CN102594342A - Voltage-controlled oscillator - Google Patents
Voltage-controlled oscillator Download PDFInfo
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- CN102594342A CN102594342A CN2012100505026A CN201210050502A CN102594342A CN 102594342 A CN102594342 A CN 102594342A CN 2012100505026 A CN2012100505026 A CN 2012100505026A CN 201210050502 A CN201210050502 A CN 201210050502A CN 102594342 A CN102594342 A CN 102594342A
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Abstract
The invention discloses a voltage-controlled oscillator. The voltage-controlled oscillator can effectively inhibit spurious frequency caused by power supply modulation as well as the spurious frequency introduced by a phase-lock loop, wherein the spurious frequency introduced by the phase-lock loop comprises phase identifier leakage stray, frequency division stray, stray introduced by a reference source and the like. In addition, the voltage-controlled oscillator also has high power supply interference resistance, so that the phase noise of the voltage-controlled oscillator can be improved. At the same time, the output power of the voltage-controlled oscillator can be adjusted according to needs through a single apparatus, and other performance indexes are not affected.
Description
Technical field
The present invention relates to electron trade electronic devices and components design field, relate in particular to a kind of voltage controlled oscillator.
Background technology
In fields such as detection, communication, radio and television, it is very important producing high-quality local oscillation signal.To communication system, the performance of radar-probing system has great influence from frequency stability, phase noise and the spurious frequency (spur) of local oscillation signal.In the communication system, channel is intensive in modern times, and modulation system is complicated, for reducing the error rate of signal, improves receiver selectivity, requires the phase noise of local oscillation signal to get well.In the low-altitude detection of Doppler radar; Face very strong ground clutter and disturb, if the phase noise of frequency source is not high, clutter that receives and useful signal get into receiver together; After mixing, low-speed motion echo signal and noise signal will be difficult to make a distinction.
An effective method that improves the local oscillation signal stability is that voltage controlled oscillator is advanced horizontal lock, but phase-locked loop can only suppress, can not improve the outer phase noise of loop band to the phase noise in the loop band.In addition, adding adverse consequences that phase-locked loop brings is to have increased spurious frequency (phase demodulation is spuious, frequency division is spuious and reference source spuious etc.).In addition, it is spuious that power filter totally can not bring modulation yet; Simultaneously peripheral interference source possibly bring additional spuious.
The phase demodulation of phase-locked loop is spuious can be improved through the maximum current that improves phase discriminator, simultaneously because phase demodulation frequency is much higher than loop bandwidth usually, thereby can be through in addition filtering of loop filter; For solving the total problem of frequency step precision, adopt decimal frequency divider usually, but caused serious fractional frequency division spuious again simultaneously, adopt ∑-Δ modulation technique to solve on the engineering.After these series of measures, about the spuious in addition common-60dBc of voltage controlled oscillator output.
Fig. 1 is the structural representation of prior art voltage controlled oscillator.As shown in Figure 1, this voltage controlled oscillator is made up of prime oscillating part and back level amplifier section.Oscillating part adopts the form of emitter-base bandgap grading output, the series parallel resonance network that resonating device is made up of varactor D1, capacitor C 3 and transmission line T1 (being equivalent to inductance); Feedback network is made up of capacitor C 1, C2, L1, R3; Dc bias circuit is delivered to the base stage of bipolar junction transistor BJT (Q1) after by resistance R 2, R4 dividing potential drop, then behind emitter-base bandgap grading feedback resistance R3 by inductance L 1 ground connection, power supply carries out filtering by C6.Oscillator signal is by the output of the emitter-base bandgap grading of BJT (Q1), and the output signal ratio of this oscillator design mode is less, thereby the back has added an amplifying stage (Q2) signal is amplified.
The applicant recognizes that there is following technological deficiency in the prior art voltage controlled oscillator: the spurious frequency that can not effectively introduce phase-locked loop suppresses, and the spurious frequency amplitude of output is higher.
Summary of the invention
The technical problem that (one) will solve
For solving above-mentioned one or more problems, the invention provides a kind of voltage controlled oscillator, to suppress the interference of spurious frequency.
