CN106504702A - AMOLED pixel-driving circuits and driving method - Google Patents
AMOLED pixel-driving circuits and driving method Download PDFInfo
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- CN106504702A CN106504702A CN201610908828.6A CN201610908828A CN106504702A CN 106504702 A CN106504702 A CN 106504702A CN 201610908828 A CN201610908828 A CN 201610908828A CN 106504702 A CN106504702 A CN 106504702A
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- 229920001621 AMOLED Polymers 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 216
- 239000010408 film Substances 0.000 claims abstract description 103
- 241000750042 Vini Species 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims description 10
- 230000003446 memory effect Effects 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 10
- 230000005611 electricity Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0233—Improving the luminance or brightness uniformity across the screen
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Abstract
The present invention provides a kind of AMOLED pixel-driving circuits and driving method.The AMOLED pixel-driving circuits of the present invention are 6T1C structures，Including as the first film transistor (T1) for driving thin film transistor (TFT)、Second thin film transistor (TFT) (T2)、3rd thin film transistor (TFT) (T3)、4th thin film transistor (TFT) (T4)、5th thin film transistor (TFT) (T5)、6th thin film transistor (TFT) (T6)、Electric capacity (C1)、And Organic Light Emitting Diode (D1)，Access scanning signal (Scan)、First luminous signal (EM1)、Second luminous signal (EM2)、Voltage data signal (Vdata)、And initialization voltage (Vini)，The circuit is capable of the threshold voltage of effective compensation driving thin film transistor (TFT)，Solve the problems, such as unstable by the electric current for flowing through Organic Light Emitting Diode caused by threshold voltage shift，Ensure that the luminosity of Organic Light Emitting Diode is uniform，Improve the display effect of picture.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of AMOLED pixel-driving circuits and driving method.
Background technology
Organic Light Emitting Diode (Organic Light Emitting Display, OLED) display device has spontaneous
Light, driving voltage are low, luminous efficiency is high, response time is short, definition and contrast is high, nearly 180 ° of visual angles, use temperature range
Many advantages, such as width, achievable Flexible Displays and large area total colouring, it is the display for most having development potentiality to be known as by industry
Device.
OLED display according to type of drive can be divided into passive matrix OLED (Passive Matrix OLED,
) and active array type OLED (Active Matrix OLED, AMOLED) two big class, i.e. direct addressin and film crystal PMOLED
Pipe (Thin Film Transistor, TFT) two class of matrix addressing.Wherein, AMOLED has the pixel in array arrangement, category
In active display type, luminous efficacy is high, is typically used as the large scale display device of fine definition.
AMOLED is current driving apparatus, when there is electric current to flow through Organic Light Emitting Diode, organic light-emitting diode,
And luminosity is determined by the electric current for flowing through Organic Light Emitting Diode itself.Most of existing integrated circuit (Integrated
Circuit, IC) voltage signal is all only transmitted, therefore the pixel-driving circuit of AMOLED needs to complete for voltage signal to be changed into electricity
The task of stream signal.
Traditional AMOLED pixel-driving circuits are usually the structure that the thin film transistor (TFT) of 2T1C, i.e., two adds an electric capacity,
Fig. 1 is referred to, is existing 2T1C pixel-driving circuits, including first film transistor T10, the second thin film transistor (TFT) T20, electricity
Hold C10 and Organic Light Emitting Diode D10；The grid of first film transistor T10 is electrically connected with the second thin film transistor (TFT) T20's
Drain electrode, source electrode access power supply positive voltage OVDD, and drain electrode is electrically connected with the anode of organic light emitting diode D10；Second film crystal
The grid of pipe T20 accesses gate drive signal Gate, source electrode incoming data signal Data, and drain electrode is electrically connected with the first film crystal
The grid of pipe T10；One end of electric capacity C10 is electrically connected with the grid of first film transistor T10, and the other end is electrically connected at first
The source electrode of thin film transistor (TFT) T10；The anode of Organic Light Emitting Diode D10 is electrically connected with the drain electrode of first film transistor T10, cloudy
Access power supply negative voltage OVSS in pole.When the AMOLED pixel-driving circuits of the 2T1C work, flow through Organic Light Emitting Diode D10's
Electric current meets：
I=k × (Vsg-Vth)2
Wherein, I is the electric current for flowing through Organic Light Emitting Diode D10, and k is and drives thin film transistor (TFT) i.e. the first film crystal
The relevant constant value coefficient of pipe T10 characteristics, Vsg are to drive the thin film transistor (TFT) i.e. electricity of first film transistor T10 source electrode and grid
Pressure reduction, Vth are to drive the thin film transistor (TFT) i.e. threshold voltage of first film transistor T10, it is seen that flow through Organic Light Emitting Diode
The electric current of D10 is related to the threshold voltage for driving thin film transistor (TFT).
