CN106533163A - Photovoltaic power converter - Google Patents
Photovoltaic power converter Download PDFInfo
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- CN106533163A CN106533163A CN201610045963.2A CN201610045963A CN106533163A CN 106533163 A CN106533163 A CN 106533163A CN 201610045963 A CN201610045963 A CN 201610045963A CN 106533163 A CN106533163 A CN 106533163A
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- photovoltaic
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- switch module
- power converter
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- 238000001914 filtration Methods 0.000 claims description 24
- 230000005611 electricity Effects 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 14
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000012938 design process Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 7
- 238000005457 optimization Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- H02J3/383—
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- H02J3/385—
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
Abstract
The present invention discloses a photovoltaic power converter comprising an input terminal, an input filter assembly, a first switch module connected in series, a second switch module connected in parallel, an output filter assembly and an output terminal cascaded in sequence. The first switch module and the second with module both comprise a MOS transistor. The source drain on resistance of the MOS transistor of the first switch module is smaller than the source drain on resistance of the MOS transistor of the second switch module. For example, the ratio of the source drain on resistance of the MOS transistor of the first switch module to the source drain on resistance of the MOS transistor of the second switch module is between 1: 8 and 1: 1.2. Thus, the present invention provides a combination method and a parameter ratio of switch modules for optimizing the efficiency of the photovoltaic power converter. The design process of the photovoltaic power converter is simplified, the efficiency is improved, and great economic benefits are produced.
Description
Technical field
The present invention relates to photovoltaic generation, relates more specifically to photovoltaic generating system and photovoltaic power therein turns
Parallel operation.
Background technology
In recent years, with the extensive popularization of the photovoltaic generating system of worldwide and Chinese market, light
Volt generating has become the outstanding person in new energy field.
Fig. 1 is the schematic diagram of typical photovoltaic generating system.As shown in figure 1, typical power station photovoltaic is sent out
Electric system is broadly divided into two parts：A plurality of photovoltaic group string and inversion of confluxing.The function of inversion of confluxing is handle
The electric energy produced in a plurality of photovoltaic group string carries out collecting, inversion and grid-connected output.A plurality of photovoltaic group string is formed
Photovoltaic module array be the unit exposed to sunlight and generate electricity, wherein photovoltaic module first go here and there after simultaneously, even
It is connected in header box, carries out the generation and transmission of electric energy.
From the above it can be seen that single photovoltaic module is in power station, it is one with other photovoltaic module strings
Rise and use.By about 16-20 photovoltaic module, concatenation is formed one typical photovoltaic group string hand in hand.Light
Volt component is serially connected generating, can produce a typical component mismatch problem.Component mismatch is referred to respectively
Component generates difference on power generation performance because of various reasons.The source of difference may be from component itself
Characteristic when dispatching from the factory is not quite identical, different batches, cell piece material producing process difference, streamline life
Index change of product etc., it is also possible to which what is produced in the use of component blocks, dust, fallen leaves, bird
Excrement, cloud process etc..Even if the two factors are completely the same, with pushing away for photovoltaic module pot life
Move, component can produce aging, and different component aging speed are incomplete same.When component mismatch phenomenon
During generation, due to component series connection using method, the weaker component of power generation performance can cause with a string other
Component generating capacity can not be played completely, cause the decline of system entirety generating capacity.So, in component
In the service life phase of 20-30, because the mismatch phenomenon that a variety of causes is caused is caused under system generated energy
Drop, causes the very big waste of the potential generating capacity of photovoltaic plant.Photovoltaic plant and distributed photovoltaic on ground
In power station component mismatch phenomenon all exist, wherein photovoltaic power station due to construction quality, using ring
Border, safeguards the reason such as improper, mismatches phenomenon and is particularly acute.Draw because blocking during Fig. 2 is above-mentioned factor
The schematic diagram that the generated output that the mismatch for rising is caused declines.
As known from the above, component mismatch phenomenon belongs to the problem for constantly existing in photovoltaic plant, with
The passage of time, this phenomenon can aggravate.Essentially, component mismatches phenomenon and is primarily referred to as difference
The generating capacity of component is because a variety of causes generates difference.This species diversity is mainly manifested in output current
It is inconsistent.Identical two components, in same power station, presence for above-mentioned reasons, output
Current characteristics also will not be completely the same.
