CN106558830A - White semiconductor laser array - Google Patents
White semiconductor laser array Download PDFInfo
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- CN106558830A CN106558830A CN201610455185.4A CN201610455185A CN106558830A CN 106558830 A CN106558830 A CN 106558830A CN 201610455185 A CN201610455185 A CN 201610455185A CN 106558830 A CN106558830 A CN 106558830A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 194
- 239000000758 substrate Substances 0.000 claims description 32
- 230000003287 optical effect Effects 0.000 claims description 27
- 230000005496 eutectics Effects 0.000 claims description 6
- 241000218202 Coptis Species 0.000 claims description 5
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 5
- 230000000399 orthopedic effect Effects 0.000 abstract description 3
- 238000007493 shaping process Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 10
- 230000002269 spontaneous effect Effects 0.000 description 8
- 238000010276 construction Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000005357 flat glass Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000011897 real-time detection Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 241001085205 Prenanthella exigua Species 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000016507 interphase Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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- 238000012536 packaging technology Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
Abstract
The present invention relates to semiconductor laser array technical field, and in particular to a kind of white semiconductor laser array.Which includes base, and the ridge structure of at least one ring-type is configured with base, and the central shaft of any two ridge structure overlaps；The side of arbitrary ridge structure is symmetrically provided with semiconductor laser chip, and semiconductor laser chip includes red light semiconductor laser chip, Green-emitting semiconductor laser chip, and blue-light semiconductor laser chip.The form that the present invention is encapsulated simultaneously by trichroism laser chip, can greatly simplify follow-up light path orthopedic systems.
Description
Technical field
The present invention relates to semiconductor laser array technical field, specifically, is related to a kind of white semiconductor
Laser array.
Background technology
Used by existing laser display and lighting field, visible light lasers light source mainly has semiconductor pumped Solid State Laser
Two kinds of device and semiconductor laser.As semiconductor laser power is constantly lifted, semiconductor pumped solid swashs
Laser speckle existing for light device is high, operating environment requirements are harsh, high cost the shortcomings of more highlight, therefore swash
The development trend of light source is increasingly intended to semiconductor laser.
At present, semiconductor laser packaged type mainly has single tube LD, Bar bar and semiconductor laser array
Three kinds of forms.Wherein, single tube LD light powers are relatively low, so that monomer underpower is made up by quantity
Shortcoming, but quantity increase while heat dissipation problem is highlighted；Bar bar packaged types, power are relative
It is higher, but with the brightness more and more higher shown with lighting requirement, the light power of Bar bars encapsulation still can not
It is enough preferably to meet practical application；Semiconductor laser array integrated dozens of can be sent out in the volume of very little
Optical chip, preferably can be formed tens of watts laser output, use it is very convenient, thus with compared with
For wide in range.But, above-mentioned three kinds of packaged types are the mode that single colored chip is individually encapsulated, because quasiconductor swashs
Light device is frequently encountered the occasion for needing trichroism laser to export simultaneously, so as to just relate to when for display field
And to three not homochromy laser arrays are carried out with the problem of closing light, and can be using to complexity during this
Beam shaping closing light optical system, is inconvenient.On the other hand, existing semiconductor laser array is most
Using rectanglar arrangement mode, although the packaging technology of rectanglar arrangement mode is simple, circuit board arrangement is succinct, but
Be, due to all semiconductor laser chips fast axle in one direction, therefore in later stage shaping just not
It is evitable to need to use cylindrical lenses, so as to increased the complexity of shaping light path so that subsequent treatment into
Originally it is difficult to reduce.
In addition, though with scientific and technological progress, semiconductor laser technology becomes better and approaching perfection day by day, but semiconductor laser
Device is difficult to breakthrough bottleneck on miniaturization, the direction of densification application all the time, traces it to its cause, it may be that existing
The array way adopted by semiconductor laser array can not be brought for integrated laser chip and preferably work
Stability.
