CN106549116A - A kind of motherboard and preparation method thereof - Google Patents
A kind of motherboard and preparation method thereof Download PDFInfo
- Publication number
- CN106549116A CN106549116A CN201710060780.2A CN201710060780A CN106549116A CN 106549116 A CN106549116 A CN 106549116A CN 201710060780 A CN201710060780 A CN 201710060780A CN 106549116 A CN106549116 A CN 106549116A
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- mother substrate
- chock insulator
- insulator matter
- plastic box
- sealed plastic
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The embodiment of the invention discloses a kind of motherboard and preparation method thereof.The motherboard, including relative and the first mother substrate for putting and the second mother substrate；The motherboard includes multiple panel units；Each panel unit has viewing area, surrounds the sealed plastic box area of viewing area, and the sealed plastic box external zones for surrounding sealed plastic box area；Between the first mother substrate and the second mother substrate, the first chock insulator matter for buffering stress that least one set surrounds sealed plastic box area in sealed plastic box external zones, is provided with.So, in cutting technique subsequently to motherboard, mother substrate can be deformed upon, the first chock insulator matter for arranging enables to the deformation of cut mother substrate and relaxes, cushioning effect is played, the deformation quantity of mother substrate is reduced, so as to reduce effect of the stress to mother substrate during cutting, so as to reduce the generation of the oblique segmentation for deviateing former line of cut, product yield is improve.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of motherboard and preparation method thereof.
Background technology
At present, in the preparation technology of existing display floater, multiple display floaters are typically made on motherboard, then to mother
Plate carries out cutting and obtains multiple display floaters.With organic EL display panel (Organic Electro luminescent
Display, OLED) as a example by, in OLED techniques, motherboard after completing to encapsulate is as shown in figure 1, including relative and backboard 1 that put
With glass cover-plate 2, the viewing area 3 of each display floater is surrounded by sealed plastic box 4.After packaging technology is completed, motherboard can be carried out
Cutting, obtains multiple display floaters.Due to during being cut to glass cover-plate 2 along line of cut using scribing wheel 5,
Cut place stress concentration, if stress is excessive, the oblique segmentation or even fragmentation phenomenon of the former line of cut that is easier to shift cause yield to damage
Lose.
The content of the invention
The purpose of the embodiment of the present invention is to provide a kind of motherboard and preparation method thereof, for solving cutting motherboard
When, the problem of the oblique segmentation for being susceptible to offset former line of cut.
The purpose of the embodiment of the present invention is achieved through the following technical solutions：
A kind of motherboard, including relative and the first mother substrate for putting and the second mother substrate；The motherboard includes multiple panel lists
Unit；Wherein, each panel unit has viewing area, surrounds the sealed plastic box area of viewing area, and the envelope for surrounding the sealed plastic box area
Frame glue external zones；
Between first mother substrate and second mother substrate, in the sealed plastic box external zones, least one set is provided with
Surround first chock insulator matter for buffering stress in the sealed plastic box area；Wherein, the height of each first chock insulator matter is not high
In the distance between first mother substrate and second mother substrate.
It is preferred that the height of each first chock insulator matter is less than between first mother substrate and second mother substrate
Distance.
It is preferred that in per group of first chock insulator matter, each first chock insulator matter it is highly identical；It is described that difference is organized
First chock insulator matter is along the direction height reduction away from the sealed plastic box area.
It is preferred that first chock insulator matter of different groups is reduced along the directional spreding density away from the sealed plastic box area；
Specifically, the reduction of the distribution density shows as first chock insulator matter of different groups along the direction away from the sealed plastic box area
First chock insulator matter distributed number is more sparse, and/or first chock insulator matter of different groups is along away from the sealed plastic box area
Reduce on the first chock insulator matter cross-sectional area of direction.Specifically, distributed number more it is sparse show as described the first of different groups every
Underbed is reduced along in direction the first chock insulator matter quantity away from the sealed plastic box area, and/or first dottle pin of different groups
Thing is along direction the first chock insulator matter distribution spacing increase away from the sealed plastic box area.