Problem based on more than, needs one kind to can solve the problem that the unmatched device of component in photovoltaic generating system,
More specifically, there is provided a kind of photovoltaic power converter, with improve generating efficiency.
The content of the invention
It is an advantage of the invention to provide component is mismatched during one kind can solve the problem that photovoltaic generating system
Device, more specifically, there is provided a kind of photovoltaic power converter, with improve generating efficiency.
Further object is that, for solving the combination of photovoltaic power converter breaker in middle module
With parameter logistic problem, there is provided a kind of switch module for optimizing photovoltaic power converter efficiency
Combined method and parameter logistic.
According to the first aspect of the invention, there is provided a kind of photovoltaic power converter, including：Input；It is defeated
Go out end；Switch module；With input and output filtering unit.Wherein, the input filter component, described
Switch module and the output filtering unit priority level are associated between input and output end.Wherein, it is described
Switch module includes the second switch module of the first switch module connected and parallel connection, the first switch mould
Group and the second switch module include metal-oxide semiconductor (MOS) (MOS) transistor, and first opens
The source drain for closing the MOS transistor of module connects MOS crystal of the resistance less than second switch module
The source drain of pipe connects resistance.
Preferably, the source drain of the MOS transistor of the first switch module connects resistance and second
It is 1 that the source drain of the MOS transistor of switch module connects the ratio of resistance:8 to 1:1.2 between.
Preferably, the input has forward and reverse input terminal, for receives input voltage and defeated
Enter electric current.The output end has forward and reverse lead-out terminal, for exporting voltage and electricity after conversion
Stream.The first switch module is connected in series in the forward direction from positive input of input to output end
On the path of lead-out terminal, between input and output filtering unit.The second switch modules in parallel connection
After first switch module, one end is connected to the tie point of first switch module and output filtering unit,
The other end be connected to from the inverting input terminal of input to output end inverse output terminal path on,
Between input and output filtering unit.
Preferably, the first switch module includes one or more MOS transistors, and described second opens
Closing module includes one or more MOS transistors.
Preferably, the manufacturing process of the first switch module and the second switch module is same or similar.
Preferably, the first switch module and the second switch module are alternately opened and shut-off.
Photovoltaic power converter of the present invention is connected to the photovoltaic module in photovoltaic group string, photovoltaic substring
Or after cell piece.
According to the second aspect of the invention, there is provided a kind of photovoltaic generating system, including：Photovoltaic module array,
It is made up of a plurality of photovoltaic group string, for exposing to sunlight and generating electricity；With the Converting Unit that confluxes, for handle
The electric energy produced in a plurality of photovoltaic group string is collected, then inversion and grid-connected output.Wherein, photovoltaic group
Part is in parallel after first connecting, and is connected in the inversion box of the Converting Unit that confluxes, carry out electric energy generation and
Send.And wherein, connect such as after the photovoltaic module in photovoltaic group string, photovoltaic substring or cell piece
Photovoltaic power converter described in first aspect present invention.
The design process of photovoltaic power converter can be simplified by applying the present invention, efficiency is improved, produced
Great economic benefit.
Description of the drawings
Below with reference to the accompanying drawings it is described in conjunction with the embodiments the present invention.In the accompanying drawings：
Fig. 1 is the schematic diagram of typical photovoltaic generating system.
Fig. 2 is because blocking the schematic diagram of the generated output decline that the mismatch for causing is caused.
Fig. 3 illustrates the principle of typical photovoltaic power converter.
Fig. 4 illustrates the structure of typical photovoltaic power converter.
Fig. 5 shows the schematic diagram of the SW impulse waveforms of photovoltaic power converter of the invention.
Fig. 6 illustrates shape of the photovoltaic power converter of the invention in true application scenarios
Condition.
Fig. 7 is a kind of structural representation of typical n-type MOS transistor.
Fig. 8 illustrates the canonical process that MOS transistor is opened.
Fig. 9 describes the constant conduction of the MOS transistor in photovoltaic power converter of the invention
Power loss, open switch-off power loss and total power attenuation between rule.
Figure 10 is the power loss curve synoptic diagram of the switch A and B of example MOS transistor combination one.
Figure 11 is the power loss curve synoptic diagram of the switch A and B of example MOS transistor combination two.
Figure 12 is the power loss curve synoptic diagram of the switch A and B of example MOS transistor combination three.
