CN106548959A - Reaction chamber and semiconductor processing equipment - Google Patents
Reaction chamber and semiconductor processing equipment Download PDFInfo
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- CN106548959A CN106548959A CN201510611653.8A CN201510611653A CN106548959A CN 106548959 A CN106548959 A CN 106548959A CN 201510611653 A CN201510611653 A CN 201510611653A CN 106548959 A CN106548959 A CN 106548959A
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- Prior art keywords
- reaction chamber
- dead ring
- groove
- technique component
- ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- General Chemical & Material Sciences (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Reaction chamber and semiconductor processing equipment that the present invention is provided, which includes technique component and the Top electrode being arranged at the top of the technique component, and be additionally provided between Top electrode and technique component for completely cutting off the dead ring of the two, on technique component, and block piece is provided with around dead ring, the block piece includes the rubbing surface that the periphery wall with dead ring fits, for when Top electrode departs from technique component, the frictional force that can hinder the two relative motion being produced and the periphery wall of dead ring between.The reaction chamber that the present invention is provided, which can be when Top electrode be opened, it is to avoid dead ring departs from technique component therewith together, such that it is able to protect dead ring.
Description
Technical field
The present invention relates to semiconductor equipment manufacture field, in particular it relates to a kind of reaction chamber with
And semiconductor processing equipment.
Background technology
In the manufacture process of integrated circuit, generally using physical vapour deposition (PVD) (Physical
Vapor Deposition, hereinafter referred to as PVD) technology carries out deposited metal layer etc. on chip
The depositing operation of material.
Fig. 1 is the structural representation of existing PVD equipment.Fig. 2 is existing PVD equipment
Partial sectional view.As depicted in figs. 1 and 2, PVD equipment includes reaction chamber 10,
The pedestal 11 for bearing wafer is provided with the reaction chamber 10, and in the reaction chamber 10
Top be provided with Top electrode 15, it is and in Top electrode 15 and relative with pedestal 11
Target 14 is provided with position.And, technique component 12 is additionally provided with reaction chamber 10
(include grommet), to protect chamber inner wall not to be sputtered, and technique component 12 with
Ceramic ring 13 is additionally provided between Top electrode 15, to when technique is carried out, by the upper of high pressure
Electrode 15 and target 14 are isolated with the technique component 12 of ground connection, and the ceramic ring 13 is only relied on certainly
Heavy sensation of the body power is placed on technique component 12；Also, between target 14 and ceramic ring 13 also
Sealing ring 16 is provided with, to seal to gap therebetween, to ensure reaction chamber
The vacuum environment of room 10.When technique is carried out, Top electrode 15 is by the top of reaction chamber 10
Closure of openings, now sealing ring 16 fit with ceramic ring 13；Needing to be serviced operation
When, the open top of reaction chamber 10 is opened wide by Top electrode 15, now sealing ring 16 and pottery
Ceramic ring 13 is separated.
Above-mentioned reaction chamber is inevitably present problems with actual applications：
As above-mentioned reaction chamber is in vacuum state, the pressure differential inside and outside chamber is larger, leads
Cause ceramic ring 13 be bonded together because of Long contact time with sealing ring 16, this causes opening
When opening Top electrode 15, ceramic ring 13 may depart from technique component 12 with sealing ring 16,
So as to cause ceramic ring 12 to damage.
The content of the invention
It is contemplated that at least solving one of technical problem present in prior art, it is proposed that one
Reaction chamber and semiconductor processing equipment are planted, which can be when Top electrode be opened, it is to avoid insulation
Ring departs from technique component therewith together, such that it is able to protect dead ring.
A kind of reaction chamber is provided to realize the purpose of the present invention, including technique component and setting
Top electrode at the top of the technique component, and between the Top electrode and the technique component
It is additionally provided with for completely cutting off the dead ring of the two, on the technique component, and is located at described exhausted
Block piece is provided with around edge ring, the block piece includes the periphery wall phase with the dead ring
The rubbing surface of laminating, for when the Top electrode departs from the technique component, with the insulation
The frictional force that can hinder the two relative motion is produced between the periphery wall of ring.
