CN106505004B - Detect the devices and methods therefor of iron content exception in wafer - Google Patents
Detect the devices and methods therefor of iron content exception in wafer Download PDFInfo
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- CN106505004B CN106505004B CN201510564059.8A CN201510564059A CN106505004B CN 106505004 B CN106505004 B CN 106505004B CN 201510564059 A CN201510564059 A CN 201510564059A CN 106505004 B CN106505004 B CN 106505004B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
Abstract
The present invention provides a kind of devices and methods therefor for detecting iron (Fe) content exception in wafer, including wafer carrying platform, injection cavity, illumination cavity, heat treatment cavity and minority carrier life time measure cavity, and wafer can be transmitted between each cavity.In the present invention, the first doped layer and the second doped layer are formed in benchmark wafer and crystal column surface to be measured, Doped ions and Fe ion form the first complex and the second complex under light illumination, making the minority carrier life time of wafer reduces, after being heat-treated to wafer, first complex and the second complex decompose, and the minority carrier life time of wafer reverts to initial value again.Therefore, by measuring the minority carrier life time of different moments wafer, the numerical value that the minority carrier life time of wafer to be measured and benchmark wafer declines is compared, to judge whether iron content is abnormal in wafer to be measured.In addition, iron content is higher, the first complex and the second complex of formation are more, and the minority carrier life time of wafer is smaller, and sxemiquantitative obtains the difference of iron content between different wafers.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to it is a kind of detection wafer in iron content exception device and
Its method.
Background technique
In the manufacturing process of semiconductor devices, due in the silicon material of use and crucible etc. containing different miscellaneous
Matter, so that inevitably there are some impurity in the device of preparation, for example, content is higher aerobic, carbon, nitrogen etc. contains
Measuring low has sodium (Na), iron (Fe) etc..The content of impurity will seriously affect device performance, especially metal impurities.Due to gold
The diffusion coefficient for belonging to impurity is bigger, is easy to cause deep energy level defect in the devices, be affected to device performance.Therefore, exist
In the manufacturing process of semiconductor devices, the various metal impurities in device must be controlled under a certain concentration.Due to containing for Fe
Measure it is relatively low, generally 1010~1011cm-3Magnitude, also, the content of the Fe of different device, different location in device is all
It is different.Currently, common instrument is only capable of the iron content of test device surface, also, the precision of instrument test is inadequate, thus
Cannot well in reaction member iron content, or even cannot detect whether containing Fe impurity.
Summary of the invention
The object of the present invention is to provide a kind of devices and methods therefors of iron content exception in detection wafer, detect wafer
Whether the content of middle Fe is normal.
In order to solve the above technical problems, the present invention also provides a kind of methods of iron content exception in detection wafer, comprising:
Benchmark wafer and wafer to be measured are provided, first is formed in the benchmark wafer and the crystal column surface to be measured respectively and mixes
Diamicton and the second doped layer measure the minority carrier life time of the benchmark wafer and the wafer to be measured, obtain the first benchmark and lack the sub- longevity
Life and the first minority carrier life time；
One During Illumination is carried out to the benchmark wafer and the wafer to be measured, first doped layer and described second is mixed
Doped ions in diamicton form the first complex and the second complex with iron ion respectively, measure the benchmark wafer and described
The minority carrier life time of wafer to be measured respectively obtains the second benchmark minority carrier life time and the second minority carrier life time；
One heat treatment process is carried out to the benchmark wafer and the wafer to be measured, make respectively first complex and
Second complex decomposes, and measures the minority carrier life time of the benchmark wafer and the wafer to be measured, respectively obtains third benchmark
Minority carrier life time and third minority carrier life time；
The difference of the second benchmark minority carrier life time and the first benchmark minority carrier life time the first difference of formation, described second
The difference of minority carrier life time and first minority carrier life time forms the second difference, if the third benchmark minority carrier life time and the first benchmark
Minority carrier life time is close, and the third minority carrier life time is close with first minority carrier life time, and second difference is greater than described
When the first difference, then the iron content in the wafer to be measured is abnormal.
