array can be determined by determining the injection location of the current signal on the conductive dielectric layer.
  • the signal output unit 33 is used to output a current signal through the readout electrode.
  • the readout electrode on the conductive medium layer collects the current signal, and then outputs the collected current signal, so that the processor connected to the SiPM array can analyze the current signal to obtain the current signal.
  • Information, and the position of the SiPM unit on the SiPM array where the optical signal is currently collected so that by laying a conductive medium layer on the substrate, a readout electrode is provided on the conductive medium layer, and the current signal is dispersed on the conductive medium layer to each reading
  • the output electrode does not need to set a separate readout channel for each SiPM unit, which improves the compression effect of the readout channel.
  • the readout electrodes are provided at the corners of the edges of the conductive medium layer.
  • the readout electrodes can be provided at the four corners of the quadrilateral, so that different readout electrodes collect currents scattered in different directions signal.
  • the position determining unit 34 is used to determine the position information of the SiPM unit on the SiPM array according to the current output of each readout electrode.
  • the current magnitude of each readout electrode output current signal is recorded, and the current acquisition is calculated according to the current magnitude of each readout electrode output current signal
  • the SiPM cell can be determined in the SiPM array according to the position of the readout electrode, the current size of the output current signal of the readout electrode and the principle of charge distribution The two-dimensional location on the.
  • the number of readout electrodes is 4, although 3 readout electrodes can achieve position positioning on a two-dimensional plane, the complexity of positioning using 3 readout electrodes is relatively high, through 4 readout electrodes Positioning can reduce the computational complexity of positioning.
  • the conductive dielectric layer is a conductive material with a specific resistivity, which may generally be a semiconductor material, such as a germanium film, to avoid that the surface resistivity of the conductive dielectric layer is too small and the SiPM unit cannot be positioned by reading the current signal output from the electrode It also avoids that the surface resistivity of the conductive medium layer is too large and the current signal cannot be diffused in the conductive medium layer.
  • the surface resistivity is determined by factors such as the material of the conductive dielectric layer, the thickness of the film, and the processing technology.
  • the spatial structure of the conductive dielectric layer is simple. It is a thin film that can be directly coated on the substrate of the SiPM array.
  • the preferred range of the resistivity of the conductive medium layer is 1K ⁇ /m 2 to 1M ⁇ /m 2 .
  • the substrate is an insulating material to prevent the substrate from affecting the diffusion of the current signal in the conductive medium layer.
  • the current signal converted by the SiPM cell is diffused through the conductive dielectric layer, the diffused current signal is collected by the readout electrodes located at different positions on the conductive dielectric layer, and the collected current signal is output through the readout electrode Current signal, and locate the SiPM unit according to the current signal output by the readout electrode, so as to effectively compress the output channel of the SiPM array.
  • each unit of a signal readout device of a SiPM array may be implemented by a corresponding hardware or software unit, and each unit may be an independent software and hardware unit, or may be integrated into one software and hardware unit. This is not to limit the invention.
  • FIG. 4 shows a structure of a SiPM array module provided in Embodiment 3 of the present invention. For ease of description, only parts related to the embodiment of the present invention are shown, including:
  • Substrate 41 which is an insulating material
  • the SiPM unit 43 on the substrate 41 and forming the SiPM array 42 is used to collect optical signals and convert the optical signals into current signals;
  • the conductive dielectric layer 44 connected to all SiPM units 43 is used to distribute the current signal converted by the SiPM unit 43 to the readout electrode 45 located on the conductive dielectric layer 44;
  • the readout electrode 45 is used to collect and output the distributed current signal.
  • N*M SiPM units 43 form a SiPM array 42.
  • the values of N and M are determined by the technician according to actual conditions, and are not limited herein.
  • the SiPM unit 43 collects the optical signal and converts the collected optical signal into a current signal
  • the current signal is diffused through the conductive medium layer 44 and collected and dispersed by the readout electrodes 45 located at different positions on the conductive medium layer 44
  • the current signal at the corresponding position, and the collected current signal is output by the readout electrode 45, and then the processor connected to the SiPM array 42 analyzes the current signal and determines that the SiPM unit currently collecting the optical signal is in the SiPM array 42 Location information.
  • the conductive dielectric layer 44 covers the substrate 41 of the SiPM array 42, so that it can be covered by the conductive dielectric layer 44 to avoid the need to redesign discrete components when the size of the SiPM array 42 changes, and only needs to be adjusted
  • the coverage area of the conductive dielectric layer 44 on the substrate 41 can be adapted to SiPM arrays 42 of different sizes, and does not involve the redesign of the remaining design parameters, making the SiPM array 42 easy to expand and easy to process in large quantities.
  • the conductive dielectric layer 44 may be located between the substrate 41 and the SiPM unit 43, or the substrate 41 may be located between the conductive dielectric layer 44 and the SiPM unit 43, when the substrate 41 is located between the conductive dielectric layer 44 and the SiPM unit 43 From time to time, each SiPM cell 43 can be connected to the conductive dielectric layer 44 by perforating the substrate 41.
  • the conductive dielectric layer 44 is a conductive material with a specified resistivity, which may generally be a semiconductor material, such as a germanium film, to avoid that the surface resistivity of the conductive dielectric layer 44 is too small to cause the current signal output from the readout electrode 45 to affect the SiPM
  • the positioning of the unit 43 also prevents the surface resistivity of the conductive medium layer 44 from being too large, so that the current signal cannot diffuse in the conductive medium layer 44.
  • the surface resistivity is determined by factors such as the material of the conductive dielectric layer 44, the thickness of the film, and the processing technology.
  • the spatial structure of the conductive dielectric layer 44 is simple, and it is a thin film that can be directly on the substrate 41 of the SiPM array 42. Laminating.
  • the preferred range of the surface resistivity of the conductive medium layer 44 is 1K ⁇ /m 2 to 1M ⁇ /m 2 .
  • the output end of the SiPM unit 43 is connected to the conductive dielectric layer 44 through a corresponding current injection electrode 46, and the current signal converted by the SiPM unit 43 is injected into the conductive dielectric layer 44 through the current injection electrode 46, wherein the SiPM unit 43 and the current
  • the injection electrodes 46 correspond one-to-one, so that the position of the SiPM unit 43 on the SiPM array 42 is mapped to the position of the current injection electrode 46 on the conductive dielectric layer 44.
  • the readout electrode 45 is located at the edge of the conductive medium layer 44 so that different readout electrodes 45 collect current signals dispersed in different directions.
  • the processor may output the current of the current signal according to the position of the readout electrode 45 and the readout electrode 45
  • the size and the principle of charge distribution determine the two-dimensional position of the SiPM unit 43 on the SiPM array 42.
  • the number of readout electrodes 45 is 4.
  • three readout electrodes 45 can achieve position positioning on a two-dimensional plane, the complexity of positioning using three readout electrodes 45 is relatively high. The positioning of the readout electrode 45 can reduce the computational complexity of positioning.