(2) technical scheme
According to an aspect of the present invention, a kind of voltage controlled oscillator is provided.This voltage controlled oscillator comprises: the LC resonant circuit is used to provide oscillator signal; The collector bias circuit; Its input is connected with peripheral power supply, is used for this power supply is carried out exporting feedback amplifier to after the Filtering Processing, comprising: the 3rd resistance; Its first end is connected to power supply, and its second end is connected to the collector electrode of bipolar junction transistor through second inductance; The 3rd electric capacity, its first end is connected to power supply, and second end is connected to ground; The 4th electric capacity, its first end is connected to second end of the 3rd resistance, and second end is connected to ground, and the 3rd electric capacity, the 3rd resistance, the 4th electric capacity are formed π type RC filtering current limliting network; Feedback amplifier; Its input is connected with first output of LC resonant circuit and collector bias circuit respectively; Be used to utilize the power supply that carries out after the Filtering Processing that oscillator signal is amplified back output; Comprise: bipolar junction transistor, its collector electrode is connected to the collector bias circuit, and is connected to the output of voltage controlled oscillator through the 11 partiting dc capacitor; Its base stage is connected to the LC resonant circuit through the 8th electric capacity; The 5th inductance and the tenth electric capacity of parallel connection, its first end is connected to the emitter of bipolar junction transistor, and is connected to the base stage of the emitter of bipolar junction transistor through the 9th electric capacity; Its second end ground connection.
According to an aspect of the present invention, a kind of voltage controlled oscillator also is provided.This voltage controlled oscillator comprises: the LC resonant circuit is used to provide oscillator signal; The drain bias circuit; Its input is connected with peripheral power supply, is used for this power supply is carried out exporting feedback amplifier to after the Filtering Processing, comprising: the 3rd resistance; Its first end is connected to power supply, and its second end is connected to the drain electrode of bipolar junction transistor through second inductance; The 3rd electric capacity, its first end is connected to power supply, and second end is connected to ground; The 4th electric capacity, its first end is connected to second end of the 3rd resistance, and second end is connected to ground, and the 3rd electric capacity, the 3rd resistance, the 4th electric capacity are formed π type RC filtering current limliting network; Feedback amplifier; Its input is connected with first output of LC resonant circuit and drain bias circuit respectively; Be used to utilize the power supply that carries out after the Filtering Processing that oscillator signal is amplified back output; Comprise: FET, its drain electrode is connected to the drain bias circuit, and is connected to the output of voltage controlled oscillator through the 11 partiting dc capacitor; Its grid is connected to the LC resonant circuit through the 8th electric capacity; The 5th inductance and the tenth electric capacity of parallel connection, its first end is connected to the emitter of bipolar junction transistor, and is connected to the grid of the emitter of bipolar junction transistor through the 9th electric capacity; Its second end ground connection.
(3) beneficial effect
Can find out that from technique scheme spuious inhibition voltage-controlled oscillator circuit of the present invention has following beneficial effect:
1, among the present invention, collector electrode (or drain electrode) has adopted π type RC electric source filter circuit, and this π type RC electric source filter circuit is made up of the 3rd capacitor C 3, the 3rd resistance R 3, the 4th capacitor C 4.Through π type RC electric source filter circuit, power supply noise is effectively suppressed, and the phase noise that voltage controlled oscillator is caused by power supply noise and obtain bigger inhibition with spuious has good anti-power supply interference performance.
2, among the present invention, base stage (or grid) has adopted π type RC electric source filter circuit, and this π type RC electric source filter circuit is made up of first capacitor C 1, first resistance R 1, second capacitor C 2.Through π type RC electric source filter circuit, power supply noise is effectively suppressed, and the phase noise that voltage controlled oscillator is caused by power supply noise and obtain bigger inhibition with spuious has good anti-power supply interference performance.
