CN104052465A - High-frequency-point, high-stability, low-noise and constant-temperature crystal oscillator - Google Patents
High-frequency-point, high-stability, low-noise and constant-temperature crystal oscillator Download PDFInfo
- Publication number
- CN104052465A CN104052465A CN201410297001.7A CN201410297001A CN104052465A CN 104052465 A CN104052465 A CN 104052465A CN 201410297001 A CN201410297001 A CN 201410297001A CN 104052465 A CN104052465 A CN 104052465A
- Authority
- CN
- China
- Prior art keywords
- circuit
- crystal oscillator
- constant
- temperature crystal
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 107
- 238000001914 filtration Methods 0.000 claims description 12
- 238000007493 shaping process Methods 0.000 claims description 5
- 230000003321 amplification Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 238000002955 isolation Methods 0.000 abstract description 4
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 4
- 230000003595 spectral effect Effects 0.000 abstract 1
- 230000001629 suppression Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000032683 aging Effects 0.000 description 4
- 238000005086 pumping Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000001699 lower leg Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
Landscapes
- Oscillators With Electromechanical Resonators (AREA)
Abstract
The invention relates to a high-frequency-point, high-stability, low-noise and constant-temperature crystal oscillator. The crystal oscillator comprises a high-stability and constant-temperature crystal oscillator circuit, a phase-locking circuit, an ultralow-noise and constant-temperature crystal oscillator circuit and a signal multiplication and amplification filter circuit. The high-stability and constant-temperature crystal oscillator circuit and the ultralow-noise and constant-temperature crystal oscillator circuit are respectively and electrically connected with the phase-locking circuit, and the phase-locking circuit locks the ultralow-noise and constant-temperature crystal oscillator circuit through the high-stability and constant-temperature crystal oscillator circuit. The signal multiplication and amplification filter circuit is provided with an input end and a high-frequency output end, and the input end is electrically connected with the ultralow-noise and constant-temperature crystal oscillator circuit. The crystal oscillator is simple and reasonable in structure, low in noise, high in isolation degree, high in spectral purity and good in use effect and avoids phase drift, and the frequency point can be 400 MHz.
Description
Technical field
The present invention relates to crystal oscillator technical field, particularly a kind of high frequency points high stable low-noise constant-temperature crystal oscillator.
Background technology
Frequency multiplier adopts active device more at present, makes transistor be operated in inelastic region, and pumping signal is become to current impulse, has so just produced multiple harmonic.Then by frequency-selective circuit, select needed harmonic wave, to reach the object of frequency multiplication.The main shortcoming of this frequency multiplier is: pumping signal is become to current impulse, produce multiple harmonic, energy disperses, selected frequency-doubled signal a little less than, signal to noise ratio is low; In order to obtain the less angle of flow, transistor requires there are enough reverses biased, to having relatively high expectations of components and parts.Because transistor is operated in inelastic region, guarantee that collector current pulse is enough large, to produce abundant harmonic wave, will strengthen ac-excited voltage, the power requirement of this pumping signal is high.High frequency points constant-temperature crystal oscillator adopts low frequency constant-temperature crystal oscillator lock VCO or VCXO at present mostly.By low frequency constant-temperature crystal oscillator, control VCO or VCXO, reach the output of high stable high frequency points.This mode lock out that the easy losing lock of frequency, the phase noise that come are poor, shake is larger.
Summary of the invention
The object of the invention is to overcome the deficiency that above-mentioned prior art exists, and provide a kind of simple and reasonable for structure, frequency can arrive 400MHz, and noise is little, isolation is high, frequency spectrum is pure, result of use is good, avoided the high frequency points high stable low-noise constant-temperature crystal oscillator of phase drift.
The object of the present invention is achieved like this:
A high frequency points high stable low-noise constant-temperature crystal oscillator, is characterized in that, comprises high stable constant-temperature crystal oscillator circuit, phase lock circuitry, super low noise constant-temperature crystal oscillator circuit and signal multiplication filtering and amplifying circuit; Described high stable constant-temperature crystal oscillator circuit and super low noise constant-temperature crystal oscillator circuit are electrically connected with phase lock circuitry respectively, high stable constant-temperature crystal oscillator Circuit lock super low noise constant-temperature crystal oscillator circuit for phase lock circuitry; Described signal multiplication filtering and amplifying circuit is provided with input and high frequency output end, and input and super low noise constant-temperature crystal oscillator circuit are electrically connected.
