CN2579080Y - High-frequency voltage controlling oscillator - Google Patents
High-frequency voltage controlling oscillator Download PDFInfo
- Publication number
- CN2579080Y CN2579080Y CN 02285185 CN02285185U CN2579080Y CN 2579080 Y CN2579080 Y CN 2579080Y CN 02285185 CN02285185 CN 02285185 CN 02285185 U CN02285185 U CN 02285185U CN 2579080 Y CN2579080 Y CN 2579080Y
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- controlled oscillator
- frequency signal
- circuit
- voltage controlled
- high frequency
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Abstract
The utility model relates to a high frequency voltage control oscillator, which generates a high frequency oscillating signal in a frequency multiplication mode. The utility model is composed of a resonance circuit, an oscillating circuit, a first buffer amplifying circuit and a second buffer amplifying circuit, wherein, a microstrip line, the line length of which is lambda/4 as long as a secondary resonance frequency, is used in the second buffer amplifying circuit, which not only suppresses a fundamental frequency, but also amplifies a frequency near a second harmonic. According to the circuit provided by the utility model, the resonance frequency near from 2 GHz to 3 GHz can be output to an oscillation frequency near from 4 GHz to 6 GHz through the circuit of the utility model.
Description
Technical field
The utility model is about a kind of voltage-controlled oscillator, particularly a kind of high frequency voltage controlled oscillator with Ke's time type (Colpitts-type) circuit framework.
Background technology
(Voltage Controlled Oscillator is to utilize external voltage to come the variable frequency oscillating circuit of change frequency VCO) to voltage-controlled oscillator.Utilizing the variable range of the frequency that voltage control does, is according to purpose and purposes and decide.In high-frequency component circuit or communication system, voltage-controlled oscillator is an element commonly used.
A kind of voltage-controlled oscillator that prior art proposed includes a resonant circuit (resonance circuit) 100, one oscillating circuit (oscillation circuit) 200 and one buffer amplifier circuit (buffer amplifying circuit) 300 as shown in Figure 1.
200 resonant frequency signal of being exported according to resonant circuit 100 of oscillating circuit are exported one first oscillation frequency signal, and oscillating circuit 200 is made up of a first transistor TR1, capacitor C 5, C6, C7.Capacitor C 5 is to be coupled between the base stage and emitter-base bandgap grading of the first transistor TR1, and capacitor C 6 is coupled to emitter-base bandgap grading and earth terminal, and 7 of capacitor C are coupled to the collection utmost point and earth terminal.First oscillation frequency signal is by the base stage input of the first transistor TR1, and oscillation frequency signal is exported by emitter-base bandgap grading (Emitter).In addition, the emitter-base bandgap grading end of the first transistor TR1 is in series with a resistance R 4 and one second microstrip line SLIN2, in order to flow (radio frequency choke) as the radio frequency strategic point.
300 of buffer amplifier circuits include a transistor seconds TR2, first oscillation frequency signal is by the emitter-base bandgap grading output of the first transistor TR1, base stage via capacitor C 8 input transistor seconds TR2, be enlarged into second oscillation frequency signal through transistor seconds TR2, export via capacitor C 9 by its collection utmost point (collector).
Resistance R 1, R2 and R3 are then in order to determine the base bias (base bias voltage) of the first transistor TR1 and transistor seconds TR2, one end and the power Vcc of resistance R 1 couple, the other end and resistance R 2 couple, and resistance R 3 a wherein end and resistance R 2 is joined, and the other end then is coupled to earth terminal.
Match circuit 400, it is impedance (impedance) in order to the output of mating second oscillation frequency signal, it includes an inductance L 3 and a capacitor C 10, one end of inductance L 3 is connected to the collection utmost point of transistor seconds TR2, the other end then is connected to power end Vcc, one end and the power end of capacitor C 10 couple, and the other end and earth terminal couple.