It is preferred that the top of each first chock insulator matter is sphere.
It is preferred that the material of first chock insulator matter is elastomeric material.
It is preferred that multiple second chock insulator matters are provided with the viewing area；The height of second chock insulator matter is equal to described
The distance between first mother substrate and second mother substrate.
It is preferred that first chock insulator matter passes through a patterning processes shape using same material with second chock insulator matter
Into.
It is preferred that the altitude range of first chock insulator matter is the 50%～99.9% of the height of second chock insulator matter.
It is preferred that number of the quantity of first chock insulator matter arranged in unit area less than second chock insulator matter
Amount.
It is preferred that the quantity of first chock insulator matter arranged in unit area is the quantity of second chock insulator matter
35%～90%.
A kind of manufacture method of the motherboard as described in any of the above item, comprises the steps：
The figure of the viewing area of multiple panel units is formed on the first mother substrate；
Sealed plastic box external zones in sealed plastic box area formed least one set surround the sealed plastic box area for buffering stress
The figure of the first chock insulator matter；
First mother substrate is packaged using sealed plastic box with the second mother substrate；Wherein, each first chock insulator matter
The distance between first mother substrate and second mother substrate are not higher than highly.
It is preferred that the method also includes：
The figure of the second chock insulator matter is formed in the viewing area；
Sealed plastic box external zones in sealed plastic box area forms the figure that least one set surrounds first chock insulator matter in the sealed plastic box area
Shape, including：
Using a patterning processes, formed first described in least one set while the figure of second chock insulator matter is formed
The figure of chock insulator matter.
The embodiment of the present invention has the beneficial effect that：
In motherboard provided in an embodiment of the present invention and preparation method thereof, first is not higher than in sealed plastic box external zones rational height
First chock insulator matter of the distance between mother substrate and second mother substrate, in cutting technique subsequently to motherboard, mother substrate
Can deform upon, the first chock insulator matter of setting enables to the deformation mitigation of cut mother substrate, plays cushioning effect, reduces
The deformation quantity of mother substrate, so as to reducing effect of the stress to mother substrate during cutting, so as to reduce the oblique segmentation for deviateing former line of cut
Generation, improve product yield.
Description of the drawings
Fig. 1 is a kind of structural representation of motherboard of the prior art；
Fig. 2 is a kind of structural representation of motherboard provided in an embodiment of the present invention；
Fig. 3 a are the structural representation of another motherboard provided in an embodiment of the present invention；
The distribution schematic diagram of the first chock insulator matter when Fig. 3 b are vertical view provided in an embodiment of the present invention；
Fig. 4 is the structural representation of another kind of motherboard provided in an embodiment of the present invention；
Fig. 5 is a kind of manufacture method flow chart of motherboard provided in an embodiment of the present invention.
Specific embodiment
In order to solve above technical problem, the embodiment of the present invention provides a kind of motherboard and preparation method thereof.Wherein, the mother
Plate, including relative and the first mother substrate for putting and the second mother substrate；The motherboard includes panel unit；Wherein, each panel unit
Sealed plastic box area with viewing area, encirclement viewing area, and the sealed plastic box external zones for surrounding sealed plastic box area；In the first mother substrate and
Between second mother substrate, the first chock insulator matter that least one set surrounds sealed plastic box area in sealed plastic box external zones, is provided with.
In the embodiment of the present invention, be not higher than in sealed plastic box external zones rational height, preferably less than the first mother substrate and
First chock insulator matter of the distance between the second mother substrate, in cutting technique subsequently to motherboard, mother substrate can be deformed upon, if
The first chock insulator matter put enables to the deformation of cut mother substrate and relaxes, and plays cushioning effect, reduces the shape of mother substrate
Variable, so as to reduce effect of the stress to mother substrate during cutting, so as to reduce the generation of the oblique segmentation for deviateing former line of cut, improves
Product yield.
