CN106513284A - 一种利用铜纳米颗粒增强薄膜光子吸收的方法 - Google Patents
一种利用铜纳米颗粒增强薄膜光子吸收的方法 Download PDFInfo
- Publication number
- CN106513284A CN106513284A CN201610894304.6A CN201610894304A CN106513284A CN 106513284 A CN106513284 A CN 106513284A CN 201610894304 A CN201610894304 A CN 201610894304A CN 106513284 A CN106513284 A CN 106513284A
- Authority
- CN
- China
- Prior art keywords
- nano particles
- copper nano
- film
- copper
- photonic absorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 76
- 239000010949 copper Substances 0.000 title claims abstract description 76
- 239000002105 nanoparticle Substances 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 38
- 230000003014 reinforcing effect Effects 0.000 title abstract 2
- 229910052709 silver Inorganic materials 0.000 claims abstract description 18
- 239000004332 silver Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 238000005253 cladding Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000006185 dispersion Substances 0.000 claims description 3
- 229920000128 polypyrrole Polymers 0.000 claims description 3
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 2
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 claims description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 2
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- RCEAADKTGXTDOA-UHFFFAOYSA-N OS(O)(=O)=O.CCCCCCCCCCCC[Na] Chemical compound OS(O)(=O)=O.CCCCCCCCCCCC[Na] RCEAADKTGXTDOA-UHFFFAOYSA-N 0.000 claims description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000005642 Oleic acid Substances 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- 229920002125 Sokalan® Polymers 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229960004643 cupric oxide Drugs 0.000 claims description 2
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 2
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 claims description 2
- 239000004584 polyacrylic acid Substances 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical compound [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 claims 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052737 gold Inorganic materials 0.000 abstract description 16
- 239000010931 gold Substances 0.000 abstract description 16
- 229910000510 noble metal Inorganic materials 0.000 abstract description 8
- 239000004094 surface-active agent Substances 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 41
- 239000002082 metal nanoparticle Substances 0.000 description 11
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 6
- 230000004941 influx Effects 0.000 description 6
- 230000005945 translocation Effects 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 235000013339 cereals Nutrition 0.000 description 3
