CN106533438A - Terahertz frequency synthesizer realized by adopting CMOS process - Google Patents
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- H—ELECTRICITY
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- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/16—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop
- H03L7/18—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using a frequency divider or counter in the loop
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Abstract
The invention discloses a terahertz frequency synthesizer realized by adopting a CMOS process, which comprises a voltage controlled oscillator generating terahertz LO signals, a first-stage injection-locked frequency divider and a second-stage injection-locked frequency divider for frequency division, and a phase-locked loop for locking a reached set frequency, wherein the voltage controlled oscillator, the first-stage injection-locked frequency divider, the second-stage injection-locked frequency divider and the phase-locked loop are in serial connection sequentially; and the feedback output end of the phase-locked loop is connected with the feedback input end of the voltage controlled oscillator. According to the terahertz frequency synthesizer realized by adopting the CMOS process disclosed by the invention, the standard CMOS process is adopted for realization, the integration is high, the cost is low, mass production is facilitated, the limitation of poor working performance near a cutoff frequency of the CMOS process is overcome, and the design of the terahertz frequency synthesizer is realized.
Description
Technical field
The present invention relates to a kind of Terahertz frequency synthesizer.The Terahertz that more particularly to a kind of employing CMOS technology is realized
Frequency synthesizer.
Background technology
In recent years, high-speed radiocommunication system is just constantly towards higher frequency, bandwidth, more high integration and more inexpensive
Develop in direction.Terahertz frequency range (300GHz-3THz), between microwave and infrared ray, is not uniquely obtained in electromagnetic spectrum
Obtain last wave spectrum relatively studied comprehensively and be used very well interval, in today that communication band is increasingly in short supply, to terahertz
Hereby the research of communication techniques is significant.THz wave communication technology is widely used in the various aspects lived, due to
Its own peculiar property having and the position in spectrum make THz wave military in communication, electronic countermeasure, radar, electromagnetism
The fields such as device, astronomy, medical imaging, Non-Destructive Testing, environmental monitoring and safety inspection have the prospect of being widely applied.
In recent years, with the continuous reduction of characteristic size, deep-submicron CMOS process and its MOSFET characteristic frequency
Jing reaches more than 200GHz so that realize that using CMOS technology the high frequency analog circuits of ghz band are possibly realized.Silicon CMOS,
In numerous techniques such as BiCMOS, bipolar process, GaAs MESFET, heterojunction bipolar transistor (HBT), GeSi devices, although silicon
The high frequency performance and noiseproof feature of CMOS be not it is best, but as its technique is the most ripe, cost is minimum, power consumption is minimum, should
With also the most extensively, therefore CMOS RF ICs are the trend for developing in recent years.With the development of REID, generation
The research worker of various countries of boundary has carried out numerous studies in terms of the design and making of CMOS RF ICs, makes CMOS radio frequency collection
Performance into circuit is improved constantly.With the progress of silicon-based technology, silicon-based technology can be supported to realize the integrated electricity of Terahertz communication
Road, but the working frequency range of up to hundreds of GHz makes the realization of Terahertz communication integrated circuit face series of challenges.
Why traditional digital CMOS process technology is without in superelevation frequency circuit (frequency is more than 100GHz) application aspect
Taken into full account, be because that CMOS oscillator circuit is subject to the cut-off frequency (f of deviceT) and maximum oscillation frequency (fmax) limit
System.However, the development of Technology causes device size constantly to reduce, the operating frequency of device is continuously increased, and makes in CMOS works
The frequency range that field-effect transistor cut-off frequency is close to even up to Terahertz is enabled under skill so that adopt CMOS technology
The circuit that realization works under THz wave frequency range is possibly realized.
The THz wave circuit realized using CMOS technology has been studied, but is because CMOS technology device.
The content of the invention
The technical problem to be solved is to provide a kind of integrated level height, low cost, is easy to adopting for large-scale production
The Terahertz frequency synthesizer realized with CMOS technology
The technical solution adopted in the present invention is：The Terahertz frequency synthesizer that a kind of employing CMOS technology is realized, including
Have what is be sequentially connected in series：The voltage controlled oscillator of Terahertz LO signals is produced, for the first order injection locking point for being divided
Frequency device and second level injection locking frequency divider, and enter line-locked phaselocked loop, the lock phase for the frequency to reaching setting
The feedback output end of ring connects the feedback input end of the voltage controlled oscillator.