  • the SiPM array module is divided into two parts in FIG. 4, one part is the SiPM array 42 formed by the SiPM unit 43, and the other part includes the substrate 41 and the conductive medium
  • the layer 44, the readout electrode 45 and the current injection electrode 46 are connected together.
  • the position and number of the readout electrodes 45 in FIG. 4 are not intended to limit the position and number of the readout electrodes 45 in the embodiment of the present invention.
  • the SiPM array module includes a substrate, a SiPM cell forming a SiPM array, a conductive dielectric layer, and a readout electrode.
  • the conductive dielectric layer diffuses the current signal converted by the SiPM cell, which is different from the conductive dielectric layer.
  • the readout electrode at the location collects the diffused current signal and outputs the collected current signal through the readout electrode, thereby effectively compressing the output channel of the SiPM array, and there are no discrete resistors and capacitors on the conductive medium layer.

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Abstract

A SiPM array signal reading method, an apparatus and a SiPM array module, the method comprising: when a SiPM unit on a SiPM array collects an optical signal, converting the optical signal into a current signal by means of the SiPM unit (S101); by means of an electrically conductive medium layer connected to the SiPM unit, distributing the current signal to read electrodes disposed on the electrically conductive medium layer (S102); outputting the current signal by means of the read electrodes (S103); according to a current output of each read electrode, determining position information of the SiPM unit on the SiPM array (S104). Thus, by means of an electrically conductive medium layer and read electrodes on a SiPM array substrate, as well as not using discrete elements such as resistors and capacitors on the electrically conductive medium layer, redesign of elements is not necessary when changing the size of a SiPM array, effectively improving SiPM array read channel compression results, and facilitating expansion and integration of SiPM arrays.

Description

SiPM阵列的信号读出方法、装置及SiPM阵列模块Signal reading method and device of SiPM array and SiPM array module 技术领域Technical field
本发明属于电子信息技术领域，尤其涉及一种SiPM阵列的信号读出方法、装置及SiPM阵列模块。The invention belongs to the field of electronic information technology, and particularly relates to a signal readout method and device of a SiPM array and a SiPM array module.
背景技术Background technique
SiPM是硅光电倍增器，主要用于探测微弱的光信号，将探测到的光脉冲转换为电流脉冲，然后由读出电路接收这些电流脉冲，由相应的处理器对这些电流脉冲进行处理，得到被探测的光信号所包含的信息。SiPM is a silicon photomultiplier, mainly used to detect weak optical signals, convert the detected optical pulses into current pulses, and then receive these current pulses by the readout circuit, and process these current pulses by the corresponding processor to obtain The information contained in the detected optical signal.
SiPM阵列是探测微弱光信号位置信息的一种探测器，在二维平面上将多个SiPM单元作为感光元件，配以相应的读出电路以得到被探测光的信息。一般地，每个SiPM单元单独输出一路信号，需要一路读出通道。然而，随着探测面积的增大和每个探测单元的缩小，一个阵列中SiPM单元数量越来越多，通道数量庞大的读出电子学在具体工程应用中难以实现。The SiPM array is a kind of detector for detecting the position information of the weak light signal. On a two-dimensional plane, multiple SiPM units are used as photosensitive elements, and corresponding readout circuits are provided to obtain information of the detected light. Generally, each SiPM unit outputs a signal separately, and requires a readout channel. However, with the increase of the detection area and the reduction of each detection unit, the number of SiPM units in an array is increasing, and the readout electronics with a large number of channels is difficult to achieve in specific engineering applications.
目前，SiPM阵列的读出方法主要有单独通道读出、电阻网络读出和行列读出。单独通道读出即为阵列中的每个SiPM单元配置一路读出通道，哪一路有信号就说明哪个位置的SiPM单元探测到光信号，该方法无法实现读出通道的压缩，在读出通道数目增多的情形下不适用。电阻网络读出是将阵列中不同位置的SiPM单元所探测到的电流信号接入到电阻网络的不同电流出口，依据电流出口上电流信号量进行反演推算得到信号的位置信息，该方法可以实现通道压缩但需要依据实际阵列大小选择不同的电阻元件，实现复杂且难以集成。行列读出法是分别在行方向或列方向上，分别使用电阻或电容进行电流分流或者电压分压，可以进行通道压缩，但该方法依赖电阻或电容元器件实现，行数或列数改变后需要重新设计硬件，且难以集成。At present, the readout methods of SiPM array mainly include single channel readout, resistance network readout and row and column readout. Separate channel readout is to configure a readout channel for each SiPM unit in the array. The signal is detected on any channel, indicating the position where the SiPM unit detects the optical signal. This method cannot achieve the compression of the readout channel. The number of readout channels Not applicable in the case of an increase. The resistance network readout is to connect the current signals detected by the SiPM units at different positions in the array to the different current outlets of the resistance network, and inversely calculate the signal position information according to the current signal amount at the current outlet. This method can be implemented The channel is compressed but different resistance elements need to be selected according to the actual array size, which is complicated and difficult to integrate. The row and column readout method is to use a resistor or a capacitor to shunt current or voltage in the row direction or column direction, respectively, and channel compression can be performed, but this method relies on resistance or capacitance components to achieve, after the number of rows or columns is changed The hardware needs to be redesigned and difficult to integrate.
发明内容Summary of the invention
本发明的目的在于提供一种SiPM阵列的信号读出方法、装置及SiPM阵列模块，旨在解决由于现有技术无法提供一种有效的SiPM阵列的信号读出方法，导致SiPM阵列在进行读出通道压缩时实现复杂且难以集成的问题。The object of the present invention is to provide a signal readout method, device and SiPM array module of a SiPM array, aiming to solve the problem that the SiPM array is being read out because the prior art cannot provide an effective signal readout method of the SiPM array Channel compression is complicated and difficult to integrate.
一方面，本发明提供了一种SiPM阵列的信号读出方法，所述方法包括下述步骤：In one aspect, the present invention provides a signal readout method for a SiPM array. The method includes the following steps:
当SiPM阵列上的SiPM单元采集到光信号时，通过所述SiPM单元将所述光信号转换为电流信号；When the SiPM unit on the SiPM array collects the optical signal, the optical signal is converted into a current signal by the SiPM unit;
通过与所有所述SiPM单元连接的导电介质层，将所述电流信号分配给设于所述导电介质层上的读出电极；Distribute the current signal to the readout electrodes provided on the conductive medium layer through the conductive medium layer connected to all the SiPM units;
通过所述读出电极输出所述电流信号；Output the current signal through the readout electrode;
根据每个所述读出电极的电流输出，确定所述SiPM单元在所述SiPM阵列上的位置信息。According to the current output of each readout electrode, the position information of the SiPM cell on the SiPM array is determined.
