CN106548959B - Reaction chamber and semiconductor processing equipment - Google Patents

Reaction chamber and semiconductor processing equipment Download PDF

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Publication number
CN106548959B
CN106548959B CN201510611653.8A CN201510611653A CN106548959B CN 106548959 B CN106548959 B CN 106548959B CN 201510611653 A CN201510611653 A CN 201510611653A CN 106548959 B CN106548959 B CN 106548959B
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insulating ring
reaction chamber
groove
upper electrode
process assembly
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CN106548959A (en
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余志龙
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Beijing North Microelectronics Co Ltd
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Beijing North Microelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
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Abstract

The invention provides a reaction chamber and semiconductor processing equipment, which comprises a process assembly and an upper electrode arranged at the top of the process assembly, wherein an insulating ring for isolating the upper electrode and the process assembly is also arranged between the upper electrode and the process assembly, a blocking part is arranged on the process assembly and positioned around the insulating ring, the blocking part comprises a friction surface attached to the outer peripheral wall of the insulating ring, and the friction surface is used for generating friction force capable of blocking relative movement between the upper electrode and the outer peripheral wall of the insulating ring when the upper electrode is separated from the process assembly. The reaction chamber provided by the invention can prevent the insulating ring from being separated from the process assembly along with the upper electrode when the upper electrode is opened, so that the insulating ring can be protected.