Preferably, flange is additionally provided with the block piece, the flange is located at described exhausted
The top of edge ring, and overlapping with the dead ring, and the flange and the dead ring it
Between have vertical spacing.
Preferably, two strip through-holes are arranged at intervals with the block piece, and at each
Trip bolt is provided with strip through-hole；The trip bolt, can be relative to described when unscrewing
Technique component is along the strip through-hole relative movement, so that the flange is moved to and the insulation
The equitant first position of ring, or with the non-overlapping second position of the dead ring；It is described
Trip bolt makes the block piece maintain static relative to the technique component when screwing.
Preferably, the span of the vertical spacing is in 0.5～1mm.
Preferably, the upper surface outer edge in the dead ring is provided with the first groove, and
Accordingly the upper surface inside edge in the technique component is provided with the second groove, and described first
Width of the width of groove not less than second groove；The block piece is recessed positioned at described second
In groove, and the flange is when the first position is moved to, in first groove.
Preferably, the maximum gauge of the block piece is no more than first groove and described
The depth of the second groove.
Preferably, on the upper surface of the dead ring, and in first groove
Side is provided with the first guiding arrow；And accordingly in the upper surface of the technique component, and be located at
The second guiding arrow is provided with the outside of second groove；Described first is oriented to arrow and second
Be oriented to arrow line the dead ring radially when, first groove and described second
Groove is relative.
Preferably, the quantity of the block piece is multiple and equal along the circumference of the dead ring
Even distribution.
Preferably, the block piece includes ring body, and the inner circumferential wall of the ring body is as described
Rubbing surface.
Used as another technical scheme, the present invention also provides a kind of semiconductor processing equipment, its
Including reaction chamber, the reaction chamber employs the above-mentioned reaction chamber of present invention offer.
The invention has the advantages that：
The reaction chamber that the present invention is provided, its on technique component, and positioned at the week of dead ring
Enclose and be provided with block piece, the block piece includes the rubbing surface contacted with the periphery wall of dead ring,
For when Top electrode departs from technique component, producing and the periphery wall of dead ring between and can hinder two
The frictional force of person's relative motion, the frictional force can offset Top electrode makes which to what dead ring applied
Depart from the active force of technique component, such that it is able to avoid dead ring from departing from technique groups therewith together
Part, such that it is able to protect dead ring.
The semiconductor processing equipment that the present invention is provided, which passes through using the above-mentioned anti-of present invention offer
Chamber is answered, can be when Top electrode be opened, it is to avoid dead ring departs from technique component therewith together,
Such that it is able to protect dead ring.
Description of the drawings
Fig. 1 is the structural representation of existing PVD equipment；
Fig. 2 is the partial sectional view of existing PVD equipment；
The top view of the reaction chamber that Fig. 3 A are provided for first embodiment of the invention；
Fig. 3 B are the partial sectional view in Fig. 3 A along line A-A；
The top view of the reaction chamber that Fig. 4 A are provided for second embodiment of the invention；
Fig. 4 B are the partial sectional view in Fig. 4 A along line B-B；
Fig. 5 A are located at first in block piece for the reaction chamber that third embodiment of the invention is provided
Partial top view during position；
Fig. 5 B are the partial sectional view of reaction chamber in Fig. 5 A；
Fig. 5 C are located at second in block piece for the reaction chamber that third embodiment of the invention is provided
Partial top view during position；
Fig. 5 D are the partial sectional view of reaction chamber in Fig. 5 C；And
The top view of the reaction chamber that Fig. 6 is provided for fourth embodiment of the invention.
Specific embodiment
To make those skilled in the art more fully understand technical scheme, tie below
The reaction chamber and semiconductor processing equipment for closing accompanying drawing to provide the present invention is retouched in detail
State.