- 238000007606 doctor blade method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001802 infusion Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007146 photocatalysis Methods 0.000 description 3
- 230000001699 photocatalysis Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 241000549556 Nanos Species 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- -1 microelectronics Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229910003334 KNbO3 Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 125000005211 alkyl trimethyl ammonium group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/02—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to macromolecular substances, e.g. rubber
- B05D7/04—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to macromolecular substances, e.g. rubber to surfaces of films or sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/06—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain multicolour or other optical effects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2203/00—Other substrates
- B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
- B05D2203/35—Glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2601/00—Inorganic fillers
- B05D2601/20—Inorganic fillers used for non-pigmentation effect
- B05D2601/28—Metals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Powder Metallurgy (AREA)
- Luminescent Compositions (AREA)
Abstract
本发明涉及一种利用铜纳米颗粒增强薄膜光子吸收的方法,属于光电材料领域。本发明是将高分子、无机物或表面活性剂等不同类型材料包覆的铜纳米颗粒和功能薄膜相结合,利用铜纳米颗粒的表面等离子激元共振性质提高薄膜的光子吸收强度。同时,利用此种方法,可以克服金或银等贵金属成本昂贵的缺点。
Description
技术领域
本发明涉及一种增强薄膜光子吸收的方法,具体涉及金属纳米颗粒共振增强薄膜光子吸收的方法。
背景技术
由于金属纳米颗粒尺度在纳米范围,因此具有突出的光学、电学和催化性能。近年来,其在薄膜太阳电池、光催化材料、发光材料、微电子、医药学以及生物学等领域的应用引起了广泛关注。上述这些潜在领域的应用都是基于金属纳米颗粒集体自由电子共振的金属局域表面等离子激元机制,因为利用这种特殊的性能可以在纳米尺度上对光进行操纵,并且决定了金属纳米颗粒的近场和远场特征。在光场的作用下,金属纳米颗粒中的自由电子由于受到核的库伦吸引力会引起电子的集体振荡,即形成金属局域表面等离子激元共振,进而引起强烈的光学吸收和散射。
贵金属银、金纳米颗粒是研究的最多的具有表面等离子激元共振的金属纳米颗粒。利用金或银纳米颗粒的表面等离子激元共振可以增强太阳能吸收的特点,在单晶硅PN或非晶硅P-I-N表面沉积金或银的纳米颗粒提高太阳能电池的短路电流和光电转换效率;利用金或银纳米颗粒的表面等离子激元共振增强光催化的性能,在TiO2,ZrO2,ZnO,SnO2,CeO2,Fe2O3,KNbO3等常见的具有催化性能的半导体纳米材料中引入金或银纳米颗粒提高紫外和可见光波段的光催化性能;利用金或银纳米颗粒的表面等离子激元共振增强提高激发光的吸收效率或荧光发射的强度,在稀土掺杂ZnO:Re、YVO4:Re、NaYF4:Re等常见的发光纳米材料中引入金或银纳米颗粒提高上转换和下转换的发光强度。另外,在这些应用中,光电转换效率、光催化以及发光性能的提高程度都和金、银等金属纳米颗粒的成分、尺寸、形状以及颗粒所处的介电环境等有密切关系。
考虑到金、银等贵金属纳米颗粒制作的成本因素,限制了金、银等贵金属纳米在表面等离子激元共振应用中的发展。因此,急需寻找金、银等贵金属纳米颗粒的替代品。由于铜纳米材料具有良好的延展性、优异的导热导电性,优异的表面等离子激元特性,而且抗电迁移能力强等性能。因此,为了降低金、银等贵金属纳米颗粒的成本以及相应器件的成本,提出采用资源更丰富、成本更廉价且高导电性的铜纳米颗粒代替金、银等贵金属纳米颗粒。
发明内容
鉴于前面所述背景技术,本发明的目的在于提供一种利用铜纳米颗粒的表面等离子激元共振增强薄膜光子吸收的方法,其克服了金或银等贵金属成本昂贵的缺点。该方法适用于不同类型材料包覆的铜纳米颗粒:高分子包覆的铜纳米颗粒包括不同分子量的聚吡咯烷酮、聚乙烯醇、聚乙二醇、聚丙烯酸钠、聚丙烯酸等;无机物包覆的铜纳米颗粒包括二氧化硅、碳、二氧化锡、氧化铜、银等;表面活性剂包覆的铜纳米颗粒包括十二烷基硫酸钠、十六烷基三甲基溴化铵、油酸、油胺、辛基酚聚氧乙烯醚等。