Specific embodiment
The specific embodiment of the present invention is explained in detail below in conjunction with accompanying drawing.
The general principle of photovoltaic power converter is the conversion by certain way so that originally electric current is not complete
The component of full matching, realizes that real-time current is matched, so as to eliminate each component in group string generating capacity not
Matching phenomenon, improves the overall generated energy of system.The lifting of this generated energy is at every moment all present,
The economic benefit and return produced in the life-span of photovoltaic plant 20-30 is considerable.
Fig. 3 illustrates the principle of typical photovoltaic power converter.
The left-half of Fig. 3 is that the photovoltaic module for being fitted without photovoltaic power converter (is also applied for photovoltaic
Cell piece substring in component, or single battery piece), its power generation characteristics in photovoltaic plant shows as
Exit potential VoutWith outlet electric current Iout.Because the I of each componentoutIt is incomplete for various reasons, from
And produce and mismatch phenomenon.The right half part of Fig. 3 is the photovoltaic module for being mounted with photovoltaic power converter.
Photovoltaic power converter is first connected on component, (shows as outlet electricity through conversion with new outlet characteristic
Pressure Vout1With outlet electric current Iout1) replace photovoltaic module script outlet characteristic.Wherein Iout1Be with it is same
Other assemblies very same current value in group string.So, mismatch phenomenon to remove, power station system
The overall generated energy of system will be lifted.
It is assumed that the efficiency of photovoltaic power converter is the 100% (effect of photovoltaic power converter under normal circumstances
100%) rate is close to, then meet basic law of conservation of energy in the operation principle of photovoltaic power converter：
Vout*Iout=Vout1*Iout1 (1)
Fig. 4 illustrates the structure of typical photovoltaic power converter.
Photovoltaic power converter as shown in Figure 4 includes：Input, output end, switch module and filtering
Component.As illustrated, filtering unit can include input filter component and output filtering unit.Input filter
Ripple component, switch module and output filtering unit level are associated between input and output end.Art technology
Personnel should be appreciated that two filtering units in Fig. 4 are produced by element or parasitic parameter, its presence or absence
Have no effect on the following analysis to switching module.Wherein, the switch module includes the first switch connected
Module A and the second switch module B of parallel connection.
More specifically, input has forward and reverse input terminal, for receives input voltage and input
Electric current VoutAnd Iout.Output end has forward and reverse lead-out terminal, for exporting the voltage after conversion
With electric current Vout1And Iout1.First switch module A be connected in series in from the positive input of input to
On the path of the positive lead-out terminal of output end, between input and output filtering unit.Second switch module
After B is connected in first switch module A in parallel, one end is connected to first switch module A with output filter
The tie point of ripple component, the other end are connected to from the inverting input terminal of input to the reverse defeated of output end
Go out on the path of terminal, be input into and export between filtering unit.
The input of photovoltaic power converter is VinIt is connected on output end V of a photovoltaic moduleoutOn,
Output current I of a upper photovoltaic moduleoutInto the input of photovoltaic power converter.Photovoltaic power turns
The output end of parallel operation is Vout1, output current is Iout1。Iout1With the output electricity of other assemblies in group string
Stream is consistent, so as to eliminate mismatch phenomenon.Formula (1) is met in this structure chart, it is assumed here that photovoltaic
Power converter efficiency is 100%.
This photovoltaic power converter a pair of switches A and B by series connection and parallel connection respectively, and filtering group
Part is constituted.Wherein filtering unit can be made up of components and parts such as inductor, capacitor, resistor etc.,
It is also likely to be to be made up of inductance parasitic in applied environment, electric capacity, resistance.Illustrate, photovoltaic group string
Stray inductance is included in the cable that middle component is interconnected just, so as to help through photovoltaic power converter
Structure.In the same manner, photovoltaic group string is connected to the input of photovoltaic DC-to-AC converter, and the input of photovoltaic DC-to-AC converter
Include capacitor or have parasitic capacitance, so as to help through the structure of photovoltaic power converter.
Switch A and switch B in this photovoltaic power converter is worked using complement mode, that is, replace
Turn on and off.When switch A is opened and switched B shut-offs, SW points connect VinLevel；Switch
A is turned off, and switchs B simultaneously or after a small amount of delay is opened, SW points connect the low level of lower section or
Person is grounded.When switch B shut-offs, simultaneously or after a small amount of delay is opened, SW points connect switch A again
Logical Vin(component output voltage Vout) level, so circulate repeatedly, so as to form a succession of in SW points
Repetition pulse.In this pulse stable state, pulse it is high-end for VinLevel is close, the low side of pulse
For low level or ground or close.