Optionally, using ion implanting or chemical vapor deposition process in the benchmark wafer and the wafer table to be measured
Face is doped, and forms first doped layer and second doped layer.
Optionally, gallium doping or boron doping are carried out in the benchmark wafer and the crystal column surface to be measured.
Optionally, it carries out gallium doping or boron doped doping concentration is 1014cm-3~1017cm-3。
Optionally, before carrying out illumination, a fast speed heat is carried out to first doped layer and second doped layer and is moved back
Fiery process.
Optionally, the annealing temperature used in rapid thermal annealing process is 100 DEG C~300 DEG C.
Optionally, the time light application time for carrying out During Illumination is 10 minutes~120 minutes.
Optionally, the heat treatment temperature that progress heat treatment process uses is 50 DEG C~300 DEG C.
Optionally, the time for carrying out heat treatment process is 1 minute~120 minutes.
Correspondingly, the present invention also provides a kind of devices of iron content exception in detection wafer, comprising:
Wafer carrying platform, for placing wafer；
Cavity is injected, for forming doped structure in crystal column surface；
Illumination cavity, for carrying out lighting process to wafer；
It is heat-treated cavity, for being heat-treated to wafer；
Minority carrier life time measures cavity, the minority carrier life time for test wafer；
Wherein, the wafer can be transmitted between each cavity, the iron content exception in the detection wafer
Whether device tests to iron content in wafer using the method for iron content exception in above-mentioned detection wafer extremely.
Optionally, halogen lamp D is used in the illumination cavity2Lamp, xenon lamp or flash lamp carry out illumination.
Optionally, in minority carrier life time measurement cavity, measure the minority carrier life time of wafer accuracy be 0.1 microsecond~
1.0 musec order.
Optionally, the device for detecting iron content exception in wafer further includes one for transmitting the manipulator of wafer.
In detection wafer of the invention in the device of iron content exception and method, in benchmark wafer and crystal column surface to be measured
The first doped layer and the second doped layer are formed, Doped ions and Fe ion form the first complex and second under conditions of illumination
Complex, so that the minority carrier life time of wafer reduces, after carrying out heat treatment process to wafer, the first complex and second is answered
Zoarium can decompose, and the minority carrier life time of wafer can restore initial value again.Therefore, pass through few sub- longevity of the wafer of measurement different moments
Life, and the numerical value that the minority carrier life time of wafer to be measured and benchmark problem wafer declines is compared, so as to judge crystalline substance to be measured
Whether the content of the Fe in circle is abnormal.Also, in the present invention, the content of Fe is higher, the first complex of formation and second compound
Body is more, and the minority carrier life time of wafer is smaller, therefore, the difference of the iron content between different wafers can be obtained with sxemiquantitative.
Detailed description of the invention
Fig. 1 is the schematic diagram that the device of iron content exception in wafer is detected in one embodiment of the invention；
Fig. 2 is the flow chart that the method for iron content exception in wafer is detected in one embodiment of the invention；
Fig. 3 a is the structural schematic diagram of wafer to be measured in one embodiment of the invention；
Fig. 3 b is the structural schematic diagram that the second doped layer is formed in one embodiment of the invention；
Fig. 3 c is the structural schematic diagram that During Illumination wafer to be measured is carried out in one embodiment of the invention；
Fig. 3 d is the structural schematic diagram of wafer to be measured after being heat-treated in one embodiment of the invention；
Fig. 4 is the curve graph of the minority carrier life time of benchmark wafer in one embodiment of the invention；
Fig. 5 is the curve graph of the minority carrier life time of wafer to be measured in one embodiment of the invention.
Specific embodiment
It is carried out below in conjunction with device and method of the schematic diagram to iron content exception in detection wafer of the invention more detailed
Thin description, which show the preferred embodiment of the present invention, it should be appreciated that those skilled in the art can modify and be described herein
The present invention, and still realize advantageous effects of the invention.Therefore, following description should be understood as those skilled in the art
Member's is widely known, and is not intended as limitation of the present invention.