本发明所采用的方法是将具有表面等离子激元共振性质的铜纳米颗粒和功能性薄膜相结合,提高薄膜的光子吸收强度。本发明解决其技术问题所采用的技术方案是:一种利用铜纳米颗粒的表面等离子激元共振增强薄膜光子吸收的方法。具体包括:
(1)、选择不同尺寸的球形铜纳米颗粒,铜纳米颗粒的直径为10nm-1um,优选10nm-700nm;铜纳米颗粒可以为不同类型材料包覆的铜纳米颗粒。
(2)、将步骤(1)中选择好尺寸的球形铜纳米颗粒用不同的方法涂覆在具有不同功能特性的薄膜表面或分散在薄膜内部。涂覆的方法包括旋涂法、刮刀法或浸渍法。不同功能的薄膜包括染料敏化太阳能电池或钙钛矿太阳能电池中的吸收层、半导体光催化薄膜、稀土纳米颗粒、稀土配合物纳米颗粒或染料杂化发光薄膜。
本发明提供的方法中,利用铜纳米颗粒的表面等离子激元共振增强提高薄膜的光子吸收,通过调节铜纳米颗粒的尺寸控制近场和远场,即控制吸收和散射占比,通过这种方式提高薄膜的光子吸收。
本发明提供的方法中,利用铜纳米颗粒的吸收增强提高薄膜的光子吸收,铜纳米颗粒的直径优选10nm-160nm。光子主要局限在铜纳米颗粒的表面,即铜纳米颗粒和介质环境的界面。
本发明提供的方法中,利用铜纳米颗粒的散射增强提高薄膜的光子吸收,铜纳米颗粒的直径优选160nm-700nm。铜纳米颗粒尺寸越大,远场成分占比越大,光子受到铜纳米颗粒的散射越强,增长了光子在薄膜中的运动长度,即提高了薄膜的光子吸收。
本发明的利用铜纳米颗粒的表面等离子激元共振增强薄膜光子吸收的方法,只需将金或银等贵金属纳米颗粒用铜纳米颗粒替代,无需其他的步骤,与现有的太阳能工艺、光催化薄膜工艺以及发光薄膜工艺等有着良好的兼容性,克服了背景技术所存在的不足,具有如下效果:成本低、易实现。
附图说明
图1为聚吡咯烷酮包覆的不同尺寸的铜纳米颗粒的扫描电镜照片。
图2利用铜纳米颗粒的表面等离子激元共振增强提高薄膜的光子吸收的原型器件结构。(a)、吸收增强型;(b)散射增强型。
图3是利用不同直径的铜纳米颗粒的吸收增强提高薄膜的光子吸收方案中铜纳米颗粒的散射、吸收、消光光谱。(a)、10nm;(b)、20nm;(c)、40nm;(d)、80nm。
图4是利用不同直径的铜纳米颗粒的散射增强提高薄膜的光子吸收方案中铜纳米颗粒的散射、吸收、消光光谱。(a)、120nm;(b)、160nm;(c)、320nm;(d)、640nm。
具体实施方式
下面结合附图和实施例对本发明作进一步说明。
图1为合成的聚吡咯烷酮包覆的不同尺寸的铜纳米颗粒的扫描电镜照片。对于不同的尺寸有不同的处理方法。
实施例1:利用铜纳米颗粒的吸收增强提高薄膜的光子吸收的方法,包括:
步骤1,选择涂覆功能性薄膜的基板;本实施例中,该基板可以为ITO玻璃、FTO玻璃、载波片。
步骤2,将铜纳米颗粒和组成薄膜的材料均匀混合;本实施例中,铜纳米颗粒的尺寸位于10nm-80nm。
步骤3,将步骤2得到的材料涂覆在基板表面。
其原型器件的结构如图2(a)所示。本实施例之中,该步骤2中混合的方法例如由高分子有机溶液和铜纳米颗粒超声混合方法,或者硅烷偶联剂和铜纳米颗粒水解混合方法,但并不以此为限,根据需要可采用其他方法。
步骤3中的涂覆的方法例如由旋涂法,浸渍法或者刮刀法,但并不以此为限,根据需要可采用其他方法。
实施例1中的利用铜纳米颗粒的吸收增强提高薄膜的光子吸收的方法中,直径分别为10nm、20nm、40nm、80nm的铜纳米颗粒的吸收、散射、消光光谱图如图3所示。从图3中的光谱图结果可以看出铜纳米颗粒的散射相比吸收来讲要弱很多,主要是铜纳米颗粒的共振吸收。所以为了利用铜纳米颗粒的吸收增强提高薄膜中光子的吸收,采用实例1中的原型器件结构。
实施例2:利用铜纳米颗粒的散射增强提高薄膜的光子吸收的方法,包括:
步骤1,选择涂覆功能性薄膜的基板;本实施例中,该基板可以为ITO玻璃、FTO玻璃、载波片。
步骤2,将铜纳米颗粒涂覆在功能薄膜的表面或者功能性薄膜和基板的界面之中。
其原型器件的结构如图2(b)所示。本实施例之中,该步骤2中涂覆的方法例如由旋涂法,浸渍法或者刮刀法,但并不以此为限,根据需要可采用其他方法。涂覆溶液的配置例如由铜纳米颗粒的乙醇等有机溶剂分散液产生。
步骤2中铜纳米颗粒层的位置处于涂覆在功能性薄膜和基板的界面,然后在铜纳米颗粒薄膜表面通过不同的方法形成薄膜;铜纳米颗粒层的位置处于薄膜的表面,则在基板表面先通过不同的方法形成薄膜,然后在薄膜的表面涂覆铜纳米颗粒。
实施例2中,对光源的照射方向有一定的要求,见图2(b)所示。
实施例2中的利用铜纳米颗粒的散射增强提高薄膜的光子吸收的方法中,直径分别为120nm、160nm、320nm、640nm的铜纳米颗粒的吸收、散射、消光光谱图如图4所示。从图4中的光谱图结果可以看出铜纳米颗粒的直径增加到120nm,散射的贡献和吸收的贡献可以相比拟,铜纳米颗粒直径在160nm以后,散射相比吸收来讲要强很多,主要是铜纳米颗粒的共振散射。所以为了利用铜纳米颗粒的散射增强来提高薄膜中光子的吸收,采用实例2中的原型器件结构。
以上所述,仅为本发明的实施例而已,依据本发明专利范围及说明书内容所做的等效变化与修饰,皆属本发明涵盖的范围内。
Claims (5)
1.一种利用铜纳米颗粒增强薄膜光子吸收的方法,其特征在于包括如下步骤:
步骤1,制备铜纳米颗粒的涂覆液;
步骤2,将步骤1制得的涂覆液涂在基板或薄膜表面,或薄膜和基板之间的界面。
2.根据权利要求1所述的一种利用铜纳米颗粒增强薄膜光子吸收的方法,其特征在于:所述步骤1中的涂覆液由铜纳米颗粒和组成薄膜的材料均匀混合,或者由铜纳米颗粒的乙醇分散液配置。
3.根据权利要求1所述的一种利用铜纳米颗粒增强薄膜光子吸收的方法,其特征在于:所述步骤1中的铜纳米颗粒为聚吡咯烷酮、聚乙烯醇、聚乙二醇、聚丙烯酸钠、聚丙烯酸,二氧化硅、碳、二氧化锡、氧化铜、银、十二烷基硫酸钠、十六烷基三甲基溴化铵、油酸、油胺、辛基酚聚氧乙烯醚等材料包覆的铜纳米颗粒的一种。
4.根据权利要求1所述的一种利用铜纳米颗粒增强薄膜光子吸收的方法,其特征在于:所述步骤2中铜纳米颗粒尺寸在10nm-160nm之间的,涂覆在基板表面;铜纳米颗粒尺寸在160nm-1um之间的,涂覆在薄膜表面或薄膜和基板之间的界面。
