CN106527041B - 掩膜版及其曝光方法、以及液晶显示面板 - Google Patents

掩膜版及其曝光方法、以及液晶显示面板 Download PDF

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CN106527041B
CN106527041B CN201610885326.6A CN201610885326A CN106527041B CN 106527041 B CN106527041 B CN 106527041B CN 201610885326 A CN201610885326 A CN 201610885326A CN 106527041 B CN106527041 B CN 106527041B
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liquid crystal
crystal display
display panel
exposure
mask plate
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CN106527041A (zh
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周刘飞
王杰
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Nanjing CEC Panda LCD Technology Co Ltd
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Nanjing CEC Panda LCD Technology Co Ltd
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Priority to PCT/CN2017/072471 priority patent/WO2018068441A1/zh
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    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
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    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02—OPTICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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Abstract

本发明提供一种掩膜版及其曝光方法、以及液晶显示面板，掩膜版上设有图形区和位于图形区外的遮光带，图形区内设有3个曝光区域，分别为第一曝光区域、第二曝光区域、和第三曝光区域；遮光带内设有狭缝区域；所述图形区内设有纵横交错的曝光源极线和曝光栅极线，曝光源极线的中间呈断开状，曝光栅极线为一条连续的线条。采用本发明的方法，形成拼接液晶显示面板，且在拼接液晶显示面板的源极线和栅极线的中间均呈断开状；本发明能解决画面失真，闪烁，运动画面模糊等问题，同时能降低制造难度和生产成本。