Apart from the above, in semiconductor laser concrete application is such as field of projector, using laser light
It is required to carry out dodging to which during source, to obtain the uniform given shape hot spot of light distribution, from
And can uniformly irradiate imager chip.Existing dodging mainly has compound eye lens group technology and even light pipe
Technology, wherein, compound eye lens group technology needs larger collimated incident hot spot, therefore LASER Light Source is with this even light
Technology does not have advantage；And even light pipe technology is divided into two class of solid light pipe and hollow light pipe, they respectively have pluses and minuses.
As existing semiconductor laser has above-mentioned various defects, so as to cause even light pipe to match with LASER Light Source
When need to carry out LASER Light Source the operations such as shaping, incident angle adjustment, it is therefore desirable to specially with a set of shaping,
Angular adjustment apparatus, not only complex operation and relatively costly.
The content of the invention
In order to the problem for overcoming existing laser array later stage shaping complicated, the invention provides a kind of circle
Asymmetric semiconductor laser array.
Round asymmetric semiconductor laser array of the invention, which includes base, is configured with least on base
The ridge structure of one ring-type, at least one ridge structure have same central shaft；Arbitrary ridge structure
Side be symmetrically provided with semiconductor laser chip.
In the round asymmetric semiconductor laser array of the present invention, can be swashed by being symmetrically provided with quasiconductor
The mode of optical chip so that the output beam of laser array can preferably be presented round symmetry characteristic, can
Save the cylindrical lenses adopted by follow-up shaping so that assembly technology is greatly simplified, manufacturing cost greatly
Reduce.The present invention has broken the thinking set of traditional rectangular arrangement, can be by being swashed using such as cos quasiconductors
Optical chip carries out justifying symmetric arrays so that although single luminescence chip also maintains XY directional divergence angular differences,
But array Integral luminous mode shows as justifying symmetric mode, so that later stage shaping light path is greatly succinct.
In addition, semiconductor laser chip can be arranged on base by multiple ridge structures of concentric circles,
And the multiple semiconductor laser chips arranged on each ridge structure can centered on symmetrical arrangement, from
And preferably so that the laser beam parameter after arrangement is symmetrical in all directions.
Preferably, chassis interior is provided with temperature sensor, temperature sensor is used to gather semiconductor laser core
The operating temperature correspondence generation temperature signal of piece.
In the round asymmetric semiconductor laser array of the present invention, temperature sensor can be set in chassis interior,
So as to the operating temperature of preferably real-time detection semiconductor laser chip such that it is able in real time to laser
The working condition of device array is adjusted, and preferably ensure that its job stability.
Preferably, base position is provided with electric interfaces, electric interfaces are included for supplying to semiconductor laser chip
The power supply interface of electricity, and for reading the data-interface of temperature signal.
In the round asymmetric semiconductor laser array of the present invention, power supply interface can have multiple, and multiple partly lead
Volumetric laser chip can correspond to the quantity of power supply interface and be divided into multigroup, the semiconductor laser core of each of which group
Piece can it is connected in series or in parallel after be attached from different power supply interfaces, be enable to by right
Different power supply interfaces are powered, and the laser array of the present invention is carried out with different states
Work, and then relatively can be flexibly applied in actual production.
Preferably, can be provided with base being for example used for the substrate for fixing ridge structure, it is provided with the inside of substrate
For disposing the circuit board of semiconductor laser chip.
In the round asymmetric semiconductor laser array of the present invention, a laminar substrate just can be set on circuit boards,
The setting of substrate enables ridge structure to be preferably fixed on base, and being capable of preferably isolation circuit
The semiconductor laser chip arranged on plate and circuit such that it is able to play preferably protective effect.
Preferably, semiconductor laser chip is welded with substrate eutectic.
In the round asymmetric semiconductor laser array of the present invention, semiconductor laser chip can be welded with substrate eutectic
Connect such that it is able to preferably to semiconductor laser chip, it is ensured that the job stability of semiconductor laser chip.
Preferably, semiconductor laser chip is connected with circuit board gold thread.
In the round asymmetric semiconductor laser array of the present invention, semiconductor laser chip can be with circuit board gold thread
Connection, so that semiconductor laser chip preferably can be electrically connected with circuit board.