The reasons such as the unstability due to panel processing procedure so that the driving thin film in panel in each pixel-driving circuit is brilliant
The threshold voltage of body pipe creates a difference, and behind long-time use, the material of thin film transistor (TFT) can occur aging, generation variation, lead
The threshold voltage generation drift of cause driving thin film transistor (TFT), the problem for causing the electric current for flowing through Organic Light Emitting Diode unstable,
The non-uniform phenomenon of Display panel can be caused.And in traditional 2T1C circuits, drive thin film transistor (TFT) threshold voltage shift without
Method is improved by adjusting, it is therefore desirable to weaken threshold value electricity by way of adding new thin film transistor (TFT) or new signal
The impact that pressure drift brings, i.e., so that AMOLED pixel-driving circuits have compensation function.
Content of the invention
It is an object of the invention to provide a kind of AMOLED pixel-driving circuits, being capable of effective compensation driving thin film transistor (TFT)
Threshold voltage, make the current stabilization for flowing through Organic Light Emitting Diode, it is ensured that the luminosity of Organic Light Emitting Diode is uniform, changes
The display effect of kind picture.
The present invention also aims to a kind of AMOLED image element driving methods are provided, can be to the threshold of driving thin film transistor (TFT)
Threshold voltage carries out effective compensation, solves to be asked by the electric current for flowing through Organic Light Emitting Diode caused by threshold voltage shift is unstable
Topic, makes the luminosity of Organic Light Emitting Diode uniform, improves the display effect of picture.
For achieving the above object, the invention provides a kind of AMOLED pixel-driving circuits, including：The first film crystal
Pipe, the second thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), the 6th film crystal
Pipe, electric capacity and Organic Light Emitting Diode；
The grid of the first film transistor is electrically connected with primary nodal point, and source electrode is electrically connected with secondary nodal point, drain electrode electricity
Property connection the 3rd node；
The grid of second thin film transistor (TFT) accesses scanning signal, and source electrode is electrically connected with primary nodal point, and drain electrode electrically connects
Connect the 3rd node；
The grid of the 3rd thin film transistor (TFT) accesses scanning signal, and source electrode accesses initialization voltage, and drain electrode is electrically connected with
Fourth node；
The grid of the 4th thin film transistor (TFT) accesses scanning signal, and source electrode incoming data signal voltage, drain electrode electrically connect
Connect secondary nodal point；
The grid of the 5th thin film transistor (TFT) accesses the first luminous signal, and source electrode accesses power supply positive voltage, and drain electrode is electrically
Connection secondary nodal point；
The grid of the 6th thin film transistor (TFT) accesses the second luminous signal, and source electrode is electrically connected with the 3rd node, drain electrode electricity
Property connection fourth node；
One end of the electric capacity is electrically connected with primary nodal point, and the other end is grounded；
The anode of the Organic Light Emitting Diode is electrically connected with fourth node, and negative electrode accesses power supply negative voltage.
The first film transistor, the second thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th
Thin film transistor (TFT) and the 6th thin film transistor (TFT) be low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or
Amorphous silicon film transistor.
The scanning signal, the first luminous signal and the second luminous signal are provided by outside time schedule controller.
The scanning signal, the first luminous signal and the combined priority of the second luminous signal corresponding to an initial phase,
One threshold voltage memory phase and a driven for emitting lights stage.
The first film transistor, the second thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th
Thin film transistor (TFT) and the 6th thin film transistor (TFT) are P-type TFT；
In the initial phase, the scanning signal provides electronegative potential, and first luminous signal provides high potential, institute
State the second luminous signal and electronegative potential is provided；
In the threshold voltage memory phase, the scanning signal provides electronegative potential, the described first and second luminous signal
It is provided which high potential；
In the driven for emitting lights stage, the scanning signal provides high potential, and the described first and second luminous signal is carried
For electronegative potential.