Described voltage controlled oscillator includes the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, first resistor and second resistance, wherein,
The grid of first metal-oxide-semiconductor passes sequentially through the grid of the 3rd inductance and the 4th the second metal-oxide-semiconductor of inductance connection, a MOS
The grid of pipe is also connected one end of variable capacitance and one end of the 5th inductance respectively by the 3rd electric capacity together with source electrode, and described
The drain electrode of one metal-oxide-semiconductor connects the first order by the first inductance connection power supply, and by the first electric capacity to output head anode
The input of injection locking frequency divider, the grid of second metal-oxide-semiconductor is also connected together with source electrode respectively by the 4th electric capacity can
Become one end of the other end and the 6th inductance of electric capacity, the drain electrode of second metal-oxide-semiconductor passes through the second inductance connection power supply, with
And by the input of the second electric capacity to negative pole of output end connection first order injection locking frequency divider, the 3rd inductance and the 4th
Inductance be connected end pass sequentially through first resistor and bias voltage ground connection, the other end and the 6th inductance of the 5th inductance it is another
One end connects the other end ground connection of one end of second resistance and the 5th electric capacity, the second resistance and the 5th electric capacity.
Described first order injection locking frequency divider includes the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th MOS
Pipe, the 7th metal-oxide-semiconductor and the 8th metal-oxide-semiconductor, wherein, the grid connection externally fed power supply of the 3rd metal-oxide-semiconductor, the source electrode of the 3rd metal-oxide-semiconductor
Connect a taps and c taps on the 9th inductance with drain electrode respectively, the grid of the 4th metal-oxide-semiconductor connects the b in the middle part of the 9th inductance
Tap, and the outfan of the described voltage controlled oscillator of input (Prot1) connection is constituted, the source electrode of the 4th metal-oxide-semiconductor connects respectively
Meet one end of the 9th inductance, the grid of the 5th metal-oxide-semiconductor, the drain electrode of the 7th metal-oxide-semiconductor, and the grid of the 8th metal-oxide-semiconductor, the 4th MOS
The drain other end of the 9th inductance of connection, the grid of the 6th metal-oxide-semiconductor, the drain electrode of the 8th metal-oxide-semiconductor, and the 7th MOS respectively of pipe
The source electrode of the grid of pipe, the 7th metal-oxide-semiconductor and the 8th metal-oxide-semiconductor is by the first current source ground connection, the 5th metal-oxide-semiconductor and the 6th MOS
The source electrode of pipe is grounded by the second current source, and the drain electrode of the 5th metal-oxide-semiconductor is by the 7th inductance connection power supply, and constitutes defeated
Go out the input of end connection second level injection locking frequency divider, the drain electrode of the 6th metal-oxide-semiconductor is powered by the 8th inductance connection
Power supply.
Described second level injection locking frequency divider includes the 9th metal-oxide-semiconductor, the tenth metal-oxide-semiconductor, the 11st metal-oxide-semiconductor and transformation
Device, wherein, the grid of the 11st metal-oxide-semiconductor constitutes the outfan that input connects the first order injection locking frequency divider,
The two ends of the source electrode and drain electrode difference connection transformer primary coil of the 11st metal-oxide-semiconductor, the transformer secondary coil
One end constitutes the input that the negative or positive electrode of outfan connects the phaselocked loop, and the end is also respectively connected with the leakage of the 9th metal-oxide-semiconductor
Pole and the grid of the tenth metal-oxide-semiconductor, the other end of the transformer secondary coil are constituted described in the negative pole or positive pole connection of outfan
The input of phaselocked loop, the end be also respectively connected with the tenth metal-oxide-semiconductor drain electrode and the 9th metal-oxide-semiconductor grid, the 9th metal-oxide-semiconductor and
The source ground of the tenth metal-oxide-semiconductor.
The Terahertz frequency synthesizer that a kind of employing CMOS technology of the present invention is realized, using the CMOS technology reality of standard
It is existing, there are integrated level height, low cost, be easy to large-scale production.CMOS technology cut-off frequency work nearby is also overcomed simultaneously
Make the restriction of poor performance, realize the design of Terahertz frequency synthesizer.The invention has the advantages that：
The wavelength of 1.THz ripples is between microwave and infrared light, and it and interacting for material have unique physical machine
The characteristics of making, and present many new.Due to 0.3THz-10THz frequency ranges THz wave can very it is strong penetrate as plastics,
The one class material such as paper, timber, human body, air, therefore it can be widely applied to security scanning, radio astronomy, biological sensing, life
Are produced from the fields such as monitoring, concrete classification can include that mail scanning, stationery production, Plastic Welding detection, ancient painting analysis, human body are saturating
Depending on the detection of, food quality, skin carcinoma classification etc..