另一方面，本发明提供了一种SiPM阵列的信号读出装置，所述装置包括：On the other hand, the present invention provides a signal readout device for a SiPM array. The device includes:
信号采集转换单元，用于当SiPM阵列上的SiPM单元采集到光信号时，通过所述SiPM单元将所述光信号转换为电流信号；The signal acquisition and conversion unit is used to convert the optical signal into a current signal through the SiPM unit when the SiPM unit on the SiPM array collects the optical signal;
信号分配单元，用于通过与所有所述SiPM单元连接的导电介质层，将所述电流信号分配给设于所述导电介质层上的读出电极；A signal distribution unit for distributing the current signal to the readout electrode provided on the conductive medium layer through the conductive medium layer connected to all the SiPM units;
信号输出单元，用于通过所述读出电极输出所述电流信号；以及A signal output unit for outputting the current signal through the readout electrode; and
位置确定单元，用于并根据每个所述读出电极的电流输出，确定所述SiPM单元在所述SiPM阵列上的位置信息。The position determination unit is used to determine the position information of the SiPM unit on the SiPM array according to the current output of each readout electrode.
另一方面，本发明还提供了一种SiPM阵列模块，包括：On the other hand, the present invention also provides a SiPM array module, including:
衬底，所述衬底为绝缘材料；Substrate, the substrate is an insulating material;
位于所述衬底上、且形成SiPM阵列的SiPM单元，用于采集光信号并将所述光信号转换为电流信号；A SiPM unit located on the substrate and forming a SiPM array, used for collecting optical signals and converting the optical signals into current signals;
与所有所述SiPM单元连接的导电介质层，用于将由所述SiPM单元转换得到的电流信号分配给位于所述导电介质层上的读出电极；以及A conductive medium layer connected to all of the SiPM units, for distributing the current signal converted by the SiPM unit to the readout electrode located on the conductive medium layer; and
所述读出电极，用于收集分配到的电流信号并输出。The readout electrode is used to collect and output the distributed current signal.
本发明中SiPM阵列上的SiPM单元采集光信号，并将光信号转换为电流信号，通过与所有SiPM单元连接的导电介质层，将电流信号分配给位于导电介质层上的读出电极，通过这些读出电极输出电流信号，并根据读出电极输出的电流信号，确定SiPM单元在SiPM阵列上的位置信息，从而通过导电介质层和读出电极实现SiPM阵列读出通道的压缩，且导电介质层上不采用分立的电阻电容等元器件，SiPM阵列大小的变化不需要进行元器件的重新设计，便于SiPM阵列的扩展和集成。In the present invention, the SiPM unit on the SiPM array collects the optical signal and converts the optical signal into a current signal, and distributes the current signal to the readout electrode on the conductive medium layer through the conductive medium layer connected to all SiPM units. The reading electrode outputs a current signal, and according to the current signal output from the reading electrode, determines the position information of the SiPM unit on the SiPM array, thereby compressing the read channel of the SiPM array through the conductive dielectric layer and the reading electrode, and the conductive dielectric layer Discrete resistors, capacitors and other components are not used, and changes in the size of the SiPM array do not require redesign of the components, which facilitates the expansion and integration of the SiPM array.
附图说明BRIEF DESCRIPTION
图1是本发明实施例一提供的一种SiPM阵列的信号读出方法的实现流程图；FIG. 1 is an implementation flowchart of a signal readout method of a SiPM array provided in Embodiment 1 of the present invention;
图2是本发明实施例一提供的一种SiPM阵列的信号读出方法中读出电极在导电介质层上的分布示例图；2 is an exemplary diagram of the distribution of readout electrodes on a conductive dielectric layer in a signal readout method of a SiPM array provided in Embodiment 1 of the present invention;
图3是本发明实施例二提供的一种SiPM阵列的信号读出装置的结构示意图；以及3 is a schematic structural diagram of a signal readout device for a SiPM array provided by Embodiment 2 of the present invention; and
图4是本发明实施例三提供的SiPM阵列模块的结构示意图。4 is a schematic structural diagram of a SiPM array module provided in Embodiment 3 of the present invention.
具体实施方式detailed description
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, and are not intended to limit the present invention.
以下结合具体实施例对本发明的具体实现进行详细描述：The following describes the specific implementation of the present invention in detail with reference to specific embodiments:
实施例一：Example one:
图1示出了本发明实施例一提供的一种SiPM阵列的信号读出方法的实现流程，为了便于说明，仅示出了与本发明实施例相关的部分，详述如下：FIG. 1 shows an implementation flow of a signal readout method of a SiPM array provided in Embodiment 1 of the present invention. For ease of explanation, only the parts related to the embodiment of the present invention are shown. The details are as follows:
在步骤S101中，当SiPM阵列上的SiPM单元采集到光信号时，通过SiPM单元将光信号转换为电流信号。In step S101, when the SiPM unit on the SiPM array collects an optical signal, the SiPM unit converts the optical signal into a current signal.
本发明实施例适用于SiPM阵列。SiPM阵列包括N*M个的SiPM单元，N和M的数值由技术人员根据实际情况决定，在此并不进行限定。在实际应用中，SiPM阵列中每个SiPM单元都用于探测光信号并将探测到的光信号转换为电流信号，由读出通道将这些电流信号读出，并确定采集到该光信号的SiPM单元在SiPM阵列中的位置。在本发明实施例中，SiPM单元将光信号转换为电流信号可采用现有方式进行转换，在此不作限定。The embodiments of the present invention are applicable to SiPM arrays. The SiPM array includes N*M SiPM cells. The values of N and M are determined by technicians according to actual conditions, and are not limited herein. In practical applications, each SiPM unit in the SiPM array is used to detect the optical signal and convert the detected optical signal into a current signal. These current signals are read out by the readout channel, and the SiPM that collects the optical signal is determined The location of the cell in the SiPM array. In the embodiment of the present invention, the SiPM unit can convert the optical signal into the current signal in an existing manner, which is not limited herein.
在步骤S102中，通过与所有SiPM单元连接的导电介质层，将电流信号分配给设于导电介质层上的读出电极。In step S102, the current signal is distributed to the readout electrodes provided on the conductive dielectric layer through the conductive dielectric layer connected to all SiPM cells.
在本发明实施例中，在SiPM单元采集到光信号并将光信号转换为相应的电流信号后，将电流信号发送给与所有SiPM单元连接的导电介质层，电流信号在该导电介质层上进行分散，由位于导电介质层上的读出电极对导电介质层上分散开来的电流进行收集。In the embodiment of the present invention, after the SiPM unit collects the optical signal and converts the optical signal into a corresponding current signal, the current signal is sent to the conductive medium layer connected to all SiPM units, and the current signal is performed on the conductive medium layer Dispersed, the current dispersed on the conductive medium layer is collected by the readout electrode located on the conductive medium layer.