Core of the invention thought is that it is abnormal that benchmark wafer and wafer to be measured are put into iron content in detection wafer simultaneously
Device in, form the first doped layer and the second doped layer in benchmark wafer and crystal column surface to be measured, measurement obtains benchmark wafer
First minority carrier life time of the first benchmark minority carrier life time and wafer to be measured.Later, illumination is carried out to benchmark wafer and wafer to be measured,
Under illumination condition, Doped ions and Fe ion form the first complex and the second complex, the first complex and the second complex
Absorb more photo-generated carriers so that the minority carrier life time of wafer reduces, by benchmark wafer and wafer to be measured illumination cavity with
It is transmitted between minority carrier life time measurement cavity, continuous test minority carrier life time is stablized up to minority carrier life time, obtains the second of benchmark wafer
Second minority carrier life time of benchmark minority carrier life time and wafer to be measured.Then, benchmark wafer and wafer to be measured are heat-treated, first
Complex and the second complex decompose, and measurement obtains the few son of third of the third benchmark minority carrier life time and wafer to be measured of benchmark wafer
Service life.If third benchmark minority carrier life time is close with the first benchmark minority carrier life time, third minority carrier life time is close with the first minority carrier life time,
Then illustrate that the minority carrier life time of wafer restores, the decline of the minority carrier life time of wafer is as caused by the complex of Fe.Second benchmark is few
The difference of sub- service life and the first benchmark minority carrier life time is the first difference, and the difference of the second minority carrier life time and the first minority carrier life time is the
Two differences may determine that the content of the Fe in wafer to be measured is abnormal if the second difference is greater than the first difference.Also, second is poor
Value is bigger relative to the first difference, then wafer to be measured is higher relative to the iron content of benchmark wafer.
It is carried out specifically below in conjunction with device and method of Fig. 1-Fig. 5 to iron content exception in detection wafer of the invention
It is bright,
The device of iron content exception is refering to what is shown in Fig. 1, the device of iron content exception includes in detection wafer in detection wafer
Wafer carrying platform 10, injection cavity 20, illumination cavity 30, heat treatment cavity 40 and minority carrier life time measure cavity 50.Wherein, brilliant
Circle plummer 10 injects cavity 20 for placing wafer, for forming doped structure in crystal column surface, illumination cavity 30 for pair
Wafer carries out lighting process, and heat treatment cavity 40 is for being heat-treated wafer, and minority carrier life time measurement cavity 50 is for testing
The minority carrier life time of wafer.The present invention will be used for the functions such as ion implanting, heat treatment, measurement minority carrier life time, illumination in the prior art
Board simplified, be combined, thus formed detection wafer in iron content exception device so that formed detection fill
The volume set is smaller.Wherein, illumination, ion implanting, heat treatment, measure minority carrier life time device be those skilled in the art all may be used
With understanding, for example, using halogen lamp, D in illumination cavity 302Other lamps such as lamp, xenon lamp, flash lamp are irradiated wafer, few
It can be tested using existing based on the methods of photoconduction in sub- lifetime measurement cavity 50, this is public for those skilled in the art
Know, therefore not to repeat here.In addition, the detection device of iron content exception further includes a manipulator 60 in wafer, for transmitting crystalline substance
Circle.Also, wafer as needed can wafer carrying platform 10, injection cavity 20, illumination cavity 30, heat treatment cavity 40 and
It is transmitted between each cavitys such as minority carrier life time measurement cavity 50 by manipulator 60, carries out a series of testing procedure, from
And entire detection process is completed, realize the detection to iron content exception in wafer.
It should be noted that the general musec order of minority carrier life time for the wafer that minority carrier life time measurement cavity 50 detects, very
To lower, for example, the precision degree that minority carrier life time measurement cavity 50 detects is 0.1 microsecond~1.0 microseconds.Also, few son of wafer
The factors such as service life and the resistivity of wafer, the doping concentration of wafer, surface state are related, meanwhile, it can be to wafer to the environment of surrounding
The factors such as surface state have an impact, therefore, during wafer is transmitted between different cavitys, it is not necessary to by wafer
It is exposed in external environment, it is thus possible to guarantee going on smoothly for the measurement of wafer minority carrier life time.