The present invention also provides a kind of AMOLED image element driving methods, comprises the steps：
Step 1, one AMOLED pixel-driving circuits of offer；
The AMOLED pixel-driving circuits include：First film transistor, the second thin film transistor (TFT), the 3rd film crystal
Pipe, the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), the 6th thin film transistor (TFT), electric capacity and Organic Light Emitting Diode；
The grid of the first film transistor is electrically connected with primary nodal point, and source electrode is electrically connected with secondary nodal point, drain electrode electricity
Property connection the 3rd node；
The grid of second thin film transistor (TFT) accesses scanning signal, and source electrode is electrically connected with primary nodal point, and drain electrode electrically connects
Connect the 3rd node；
The grid of the 3rd thin film transistor (TFT) accesses scanning signal, and source electrode accesses initialization voltage, and drain electrode is electrically connected with
Fourth node；
The grid of the 4th thin film transistor (TFT) accesses scanning signal, and source electrode incoming data signal voltage, drain electrode electrically connect
Connect secondary nodal point；
The grid of the 5th thin film transistor (TFT) accesses the first luminous signal, and source electrode accesses power supply positive voltage, and drain electrode is electrically
Connection secondary nodal point；
The grid of the 6th thin film transistor (TFT) accesses the second luminous signal, and source electrode is electrically connected with the 3rd node, drain electrode electricity
Property connection fourth node；
One end of the electric capacity is electrically connected with primary nodal point, and the other end is grounded；
The anode of the Organic Light Emitting Diode is electrically connected with fourth node, and negative electrode accesses power supply negative voltage；
Step 2, entrance initial phase；
The scanning signal controls second, third and the 4th thin film transistor (TFT) and opens, the first luminous signal control the
Five thin film transistor (TFT)s cut out, and second luminous signal controls the 6th thin film transistor (TFT) and opens, fourth node write initialization electricity
Pressure, Organic Light Emitting Diode do not light, and primary nodal point write initialization voltage is simultaneously stored in electric capacity, and secondary nodal point writes data
Signal voltage；
Step 3, entrance threshold voltage memory phase；
The scanning signal controls second, third and the 4th thin film transistor (TFT) is opened, the described first and second luminous letter
Number respectively the 5th and the 6th thin film transistor (TFT) of control cuts out, and fourth node keeps initialization voltage, Organic Light Emitting Diode not to send out
Light, secondary nodal point keep voltage data signal, and the voltage of primary nodal point increases continuously until which is equal to voltage data signal and the
The difference of the threshold voltage of one thin film transistor (TFT), the voltage of primary nodal point are stored in electric capacity；
Step 4, entrance driven for emitting lights stage；
The scanning signal controls second, third and the 4th thin film transistor (TFT) cuts out, the described first and second luminous letter
Number respectively the 5th and the 6th thin film transistor (TFT) of control is opened, and the voltage of primary nodal point is kept using the memory action of electric capacity
In voltage data signal and the difference of the threshold voltage of first film transistor, secondary nodal point writes power supply positive voltage, and first is thin
Film transistor is opened, organic light-emitting diode, and flows through the electric current and the first film crystal of the Organic Light Emitting Diode
The threshold voltage of pipe is unrelated.
The first film transistor, the second thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th
Thin film transistor (TFT) and the 6th thin film transistor (TFT) be low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or
Amorphous silicon film transistor.
The scanning signal, the first luminous signal and the second luminous signal are provided by outside time schedule controller.
The first film transistor, the second thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th
Thin film transistor (TFT) and the 6th thin film transistor (TFT) are P-type TFT；
In the initial phase, the scanning signal provides electronegative potential, and first luminous signal provides high potential, institute
State the second luminous signal and electronegative potential is provided；
In the threshold voltage memory phase, the scanning signal provides electronegative potential, the described first and second luminous signal
It is provided which high potential；
In the driven for emitting lights stage, the scanning signal provides high potential, and the described first and second luminous signal is carried
For electronegative potential.