Description

Reaction chamber and semiconductor processing equipment
Technical Field
The invention relates to the field of semiconductor equipment manufacturing, in particular to a reaction chamber and semiconductor processing equipment.
Background
In the fabrication of integrated circuits, a Deposition process for depositing a material such as a metal layer on a wafer is generally performed by a Physical Vapor Deposition (PVD) technique.
Fig. 1 is a schematic structural view of a conventional PVD apparatus. Fig. 2 is a partial cross-sectional view of a conventional PVD apparatus. As shown in fig. 1 and 2, the PVD apparatus includes a reaction chamber 10, a susceptor 11 for carrying a wafer is disposed in the reaction chamber 10, an upper electrode 15 is disposed on a top of the reaction chamber 10, and a target 14 is disposed on the upper electrode 15 at a position opposite to the susceptor 11. Moreover, a process module 12 (including a liner ring) is disposed in the reaction chamber 10 to protect the inner wall of the chamber from sputtering, and a ceramic ring 13 is disposed between the process module 12 and the upper electrode 15 to isolate the upper electrode 15 and the target 14 with high voltage from the grounded process module 12 when performing a process, wherein the ceramic ring 13 is disposed on the process module 12 only by its own weight; and, a sealing ring 16 is further disposed between the target 14 and the ceramic ring 13 to seal a gap therebetween, so as to ensure a vacuum environment of the reaction chamber 10. During the process, the top opening of the reaction chamber 10 is sealed by the upper electrode 15, and the sealing ring 16 is attached to the ceramic ring 13; when maintenance operation is required, the upper electrode 15 opens the top opening of the reaction chamber 10, and the sealing ring 16 is separated from the ceramic ring 13.
The above reaction chamber inevitably has the following problems in practical use:
since the reaction chamber is in a vacuum state, the pressure difference between the inside and the outside of the chamber is large, so that the ceramic ring 13 and the sealing ring 16 are bonded together due to long-term contact, and when the upper electrode 15 is opened, the ceramic ring 13 may be separated from the process kit 12 along with the sealing ring 16, thereby causing damage to the ceramic ring 12.
Disclosure of Invention
The present invention is directed to at least solve one of the problems of the prior art, and provides a reaction chamber and a semiconductor processing apparatus, which can prevent an insulating ring from being separated from a process module when an upper electrode is turned on, thereby protecting the insulating ring.
The invention provides a reaction chamber, which comprises a process assembly and an upper electrode arranged at the top of the process assembly, wherein an insulating ring for isolating the upper electrode from the process assembly is further arranged between the upper electrode and the process assembly, a blocking member is arranged on the process assembly and positioned around the insulating ring, the blocking member comprises a friction surface attached to the outer peripheral wall of the insulating ring, and the friction surface is used for generating friction force capable of blocking relative movement of the upper electrode and the outer peripheral wall of the insulating ring when the upper electrode is separated from the process assembly.
Preferably, a flange is further disposed on the blocking member, the flange is located above the insulating ring and overlaps the insulating ring, and a vertical distance is provided between the flange and the insulating ring.
Preferably, two strip-shaped through holes are arranged on the blocking piece at intervals, and a fastening screw is arranged in each strip-shaped through hole; when the fastening screw is unscrewed, the fastening screw can move relatively along the strip-shaped through hole relative to the process assembly so as to enable the flange to move to a first position overlapped with the insulating ring or a second position not overlapped with the insulating ring; the fastening screw, when tightened, immobilizes the blocking element relative to the process kit part.
Preferably, the value range of the vertical distance is 0.5-1 mm.
Preferably, a first groove is arranged at the outer edge of the upper surface of the insulating ring, a second groove is correspondingly arranged at the inner edge of the upper surface of the process assembly, and the width of the first groove is not less than the width of the second groove; the stop is located in the second groove and the flange is located in the first groove when moved to the first position.
Preferably, the maximum thickness of the blocking member is not greater than the depth of the first groove and the second groove.
Preferably, a first guide arrow is arranged on the upper surface of the insulation ring and positioned at the inner side of the first groove; a second guide arrow is correspondingly arranged on the upper surface of the process assembly and positioned on the outer side of the second groove; when a connecting line of the first guide arrow and the second guide arrow is in the radial direction of the insulating ring, the first groove is opposite to the second groove.
Preferably, the number of the blocking members is multiple and is uniformly distributed along the circumferential direction of the insulating ring.
Preferably, the stopper includes a ring body, and an inner peripheral wall surface of the ring body serves as the friction surface.
As another technical solution, the present invention further provides a semiconductor processing apparatus, which includes a reaction chamber, wherein the reaction chamber provided by the present invention is adopted.
The invention has the following beneficial effects:
the reaction chamber is arranged on the process assembly and is provided with the blocking piece positioned around the insulating ring, the blocking piece comprises the friction surface which is contacted with the outer peripheral wall of the insulating ring, and when the upper electrode is separated from the process assembly, the blocking piece and the outer peripheral wall of the insulating ring generate friction force which can block relative movement of the upper electrode and the insulating ring, and the friction force can counteract acting force which is applied to the insulating ring by the upper electrode and enables the upper electrode to be separated from the process assembly, so that the insulating ring can be prevented from being separated from the process assembly along with the upper electrode, and the insulating ring can be protected.
According to the semiconductor processing equipment provided by the invention, the insulating ring can be prevented from being separated from the process assembly together when the upper electrode is opened by adopting the reaction chamber provided by the invention, so that the insulating ring can be protected.
Drawings
FIG. 1 is a schematic structural diagram of a conventional PVD apparatus;
FIG. 2 is a partial cross-sectional view of a prior art PVD apparatus;
FIG. 3A is a top view of a reaction chamber according to a first embodiment of the present invention;
FIG. 3B is a partial cross-sectional view taken along line A-A of FIG. 3A;
FIG. 4A is a top view of a reaction chamber according to a second embodiment of the present invention;
FIG. 4B is a partial cross-sectional view taken along line B-B of FIG. 4A;
FIG. 5A is a partial top view of a reaction chamber with a barrier member in a first position according to a third embodiment of the present invention;
FIG. 5B is a partial cross-sectional view of the reaction chamber of FIG. 5A;
FIG. 5C is a partial top view of a reaction chamber with a barrier in a second position according to a third embodiment of the present invention;
FIG. 5D is a partial cross-sectional view of the reaction chamber of FIG. 5C; and
fig. 6 is a top view of a reaction chamber according to a fourth embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the reaction chamber and the semiconductor processing apparatus provided by the present invention will be described in detail below with reference to the accompanying drawings.
The reaction chamber provided by the invention comprises a process assembly and an upper electrode. The process kit generally includes a liner ring surrounding the inner wall of the reaction chamber for protecting the inner wall of the reaction chamber from sputtering, and a mounting flange disposed at an upper end of the liner ring and overlying and fixedly connected to an upper end of a sidewall of the chamber of the reaction chamber. The upper electrode is arranged at the top of the reaction chamber and is positioned above the process assembly, and the top opening of the reaction chamber can be closed or opened by the upper electrode in a turnover mode and the like so as to carry out process or maintenance. And an insulating ring is arranged between the upper electrode and the process assembly and used for isolating the high-voltage upper electrode (and the target material arranged on the bottom surface of the upper electrode) from the grounded process assembly during the process, the insulating ring can be made of high-temperature-resistant and insulating materials such as ceramics and the like, and the insulating ring is placed on the process assembly only by means of self gravity. In addition, a sealing ring is arranged between the upper electrode and the insulating ring and used for sealing a gap between the upper electrode and the insulating ring so as to ensure the vacuum environment of the reaction chamber. During the process, the top opening of the reaction chamber is sealed by the upper electrode, and the sealing ring is attached to the insulating ring; when maintenance operation is needed, the top opening of the reaction chamber is opened by the upper electrode, and the sealing ring is separated from the insulating ring.
And a blocking piece is arranged on the process assembly and around the insulating ring, and comprises a friction surface attached to the outer peripheral wall of the insulating ring, so that when the upper electrode is separated from the process assembly, a friction force capable of blocking the relative movement of the upper electrode and the insulating ring is generated between the upper electrode and the outer peripheral wall of the insulating ring, the friction force can counteract the acting force which is applied to the insulating ring by the upper electrode and enables the upper electrode to be separated from the process assembly, and therefore the insulating ring can be prevented from being separated from the process assembly along with the upper electrode, and the insulating ring can be protected.