The reaction chamber that the present invention is provided includes technique component and Top electrode.Wherein, technique groups
Part generally includes the grommet of the inner wall for being looped around reaction chamber, for protecting reaction chamber
Inwall is not sputtered, and the upper end of the grommet is provided with mounting flange, and the mounting flange is stacked in instead
Answer the cavity wall upper end of chamber, and connection fixed thereto.Top electrode is arranged on reaction chamber
Top, and will can be reacted by modes such as upsets positioned at the top of technique component, and Top electrode
The open top closing of chamber is opened, to carry out technique or maintenance.And, Top electrode with
Dead ring is additionally provided between technique component, to when technique is carried out, by the Top electrode of high pressure
(and installation target on its bottom surface) is isolated with the technique component of ground connection, and the dead ring can
Made with the material for adopting the high temperature resistants such as ceramics and insulate, and dead ring is only relied on from heavy sensation of the body
Power is placed on technique component.Additionally, sealing ring is additionally provided between Top electrode and dead ring,
To seal to gap therebetween, to ensure the vacuum environment of reaction chamber.Entering
During row technique, the open top of reaction chamber is closed by Top electrode, now sealing ring and dead ring
Fit；When operation is needed to be serviced, the open top of reaction chamber is opened wide by Top electrode,
Now sealing ring is separated with dead ring.
And, on technique component, and block piece is provided with around above-mentioned dead ring,
The block piece includes the rubbing surface that the periphery wall with dead ring fits, for departing from Top electrode
During technique component, the friction that can hinder the two relative motion is produced and the periphery wall of dead ring between
Power, the frictional force can offset the work for disengaging it from technique component that Top electrode applies to dead ring
Firmly, such that it is able to avoid dead ring from departing from technique component therewith together, such that it is able to protect absolutely
Edge ring.
Below the specific embodiment of block piece is described in detail.Specifically, Fig. 3 A are
The top view of the reaction chamber that first embodiment of the invention is provided.Fig. 3 B be Fig. 3 A in along A-A
The partial sectional view of line.Fig. 3 A and Fig. 3 B are seen also, on technique component 21, and
Four block pieces 23 are provided with around dead ring 22, and along the circumference of dead ring 22
Be uniformly distributed, and each block piece 23 include rubbing surface 231, the rubbing surface 231 with it is exhausted
The periphery wall of edge ring 22 fits, i.e. the shape of the two matches.Depart from work in Top electrode
Skill component 21, i.e. when the open top of reaction chamber is opened wide, rubbing surface 231 and dead ring
Produce between 22 periphery wall and can hinder the frictional force of the two relative motion, the frictional force can be with
The bonding force between dead ring 22 and the sealing ring in Top electrode is offset, so that dead ring 22
It is not easy to depart from technique component with sealing ring, such that it is able to protect dead ring.Answer actual
With in, the material that block piece 23 should be selected as much as possible and the coefficient of friction between dead ring 22 is big
Material makes.
In the present embodiment, to be provided with second recessed for the upper surface inside edge in technique component 21
Groove 211, block piece 23 are located in the second groove 211, and pass through trip bolt 24 and technique
Component 21 is fixedly connected, and the maximum gauge of block piece 23 is not more than the second groove 211
Depth, i.e. make block piece 23 upper surface be not higher than technique component 21 upper surface, from
And can ensure that Top electrode can be fastened on dead ring 22.
It should be noted that in the present embodiment, the quantity of block piece 23 is four, but
The invention is not limited in this, in actual applications, the quantity of block piece can also for one,
Two, three or more than five.