Beneficial effects of the present invention：A kind of AMOLED pixel-driving circuits that the present invention is provided, the AMOLED pixel drivers
Circuit is 6T1C structures, initial phase control second, third, the 4th and the 6th thin film transistor (TFT) open, the 5th thin film is brilliant
Body pipe is closed, and so as to initialization voltage being write Organic Light Emitting Diode anode and driving the grid of thin film transistor (TFT), and is protected
Hold Organic Light Emitting Diode not light；Second, third is controlled in threshold voltage memory phase and the 4th thin film transistor (TFT) is opened,
5th and the 6th thin film transistor (TFT) cuts out, and makes the voltage of the grid of first film transistor be increased to voltage data signal and the
The difference of the threshold voltage of one thin film transistor (TFT)；In driven for emitting lights stage control, second, third and the 4th thin film transistor (TFT) are closed
Close, the 5th and the 6th thin film transistor (TFT) is opened, protect using the memory action of electric capacity the voltage of the grid of first film transistor
The difference of the threshold voltage in voltage data signal Yu first film transistor is held, first film transistor is opened, and makes organic
Optical diode lights, and it is unrelated with the threshold voltage of first film transistor to flow through the electric current of Organic Light Emitting Diode, so as to
Enough ensure that the luminosity of Organic Light Emitting Diode is uniform, improve the display effect of picture.A kind of AMOLED that the present invention is provided
Image element driving method, can carry out effective compensation to the threshold voltage for driving thin film transistor (TFT), solve to be led by threshold voltage shift
The unstable problem of the electric current for flowing through Organic Light Emitting Diode for causing, makes the luminosity of Organic Light Emitting Diode uniform, improves
The display effect of picture.
Description of the drawings
In order to be able to be further understood that feature and the technology contents of the present invention, refer to below in connection with the detailed of the present invention
Illustrate and accompanying drawing, but accompanying drawing is only provided with reference to being used with explanation, is not used for being any limitation as the present invention.
In accompanying drawing,
Fig. 1 is the circuit diagram of the AMOLED pixel-driving circuits of existing 2T1C structures；
Fig. 2 is the circuit diagram of the AMOLED pixel-driving circuits of the present invention；
Fig. 3 is the sequential chart of the AMOLED pixel-driving circuits of the present invention；
The schematic diagram of the step of Fig. 4 is the AMOLED image element driving methods of the present invention 2；
The schematic diagram of the step of Fig. 5 is the AMOLED image element driving methods of the present invention 3；
The schematic diagram of the step of Fig. 6 is the AMOLED image element driving methods of the present invention 4.
Specific embodiment
For further illustrating the technological means that is taken of the invention and its effect, below in conjunction with being preferable to carry out for the present invention
Example and its accompanying drawing are described in detail.
Fig. 2 and Fig. 3 is referred to, the present invention provides a kind of AMOLED pixel-driving circuits of 6T1C structures, including：First is thin
Film transistor T1, the second thin film transistor (TFT) T2, the 3rd thin film transistor (TFT) T3, the 4th thin film transistor (TFT) T4, the 5th thin film transistor (TFT)
T5, the 6th thin film transistor (TFT) T6, electric capacity C1 and Organic Light Emitting Diode D1.
First film transistor T1 is driving thin film transistor (TFT), for driving Organic Light Emitting Diode D1 to light, its
Grid is electrically connected with primary nodal point G, and source electrode is electrically connected with secondary nodal point S, and drain electrode is electrically connected with the 3rd node D.
The grid of the second thin film transistor (TFT) T2 accesses scanning signal Scan, and source electrode is electrically connected with primary nodal point G, drain electrode
It is electrically connected with the 3rd node D.
The grid of the 3rd thin film transistor (TFT) T3 accesses scanning signal Scan, and source electrode accesses initialization voltage Vini, leakage
Pole is electrically connected with fourth node N.
Grid access scanning signal Scan of the 4th thin film transistor (TFT) T4, source electrode incoming data signal voltage Vdata,
Drain electrode is electrically connected with secondary nodal point S.
The grid of the 5th thin film transistor (TFT) T5 accesses the first luminous signal EM1, and source electrode accesses power supply positive voltage OVDD,
Drain electrode is electrically connected with secondary nodal point S.
The grid of the 6th thin film transistor (TFT) T6 accesses the second luminous signal EM2, and source electrode is electrically connected with the 3rd node D,
Drain electrode is electrically connected with fourth node N.
One end of the electric capacity C1 is electrically connected with primary nodal point G, and the other end is grounded.
The anode of the Organic Light Emitting Diode D1 is electrically connected with fourth node N, and negative electrode accesses power supply negative voltage OVSS.
Specifically, first film transistor T1, the second thin film transistor (TFT) T2, the 3rd thin film transistor (TFT) T3, the 4th thin
Film transistor T4, the 5th thin film transistor (TFT) T5 and the 6th thin film transistor (TFT) T6 are low-temperature polysilicon film transistor, oxide
Semiconductor thin-film transistor or amorphous silicon film transistor.