When being embodied as, the first chock insulator matter both can be arranged on the first mother substrate, it is also possible to be arranged on the second mother substrate
On.In enforcement, can arrange according to actual needs, for example, for OLED techniques, be arranged on backboard more preferably, technique is led to
With realizing simple and low cost.
In addition, the group number of first chock insulator matter in the encirclement sealed plastic box area arranged in sealed plastic box external zones is according to actual needs,
One group of above-mentioned first chock insulator matter can be both set, it is also possible to arrange multigroup above-mentioned first chock insulator matter, as long as buffering effect can be reached
Fruit.
With reference to the accompanying drawings and examples the scheme that the present invention is provided is illustrated in greater detail.Each film layer in accompanying drawing
Shape and thickness do not reflect actual proportions, and purpose is schematically illustrate present invention.
As shown in Fig. 2 the embodiment of the present invention provides a kind of motherboard, including relative and the first mother substrate 001 and second that put
Mother substrate 002；The motherboard includes multiple panel units；Wherein, each panel unit has viewing area 003, surrounds viewing area
Sealed plastic box area 004, and surround the sealed plastic box external zones 005 in sealed plastic box area.
As shown in Figure 3 a and Figure 3 b shows, the embodiment of the present invention provides another motherboard, including relative and the first mother substrate that put
001 and second mother substrate 002；The motherboard includes multiple panel units；Wherein, each panel unit has viewing area 003, surrounds
The sealed plastic box area 004 of viewing area, and surround the sealed plastic box external zones 005 in sealed plastic box area.
Between the first mother substrate and the second mother substrate, multigroup encirclement sealed plastic box area 004 in sealed plastic box external zones, is provided with
The first chock insulator matter 006 for buffering stress；Wherein, the height of each the first chock insulator matter is female less than the first mother substrate and second
The distance between substrate, as shown in Figure 3 a；Or the height of each the first chock insulator matter is between the first mother substrate and the second mother substrate
Distance, as shown in Figure 2；It is preferred that the height using each the first chock insulator matter is less than between the first mother substrate and the second mother substrate
Distance.
Illustrated as a example by two group of first chock insulator matter is set in sealed plastic box external zones in Fig. 2, Fig. 3 a and Fig. 3 b；
Fig. 3 b are the distribution schematic diagram of the first chock insulator matter when overlooking.
In the motherboard of above-described embodiment, panel unit therein can be by answering on the devices such as display, mobile phone, flat board
Rectangular display panel, or the special-shaped display floater applied on the devices such as intelligent watch, bracelet is applied, such as circle
Shape, semicircle, irregular rectangle etc..The arrangement of Slab element above mother substrate can be divided based on panel unit shape to be cut
Mode, for example, can be common matrix arrangement.The situation of multiple panel units in matrix arrangement is shown in fig 3b.
In Fig. 3 a, illustrated as a example by the first chock insulator matter is arranged on the first mother substrate.Based on shown in Fig. 3 a
Motherboard structure, when line of cut of 007 pair of the second mother substrate of scribing wheel along between two panel units cuts, due to
Line of cut both sides, the sealed plastic box external zones of two panel units are both provided with the first chock insulator matter 006 for buffering, the second mother substrate
002 deformation occurred at cut point can be suppressed, and the shear stress produced due to deformation at cut point can be buffered, from
And reduce the risk for producing oblique segmentation at cut point due to larger stress concentration.In the same manner, scribing wheel is to the first mother substrate
001 when being cut, and the generation of oblique segmentation equally can be reduced because of the cushioning effect of the first chock insulator matter.
It is preferred that as shown in Figure 3 a and Figure 3 b shows, in per group of first chock insulator matter, each the first chock insulator matter it is highly identical；No
With the first chock insulator matter of group along the direction height reduction away from sealed plastic box area.So, these difference group first chock insulator matters from
Sealed plastic box area has been outwardly formed a transition structure, what cut mother substrate occurred along such structure in cut point part
Deformation more relaxes, and can reach more preferable buffering effect, and during so as to further reducing cutting, effect of the stress to mother substrate, enters
One step ground, reduces the generation of the oblique segmentation for deviateing former line of cut.
