CN205724367U - Cos semiconductor laser array - Google Patents
Cos semiconductor laser array Download PDFInfo
- Publication number
- CN205724367U CN205724367U CN201620619635.4U CN201620619635U CN205724367U CN 205724367 U CN205724367 U CN 205724367U CN 201620619635 U CN201620619635 U CN 201620619635U CN 205724367 U CN205724367 U CN 205724367U
- Authority
- CN
- China
- Prior art keywords
- substrate
- semiconductor laser
- optical module
- laser
- cos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
COS semiconductor laser array of the present utility model, it includes that substrate, substrate are gone into battle and shows at least one semiconductor laser COS chip, is equipped with one and turns to optical module and a beam shaping lens at arbitrary semiconductor laser COS chip；The laser beam turning to optical module to launch for corresponding semiconductor laser COS chip is parallel to substrate turns to 90 ° of outputs, beam shaping lens laser beam after turning to optical module to turn to correspondence collimates, in this utility model, turn to optical module and beam shaping lens can carry out surface metalation and be weldingly fixed on corresponding position such that it is able to be the most firmly connected with substrate.Preferably ensure that its job stability.
Description
Technical field
The present invention relates to a kind of laser array, relate to a kind of COS semiconductor laser array.
Background technology
The visible light lasers light source that laser display and lighting field are used mainly have diode pumped solid state laser and
Semiconductor laser two kinds, along with the continuous lifting of semiconductor laser power, owing to diode pumped solid state laser exists
Laser speckle is high, can operating environment requirements is harsh, high in cost of production shortcoming, increasing lasing light emitter selects semiconductor laser.
Wherein, semiconductor laser array is integrated with dozens of luminescence chip in less volume, and the laser defining tens of watts is defeated
Go out.But, existing semiconductor laser array uses semiconductor laser COS chip mostly, and this chip is lateral emitting shape
Formula, therefore needs have the ridge-roof type structure being perpendicular to base plate could realize the output of array light on base when array package, due to
Contact area between this ridge-roof type structure and base is limited, and along with the continuous lifting of laser chip output, its heat radiation is asked
Topic gradually highlights.It addition, existing semiconductor laser array due to arrangement the most intensive so that its later stage use during to whole
The shaping that individual array output beam is carried out is the most difficult.
Summary of the invention
Present disclosure is to provide a kind of COS semiconductor laser array, and it can preferably overcome existing quasiconductor
The problem of laser array poor heat radiation.
COS semiconductor laser array according to the present invention, it includes that substrate, substrate are gone into battle and shows at least one quasiconductor
Laser instrument COS chip, is equipped with one at arbitrary semiconductor laser COS chip and turns to optical module and a beam shaping lens；
The laser beam turning to optical module to launch for corresponding semiconductor laser COS chip is parallel to substrate turns to 90 ° of outputs, light
Bundle shaping lens laser beam after turning to optical module to turn to correspondence collimates.
In the present invention, the electrical connection bottom surface of multiple semiconductor laser COS chips can all weld together with substrate, phase
Compared with existing set-up mode, it can preferably increase the contact area between semiconductor laser COS chip and substrate, thus
Preferably heat dispersion can be brought.It addition, can the most just at the light-emitting area of arbitrary semiconductor laser COS chip of the present invention
Arrange one over the ground and turn to optical module such that it is able to preferably the laser beam of semiconductor laser COS chip emission is turned to
90 ° of outputs, and the light beam after turning to can also carry out shaping through beam shaping lens such that it is able to obtain nearly collimated light beam, from
And shaping difficulty when can be effectively reduced subsequent applications, obtain the output beam of better quality.
As preferably, optical module is turned to use polarization splitting prism or 45 ° of dielectric mirrors.
In the present invention, optical module is turned to preferably to use polarization splitting prism or 45 ° of dielectric mirrors such that it is able to relatively
The laser beam of good ground noise spectra of semiconductor lasers COS chip emission turns to.