Specifically, when scanning signal Scan, the first luminous signal EM1 and the second luminous signal EM2 are by outside
Sequence controller is provided.
Specifically, Fig. 3 is referred to, scanning signal Scan, the first luminous signal EM1 and the second luminous signal EM2 phases
Combination successively corresponds to an initial phase 1, a threshold voltage memory phase 2 and a driven for emitting lights stage 3.
Fig. 4 to Fig. 6 is referred to, and combines Fig. 2 and Fig. 3, the course of work of the AMOLED pixel-driving circuits of the present invention is such as
Under：
Fig. 3 and Fig. 4 is referred to, in the initial phase 1, scanning signal Scan controls second, third and the 4th
Thin film transistor (TFT) T2, T3, T4 are opened, and the first luminous signal EM1 controls the 5th thin film transistor (TFT) T5 and closes, described second
Optical signal EM2 control the 6th thin film transistor (TFT) T6 open, fourth node N be Organic Light Emitting Diode D1 anode via opening
3rd thin film transistor (TFT) T3 writes initialization voltage Vini, and Organic Light Emitting Diode D1 does not light, and primary nodal point G is the first film
The grid of transistor T1 is via the three, the 6th for opening and second thin film transistor (TFT) T3, T6, T2 write initialization voltages Vini
And be stored in electric capacity C1, secondary nodal point S is the fourth thin film transistor (TFT) T4 of the source electrode via opening of first film transistor T1
Write voltage data signal Vdata, completes the sun to first film transistor T1 grid and source electrode and Organic Light Emitting Diode D1
The initialization of pole；
Refer to Fig. 3 and Fig. 5, in the threshold voltage memory phase 2, scanning signal Scan control second, third,
And the 4th thin film transistor (TFT) T2, T3, T4 open, described first and second luminous signal EM1, EM2 controls the 5th and the respectively
Six thin film transistor (TFT) T5, T6 are closed, and fourth node N is that the anode of Organic Light Emitting Diode D1 keeps initialization voltage Vini, has
Machine light emitting diode D1 does not light, and secondary nodal point S is that the source electrode of first film transistor T1 keeps voltage data signal Vdata,
Voltage data signal Vdata charges to electric capacity C1 via first and second thin film transistor (TFT) T1, the T2 for opening, and makes primary nodal point G
That is it is brilliant with the first film that the voltage of the grid of first film transistor T1 increases continuously until which is equal to voltage data signal Vdata
The difference of the threshold voltage of body pipe T1, i.e. Vg=Vdata Vth, voltages of the wherein Vg for the grid of first film transistor T1,
Vdata is voltage data signal, and Vth is the threshold voltage of first film transistor T1, and primary nodal point G is first film transistor
The voltage of the grid of T1 is stored in electric capacity C1；
Fig. 3 and Fig. 6 is referred to, in the driven for emitting lights stage 3, scanning signal Scan controls second, third and
Four thin film transistor (TFT) T2, T3, T4 are closed, and it is thin that described first and second luminous signal EM1, EM2 controls the 5th and the 6th respectively
Film transistor T5, T6 are opened, and cause the primary nodal point G i.e. grid of first film transistor T1 using the memory action of electric capacity C1
Voltage is maintained at the difference of voltage data signal Vdata and the threshold voltage of first film transistor T1, and secondary nodal point S is first
The source electrode of thin film transistor (TFT) T1 is via the 6th thin film transistor (TFT) T6 write power supply positive voltage OVDD for opening, first film transistor
T1 is opened, and Organic Light Emitting Diode D1 lights；
The formula of the known electric current for flowing through Organic Light Emitting Diode D1：
I=k × (Vsg-Vth)2(1)
Wherein I is the electric current for flowing through Organic Light Emitting Diode D1, and k is and drives thin film transistor (TFT) i.e. first film transistor
The relevant constant value coefficient of T1 characteristics, Vsg are to drive the thin film transistor (TFT) i.e. voltage difference of first film transistor T1 source electrode and grid,
Vth is to drive the thin film transistor (TFT) i.e. threshold voltage of first film transistor T1；
And the voltage difference of the source electrode and grid of first film transistor T1 is：
Vsg=OVDD- (Vdata-Vth) (2)
Formula (2) is substituted into formula (1),
I=k × (Vsg-Vth)2
=k × (OVDD-Vdata+Vth-Vth)2
=k × (OVDD-Vdata)2
It can be seen that flowing through current value and first film transistor T1 of first film transistor T1 and Organic Light Emitting Diode D1
Threshold voltage vt h unrelated, only relevant with voltage data signal Vdata, compensate for drive thin film transistor (TFT) threshold voltage drift
Move, solve the problems, such as unstable by the electric current that Organic Light Emitting Diode is flow through caused by threshold voltage shift, can make organic
The luminosity of light emitting diode is uniform, improves the display effect of picture.