Institute's its frequency of oscillation of the voltage-controlled oscillator that provides is about 2GHz to 3GHz among Fig. 1, that is oscillating circuit is vibrated by the resonance frequency that resonant circuit determined one, amplify the oscillation frequency signal of exporting by the collector terminal of transistor seconds TR2 by buffer circuit again, at last via capacitor C 8 outputs.
Yet in follow-on communication system, some will use the frequency up to 4GHz to 6GHz frequency range, in the voltage-controlled oscillator circuit that present technology was proposed, desire to make near the vibration of frequency 5GHz to belong to more inaccessible technology.And with surface mount technology (Surface Mount Technology; SMT) voltage-controlled oscillator of made, its operating voltage are near the low-voltage 2.8 volts, and when high-frequency work, spurious effects is comparatively serious.Therefore, under present technology limitation, difficulty finds electronic components such as suitable transistor and diode, forms the voltage-controlled oscillator of exportable required frequency and frequency range.
Therefore need a kind of voltage-controlled oscillator that produces higher-order of oscillation frequency badly, can't export the problem of higher-order of oscillation frequency to solve present voltage-controlled oscillator.
Summary of the invention
In view of above problem, main purpose of the present utility model is to provide a high frequency voltage controlled oscillator, amplifies the resonance frequency of the being exported second time with a frequency multiplier circuit, reaches the purpose of output higher-order of oscillation frequency.
Therefore, for reaching above-mentioned purpose, the utility model provides a kind of high frequency voltage controlled oscillator, includes:
One resonant circuit is in order to export a resonant frequency signal;
One oscillating circuit according to this resonant frequency signal, is exported a first order frequency signal;
One first buffer amplifier circuit is exported a second level frequency signal according to this first order frequency signal; And
One second buffer amplifier circuit is exported a third level frequency signal according to this second level frequency signal.
Circuit according to high frequency voltage controlled oscillator provided by the utility model, the frequency of oscillation of oscillating circuit only need be vibrated to 2GHz to 3GHz, relend by a frequency multiplier circuit is the frequency of oscillation of exportable 4GHz to 6GHz, for the ghost effect that the connection pad (PAD) and the cabling of all parts in the SMT technology causes, better control.
In addition, frequency of oscillation is less to the susceptibility of part value amount of variability, can improve the stability of oscillating circuit.And circuit provided by the utility model has the buffer circuit (Buffer) of two-stage, and it promotes effect (pulling effect) can reach preferable effect.
Description of drawings
Fig. 1 is the circuit diagram of the voltage-controlled oscillator of prior art; And
Fig. 2 is the circuit diagram of voltage-controlled oscillator provided by the utility model.
Embodiment
Please refer to Fig. 2, circuit diagram for high frequency voltage controlled oscillator provided by the utility model, include a resonant circuit 100, an oscillating circuit 200, one first buffer amplifier circuit 500, one second buffer amplifier circuit 600, according to circuit provided by the utility model be utilize the two-stage buffer amplifier circuit with oscillation frequency signal through twice amplification after, produce the oscillator signal of 4GHz to 6GHz frequency.
200 resonant frequency signal of being exported according to resonant circuit 100 of oscillating circuit are exported a first order frequency signal, and oscillating circuit 200 is made up of a first transistor TR1, capacitor C 5, capacitor C 6, capacitor C 7.Capacitor C 5 is to be coupled between the base stage and emitter-base bandgap grading of the first transistor TR1, and capacitor C 6 is coupled to emitter-base bandgap grading and earth terminal, and 7 of capacitor C are coupled to the collection utmost point and earth terminal.This first order frequency signal is exported by the base stage input of the first transistor TR1 and by the emitter-base bandgap grading (Emitter) of the first transistor TR1.In addition, the emitter-base bandgap grading end of the first transistor TR1 is in series with a resistance R 4 and one second microstrip line SLIN2, in order to flow (Radiofrequency Choke) as the radio frequency strategic point.The collection utmost point at the first transistor TR1 is coupled with an inductance L 1 in addition, and the other end of inductance L 1 is coupled with a capacitor C 9.Resonant circuit 100 is formed Ke time type oscillator (Colpitts-type Voltage controlled Oscillator) with oscillating circuit 200.
