CN106558832A - COS semiconductor laser arrays - Google Patents
COS semiconductor laser arrays Download PDFInfo
- Publication number
- CN106558832A CN106558832A CN201610455137.5A CN201610455137A CN106558832A CN 106558832 A CN106558832 A CN 106558832A CN 201610455137 A CN201610455137 A CN 201610455137A CN 106558832 A CN106558832 A CN 106558832A
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- substrate
- cos
- laser
- chips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000003491 array Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 238000007493 shaping process Methods 0.000 claims abstract description 23
- 241000218202 Coptis Species 0.000 claims description 4
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 4
- 230000005496 eutectics Effects 0.000 claims description 4
- 230000010287 polarization Effects 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000011806 microball Substances 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000011805 ball Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000006263 metalation reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011897 real-time detection Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention relates to a kind of laser array, and in particular to a kind of COS semiconductor laser arrays.Which includes substrate, and substrate is gone into battle and shows at least one semiconductor laser COS chips, and a steering optical module and a beam shaping lens are equipped with arbitrary semiconductor laser COS chips；Optical module is turned to for correspondence semiconductor laser COS chips are turned to 90 ° of outputs parallel to the laser beam that substrate is launched, beam shaping lens are collimated for the laser beam after optical module is turned to is turned to correspondence.The present invention possesses preferably heat dispersion.
Description
Technical field
The present invention relates to a kind of laser array, and in particular to a kind of COS semiconductor laser arrays.
Background technology
The visible light lasers light source adopted by laser display and lighting field mainly has semiconductor pumped Solid State Laser
Two kinds of device and semiconductor laser, with the continuous lifting of semiconductor laser power, due to semiconductor pumped
Solid state laser exist laser speckle it is high, can operating environment requirements are harsh, high cost the shortcomings of, it is more and more
Lasing light emitter select semiconductor laser.Wherein, semiconductor laser array is integrated with less volume
Dozens of luminescence chip, defines tens of watts of laser output.But, existing semiconductor laser array
Semiconductor laser COS chips are adopted mostly, the chip is lateral emitting form, therefore in array package
Need on base, have the ridge-roof type structure perpendicular to base plate realize array light output, as the ridge-roof type is tied
Contact area between structure and base is limited, and with the continuous lifting of laser chip output, its radiating is asked
Topic is gradually highlighted.In addition, existing semiconductor laser array is more intensive due to arranging so which was made in the later stage
The shaping carried out to whole array output beam with during is more difficult.
The content of the invention
Present disclosure is to provide a kind of COS semiconductor laser arrays, and which can preferably overcome existing
The problem of semiconductor laser array poor heat radiation.
COS semiconductor laser arrays of the invention, which includes substrate, and substrate is gone into battle and shows at least one
Individual semiconductor laser COS chips, are equipped with a steering optics group at arbitrary semiconductor laser COS chips
Part and a beam shaping lens；Turn to optical module be used for will correspondence semiconductor laser COS chips parallel to
The laser beam of substrate transmitting turns to 90 ° of outputs, and beam shaping lens are turned to for turning to optical module to correspondence
Laser beam afterwards is collimated.
In the present invention, the electrical connection bottom surface of multiple semiconductor laser COS chips can be welded on substrate
Together, compared to existing set-up mode, which can preferably increase semiconductor laser COS chips and base
Contact area between plate such that it is able to bring preferably heat dispersion.In addition, arbitrary quasiconductor of the present invention
A steering optical module can be located directly opposite at the light-emitting area of laser instrument COS chips such that it is able to compared with
The laser beam of semiconductor laser COS chip emissions is turned to into 90 ° of outputs goodly, and the light beam after turning to is also
Can Jing beam shaping lens carry out shaping such that it is able to obtain nearly collimated light beam such that it is able to effectively drop
Shaping difficulty during low subsequent applications, obtains the output beam of better quality.
Preferably, turning to optical module adopts polarization splitting prism or 45 ° of dielectric mirrors.
In the present invention, turn to optical module and preferably adopt polarization splitting prism or 45 ° of dielectric mirrors, from
And the laser beam for being capable of preferably noise spectra of semiconductor lasers COS chip emission is turned to.
Preferably, beam shaping lens adopt micro ball lens or GRIN Lens.