Object of the present invention can also adopt following technical measures to solve:
As a kind of scheme more specifically, described high stable constant-temperature crystal oscillator circuit comprises first crystal, the first high-accuracy thermostat and for making first crystal produce Pierre's Si triode oscillating circuit of frequency, first crystal is arranged in the first high-accuracy thermostat and with Pierre's Si triode oscillating circuit and is electrically connected.In described Pierre's Si triode oscillating circuit, form and be useful on the B mould Suppression network that produces the B mould frequency that suppresses overtone crystal, and formation is useful on the C mould Suppression network that suppresses overtone crystal harmonic frequency, thereby play Suppression network and play the effect that inhibition does not need frequency, unwanted fundamental frequency, overtone frequency suppresses.The first high-accuracy thermostat for crystal constant temperature at fixing temperature spot, temperature fluctuation is less than 0.01 ℃.
Described super low noise constant-temperature crystal oscillator circuit comprises the second crystal, the second high-accuracy thermostat and for making the second crystal produce Pierre's Si oscillating circuit of frequency, the second crystal is arranged in the second high-accuracy thermostat and with Pierre's Si oscillating circuit and is electrically connected.In a described Pierre Si oscillating circuit, be provided with phase angle compensation electric capacity, play and meet zero phase equilibrium condition, in addition, forming has harmonic suppression network, and is provided with and the frequency school of oscillator can be got back to the electric capacity of the nominal frequency of resonator.Also have, in Pierre's Si oscillating circuit, be provided with inverter and to the feedback resistance of should inverter and establishing, feedback resistance is biased in inverter in linear zone, so that the input impedance of inverter is mated with crystal.
Described phase lock circuitry is PLL phase lock circuitry, and this circuit is provided with single-chip microcomputer and phase discriminator, and high stable constant-temperature crystal oscillator circuit and super low noise constant-temperature crystal oscillator circuit are electrically connected with the phase discriminator of PLL phase lock circuitry respectively.
Described signal multiplication filtering and amplifying circuit comprises the first frequency multiplier circuit, the first bandwidth-limited circuit, the first amplifying circuit, the second bandwidth-limited circuit, the second frequency multiplier circuit, the second amplifying circuit, the 3rd filter circuit, shaping match circuit and the high frequency output end being electrically connected successively.
Described the first frequency multiplier circuit and the second frequency multiplier circuit are the passive frequency multiplier circuit that is provided with passive frequency multiplier.
Described the first amplifying circuit and the second amplifying circuit are equipped with low noise amplifier.
Beneficial effect of the present invention is as follows:
(1) this kind of high frequency points high stable low-noise constant-temperature crystal oscillator, its frequency can arrive 400MHz, can expand to 600MHz, 900MHz, 1GHz by changing frequency, the bandwidth-limited circuit of passive frequency multiplier;
(2) band frequency multiplier and band pass filter all belongs to passive device, can find out there is reasonable in design, modularization, simple in structure, noise is little, isolation is high, frequency spectrum is pure, result of use is good, avoided the advantages such as phase drift;
(3) this kind of high frequency points high stable low-noise constant-temperature crystal oscillator adopts constant-temperature crystal oscillator to work as VCO, and frequency stability is high, aging little, makes an uproar mutually;
(4) this kind of high frequency points high stable low-noise constant-temperature crystal oscillator is locked ultralow phase noise 100MHz constant-temperature crystal oscillator by high stable 10MHz constant-temperature crystal oscillator, then by 100MHz frequency multiplication to 400MHz;
(5) this invention adopts passive frequency doubling device, overcomes the drawback of frequency multiplication in the past, has that noise factor is little, isolation is high; Adopt high steady 10MHz constant-temperature crystal oscillator lock ultra-low noise 100MHz constant-temperature crystal oscillator, have high stable, low aging, low feature of making an uproar mutually, 100MHz constant-temperature crystal oscillator adopts Pierre's Si oscillating circuit, has the feature of low noise, low jitter; 10MHz constant-temperature crystal oscillator adopts Pierre's Si triode oscillating circuit, has the feature of low aging high stable.