Preferably, the spacing between arbitrary neighborhood semiconductor laser chip is 2～5mm.
In the round asymmetric semiconductor laser array of the present invention, the spacing between arbitrary neighborhood semiconductor laser chip
Can be 2～5mm, this set while being obtained in that preferable light intensity, preferably reducing base volume, also
The interference problem and heat dissipation problem between adjacent semiconductor laser chip can preferably be solved.
Preferably, arbitrary ridge structure is configured to centrosymmetric polygon.
In the round asymmetric semiconductor laser array of the present invention, ridge structure can be configured to centrosymmetric many
Side shape, so that one or more can be arranged partly preferably according to demand on the daily side of ridge structure
Conductor Laser chip, so as to preferably simplify assembly technology.
Preferably, corresponding semiconductor laser chip is arranged at the outside of correspondence ridge structure.
In the round asymmetric semiconductor laser array of the present invention, semiconductor laser chip can be located at ridge structure
Outside so that the semiconductor laser chip on each ridge structure preferably can be isolated, it is ensured that
The stability of work.
In the round asymmetric semiconductor laser array of the present invention, by the ridge structure using concentric annular half-and-half
Conductor Laser chip is supported so that while semiconductor laser chip is easily installed, and also allows for leading to
Cross the number of rings of adjustment ridge structure and overall power is preferably adjusted.
In order to the problem for overcoming existing laser array later stage closing light, shaping complicated, the present invention is also provided
A kind of white semiconductor laser array.
White semiconductor laser array of the invention, which includes base, and at least one is configured with base
The ridge structure of individual ring-type, at least one ridge structure have same central shaft；Arbitrary ridge structure
Side is symmetrically provided with semiconductor laser chip, and semiconductor laser chip includes red light semiconductor laser
Chip, Green-emitting semiconductor laser chip, and blue-light semiconductor laser chip.
The present invention white semiconductor laser array in, can by an array according to certain power
Ratio encapsulates redgreenblue semiconductor laser chip simultaneously so that a semiconductor laser array can be same
When or timesharing output RGB laser, preferably can obtain suitable for showing or shining through simple even photosystem
Bright white light source, it is to avoid complicated shaping combined optical system so that assembly technology is greatly simplified.
In addition, the arrangement mode of redgreenblue semiconductor laser chip can be symmetrical using any of the above-described kind of circle
The arrangement construction of semiconductor laser array such that it is able to bring identical technique effect.
Preferably, chassis interior is provided with temperature sensor, temperature sensor is used to gather semiconductor laser core
The operating temperature correspondence generation temperature signal of piece.
In the white semiconductor laser array of the present invention, temperature sensor can be set in chassis interior, from
And it is capable of the operating temperature of preferably real-time detection semiconductor laser chip such that it is able in real time to laser instrument
The working condition of array is adjusted, and preferably ensure that its job stability.
Preferably, base position is provided with electric interfaces, electric interfaces are included for supplying to semiconductor laser chip
The power supply interface of electricity, and for reading the data-interface of temperature signal.
Preferably, red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor swash
Optical chip is respectively adopted different power supply interfaces and individually powers.
In the white semiconductor laser array of the present invention, power supply interface can have multiple, and semiconductor laser
Chip can correspond to power supply interface quantity and be divided into it is multigroup, wherein, the semiconductor laser core in arbitrary group
Piece can be the semiconductor laser chip of same color such that it is able to by supplying to different power supply interfaces
Electricity, and preferably obtain different laser.
Preferably, being provided with base for fixing the substrate of ridge structure, it is provided with the inside of substrate for disposing
The circuit board of semiconductor laser chip.
Preferably, semiconductor laser chip is welded with substrate eutectic.
Preferably, semiconductor laser chip is connected with circuit board gold thread.
Preferably, the spacing between arbitrary neighborhood semiconductor laser chip is 2～5mm.
Preferably, red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor
The quantity ratio of laser chip is 1:0.86:0.52.