In the specific implementation, the first chock insulator matter of different groups can be uniform along the direction height away from sealed plastic box area
Reduce step by step, or reduction heterogeneous.It is preferred that being to reduce step by step.
In the specific implementation, the first chock insulator matter of different groups along the spacing distribution in the direction away from sealed plastic box area can be
It is uniform, or heterogeneous.It is preferred that its distribution is uniform, so as to form the structure for seamlessly transitting.
It is preferred that in per group of first chock insulator matter, each the first chock insulator matter it is highly identical；First chock insulator matter edge of different groups
The directional spreding density reduction away from sealed plastic box area.The first chock insulator matter of different groups is embodied in along away from sealed plastic box area
Direction the first chock insulator matter cross-sectional area on reduce, and/or the first chock insulator matter of different group is along the direction away from sealed plastic box area
First chock insulator matter distributed number is more sparse.Specifically, more sparse the first chock insulator matter edge for showing as different groups of quantity
, and/or first chock insulator matter of different group along
Away from direction the first chock insulator matter distribution spacing increase in the sealed plastic box area.Such distribution further increases buffering effect, subtracts
The generation of few oblique segmentation for deviateing former line of cut.
It is preferred that in per group of first chock insulator matter, the top of each the first chock insulator matter is sphere, it is preferably smooth slow to realize
Punching.
In the specific implementation, the species of the material of the first chock insulator matter has various, it is preferred that the material of the first chock insulator matter is bullet
Property material.In the present embodiment, as the first chock insulator matter has elasticity, can be further such that the deformation of the mother substrate being cut be delayed
With, increasing buffering effect, further reduction deviates the generation of the oblique segmentation of former line of cut.Wherein it is possible to as the first chock insulator matter
The species of elastomeric material have various, can for example be polymer resin material (such as pi), acrylic based material, etc.
Deng will not enumerate herein.
When being embodied as, it is preferred that as shown in figure 4, multiple second chock insulator matters 008 are provided with viewing area；Second dottle pin
The height of thing is equal to the distance between the first mother substrate and the second mother substrate.Wherein, the second chock insulator matter is mainly used in support first
The distance between mother substrate and the second mother substrate.So, from the second chock insulator matter to the first chock insulator matter, in highly being gradually lowered
Gesture, formation are seamlessly transitted, and further increase buffering effect, reduce the generation of the oblique segmentation for deviateing former line of cut.
Typically, the technique of the second chock insulator matter in viewing area uses array processes, and the precision of array processes is higher, base
In this, it is preferred that the first chock insulator matter and the second chock insulator matter pass through a patterning processes shape using same material with layer same material
Into.As such, it is possible to carry out making the first chock insulator matter using the technique of the second chock insulator matter, and using the relatively low printer of craft precision
Skill is fabricated separately the first chock insulator matter and compares, and shape and distribution can be controlled better, can be in the effect for not affecting narrow frame
Under fruit, the buffering effect to stress during cutting is reached.Especially, if the knot of above-mentioned the first chock insulator matter for seamlessly transitting will be formed
Structure, using typography, first its material hardness is slightly higher, moreover due to precision reason, the first of the transition structure of formation
Width between chock insulator matter is excessive, it is difficult under the effect for not affecting narrow frame, the buffering effect to stress during cutting is reached, and
These problems can just be avoided using array processes.
In the specific implementation, according to actual needs the height of the first chock insulator matter can be configured, to reach preferably
Buffering effect.It is preferred that the altitude range of the first chock insulator matter is the 50%～99.9% of the height of the second chock insulator matter.
In the specific implementation, it is preferred that the quantity of the first chock insulator matter arranged in unit area is less than the second chock insulator matter
Quantity.Due to the quantity of the first chock insulator matter arranged in unit area it is excessive or it is very few can all affect buffering effect, compared with
Goodly, the quantity of the first chock insulator matter for arranging in unit area is the 35%～90% of the quantity of the second chock insulator matter.