优选地，导电介质层覆盖在SiPM阵列的衬底上，从而可以通过导电介质层覆盖的方式，避免SiPM阵列大小发生变化时需要对分立的元器件进行重新设计，只需调整导电介质层在衬底上的覆盖区域即可适应不同大小的SiPM阵列。例如，4*4的SiPM阵列变为8*8的SiPM阵列，只需要调整导电介质层大小，不涉及剩余设计参数的重新设计，使得SiPM阵列容易扩展，且容易大量加工。Preferably, the conductive dielectric layer covers the substrate of the SiPM array, so that the conductive dielectric layer can be covered to avoid the need to redesign discrete components when the size of the SiPM array changes, and only need to adjust the conductive dielectric layer in the lining The coverage area on the bottom can be adapted to SiPM arrays of different sizes. For example, the 4*4 SiPM array becomes an 8*8 SiPM array, only the size of the conductive dielectric layer needs to be adjusted, and no redesign of the remaining design parameters is involved, making the SiPM array easy to expand and easy to process in large quantities.
其中，导电介质层可以位于衬底与SiPM单元之间，也可以是衬底位于导电介质层和SiPM单元之间，当衬底位于导电介质层和SiPM单元之间时，可通过在衬底上进行穿孔，实现每个SiPM单元与导电介质层的连接。The conductive dielectric layer may be located between the substrate and the SiPM unit, or the substrate may be located between the conductive dielectric layer and the SiPM unit. When the substrate is located between the conductive dielectric layer and the SiPM unit, it may pass through the substrate Perforation is performed to realize the connection between each SiPM unit and the conductive dielectric layer.
优选地，SiPM单元将转换得到的电流信号，通过导电介质层上的电流注入 电极，注入导电介质层，其中，SiPM单元与电流注入电极一一对应，从而使得SiPM单元在SiPM阵列上的位置映射为电流注入电极在导电介质层上的位置，通过确定电流信号在导电介质层上的注入位置，能够确定SiPM单元在SiPM阵列上的位置信息。Preferably, the SiPM unit injects the converted current signal into the conductive dielectric layer through the current injection electrode on the conductive dielectric layer, wherein the SiPM unit corresponds to the current injection electrode one-to-one, so that the position of the SiPM unit on the SiPM array is mapped For the position of the current injection electrode on the conductive dielectric layer, the position information of the SiPM cell on the SiPM array can be determined by determining the injection location of the current signal on the conductive dielectric layer.
在步骤S103中，通过读出电极输出电流信号。In step S103, a current signal is output through the readout electrode.
在本发明实施例中，导电介质层上的读出电极收集到电流信号后，将收集到的电流信号输出，以便与SiPM阵列连接的处理器对电流信号进行分析，分析得到电流信号所包含的信息、以及当前采集到光信号的SiPM单元在SiPM阵列上的位置，从而通过在衬底上铺设导电介质层，在导电介质层上设置读出电极，电流信号在导电介质层上分散到各个读出电极，而无需为每个SiPM单元设置单独的读出通道，提高了读出通道压缩的效果。In the embodiment of the present invention, the readout electrode on the conductive medium layer collects the current signal, and then outputs the collected current signal, so that the processor connected to the SiPM array can analyze the current signal to obtain the current signal. Information, and the position of the SiPM unit on the SiPM array where the optical signal is currently collected, so that by laying a conductive medium layer on the substrate, a readout electrode is provided on the conductive medium layer, and the current signal is dispersed on the conductive medium layer to each reading The output electrode does not need to set a separate readout channel for each SiPM unit, which improves the compression effect of the readout channel.
优选地，读出电极设置在导电介质层的边缘角落，例如当导电介质层为四边形时，可在四边形的四个角处分别设置读出电极，以便不同读出电极收集往不同方向分散的电流信号。Preferably, the readout electrodes are provided at the corners of the edges of the conductive medium layer. For example, when the conductive medium layer is a quadrilateral, the readout electrodes can be provided at the four corners of the quadrilateral, so that different readout electrodes collect currents scattered in different directions signal.
在步骤S104中，根据每个读出电极的电流输出，确定SiPM单元在SiPM阵列上的位置信息。In step S104, according to the current output of each readout electrode, the position information of the SiPM cell on the SiPM array is determined.
在本发明实施例中，在每个读出电极输出收集到的电流信号时，记录每个读出电极输出电流信号的电流大小，根据每个读出电极输出电流信号的电流大小，计算当前采集到光信号的SiPM单元在SiPM阵列上的二维位置。在读出电极位置已知、且读出电极的数量不少于3个时，可以根据读出电极的位置、读出电极输出电流信号的电流大小和电荷分配原理，来确定SiPM单元在SiPM阵列上的二维位置。In the embodiment of the present invention, when each readout electrode outputs the collected current signal, the current magnitude of each readout electrode output current signal is recorded, and the current acquisition is calculated according to the current magnitude of each readout electrode output current signal The two-dimensional position of the SiPM cell on the SiPM array to the optical signal. When the position of the readout electrode is known and the number of readout electrodes is not less than three, the SiPM cell can be determined in the SiPM array according to the position of the readout electrode, the current size of the output current signal of the readout electrode and the principle of charge distribution The two-dimensional location on the.
优选地，如图2所示，当读出电极为4个、且分别位于导电介质层的四个角落A、B、C、D时，以其中一个读出电极为坐标原点，例如以读出电极C为坐标原点，通过下列公式计算注入该电流信号的电流注入点在导电介质层的位置信息：Preferably, as shown in FIG. 2, when there are four readout electrodes and are located at four corners A, B, C, and D of the conductive dielectric layer, one of the readout electrodes is used as the coordinate origin, for example, readout The electrode C is the origin of the coordinates, and the position information of the current injection point injected into the current signal in the conductive dielectric layer is calculated by the following formula:
X＝(I A+I B)/(I A+I B+I c+I D)，Y＝(I A+I D)/(I A+I B+I c+I D)，其中，I A、I B、I c、I D分别是读出电极A、读出电极B、读出电极C和读出电极D输出电流信号的电流大小，(X、Y)为当前采集光信号的SiPM单元在SiPM阵列上的二维坐标。 X = (I A + I B )/(I A + I B + I c + I D ), Y = (I A + I D )/(I A + I B + I c + I D ), where, I A , I B , I c and I D are the current size of the output current signal of read electrode A, read electrode B, read electrode C and read electrode D respectively, (X, Y) are the current collected optical signals The two-dimensional coordinates of the SiPM unit on the SiPM array.
优选地，读出电极的数量为4个，虽然3个读出电极就可以实现二维平面上的位置定位，但利用3个读出电极进行定位的复杂度较高，通过4个读出电极进行定位，能够降低定位的计算复杂度。Preferably, the number of readout electrodes is 4, although 3 readout electrodes can achieve position positioning on a two-dimensional plane, but the complexity of positioning using 3 readout electrodes is relatively high, through 4 readout electrodes Positioning can reduce the computational complexity of positioning.