2. the frequency synthesizer can be operated under Terahertz frequency, can be overcome and be close to device cut-off frequency band due to frequency
The frequency limitation come so that output frequency is brought up on device actual operating frequency.
3. the power consumption of the design, size have clear improvement relative to traditional circuit.
In sum, power amplifier structure proposed by the present invention and implementation have a good application prospect.
Description of the drawings
Fig. 1 is the composition block diagram of the Terahertz frequency synthesizer that a kind of employing CMOS technology of the invention is realized；
Fig. 2 is the circuit theory diagrams of voltage controlled oscillator in the present invention；
Fig. 3 is the circuit theory diagrams of first order injection locking frequency divider in the present invention；
Fig. 4 is the circuit theory diagrams of second level injection locking frequency divider in the present invention.
Specific embodiment
With reference to the Terahertz frequency synthesizer that embodiment and accompanying drawing are realized to a kind of employing CMOS technology of the present invention
It is described in detail.
The Terahertz frequency synthesizer that a kind of employing CMOS technology of the present invention is realized, be by Terahertz voltage controlled oscillator and
ILFDs and divider chain composition.Wherein voltage controlled oscillator is used for being met the output signal of Terahertz frequency；Subsequent
ILFDs (injection locking frequency dividers) and divider chain adjust signal to suitable frequency.Its
Rear end carries out single frequency and PGC demodulation by phaselocked loop.
Due to cut-off frequency and the restriction of maximum oscillation frequency of CMOS technology, determine near or above cut-off frequency
Frequency under, active device performance greatly deteriorates or cannot normal work.And Terahertz frequency range is still within CMOS technology
On cut-off frequency, therefore the active device in the integrated circuit of CMOS technology is not directly applicable Terahertz frequency range.This
Bright employing fundamental frequency signal through power separate, multiple signals path respectively through power amplifier, after the power amplification of generation
The signal for obtaining even harmonics frequencies is no longer directly entered by active device after frequency multiplication by signal through passive device frequency multiplication
Row power combing is converted with impedance, so as to avoid the deterioration of active device performance under too high operating frequency, is finally given too
Output signal in hertz frequency range.
As shown in figure 1, the Terahertz frequency synthesizer that a kind of employing CMOS technology of the present invention is realized, includes and goes here and there successively
Connection connection：The voltage controlled oscillator 1 of Terahertz LO signals is produced, for 2 He of first order injection locking frequency divider for being divided
Second level injection locking frequency divider 3, and enter line-locked phaselocked loop 4 for the frequency to reaching setting, the phaselocked loop 4
Feedback output end connects the feedback input end of the voltage controlled oscillator 1.
First by voltage controlled oscillator produce Terahertz LO signals, agitator output adjustable frequency scope be 118.6GHz～
121GHz.Subsequently signal is carried out into first order injection locking frequency divider and second level injection locking frequency divider and divider chain
Frequency dividing, finally enters phaselocked loop and locks to reaching desired frequency.The present invention finally realizes that frequency is 21GHz,
Phase noise at 1MHz is -74dBc/Hz, and DC power is 174mW.
As shown in Fig. 2 described voltage controlled oscillator 1 include the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, first resistor R1 with
And second resistance R2, wherein, the grid of the first metal-oxide-semiconductor M1 passes sequentially through the 3rd inductance L3 and the 4th inductance L4 connections second
The grid of metal-oxide-semiconductor M2, the grid of the first metal-oxide-semiconductor M1 are also connected variable capacitance respectively by the 3rd electric capacity C3 together with source electrode
One end of C6 and one end of the 5th inductance L5, the drain electrode of the first metal-oxide-semiconductor M1 connect power supply by the first inductance L1
VDD, and connect the input of first order injection locking frequency divider 2 by the first electric capacity C1 to output head anode Prot1, it is described
The grid of the second metal-oxide-semiconductor M2 is also connected the other end of variable capacitance C6 and the 6th electric respectively by the 4th electric capacity C4 together with source electrode
One end of sense L6, the drain electrode of the second metal-oxide-semiconductor M2 connect power supply VDD by the second inductance L2, and electric by second
Hold the input of C2 to negative pole of output end Prot1 connections first order injection locking frequency divider 2, the 3rd inductance L3 and the 4th electric
The sense L4 ends that are connected pass sequentially through first resistor R1 and bias voltage V1 ground connection, the other end of the 5th inductance L5 and the 6th electric
The other end of sense L6 connects the another of one end of second resistance R2 and the 5th electric capacity C5, second resistance R2 and the 5th electric capacity C5
End ground connection.