Motherboard in the embodiment of the present invention can be, but not limited to be the motherboard in OLED techniques.
Based on same inventive concept, the embodiment of the present invention also provides a kind of motherboard as described in any of the above embodiment
Manufacture method, as shown in figure 5, the method at least comprises the steps：
Step 510, formed on the first mother substrate multiple panel units viewing area figure；
Step 520, the sealed plastic box external zones in sealed plastic box area form least one set and surround answering for buffering for sealed plastic box area
The figure of the first chock insulator matter of power；
Step 530, the first mother substrate is packaged using sealed plastic box with the second mother substrate；Wherein, each first dottle pin
The height of thing is not higher than the distance between the first mother substrate and the second mother substrate.
It is preferred that the manufacture method of motherboard provided in an embodiment of the present invention also includes：
The figure of the second chock insulator matter is formed in viewing area；
Sealed plastic box external zones in sealed plastic box area forms the figure that least one set surrounds first chock insulator matter in sealed plastic box area, bag
Include：
Using a patterning processes, the first chock insulator matter of least one set is formed while the figure of the second chock insulator matter is formed
Figure.
In the present embodiment, it is possible to use the technique of the second chock insulator matter carries out making the first chock insulator matter, and utilizes craft precision
Relatively low typography is fabricated separately the first chock insulator matter and compares, and shape and distribution can be controlled better, can be in not shadow
Ring under the effect of narrow frame, reach the buffering effect to stress during cutting.Especially, if to be formed it is above-mentioned seamlessly transit first
The structure of chock insulator matter, using typography, first its material hardness is slightly higher, moreover due to precision reason, the transition of formation
Width between first chock insulator matter of structure is excessive, it is difficult under the effect for not affecting narrow frame, reach to stress during cutting
Buffering effect, and these problems can be just avoided using array processes.
In above-described embodiment, the sealed plastic box external zones in sealed plastic box area formed least one set surround the first of sealed plastic box area every
The figure of underbed, specific implementation can be：
The first of least one set encirclement sealed plastic box area is formed using sealed plastic box external zones of the gray level mask plate in sealed plastic box area
The figure of chock insulator matter.
Wherein, gray level mask plate can be semi-transparent photomask board.
Below by taking OLED techniques as an example, the manufacture method of motherboard provided in an embodiment of the present invention is retouched in further detail
State.
In the present embodiment, with the first mother substrate as low temperature polycrystalline silicon (Low Temperature Poly Silicon,
LTPS) backboard, as a example by the second mother substrate is glass cover-plate.
Step one, formed on the first mother substrate multiple panel units viewing area figure.
Wherein, viewing area includes active layer, the first insulating barrier, grid layer, the second insulating barrier, the figure of metal capacitance layer
Deng also including the figure of pixel defining layer (Pixel Design Layer, PDL).
Step 2, the figure for forming dottle pin nitride layer using gray level mask plate on PDL layers, wherein, the is formed in viewing area
The figure of two chock insulator matters, the sealed plastic box external zones in sealed plastic box area form multigroup figure for buffering the first chock insulator matter of stress
Shape, in the figure of per group of first chock insulator matter, the figure of each the first chock insulator matter it is highly identical；First chock insulator matter of different groups
Figure is along the direction height reduction away from sealed plastic box area.
Wherein, the cut place between the Graph Distance sealed plastic box and panel unit of the second chock insulator matter keeps normal technique
Safe distance, to ensure that cutting technique will not produce impact to other techniques.If in the outer coated UV solidification glue of glass frame glue,
The figure of the first chock insulator matter can be kept at a distance with uv-curable glue, it is also possible to press close to uv-curable glue.
It is preferred that in gray level mask plate, the scope of the transmitance of the corresponding position of figure of the first chock insulator matter is 1%～
15%.