优选地，导电介质层为特定电阻率的导电材料，一般可以为半导体材料，例如锗膜，避免导电介质层的面电阻率太小导致无法通过读出电极输出的电流信号来对SiPM单元进行定位，也避免导电介质层的面电阻率太大导致电流信号无法在导电介质层扩散。其中，面电阻率由导电介质层的材料、薄膜厚度、加工工艺等因素决定，导电介质层的空间结构简单，是一层比较薄的膜，可直接在SiPM阵列的衬底上覆膜。导电介质层面电阻率的优选范围为1KΩ/m 2～1MΩ/m 2。 Preferably, the conductive dielectric layer is a conductive material with a specific resistivity, which may generally be a semiconductor material, such as a germanium film, to avoid that the surface resistivity of the conductive dielectric layer is too small and the SiPM unit cannot be positioned by reading the current signal output from the electrode It also avoids that the surface resistivity of the conductive medium layer is too large and the current signal cannot be diffused in the conductive medium layer. Among them, the surface resistivity is determined by factors such as the material of the conductive dielectric layer, the thickness of the film, and the processing technology. The spatial structure of the conductive dielectric layer is simple. It is a thin film that can be directly coated on the substrate of the SiPM array. The preferred range of the resistivity of the conductive medium layer is 1KΩ/m 2 to 1MΩ/m 2 .
优选地，衬底为绝缘材料，避免衬底影响到电流信号在导电介质层的扩散。Preferably, the substrate is an insulating material to prevent the substrate from affecting the diffusion of the current signal in the conductive medium layer.
在本发明实施例中，通过导电介质层将SiPM单元转换得到的电流信号进行扩散，由位于导电介质层上不同位置处的读出电极收集扩散后的电流信号，通过读出电极输出收集到的电流信号，并依据读出电极输出的电流信号对SiPM单元进行定位，从而有效地对SiPM阵列的输出通道进行压缩，在导电介质层上无分立的电阻电容等元器件，当SiPM阵列大小变化时无需重新设计介质层上的元器件，且导电介质层容易加工，易于SiPM阵列的扩展和集成。In the embodiment of the present invention, the current signal converted by the SiPM cell is diffused through the conductive dielectric layer, the diffused current signal is collected by the readout electrodes located at different positions on the conductive dielectric layer, and the collected current signal is output through the readout electrode Current signal, and locate the SiPM unit according to the current signal output by the readout electrode, so as to effectively compress the output channel of the SiPM array. There are no discrete resistors and capacitors on the conductive dielectric layer. When the size of the SiPM array changes There is no need to redesign the components on the dielectric layer, and the conductive dielectric layer is easy to process, and it is easy to expand and integrate the SiPM array.
实施例二：Example two:
图3示出了本发明实施例二提供的一种SiPM阵列的信号读出装置的结构，为了便于说明，仅示出了与本发明实施例相关的部分，其中包括：FIG. 3 shows a structure of a signal readout device of a SiPM array provided by Embodiment 2 of the present invention. For ease of description, only parts related to the embodiment of the present invention are shown, including:
信号采集转换单元31，用于当SiPM阵列上的SiPM单元采集到光信号时，通过SiPM单元将光信号转换为电流信号。The signal acquisition and conversion unit 31 is used to convert the optical signal into a current signal through the SiPM unit when the SiPM unit on the SiPM array collects the optical signal.
信号分配单元32，用于通过与所有SiPM单元连接的导电介质层，将电流信号分配给设于导电介质层上的读出电极。The signal distribution unit 32 is used to distribute current signals to the readout electrodes provided on the conductive dielectric layer through the conductive dielectric layer connected to all SiPM units.
在本发明实施例中，在SiPM单元采集到光信号并将光信号转换为相应的电流信号后，将电流信号发送给与所有SiPM单元连接的导电介质层，电流信号在该导电介质层上进行分散，由位于导电介质层上的读出电极对导电介质层上分散开来的电流进行收集。In the embodiment of the present invention, after the SiPM unit collects the optical signal and converts the optical signal into a corresponding current signal, the current signal is sent to the conductive medium layer connected to all SiPM units, and the current signal is performed on the conductive medium layer Dispersed, the current dispersed on the conductive medium layer is collected by the readout electrode located on the conductive medium layer.
优选地，导电介质层覆盖在SiPM阵列的衬底上，从而可以通过导电介质层覆盖的方式，避免SiPM阵列大小发生变化时需要对分立的元器件进行重新设计，只需调整导电介质层在衬底上的覆盖区域即可适应不同大小的SiPM阵列，不涉及剩余设计参数的重新设计，使得SiPM阵列容易扩展，且容易大量加工。Preferably, the conductive dielectric layer covers the substrate of the SiPM array, so that the conductive dielectric layer can be covered to avoid the need to redesign discrete components when the size of the SiPM array changes, and only need to adjust the conductive dielectric layer in the lining The coverage area on the bottom can be adapted to SiPM arrays of different sizes without involving the redesign of the remaining design parameters, making the SiPM array easy to expand and easy to process in large quantities.
其中，导电介质层可以位于衬底与SiPM单元之间，也可以是衬底位于导电介质层和SiPM单元之间，当衬底位于导电介质层和SiPM单元之间时，可通过在衬底上进行穿孔，实现每个SiPM单元与导电介质层的连接。The conductive dielectric layer may be located between the substrate and the SiPM unit, or the substrate may be located between the conductive dielectric layer and the SiPM unit. When the substrate is located between the conductive dielectric layer and the SiPM unit, it may pass through the substrate Perforation is performed to realize the connection between each SiPM unit and the conductive dielectric layer.
优选地，SiPM单元将转换得到的电流信号，通过导电介质层上的电流注入电极，注入导电介质层，其中，SiPM单元与电流注入电极一一对应，从而使得SiPM单元在SiPM阵列上的位置映射为电流注入电极在导电介质层上的位置，通过确定电流信号在导电介质层上的注入位置，能够确定SiPM单元在SiPM阵列上的位置信息。Preferably, the SiPM cell injects the converted current signal into the conductive dielectric layer through the current injection electrode on the conductive dielectric layer, wherein the SiPM cell corresponds to the current injection electrode one-to-one, so that the position of the SiPM cell on the SiPM array is mapped For the position of the current injection electrode on the conductive dielectric layer, the position information of the SiPM cell on the SiPM array can be determined by determining the injection location of the current signal on the conductive dielectric layer.
信号输出单元33，用于通过读出电极输出电流信号。The signal output unit 33 is used to output a current signal through the readout electrode.
在本发明实施例中，导电介质层上的读出电极收集到电流信号后，将收集到的电流信号输出，以便与SiPM阵列连接的处理器对电流信号进行分析，分析得到电流信号所包含的信息、以及当前采集到光信号的SiPM单元在SiPM阵列上的位置，从而通过在衬底上铺设导电介质层，在导电介质层上设置读出电极，电流信号在导电介质层上分散到各个读出电极，而无需为每个SiPM单元设置单独的读出通道，提高了读出通道压缩的效果。In the embodiment of the present invention, the readout electrode on the conductive medium layer collects the current signal, and then outputs the collected current signal, so that the processor connected to the SiPM array can analyze the current signal to obtain the current signal. Information, and the position of the SiPM unit on the SiPM array where the optical signal is currently collected, so that by laying a conductive medium layer on the substrate, a readout electrode is provided on the conductive medium layer, and the current signal is dispersed on the conductive medium layer to each reading The output electrode does not need to set a separate readout channel for each SiPM unit, which improves the compression effect of the readout channel.