3, among the present invention; Base stage (or grid) has adopted the low-frequency disturbance bypass structure of being made up of first inductance L 1, second capacitor C 2; The low-frequency disturbance of being introduced by VT and some low frequencies of phase-locked loop self are spuious, and are spuious like phase demodulation, frequency division is spuious and reference source spuious etc., by the bypass largely of this structure; Prevent to be mixed on the output spectrum of voltage controlled oscillator after it from getting into BJT, the phase noise and spuious of voltage controlled oscillator is improved;
4, among the present invention, owing to adopt collector electrode (or drain electrode) output, emitter does not add the structure of feedback resistance, thereby makes the power output of voltage controlled oscillator can reach maximum, and promptly collector voltage is the highest, has the maximum power fan-out capability; And the power of the feedback resistance of emitter-base bandgap grading (or source electrode) meeting limitation of radio frequency signal can consume the part RF energy simultaneously, thereby reduces the power output of voltage controlled oscillator.According to the Lesson equality, one of efficacious prescriptions method that improves phase noise performance is to improve the power output of voltage controlled oscillator, thereby adopts that the phase noise performance of voltage controlled oscillator has obtained certain raising after this structure.
Description of drawings
Fig. 1 is the structural representation of prior art voltage controlled oscillator;
Fig. 2 is the structural representation of embodiment of the invention voltage controlled oscillator;
Fig. 3 is the result of calculation of the phase noise of embodiment of the invention voltage controlled oscillator;
Fig. 4 is the test result (phase ring test with lock, loop bandwidth are 10KHz) of the phase noise of embodiment of the invention voltage controlled oscillator.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.Though this paper can provide the demonstration of the parameter that comprises particular value, should be appreciated that parameter need not definitely to equal corresponding value, but can in acceptable error margin or design constraint, be similar to corresponding value.
In one exemplary embodiment of the present invention, the transistorized voltage controlled oscillator of a kind of employing has been proposed.Fig. 2 is the structural representation of embodiment of the invention voltage controlled oscillator.As shown in Figure 2, the present embodiment voltage controlled oscillator adopts single active device pattern, comprising: base stage filtering biasing circuit, collector bias circuit, LC resonant circuit and feedback amplifier circuit.Wherein:
The collector bias circuit, its input is connected with peripheral power supply, and its first output is connected to the collector electrode of BJT.The voltage signal that is used for that this peripheral power supply is provided carries out exporting BJT to after the Filtering Processing, and stops the high-frequency oscillation signal collector bias circuit that bleeds.
Base stage filtering biasing circuit, its input is connected with the output of collector bias circuit, and output is connected to the BJT base stage.Be used for the voltage signal of input being carried out low frequency filtering, the low-frequency interference signal that bypass voltage controlled oscillator base stage is introduced by VT Vt.
The LC resonant circuit, its output is connected to the base stage of BJT, is used to provide oscillator signal, and the energy of loss is by the feedback amplifier supply, and its frequency of oscillation is controlled by VT Vt.
Feedback amplifier, its input connects the LC resonant circuit, and output is connected to load.Feedback amplifier receives the oscillator signal that the LC resonant circuit produces, and after oscillator signal was amplified, a signal back LC resonant circuit was with persistent oscillation, and another part is exported by collector as signal source.
In the present embodiment; Owing to adopt collector power filter and base supply filtering and dual power supply filter structure and base stage low-frequency disturbance bypass structure; Thereby can spurious frequency be suppressed to lower level, it is obviously spuious that output is not had, and has good phase noise performance simultaneously.Below respectively each part is elaborated.
One, base stage filtering biasing circuit.Base stage filtering biasing circuit receives the process dividing potential drop that the collector bias circuit brings, the power supply of filtering, to its base stage of carrying out exporting bipolar junction transistor to after the filtering as bias voltage.Base stage filtering biasing circuit is accomplished three effects: the bias pressure of one, accomplishing base stage; Two, accomplish the further Filtering Processing of the direct voltage that collector electrode is brought; The 3rd, the low-frequency interference signal of bypass voltage controlled oscillator base stage.Base stage filtering biasing circuit is made up of first capacitor C 1, second capacitor C 2 and first resistance R 1, the 2nd R2 and first inductance L 1.The bias voltage of being brought by collector electrode is connected to first end of first capacitor C 1 and first resistance R 1; The second end ground connection of first capacitor C 1; First resistance R 1 is connected with second resistance R 2; Second resistance R, 2 other end ground connection, their common port is received first end of first inductance L 1, the base stage of the second termination BJT of first inductance L 1; Simultaneously the common port of first resistance R 1, second resistance R 2 is through second capacitor C, 2 ground connection.The series connection potential-divider network that the base stage bias pressure is made up of first resistance R 1, second resistance R 2; Base supply filtering is formed π type RC filter network by first capacitor C 1, first resistance R 1, second capacitor C 2 and is accomplished, thereby improves the anti-power supply interference performance of voltage controlled oscillator; The L type LC filtering grid that the bypass of base stage low-frequency disturbance is made up of first inductance L 1, second capacitor C 2 is accomplished; The inductance value of first inductance L 1 is less, and approximate straight-through to low frequency signal, the low-frequency interference signal of voltage controlled oscillator base stage is through first inductance L 1; By 2 bypasses of second capacitor C; The low frequency signal that low-frequency disturbance of being introduced by VT VT and LC resonant circuit possibly bring is further suppressed, and makes BJT obtain comparatively pure oscillator signal, has reduced phase noise and spurious frequency.