As preferably, beam shaping lens uses micro ball lens or GRIN Lens.
In the present invention, beam shaping lens preferably uses micro ball lens or GRIN Lens such that it is able to preferably
Laser beam after turning to diverted optical module carries out shaping, to obtain nearly directional light.
As preferably, semiconductor laser COS chip uses the mode of eutectic welding to be connected with substrate.
In the present invention, the mode that semiconductor laser COS chip can use eutectic to weld is connected with substrate, thus is protecting
It also is able to bring preferably heat dispersion while card weld strength.
As preferably, substrate laid inside has connection circuit, and semiconductor laser COS chip connects with being connected circuit gold thread
Connect.
In the present invention, semiconductor laser COS chip can connect with being connected circuit gold thread such that it is able to preferably reduces
Electric energy loss in the line, also is able to preferably reduce the heat that circuit produces at work while saving the energy.
As preferably, being provided with temperature sensor at substrate, temperature sensor is for gathering semiconductor laser COS chip
Operating temperature corresponding generation temperature signal.
In the present invention, it is possible to temperature sensor is set at substrate such that it is able to detect semiconductor laser the most in real time
The operating temperature of device COS chip such that it is able to the real-time duty to laser array is adjusted, and preferably ensure that
Its job stability.
As preferably, substrate is located on a base, and base position is provided with electric interfaces, and electric interfaces includes for by connecting
Circuit is to the power supply interface of semiconductor laser COS chip power supply, and is used for reading the data-interface of temperature signal.
In the present invention, power supply interface can have multiple, and multiple semiconductor laser COS chip can corresponding power supply interface
Quantity be divided into many groups, the semiconductor laser chip of each of which group all can connected in series or in parallel after from different power supplies
Interface is attached, and is enable to by being powered different power supply interfaces, and makes the laser instrument battle array of the present invention
Row can be operated with different states, and then can relatively be flexibly applied in actual production.
In the present invention, multiple semiconductor laser COS chips can also carry out array in centrosymmetric mode, so that
The output beam obtaining laser array can preferably present round symmetry characteristic, and then can be substantially reduced the difficulty of follow-up shaping
Degree.
In the present invention, multiple semiconductor laser COS chips can include the trichroism semiconductor laser of multiple red, green, blue
COS chip, so that semiconductor laser array can simultaneously or timesharing output RGB laser, through simple even light
System can preferably obtain and to be applicable to display or the white light source of illumination, it is to avoid complicated combined optical system.
As preferably, optical module and beam shaping lens is turned to all to use glue to be bonded in corresponding position.
As preferably, optical module is turned to be configured with layer of metal layer with the junction of substrate to be welded on the corresponding position of substrate
Put place.
In the present invention, turn to optical module and beam shaping lens can carry out surface metalation and be weldingly fixed on corresponding positions
Put place such that it is able to be the most firmly connected with substrate.
Accompanying drawing explanation
Fig. 1 is multiple semiconductor laser COS chips and the connection diagram of substrate in embodiment 1；
Fig. 2 is single semiconductor laser COS chip and the connection diagram of substrate in embodiment 1.
Detailed description of the invention
For further appreciating that present disclosure, the present invention is described in detail in conjunction with the accompanying drawings and embodiments.It is to be understood that
, embodiment be only the present invention explained and and non-limiting.