The flow chart of the detection method of iron content exception below in conjunction with Fig. 3 a- refering to what is shown in Fig. 2, scheme in wafer of the invention
The detection method of iron content exception in wafer is specifically described in 3d, Fig. 4 and Fig. 5.In the present embodiment, only give to
The schematic diagram of structure in wafer is surveyed, the schematic diagram of each structure is similar with crystal circle structure to be measured in benchmark wafer, this is this field skill
Therefore art personnel are not it should be understood that, repeat them here.The detection method of iron content exception specifically comprises the following steps: in wafer
It executes step S1 and provides benchmark wafer (not shown) and wafer to be measured 1 with reference to shown in Fig. 3 a, by based Quasi-crystals
Round and wafer to be measured is placed in together in the wafer carrying platform 10 in detection wafer in the device of iron content exception.Then, by base
Quasi-crystalline substance is round and wafer 1 to be measured is transmitted to together in injection cavity 20, as shown in figure 1 A process.In injection cavity 20, respectively in base
Quasi-crystalline substance is round and 1 surface of wafer to be measured carries out ion doping process 3, forms the first doped layer (not shown) and the second doped layer
2, as shown in figure 3b.In the present invention, gallium doping carried out to the benchmark wafer and wafer to be measured 1, i.e. the first doped layer and
Second doped layer 2 is undoped algan layer, also, the concentration for carrying out gallium doping is 1014cm-3~1017cm-3.In the present embodiment,
Gallium doping can be carried out on the surface of benchmark wafer and wafer to be measured 1 using ion implanting.It should be noted that can also use
Chemical vapor deposition process deposits the second doped layer 2 of the first doped layer in benchmark wafer and wafer to be measured 1, realizes to based Quasi-crystals
Round and 1 surface of wafer to be measured doping, wherein controlling the doping concentration in the doped layer of crystal column surface is 1014cm-3~
1017cm-3?.Later, benchmark wafer and wafer to be measured 1 are transmitted to heat treatment cavity 40, as shown in figure 1 B process.In Re Chu
It manages in cavity 40, a heat treatment process is carried out to benchmark wafer and wafer to be measured 1, annealing temperature is 100 DEG C~300 DEG C, so that
Doped ions activation in first doped layer on the surface of benchmark wafer and wafer to be measured 1 and the second doped layer 2.At this point, by base
Quasi-crystalline substance is round and wafer 1 to be measured is transmitted to minority carrier life time measurement cavity 50, as shown in figure 1 C process.Cavity 50 is measured in minority carrier life time
In, the minority carrier life time of the benchmark wafer and the wafer to be measured 1 is measured for the first time, obtains the few son of the first benchmark of benchmark wafer
The first minority carrier life time Tw1 of service life Tbl1 and wafer to be measured 1, in general, the first benchmark minority carrier life time Tbl1 of benchmark wafer and
The value of first minority carrier life time Tw1 of wafer 1 to be measured is horizontal in the same order of magnitude.
Step S2 is executed benchmark wafer and wafer to be measured 1 to be transmitted in illumination cavity 30, with reference to shown in Fig. 3 c such as Fig. 1
Middle D process.In illumination cavity 30, a During Illumination 4 is carried out to the benchmark wafer and the wafer to be measured 2.In this implementation
In example, using common halogen lamp, D2Other lamps such as lamp, xenon lamp or flash lamp can carry out illumination, the time root of illumination to wafer
It is controlled according to the intensity of illumination of halogen lamp etc., generally, light application time is 10 minutes~120 minutes.By described in lighting process
Doped ions in first doped layer and the second doped layer 2 ' Jing Guo lighting process form the first complex with Fe ion respectively
With the second complex (not shown), in the present embodiment, the first complex and the second complex are Fe-Ga complex.