优选地，读出电极设置在导电介质层的边缘角落，例如当导电介质层为四边形时，可在四边形的四个角处分别设置读出电极，以便不同读出电极收集往不同方向分散的电流信号。Preferably, the readout electrodes are provided at the corners of the edges of the conductive medium layer. For example, when the conductive medium layer is a quadrilateral, the readout electrodes can be provided at the four corners of the quadrilateral, so that different readout electrodes collect currents scattered in different directions signal.
位置确定单元34，用于并根据每个读出电极的电流输出，确定SiPM单元在SiPM阵列上的位置信息。The position determining unit 34 is used to determine the position information of the SiPM unit on the SiPM array according to the current output of each readout electrode.
在本发明实施例中，在每个读出电极输出收集到的电流信号时，记录每个读出电极输出电流信号的电流大小，根据每个读出电极输出电流信号的电流大小，计算当前采集到光信号的SiPM单元在SiPM阵列上的二维位置。在读出电极位置已知、且读出电极的数量不少于3个时，可以根据读出电极的位置、读出电极输出电流信号的电流大小和电荷分配原理，来确定SiPM单元在SiPM阵列上的二维位置。In the embodiment of the present invention, when each readout electrode outputs the collected current signal, the current magnitude of each readout electrode output current signal is recorded, and the current acquisition is calculated according to the current magnitude of each readout electrode output current signal The two-dimensional position of the SiPM cell on the SiPM array to the optical signal. When the position of the readout electrode is known and the number of readout electrodes is not less than three, the SiPM cell can be determined in the SiPM array according to the position of the readout electrode, the current size of the output current signal of the readout electrode and the principle of charge distribution The two-dimensional location on the.
优选地，读出电极的数量为4个，虽然3个读出电极就可以实现二维平面上的位置定位，但利用3个读出电极进行定位的复杂度较高，通过4个读出电极进行定位，能够降低定位的计算复杂度。Preferably, the number of readout electrodes is 4, although 3 readout electrodes can achieve position positioning on a two-dimensional plane, the complexity of positioning using 3 readout electrodes is relatively high, through 4 readout electrodes Positioning can reduce the computational complexity of positioning.
优选地，导电介质层为特定电阻率的导电材料，一般可以为半导体材料，例如锗膜，避免导电介质层的面电阻率太小导致无法通过读出电极输出的电流信号来对SiPM单元进行定位，也避免导电介质层的面电阻率太大导致电流信号无法在导电介质层扩散。其中，面电阻率由导电介质层的材料、薄膜厚度、加工工艺等因素决定，导电介质层的空间结构简单，是一层比较薄的膜，可直接在SiPM阵列的衬底上覆膜。导电介质层面电阻率的优选范围为1KΩ/m 2～1MΩ/m 2。 Preferably, the conductive dielectric layer is a conductive material with a specific resistivity, which may generally be a semiconductor material, such as a germanium film, to avoid that the surface resistivity of the conductive dielectric layer is too small and the SiPM unit cannot be positioned by reading the current signal output from the electrode It also avoids that the surface resistivity of the conductive medium layer is too large and the current signal cannot be diffused in the conductive medium layer. Among them, the surface resistivity is determined by factors such as the material of the conductive dielectric layer, the thickness of the film, and the processing technology. The spatial structure of the conductive dielectric layer is simple. It is a thin film that can be directly coated on the substrate of the SiPM array. The preferred range of the resistivity of the conductive medium layer is 1KΩ/m 2 to 1MΩ/m 2 .
优选地，衬底为绝缘材料，避免衬底影响到电流信号在导电介质层的扩散。在本发明实施例中，通过导电介质层将SiPM单元转换得到的电流信号进行扩散，由位于导电介质层上不同位置处的读出电极收集扩散后的电流信号，通过读出电极输出收集到的电流信号，并依据读出电极输出的电流信号对SiPM单元进行定位，从而有效地对SiPM阵列的输出通道进行压缩，在导电介质层上 无分立的电阻电容等元器件，当SiPM阵列大小变化时无需重新设计介质层上的元器件，且导电介质层容易加工，易于SiPM阵列的扩展和集成。Preferably, the substrate is an insulating material to prevent the substrate from affecting the diffusion of the current signal in the conductive medium layer. In the embodiment of the present invention, the current signal converted by the SiPM cell is diffused through the conductive dielectric layer, the diffused current signal is collected by the readout electrodes located at different positions on the conductive dielectric layer, and the collected current signal is output through the readout electrode Current signal, and locate the SiPM unit according to the current signal output by the readout electrode, so as to effectively compress the output channel of the SiPM array. There are no discrete resistors and capacitors on the conductive dielectric layer. When the size of the SiPM array changes There is no need to redesign the components on the dielectric layer, and the conductive dielectric layer is easy to process, and it is easy to expand and integrate the SiPM array.
在本发明实施例中，一种SiPM阵列的信号读出装置的各单元可由相应的硬件或软件单元实现，各单元可以为独立的软、硬件单元，也可以集成为一个软、硬件单元，在此不用以限制本发明。In the embodiment of the present invention, each unit of a signal readout device of a SiPM array may be implemented by a corresponding hardware or software unit, and each unit may be an independent software and hardware unit, or may be integrated into one software and hardware unit. This is not to limit the invention.
实施例三：Example three:
图4示出了本发明实施例三提供的一种SiPM阵列模块的结构，为了便于说明，仅示出了与本发明实施例相关的部分，其中包括：FIG. 4 shows a structure of a SiPM array module provided in Embodiment 3 of the present invention. For ease of description, only parts related to the embodiment of the present invention are shown, including:
衬底41，衬底41为绝缘材料； Substrate 41, which is an insulating material;
位于衬底41上、且形成SiPM阵列42的SiPM单元43，用于采集光信号并将光信号转换为电流信号；The SiPM unit 43 on the substrate 41 and forming the SiPM array 42 is used to collect optical signals and convert the optical signals into current signals;
与所有SiPM单元43连接的导电介质层44，用于将由SiPM单元43转换得到的电流信号分配给位于导电介质层44上的读出电极45；以及The conductive dielectric layer 44 connected to all SiPM units 43 is used to distribute the current signal converted by the SiPM unit 43 to the readout electrode 45 located on the conductive dielectric layer 44; and
读出电极45，用于收集分配到的电流信号并输出。The readout electrode 45 is used to collect and output the distributed current signal.