Specific embodiments of the blocking member will be described in detail below. Specifically, fig. 3A is a top view of a reaction chamber according to a first embodiment of the present invention. Fig. 3B is a partial cross-sectional view taken along line a-a of fig. 3A. Referring to fig. 3A and 3B, four blocking members 23 are disposed on the process assembly 21 around the insulating ring 22 and are uniformly distributed along the circumference of the insulating ring 22, and each blocking member 23 includes a friction surface 231, and the friction surface 231 is attached to the outer circumferential wall of the insulating ring 22, i.e., the shapes of the two are identical. When the upper electrode is separated from the process kit 21, that is, the top opening of the reaction chamber is opened, a frictional force that can hinder the relative movement between the frictional surface 231 and the outer circumferential wall of the insulating ring 22 is generated between the frictional surface 231 and the outer circumferential wall of the insulating ring 22, and the frictional force can offset the adhesive force between the insulating ring 22 and the seal ring on the upper electrode, so that the insulating ring 22 is not easily separated from the process kit along with the seal ring, and the insulating ring can be protected. In practical applications, the blocking member 23 should be made of a material having a high coefficient of friction with the insulating ring 22.
In this embodiment, a second groove 211 is disposed at an inner edge of the upper surface of the process kit 21, the blocking member 23 is located in the second groove 211 and is fixedly connected to the process kit 21 by the fastening screw 24, and a maximum thickness of the blocking member 23 is not greater than a depth of the second groove 211, that is, the upper surface of the blocking member 23 is not higher than the upper surface of the process kit 21, so that the upper electrode can be fastened on the insulating ring 22.
In this embodiment, the number of the stoppers 23 is four, but the present invention is not limited to this, and in practical applications, the number of the stoppers may be one, two, three, or five or more.
Fig. 4A is a top view of a reaction chamber according to a second embodiment of the present invention. Fig. 4B is a partial cross-sectional view taken along line B-B of fig. 4A. Referring to fig. 4A and 4B, in this embodiment, compared to the first embodiment, four blocking members 30 are disposed on the process assembly 21 and around the insulating ring 22, and are uniformly distributed along the circumferential direction of the insulating ring 22, and each blocking member 30 includes a friction surface 301, and the friction surface 301 is attached to the outer circumferential wall of the insulating ring 22. Moreover, a flange 302 is further provided on the stopper 30, the flange 302 is raised with respect to the inner peripheral wall of the stopper 30, the flange 302 is located above the insulating ring 22 and overlaps the insulating ring 22, and a vertical distance H is provided between the flange 302 and the insulating ring 22.
Although the adhesive force between the insulating ring 22 and the seal ring on the upper electrode can be cancelled by generating a frictional force between the frictional surface 301 and the outer peripheral wall of the insulating ring 22, which can hinder the relative movement therebetween, in practical applications, the magnitude of the adhesive force is variable and may vary depending on the contact time between the insulating ring 22 and the seal ring, the internal and external pressure difference during the chamber vacuum, and the like, and therefore, when the adhesive force is large, the frictional force between the frictional surface 301 and the outer peripheral wall of the insulating ring 22 may not completely cancel the adhesive force, and the insulating ring 22 may still be separated from the process kit 21 together with the seal ring by the adhesive force. Therefore, the flange 302 can prevent the insulating ring 22 from being detached from the process kit 21 when the frictional force between the frictional surface 301 and the outer circumferential wall of the insulating ring 22 cannot completely cancel the adhesive force. It will be appreciated that at least a portion of the adhesive force may be counteracted by the friction surface 301, which may act as a buffer to avoid that the insulating ring 22 is damaged by the high interaction force between the insulating ring 22 and the flange 302. In addition, the vertical distance H can also play a role of buffering, so as to prevent the insulating ring 22 from being damaged due to a large interaction force between the insulating ring 22 and the flange 302. Preferably, the vertical distance H ranges from 0.5 mm to 1 mm.
In this embodiment, a first groove 221 is disposed at an outer edge of an upper surface of the insulating ring 22, and a second groove 211 is correspondingly disposed at an inner edge of the upper surface of the process assembly 21, the blocking member 23 is located in the second groove 211, the flange 302 is located in the first groove 221, the blocking member 23 is fixedly connected to the process assembly 21 through the fastening screw 24, and a maximum thickness of the blocking member 30 is not greater than depths of the first groove 221 and the second groove 211, that is, an upper surface of the blocking member 30 is not higher than upper surfaces of the process assembly 21 and the insulating member 22, so that the upper electrode can be fastened on the insulating ring 22.
Referring to fig. 5A to 5D, the reaction chamber provided in this embodiment is different from the second embodiment in that: the stop 40 can be moved relative to the process kit part 21 to move the flange 402 to a first position overlapping the insulating ring 22 (as shown in fig. 5B) or a second position not overlapping the insulating ring 22 (as shown in fig. 5D).
Specifically, two strip-shaped through holes 401 are arranged on the blocking member 40 at intervals, and a fastening screw 41 is arranged in each strip-shaped through hole 401, and the fastening screw 41 is threaded with the process kit 21 through the strip-shaped through hole 401, so that the blocking member 40 and the process kit 21 are fixed together. Further, when the fastening screw 41 is unscrewed, the fastening screw 41 is relatively movable along the strip through hole 401 with respect to the process kit 21, in other words, the stopper 40 is movable along the long axis direction of the strip through hole 401 (substantially in the radial direction of the insulating ring 22) with respect to the process kit 21, so that the flange 402 can be moved to the first position overlapping with the insulating ring 22 or the second position not overlapping with the insulating ring 22. When the tightening screw 41 is tightened, the blocking member 40 is fixed relative to the process kit part 21, so that the flange 402 can be fixed in the first position or the second position.
In the present embodiment, a first groove 221 is disposed at the outer edge of the upper surface of the insulating ring 22, and a second groove 211 is correspondingly disposed at the inner edge of the upper surface of the process kit 21, the blocking member 40 is located in the second groove 211, and the flange 402 is located in the first groove 221 when moving to the first position; the flange 402 is located within the second recess 211 when moved to the second position. Also, the width of the first groove 221 is not less than the width of the second groove 211 to ensure that the flange 402 can move into the first groove 221.
Preferably, the maximum thickness of the blocking member 40 is not greater than the depths of the first groove 221 and the second groove 211, that is, the upper surface of the blocking member 40 is not higher than the upper surfaces of the process kit 21 and the insulating member 22, so as to ensure that the upper electrode can be fastened on the insulating ring 22.
Preferably, as shown in fig. 5A, a first guide arrow 42 is provided on the upper surface of the insulation ring 22 and inside the first groove 221; a second guiding arrow 43 is correspondingly arranged on the upper surface of the process assembly 21 and positioned outside the second groove 211; when a line connecting the first guide arrow 42 and the second guide arrow 43 is in the radial direction of the insulating ring 22, the first groove 221 is opposed to the second groove 211. By means of the first guide arrow 42 and the second guide arrow 43, a guiding action may be effected to facilitate the centering of the first groove 221 with the second groove 211.
Fig. 6 is a top view of a reaction chamber according to a fourth embodiment of the present invention. Referring to fig. 6, the difference between the present embodiment and the above embodiments is: the stopper 60 includes a ring body, an inner peripheral wall surface of which serves as a friction surface. That is, the friction surface is a closed annular structure and is fitted to the outer peripheral wall surface of the insulating ring 22.
Preferably, a flange (not shown) may be formed on the ring body, the flange is protruded relative to the inner peripheral wall of the blocking member 60, the flange is located above the insulating ring 22 and overlapped with the insulating ring 22, and the flange is vertically spaced from the insulating ring 22.
In practice, the ring body can be fixed to the process kit 21 by means of a plurality of fastening screws.
In summary, in the reaction chamber provided in the above embodiments of the invention, the blocking member is disposed on the process assembly and around the insulating ring, and the blocking member includes a friction surface contacting with the outer peripheral wall of the insulating ring, so as to generate a friction force between the upper electrode and the outer peripheral wall of the insulating ring, which can counteract a force applied by the upper electrode to the insulating ring to separate the upper electrode from the process assembly, so as to prevent the insulating ring from separating from the process assembly, thereby protecting the insulating ring.
As another technical solution, an embodiment of the present invention provides a semiconductor processing apparatus, which includes a reaction chamber, and the reaction chamber is provided by the above embodiments of the present invention.
According to the semiconductor processing equipment provided by the embodiment of the invention, the reaction chamber provided by each embodiment of the invention can be used for preventing the insulating ring from being separated from the process assembly together when the upper electrode is opened, so that the insulating ring can be protected.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims (8)