Fe-Ga complex can impact the minority carrier life time of wafer, and relative to Fe, the compound physical efficiency of Fe-Ga absorbs more non-equilibrium
Carrier, so that the carrier concentration in Fe-Ga complex increases, so that minority carrier life time reduces.Also, in the present embodiment, need
Illumination is wanted as far as possible for a long time, to measure the value of stable minority carrier life time.During Illumination completion after, by benchmark wafer and to
It surveys wafer 1 to be transmitted in minority carrier life time measurement cavity 50, as shown in figure 1 E process.In minority carrier life time measurement cavity 50, second
Measurement obtains the second benchmark minority carrier life time Tbl2 of benchmark wafer and the second minority carrier life time Tw2 of wafer to be measured 1.It needs to illustrate
It is, it, can continuous illumination, measurement alternating if to obtain the curve graph of the time of minority carrier life time and illumination in the present embodiment
It carries out, until the minority carrier life time of measurement is stablized, that is, needs benchmark wafer and wafer to be measured 1 in illumination cavity 30 and minority carrier life time
It is transmitted back and forth in measurement cavity 50.The content of Fe in wafer is different, so as to cause the otherness that declines of minority carrier life time of wafer,
Judge that the content of Fe is different according to the otherness of the numerical value of the decline of minority carrier life time.
Step S3 is executed, with reference to Fig. 3 d, benchmark wafer and wafer to be measured 1 are transmitted to heat treatment cavity 40, as shown in figure 1 F
Process.In heat treatment cavity 40, a heat treatment process is carried out to the benchmark wafer and the wafer to be measured 1, carries out hot place
For the heat treatment temperature that reason process uses for 50 DEG C~300 DEG C, the time for carrying out heat treatment process is 1 minute~120 minutes.By
In the first time doped layer of heat treatment process and the second doped layer 2 " through Overheating Treatment, heat treatment process makes the Fe-Ga
Complex decompose, i.e., described first complex and second complex decompose, the decomposition of Fe-Ga complex, in wafer
Carrier concentration decline therewith, thus the initial value when minority carrier life time in wafer is gradually recovered to measure for the first time.Also,
In the present embodiment, needs to be heat-treated as far as possible for a long time, measure the value of stable minority carrier life time.Later, G process as shown in figure 1.By base
Quasi-crystalline substance is round and wafer 1 to be measured once again passes to minority carrier life time measurement cavity 50, and in minority carrier life time measurement cavity 50, third time is surveyed
The minority carrier life time for measuring the benchmark wafer and the wafer to be measured 1 respectively obtains the third benchmark minority carrier life time of benchmark wafer
The third minority carrier life time Tw3 of Tbl3 and wafer to be measured 1.Likewise, in the present embodiment, if to obtain minority carrier life time and heat treatment
Time curve graph, can continuous heat treatment process, measurement alternately, until the minority carrier life time of measurement is stablized, need
Illustrate, if the decline of the minority carrier life time of wafer is due to caused by Fe-Ga complex, after heating, wafer lacks
The sub- service life, avoiding the decline of minority carrier life time was due to caused by other factors, thus benchmark since Fe-Ga separation can just restore
The third benchmark minority carrier life time Tbl3 of wafer and the first benchmark minority carrier life time Tbl1 are close, the third of wafer 1 to be measured
The minority carrier life time Tw3 and close Tw1 of the first minority carrier life time.
Finally, with reference to H process in Fig. 1, benchmark wafer and wafer to be measured are passed after being completed after all testing procedures
Into wafer carrying platform 10, benchmark wafer and wafer to be measured 1 are taken out.
Difference tests the curve of the minority carrier life time for the benchmark wafer that the moment obtains refering to what is shown in Fig. 4, the different test moment obtain
The curve of the minority carrier life time of wafer to be measured 1 out is with reference to shown in Fig. 5.If the first benchmark minority carrier life time Tbl of benchmark wafer and
Three benchmark minority carrier life time Tbl3 are almost the same, the first minority carrier life time Tw1 and third minority carrier life time Tw3 of wafer to be measured almost phase
Together, then the variation for illustrating the minority carrier life time of wafer is due to caused by internal Fe impurity, so as to few according to the second benchmark
The difference of the decline of sub- service life Tbl2 and the second minority carrier life time Tw2 judges whether iron content is abnormal.