Direct current biasing is mainly by the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, first resistor R1, second resistance R2 and bias voltage
V1 and resistance R2 determines that the value of first resistor R1 should be little as far as possible, on the one hand can reduce voltage pulsation, on the other hand
This resistance can regard the resistance connected with inductance as, and larger resistance can deteriorate the Q-value of inductance, affect the phase place of circuit to make an uproar
Acoustic performance, second resistance R2 function as a current source, and on the one hand it will set up direct current biasing, while which will be ensured
The noise of introducing can not be excessive, therefore the selection of second resistance R2 resistance is also required to be traded off according to performance requirement.Through setting
Meter emulation first resistor R1 and second resistance R2 should be respectively 20 Ω and 52 Ω.Compared with traditional design, this method can be
Broader tuning range is obtained in predetermined fundamental frequency, and can reduce the deterioration of quality factor q.
The voltage controlled oscillator of front portion may produce DC voltage mismatch, it is therefore desirable to add first order injection locking point
Frequency device 2 and second level injection locking frequency divider 3 solve this problem.
As shown in figure 3, described first order injection locking frequency divider 2 include the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4,
Five metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6, the 7th metal-oxide-semiconductor M7 and the 8th metal-oxide-semiconductor M8, wherein, the grid connection of the 3rd metal-oxide-semiconductor M3 is outside
The source electrode of power supply Vsw2, the 3rd metal-oxide-semiconductor M3 and drain electrode connect a taps and c taps on the 9th inductance L9 respectively, and described the
The grid of four metal-oxide-semiconductor M4 connects the b taps in the middle part of the 9th inductance L9, and constitutes described voltage-controlled of input Prot1 connections and shake
Swing the outfan of device 1, the source electrode of the 4th metal-oxide-semiconductor M4 connect respectively one end of the 9th inductance L9, the grid of the 5th metal-oxide-semiconductor M5,
The drain electrode of seven metal-oxide-semiconductor M7, and the grid of the 8th metal-oxide-semiconductor M8, the drain electrode of the 4th metal-oxide-semiconductor M4 connect the another of the 9th inductance L9 respectively
One end, the grid of the 6th metal-oxide-semiconductor M6, the drain electrode of the 8th metal-oxide-semiconductor M8, and the grid of the 7th metal-oxide-semiconductor M7, the 7th metal-oxide-semiconductor M7 and
The source electrode of the 8th metal-oxide-semiconductor M8 is grounded by the first current source I1, and the source electrode of the 5th metal-oxide-semiconductor M5 and the 6th metal-oxide-semiconductor M6 passes through
Second current source I2 is grounded, and the drain electrode of the 5th metal-oxide-semiconductor M5 connects power supply VDD by the 7th inductance L7, and constitutes output
End Prot2 connects the input of second level injection locking frequency divider 3, and the drain electrode of the 6th metal-oxide-semiconductor M6 passes through the 8th inductance L8
Connection power supply VDD.
First order injection locking frequency divider 2 receives the output that voltage controlled oscillator above is provided, and wherein resonant inductance L9 will
The error control of frequency within 1GHz, due to the operating frequency of frequency divider relatively low (94GHz), therefore the inductance of resonant inductance L9
Value should be controlled in 120pH, and quality factor q is also required to control in acceptable scope.
As shown in figure 4, described second level injection locking frequency divider 3 include the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10,
11st metal-oxide-semiconductor M11 and transformator T, wherein, the grid of the 11st metal-oxide-semiconductor M11 is constituted described in input Prot2 connections
The outfan of first order injection locking frequency divider 2, the source electrode of the 11st metal-oxide-semiconductor M11 and drain electrode are respectively at the beginning of connection transformer T
The two ends of level coil, one end of the transformator T secondary coils constitute the negative or positive electrode connection lock phase of outfan Prot3
The input of ring 4, the end are also respectively connected with the drain electrode of the 9th metal-oxide-semiconductor M9 and the grid of the tenth metal-oxide-semiconductor M10, transformator T time
The other end of level coil constitutes the input that the negative pole or positive pole of outfan Prot3 connects the phaselocked loop 4, and the end also connects respectively
Drain electrode and the grid of the 9th metal-oxide-semiconductor M9 of the tenth metal-oxide-semiconductor M10 is connect, the source electrode of the 9th metal-oxide-semiconductor M9 and the tenth metal-oxide-semiconductor M10 connects
Ground.