Accompanying drawing explanation
Fig. 1 is the electric circuit constitute block diagram of the present invention.
Fig. 2 is signal multiplication filtering and amplifying circuit schematic diagram in Fig. 1.
Fig. 3 is high stable constant-temperature crystal oscillator circuit theory diagrams in Fig. 1.
Fig. 4 is phase lock circuitry schematic diagram in Fig. 1.
Fig. 5 is super low noise constant-temperature crystal oscillator circuit theory diagrams in Fig. 1.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described:
Shown in Fig. 1-Fig. 5, a kind of high frequency points high stable low-noise constant-temperature crystal oscillator, comprises high stable constant-temperature crystal oscillator circuit 21, phase lock circuitry 22, super low noise constant-temperature crystal oscillator circuit 23 and signal multiplication filtering and amplifying circuit 10; Described high stable constant-temperature crystal oscillator circuit 21 and super low noise constant-temperature crystal oscillator circuit 23 are electrically connected with phase lock circuitry 22 respectively, phase lock circuitry 22 use high stable constant-temperature crystal oscillator circuit 21 lock super low noise constant-temperature crystal oscillator circuit 23; Described signal multiplication filtering and amplifying circuit 10 is provided with input 33 and high frequency output end 32, and input 33 is electrically connected with super low noise constant-temperature crystal oscillator circuit 23.
As shown in Figure 3, described high stable constant-temperature crystal oscillator circuit 21 comprises first crystal X1, the first high-accuracy thermostat and for making first crystal X1 produce Pierre's Si triode oscillating circuit 40 of frequency, first crystal X1 is arranged in the first high-accuracy thermostat and with Pierre's Si triode oscillating circuit 40 and is electrically connected.Described first crystal X1 is JZT84S106U3V18 crystal.C11 and L2 B mould in series Suppression network in described Pierre's Si triode oscillating circuit, produce the B mould frequency that suppresses overtone crystal; Inductance L 3 and capacitor C 10 formation C in parallel mould Suppression network, produce and suppress overtone crystal harmonic frequency.Accurate thermostat is crystal constant temperature at fixing temperature spot, and temperature fluctuation is less than 0.01 ℃; Suppression network plays the effect that inhibition does not need frequency, and unwanted fundamental frequency, overtone frequency suppresses.
Described super low noise constant-temperature crystal oscillator circuit 23 comprises the second crystal X2, the second high-accuracy thermostat and for making the second crystal X2 produce Pierre's Si oscillating circuit of frequency, the second crystal X2 is arranged in the second high-accuracy thermostat and with Pierre's Si oscillating circuit and is electrically connected.Described the second crystal X2 is JZT55S107U3V10 crystal.In a described Pierre Si oscillating circuit, CS is phase angle compensation electric capacity, plays and meets zero phase equilibrium condition.C1 and C2 are harmonic suppression network, and capacitor C L can get back to the frequency school of oscillator the nominal frequency of resonator.R1 is the feedback resistance of inverter U1, and it is biased in inverter in linear zone, so that the input impedance of inverter is mated with crystal.
All not shown in above-mentioned the first high-accuracy thermostat and the second high-accuracy thermostat figure.
Described phase lock circuitry 22 is PLL phase lock circuitry, and this circuit is provided with single-chip microcomputer 20 and phase discriminator, and high stable constant-temperature crystal oscillator circuit 21 and super low noise constant-temperature crystal oscillator circuit 23 are electrically connected with the phase discriminator of PLL phase lock circuitry 22 respectively.The model of described single-chip microcomputer 20 is 12F629, and the model of phase discriminator is LMX2306.