In the present invention, beam shaping lens preferably adopt micro ball lens or GRIN Lens such that it is able to
Shaping is carried out to the laser beam after the steering of diverted optical module preferably, to obtain nearly directional light.
Preferably, semiconductor laser COS chips using eutectic welding by the way of and substrate connection.
In the present invention, semiconductor laser COS chips can using eutectic welding by the way of and substrate connection,
So as to can also bring preferably heat dispersion while weld strength is ensured.
Preferably, substrate laid inside has a connection circuit, semiconductor laser COS chips be connected circuit
Gold thread connects.
In the present invention, semiconductor laser COS chips can connect with circuit gold thread is connected such that it is able to compared with
Electric energy loss in the line is reduced goodly, also can preferably reduce circuit in work while energy saving
The heat of middle generation.
Preferably, temperature sensor is provided with substrate, temperature sensor is used to gather semiconductor laser COS
The operating temperature correspondence generation temperature signal of chip.
In the present invention, temperature sensor can be set at substrate such that it is able to which preferably real-time detection is partly led
The operating temperature of body laser COS chips such that it is able in real time the working condition of laser array is carried out
Adjustment, preferably ensure that its job stability.
Preferably, substrate is on the base, base position is provided with electric interfaces, electric interfaces include for
By connecting power supply interface of the circuit to semiconductor laser COS chip power supplies, and for reading temperature letter
Number data-interface.
In the present invention, power supply interface can have multiple, and multiple semiconductor laser COS chips can be corresponded to
The quantity of power supply interface is divided into multigroup, and the semiconductor laser chip of each of which group being capable of serial or parallel connection
It is attached from different power supply interfaces after connection, is enable to by carrying out to different power supply interfaces
Power supply, and the laser array of the present invention is operated with different states, and then can be cleverer
Apply in actual production livingly.
In the present invention, multiple semiconductor laser COS chips can also carry out array in centrosymmetric mode,
So that the output beam of laser array can preferably be presented round symmetry characteristic, and then can drop significantly
The difficulty of low follow-up shaping.
In the present invention, multiple semiconductor laser COS chips can include that multiple red, green, blues are trichroism partly leads
Body laser COS chips a, so that semiconductor laser array can be while or timesharing output RGB
Laser, can preferably obtain the white light source suitable for showing or illuminate through simple even photosystem, keep away
Complicated combined optical system is exempted from.
Preferably, steering optical module and beam shaping lens are bonded in corresponding position using glue.
Preferably, the junction for turning to optical module with substrate is configured with layer of metal layer to be welded on substrate
Corresponding position.
In the present invention, turning to optical module and beam shaping lens can carry out surface metalation and be weldingly fixed on
Corresponding position such that it is able to more firmly with substrate connection.
Description of the drawings
Fig. 1 is the connection diagram of multiple semiconductor laser COS chips and substrate in embodiment 1；
Fig. 2 is the connection diagram of single semiconductor laser COS chips and substrate in embodiment 1.
Specific embodiment
To further appreciate that present disclosure, the present invention is described in detail in conjunction with the accompanying drawings and embodiments.Should
When being understood by, embodiment be only the present invention is explained and and it is non-limiting.
Embodiment 1
As shown in Figure 1 and Figure 2, a kind of COS semiconductor laser arrays are provided in the present embodiment.Its bag
The substrate 110 in base (not shown) is included, substrate 110 is gone into battle and shows multiple semiconductor lasers
COS chips 120, are equipped with a steering optical module 130 at arbitrary semiconductor laser COS chips 120
With a beam shaping lens 140.Wherein, turning to optical module 130 is used for correspondence semiconductor laser COS
Chip 120 turns to 90 ° of outputs parallel to the laser beam that substrate 110 is launched, and beam shaping lens 140 are used for
Turn to the laser beam after optical module 130 is turned to collimate to correspondence.In addition, 110 laid inside of substrate
There is connection circuit (not shown), semiconductor laser COS chips 120 connect with circuit gold thread is connected；
Temperature sensor is provided with substrate 110, temperature sensor is used to gather semiconductor laser COS chips 120
Operating temperature and correspondence produce temperature signal；Base position is additionally provided with electric interfaces (not shown), electrically
Interface includes the power supply interface for powering to semiconductor laser COS chips 120 by connection circuit, with
And for reading the data-interface of temperature signal.