The main composition of first buffer amplifier circuit 500 is a transistor seconds TR2, this resonant frequency signal is the base stage input by the first transistor TR1, be input as this first order frequency signal by emitter-base bandgap grading, import by transistor seconds TR2 via capacitor C 8 again, and be output as a second level frequency signal by the collection utmost point of transistor seconds TR2.
Incidentally, resistance R 1, R2 and R3 are then in order to determine the base bias (base bias voltage) of the first transistor TR1 and transistor seconds TR2, one end and the power Vcc of resistance R 1 couple, the other end and resistance R 2 couple, resistance R 3 a wherein end and resistance R 2 is joined, and the other end then is coupled to earth terminal.
Because the generation circuit of higher-order of oscillation frequency provided by the utility model is to reach in the mode that frequency multiplication is amplified, therefore, this second level frequency signal must be adjusted near the resonance of second harmonic frequency.So be coupled with the resonant circuit that an inductance L 3 and electric capacity 10 are formed at the collection utmost point of transistor seconds TR2, this second level frequency signal be adjusted near the resonance second harmonic frequency.
600 of second buffer amplifier circuits amplify second level frequency signal and are output as third level frequency signal, and the third level frequency signal after the amplification is about the twice of first order frequency signal.Second buffer amplifier circuit 600 includes one the 3rd transistor T R3, and an end of its base stage and capacitor C 10 couples, and second level frequency signal is exported by its collection utmost point after being enlarged into third level frequency signal by the base stage input of the 3rd transistor T R3.
The collection utmost point of the 3rd transistor T R3 is coupled with a resonator of being made up of inductance L 4 and capacitor C 11, in order to the 3rd oscillation frequency signal is adjusted near the resonance second harmonic frequency, and except suppressing fundamental frequency, and the amplification second harmonic.Be coupled with a resistance R 5 and a capacitor C 13 between the emitter-base bandgap grading of the 3rd transistor T R3 and earth terminal respectively, in order to as high frequency earthing.
The base terminal of the 3rd transistor T R3 more is coupled with one the 3rd microstrip line SLIN3, and its line length at second harmonic frequency is λ/4, in order to the inhibition fundamental frequency, and amplifies two frequency-doubled signals.The other end of the 3rd microstrip line SLIN3 is coupled with a capacitor C 12, and its other end then couples with earth terminal.
In sum, high frequency voltage controlled oscillator provided by the utility model utilizes the mode of frequency multiplication to produce the oscillator signal of 4GHz to 6GHz frequency.The resonant circuit of its first buffer amplifier circuit output is adjusted near the resonance second harmonic frequency with second level frequency signal.The input of second buffer amplifier circuit, use one on second harmonic frequency line length be the microstrip line of λ/4, so can suppress fundamental frequency (fundamental component), and amplify two frequency-doubled signals.Near the resonance second harmonic frequency also adjusted to third level frequency signal by the resonant circuit of the output of second buffer amplifier circuit, except amplifying second harmonic, and suppresses fundamental frequency.
Claims (14)
1, a kind of high frequency voltage controlled oscillator is characterized in that including:
One resonant circuit is in order to export a resonant frequency signal;
One oscillating circuit according to this resonant frequency signal, is exported a first order frequency signal;
One first buffer amplifier circuit is exported a second level frequency signal according to this first order frequency signal; And
One second buffer amplifier circuit is exported a third level frequency signal according to this second level frequency signal.
2, high frequency voltage controlled oscillator as claimed in claim 1 is characterized in that this resonant circuit and this oscillating circuit form Ke time type oscillator.
3, high frequency voltage controlled oscillator as claimed in claim 1 is characterized in that this resonant circuit more includes one first microstrip line, an inductance, a variable capacitance diode and a plurality of electric capacity.