The top view of the reaction chamber that Fig. 4 A are provided for second embodiment of the invention.Fig. 4 B are
In Fig. 4 A along line B-B partial sectional view.See also Fig. 4 A and Fig. 4 B, this enforcement
Example equally on technique component 21, and is located at dead ring 22 compared with above-mentioned first embodiment
Around be provided with four block pieces 30, and the circumference along dead ring 22 is uniformly distributed, and
Each block piece 30 includes rubbing surface 301, the periphery wall of the rubbing surface 301 and dead ring 22
Fit.And, flange 302 is additionally provided with block piece 30, the flange 302 is relative
It is raised in the internal perisporium of block piece 30, and flange 302 is positioned at the top of dead ring 22 and absolutely
Edge ring 22 overlaps, and has vertical spacing H between flange 302 and dead ring 22.
The two phase can be hindered by producing between periphery wall of the rubbing surface 301 with dead ring 22
To the frictional force moved, can offset viscous between dead ring 22 and the sealing ring in Top electrode
With joint efforts, but in actual applications, the size of above-mentioned bonding force is a variable, can be according to insulation
Situations such as inside and outside differential pressure when time of contact, the Chamber vacuum of ring 22 and sealing ring and change, because
This, when above-mentioned bonding force is larger, it is possible that the periphery of rubbing surface 301 and dead ring 22
Frictional force between wall cannot be completely counterbalanced by the situation of bonding force, cause dead ring 22 or meeting
Depart from technique component 21 with sealing ring in the presence of bonding force.For this purpose, by above-mentioned convex
Edge 302, can cannot in the frictional force between the periphery wall of rubbing surface 301 and dead ring 22
When being completely counterbalanced by bonding force, stop that dead ring 22 departs from technique component 21.It is easy to understand, borrow
Help rubbing surface 301 offset at least a portion bonding force, this can play a part of buffering,
To avoid the interaction force between dead ring 22 and flange 302 very big, and damage dead ring
22.In addition, above-mentioned vertical spacing H can also play a part of buffering, it is to avoid dead ring 22
It is very big with the interaction force between flange 302, and damage dead ring 22.Preferably, vertically
The span of spacing H is in 0.5～1mm.
In the present embodiment, the upper surface outer edge in dead ring 22 is provided with the first groove
221, and the upper surface inside edge of technique component 21 is provided with the second groove 211 accordingly,
Block piece 23 is located in the second groove 211, and flange 302 is located in the first groove 221, and
Block piece 23 is fixedly connected with technique component 21 by trip bolt 24, and block piece 30
Maximum gauge no more than the first groove 221 and the depth of the second groove 211, i.e. make resistance
The upper surface of block piece 30 is not higher than the upper surface of technique component 21 and insulating part 22, so as to can
To ensure that Top electrode can be fastened on dead ring 22.
See also Fig. 5 A- Fig. 5 D, the reaction chamber and above-mentioned second that the present embodiment is provided
Embodiment is compared, and its difference is：Block piece 40 can be moved relative to technique component 21, with
Flange 402 is made to be moved to 22 equitant first position of dead ring (as shown in Figure 5 B
Position), or with the 22 non-overlapping second position (position as shown in Figure 5 D of dead ring
Put).
Specifically, two strip through-holes 401 are arranged at intervals with block piece 40, and every
Trip bolt 41 is provided with individual strip through-hole 401, the trip bolt 41 passes through strip through-hole
401 are threadedly coupled with technique component 21, so as to block piece 40 is fixed with technique component 21
Together.And, when trip bolt 41 is unscrewed, trip bolt 41 can be relative to technique groups
, along 401 relative movement of strip through-hole, in other words, block piece 40 can be relative to technique for part 21
Component 21 is moved along the long axis direction (substantially in dead ring 22 radially) of strip through-hole 401
It is dynamic, such that it is able to make flange 402 be moved to and 22 equitant first position of dead ring, or
Person and the 22 non-overlapping second position of dead ring.When trip bolt 41 is screwed, block piece
40 maintain static relative to technique component 21, such that it is able to flange 402 is fixed on above-mentioned
One position or the second position.