5.根据权利要求2所述的一种利用铜纳米颗粒增强薄膜光子吸收的方法,其特征在于:铜纳米颗粒和组成薄膜的材料均匀混合的涂覆液适用于直径在10nm-160nm之间的铜纳米颗粒,铜纳米颗粒的乙醇分散液适用于直径在160nm-1um之间的铜纳米颗粒。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610894304.6A CN106513284A (zh) | 2016-10-13 | 2016-10-13 | 一种利用铜纳米颗粒增强薄膜光子吸收的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610894304.6A CN106513284A (zh) | 2016-10-13 | 2016-10-13 | 一种利用铜纳米颗粒增强薄膜光子吸收的方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN106513284A true CN106513284A (zh) | 2017-03-22 |
Family
ID=58331720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610894304.6A Pending CN106513284A (zh) | 2016-10-13 | 2016-10-13 | 一种利用铜纳米颗粒增强薄膜光子吸收的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106513284A (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107203081A (zh) * | 2017-05-08 | 2017-09-26 | 东南大学 | 一种等离激元宽光谱调控的智能变色玻璃 |
WO2019169746A1 (zh) * | 2018-03-07 | 2019-09-12 | 东南大学 | 表面等离激元-半导体异质结谐振光电器件及其制备方法 |
CN110556478A (zh) * | 2019-08-30 | 2019-12-10 | 桂林医学院 | 一种基于等离激元效应的钙钛矿弱光探测器 |
CN110639533A (zh) * | 2019-10-22 | 2020-01-03 | 盐城工学院 | 一种铜/改性钒酸铋复合光催化材料、制备方法及应用 |
CN113589411A (zh) * | 2021-05-14 | 2021-11-02 | 武汉工程大学 | 基于贵金属纳米颗粒-j聚体染料等离子体微腔及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090142481A1 (en) * | 2007-11-30 | 2009-06-04 | Xerox Corporation | Air stable copper nanoparticle ink and applications therefor |
CN101801674A (zh) * | 2007-05-18 | 2010-08-11 | 应用纳米技术控股股份有限公司 | 金属油墨 |
CN102686777A (zh) * | 2009-03-24 | 2012-09-19 | 耶路撒冷希伯来大学伊森姆研究发展公司 | 低温烧结纳米颗粒的方法 |
CN104347739A (zh) * | 2013-08-02 | 2015-02-11 | 台积太阳能股份有限公司 | 薄膜光伏器件及其制造方法 |
-
2016
- 2016-10-13 CN CN201610894304.6A patent/CN106513284A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101801674A (zh) * | 2007-05-18 | 2010-08-11 | 应用纳米技术控股股份有限公司 | 金属油墨 |
US20090142481A1 (en) * | 2007-11-30 | 2009-06-04 | Xerox Corporation | Air stable copper nanoparticle ink and applications therefor |
CN102686777A (zh) * | 2009-03-24 | 2012-09-19 | 耶路撒冷希伯来大学伊森姆研究发展公司 | 低温烧结纳米颗粒的方法 |
CN104347739A (zh) * | 2013-08-02 | 2015-02-11 | 台积太阳能股份有限公司 | 薄膜光伏器件及其制造方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107203081A (zh) * | 2017-05-08 | 2017-09-26 | 东南大学 | 一种等离激元宽光谱调控的智能变色玻璃 |
WO2019169746A1 (zh) * | 2018-03-07 | 2019-09-12 | 东南大学 | 表面等离激元-半导体异质结谐振光电器件及其制备方法 |
US10964830B2 (en) | 2018-03-07 | 2021-03-30 | Southeast University | Surface plasmon-semiconductor heterojunction resonant optoelectronic device and preparation method therefor |
CN110556478A (zh) * | 2019-08-30 | 2019-12-10 | 桂林医学院 | 一种基于等离激元效应的钙钛矿弱光探测器 |
CN110556478B (zh) * | 2019-08-30 | 2023-04-07 | 桂林医学院 | 一种基于等离激元效应的钙钛矿弱光探测器 |
CN110639533A (zh) * | 2019-10-22 | 2020-01-03 | 盐城工学院 | 一种铜/改性钒酸铋复合光催化材料、制备方法及应用 |
CN110639533B (zh) * | 2019-10-22 | 2022-05-17 | 盐城工学院 | 一种铜/改性钒酸铋复合光催化材料、制备方法及应用 |
CN113589411A (zh) * | 2021-05-14 | 2021-11-02 | 武汉工程大学 | 基于贵金属纳米颗粒-j聚体染料等离子体微腔及其制备方法 |