1. A reaction chamber comprises a process assembly and an upper electrode arranged at the top of the process assembly, wherein an insulating ring for isolating the upper electrode and the process assembly is further arranged between the upper electrode and the process assembly, and the reaction chamber is characterized in that a blocking member is arranged on the process assembly and around the insulating ring, the blocking member comprises a friction surface attached to the outer peripheral wall of the insulating ring and used for generating friction force capable of blocking relative movement of the upper electrode and the outer peripheral wall of the insulating ring when the upper electrode is separated from the process assembly; wherein the content of the first and second substances,
the baffle is also provided with a flange, the flange is positioned above the insulating ring and is overlapped with the insulating ring, and a vertical distance is reserved between the flange and the insulating ring; and the number of the first and second electrodes,
two strip-shaped through holes are arranged on the blocking piece at intervals, and a fastening screw is arranged in each strip-shaped through hole;
when the fastening screw is unscrewed, the fastening screw can move relatively along the strip-shaped through hole relative to the process assembly so as to enable the flange to move to a first position overlapped with the insulating ring or a second position not overlapped with the insulating ring;
the fastening screw, when tightened, immobilizes the blocking element relative to the process kit part.
2. The reaction chamber of claim 1, wherein the vertical distance is in a range of 0.5 mm to 1 mm.
3. The reaction chamber of claim 1, wherein a first groove is disposed at an outer edge of an upper surface of the insulating ring and a second groove is correspondingly disposed at an inner edge of an upper surface of the process kit part, and a width of the first groove is not less than a width of the second groove;
the stop is located in the second groove and the flange is located in the first groove when moved to the first position.
4. The reaction chamber of claim 3 wherein a maximum thickness of the barrier is no greater than a depth of the first and second grooves.
5. The reaction chamber of claim 3, wherein a first guide arrow is disposed on an upper surface of the insulating ring and inside the first groove; a second guide arrow is correspondingly arranged on the upper surface of the process assembly and positioned on the outer side of the second groove;
when a connecting line of the first guide arrow and the second guide arrow is in the radial direction of the insulating ring, the first groove is opposite to the second groove.
6. The reaction chamber of claim 1, wherein the barrier is plural in number and is uniformly distributed along a circumferential direction of the insulating ring.
7. The reaction chamber as claimed in claim 1, wherein the blocking member includes a ring body, an inner circumferential wall surface of which serves as the rubbing surface.
8. A semiconductor processing apparatus comprising a reaction chamber, wherein the reaction chamber is the reaction chamber of any one of claims 1 to 7.
CN201510611653.8A 2015-09-23 2015-09-23 Reaction chamber and semiconductor processing equipment Active CN106548959B (en)