In the white semiconductor laser array of the present invention, red light semiconductor laser chip, Green-emitting semiconductor swash
The power ratio of optical chip and blue-light semiconductor laser chip is preferably 1:0.86:0.52, this kind of power ratio makes
Which is obtained while possessing preferably heat dispersion, also so which is obtained in that preferable colour temperature in cooperation
White laser.
The white semiconductor laser array of the present invention, has broken the thinking set of single colored chip encapsulation, can
By way of adopting for example trichroism COS chips and loading in mixture encapsulation, a laser array is reached while or dividing
When export redgreenblue laser ability, eliminate follow-up shaping combined optical system, structure is greatly simplified.
When carrying out chip package, the trichroism laser chip of encapsulation that can be alternate, the quantity of RGB chip can be according to
Required white light colour temperature is different and adopt different ratios.The white semiconductor laser array of the present invention directly should
During for projection light machine, shaping need not be carried out and close beam, be directly entered even light path, greatly simplify light path
Structure.
In addition, in the white semiconductor laser array of the present invention, all semiconductor laser chips can also be adopted
It is packaged with modes such as example existing rectangular package array, butterfly array of packages, TO encapsulation.
In order to overcome existing laser array for the problem of complicated orthopedic systems is needed during even light pipe, this
Invention additionally provides a kind of even light pipe of spontaneous ray laser.
The even light pipe of spontaneous ray laser of the invention, which includes the even light connected as one by connecting bracket
Tube body and array laser, array laser include base, and the nearly even smooth tube body side structure of base has at least
The ridge structure of one ring-type, at least one ridge structure have same central shaft, arbitrary ridge structure
Side be symmetrically provided with semiconductor laser chip, semiconductor laser chip includes that red light semiconductor swashs
Optical chip, Green-emitting semiconductor laser chip and blue-light semiconductor laser chip.
In the even light pipe of spontaneous ray laser of the present invention, its array laser can be using any of the above-described kind of white light half
Conductor laser array, and corresponding technique effect can be brought.Meanwhile, also in that array laser is adopted
With the structure of above-mentioned any one white semiconductor laser array so that defeated laser need not carry out the conjunction of complexity
Light, shaping such that it is able to be directly entered in even light pipe, realize dodging.So as to preferably save
Regulation apparatus for shaping between array laser and even light pipe, so as to preferably simplify whole projecting light path.
Preferably, chassis interior is provided with temperature sensor, temperature sensor is used to gather semiconductor laser core
The operating temperature correspondence generation temperature signal of piece.
Preferably, base position is provided with electric interfaces, electric interfaces are included for supplying to semiconductor laser chip
The power supply interface of electricity.
Preferably, red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor swash
Optical chip is respectively adopted different power supply interfaces and individually powers.
In the even light pipe of spontaneous ray laser of the present invention, the semiconductor laser chip of each color can be divided into many
Group is simultaneously individually powered such that it is able to preferably obtain the white light of different-colour.
Preferably, electric interfaces are also included for reading the data-interface of temperature signal.
Preferably, being provided with base for fixing the substrate of ridge structure, it is provided with the inside of substrate for disposing
The circuit board of semiconductor laser chip.
Preferably, semiconductor laser chip and the welding of substrate eutectic, semiconductor laser chip and circuit sheet metal
Line connects.
Preferably, red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor swash
The power ratio of optical chip is 1:0.86:0.52.
Preferably, the spacing between arbitrary neighborhood semiconductor laser chip is 2～5mm.
In the even light pipe of spontaneous ray laser of the present invention, the spacing between arbitrary neighborhood semiconductor laser chip can be
2～5mm, this set is while being obtained in that preferable light intensity, preferably reducing base volume, additionally it is possible to compared with
The interference problem and heat dissipation problem between adjacent semiconductor laser chip is solved goodly.
In the even light pipe of spontaneous ray laser of the present invention, even smooth tube body can be designed as sky according to real needs
Heart light pipe or solid light pipe, and, the exiting surface of even smooth tube body different according to the dimension scale of projection chip
Can be designed as 4:3 and 16:9 two kinds of ratios, while array laser also can be according to light pipe 4:3 and 16:9
Carry out adaptable arrangement encapsulation such that it is able to preferably ensure the preferable optical uniformity of the output light of even light pipe.