Fig. 5 shows the schematic diagram of the SW impulse waveforms of photovoltaic power converter of the invention.Often
The high-end retention time of individual pulse be D, it is high-end with low side retention time sum T-shaped into a complete week
Phase.SW's continuously repeats pulse with the feature presence of dutycycle D/T, through low-loss filtering unit
Filtering, produces output voltage Vout1.Equation below describes Vout1And Vout(i.e. Vin) between
Relation：
Vout* (D/T)=Vout1 (2)
Wherein D/T≤1.Therefore Vout1≤Vout, this photovoltaic power converter belongs to buck converter.
Further, (it is assumed that efficiency is 100%) can be drawn by formula (1) and (2)：
Iout1=Iout/(D/T) (3)
Due to D/T≤1, can from which further follow that, Iout1≥Iout。
Fig. 6 illustrates shape of the photovoltaic power converter of the invention in true application scenarios
Condition.
Photovoltaic power switch input is connected on the output end of each photovoltaic module of photovoltaic group string, photovoltaic work(
The output termination photovoltaic cable of rate converter goes to the photovoltaic apparatus such as other photovoltaic modulies or inverter.Its
Middle cable resistance represents the resistance of photovoltaic cable itself or impedance, or accesses device and equipment in the middle of other
Impedance etc..As can be seen from Figure 6 Iout1Flow through this kind of impedance and go to other assemblies or equipment.According to
Electricity fundamental formular：
POhmic loss power=RResistance valuex IThe electric current flowed through on resistance 2 (4)
Therefore in the presence of cable resistance, Iout1Should be the smaller the better, so as to reduce the damage on cable resistance
Power is lost, the overall power output of photovoltaic system is improved.
As mentioned above, according to formula (3), draw Iout1≥Iout, therefore such voltage-dropping type photovoltaic work(
Rate converter D/T should be as high as possible, better closer to 1, so that Iout1It is as little as possible, it is close to
Iout。
In actual applications, several situations (being not limited only to this) limit the scope of D/T：
1. component electricity generation situation is variant.Due to a string of component strings together, therefore all component connect
Meet the I after photovoltaic power converterout1Identical, but due to each component electricity generation situation it is variant, i.e.,
IoutDifference, therefore, the distribution of D/T and VoutDistribution it is related.This difference is elapsed over time, group
The ager process of part can become gradually to increase.On average, the distribution of D/T has from 100% to 70%
May.
2., when inverter is accessed with a string of components, inverter often has MPPT maximum power point tracking function.
As inverter control loop is relatively slow, the degree of accuracy is not high, therefore Iout1I should be higher byoutA part,
Just facilitate the tracking and realization of maximum power point.If Iout1It is too near to or is equal to Iout, then due to tracking essence
Degree problem, the possible Jing of inverter loop often only can be extracted less than IoutIout1Electric current, causes generated output
Can not be fully drawn out.From this, D/T should deviate 100%, such as do 95% upper limit.
3. the value of D/T can reach 100% in theory, but in side circuit, switch opening for A
It is logical be need drive circuit in electric capacity charge in advance, be ready to open switch A.This warming-up exercise
The time of the D/T for needing occupancy certain.In general, the D/T times for having about 5% need to do this
Warming-up exercise.Therefore, for this, the upper limit of D/T may accomplish 95%.
4. in addition, turning on and off for two switches is required for the time.If switch A and B is opened simultaneously
It is logical, short circuit will be caused, two switches will be burnt.Therefore the alternating of switch A and B turns on and off necessary
With certain Dead Time (dead time).These times will take the value of D/T.This also will
The upper limit of D/T is asked to be less than 100%.
More than several situations can carry out simultaneously, therefore integrate and see, the best-of-breed technology value of D/T is main
It is distributed in 70% to 100% interval.