Further, as shown in Figures 2 and 3, in a preferred embodiment of the invention, first film transistor T1,
Second thin film transistor (TFT) T2, the 3rd thin film transistor (TFT) T3, the 4th thin film transistor (TFT) T4, the 5th thin film transistor (TFT) T5 and the 6th are thin
Film transistor T6 is P-type TFT, and in the initial phase 1, scanning signal Scan provides electronegative potential, described
First luminous signal EM1 provides high potential, and the second luminous signal EM2 provides electronegative potential；Rank is stored in the threshold voltage
Section 2, scanning signal Scan provide electronegative potential, and described first and second luminous signal EM1, EM2 is provided which high potential；?
The driven for emitting lights stage 3, scanning signal Scan provide high potential, and described first and second luminous signal EM1, EM2 is equal
Electronegative potential is provided.
Fig. 4 to Fig. 6 is referred to, and combines Fig. 2 and Fig. 3, based on above-mentioned AMOLED pixel-driving circuits, the present invention is also provided
A kind of AMOLED image element driving methods, comprise the steps：
Step 1, refer to Fig. 2, there is provided AMOLED pixel-driving circuits；
The AMOLED pixel-driving circuits include：First film transistor T1, the second thin film transistor (TFT) T2, the 3rd thin film
Transistor T3, the 4th thin film transistor (TFT) T4, the 5th thin film transistor (TFT) T5, the 6th thin film transistor (TFT) T6, electric capacity C1 and organic light emission
Diode D1.
First film transistor T1 is driving thin film transistor (TFT), for driving Organic Light Emitting Diode D1 to light, its
Grid is electrically connected with primary nodal point G, and source electrode is electrically connected with secondary nodal point S, and drain electrode is electrically connected with the 3rd node D.
The grid of the second thin film transistor (TFT) T2 accesses scanning signal Scan, and source electrode is electrically connected with primary nodal point G, drain electrode
It is electrically connected with the 3rd node D.
The grid of the 3rd thin film transistor (TFT) T3 accesses scanning signal Scan, and source electrode accesses initialization voltage Vini, leakage
Pole is electrically connected with fourth node N.
Grid access scanning signal Scan of the 4th thin film transistor (TFT) T4, source electrode incoming data signal voltage Vdata,
Drain electrode is electrically connected with secondary nodal point S.
The grid of the 5th thin film transistor (TFT) T5 accesses the first luminous signal EM1, and source electrode accesses power supply positive voltage OVDD,
Drain electrode is electrically connected with secondary nodal point S.
The grid of the 6th thin film transistor (TFT) T6 accesses the second luminous signal EM2, and source electrode is electrically connected with the 3rd node D,
Drain electrode is electrically connected with fourth node N.
One end of the electric capacity C1 is electrically connected with primary nodal point G, and the other end is grounded.
The anode of the Organic Light Emitting Diode D1 is electrically connected with fourth node N, and negative electrode accesses power supply negative voltage OVSS.
Specifically, first film transistor T1, the second thin film transistor (TFT) T2, the 3rd thin film transistor (TFT) T3, the 4th thin
Film transistor T4, the 5th thin film transistor (TFT) T5 and the 6th thin film transistor (TFT) T6 are low-temperature polysilicon film transistor, oxide
Semiconductor thin-film transistor or amorphous silicon film transistor.
Specifically, when scanning signal Scan, the first luminous signal EM1 and the second luminous signal EM2 are by outside
Sequence controller is provided.
Step 2, entrance initial phase 1.