Execute step S4, according to Fig. 4 and Fig. 5, the third benchmark minority carrier life time Tbl3 of benchmark wafer and the first benchmark
Minority carrier life time Tbl1 is close, and the third minority carrier life time Tw3 and the first minority carrier life time Tw1 of wafer 1 to be measured are close, then explanation is few
The decline in sub- service life is due to caused by Fe-Ga complex.Wherein, the second benchmark minority carrier life time Tbl2 of benchmark wafer and
Difference between the first benchmark minority carrier life time Tbl1 is the first difference, the second minority carrier life time Tw2 of wafer 1 to be measured and
The difference of the first minority carrier life time Tw1 be the second difference, if second difference be greater than first difference, illustrate to
The Fe-Ga complex formed in survey wafer 1 is more, so that minority carrier life time decline is more, to judge in the wafer to be measured 1
Iron content is abnormal.Also, the second difference is bigger compared to the first difference, illustrates that the content of the Fe in wafer is higher, thus according to
The size relation of second difference, can with the size relation for obtaining the iron content in wafer of sxemiquantitative,
It is not limited to adulterate using gallium in addition, being doped benchmark wafer and wafer to be measured 1 in the present invention, can also adopt
With boron doping, the doped layer of boron is formed.Under illumination condition, boron and Fe form Fe-B complex, same based on Fe-Ga composite bulk phase
Principle so that the minority carrier life time in wafer reduces, also, Fe-B complex can decompose after Overheating Treatment, thus
So that the minority carrier life time of wafer restores.Likewise, according to the minority carrier life time decline after 1 illumination of benchmark wafer and wafer to be measured
The difference in size of value, it can be determined that whether the content of the Fe in wafer 1 to be measured is normal.
In addition, the abnormal test of Fe content is only carried out with benchmark wafer and a wafer to be measured, in this hair in the present embodiment
In bright other embodiments, multiple wafers to be measured such as two, three can also be tested, test comparative approach with
Method in the present embodiment is identical, and the present invention should not be limited with the present embodiment content.
In conclusion in detection wafer of the invention iron content exception device and method, in benchmark wafer and to be measured
Crystal column surface forms the first doped layer and the second doped layer, and it is compound that Doped ions form first with Fe ion under conditions of illumination
Body and the second complex, so that the minority carrier life time of wafer reduces, after carrying out heat treatment process to wafer, the first complex
It can be decomposed with the second complex, the minority carrier life time of wafer can restore initial value again.Therefore, pass through the wafer of measurement different moments
Minority carrier life time, and the numerical value that the minority carrier life time of wafer to be measured and benchmark problem wafer declines is compared, so as to judge
Whether the content of the Fe in wafer to be measured is abnormal.Also, in the present invention, the content of Fe is higher, the first complex of formation and
Two complexs are more, and the minority carrier life time of wafer is smaller, therefore, the difference of the iron content between different wafers can be obtained with sxemiquantitative
It is different.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (13)
1. a kind of method of iron content exception in detection wafer characterized by comprising
Benchmark wafer and wafer to be measured are provided, form the first doped layer in the benchmark wafer and the crystal column surface to be measured respectively
With the second doped layer, measure the minority carrier life time of the benchmark wafer and the wafer to be measured, obtain the first benchmark minority carrier life time and
First minority carrier life time；
One During Illumination, first doped layer and second doped layer are carried out to the benchmark wafer and the wafer to be measured
In Doped ions form the first complex and the second complex with iron ion respectively, measure the benchmark wafer and described to be measured
The minority carrier life time of wafer respectively obtains the second benchmark minority carrier life time and the second minority carrier life time；
One heat treatment process is carried out to the benchmark wafer and the wafer to be measured, makes first complex and described respectively
Second complex decomposes, and measures the minority carrier life time of the benchmark wafer and the wafer to be measured, respectively obtains the few son of third benchmark
Service life and third minority carrier life time；
The difference of the second benchmark minority carrier life time and the first benchmark minority carrier life time forms the first difference, described second few son
The difference of service life and first minority carrier life time forms the second difference, if the third benchmark minority carrier life time and the few son of the first benchmark
Difference between service life is less than first difference, and the difference between the third minority carrier life time and first minority carrier life time
Less than second difference, and when second difference is greater than first difference, then the iron content in the wafer to be measured is different
Often.