In engineering design, may be designed generally according to the worst, situation 1 belongs to normality in addition, constantly
Carve and all exist and be gradually deteriorated in the 20-30 service lifes of photovoltaic module, therefore, reasonably
D/T designs should meet i.e. D/T and be approximately equal to 70%-80%.This and biswitch are big absolutely in power electronics
Most application scenarios are less than 50%, and the situation close to 20%-30% is very different, also generates to double
The different of switch parameter require and optimization method.
In the practical application of power electronics, metal-oxide semiconductor (MOS) (MOS) transistor (or
The semiconductor switch of other silicon substrates and non-silicon-based, p-type or N-shaped or other mixed types etc., can be point
Vertical device, it is also possible to the switch sections being integrated in control chip) it is a kind of representational for photovoltaic
The switching device of power converter.
Fig. 7 is a kind of structural representation of typical n-type MOS transistor.P-type MOS transistor
Structure is similar therewith.
As shown in fig. 7, n-type MOS transistor has three electrodes：Grid (G), source electrode (S) and drain electrode
(D).Wherein grid is used for controlling the resistance R between source electrode and drain electrodeds.When grid and voltage between source electrodes
VgsReach certain threshold value, the resistance R between source electrode and drain electrodedsTo become very from very high (more than megaohm)
Low (milliohm magnitude), so that high current passes through between source electrode and drain electrode.At this moment RdsCan be by
Referred to as source drain connects resistance Rds(on).As one timing of drive circuit driving force, Rds(on)It is less, it is past
Toward the electric capacity C between grid and source capacitance and grid and drain electrodeGSAnd CGDIt is bigger, so that
The speed that MOS transistor is turned on and off is slower；Vice versa.
Fig. 8 illustrates the canonical process that MOS transistor is opened.
In constant conduction, power loss is MOS transistor：
PLoss_ is turned on=I2*Rds(on)*D/T (5)
Wherein I is conducting electric current, is I in photovoltaic power converterout1, because Iout1It is external factor
Determine, it is assumed that first do not consider D/T (dutycycle, i.e. MOS transistor ON time accounting), then Rds(on)
Conducting power loss will be determined.
When turning on and off, power loss is metal-oxide-semiconductor：
PLoss_ is switched=1/2*I*V* (tr+tf) (6)
Wherein trAnd tfIt is to turn on and off the time respectively.T in Fig. 8d(on)And td(off)Respectively open and prolong
Slow time and turn-off delay time.Because I is fixed as Iout1, V is fixed as Vin, therefore turn on and off
Power loss by turning on and off time tr+tfDetermine.
Therefore total losses of the MOS transistor in photovoltaic power converter are：
PLoss_ is total=PLoss_ is turned on+PLoss_ is switched (7)
Can draw from analysis above, if it is possible to both reduced Rds(on), t can be reduced againr+tf, then
Total losses of the MOS transistor in photovoltaic power converter can be kept to minimum.In fact, the two
Factor is conflict.It is above already explained above in mos transistor structure analysis：Circuit other
In the case of key element is immovable, Rds(on)Reduction, often lead to the electric capacity and grid between grid and source electrode
Electric capacity C between pole and drain electrodeGSAnd CGDIncrease.When drive circuit does not change, this can cause MOS
Opening for transistor turns off slack-off, i.e. tr+tfIt is elongated, thus while PLoss_ is turned onDiminish, but PLoss_ is switched
Can increase, so that PLoss_ is totalIt is possible to become big.It is as the same in the same manner：If reducing CGSAnd CGD,
Although MOS transistor opens the P of shut-offLoss_ is switchedCan reduce, but PLoss_ is turned onCan increase, again result in
PLoss_ is totalIt is possible to become big.
Fig. 9 describes the constant conduction of the MOS transistor in photovoltaic power converter of the invention
Power loss, open switch-off power loss and total power attenuation between rule.Work as PLoss_ is totalReach
During the minimum point of optimization, it is PLoss_ is switchedAnd PLoss_ is turned onBetween a cleverly equalization point.
In analysis more than, ON time accounting D/T of MOS transistor is not considered.It is easy to
Find out, for any one switch, PLoss_ is totalOptimization minimum point position and D/T it is directly related.
When D/T is larger, PLoss_ is totalOptimization minimum point will be skewed towards in CGS+CGDLarger and Rds(on)It is less
Direction, when D/T is less, PLoss_ is totalOptimization minimum point will be skewed towards in CGS+CGDLess and Rds(on)
Larger direction.