Described signal multiplication filtering and amplifying circuit 10 comprises the first frequency multiplier circuit 24, the first bandwidth-limited circuit 25, the first amplifying circuit 26, the second bandwidth-limited circuit 27, the second frequency multiplier circuit 28, the second amplifying circuit 29, the 3rd filter circuit 30, shaping match circuit 31 and the high frequency output end 32 being electrically connected successively.
Described the first frequency multiplier circuit 24 and the second frequency multiplier circuit 28 are the passive frequency multiplier circuit that is provided with passive frequency multiplier.Passive frequency multiplier model is AMK-2-13.
Described the first amplifying circuit 26 and the second amplifying circuit 29 are equipped with low noise amplifier.The model of described low noise amplifier is UPC2771TB.
Described the 3rd filter circuit 30 is provided with the dielectric filter that model is HDF398A.
Described shaping match circuit 31 is ∏ type impedance matching network circuit, and this circuit has the effect of coupling output and Input matching, strengthens the load-carrying ability of output.
Its operation principle is: high stable constant-temperature crystal oscillator circuit 21 produces 100MHz signal (the aging ﹤ 0.5ppb of the 10MHz constant-temperature crystal oscillator temperature characterisitic ﹤ 5ppb of high stable producing by PLL phase lock circuitry lock super low noise constant-temperature crystal oscillator circuit 23 after the 10MHz signal of high stable; Be better than-170dBc/Hz of ultra-low noise constant-temperature crystal oscillator 100MHz signal phase noise 100KHz, be better than-158dBc/Hz of 1KHz).The high stable ultra-low noise 100MHz signal of locking is inputted the first frequency multiplier circuit 24, this signal after passive frequency multiplier (AMK-2-13) is processed, obtains the sine wave signal of a 200MHz in the first frequency multiplier circuit 24 at the output of passive frequency multiplier (AMK-2-13).Described PLL phase lock circuitry is comprised of single-chip microcomputer 12F629 model chip and phase discriminator LMX2306 model chip, 10MHz standard frequency is inputted by LMX2306 model chip the 8th pin (PLO pin), 100MHz frequency signal is by LMX2306 model chip the 6th pin (CPO pin) input, and 10MHz frequency and 100MHz frequency are carried out frequency division, comparison at LMX2306 model chip.From an error voltage of LMX2306 model chip crus secunda output, after loop filter filters radio-frequency component, export the variable capacitance diode of a direct current signal modulation 100MHz crystal oscillator, thereby the frequency of modulation 100MHz, keep ω i=ω o, the phase error of two signals is φ (constant), loop-locking.
The sine wave signal of 200MHz, by after 200MHzLC the first bandwidth-limited circuit 25, filters fundamental frequency signal 100MHz and high order harmonic component.200MHz signal after the first bandwidth-limited circuit 25 enters the first amplifying circuit 26 and amplifies through the low noise amplifier (UPC2771TB) in this first amplifying circuit 26, and the 200MHz signal after amplification is again by 200MHzLC the second bandwidth-limited circuit 27.
At the 200MHz sine wave signal of the second bandwidth-limited circuit 27 outputs, enter the passive frequency multiplier (AMK-2-13) of the second frequency multiplier circuit 28, output at passive frequency multiplier obtains 400MHz sine wave signal, the signal of 400MHz is by 400MHzLC band pass filter and the second amplifying circuit 29, filter signal and the high order filtering of 200MHz, 400MHz signal by 400MHzl band pass filter enters low noise amplifier (UPC2771TB) amplification in the second amplifying circuit 29, export a 10dbm left and right sine wave signal, 10dBm signal enters the 3rd filter circuit medium filter (HDF398A) and filters 100MHz, 200MHz signal and high order filtering.Through the 400MHz signal of dielectric filter through shaping match circuit 31(∏ type impedance matching network circuit) after be connected with high frequency output end 32.