In the present embodiment, the upper surface outer edge in dead ring 22 is provided with the first groove
221, and the upper surface inside edge of technique component 21 is provided with the second groove 211 accordingly,
Block piece 40 is located in the second groove 211, and flange 402 is when first position is moved to,
In the first groove 221；Flange 402 when the second position is moved to, positioned at the second groove
In 211.And, the width of the first groove 221 is not less than the width of the second groove 211, with
Ensure that flange 402 can be moved in the first groove 221.
Preferably, the maximum gauge of block piece 40 is recessed no more than the first groove 221 and second
211 depth of groove, i.e. make the upper surface of block piece 40 be not higher than technique component 21 and insulation
The upper surface of part 22, thereby may be ensured that Top electrode can be fastened on dead ring 22.
Preferably, as shown in Figure 5A, on the upper surface of dead ring 22, and it is located at first
The inner side of groove 221 is provided with the first guiding arrow 42；And accordingly in technique component 21
Upper surface, and the outside of the second groove 211 is provided with the second guiding arrow 43；First
Be oriented to arrow 42 and second be oriented to the line of arrow 43 dead ring 22 radially when, the
One groove 221 is relative with the second groove 211.Arrow 42 and second is oriented to by first to be oriented to
Arrow 43, can play guide effect, in order to the first groove 221 and the second groove 211
Centering.
The top view of the reaction chamber that Fig. 6 is provided for fourth embodiment of the invention.Refer to figure
6, compared with above-mentioned each embodiment, its difference is the present embodiment：Block piece 60 includes ring
Body, the inner circumferential wall of the ring body are used as rubbing surface.That is, rubbing surface is the annular of closure
Structure, and match with the periphery wall of dead ring 22.
Preferably, in ring body can also flange (not shown), the flange relative to
The internal perisporium of block piece 60 is raised, and flange is located at top and the dead ring of dead ring 22
22 overlap, and have vertical spacing between flange and dead ring 22.
In actual applications, ring body can be fixed on technique component 21 by multiple trip bolts
On.
In sum, the reaction chamber that above-mentioned each embodiment of the present invention is provided, which is in technique
On component, and block piece is provided with around dead ring, the block piece includes and dead ring
The rubbing surface that contacts of periphery wall, for when Top electrode departs from technique component, with dead ring
Periphery wall between produce and can hinder the frictional force of the two relative motion, the frictional force can be offset
The active force for disengaging it from technique component that Top electrode applies to dead ring, such that it is able to avoid absolutely
Edge ring departs from technique component therewith together, such that it is able to protect dead ring.
Used as another technical scheme, the embodiment of the present invention provides a kind of semiconductor processing equipment,
Which includes reaction chamber, and the reaction chamber employs the anti-of above-mentioned each embodiment offer of the present invention
Answer chamber.
Semiconductor processing equipment provided in an embodiment of the present invention, which passes through above-mentioned each using the present invention
The above-mentioned reaction chamber that individual embodiment is provided, can be when Top electrode be opened, it is to avoid dead ring with
Depart from technique component together, such that it is able to protect dead ring.
It is understood that the principle that is intended to be merely illustrative of the present of embodiment of above and
Using illustrative embodiments, but the invention is not limited in this.For in the art
For those of ordinary skill, without departing from the spirit and substance in the present invention, can do
Go out various modifications and improvement, these modifications and improvement are also considered as protection scope of the present invention.
Claims (10)
1. a kind of reaction chamber, including technique component and it is arranged at the top of the technique component
Top electrode, and be additionally provided between the Top electrode and the technique component for completely cutting off the two
Dead ring, it is characterised in that on the technique component, and positioned at the week of the dead ring
Enclose and be provided with block piece, the block piece includes that what the periphery wall with the dead ring fitted rubs
Wiping face, for the Top electrode depart from the technique component when, the periphery with the dead ring
The frictional force that can hinder the two relative motion is produced between wall.
2. reaction chamber according to claim 1, it is characterised in that in the stop
Be additionally provided with flange on part, the flange is located at the top of the dead ring, and with the insulation
Ring overlaps, and has vertical spacing between the flange and the dead ring.