2. as described in claim 1 detection wafer in iron content exception method, which is characterized in that use ion implanting or
Chemical vapor deposition process is doped in the benchmark wafer and the crystal column surface to be measured, formed first doped layer and
Second doped layer.
3. as claimed in claim 2 detection wafer in iron content exception method, which is characterized in that the benchmark wafer with
The crystal column surface to be measured carries out gallium doping or boron doping.
4. detecting the method for iron content exception in wafer as claimed in claim 3, which is characterized in that carry out gallium doping or boron is mixed
Miscellaneous doping concentration is 1014cm-3~1017cm-3。
5. detecting the method for iron content exception in wafer as claimed in claim 3, which is characterized in that before carrying out illumination,
One rapid thermal annealing process is carried out to first doped layer and second doped layer.
6. detecting the method for iron content exception in wafer as claimed in claim 5, which is characterized in that in rapid thermal annealing process
The annealing temperature used is 100 DEG C~300 DEG C.
7. detecting the method for iron content exception in wafer as described in claim 1, which is characterized in that carry out the light of During Illumination
It is 10 minutes~120 minutes according to the time.
8. detecting the method for iron content exception in wafer as described in claim 1, which is characterized in that carry out heat treatment process and adopt
Heat treatment temperature is 50 DEG C~300 DEG C.
9. detecting the method for iron content exception in wafer as claimed in claim 8, which is characterized in that carry out heat treatment process
Time is 1 minute~120 minutes.
10. the device of iron content exception in a kind of detection wafer characterized by comprising
Wafer carrying platform, for placing wafer；
Cavity is injected, for forming doped structure in crystal column surface；
Illumination cavity, for carrying out lighting process to wafer；
It is heat-treated cavity, for being heat-treated to wafer；
Minority carrier life time measures cavity, the minority carrier life time for test wafer；
Wherein, the wafer is transmitted between each cavity, and the device of iron content exception uses in the detection wafer
Whether the method for iron content exception is different to iron content in wafer in detection wafer as described in any one of claim 1~9
Often test.
11. detecting the device of iron content exception in wafer as claimed in claim 10, which is characterized in that in the illumination cavity
Using halogen lamp, D2Lamp, xenon lamp or flash lamp carry out illumination.
12. detecting the device of iron content exception in wafer as claimed in claim 10, which is characterized in that the minority carrier life time is surveyed
It measures in cavity, the accuracy for measuring the minority carrier life time of wafer is 0.1 microsecond~1.0 musec orders.
13. detecting the device of iron content exception in wafer as claimed in claim 10, which is characterized in that iron contains in detection wafer
The abnormal device of amount further includes one for transmitting the manipulator of wafer.
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| JPS58174545A (en) * | 1982-04-06 | 1983-10-13 | Nippon Steel Corp | Continuously cast high carbon steel wire for deformed working |
| CN1087208A (en) * | 1992-09-23 | 1994-05-25 | Memc电子材料股份公司 | Remove the impurity in the silicon and improve the method for its minority carrier lifetime |
| CN103245767A (en) * | 2013-02-22 | 2013-08-14 | 无锡市申瑞生物制品有限公司 | Network monitoring system and method for real-time collection of heavy metal content |
| CN103983540A (en) * | 2014-05-13 | 2014-08-13 | 北京七星华创电子股份有限公司 | Method of determining confidence level of body iron test value |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS58174545A (en) * | 1982-04-06 | 1983-10-13 | Nippon Steel Corp | Continuously cast high carbon steel wire for deformed working |
| CN1087208A (en) * | 1992-09-23 | 1994-05-25 | Memc电子材料股份公司 | Remove the impurity in the silicon and improve the method for its minority carrier lifetime |
| CN103245767A (en) * | 2013-02-22 | 2013-08-14 | 无锡市申瑞生物制品有限公司 | Network monitoring system and method for real-time collection of heavy metal content |
| CN103983540A (en) * | 2014-05-13 | 2014-08-13 | 北京七星华创电子股份有限公司 | Method of determining confidence level of body iron test value |
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