在本发明实施例中，N*M个SiPM单元43形成SiPM阵列42，N和M的数值由技术人员根据实际情况决定，在此不进行限定。在SiPM单元43采集到光信号并将采集的光信号转换为电流信号后，将电流信号通过与导电介质层44进行扩散，由位于导电介质层44上不同位置处的读出电极45收集分散到相应位置处的电流信号，并由读出电极45输出收集到的电流信号，再由与SiPM阵列42连接的处理器对电流信号进行分析、并确定当前采集到光信号的SiPM单元在SiPM阵列42上的位置信息。In the embodiment of the present invention, N*M SiPM units 43 form a SiPM array 42. The values of N and M are determined by the technician according to actual conditions, and are not limited herein. After the SiPM unit 43 collects the optical signal and converts the collected optical signal into a current signal, the current signal is diffused through the conductive medium layer 44 and collected and dispersed by the readout electrodes 45 located at different positions on the conductive medium layer 44 The current signal at the corresponding position, and the collected current signal is output by the readout electrode 45, and then the processor connected to the SiPM array 42 analyzes the current signal and determines that the SiPM unit currently collecting the optical signal is in the SiPM array 42 Location information.
优选地，导电介质层44覆盖在SiPM阵列42的衬底41上，从而可以通过导电介质层44覆盖的方式，避免SiPM阵列42大小发生变化时需要对分立的元器件进行重新设计，只需调整导电介质层44在衬底41上的覆盖区域即可适应不同大小的SiPM阵列42，不涉及剩余设计参数的重新设计，使得SiPM阵列42容易扩展，且容易大量加工。Preferably, the conductive dielectric layer 44 covers the substrate 41 of the SiPM array 42, so that it can be covered by the conductive dielectric layer 44 to avoid the need to redesign discrete components when the size of the SiPM array 42 changes, and only needs to be adjusted The coverage area of the conductive dielectric layer 44 on the substrate 41 can be adapted to SiPM arrays 42 of different sizes, and does not involve the redesign of the remaining design parameters, making the SiPM array 42 easy to expand and easy to process in large quantities.
其中，导电介质层44可以位于衬底41与SiPM单元43之间，也可以是衬底41位于导电介质层44和SiPM单元43之间，当衬底41位于导电介质层44和SiPM单元43之间时，可通过在衬底41上进行穿孔，实现每个SiPM单元43与导电介质层44的连接。The conductive dielectric layer 44 may be located between the substrate 41 and the SiPM unit 43, or the substrate 41 may be located between the conductive dielectric layer 44 and the SiPM unit 43, when the substrate 41 is located between the conductive dielectric layer 44 and the SiPM unit 43 From time to time, each SiPM cell 43 can be connected to the conductive dielectric layer 44 by perforating the substrate 41.
优选地，导电介质层44为指定电阻率的导电材料，一般可以为半导体材料，例如锗膜，避免导电介质层44的面电阻率太小导致无法通过读出电极45输出的电流信号来对SiPM单元43进行定位，也避免导电介质层44的面电阻率太大导致电流信号无法在导电介质层44扩散。其中，面电阻率由导电介质层44的材料、薄膜厚度、加工工艺等因素决定，导电介质层44的空间结构简单，是一层比较薄的膜，可直接在SiPM阵列42的衬底41上覆膜。导电介质层44面电阻率的优选范围为1KΩ/m 2～1MΩ/m 2。 Preferably, the conductive dielectric layer 44 is a conductive material with a specified resistivity, which may generally be a semiconductor material, such as a germanium film, to avoid that the surface resistivity of the conductive dielectric layer 44 is too small to cause the current signal output from the readout electrode 45 to affect the SiPM The positioning of the unit 43 also prevents the surface resistivity of the conductive medium layer 44 from being too large, so that the current signal cannot diffuse in the conductive medium layer 44. Among them, the surface resistivity is determined by factors such as the material of the conductive dielectric layer 44, the thickness of the film, and the processing technology. The spatial structure of the conductive dielectric layer 44 is simple, and it is a thin film that can be directly on the substrate 41 of the SiPM array 42. Laminating. The preferred range of the surface resistivity of the conductive medium layer 44 is 1KΩ/m 2 to 1MΩ/m 2 .
优选地，SiPM单元43的输出端与导电介质层44通过对应的电流注入电极46进行连接，SiPM单元43转换得到的电流信号通过电流注入电极46注入导电介质层44，其中，SiPM单元43与电流注入电极46一一对应，从而使得SiPM单元43在SiPM阵列42上的位置映射为电流注入电极46在导电介质层44上的位置，通过确定电流信号在导电介质层44上的注入位置，能够确定SiPM单元43在SiPM阵列42上的位置信息。Preferably, the output end of the SiPM unit 43 is connected to the conductive dielectric layer 44 through a corresponding current injection electrode 46, and the current signal converted by the SiPM unit 43 is injected into the conductive dielectric layer 44 through the current injection electrode 46, wherein the SiPM unit 43 and the current The injection electrodes 46 correspond one-to-one, so that the position of the SiPM unit 43 on the SiPM array 42 is mapped to the position of the current injection electrode 46 on the conductive dielectric layer 44. By determining the injection position of the current signal on the conductive dielectric layer 44, it can be determined The position information of the SiPM unit 43 on the SiPM array 42.
优选地，读出电极45位于导电介质层44的边缘，以便不同读出电极45收集往不同方向分散的电流信号。Preferably, the readout electrode 45 is located at the edge of the conductive medium layer 44 so that different readout electrodes 45 collect current signals dispersed in different directions.
在本发明实施例中，在读出电极45位置已知、且读出电极45的数量不少于3个时，处理器可以根据读出电极45的位置、读出电极45输出电流信号的电流大小和电荷分配原理，来确定SiPM单元43在SiPM阵列42上的二维位置。优选地，读出电极45的数量为4个，虽然3个读出电极45就可以实现二维平面上的位置定位，但利用3个读出电极45进行定位的复杂度较高，通过4个读出电极45进行定位，能够降低定位的计算复杂度。In the embodiment of the present invention, when the position of the readout electrode 45 is known and the number of the readout electrode 45 is not less than three, the processor may output the current of the current signal according to the position of the readout electrode 45 and the readout electrode 45 The size and the principle of charge distribution determine the two-dimensional position of the SiPM unit 43 on the SiPM array 42. Preferably, the number of readout electrodes 45 is 4. Although three readout electrodes 45 can achieve position positioning on a two-dimensional plane, the complexity of positioning using three readout electrodes 45 is relatively high. The positioning of the readout electrode 45 can reduce the computational complexity of positioning.
在本发明实施例中，为了能够清楚表示SiPM阵列模块的结构，在图4中 将SiPM阵列模块分成两部分展示，一部分为SiPM单元43形成的SiPM阵列42，另一部分包括衬底41、导电介质层44、读出电极45和电流注入电极46，在实际结构中，这两部分是连接在一起的。另外，图4中读出电极45的位置和数量并不作为本发明实施例对读出电极45位置和数量的限制。In the embodiment of the present invention, in order to clearly show the structure of the SiPM array module, the SiPM array module is divided into two parts in FIG. 4, one part is the SiPM array 42 formed by the SiPM unit 43, and the other part includes the substrate 41 and the conductive medium In the actual structure, the layer 44, the readout electrode 45 and the current injection electrode 46 are connected together. In addition, the position and number of the readout electrodes 45 in FIG. 4 are not intended to limit the position and number of the readout electrodes 45 in the embodiment of the present invention.