In order to overcoming existing laser array volume larger and being unfavorable for optical element standardization, miniaturization
The problems such as development, present invention also offers a kind of integrated laser chip.
Integrated laser chip of the invention, which includes the housing for being configured to frame-shaped, at housing lower ending opening
Dielectric substrate is provided with, transparent output window at housing upper end open, is provided with；Connection is laid with dielectric substrate
Circuit, on dielectric substrate, square array has quasiconductor of be connected with the connection line and light-emitting area just to output window
Chip of laser；Pin is led at dielectric substrate also, pin is used for by connection line to semiconductor laser
Device chip power supply.
In the integrated laser chip of the present invention, multiple semiconductor laser chips can be integrated in a chip
It is interior, so as to preferably realize the microminaturization of Laser Devices, it is provided simultaneously with preferably reliability so that swash
The standardization level of optical chip is preferably lifted.By the integrated laser chip of the present invention so that laser
Chip can be as IC chip, as the optical element of standard, and optical engineer can be as
Electronics Engineer is the same, the integrated laser chip needed for selecting from Standard-part Database's, is directly inserted in special
PCB on use, so as to greatly advance the standardized development of optical element.
In the integrated laser chip of the present invention, dielectric substrate can be adopted possesses good heat radiating ability and insulation energy
The material of power is made such that it is able to preferably lift its job stability.
Preferably, being provided with above dielectric substrate for supporting the supporting construction of semiconductor laser chip.
Preferably, supporting construction includes the ridge structure of at least one ring-type, at least one ridge knot
The side that structure has same central shaft, arbitrary ridge structure is symmetrically provided with semiconductor laser chip.
In the integrated laser chip of the present invention, its supporting construction can adopt above-mentioned any one concentric annular
Ridge structure such that it is able to bring corresponding technique effect, and semiconductor laser chip can adopt center pair
The mode of title is arranged such that it is able to which acquisition possesses the laser of preferably circle symmetry characteristic, and then can save
Complicated light path orthopedic systems, reduce its manufacture difficulty, obtain less volume.
Preferably, the material of output window is glass or high light-passing plastic material.
In the integrated laser chip of the present invention, the material of output window can be such as glass or high light-passing plastic
Material, so that laser preferably can be exported.
Preferably, the material of output window is the glass that flat glass or surface Jing binary opticals are processed.
In the integrated laser chip of the present invention, the material of output window can be flat glass or surface Jing binary
The glass of optical treatment, so that laser preferably can be exported.
Preferably, semiconductor laser chip includes red light semiconductor laser chip, Green-emitting semiconductor laser core
Piece and blue-light semiconductor laser chip.
The present invention integrated laser chip in, semiconductor laser chip can include red light semiconductor laser chip,
Green-emitting semiconductor laser chip and blue-light semiconductor laser chip such that it is able to preferably simultaneously or timesharing is defeated
Go out different laser so that its range of application is more extensive.
Preferably, red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor swash
Optical chip is respectively adopted different pins and individually powers.
Preferably, red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor swash
The power ratio of optical chip is 1:0.86:0.52.
The present invention integrated laser chip in, red light semiconductor laser chip, Green-emitting semiconductor laser chip,
And the power ratio of blue-light semiconductor laser chip is preferably 1:0.86:0.52, this kind of power ratio causes which in tool
While standby preferably heat dispersion, also so which is obtained in that in cooperation the white of preferable colour temperature swashs
Light.
In the integrated laser chip of the present invention, protection circuit at dielectric substrate, can also be encapsulated into such that it is able to
Preferably noise spectra of semiconductor lasers chip is protected.And package casing can be circle shell-type, flat or double
Arrange the various ways such as direct insertion.
Description of the drawings
Fig. 1 is the schematic diagram of circle asymmetric semiconductor laser array in embodiment 1；
Fig. 2 is the schematic diagram of white semiconductor laser array in embodiment 3；
Schematic diagrams of the Fig. 3 for the even light pipe of spontaneous ray laser in embodiment 4；
Fig. 4 is the schematic diagram of integrated laser chip in embodiment 5；
Fig. 5 bows to schematic diagram for Fig. 4's；
Fig. 6 cuts open schematic diagram for the perpendicular of Fig. 4.