Second level injection locking frequency divider 3 is carried out for the terahertz signal for exporting first order injection locking frequency divider 2
1/12 frequency dividing.
Claims (4)
1. the Terahertz frequency synthesizer that a kind of employing CMOS technology is realized, it is characterised in that include what is be sequentially connected in series：
The voltage controlled oscillator (1) of Terahertz LO signals is produced, for the first order injection locking frequency divider (2) that divided and the second level
Injection locking frequency divider (3), and enter line-locked phaselocked loop (4) for the frequency to reaching setting, phaselocked loop (4)
Feedback output end connects the feedback input end of voltage controlled oscillator (1).
2. the Terahertz frequency synthesizer that a kind of employing CMOS technology according to claim 1 is realized, it is characterised in that institute
The voltage controlled oscillator (1) stated includes the first metal-oxide-semiconductor (M1), the second metal-oxide-semiconductor (M2), first resistor (R1) and second resistance
(R2), wherein, the grid of the first metal-oxide-semiconductor (M1) passes sequentially through the 3rd inductance (L3) and the 4th inductance (L4) connection second
The grid of metal-oxide-semiconductor (M2), also by the 3rd electric capacity (C3), being connected together with source electrode respectively can for the grid of the first metal-oxide-semiconductor (M1)
Become one end of electric capacity (C6) and one end of the 5th inductance (L5), the drain electrode of the first metal-oxide-semiconductor (M1) passes through the first inductance (L1)
Connection power supply (VDD), and first order injection locking point is connected by the first electric capacity (C1) to output head anode (Prot1)
The input of frequency device (2), also by the 4th electric capacity (C4), being connected together with source electrode respectively can for the grid of the second metal-oxide-semiconductor (M2)
Become one end of the other end and the 6th inductance (L6) of electric capacity (C6), the drain electrode of the second metal-oxide-semiconductor (M2) passes through the second inductance
(L2) connect power supply (VDD), and first order injection lock is connected by the second electric capacity (C2) to negative pole of output end (Prot1)
Determine the input of frequency divider (2), the 3rd inductance (L3) end that is connected with the 4th inductance (L4) passes sequentially through first resistor
(R1) it is grounded with bias voltage (V1), the other end connection second of the other end and the 6th inductance (L6) of the 5th inductance (L5)
The other end ground connection of one end of resistance (R2) and the 5th electric capacity (C5), second resistance (R2) and the 5th electric capacity (C5).
3. the Terahertz frequency synthesizer that a kind of employing CMOS technology according to claim 1 is realized, it is characterised in that institute
The first order injection locking frequency divider (2) stated include the 3rd metal-oxide-semiconductor (M3), the 4th metal-oxide-semiconductor (M4), the 5th metal-oxide-semiconductor (M5),
Six metal-oxide-semiconductors (M6), the 7th metal-oxide-semiconductor (M7) and the 8th metal-oxide-semiconductor (M8), wherein, the grid connection externally fed of the 3rd metal-oxide-semiconductor (M3)
Power supply (Vsw2), the source electrode of the 3rd metal-oxide-semiconductor (M3) and drain electrode connect a taps and c taps on the 9th inductance (L9) respectively, described
The grid of the 4th metal-oxide-semiconductor (M4) connects the b taps in the middle part of the 9th inductance (L9), and it is described to constitute input (Prot1) connection
Voltage controlled oscillator (1) outfan, the source electrode of the 4th metal-oxide-semiconductor (M4) connects one end of the 9th inductance (L9), the 5th MOS respectively
The grid of pipe (M5), the drain electrode of the 7th metal-oxide-semiconductor (M7), and the grid of the 8th metal-oxide-semiconductor (M8), the drain electrode of the 4th metal-oxide-semiconductor (M4)
The other end of the 9th inductance (L9) of connection, the grid of the 6th metal-oxide-semiconductor (M6), the drain electrode of the 8th metal-oxide-semiconductor (M8) respectively, and the 7th
The source electrode of the grid of metal-oxide-semiconductor (M7), the 7th metal-oxide-semiconductor (M7) and the 8th metal-oxide-semiconductor (M8) is grounded by the first current source (I1), described
The source electrode of the 5th metal-oxide-semiconductor (M5) and the 6th metal-oxide-semiconductor (M6) is grounded by the second current source (I2), the drain electrode of the 5th metal-oxide-semiconductor (M5)
Power supply (VDD) is connected by the 7th inductance (L7), and constitutes outfan (Prot2) connection second level injection locking frequency dividing
The input of device (3), the drain electrode of the 6th metal-oxide-semiconductor (M6) connect power supply (VDD) by the 8th inductance (L8).