Description

掩膜版及其曝光方法、以及液晶显示面板
技术领域
本发明属于大尺寸、高解析液晶显示技术，尤其涉及一种掩膜版及其曝光方法、以及液晶显示面板。
技术背景
大尺寸、高解析度显示器能给观看者带来超级真实的感觉和强大的视觉体验，日本广播协会研究发现8K*4K(7680×4320)显示面板是适合人们观看的解析度。
对于大尺寸的显示面板，其利用现有技术制造时，需分区域拼接曝光而成，如图1所示为掩膜版的结构示意图，200为掩膜版，通过将掩膜版200分成三个区域，分别为区域A、区域B和区域C。
图2为大尺寸显示面板的结构示意图，显示面板通过掩膜版200分区曝光形成，图1中的曝光区域A对应图2中的面板区域A，图1中的曝光区域B对应图2中的面板区域B，图1中的曝光区域C对应图2中的面板区域C。图2中的1是源极驱动芯片，2为栅极驱动芯片。
高解析的大尺寸显示面板则更加复杂，当像素变小时会出现线密度加大，宽度变细，负载加大，充电时间变短等等一系列问题。
为了解决负载大、充电时间变短等问题，可将显示面板分成四个区域。充电时间＝1/(信号频率*栅极线数目)，当面板被分成四个独立区域时，每个区域的栅极线数目减少一半，充电时间时间至少提高一倍。采用如图3所示的源极驱动器11和栅极驱动器21和图4所示的4个4K*2K的液晶面板中心驱动板(TCON)来驱动8K*4K显示面板的驱动方式。若显示面板分成独立的四个区域驱动，需要源极线和栅极线的中间均断开。
如图5所示，显示面板的X轴方向上4为源极线方向，Y轴方向上3为栅极线方向，曝光区域A、曝光区域B和曝光区域C拼接方向为栅极线方向，所以源极线方向不受影响，可以在掩膜版200上直接绘制中间断开的源极线，而采用同一掩膜版拼接曝光无法得到中间断开的栅极线。
发明内容
本发明的目的在于提供一种掩膜版及其曝光方法、以及液晶显示面板，用于大尺寸高解析度液晶面板面板和拼接曝光的掩膜版。
本发明提供一种掩膜版，掩膜版上设有图形区和位于图形区外的遮光带，图形区内设有3个曝光区域，分别为第一曝光区域、第二曝光区域、和第三曝光区域；遮光带内设有狭缝区域；所述图形区内设有纵横交错的曝光源极线和曝光栅极线，曝光源极线的中间呈断开状，曝光栅极线为一条连续的线条。
优选地，所述曝光源极线与X方向平行，曝光栅极线与Y方向平行。
优选地，所述狭缝区域由曝光栅极线的金属层形成或曝光源极线的金属层形成。
优选地，所述狭缝区域内设有一条狭缝，该狭缝的长度等于曝光源极线的宽度。
优选地，所述狭缝的宽度大于3um。
本发明还提供液晶显示面板的曝光方法，包括如下步骤：
第一步：掩膜版的第一曝光区域、第二曝光区域、以及第三曝光区域依序对液晶显示面板进行曝光，在液晶显示面板上形成第一面板区域、第二面板区域和第三面板区域，制成拼接状的液晶显示面板，拼接状的液晶显示面板的源极线的中间呈断开状，拼接状的液晶显示面板的栅极线为一条连续的线条；
第二步：掩膜版的狭缝区域对液晶显示面板的栅极线的中间进行曝光，拼接状的液晶显示面板的栅极线的中间曝光呈断开状。
优选地，所述栅极线的狭缝区域的宽度大于6mm。
优选地，所述第一步包括如下步骤：
A1：掩膜版的第一曝光区域对液晶显示面板的下部分进行曝光，在液晶显示面板形成第一面板区域，在该第一面板区域内形成呈断开状的源极线和呈连续状的栅极线；
A2：掩膜版的第二曝光区域对液晶显示面板的中间部分进行曝光，在液晶显示面板形成第二面板区域，在该第二面板区域内形成呈断开状的源极线和呈连续状的栅极线；
A3：掩膜版的第三曝光区域对液晶显示面板的上部分进行曝光，在液晶显示面板形成第三面板区域，在该第三面板区域内形成呈断开状的源极线和呈连续状的栅极线。
优选地，掩膜版的曝光栅极线在液晶显示面板上曝光形成呈连续状的栅极线，掩膜版的曝光源极线在液晶显示面板上曝光形成呈断开状的源极线。
本发明还提供一种拼接液晶显示面板，所述拼接液晶显示面板包括纵横交错的栅极线和源极线，所述栅极线和源极线的中间均呈断开状。
本发明还提供一种拼接液晶显示面板，包括纵横交错的栅极线和源极线，所述栅极线和源极线的中间均呈断开状。
采用本发明的方法，形成拼接液晶显示面板，且在拼接液晶显示面板的源极线和栅极线的中间均呈断开状；拼接液晶显示面板分成四个独立区域，栅极线和源极线负载至少减少一半，信号不易失真；每个区域栅极线数目减少一半，充电时间至少提高一倍；同时可将8K*4K液晶显示面板的中心驱动板转换成4个独立的4K*2K中心驱动板驱动，降低面板制造的难度和减小生产成本。本发明能解决画面失真，闪烁，运动画面模糊等问题，同时能降低制造难度和生产成本。
附图说明
图1为现有掩膜版的结构示意图；
图2为由图1所示掩膜版曝光形成的液晶显示面板的结构示意图；
图3为图2所示液晶显示面板带源极驱动器和栅极驱动器的结构示意图；
图4为图2所示液晶显示面板的驱动电路的结构示意图；
图5为图1所示掩膜版上的栅极和源极的结构示意图；
图6为本发明掩膜版的结构示意图；
图7为采用图1所示掩膜版对液晶显示面板的曝光步骤之一的示意图；
图8为采用图1所示掩膜版对液晶显示面板的曝光步骤之二的示意图；
图9为图1所示掩膜版对液晶显示面板的曝光后的结构示意图。
具体实施方式
本发明揭示一种掩膜版以及由该掩膜版曝光形成的液晶显示面板，如图6所示，掩膜版200上设有图形区5和位于图形区5外的遮光带6，其中，图形区5内设有3个曝光区域，分别为：第一曝光区域A、第二曝光区域B、以及第三曝光区域C；遮光带6内设有狭缝区域7，该狭缝区域7由任意一图层制成，狭缝区域7设有一条狭缝8。
所述图形区5内设有纵横交错的曝光源极线51和曝光栅极线52，曝光源极线51与X方向平行，曝光栅极线52与Y方向平行，曝光源极线51的中间呈断开状，曝光栅极线52为一条连续的线条。
狭缝区域7由曝光栅极线52的金属层形成或曝光源极线51的金属层形成。
曝光源极线51和曝光栅极线52均位于第一曝光区域A、第二曝光区域B、以及第三曝光区域C内。
狭缝8的长度L等于曝光源极线51的宽度，狭缝8的宽度≥3um。
采用本掩膜版200对液晶显示面板进行曝光，包括如下步骤：
第一步：如图7所示，掩膜版的第一曝光区域A、第二曝光区域B、和第三曝光区域C依序对液晶显示面板进行曝光，依序在液晶显示面板上形成第一面板区域A、第二面板区域B和第三面板区域C，该第一面板区域A、第二面板区域B和第三面板区域C形成拼接状的液晶显示面板；同时掩膜版的曝光栅极线52在液晶显示面板上曝光形成呈连续状的栅极线62，掩膜版的曝光源极线51在液晶显示面板上曝光形成呈断开状的源极线61；
第二步：如图8和图9所示，掩膜版的狭缝区域7对拼接状的液晶显示面板的栅极线的中间进行曝光(掩膜版的其他部分采用挡板遮住)，拼接状的液晶显示面板的栅极线62的中间曝光呈断开状。
栅极线的中间曝光区域(即狭缝区域)的宽度大于6mm
其中，该第一步包括如下步骤：
A1：掩膜版的第一曝光区域A对液晶显示面板的下部分进行曝光，在液晶显示面板形成第一面板区域A，在该第一面板区域A内形成呈断开状的源极线61和呈连续状的栅极线62；
A2：掩膜版的第二曝光区域B对液晶显示面板的中间部分进行曝光，在液晶显示面板形成第二面板区域B，在该第二面板区域B内形成呈断开状的源极线61和呈连续状的栅极线62；
A3：掩膜版的第三曝光区域C对液晶显示面板的上部分进行曝光，在液晶显示面板形成第三面板区域C，在该第三面板区域C内形成呈断开状的源极线61和呈连续状的栅极线62。
其中，如图7所示，第一面板区域A的栅极线62、第二面板区域B的栅极线62和第三面板区域C的栅极线62拼接成连续的线条。
本发明还提供一种拼接液晶显示面板，其包括纵横交错的栅极线62和源极线61，该栅极线62和源极线61的中间均呈断开状。
采用本发明的方法，形成拼接液晶显示面板，且在拼接液晶显示面板的源极线和栅极线的中间均呈断开状；拼接液晶显示面板分成四个独立区域，栅极线和源极线负载至少减少一半，信号不易失真；每个区域栅极线数目减少一半，充电时间至少提高一倍；同时可将8K*4K液晶显示面板的中心驱动板转换成4个独立的4K*2K中心驱动板驱动，降低面板制造的难度和减小生产成本；本发明能解决画面失真，闪烁，运动画面模糊等问题，同时能降低制造难度和生产成本。
以上详细描述了本发明的优选实施方式，但是本发明并不限于上述实施方式中的具体细节，在本发明的技术构思范围内，可以对本发明的技术方案进行多种等同变换，这些等同变换均属于本发明的保护范围。