Base stage bias pressure structure in this circuit is a universal method of the prior art.The base supply filter circuit has adopted π type RC filter network; Be the base supply filter structure that the present invention creates, simultaneously, the input power supply of base stage has carried out first order Filtering Processing through the π type RC filter network of collector; Has very strong anti-power supply interference performance; Usually adopt shunt capacitance that power supply is carried out filtering in the prior art or adopt the filter network structure of LC type, its filter effect to low frequency is good not as RC type structure, and its former because electric capacity, inductance are to frequency sensitive; And resistance is insensitive to frequency, thereby the filtering bandwidth of RC mode filter wants big; Base stage low-frequency disturbance bypass structure is the original creation structure among the present invention, and prior art does not have relevant alternative structure.
Two, collector bias circuit.The collector bias circuit is supplied power by peripheral power supply, and the power supply that this peripheral power supply is provided carries out exporting to the collector electrode of ground level filtering biasing circuit and BJT after the Filtering Processing, and stops the high-frequency oscillation signal biasing circuit that bleeds.The collector bias circuit is made up of the 3rd resistance R 3, the three capacitor C 3, the 4th capacitor C 4 and second inductance L 2.Power supply is connected to first end of the 3rd capacitor C 3 and the 3rd resistance R 3; The second end ground connection of the 3rd capacitor C 3; Be connected respectively to first end and first end of the 4th capacitor C 4 of second inductance L 2 of first end, the collector electrode of base bias circuit first resistance R 1 by second end of the 3rd resistance R 3; Second end of second inductance L 2 is connected to the BJT collector electrode, the second end ground connection of the 4th capacitor C 4.The π type RC filtering current limliting network that the 3rd capacitor C 3, the 3rd resistance R 3, the 4th capacitor C 4 are formed is as the filtering current-limiting circuit of power supply; 3 metering functions of the 3rd resistance R; Can make voltage controlled oscillator have bigger operating voltage range and protect voltage-controlled oscillator circuit, in addition, if the power output of voltage controlled oscillator is had specified requirement; Can realize through the resistance value of adjusting the 3rd resistance R 3, and can not produce obviously influence other index of voltage controlled oscillator.Direct current tie line is made up of the 3rd resistance R 3 and second inductance L 2, and the 3rd resistance R 3 is used for current limliting, and second inductance L 2 is used for the collector electrode of the BJT of power feed and the oscillator signal of isolating voltage controlled oscillator output.
Direct current tie line in this circuit is a universal architecture of the prior art; π type RC filtering current-limiting circuit is a structure exclusive among the present invention, adopts shunt capacitance that power supply is carried out the filter network structure that the LC type is perhaps adopted in filtering in the prior art usually.Its filter effect to low frequency is good not as RC type structure.