Specific embodiment
To further appreciate that present disclosure, the present invention is described in detail in conjunction with the accompanying drawings and embodiments.Should
When being understood by, embodiment be only the present invention is explained and and it is non-limiting.
Embodiment 1
As shown in figure 1, present embodiments providing a kind of round asymmetric semiconductor laser array, which includes base
110.Wherein, the ridge structure 150 of multiple ring-types, any two ridge structure 150 are configured with base 110
Central shaft overlap；The side of arbitrary ridge structure 150 is symmetrically provided with semiconductor laser chip.
In the present embodiment, it is provided with base 110 for fixing the substrate 120 of ridge structure 150, substrate 120
Inner side is provided with for disposing the circuit board of semiconductor laser chip.Semiconductor laser chip and 120 eutectic of substrate
Welding, semiconductor laser chip are connected with circuit board gold thread.With setting that substrate 120 is contacted inside base 110
There is temperature sensor, the temperature sensor in the present embodiment adopts thermocouple temperature sensor, temperature sensing
Device is used for the operating temperature for gathering semiconductor laser chip and correspondence produces temperature signal.
In addition, electric interfaces 140 are additionally provided with base 110, electric interfaces 140 include what is be connected with circuit board
For the power supply interface powered to semiconductor laser chip, and for reading the data-interface of temperature signal.
In the present embodiment, power supply interface is provided with multiple, and different power supply interfaces is corresponded to respectively to located at different ridge knots
All semiconductor laser chips on structure 150 are powered, it is achieved thereby that to half on ridge structure 150
Conductor Laser chip is individually powered, so can preferably to the laser array in the present embodiment send out
Luminous power is adjusted.
In the present embodiment, the ridge structure 150 of innermost layer is configured to column, due to innermost layer ridge structure 150
Size it is less, be configured to column and can save manufacturing cost on the contrary, and be easy to assembling.It should be noted that
Although 3 ridge structures 150 for being configured to concentric ring are illustrate only in the accompanying drawing of the present embodiment (Fig. 1),
It is in actual production, depending on the quantity of ridge structure 150 should show power demand.
In the present embodiment, innermost layer ridge structure 150 is configured to centrosymmetric right prism, and remaining ridge is tied
Structure 150 is configured to centrosymmetric polygon, and the spacing of arbitrary neighborhood ridge structure 150 is equal.
Wherein, semiconductor laser chip is located in the outer side edges of ridge structure 150, and arbitrary neighborhood quasiconductor swashs
Spacing between optical chip can be in 2～5mm any value (being 2.5mm in the present embodiment).
Embodiment 2
A kind of white semiconductor laser array, its difference with embodiment 1 are provided in the present embodiment
It is：Semiconductor laser chip includes red light semiconductor laser chip 131, Green-emitting semiconductor laser chip 132,
And the quasiconductor of setting same color swashs on blue-light semiconductor laser chip 133, and same ridge structure 150
Optical chip.
In addition, in the present embodiment, red light semiconductor laser chip 131, Green-emitting semiconductor laser chip 132,
And the power ratio of blue-light semiconductor laser chip 133 is 1:0.86:0.52.
Embodiment 3
As shown in Fig. 2 the present embodiment also provide a kind of white semiconductor laser array its with embodiment 2
Difference be：The arrangement of semiconductor laser chip rectangular shape, and ridge structure 150 include array into
Multiple rectangular blocks of rectangle.
In addition, in the present embodiment, red light semiconductor laser chip 131, Green-emitting semiconductor laser chip 132,
And 133 interphase distribution of blue-light semiconductor laser chip.
Embodiment 4
As shown in figure 3, present embodiments providing a kind of even light pipe of spontaneous ray laser, which is included by connection
Even smooth tube body and array laser that frame is connected as one.