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CN201510611653.8A CN106548959B (en) 2015-09-23 2015-09-23 Reaction chamber and semiconductor processing equipment

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CN106548959B true CN106548959B (en) 2020-01-03

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Publication number Priority date Publication date Assignee Title
CN108695131B (en) * 2017-04-05 2020-04-28 北京北方华创微电子装备有限公司 Reaction chamber

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100849179B1 (en) * 2007-01-10 2008-07-30 삼성전자주식회사 Structure for protecting gap formation and plasma processing equipment having the same
CN103887136A (en) * 2012-12-20 2014-06-25 上海华虹宏力半导体制造有限公司 Etching cavity suitable for metal dry method etching semiconductor equipment
CN104916572A (en) * 2014-03-14 2015-09-16 北京北方微电子基地设备工艺研究中心有限责任公司 Bearing device and plasma processing device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100849179B1 (en) * 2007-01-10 2008-07-30 삼성전자주식회사 Structure for protecting gap formation and plasma processing equipment having the same
CN103887136A (en) * 2012-12-20 2014-06-25 上海华虹宏力半导体制造有限公司 Etching cavity suitable for metal dry method etching semiconductor equipment
CN104916572A (en) * 2014-03-14 2015-09-16 北京北方微电子基地设备工艺研究中心有限责任公司 Bearing device and plasma processing device

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