Fig. 3 and Fig. 4 is referred to, scanning signal Scan controls second, third and the 4th thin film transistor (TFT) T2, T3, T4
Open, the first luminous signal EM1 controls the 5th thin film transistor (TFT) T5 and closes, the second luminous signal EM2 controls the 6th
Thin film transistor (TFT) T6 is opened, and fourth node N is the threeth thin film transistor (TFT) T3 of the anode via opening of Organic Light Emitting Diode D1
Write initialization voltage Vini, Organic Light Emitting Diode D1 do not light, and primary nodal point G is the grid warp of first film transistor T1
Write initialization voltage Vini and be stored in electric capacity C1 by the three, the 6th for opening and second thin film transistor (TFT) T3, T6, T2,
Secondary nodal point S is that the source electrode of first film transistor T1 writes voltage data signal via the 4th thin film transistor (TFT) T4 for opening
Vdata, completes the initialization of the anode to first film transistor T1 grid and source electrode and Organic Light Emitting Diode D1.
Step 3, entrance threshold voltage memory phase 2.
Fig. 3 and Fig. 5 is referred to, scanning signal Scan controls second, third and the 4th thin film transistor (TFT) T2, T3, T4
Open, described first and second luminous signal EM1, EM2 controls the 5th and the 6th thin film transistor (TFT) T5, T6 closings respectively, the
Four node N are that the anode of Organic Light Emitting Diode D1 keeps initialization voltage Vini, Organic Light Emitting Diode D1 not to light, second
Node S is that the source electrode of first film transistor T1 keeps voltage data signal Vdata, and voltage data signal Vdata is via opening
First and second thin film transistor (TFT) T1, T2 to electric capacity C1 charge, make the primary nodal point G i.e. grid of first film transistor T1
Voltage increase continuously until which is equal to the difference of the threshold voltage of voltage data signal Vdata and first film transistor T1,
That is the voltage of Vg=Vdata Vth, wherein Vg for the grid of first film transistor T1, Vdata is voltage data signal, Vth
For the threshold voltage of first film transistor T1, primary nodal point G is that the voltage of the grid of first film transistor T1 is stored in electricity
Hold in C1.
Step 4, entrance driven for emitting lights stage 3；
Fig. 3 and Fig. 6 is referred to, scanning signal Scan controls second, third and the 4th thin film transistor (TFT) T2, T3, T4
Close, described first and second luminous signal EM1, EM2 controls the 5th and the 6th thin film transistor (TFT) T5, T6 openings respectively, by
In the memory action of electric capacity C1, primary nodal point G is that the voltage of the grid of first film transistor T1 is maintained at voltage data signal
The difference of the threshold voltage of Vdata and first film transistor T1, secondary nodal point S be first film transistor T1 source electrode via
The 6th thin film transistor (TFT) T6 write power supply positive voltage OVDD for opening, first film transistor T1 are opened, Organic Light Emitting Diode
D1 lights；
The formula of the known electric current for flowing through Organic Light Emitting Diode D1：
I=k × (Vsg-Vth)2(1)
Wherein I is the electric current for flowing through Organic Light Emitting Diode D1, and k is and drives thin film transistor (TFT) i.e. first film transistor
The relevant constant value coefficient of T1 characteristics, Vsg are to drive the thin film transistor (TFT) i.e. voltage difference of first film transistor T1 source electrode and grid,
Vth is to drive the thin film transistor (TFT) i.e. threshold voltage of first film transistor T1；
And the voltage difference of the source electrode and grid of first film transistor T1 is：
Vsg=OVDD- (Vdata-Vth) (2)
Formula (2) is substituted into formula (1),
I=k × (Vsg-Vth)2
=k × (OVDD-Vdata+Vth-Vth)2
=k × (OVDD-Vdata)2
It can be seen that flowing through current value and first film transistor T1 of first film transistor T1 and Organic Light Emitting Diode D1
Threshold voltage vt h unrelated, only relevant with voltage data signal Vdata, compensate for drive thin film transistor (TFT) threshold voltage drift
Move, solve the problems, such as unstable by the electric current that Organic Light Emitting Diode is flow through caused by threshold voltage shift, can make organic
The luminosity of light emitting diode is uniform, improves the display effect of picture.
Further, as shown in Figures 2 and 3, in a preferred embodiment of the invention, first film transistor T1,
Second thin film transistor (TFT) T2, the 3rd thin film transistor (TFT) T3, the 4th thin film transistor (TFT) T4, the 5th thin film transistor (TFT) T5 and the 6th are thin
Film transistor T6 is P-type TFT, and in the initial phase 1, scanning signal Scan provides electronegative potential, described
First luminous signal EM1 provides high potential, and the second luminous signal EM2 provides electronegative potential；Rank is stored in the threshold voltage
Section 2, scanning signal Scan provide electronegative potential, and described first and second luminous signal EM1, EM2 is provided which high potential；?