Laser array during array laser in the present embodiment can adopt embodiment 1 or in embodiment 2.
The integrally constructed tubulose of connecting bracket in the present embodiment, and including the first connection being connected with even smooth tube body
Portion and the second connecting portion being connected with array laser, first connecting portion are configured to and even smooth tube body junction
The corresponding channel-shaped of gabarit, second connecting portion are configured to channel-shaped corresponding with array laser junction gabarit.
Embodiment 5
As shown in Fig. 4, Fig. 5, Fig. 6, a kind of integrated laser chip is present embodiments provided, which includes construction
Into the housing 310 of frame-shaped.Wherein, dielectric substrate 320 is provided with 310 lower ending opening of housing, on housing 310
Transparent output window 350 is provided with end opening；Connection line, dielectric substrate are laid with dielectric substrate 320
On 320, square array has semiconductor laser core of be connected with the connection line and light-emitting area just to output window 350
Piece 340；Pin 360 led at dielectric substrate 320 also, pin 360 is used for by connection line to partly leading
Body laser chip 340 is powered.
In the present embodiment, it is provided with above dielectric substrate 320 for supporting propping up for semiconductor laser chip 340
Support structure 330, supporting construction 330 are configured to the straight quadrangular shape positioned at 320 center of dielectric substrate, straight four rib
The side of column is evenly equipped with multiple semiconductor laser chips 340.
In the present embodiment, at 310 upper end open of housing, step groove is configured with, so that output window 350
Can be preferably embedded at 310 upper end open of housing.In addition, the material of output window 350 is flat glass
Material.
Embodiment 6
A kind of integrated laser chip is also provided in the present embodiment, which with the difference of embodiment 5 is：
Ridge structure 150 of the supporting construction 330 using the multiple ring-types in embodiment 2, and semiconductor laser chip
340 species and same as Example 2 with 150 connected mode of ridge structure of multiple ring-types.
In addition, in the present embodiment, the material of output window 350 is high light-passing plastic material.
Embodiment 7
A kind of integrated laser chip is also provided in the present embodiment, which with the difference of embodiment 6 is：
The material of output window 350 is the glass material that surface Jing binary opticals are processed.
Below schematically the present invention and embodiments thereof are described, the description does not have restricted, attached
Shown in figure is also one of embodiments of the present invention, and actual structure is not limited thereto.So,
If one of ordinary skill in the art is enlightened by which, in the case of without departing from the invention objective, no
Jing creatively designs the frame mode similar to the technical scheme and embodiment, all should belong to the present invention's
Protection domain.
Claims (9)
1. white semiconductor laser array, it is characterised in that：Including base (110), base (110)
On be configured with the ridge structure (150) of at least one ring-type；The equal center in side of arbitrary ridge structure (150)
Semiconductor laser chip is provided with symmetrically, semiconductor laser chip includes red light semiconductor laser chip (131),
Green-emitting semiconductor laser chip (132), and blue-light semiconductor laser chip (133).
2. white semiconductor laser array according to claim 1, it is characterised in that：Base (110)
Inside is provided with temperature sensor, and temperature sensor is used for operating temperature the correspondence for gathering semiconductor laser chip
Produce temperature signal.
3. white semiconductor laser array according to claim 2, it is characterised in that：Base (110)
Place is provided with electric interfaces (140), and electric interfaces (140) include the confession for powering to semiconductor laser chip
Electrical interface, and for reading the data-interface of temperature signal.
4. white semiconductor laser array according to claim 3, it is characterised in that：HONGGUANG is partly led
Volumetric laser chip (131), Green-emitting semiconductor laser chip (132) and blue-light semiconductor laser chip (133)
Different power supply interfaces are respectively adopted individually to power.
5. white semiconductor laser array according to claim 1, it is characterised in that：Base (110)
Inside it is provided with for fixing the substrate (120) of ridge structure (150), substrate is provided with for pacifying on the inside of (120)
Put the circuit board of semiconductor laser chip.
6. white semiconductor laser array according to claim 5, it is characterised in that：Quasiconductor swashs
Optical chip is welded with substrate (120) eutectic.