4. the Terahertz frequency synthesizer that a kind of employing CMOS technology according to claim 1 is realized, it is characterised in that institute
The second level injection locking frequency divider (3) stated includes the 9th metal-oxide-semiconductor (M9), the tenth metal-oxide-semiconductor (M10), the 11st metal-oxide-semiconductor
(M11) and transformator (T), wherein, the grid of the 11st metal-oxide-semiconductor (M11) constitutes input (Prot2) and connects described first
The outfan of level injection locking frequency divider (2), the source electrode of the 11st metal-oxide-semiconductor (M11) and drain electrode difference connection transformer (T)
The two ends of primary coil, one end of transformator (T) secondary coil constitute the negative or positive electrode connection institute of outfan (Prot3)
The input of phaselocked loop (4) is stated, the end is also respectively connected with the drain electrode of the 9th metal-oxide-semiconductor (M9) and the grid of the tenth metal-oxide-semiconductor (M10),
The other end of transformator (T) secondary coil constitutes the negative pole or positive pole of outfan (Prot3) and connects phaselocked loop (4)
Input, the end are also respectively connected with the drain electrode of the tenth metal-oxide-semiconductor (M10) and the grid of the 9th metal-oxide-semiconductor (M9), the 9th metal-oxide-semiconductor
(M9) and the tenth metal-oxide-semiconductor (M10) source ground.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107528542A (en) * | 2017-08-24 | 2017-12-29 | 天津大学 | A kind of mm wave voltage controlled oscillator realized using CMOS technology |
| CN109617527A (en) * | 2018-12-18 | 2019-04-12 | 东南大学 | The adjustable broadband millimeter-wave oscillator of center resonant frequency |
| CN110784178A (en) * | 2019-10-28 | 2020-02-11 | 东南大学 | Broadband injection locking frequency multiplier |
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| US5250953A (en) * | 1976-11-19 | 1993-10-05 | The Marconi Company Limited | Tracking radar systems |
| CN103080768A (en) * | 2010-09-09 | 2013-05-01 | 德克萨斯仪器股份有限公司 | Terahertz phased array system |
| CN103607201A (en) * | 2013-11-27 | 2014-02-26 | 中国科学院微电子研究所 | Injection locking frequency divider with wide locking range |
| CN105071778A (en) * | 2015-09-17 | 2015-11-18 | 天津大学 | CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process-based terahertz power amplifier |
| CN105515579A (en) * | 2015-12-08 | 2016-04-20 | 电子科技大学 | Injection locked frequency divider based on Lange coupler feedback structure |
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| US5250953A (en) * | 1976-11-19 | 1993-10-05 | The Marconi Company Limited | Tracking radar systems |
| CN103080768A (en) * | 2010-09-09 | 2013-05-01 | 德克萨斯仪器股份有限公司 | Terahertz phased array system |
| CN103607201A (en) * | 2013-11-27 | 2014-02-26 | 中国科学院微电子研究所 | Injection locking frequency divider with wide locking range |
| CN105071778A (en) * | 2015-09-17 | 2015-11-18 | 天津大学 | CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process-based terahertz power amplifier |
| CN105515579A (en) * | 2015-12-08 | 2016-04-20 | 电子科技大学 | Injection locked frequency divider based on Lange coupler feedback structure |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107528542A (en) * | 2017-08-24 | 2017-12-29 | 天津大学 | A kind of mm wave voltage controlled oscillator realized using CMOS technology |
| CN109617527A (en) * | 2018-12-18 | 2019-04-12 | 东南大学 | The adjustable broadband millimeter-wave oscillator of center resonant frequency |
| CN109617527B (en) * | 2018-12-18 | 2023-01-31 | 东南大学 | Broadband millimeter wave oscillator with adjustable center resonance frequency |
| CN110784178A (en) * | 2019-10-28 | 2020-02-11 | 东南大学 | Broadband injection locking frequency multiplier |
| CN110784178B (en) * | 2019-10-28 | 2021-05-11 | 东南大学 | Broadband injection locking frequency multiplier |
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