In the present embodiment, semiconductor laser COS chips 120 using eutectic welding by the way of with substrate 110
Connection, turns to optical module 130 and adopts polarization splitting prism, and beam shaping lens 140 are saturating using tiny balls
Mirror.Turn to optical module 130 and beam shaping lens 140 are bonded in the correspondence of substrate 110 using glue
Installed position.
In the present embodiment, multiple semiconductor laser COS chips 120 are same color chip and with rectangular mode battle array
Row.
In addition, the spacing between arbitrary neighborhood semiconductor laser COS chips 120 can be in 2～5mm
Any value, in the present embodiment be 2.5mm such that it is able to obtain preferably heat dispersion and while can and
Turn round and look at the volume of laser array.
Embodiment 2
The present embodiment also provides a kind of laser array, and which with the difference of embodiment 1 is：Turn to
Optical module 130 adopts 45 ° of dielectric mirrors, beam shaping lens 140 to adopt GRIN Lens；Turn to
Optical module 130 is configured with layer of metal layer with the junction of substrate 110 to be welded on 110 corresponding position of substrate
Put place.
Embodiment 3
The present embodiment also provides a kind of laser array, and which with the difference of embodiment 1 is：It is multiple
Semiconductor laser COS chips 120 include three color chip of red, green, blue, and carry out in the way of circle is symmetrical
Array；Wherein, the chip of different colours is independently-powered.
In addition, in the present embodiment, the power ratio of three color chips is 1:0.86:0.52, energy during so as to working at the same time
The white laser beam of preferable colour temperature is obtained enough.
Below schematically the present invention and embodiments thereof are described, the description does not have restricted, attached
Shown in figure is also one of embodiments of the present invention, and actual structure is not limited thereto.So,
If one of ordinary skill in the art is enlightened by which, in the case of without departing from the invention objective, no
Jing creatively designs the frame mode similar to the technical scheme and embodiment, all should belong to the present invention's
Protection domain.
Claims (9)
1.COS semiconductor laser arrays, it is characterised in that：Including substrate (110), substrate (110)
Go into battle and show at least one semiconductor laser COS chips (120), arbitrary semiconductor laser COS chips
(120) place is equipped with a steering optical module (130) and a beam shaping lens (140)；Turn to optics
Component (130) is launched parallel to substrate (110) for corresponding to semiconductor laser COS chips (120)
Laser beam turn to 90 ° output, beam shaping lens (140) for correspondence turn to optical module (130)
Laser beam after steering is collimated.
2. laser array according to claim 1, it is characterised in that：Turn to optical module (130)
Using polarization splitting prism or 45 ° of dielectric mirrors.
3. laser array according to claim 1, it is characterised in that：Beam shaping lens (140)
Using micro ball lens or GRIN Lens.
4. laser array according to claim 1, it is characterised in that：Semiconductor laser COS
Chip (120) is connected with substrate (110) by the way of eutectic welding.
5. laser array according to claim 4, it is characterised in that：Paving inside substrate (110)
Connection circuit is provided with, semiconductor laser COS chips (120) connects with circuit gold thread is connected.
6. laser array according to claim 5, it is characterised in that：Substrate (110) place is provided with
Temperature sensor, temperature sensor are used for the operating temperature for gathering semiconductor laser COS chips (120)
And correspondence produces temperature signal.
7. laser array according to claim 6, it is characterised in that：Substrate (110) is located at one
On base, base position is provided with electric interfaces, and electric interfaces are included for by connecting circuit to semiconductor laser
The power supply interface that device COS chips (120) is powered, and for reading the data-interface of temperature signal.
8. according to arbitrary described laser array in claim 1～7, it is characterised in that：Turn to optics group
Part (130) and beam shaping lens (140) are bonded in corresponding position using glue.
