CN106558539A - The scribing of chip and manufacture method - Google Patents
The scribing of chip and manufacture method Download PDFInfo
- Publication number
- CN106558539A CN106558539A CN201510622042.3A CN201510622042A CN106558539A CN 106558539 A CN106558539 A CN 106558539A CN 201510622042 A CN201510622042 A CN 201510622042A CN 106558539 A CN106558539 A CN 106558539A
- Authority
- CN
- China
- Prior art keywords
- chip
- deep trouth
- dicing method
- scribing
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Abstract
The invention discloses a kind of scribing of chip and manufacture method.The dicing method is comprised the following steps：Chip is etched using plasma etch techniques, to form deep trouth；Oxide layer protecting film is formed in the side wall of deep trouth；The surface of deep trouth is completely covered using packing material；Contact etch technique and metallization process are carried out to chip；The packing material of oxide layer protecting film and deep trouth surface is etched open using photoetching technique and/or plasma etch techniques.The scribing of the chip of the present invention and manufacture method, are capable of the area of effectively utilizes silicon chip, reduce the area of scribe line, reduce the cost of scribing, chipping problem can also be prevented, the intensity of chip is improve, and is had good compatibility with traditional chip manufacturing process.
Description
Technical field
The present invention relates to the manufacture of chip, more particularly to a kind of scribing and the manufacture method of chip.
Background technology
As chip area reduces, tradition carries out the cost more and more higher of scribing using mechanical system.And
Traditional dicing technique needs wider scribe line, and this causes scribe line occupied area ratio on whole chip
Example is increasing, it is impossible to make full use of the area of silicon chip.Traditional dicing methods have been difficult to avoid that chipping is asked
Topic is present so that the intensity of chip decreases.
The content of the invention
The technical problem to be solved in the present invention is to overcome the scribing in prior art in chip manufacturing
The area of silicon chip can not be made full use of, and chipping problem is easily occurred and then is caused what Die strength was reduced
Defect, there is provided a kind of scribing of chip and manufacture method.
The present invention is solving above-mentioned technical problem by following technical proposals：
A kind of dicing method of chip, its feature are to comprise the following steps：
S1, chip is etched using plasma etch techniques, to form deep trouth；
S2, form oxide layer protecting film in the side wall of deep trouth；
S3, the surface of deep trouth is completely covered using packing material；
S4, contact etch technique and metallization process are carried out to chip；
S5, using photoetching technique and/or plasma etch techniques filling out oxide layer protecting film and deep trouth surface
Fill material etches to open.
Chip in the present invention includes the main part for not yet making chip, typically such as silicon chip.Ability
Field technique personnel should be appreciated that step S4The contact etch technique of middle enforcement and metallization process are cores
Common process in the piece course of processing, therefore its details is no longer described in detail in detail.
It is preferred that step S1The depth of the deep trouth that middle etching is formed is between 100 microns to 300 microns.
It is preferred that step S1The width of the deep trouth that middle etching is formed is generally between 1 micron to 10 microns.
It is preferred that step S2Middle employing thermal oxidation technology forms oxide layer protecting film.
It is preferred that step S2The thickness of the oxide layer protecting film of middle formation 0.05 micron to 0.2 micron it
Between.
It is preferred that packing material is using the weaker material of fillibility.These packing materials are included but is not limited to
The oxide formed using PECVD (i.e. plasma enhanced chemical vapor deposition method), is specifically included
The Si oxide formed using silane and other associated gas, using TEOS (tetraethyl orthosilicate) and its
The Si oxide that its associated gas is formed.
It is preferred that step S3Middle packing material covers the surface of deep trouth and forms oxide layer.
It is preferred that step S3Middle packing material covers the thickness on the surface of deep trouth at 0.5 micron to 5 microns
Between.
It is preferred that the dicing method is in step S5It is further comprising the steps of afterwards：
S6, carry out reduction process in chip back, chip is separated.
The thinner chip of multi-disc is formed after separation.
Present invention also offers a kind of manufacture method of chip, which adopts dicing method as above to carry out
Scribing.
On the basis of common sense in the field is met, above-mentioned each optimum condition, can combination in any, obtain final product this
Bright each preferred embodiments.
The present invention positive effect be：The scribing of the chip of the present invention and manufacture method, Neng Gouyou
Area of the effect using silicon chip, reduces the area of scribe line, reduces the cost of scribing, additionally it is possible to prevent
Chipping problem, improves the intensity of chip, and has good compatibility with traditional chip manufacturing process
Property.
Description of the drawings
Flow charts of the Fig. 1 for the dicing method of the chip of a preferred embodiment of the present invention.
Specific embodiment
The present invention is further illustrated below by the mode of embodiment, but is not therefore limited the present invention to
Among described scope of embodiments.
With reference to shown in Fig. 1, the dicing method of a preferred embodiment of the present invention is comprised the following steps：
S1, chip is etched using plasma etch techniques, to form deep trouth；
S2, the side wall using thermal oxidation technology in deep trouth form oxide layer protecting film；
S3, the surface of deep trouth is completely covered using packing material；
S4, contact etch technique and metallization process are carried out to chip；
S5, using photoetching technique and/or plasma etch techniques filling out oxide layer protecting film and deep trouth surface
Fill material etches to open；
S6, carry out reduction process in chip back, chip is separated.