Embodiment 1
As shown in Figure 1 and Figure 2, the present embodiment provides a kind of COS semiconductor laser array.It includes being located at base
Substrate 110 in (not shown), substrate 110 is gone into battle and is shown multiple semiconductor laser COS chip 120, arbitrary quasiconductor
It is equipped with one at laser instrument COS chip 120 and turns to optical module 130 and a beam shaping lens 140.Wherein, optics group is turned to
The laser beam that part 130 is launched for corresponding semiconductor laser COS chip 120 is parallel to substrate 110 turns to 90 ° of outputs, light
The bundle shaping lens 140 laser beam after turning to optical module 130 to turn to correspondence collimates.It addition, substrate 110 is internal
Being equipped with connection circuit (not shown), semiconductor laser COS chip 120 connects with being connected circuit gold thread；At substrate 110
Being provided with temperature sensor, temperature sensor is for gathering the operating temperature of semiconductor laser COS chip 120 corresponding generation temperature
Degree signal；Base position is additionally provided with electric interfaces (not shown), and electric interfaces includes for by connecting circuit to quasiconductor
The power supply interface of laser instrument COS chip 120 power supply, and for reading the data-interface of temperature signal.
In the present embodiment, the mode that semiconductor laser COS chip 120 uses eutectic to weld is connected with substrate 110, turns to
Optical module 130 uses polarization splitting prism, beam shaping lens 140 to use micro ball lens.Turn to optical module 130 and light
Bundle shaping lens 140 all uses glue to be bonded in the corresponding installed position of substrate 110.
In the present embodiment, multiple semiconductor laser COS chips 120 are same color chip and with rectangular mode array.
It addition, the spacing between arbitrary neighborhood semiconductor laser COS chip 120 can be an any value in 2～5mm,
The present embodiment is 2.5mm such that it is able to obtain preferably heat dispersion and the volume of laser array can be taken into account simultaneously.
Embodiment 2
The present embodiment also provides a kind of laser array, and it is with the difference of embodiment 1: turn to optical module
130 use 45 ° of dielectric mirrors, and beam shaping lens 140 uses GRIN Lens；Turn to optical module 130 and substrate 110
Junction is configured with layer of metal layer to be welded on substrate 110 corresponding position.
Embodiment 3
The present embodiment also provides a kind of laser array, and it is with the difference of embodiment 1: multiple quasiconductors swash
Light device COS chip 120 includes red, green, blue three color chip, and carries out array in the way of circle is symmetrical；Wherein, the core of different colours
Sheet is the most independently-powered.
It addition, in the present embodiment, the power of three color chips is than for 1:0.86:0.52, thus can obtain when working at the same time
Obtain the white laser bundle of preferable colour temperature.
Below being schematically described the present invention and embodiment thereof, this description does not has restricted, institute in accompanying drawing
Show is also one of embodiments of the present invention, and actual structure is not limited thereto.So, if the common skill of this area
Art personnel enlightened by it, in the case of without departing from the invention objective, without creatively designing and this technical scheme
Similar frame mode and embodiment, all should belong to protection scope of the present invention.
Claims (9)
1.COS semiconductor laser array, it is characterised in that: include that substrate (110), substrate (110) are gone into battle and shown at least one
Semiconductor laser COS chip (120), arbitrary semiconductor laser COS chip (120) place is equipped with one and turns to optical module
(130) and one beam shaping lens (140)；Turn to optical module (130) for by correspondence semiconductor laser COS chip
(120) being parallel to the laser beam that substrate (110) launches and turn to 90 ° of outputs, beam shaping lens (140) is for turning to light to correspondence
Learn the laser beam after assembly (130) turns to collimate.
Laser array the most according to claim 1, it is characterised in that: turn to optical module (130) to use polarization spectro
Prism or 45 ° of dielectric mirrors.
Laser array the most according to claim 1, it is characterised in that: beam shaping lens (140) uses tiny balls saturating
Mirror or GRIN Lens.
Laser array the most according to claim 1, it is characterised in that: semiconductor laser COS chip (120) uses altogether
The mode of brilliant welding is connected with substrate (110).
Laser array the most according to claim 4, it is characterised in that: substrate (110) laid inside has connection circuit, and half
Conductor laser COS chip (120) connects with being connected circuit gold thread.
Laser array the most according to claim 5, it is characterised in that: substrate (110) place is provided with temperature sensor, temperature
Sensor is used for gathering the operating temperature of semiconductor laser COS chip (120) corresponding generation temperature signal.