9. laser array according to claim 8, it is characterised in that：Turn to optical module (130)
Layer of metal layer is configured with the junction of substrate (110) to be welded on substrate (110) corresponding position.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510631374.8A CN105186283A (en) | 2015-09-29 | 2015-09-29 | Cos semiconductor laser array |
| CN2015106313748 | 2015-09-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106558832A true CN106558832A (en) | 2017-04-05 |
Family
ID=54908217
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510631374.8A Withdrawn CN105186283A (en) | 2015-09-29 | 2015-09-29 | Cos semiconductor laser array |
| CN201620619635.4U Expired - Fee Related CN205724367U (en) | 2015-09-29 | 2016-06-21 | Cos semiconductor laser array |
| CN201610455137.5A Pending CN106558832A (en) | 2015-09-29 | 2016-06-21 | COS semiconductor laser arrays |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510631374.8A Withdrawn CN105186283A (en) | 2015-09-29 | 2015-09-29 | Cos semiconductor laser array |
| CN201620619635.4U Expired - Fee Related CN205724367U (en) | 2015-09-29 | 2016-06-21 | Cos semiconductor laser array |
Country Status (1)
| Country | Link |
|---|---|
| CN (3) | CN105186283A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109560455A (en) * | 2017-09-26 | 2019-04-02 | 青岛海信激光显示股份有限公司 | A kind of laser array |
| CN109560452A (en) * | 2017-09-26 | 2019-04-02 | 青岛海信激光显示股份有限公司 | A kind of laser array and laser light source |
| US10642138B2 (en) | 2017-09-26 | 2020-05-05 | Qingdao Hisense Laser Display Co., Ltd. | Laser array, laser light source and laser projection device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105186283A (en) * | 2015-09-29 | 2015-12-23 | 北京为世联合科技有限公司 | Cos semiconductor laser array |
| CN111146690B (en) * | 2020-01-06 | 2021-09-07 | 常州纵慧芯光半导体科技有限公司 | Laser module and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090245315A1 (en) * | 2008-03-28 | 2009-10-01 | Victor Faybishenko | Laser diode assemblies |
| US20120081893A1 (en) * | 2010-09-30 | 2012-04-05 | Victor Faybishenko | Laser diode combiner modules |
| CN103368066A (en) * | 2013-07-29 | 2013-10-23 | 武汉锐科光纤激光器技术有限责任公司 | Inclined plane type multi-tube semiconductor laser coupling device and method |
| CN104007558A (en) * | 2014-05-07 | 2014-08-27 | 武汉锐科光纤激光器技术有限责任公司 | Semiconductor laser polarization beam combining device and coupling method |
| CN205724367U (en) * | 2015-09-29 | 2016-11-23 | 北京为世联合科技有限公司 | Cos semiconductor laser array |
-
2015
- 2015-09-29 CN CN201510631374.8A patent/CN105186283A/en not_active Withdrawn
-
2016
- 2016-06-21 CN CN201620619635.4U patent/CN205724367U/en not_active Expired - Fee Related
- 2016-06-21 CN CN201610455137.5A patent/CN106558832A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090245315A1 (en) * | 2008-03-28 | 2009-10-01 | Victor Faybishenko | Laser diode assemblies |
| US20120081893A1 (en) * | 2010-09-30 | 2012-04-05 | Victor Faybishenko | Laser diode combiner modules |
| CN103368066A (en) * | 2013-07-29 | 2013-10-23 | 武汉锐科光纤激光器技术有限责任公司 | Inclined plane type multi-tube semiconductor laser coupling device and method |
| CN104007558A (en) * | 2014-05-07 | 2014-08-27 | 武汉锐科光纤激光器技术有限责任公司 | Semiconductor laser polarization beam combining device and coupling method |
| CN205724367U (en) * | 2015-09-29 | 2016-11-23 | 北京为世联合科技有限公司 | Cos semiconductor laser array |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109560455A (en) * | 2017-09-26 | 2019-04-02 | 青岛海信激光显示股份有限公司 | A kind of laser array |
| CN109560452A (en) * | 2017-09-26 | 2019-04-02 | 青岛海信激光显示股份有限公司 | A kind of laser array and laser light source |
| US10642138B2 (en) | 2017-09-26 | 2020-05-05 | Qingdao Hisense Laser Display Co., Ltd. | Laser array, laser light source and laser projection device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN205724367U (en) | 2016-11-23 |
| CN105186283A (en) | 2015-12-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170405 |
|
| RJ01 | Rejection of invention patent application after publication |