4, high frequency voltage controlled oscillator as claimed in claim 1 is characterized in that this oscillating circuit comprises a plurality of electric capacity and a first transistor.
5, high frequency voltage controlled oscillator as claimed in claim 4 is characterized in that being in series with resistance and one second microstrip line between the emitter-base bandgap grading of this first transistor and earth terminal, in order to as radio frequency strategic point stream.
6, high frequency voltage controlled oscillator as claimed in claim 1, the frequency that it is characterized in that this third level frequency signal is the twice of the frequency of first order frequency signal.
7, high frequency voltage controlled oscillator as claimed in claim 1 is characterized in that this first order frequency signal is in this oscillated at resonance.
8, high frequency voltage controlled oscillator as claimed in claim 1, it is characterized in that this resonant circuit more includes a variable capacitance diode, when a demodulating voltage during from the input of this resonant circuit, the capacitance of this variable capacitance diode will change, and makes this resonant frequency signal of this resonant circuit output change with the capacitance of this variable capacitance diode.
9, high frequency voltage controlled oscillator as claimed in claim 1 is characterized in that this first buffer amplifier circuit is made up of a transistor seconds, an inductance and an electric capacity.
10, high frequency voltage controlled oscillator as claimed in claim 9 is characterized in that this inductance and this electric capacity are to form a resonant circuit, adjust to secondary harmonic generation (SHG) with this second level frequency signal.
11, high frequency voltage controlled oscillator as claimed in claim 1 is characterized in that the 3rd buffer amplifier is made up of one the 3rd transistor, an inductance and an electric capacity.
12, high frequency voltage controlled oscillator as claimed in claim 11 is characterized in that this inductance and this electric capacity are to form a resonant circuit, adjust to secondary harmonic generation (SHG) with this third level frequency signal.
13, high frequency voltage controlled oscillator as claimed in claim 1 is characterized in that being coupled with one the 3rd microstrip line between this first buffer amplifier circuit and this second buffer amplifier circuit, in order to amplify this second level frequency signal.
14, high frequency voltage controlled oscillator as claimed in claim 13 is characterized in that the 3rd microstrip line is λ/4 at the line length of second harmonic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02285185 CN2579080Y (en) | 2002-11-08 | 2002-11-08 | High-frequency voltage controlling oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02285185 CN2579080Y (en) | 2002-11-08 | 2002-11-08 | High-frequency voltage controlling oscillator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2579080Y true CN2579080Y (en) | 2003-10-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02285185 Expired - Lifetime CN2579080Y (en) | 2002-11-08 | 2002-11-08 | High-frequency voltage controlling oscillator |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102111153A (en) * | 2010-04-02 | 2011-06-29 | 中国科学院上海天文台 | Automatic tuning method and system for cavity frequency of hydrogen atomic clock |
| CN102270968A (en) * | 2010-06-03 | 2011-12-07 | 中国科学院微电子研究所 | Off-chip harmonic wave absorption loop |
| CN102594342A (en) * | 2012-02-29 | 2012-07-18 | 中国科学院微电子研究所 | Voltage controlled oscillator |
-
2002
- 2002-11-08 CN CN 02285185 patent/CN2579080Y/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102111153A (en) * | 2010-04-02 | 2011-06-29 | 中国科学院上海天文台 | Automatic tuning method and system for cavity frequency of hydrogen atomic clock |
| CN102111153B (en) * | 2010-04-02 | 2013-02-27 | 中国科学院上海天文台 | Automatic tuning method and system for cavity frequency of hydrogen atomic clock |
| CN102270968A (en) * | 2010-06-03 | 2011-12-07 | 中国科学院微电子研究所 | Off-chip harmonic wave absorption loop |
| CN102270968B (en) * | 2010-06-03 | 2013-08-28 | 中国科学院微电子研究所 | Off-chip harmonic wave absorption loop |
| CN102594342A (en) * | 2012-02-29 | 2012-07-18 | 中国科学院微电子研究所 | Voltage controlled oscillator |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20121108 Granted publication date: 20031008 |