Laser array the most according to claim 6, it is characterised in that: substrate (110) is located on a base, and base position sets
Have electric interfaces, electric interfaces to include for the power supply powered to semiconductor laser COS chip (120) by connecting circuit to connect
Mouthful, and for reading the data-interface of temperature signal.
8. according to described laser array arbitrary in claim 1～7, it is characterised in that: turn to optical module (130) and light
Bundle shaping lens (140) all uses glue to be bonded in corresponding position.
Laser array the most according to claim 8, it is characterised in that: turn to optical module (130) and substrate (110)
Junction is configured with layer of metal layer to be welded on substrate (110) corresponding position.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2015106313748 | 2015-09-29 | ||
| CN201510631374.8A CN105186283A (en) | 2015-09-29 | 2015-09-29 | Cos semiconductor laser array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205724367U true CN205724367U (en) | 2016-11-23 |
Family
ID=54908217
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510631374.8A Withdrawn CN105186283A (en) | 2015-09-29 | 2015-09-29 | Cos semiconductor laser array |
| CN201610455137.5A Pending CN106558832A (en) | 2015-09-29 | 2016-06-21 | COS semiconductor laser arrays |
| CN201620619635.4U Expired - Fee Related CN205724367U (en) | 2015-09-29 | 2016-06-21 | Cos semiconductor laser array |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510631374.8A Withdrawn CN105186283A (en) | 2015-09-29 | 2015-09-29 | Cos semiconductor laser array |
| CN201610455137.5A Pending CN106558832A (en) | 2015-09-29 | 2016-06-21 | COS semiconductor laser arrays |
Country Status (1)
| Country | Link |
|---|---|
| CN (3) | CN105186283A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106558832A (en) * | 2015-09-29 | 2017-04-05 | 北京为世联合科技有限公司 | COS semiconductor laser arrays |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019062055A1 (en) | 2017-09-26 | 2019-04-04 | 青岛海信激光显示股份有限公司 | Laser array, laser light source, and laser projector |
| CN109560455A (en) * | 2017-09-26 | 2019-04-02 | 青岛海信激光显示股份有限公司 | A kind of laser array |
| CN109560452A (en) * | 2017-09-26 | 2019-04-02 | 青岛海信激光显示股份有限公司 | A kind of laser array and laser light source |
| CN111146690B (en) * | 2020-01-06 | 2021-09-07 | 常州纵慧芯光半导体科技有限公司 | Laser module and preparation method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7733932B2 (en) * | 2008-03-28 | 2010-06-08 | Victor Faybishenko | Laser diode assemblies |
| US8432945B2 (en) * | 2010-09-30 | 2013-04-30 | Victor Faybishenko | Laser diode combiner modules |
| CN103368066B (en) * | 2013-07-29 | 2015-11-18 | 武汉锐科光纤激光技术股份有限公司 | A kind of ramp type multitube semiconductor laser coupling device and method |
| CN104007558B (en) * | 2014-05-07 | 2016-11-09 | 武汉锐科光纤激光器技术有限责任公司 | A kind of polarization of semiconductor laser beam merging apparatus and coupling process |
| CN105186283A (en) * | 2015-09-29 | 2015-12-23 | 北京为世联合科技有限公司 | Cos semiconductor laser array |
-
2015
- 2015-09-29 CN CN201510631374.8A patent/CN105186283A/en not_active Withdrawn
-
2016
- 2016-06-21 CN CN201610455137.5A patent/CN106558832A/en active Pending
- 2016-06-21 CN CN201620619635.4U patent/CN205724367U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106558832A (en) * | 2015-09-29 | 2017-04-05 | 北京为世联合科技有限公司 | COS semiconductor laser arrays |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105186283A (en) | 2015-12-23 |
| CN106558832A (en) | 2017-04-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161123 Termination date: 20200621 |