According to the analysis to Fig. 6, it is known that D/T is reasonable in 70%-100%, wherein D is
The duration of the pulse high point of SW points.For switch A and B in Fig. 4, the arteries and veins of SW points
The duration D for leaping high a little is equal to the service time (ignoring the switching time for turning on and off) of switch A,
It is also equal to switch the turn-off time (ignoring the switching time for turning on and off) of B.Therefore switch opening for A
Logical time accounting is D/T, and accounting time service time for switching B is 1-D/T.
Can be from which further followed that according to the analysis to Fig. 9, if switch A is similar with the manufacturing process of B
(such as all use the external MOS transistor of same class, or all built-in and adopt similar technique), then
Switch A should adopt CGS+CGDLarger and Rds(on)Less device, and switch B and should adopt CGS
+CGDLess and Rds(on)Larger device.That is, according to the present invention, the MOS for switching A is brilliant
The source drain of body pipe connects source drain connection resistance of the resistance less than the MOS transistor of switch B.
In the manufacturing process of MOS transistor, often using the device to same technique productions (not only
It is limited to this) carry out various sizes of cutting to realize different CGS+CGDAnd Rds(on)Combination.Such as,
When cut lengths ratio is 2:When 1, then CGS+CGDRatio often reach or be close to 2:1, and Rds(on)
Ratio then reach or be close to 1:2.Consider, to Rds(on)Ratio carry out preferably, can be preferably
The parameter logistic of selecting switch A and switch B, so that realize the Performance optimization of photovoltaic energy optimizer.
Referred to herein as switch A and B can be external switch device, or built-in switching device；
A or B that possibly Single switch is formed, it is also possible to A or B that Multi- Switch combination (as in parallel) is formed,
It is also likely to be A or B that a large amount of tiny devices are combined composition.
From in terms of practice and test experience, the R of A and switch B is switchedds(on)Ratio be
1:8 to 1:1.2 (8)
This condition of Shi Fuhe (i.e. between 0.125 to 0.833).Therefore, photovoltaic work(of the invention
In rate converter, it is desirable to switch the R of A and switch Bds(on)Ratio fall in the range of this.
The MOS combinations that the following is three kinds of examples are calculated.
【Combination one】
By taking the MCP87050 transistor technologies of Microchip companies production as an example.
The R of MCP87050ds(on)About 5 milliohms.QGFor 12.5nC, it is gate charges to 4.5V institutes
The quantity of electric charge for needing, can use CGS+CGD=QG/ 4.5V is calculated.
It is assumed that Iout1=5A, switching frequency 200kHz, D/T=95%, drive circuit electric current are 4A, VinFor
15V, then, as D/T=95%, the power loss curve for switching A and B is illustrated as shown in Figure 10.
It can be seen from fig. 10 that as D/T=95%, the optimal R of switch Ads(on)About 2.8 milliohms,
The optimal R of switch Bds(on)About 18 milliohms, switch the R of A and Bds(on)Ratio is 2.8:18=1:6.4.
【Combination two】
In combination one, if during D/T=85%, the power loss curve for switching A and B is illustrated as schemed
Shown in 11.
It can be seen from fig. 11 that as D/T=85%, the optimal R of switch Ads(on)About 3.2 milliohms,
The optimal R of switch Bds(on)About 9 milliohms, switch the R of A and Bds(on)Ratio is 3.2:9=1:2.82.
【Combination three】
In combination one, if during D/T=70%, the power loss curve for switching A and B is illustrated as schemed
Shown in 12.
In figure 12 it can be seen that as D/T=70%, the optimal R of switch Ads(on)About 3.5 milliohms,
The optimal R of switch Bds(on)About 5 milliohms, switch the R of A and Bds(on)Ratio is 3.5:5=1:1.43.
The best of breed example of A and B, other techniques and confession is switched when analysis is different D/T above
The switch of business is answered to have similar rule.Equally, when electric current, voltage or other requirement changes, also can
Cause the optimal R of switch A and Bds(on)The change of ratio.
As described above, a kind of the invention provides switching molding for optimizing photovoltaic power converter efficiency
The combined method of group and parameter logistic.The design of photovoltaic power converter can be simplified by applying the present invention
Process, improves efficiency, produces great economic benefit.