CN113589411B (zh) * | 2021-05-14 | 2023-07-21 | 武汉工程大学 | 基于贵金属纳米颗粒-j聚体染料等离子体微腔及其制备方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106513284A (zh) | 一种利用铜纳米颗粒增强薄膜光子吸收的方法 | |
You et al. | Eco‐friendly colloidal quantum dot‐based luminescent solar concentrators | |
Chen et al. | Photon management to reduce energy loss in perovskite solar cells | |
Siavash Moakhar et al. | Recent advances in plasmonic perovskite solar cells | |
Ding et al. | A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared | |
Bi et al. | Dye sensitization and local surface plasmon resonance-enhanced upconversion luminescence for efficient perovskite solar cells | |
Reilly et al. | Surface-plasmon enhanced transparent electrodes in organic photovoltaics | |
TWI635636B (zh) | 具光提取層之有機發光二極體 | |
CN104966781B (zh) | 一种钙钛矿纳米纤维膜太阳能电池及其制备方法 | |
CN106025067A (zh) | 一种溶液法生成钙钛矿薄膜的成膜方法及其器件应用 | |
Li et al. | Influence of Ag nanoparticles with different sizes and concentrations embedded in a TiO 2 compact layer on the conversion efficiency of perovskite solar cells | |
Liu et al. | Unique gold nanorods embedded active layer enabling strong plasmonic effect to improve the performance of polymer photovoltaic devices | |
Perrakis et al. | Efficient and environmental-friendly perovskite solar cells via embedding plasmonic nanoparticles: an optical simulation study on realistic device architectures | |
Cao et al. | Achieving high-efficiency large-area luminescent solar concentrators | |
Lv et al. | Self-assembled TiO2 nanorods as electron extraction layer for high-performance inverted polymer solar cells | |
Hosseini et al. | Concrete embedded dye-synthesized photovoltaic solar cell | |
Fang et al. | Application of bidirectional (up and down)-conversion luminescence material (GdBO3: Yb3+/Tb3+) in CdSe0. 4S0. 6 quantum dot-sensitized solar cells | |
Pandikumar et al. | TiO2-Au nanocomposite materials modified photoanode with dual sensitizer for solid-state dye-sensitized solar cell | |
Xu et al. | The role of Ag nanoparticles in inverted polymer solar cells: Surface plasmon resonance and backscattering centers | |
Li et al. | Plasmonic perovskite solar cells: An overview from metal particle structure to device design | |
Liu et al. | Performance improvement of inverted polymer solar cells by doping Au nanoparticles into TiO2 cathode buffer layer | |
Meng et al. | Balancing efficiency and transparency in organic transparent photovoltaics | |
CN102610685B (zh) | 用于太阳电池的等离子激元增强上转换器及其制备 | |
Wei et al. | Mn-doped multiple quantum well perovskites for efficient large-area luminescent solar concentrators | |
CN102544177B (zh) | 用于太阳电池的等离子体激元增强上转换器及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170322 |
|
WD01 | Invention patent application deemed withdrawn after publication |