Three, LC resonant circuit.The LC resonant circuit is the BJT outputting oscillation signal, confirms frequency of oscillation, and the energy of loss is by the feedback amplifier supply, and its frequency of oscillation is controlled by VT Vt.The LC resonant circuit is by varactor Ct, and the 6th capacitor C 6, the 7th capacitor C 7 and the 4th inductance L 4 are formed.Output warp the 8th capacitor C 8 of LC resonant circuit is connected to the base stage of BJT, and the 5th capacitor C 5 and the 3rd inductance L 3 are the filtering biasing circuit of VT Vt.Ct plus earth, negative pole with compose in parallel the electric capacity series-parallel network with the 7th capacitor C 7 again after the 6th capacitor C 6 is connected, this series-parallel network composes in parallel parallel resonator with the 4th inductance L 4 more then, their common port is coupled to the BJT base stage through the 8th capacitor C 8.VT Vt by the negative pole of the 3rd inductance L 3 feed-in varactors, when VT Vt can't help phase-locked loop control, can adopt and the identical structure of base stage filtering collection circuits, to improve filter effect after the 5 parallelly connected filtering of the 5th capacitor C; When VT Vt was controlled by phase-locked loop, the loop filter cascade of base stage filtering bias circuit construction and phase-locked loop can have influence on the operate as normal of loop filter.Be to improve the Q value of resonant circuit, varactor Ct has been adopted in capacitor element, and the 6th capacitor C 6, the 7th capacitor C 7 series-parallel patterns are to improve the phase noise performance of voltage controlled oscillator.The monolateral band phase noise of voltage controlled oscillator can be expressed as with improved Lesson equality:
Wherein F is the noise factor of active device, and k is the graceful constant of bohr thatch, and T is an absolute temperature, P
oBe the power output of voltage controlled oscillator, f
cBe amplifying device flicker noise frequency inflection point, f
0Be carrier frequency, f
mBe the poor of test noise point and carrier frequency, Q
tBe the loaded quality factor of circuit, R
vBe the noise resistance of varactor, K
vBe tuning sensitivity, its unit is MHz/V.Can be for the voltage controlled oscillator of a given frequency; The key of low phase noise is to select for use the amplifying device of low flash noise frequency inflection point; Increase the circuit loaded Q; It reduces compressing sensitivity mainly by the resonant tank decision, increases power output phase noise performance is to a certain degree improved.
This LC resonant circuit is a kind of universal method of the prior art.Except that method proposed by the invention, also can take the structure of other LC resonant circuits of the prior art.
Four, feedback amplifier.Feedback amplifier receives the oscillator signal that the LC resonant circuit produces, and after oscillator signal was amplified, a signal back LC resonant circuit was with persistent oscillation, and another part is exported by collector as signal source.Feedback amplifier is by bipolar junction transistor BJT, and the 9th capacitor C 9, the tenth capacitor C 10 and the 5th inductance L 5 are formed.The 5th inductance L 5 and the tenth capacitor C 10 parallel connection back first termination BJT penetrate level, the second end ground connection; The 9th capacitor C 9 is connected across between the base stage and emitter-base bandgap grading of BJT, and oscillator signal outputs to load through collector electrode partiting dc capacitor C11.For improving the power output of voltage controlled oscillator, improve phase noise performance, the level of penetrating of BJT is not added resistance.Passive device value through software emulation adjustment feedback amplifier makes circuit satisfy oscillating condition, and optimizes phase noise.
Feedback amplifier has adopted circuit structure general in the prior art.
Among the voltage-controlled oscillator circuit embodiment of the present invention, BJT has selected AT-41533 for use, and varactor has used SMV1233, and design center frequency is 800MHz, and voltage-controlled sensitivity is 20MHz/V, voltage controlled oscillator bias voltage 5V, the exportable VT 0～5V of PLL.
It is as shown in Figure 3 to calculate its theoretical monolateral band phase noise response by (1) formula.Phase noise in 10KHz frequency shift (FS) place is-97.5dBc/Hz that the test phase noise of 100KHz frequency shift (FS) place is-126.1dBc/Hz that the test phase noise of 1MHz frequency shift (FS) place is-150.5dBc/Hz.Reacted device optimal theoretical noise level in the voltage controlled oscillator design of selecting for use.