In the explanation of accompanying drawing and the above, although photovoltaic power converter is connected to photovoltaic by diagram or description
After component, but spirit and scope of the invention, photovoltaic power converter not only can be connected to light
After photovoltaic module in volt group string, it is also possible to after being connected to photovoltaic substring or cell piece, so as to play
Same effect.
Various embodiments of the present invention and implementation situation is described above.But, the spirit of the present invention
With scope not limited to this.Those skilled in the art are possible to teaching of the invention and make and more should
With, and these applications are within the scope of the present invention.
Claims (10)
1. a kind of photovoltaic power converter, including：
Input；
Output end；
Switch module；With
Input filter component and output filtering unit,
Wherein, the input filter component, the switch module and the filtering unit level are associated in input
And output end between,
Wherein, the switch module includes the second switch module of the first switch module and parallel connection connected,
The first switch module and the second switch module include that metal-oxide semiconductor (MOS) (MOS) is brilliant
Body pipe, and the source drain of the MOS transistor of first switch module connects resistance less than second switch mould
The source drain of the MOS transistor of group connects resistance.
2. photovoltaic power converter as claimed in claim 1, wherein, the first switch module
The source drain of MOS transistor connects the source drain of resistance and the MOS transistor of second switch module
The ratio for connecting resistance is 1:8 to 1:1.2 between.
3. photovoltaic power converter as claimed in claim 1 or 2, wherein：
The input has forward and reverse input terminal, for receives input voltage and input current；
The output end has forward and reverse lead-out terminal, for exporting the voltage and current after conversion；
The first switch module is just connected in series in from the positive input of input to output end
To on the path of lead-out terminal, between input and output filtering unit；And
After the second switch modules in parallel is connected to first switch module, one end is connected to first switch
The tie point of module and output filtering unit, the other end are connected to from the inverting input terminal of input to defeated
On the path of inverse output terminal for going out end, between input and output filtering unit.
4. photovoltaic power converter as claimed in claim 1 or 2, wherein, the first switch mould
Group includes one or more MOS transistors, and the second switch module includes one or more MOS
Transistor.
5. photovoltaic power converter as claimed in claim 1 or 2, wherein, the first switch mould
The manufacturing process of group and the second switch module is same or similar.
6. photovoltaic power converter as claimed in claim 1 or 2, wherein, the first switch mould
Group and the second switch module are alternately opened and shut-off.
7. photovoltaic power converter as claimed in claim 1 or 2, which is connected in photovoltaic group string
After photovoltaic module, photovoltaic substring or cell piece.
8. a kind of photovoltaic generating system, including：
Photovoltaic module array, is made up of a plurality of photovoltaic group string, for exposing to sunlight and generating electricity；With
Conflux Converting Unit, for the electric energy produced in a plurality of photovoltaic group string is collected, then inversion
With grid-connected output,
Wherein, it is in parallel after photovoltaic module is first connected, it is connected in the inversion box of the Converting Unit that confluxes,
The generation and transmission of electric energy is carried out,
Wherein, after the photovoltaic module in photovoltaic group string, photovoltaic substring or cell piece, connection such as right will
Seek the photovoltaic power converter described in 1.
9. photovoltaic generating system as claimed in claim 8, wherein, in the photovoltaic power converter
In, the source drain of the MOS transistor of the first switch module connects resistance and second switch module
MOS transistor source drain connect resistance ratio be 1:8 to 1:1.2 between.
10. photovoltaic generating system as claimed in claim 8 or 9, wherein, turns in the photovoltaic power
In parallel operation：
The input has forward and reverse input terminal, for receives input voltage and input current；
The output end has forward and reverse lead-out terminal, for exporting the voltage and current after conversion；
The first switch module is just connected in series in from the positive input of input to output end
To on the path of lead-out terminal, between input and output filtering unit；And
After the second switch modules in parallel is connected to first switch module, one end is connected to first switch
The tie point of module and output filtering unit, the other end are connected to from the inverting input terminal of input to defeated
On the path of inverse output terminal for going out end, between input and output filtering unit.