在本发明实施例中，SiPM阵列模块包括衬底、形成SiPM阵列的SiPM单元、导电介质层和读出电极，导电介质层将SiPM单元转换得到的电流信号进行扩散，由位于导电介质层上不同位置处的读出电极收集扩散后的电流信号，通过读出电极输出收集到的电流信号，从而有效地对SiPM阵列的输出通道进行压缩，在导电介质层上无分立的电阻电容等元器件，当SiPM阵列大小变化时无需重新设计介质层上的元器件，且导电介质层容易加工，易于SiPM阵列的扩展和集成。In the embodiment of the present invention, the SiPM array module includes a substrate, a SiPM cell forming a SiPM array, a conductive dielectric layer, and a readout electrode. The conductive dielectric layer diffuses the current signal converted by the SiPM cell, which is different from the conductive dielectric layer. The readout electrode at the location collects the diffused current signal and outputs the collected current signal through the readout electrode, thereby effectively compressing the output channel of the SiPM array, and there are no discrete resistors and capacitors on the conductive medium layer. When the size of the SiPM array changes, there is no need to redesign the components on the dielectric layer, and the conductive dielectric layer is easy to process, and it is easy to expand and integrate the SiPM array.
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modification, equivalent replacement and improvement made within the spirit and principle of the present invention should be included in the protection of the present invention Within range.

Claims (10)

  1. 一种SiPM阵列的信号读出方法，其特征在于，所述方法包括下述步骤：A signal reading method for a SiPM array, characterized in that the method includes the following steps:
    当SiPM阵列上的SiPM单元采集到光信号时，通过所述SiPM单元将所述光信号转换为电流信号；When the SiPM unit on the SiPM array collects the optical signal, the optical signal is converted into a current signal by the SiPM unit;
    通过与所有所述SiPM单元连接的导电介质层，将所述电流信号分配给设于所述导电介质层上的读出电极；Distribute the current signal to the readout electrodes provided on the conductive medium layer through the conductive medium layer connected to all the SiPM units;
    通过所述读出电极输出所述电流信号；Output the current signal through the readout electrode;
    根据每个所述读出电极的电流输出，确定所述SiPM单元在所述SiPM阵列上的位置信息。According to the current output of each readout electrode, the position information of the SiPM cell on the SiPM array is determined.
  2. 如权利要求1所述的方法，其特征在于，通过所述SiPM单元将所述光信号转换为电流信号的步骤之后，将所述电流信号分配给设于所述导电介质层上的读出电极的步骤之前，所述方法还包括：The method according to claim 1, wherein after the step of converting the optical signal into a current signal by the SiPM unit, the current signal is distributed to the readout electrode provided on the conductive medium layer Before the step, the method further includes:
    将所述电流信号通过所述导电介质层上的电流注入电极，注入所述导电介质层，所述SiPM单元与所述电流注入电极一一对应。The current signal is injected into the conductive medium layer through the current injection electrode on the conductive medium layer, and the SiPM unit corresponds to the current injection electrode in one-to-one correspondence.
  3. 如权利要求1所述的方法，其特征在于，将所述电流信号分配给设于所述导电介质层上的读出电极的步骤，包括：The method of claim 1, wherein the step of distributing the current signal to the readout electrode provided on the conductive medium layer includes:
    将所述电流信号通过所述导电介质层进行扩散，由位于所述导电介质层上不同位置处的所述读出电极对扩散中的所述电流信号进行收集。The current signal is diffused through the conductive medium layer, and the current signals in the diffusion are collected by the readout electrodes located at different positions on the conductive medium layer.
  4. 如权利要求1所述的方法，其特征在于，确定所述SiPM单元在所述SiPM阵列上的位置信息的步骤，包括：The method according to claim 1, wherein the step of determining the position information of the SiPM unit on the SiPM array comprises:
    依据每个所述读出电极输出电流信号的电流大小，计算所述SiPM单元在所述SiPM阵列上的二维位置。The two-dimensional position of the SiPM cell on the SiPM array is calculated according to the current magnitude of the output current signal of each readout electrode.
  5. 一种SiPM阵列的信号读出装置，其特征在于，所述装置包括：A signal readout device for a SiPM array, characterized in that the device includes:
    信号采集转换单元，用于当SiPM阵列上的SiPM单元采集到光信号时，通过所述SiPM单元将所述光信号转换为电流信号；The signal acquisition and conversion unit is used to convert the optical signal into a current signal through the SiPM unit when the SiPM unit on the SiPM array collects the optical signal;
    信号分配单元，用于通过与所有所述SiPM单元连接的导电介质层，将所 述电流信号分配给设于所述导电介质层上的读出电极；A signal distribution unit for distributing the current signal to the readout electrode provided on the conductive medium layer through the conductive medium layer connected to all the SiPM units;
    信号输出单元，用于通过所述读出电极输出所述电流信号；以及A signal output unit for outputting the current signal through the readout electrode; and
    位置确定单元，用于根据每个所述读出电极的电流输出，确定所述SiPM单元在所述SiPM阵列上的位置信息。The position determining unit is used to determine the position information of the SiPM unit on the SiPM array according to the current output of each readout electrode.
  6. 一种SiPM阵列模块，其特征在于，所述SiPM阵列模块包括：A SiPM array module, characterized in that the SiPM array module includes:
    衬底，所述衬底为绝缘材料；Substrate, the substrate is an insulating material;
    位于所述衬底上、且形成SiPM阵列的SiPM单元，用于采集光信号并将所述光信号转换为电流信号；A SiPM unit located on the substrate and forming a SiPM array, used for collecting optical signals and converting the optical signals into current signals;
    与所有所述SiPM单元连接的导电介质层，用于将由所述SiPM单元转换得到的电流信号分配给位于所述导电介质层上的读出电极；以及A conductive medium layer connected to all of the SiPM units, for distributing the current signal converted by the SiPM unit to the readout electrodes located on the conductive medium layer; and
    所述读出电极，用于收集分配到的电流信号并输出。The readout electrode is used to collect and output the distributed current signal.
  7. 如权利要求6所述的SiPM阵列模块，其特征在于，所述导电介质层覆盖在所述衬底上。The SiPM array module according to claim 6, wherein the conductive medium layer covers the substrate.
  8. 如权利要求6所述的SiPM阵列模块，其特征在于，所述导电介质层为指定电阻率的导电材料。The SiPM array module according to claim 6, wherein the conductive medium layer is a conductive material with a specified resistivity.
  9. 如权利要求6所述的SiPM阵列模块，其特征在于，所述SiPM单元的输出端与所述导电介质层通过对应的电流注入电极进行连接。The SiPM array module according to claim 6, wherein the output end of the SiPM unit and the conductive medium layer are connected through corresponding current injection electrodes.
  10. 如权利要求6所述的SiPM阵列模块，其特征在于，所述读出电极位于所述导电介质层的边缘。The SiPM array module of claim 6, wherein the readout electrode is located at an edge of the conductive dielectric layer.
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