Actual test curve is as shown in Figure 4, and the loop bandwidth of phase-locked loop is 10KHz in the test.Test phase noise in 10KHz frequency shift (FS) place is-94.5dBc/Hz; The test phase noise of 100KHz frequency shift (FS) place is-114.3dBc/Hz; The test phase noise of 1MHz frequency shift (FS) place is-134.5dBc/Hz; Under the situation of lock phase bandwidth 10KHz, do not have obviously spuious in the whole test specification.The phase noise of actual test is bigger than Theoretical Calculation result, be because always have power supply noise and ambient noise in the actual voltage controlled oscillator, and each device in the voltage controlled oscillator also can produce noise, and this is not included in theory is calculated; The affiliation that adds of phase-locked loop simultaneously is superimposed to the noise of its generation on the voltage controlled oscillator.Nothing is obviously spuious in the whole test specification, explains that the base stage filtering biasing circuit of this voltage controlled oscillator is very effective to the inhibition of spurious frequency.
It should be apparent to those skilled in the art that: though the amplifying device in the present embodiment has adopted transistor device; But can adopt the FET device equally, as: high electron mobility FET HEMT, nodal pattern FET JFET or metal oxide semiconductor field effect tube MOSFET.Adopt the voltage controlled oscillator of FET to comprise: LC resonant circuit, drain bias circuit and feedback amplifier, wherein: the LC resonant circuit is used to provide oscillator signal.The drain bias circuit; Its input is connected with peripheral power supply; The power supply that is used for that this peripheral power supply is provided carries out exporting feedback amplifier to after the Filtering Processing; Comprise: the 3rd resistance, its first end is connected to peripheral power supply, and its second end is connected to the drain electrode of bipolar junction transistor through second inductance; The 3rd electric capacity, its first end is connected to peripheral power supply, and second end is connected to ground; The 4th electric capacity, its first end is connected to second end of said the 3rd resistance, and second end is connected to ground, and said the 3rd electric capacity, the 3rd resistance, the 4th electric capacity are formed π type RC filtering current limliting network.Feedback amplifier; Its input is connected with first output of said LC resonant circuit and said drain bias circuit respectively; Be used to utilize the power supply that carries out after the said Filtering Processing that said oscillator signal is amplified back output; Comprise: FET, its drain electrode are connected to said drain bias circuit, and are connected to the output of said voltage controlled oscillator through the 11 partiting dc capacitor; Its grid is connected to the LC resonant circuit through the 8th electric capacity; The 5th inductance and the tenth electric capacity of parallel connection, its first end is connected to the emitter of said bipolar junction transistor, and is connected to the grid of the emitter of said bipolar junction transistor through the 9th electric capacity; Its second end ground connection.
This voltage controlled oscillator can also comprise: grid filtering biasing circuit, be used to receive the power supply that the drain bias circuit is brought through the 3rd electric resistance partial pressure, and it is carried out exporting grid to as bias voltage after the filtering.Grid filtering biasing circuit comprises: first resistance, and its first end is connected to second end of the 3rd resistance in the said drain bias circuit, and its second end is connected to the grid of bipolar junction transistor through first inductance; Second resistance and second electric capacity of parallel connection, its first end is connected to second end of first resistance, and its second end is connected to ground; First electric capacity, its first end is connected to second end of the 3rd resistance in the said drain bias circuit, and its second end is connected to ground, and wherein, first electric capacity, first resistance and second electric capacity are formed π type RC filter network.
Other details of this voltage controlled oscillator can the transistorized voltage controlled oscillator of adopting by reference, no longer repeats here.In addition, it will be apparent to those skilled in the art that above embodiment only is a preferred embodiment, some other structure can substitute some structures among the present invention equally in the prior art.For example, adopt the LC series resonant circuit in the present embodiment, can take the LC antiresonant circuit equally.In addition, the power supply of mentioning in the preceding text is a kind of electrical power or energy stream in fact, can be the form of voltage, also can be the form of electric current, and is different with the hardware power supply of entity on the common meaning.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. voltage controlled oscillator comprises:
The LC resonant circuit is used to provide oscillator signal;
The collector bias circuit, its input is connected with peripheral power supply, is used for this power supply is carried out exporting feedback amplifier to after the Filtering Processing, comprising:
The 3rd resistance, its first end is connected to said power supply, and its second end is connected to the collector electrode of bipolar junction transistor through second inductance;
The 3rd electric capacity, its first end is connected to said power supply, and second end is connected to ground;
The 4th electric capacity, its first end is connected to second end of said the 3rd resistance, and second end is connected to ground, and said the 3rd electric capacity, the 3rd resistance, the 4th electric capacity are formed π type RC filtering current limliting network;
Feedback amplifier; Its input is connected with first output of said LC resonant circuit and said collector bias circuit respectively; Be used to utilize the power supply that carries out after the said Filtering Processing that said oscillator signal is amplified back output; Feedback energy returns said LC resonant circuit to keep its vibration simultaneously, comprising:
Bipolar junction transistor, its collector electrode are connected to said collector bias circuit, and are connected to the output of said voltage controlled oscillator through the 11 partiting dc capacitor; Its base stage is connected to the LC resonant circuit through the 8th electric capacity;
The 5th inductance and the tenth electric capacity of parallel connection, its first end is connected to the emitter of said bipolar junction transistor, and is connected to the base stage of the emitter of said bipolar junction transistor through the 9th electric capacity; Its second end ground connection.