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| CN201610045963.2A CN106533163A (en) | 2016-01-22 | 2016-01-22 | Photovoltaic power converter |
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| CN201610045963.2A CN106533163A (en) | 2016-01-22 | 2016-01-22 | Photovoltaic power converter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108233405A (en) * | 2017-11-24 | 2018-06-29 | 苏州桑普泰克光能科技有限公司 | Electric current autotracking photovoltaic module |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1453881A (en) * | 2002-04-26 | 2003-11-05 | 株式会社东芝 | Insulated-gate semiconductor apparatus |
| CN1536680A (en) * | 2003-04-07 | 2004-10-13 | 株式会社东芝 | Insulating grid type semiconductor device |
| CN1893111A (en) * | 2005-05-12 | 2007-01-10 | 谢福渊 | Elimination of gate oxide weak spot in deep trench |
| CN101931005A (en) * | 2009-06-24 | 2010-12-29 | 瑞萨电子株式会社 | Semiconductor device, method of manufacturing the same and power-supply device using the same |
| CN102290985A (en) * | 2011-08-12 | 2011-12-21 | 南京航空航天大学 | Coupling inductor based voltage boosting and reducing direct current (DC) converter |
| CN102916614A (en) * | 2011-08-03 | 2013-02-06 | 台达电子企业管理（上海）有限公司 | Photovoltaic system and photovoltaic module with voltage balancers |
| CN102355131B (en) * | 2011-10-14 | 2014-01-29 | 矽力杰半导体技术(杭州)有限公司 | Hybrid control method and device of four-switch Buck-Boost converter |
| CN103560666A (en) * | 2013-11-14 | 2014-02-05 | 南京集能易新能源技术有限公司 | Four-switch voltage boosting and reducing converter with low ripples and control method thereof |
| CN103839982A (en) * | 2012-11-23 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Planar gate super-junction product gate layout structure |
| CN104465718A (en) * | 2013-09-20 | 2015-03-25 | 三垦电气株式会社 | Semiconductor device |
| CN105164885A (en) * | 2013-04-19 | 2015-12-16 | 京瓷株式会社 | Power control system, power control device, and method for controlling power control system |
| JP2015228728A (en) * | 2014-05-30 | 2015-12-17 | 住友電気工業株式会社 | Converter |
| CN105553093A (en) * | 2016-02-24 | 2016-05-04 | 台州谊聚机电有限公司 | Power supply circuit with real-time voltage detection for water pump system |
-
2016
- 2016-01-22 CN CN201610045963.2A patent/CN106533163A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1453881A (en) * | 2002-04-26 | 2003-11-05 | 株式会社东芝 | Insulated-gate semiconductor apparatus |
| CN1536680A (en) * | 2003-04-07 | 2004-10-13 | 株式会社东芝 | Insulating grid type semiconductor device |
| CN1893111A (en) * | 2005-05-12 | 2007-01-10 | 谢福渊 | Elimination of gate oxide weak spot in deep trench |
| CN101931005A (en) * | 2009-06-24 | 2010-12-29 | 瑞萨电子株式会社 | Semiconductor device, method of manufacturing the same and power-supply device using the same |
| CN102916614A (en) * | 2011-08-03 | 2013-02-06 | 台达电子企业管理（上海）有限公司 | Photovoltaic system and photovoltaic module with voltage balancers |
| CN102290985A (en) * | 2011-08-12 | 2011-12-21 | 南京航空航天大学 | Coupling inductor based voltage boosting and reducing direct current (DC) converter |
| CN102355131B (en) * | 2011-10-14 | 2014-01-29 | 矽力杰半导体技术(杭州)有限公司 | Hybrid control method and device of four-switch Buck-Boost converter |
| CN103839982A (en) * | 2012-11-23 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Planar gate super-junction product gate layout structure |
| CN105164885A (en) * | 2013-04-19 | 2015-12-16 | 京瓷株式会社 | Power control system, power control device, and method for controlling power control system |
| CN104465718A (en) * | 2013-09-20 | 2015-03-25 | 三垦电气株式会社 | Semiconductor device |
| CN103560666A (en) * | 2013-11-14 | 2014-02-05 | 南京集能易新能源技术有限公司 | Four-switch voltage boosting and reducing converter with low ripples and control method thereof |
| JP2015228728A (en) * | 2014-05-30 | 2015-12-17 | 住友電気工業株式会社 | Converter |
| CN105553093A (en) * | 2016-02-24 | 2016-05-04 | 台州谊聚机电有限公司 | Power supply circuit with real-time voltage detection for water pump system |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108233405A (en) * | 2017-11-24 | 2018-06-29 | 苏州桑普泰克光能科技有限公司 | Electric current autotracking photovoltaic module |
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