Claims (7)
1. a high frequency points high stable low-noise constant-temperature crystal oscillator, is characterized in that, comprises high stable constant-temperature crystal oscillator circuit (21), phase lock circuitry (22), super low noise constant-temperature crystal oscillator circuit (23) and signal multiplication filtering and amplifying circuit (10);
Described high stable constant-temperature crystal oscillator circuit (21) and super low noise constant-temperature crystal oscillator circuit (23) are electrically connected with phase lock circuitry (22) respectively, high stable constant-temperature crystal oscillator circuit (21) lock super low noise constant-temperature crystal oscillator circuit (23) for phase lock circuitry (22);
Described signal multiplication filtering and amplifying circuit (10) is provided with input (33) and high frequency output end (32), and input (33) is electrically connected with super low noise constant-temperature crystal oscillator circuit (23).
2. high frequency points high stable low-noise constant-temperature crystal oscillator according to claim 1, it is characterized in that, described high stable constant-temperature crystal oscillator circuit (21) comprises first crystal (X1), the first high-accuracy thermostat and for making first crystal (X1) produce Pierre's Si triode oscillating circuit (40) of frequency, first crystal (X1) is arranged in the first high-accuracy thermostat and with Pierre's Si triode oscillating circuit (40) and is electrically connected.
3. high frequency points high stable low-noise constant-temperature crystal oscillator according to claim 1, it is characterized in that, described super low noise constant-temperature crystal oscillator circuit (23) comprises the second crystal (X2), the second high-accuracy thermostat and for making the second crystal (X2) produce Pierre's Si oscillating circuit of frequency, the second crystal (X2) is arranged in the second high-accuracy thermostat and with Pierre's Si oscillating circuit and is electrically connected.
4. high frequency points high stable low-noise constant-temperature crystal oscillator according to claim 1, it is characterized in that, described phase lock circuitry (22) is PLL phase lock circuitry (22), this circuit is provided with single-chip microcomputer (20) and phase discriminator, and high stable constant-temperature crystal oscillator circuit (21) and super low noise constant-temperature crystal oscillator circuit (23) are electrically connected with the phase discriminator of PLL phase lock circuitry (22) respectively.
5. high frequency points high stable low-noise constant-temperature crystal oscillator according to claim 1, it is characterized in that, described signal multiplication filtering and amplifying circuit (10) comprises the first frequency multiplier circuit (24), the first bandwidth-limited circuit (25), the first amplifying circuit (26), the second bandwidth-limited circuit (27), the second frequency multiplier circuit (28), the second amplifying circuit (29), the 3rd filter circuit (30), shaping match circuit (31) and the high frequency output end (32) being electrically connected successively.
6. high frequency points high stable low-noise constant-temperature crystal oscillator according to claim 5, is characterized in that, described the first frequency multiplier circuit (24) and the second frequency multiplier circuit (28) are the passive frequency multiplier circuit that is provided with passive frequency multiplier.
7. high frequency points high stable low-noise constant-temperature crystal oscillator according to claim 5, is characterized in that, described the first amplifying circuit (26) and the second amplifying circuit (29) are equipped with low noise amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410297001.7A CN104052465A (en) | 2014-06-28 | 2014-06-28 | High-frequency-point, high-stability, low-noise and constant-temperature crystal oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410297001.7A CN104052465A (en) | 2014-06-28 | 2014-06-28 | High-frequency-point, high-stability, low-noise and constant-temperature crystal oscillator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104052465A true CN104052465A (en) | 2014-09-17 |
Family