2. voltage controlled oscillator according to claim 1, wherein, said the 3rd resistance is adjustable resistance.
3. voltage controlled oscillator according to claim 1 also comprises: base stage filtering biasing circuit, be used to receive power supply through the 3rd electric resistance partial pressure, to its base stage of carrying out exporting bipolar junction transistor to after the filtering as bias voltage.
4. voltage controlled oscillator according to claim 3, wherein, said base stage filtering biasing circuit comprises:
First resistance, its first end is connected to second end of the 3rd resistance in the said collector bias circuit, and its second end is connected to the base stage of bipolar junction transistor through first inductance;
Second resistance and second electric capacity of parallel connection, its first end is connected to second end of first resistance, and its second end is connected to ground;
First electric capacity, its first end is connected to second end of the 3rd resistance in the said collector bias circuit, and its second end is connected to ground;
Wherein, first electric capacity, first resistance and second electric capacity are formed π type RC filter network; The series connection potential-divider network that first resistance and second resistance are formed; First inductance, second electric capacity are formed the low-frequency disturbance bypass structure.
5. according to each described voltage controlled oscillator in the claim 1 to 4, wherein, said LC resonant circuit comprises:
The 7th electric capacity and the 4th inductance of parallel connection, both first ends are connected to the base stage of bipolar junction transistor through the 8th circuit, and second end is connected to ground;
The 6th electric capacity, its first end is connected to the base stage of bipolar junction transistor through the 8th circuit, and its second end is connected to the input of VT;
Varactor, its plus earth, its negative pole is connected to the input of VT.
6. voltage controlled oscillator according to claim 5 also comprises: VT filtering biasing circuit, between the input and LC resonant circuit of VT, be used for VT is carried out filtering, and comprising:
The 3rd inductance, its first end is connected to the input of VT, and its second end is connected to the negative pole of varactor and second end of the 6th electric capacity;
The 5th electric capacity, its first end is connected to the input of VT, its second end ground connection.
7. voltage controlled oscillator comprises:
The LC resonant circuit is used to provide oscillator signal;
The drain bias circuit, its input is connected with peripheral power supply, is used for this power supply is carried out exporting feedback amplifier to after the Filtering Processing, comprising:
The 3rd resistance, its first end is connected to said power supply, and its second end is connected to the drain electrode of bipolar junction transistor through second inductance;
The 3rd electric capacity, its first end is connected to said power supply, and second end is connected to ground;
The 4th electric capacity, its first end is connected to second end of said the 3rd resistance, and second end is connected to ground, and said the 3rd electric capacity, the 3rd resistance, the 4th electric capacity are formed π type RC filtering current limliting
Network;
Feedback amplifier, its input are connected with first output of said LC resonant circuit and said drain bias circuit respectively, are used to utilize the power supply that carries out after the said Filtering Processing that said oscillator signal is amplified back output, comprising:
FET, its drain electrode are connected to said drain bias circuit, and are connected to the output of said voltage controlled oscillator through the 11 partiting dc capacitor; Its grid is connected to the LC resonant circuit through the 8th electric capacity;
The 5th inductance and the tenth electric capacity of parallel connection, its first end is connected to the emitter of said bipolar junction transistor, and is connected to the grid of the emitter of said bipolar junction transistor through the 9th electric capacity; Its second end ground connection.