3. reaction chamber according to claim 2, it is characterised in that in the stop
Two strip through-holes are arranged at intervals with part, and fastening spiral shell are provided with each strip through-hole
Nail；
The trip bolt, can be logical along the bar shaped relative to the technique component when unscrewing
Hole relative movement, so that the flange is moved to and the equitant first position of the dead ring,
Or with the non-overlapping second position of the dead ring；
The trip bolt makes the block piece solid relative to the technique component when screwing
It is fixed motionless.
4. reaction chamber according to claim 2, it is characterised in that it is described it is vertical between
Away from span in 0.5～1mm.
5. reaction chamber according to claim 3, it is characterised in that in the insulation
The upper surface outer edge of ring is provided with the first groove, and accordingly in the upper of the technique component
Surface inside edge is provided with the second groove, and the width of first groove is not less than described second
The width of groove；
The block piece is located in second groove, and the flange is being moved to described the
During one position, in first groove.
6. reaction chamber according to claim 5, it is characterised in that the block piece
Maximum gauge no more than first groove and the depth of second groove.
7. reaction chamber according to claim 5, it is characterised in that in the insulation
On the upper surface of ring, and the first guiding arrow is provided with the inside of first groove；And
Accordingly in the upper surface of the technique component, and it is provided with the outside of second groove
Second is oriented to arrow；
Described first is oriented to arrow and second is oriented to the radial direction of the line in the dead ring of arrow
When upper, first groove is relative with second groove.
8. reaction chamber according to claim 1, it is characterised in that the block piece
Quantity for multiple, and the circumference along the dead ring is uniformly distributed.
9. reaction chamber according to claim 1, it is characterised in that the block piece
Including ring body, the inner circumferential wall of the ring body is used as the rubbing surface.
10. a kind of semiconductor processing equipment, which includes reaction chamber, it is characterised in that described
Reaction chamber employs the reaction chamber described in claim 1-9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510611653.8A CN106548959B (en) | 2015-09-23 | 2015-09-23 | Reaction chamber and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510611653.8A CN106548959B (en) | 2015-09-23 | 2015-09-23 | Reaction chamber and semiconductor processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106548959A true CN106548959A (en) | 2017-03-29 |
| CN106548959B CN106548959B (en) | 2020-01-03 |
Family
ID=58365050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510611653.8A Active CN106548959B (en) | 2015-09-23 | 2015-09-23 | Reaction chamber and semiconductor processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106548959B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108695131A (en) * | 2017-04-05 | 2018-10-23 | 北京北方华创微电子装备有限公司 | Reaction chamber |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100849179B1 (en) * | 2007-01-10 | 2008-07-30 | 삼성전자주식회사 | Structure for protecting gap formation and plasma processing equipment having the same |
| CN103887136A (en) * | 2012-12-20 | 2014-06-25 | 上海华虹宏力半导体制造有限公司 | Etching cavity suitable for metal dry method etching semiconductor equipment |
| CN104916572A (en) * | 2014-03-14 | 2015-09-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Bearing device and plasma processing device |
-
2015
- 2015-09-23 CN CN201510611653.8A patent/CN106548959B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100849179B1 (en) * | 2007-01-10 | 2008-07-30 | 삼성전자주식회사 | Structure for protecting gap formation and plasma processing equipment having the same |
| CN103887136A (en) * | 2012-12-20 | 2014-06-25 | 上海华虹宏力半导体制造有限公司 | Etching cavity suitable for metal dry method etching semiconductor equipment |
| CN104916572A (en) * | 2014-03-14 | 2015-09-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Bearing device and plasma processing device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108695131A (en) * | 2017-04-05 | 2018-10-23 | 北京北方华创微电子装备有限公司 | Reaction chamber |
| CN108695131B (en) * | 2017-04-05 | 2020-04-28 | 北京北方华创微电子装备有限公司 | Reaction chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106548959B (en) | 2020-01-03 |
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