ID=51504890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410297001.7A Pending CN104052465A (en) | 2014-06-28 | 2014-06-28 | High-frequency-point, high-stability, low-noise and constant-temperature crystal oscillator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104052465A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107666284A (en) * | 2017-11-10 | 2018-02-06 | 广东圣大电子有限公司 | A kind of high frequency crystal oscillator |
| EP3487069A1 (en) | 2017-11-17 | 2019-05-22 | Axis AB | Crystal oscillator circuit |
| CN113285686A (en) * | 2020-02-19 | 2021-08-20 | 瑞昱半导体股份有限公司 | Low-noise low-radiation crystal oscillator and method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090237131A1 (en) * | 2008-03-21 | 2009-09-24 | Broadcom Corporation | Phase locked loop |
| CN201869161U (en) * | 2010-12-03 | 2011-06-15 | 东莞市金振电子科技有限公司 | High-frequency high-stability phase-locking OCXO |
| CN202929184U (en) * | 2012-12-11 | 2013-05-08 | 吉林大学 | Helium optical pump magnetic resonance signal fully digital detection device |
-
2014
- 2014-06-28 CN CN201410297001.7A patent/CN104052465A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090237131A1 (en) * | 2008-03-21 | 2009-09-24 | Broadcom Corporation | Phase locked loop |
| CN201869161U (en) * | 2010-12-03 | 2011-06-15 | 东莞市金振电子科技有限公司 | High-frequency high-stability phase-locking OCXO |
| CN202929184U (en) * | 2012-12-11 | 2013-05-08 | 吉林大学 | Helium optical pump magnetic resonance signal fully digital detection device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107666284A (en) * | 2017-11-10 | 2018-02-06 | 广东圣大电子有限公司 | A kind of high frequency crystal oscillator |
| EP3487069A1 (en) | 2017-11-17 | 2019-05-22 | Axis AB | Crystal oscillator circuit |
| KR20190056972A (en) * | 2017-11-17 | 2019-05-27 | 엑시스 에이비 | Crystal oscillator circuit |
| US10608587B2 (en) | 2017-11-17 | 2020-03-31 | Axis Ab | Crystal oscillator circuit |
| KR102408539B1 (en) | 2017-11-17 | 2022-06-15 | 엑시스 에이비 | Crystal oscillator circuit |
| CN113285686A (en) * | 2020-02-19 | 2021-08-20 | 瑞昱半导体股份有限公司 | Low-noise low-radiation crystal oscillator and method thereof |
| CN113285686B (en) * | 2020-02-19 | 2024-02-13 | 瑞昱半导体股份有限公司 | Low noise low radiation crystal oscillator and method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104202048B (en) | Broadband totally-integrated phase-locked loop frequency synthesizer | |
| CN106877819B (en) | Voltage controlled oscillator based on composite resonator | |
| CN103475310B (en) | Low power consumption injection locked frequency tripler | |
| CN103475309A (en) | Constant tuning gain voltage-controlled oscillator | |
| CN207504824U (en) | A kind of high frequency crystal oscillator | |
| CN104052465A (en) | High-frequency-point, high-stability, low-noise and constant-temperature crystal oscillator | |
| CN106374838A (en) | LC oscillator having automatic amplitude control function and used for FW-UWB transmitter | |
| CN107947790B (en) | Broadband fine stepping low-noise frequency source | |
| CN106231777B (en) | A kind of signal source of high stability of superconducting cyclotron | |
| CN205670764U (en) | A kind of reference source system utilizing phase-locked loop pll and frequency multiplication | |
| CN111342775B (en) | Dual-core oscillator based on current multiplexing and transformer coupling buffer amplifier | |
| US20120319787A1 (en) | Voltage controlled oscillator having a resonator circuit with a phase noise filter | |
| US20190081595A1 (en) | Voltage waveform shaping oscillator | |
| CN102163970A (en) | Phase-locked dielectric resonator oscillator with low phase noise at microwave frequency band | |
| CN201878129U (en) | Microwave frequency band low-phase noise locking phase medium oscillator | |
| CN205792524U (en) | Radar clock multiplier based on step-recovery diode | |
| US9106179B2 (en) | Voltage-controlled oscillators and related systems | |
| CN103208991A (en) | Voltage controlled oscillator based on inductance bias | |
| CN205647494U (en) | Ultra wide band low phase noise hangs down stray frequency synthesizer | |
| CN111313892B (en) | Wide locking range switchable dual-core injection locking frequency divider | |
| CN203896309U (en) | Low-noise crystal oscillator circuit | |
| CN105429632B (en) | The microwave local signal generator of small integrated | |
| CN105634482A (en) | Satellite SRD-based frequency multiplication phase locking frequency source | |
| TW201743556A (en) | Voltage-controlled oscillator capable of increasing inductance and reducing area and cost | |
| RU86816U1 (en) | CONTROLLED AUTOGENERATOR |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140917 |