In the present embodiment, step S1It is middle etching formed deep trouth depth 100 microns to 300 microns it
Between, width is generally between 1 micron to 10 microns.Step S2The thickness of the oxide layer protecting film of middle formation
Degree is between 0.05 micron to 0.2 micron.Step S3Middle packing material covers the thickness on the surface of deep trouth and exists
Between 0.5 micron to 5 microns.
Although the foregoing describing the specific embodiment of the present invention, those skilled in the art should manage
Solution, these are merely illustrative of, and protection scope of the present invention is defined by the appended claims.This
The technical staff in field, can be to these embodiment party on the premise of the principle and essence without departing substantially from the present invention
Formula makes various changes or modifications, but these changes and modification each fall within protection scope of the present invention.
Claims (10)
1. a kind of dicing method of chip, it is characterised in that comprise the following steps：
S1, chip is etched using plasma etch techniques, to form deep trouth；
S2, form oxide layer protecting film in the side wall of deep trouth；
S3, the surface of deep trouth is completely covered using packing material；
S4, contact etch technique and metallization process are implemented to chip；
S5, using photoetching technique and/or plasma etch techniques filling out oxide layer protecting film and deep trouth surface
Fill material etches to open.
2. dicing method as claimed in claim 1, it is characterised in that step S1What middle etching was formed
The depth of deep trouth is between 100 microns to 300 microns.
3. dicing method as claimed in claim 2, it is characterised in that step S1What middle etching was formed
The width of deep trouth is generally between 1 micron to 10 microns.
4. dicing method as claimed in claim 1, it is characterised in that step S2Middle employing thermal oxide
Technique forms oxide layer protecting film.
5. dicing method as claimed in claim 1, it is characterised in that step S2The oxidation of middle formation
The thickness of layer protecting film is between 0.05 micron to 0.2 micron.
6. dicing method as claimed in claim 1, it is characterised in that packing material is comprising using
The Si oxide that PECVD is formed.
7. dicing method as claimed in claim 1, it is characterised in that step S3Middle packing material covers
The surface of lid deep trouth forms oxide layer.
8. dicing method as claimed in claim 1, it is characterised in that step S3Middle packing material covers
The thickness on the surface of lid deep trouth is between 0.5 micron to 5 microns.
9. the dicing method as described in any one in claim 1-8, it is characterised in that the scribing
Method is in step S5It is further comprising the steps of afterwards：
S6, chip back implement reduction process, chip is separated.
10. a kind of manufacture method of chip, it is characterised in that using as any one in claim 1-9
Dicing method described in carries out scribing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510622042.3A CN106558539A (en) | 2015-09-25 | 2015-09-25 | The scribing of chip and manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510622042.3A CN106558539A (en) | 2015-09-25 | 2015-09-25 | The scribing of chip and manufacture method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106558539A true CN106558539A (en) | 2017-04-05 |
Family
ID=58415803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510622042.3A Pending CN106558539A (en) | 2015-09-25 | 2015-09-25 | The scribing of chip and manufacture method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106558539A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107369611A (en) * | 2017-07-11 | 2017-11-21 | 上海朕芯微电子科技有限公司 | Back side metallization technology is thinned in novel wafer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5863813A (en) * | 1997-08-20 | 1999-01-26 | Micron Communications, Inc. | Method of processing semiconductive material wafers and method of forming flip chips and semiconductor chips |
| CN1318206A (en) * | 1999-07-30 | 2001-10-17 | 日本板硝子株式会社 | Method of dicing semiconductor wafer into chips, and structure of groove formed in dicing area |
| CN102881783A (en) * | 2012-10-11 | 2013-01-16 | 施科特光电材料(昆山)有限公司 | Method for cutting light emitting diode chip through deep etching |
-
2015
- 2015-09-25 CN CN201510622042.3A patent/CN106558539A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5863813A (en) * | 1997-08-20 | 1999-01-26 | Micron Communications, Inc. | Method of processing semiconductive material wafers and method of forming flip chips and semiconductor chips |
| CN1318206A (en) * | 1999-07-30 | 2001-10-17 | 日本板硝子株式会社 | Method of dicing semiconductor wafer into chips, and structure of groove formed in dicing area |
| CN102881783A (en) * | 2012-10-11 | 2013-01-16 | 施科特光电材料(昆山)有限公司 | Method for cutting light emitting diode chip through deep etching |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107369611A (en) * | 2017-07-11 | 2017-11-21 | 上海朕芯微电子科技有限公司 | Back side metallization technology is thinned in novel wafer |
| CN107369611B (en) * | 2017-07-11 | 2020-03-17 | 上海朕芯微电子科技有限公司 | Novel wafer thinning back metallization process |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170405 |
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| WD01 | Invention patent application deemed withdrawn after publication |