7. white semiconductor laser array according to claim 5, it is characterised in that：Quasiconductor swashs
Optical chip is connected with circuit board gold thread.
8. according to arbitrary described white semiconductor laser array in claim 1～7, it is characterised in that：
Spacing between arbitrary neighborhood semiconductor laser chip is 2～5mm.
9. according to arbitrary described white semiconductor laser array in claim 1～7, it is characterised in that：
Red light semiconductor laser chip (131), Green-emitting semiconductor laser chip (132), and blue-light semiconductor swash
The power ratio of optical chip (133) is 1:0.86:0.52.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2015106313729 | 2015-09-29 | ||
| CN201510631372.9A CN105186288A (en) | 2015-09-29 | 2015-09-29 | White semiconductor laser array |
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| Publication Number | Publication Date |
|---|---|
| CN106558830A true CN106558830A (en) | 2017-04-05 |
Family
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Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510631372.9A Withdrawn CN105186288A (en) | 2015-09-29 | 2015-09-29 | White semiconductor laser array |
| CN201610455185.4A Pending CN106558830A (en) | 2015-09-29 | 2016-06-21 | White semiconductor laser array |
| CN201620620267.5U Expired - Fee Related CN205863639U (en) | 2015-09-29 | 2016-06-21 | White semiconductor laser array |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510631372.9A Withdrawn CN105186288A (en) | 2015-09-29 | 2015-09-29 | White semiconductor laser array |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201620620267.5U Expired - Fee Related CN205863639U (en) | 2015-09-29 | 2016-06-21 | White semiconductor laser array |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106025792A (en) * | 2016-05-04 | 2016-10-12 | 中国工程物理研究院应用电子学研究所 | Device used for improving three primary colour laser white light source spectral component through spectral synthesis |
| US11658453B2 (en) * | 2018-01-29 | 2023-05-23 | Ronald LaComb | Concentric cylindrical circumferential laser |
| US11570411B2 (en) | 2019-01-10 | 2023-01-31 | Hisense Laser Display Co., Ltd. | Laser light source and laser projection device |
| EP3716418A4 (en) * | 2019-01-10 | 2021-12-08 | Hisense Laser Display Co., Ltd. | Laser light source and laser projecting device |
| US11592145B2 (en) | 2019-01-10 | 2023-02-28 | Hisense Laser Display Co., Ltd. | Laser light source and laser projection device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030174753A1 (en) * | 2002-01-17 | 2003-09-18 | Yoshifumi Yabuki | Semiconductor laser device |
| JP2009194101A (en) * | 2008-02-13 | 2009-08-27 | Fuji Xerox Co Ltd | Plane emission-type semiconductor laser device and laser therapy equipment using the same |
| CN101755300A (en) * | 2008-05-21 | 2010-06-23 | 松下电器产业株式会社 | Projector |
| CN102436073A (en) * | 2011-09-28 | 2012-05-02 | 中国科学院半导体研究所 | Projection lighting optical path based on semiconductor laser array |
-
2015
- 2015-09-29 CN CN201510631372.9A patent/CN105186288A/en not_active Withdrawn
-
2016
- 2016-06-21 CN CN201610455185.4A patent/CN106558830A/en active Pending
- 2016-06-21 CN CN201620620267.5U patent/CN205863639U/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030174753A1 (en) * | 2002-01-17 | 2003-09-18 | Yoshifumi Yabuki | Semiconductor laser device |
| JP2009194101A (en) * | 2008-02-13 | 2009-08-27 | Fuji Xerox Co Ltd | Plane emission-type semiconductor laser device and laser therapy equipment using the same |
| CN101755300A (en) * | 2008-05-21 | 2010-06-23 | 松下电器产业株式会社 | Projector |
| CN102436073A (en) * | 2011-09-28 | 2012-05-02 | 中国科学院半导体研究所 | Projection lighting optical path based on semiconductor laser array |
Also Published As
| Publication number | Publication date |
|---|---|
| CN205863639U (en) | 2017-01-04 |
| CN105186288A (en) | 2015-12-23 |
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