8. voltage controlled oscillator according to claim 7, wherein, said the 3rd resistance is adjustable resistance.
9. voltage controlled oscillator according to claim 7 also comprises: grid filtering biasing circuit, be used to receive the supply voltage that the drain bias circuit is brought through the 3rd electric resistance partial pressure, and it is carried out exporting grid to as bias voltage after the filtering.
10. voltage controlled oscillator according to claim 9, wherein, said grid filtering biasing circuit comprises:
First resistance, its first end is connected to second end of the 3rd resistance in the said drain bias circuit, and its second end is connected to the grid of bipolar junction transistor through first inductance;
Second resistance and second electric capacity of parallel connection, its first end is connected to second end of first resistance, and its second end is connected to ground;
First electric capacity, its first end is connected to second end of the 3rd resistance in the said drain bias circuit, and its second end is connected to ground,
Wherein, first electric capacity, first resistance and second electric capacity are formed π type RC filter network; The series connection potential-divider network that first resistance and second resistance are formed; First inductance, second electric capacity are formed the low-frequency disturbance bypass structure.
11. according to each described voltage controlled oscillator in the claim 7 to 9, wherein, said FET is: high electron mobility FET HEMT, technotron JFET or metal oxide semiconductor field effect tube MOSFET.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105743494A (en) * | 2016-01-27 | 2016-07-06 | 苏州翠南电子科技有限公司 | Filtering voltage-controlled oscillator |
| CN106877819A (en) * | 2016-11-21 | 2017-06-20 | 章策珉 | Voltage controlled oscillator based on compound resonator |
| CN106899269A (en) * | 2017-02-15 | 2017-06-27 | 天水七四九电子有限公司 | High frequency LC voltage controlled oscillators and tuning methods that a kind of thickness tuning is combined |
| CN108932373A (en) * | 2018-06-14 | 2018-12-04 | 东华大学 | A kind of oscillator phase analysis method based on virtual instrument technology |
| CN109600124A (en) * | 2018-12-29 | 2019-04-09 | 厦门英诺迅科技有限公司 | A kind of voltage-controlled tuning frequency-selective network |
| CN110954195A (en) * | 2018-09-26 | 2020-04-03 | 黄显核 | Quick dynamic weighing sensor |
| CN111130459A (en) * | 2019-12-02 | 2020-05-08 | 天津大学 | Flexible voltage-controlled oscillator based on flexible substrate and manufacturing method |
| CN117713812A (en) * | 2024-02-04 | 2024-03-15 | 安徽矽磊电子科技有限公司 | Broadband oscillator for phase-locked loop |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105743494A (en) * | 2016-01-27 | 2016-07-06 | 苏州翠南电子科技有限公司 | Filtering voltage-controlled oscillator |
| CN106877819A (en) * | 2016-11-21 | 2017-06-20 | 章策珉 | Voltage controlled oscillator based on compound resonator |
| CN106899269A (en) * | 2017-02-15 | 2017-06-27 | 天水七四九电子有限公司 | High frequency LC voltage controlled oscillators and tuning methods that a kind of thickness tuning is combined |
| CN106899269B (en) * | 2017-02-15 | 2020-12-01 | 天水七四九电子有限公司 | High-frequency LC voltage-controlled oscillator combining coarse tuning and fine tuning and tuning method |
| CN108932373A (en) * | 2018-06-14 | 2018-12-04 | 东华大学 | A kind of oscillator phase analysis method based on virtual instrument technology |
| CN110954195A (en) * | 2018-09-26 | 2020-04-03 | 黄显核 | Quick dynamic weighing sensor |
| CN109600124A (en) * | 2018-12-29 | 2019-04-09 | 厦门英诺迅科技有限公司 | A kind of voltage-controlled tuning frequency-selective network |
| CN111130459A (en) * | 2019-12-02 | 2020-05-08 | 天津大学 | Flexible voltage-controlled oscillator based on flexible substrate and manufacturing method |
| CN117713812A (en) * | 2024-02-04 | 2024-03-15 | 安徽矽磊电子科技有限公司 | Broadband oscillator for phase-locked loop |
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