Claims (9)

1.一种掩膜版，掩膜版上设有图形区和位于图形区外的遮光带，其特征在于，图形区内设有3个曝光区域，分别为第一曝光区域、第二曝光区域、和第三曝光区域；遮光带内设有狭缝区域；所述图形区内设有纵横交错的曝光源极线和曝光栅极线，曝光源极线的中间呈断开状，曝光栅极线为一条连续的线条，利用掩膜板的狭缝区域对拼接液晶显示面板的栅极线的中间进行曝光，使拼接液晶显示面板的栅极线的中间曝光呈断开状，通过断开和连续的源极线和栅极线将拼接液晶显示面板分成四个独立区域。
2.根据权利要求1所述的掩膜版，其特征在于：所述曝光源极线与X方向平行，曝光栅极线与Y方向平行。
3.根据权利要求1所述的掩膜版，其特征在于：所述狭缝区域由曝光栅极线的金属层形成或曝光源极线的金属层形成。
4.根据权利要求1所述的掩膜版，其特征在于：所述狭缝区域内设有一条狭缝，该狭缝的长度等于曝光源极线的宽度。
5.根据权利要求4所述的掩膜版，其特征在于：所述狭缝的宽度大于3um。
6.采用权利要求1-5任一所述掩膜版对液晶显示面板的曝光方法，其特征在于，包括如下步骤：
第一步：掩膜版的第一曝光区域、第二曝光区域、以及第三曝光区域依序对液晶显示面板进行曝光，在液晶显示面板上形成第一面板区域、第二面板区域和第三面板区域，制成拼接液晶显示面板，拼接液晶显示面板的源极线的中间呈断开状，拼接液晶显示面板的栅极线为一条连续的线条；
第二步：利用掩膜版的狭缝区域对拼接液晶显示面板的栅极线的中间进行曝光，使拼接液晶显示面板的栅极线的中间曝光呈断开状，通过断开和连续的源极线和栅极线将拼接液晶显示面板分成四个独立区域。
7.根据权利要求6所述的曝光方法，其特征在于：所述栅极线的狭缝区域的宽度大于6mm。
8.根据权利要求6所述的曝光方法，其特征在于：所述第一步包括如下步骤：
A1：掩膜版的第一曝光区域对液晶显示面板的下部分进行曝光，在液晶显示面板形成第一面板区域，在该第一面板区域内形成呈断开状的源极线和呈连续状的栅极线；
A2：掩膜版的第二曝光区域对液晶显示面板的中间部分进行曝光，在液晶显示面板形成第二面板区域，在该第二面板区域内形成呈断开状的源极线和呈连续状的栅极线；
A3：掩膜版的第三曝光区域对液晶显示面板的上部分进行曝光，在液晶显示面板形成第三面板区域，在该第三面板区域内形成呈断开状的源极线和呈连续状的栅极线。
9.一种由权利要求6所述曝光方法形成的拼接液晶显示面板，其特征在于，利用掩膜版的狭缝区域对拼接液晶显示面板的栅极线的中间进行曝光，使拼接液晶显示面板的栅极线的中间曝光呈断开状，通过断开和连续的源极线和栅极线将拼接液晶显示面板分成四个独立区域。
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