Step 3, the first mother substrate is packaged using sealed plastic box with the second mother substrate.
Wherein, the height of each the first chock insulator matter is less than the distance between the first mother substrate and the second mother substrate, and each the
The height of two chock insulator matters is equal to the distance between the first mother substrate and the second mother substrate.
Step 4, carry out the techniques such as follow-up evaporation and encapsulation.
According to the structure of the i.e. available motherboard as shown in Figure 3 a of above step one～tetra-, the motherboard can be carried out cutting
The subsequent process such as cut.
In motherboard provided in an embodiment of the present invention and preparation method thereof, first is not higher than in sealed plastic box external zones rational height
First chock insulator matter of the distance between mother substrate and the second mother substrate, in cutting technique subsequently to motherboard, mother substrate can be sent out
Raw deformation, the first chock insulator matter of setting enable to the deformation mitigation of cut mother substrate, play cushioning effect, reduce mother
The deformation quantity of substrate, so as to reduce effect of the stress to mother substrate during cutting, so as to reduce sending out for the oblique segmentation for deviateing former line of cut
It is raw, improve product yield.
Obviously, those skilled in the art can carry out the essence of various changes and modification without deviating from the present invention to the present invention
God and scope.So, if these modifications of the present invention and modification belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising these changes and modification.
Claims (10)
1. a kind of motherboard, including relative and the first mother substrate for putting and the second mother substrate；The motherboard includes multiple panel units；
Wherein, described each panel unit has viewing area, surrounds the sealed plastic box area of viewing area, and the envelope for surrounding the sealed plastic box area
Frame glue external zones；It is characterized in that：
Between first mother substrate and second mother substrate, least one set encirclement in the sealed plastic box external zones, is provided with
First chock insulator matter for buffering stress in the sealed plastic box area, the height not higher than described first of each first chock insulator matter
The distance between mother substrate and second mother substrate.
2. motherboard according to claim 1, it is characterised in that the height of each first chock insulator matter is less than described first
The distance between mother substrate and second mother substrate.
3. motherboard according to claim 2, it is characterised in that in per group of first chock insulator matter, each described first every
Underbed it is highly identical；First chock insulator matter of different groups is along the direction height reduction away from the sealed plastic box area.
4. motherboard according to claim 1, it is characterised in that first chock insulator matters of different groups are along away from the envelope
The directional spreding density in frame glue area is reduced.
5. motherboard according to claim 1, it is characterised in that the top of each first chock insulator matter is sphere.
6. motherboard according to claim 1, it is characterised in that multiple second chock insulator matters are provided with the viewing area；Institute
The height for stating the second chock insulator matter is equal to the distance between first mother substrate and second mother substrate.
7. motherboard according to claim 6, it is characterised in that the altitude range of first chock insulator matter be described second every
The 50%～99.9% of the height of underbed.
8. motherboard according to claim 6, it is characterised in that the number of first chock insulator matter arranged in unit area
Quantity of the amount less than second chock insulator matter.
9. motherboard according to claim 8, it is characterised in that the number of first chock insulator matter arranged in unit area
Measure 35%～90% of the quantity for second chock insulator matter.
10. a kind of manufacture method of the motherboard as described in any one of claim 1～9, it is characterised in that comprise the steps：
The figure of the viewing area of multiple panel units is formed on the first mother substrate；
Sealed plastic box external zones in sealed plastic box area forms for buffering stress first that least one set surrounds the sealed plastic box area
The figure of chock insulator matter；
First mother substrate is packaged using sealed plastic box with the second mother substrate；Wherein, the height of each first chock insulator matter
The distance between not higher than described first mother substrate and second mother substrate.
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| CN108364981A (en) * | 2018-01-31 | 2018-08-03 | 昆山国显光电有限公司 | A kind of cutting method of display panel, sub- display panel and display panel |
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| WO2022032785A1 (en) * | 2020-08-11 | 2022-02-17 | Tcl华星光电技术有限公司 | Display motherboard |
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