The driven for emitting lights stage 3, scanning signal Scan provide high potential, and described first and second luminous signal EM1, EM2 is equal
Electronegative potential is provided.
In sum, AMOLED pixel-driving circuits of the invention, the AMOLED pixel-driving circuits are 6T1C structures,
Initial phase control second, third, the 4th and the 6th thin film transistor (TFT) open, the 5th thin film transistor (TFT) cuts out, so as to will just
Beginningization voltage write Organic Light Emitting Diode anode and the grid of driving thin film transistor (TFT), and keep Organic Light Emitting Diode
Do not light；Second, third is controlled in threshold voltage memory phase and the 4th thin film transistor (TFT) is opened, the 5th and the 6th thin film is brilliant
Body pipe is closed, and makes the voltage of the grid of first film transistor be increased to the threshold value of voltage data signal and first film transistor
The difference of voltage；In driven for emitting lights stage control, second, third and the 4th thin film transistor (TFT) are closed, and the 5th and the 6th thin film is brilliant
Body pipe open, using the memory action of electric capacity, make the voltage of the grid of first film transistor be maintained at voltage data signal with
The difference of the threshold voltage of first film transistor, the source voltage write power supply positive voltage OVDD of first film transistor, the
One thin film transistor (TFT) is opened, and makes organic light-emitting diode, and it is brilliant with the first film to flow through the electric current of Organic Light Emitting Diode
The threshold voltage of body pipe is unrelated such that it is able to ensure that the luminosity of Organic Light Emitting Diode is uniform, improves the display effect of picture
Really.The AMOLED image element driving methods of the present invention, can carry out effective compensation to the threshold voltage for driving thin film transistor (TFT), solve
By the unstable problem of the electric current that Organic Light Emitting Diode is flow through caused by threshold voltage shift, make sending out for Organic Light Emitting Diode
Brightness is uniform, improves the display effect of picture.
The above, for the person of ordinary skill of the art, can be with technology according to the present invention scheme and technology
Other various corresponding changes and deformation are made in design, and all these changes and deformation should all belong to the claims in the present invention
Protection domain.
Claims (9)
1. a kind of AMOLED pixel-driving circuits, it is characterised in that include：First film transistor (T1), the second film crystal
Pipe (T2), the 3rd thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5), the 6th film crystal
Pipe (T6), electric capacity (C1) and Organic Light Emitting Diode (D1)；
The grid of first film transistor (T1) is electrically connected with primary nodal point (G), and source electrode is electrically connected with secondary nodal point (S),
Drain electrode is electrically connected with the 3rd node (D)；
The grid of the second thin film transistor (TFT) (T2) accesses scanning signal (Scan), and source electrode is electrically connected with primary nodal point (G), leakage
Pole is electrically connected with the 3rd node (D)；
The grid of the 3rd thin film transistor (TFT) (T3) accesses scanning signal (Scan), and source electrode accesses initialization voltage (Vini),
Drain electrode is electrically connected with fourth node (N)；
The grid of the 4th thin film transistor (TFT) (T4) accesses scanning signal (Scan), source electrode incoming data signal voltage
(Vdata), drain electrode is electrically connected with secondary nodal point (S)；
The grid of the 5th thin film transistor (TFT) (T5) accesses the first luminous signal (EM1), and source electrode accesses power supply positive voltage
(OVDD), drain electrode is electrically connected with secondary nodal point (S)；
The grid of the 6th thin film transistor (TFT) (T6) accesses the second luminous signal (EM2), and source electrode is electrically connected with the 3rd node
(D), drain electrode is electrically connected with fourth node (N)；
The one end of electric capacity (C1) is electrically connected with primary nodal point (G), and the other end is grounded；
The anode of Organic Light Emitting Diode (D1) is electrically connected with fourth node (N), and negative electrode accesses power supply negative voltage (OVSS).
2. AMOLED pixel-driving circuits as claimed in claim 1, it is characterised in that first film transistor (T1),
Second thin film transistor (TFT) (T2), the 3rd thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5),
And the 6th thin film transistor (TFT) (T6) be low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or non-crystalline silicon
Thin film transistor (TFT).
3. AMOLED pixel-driving circuits as claimed in claim 1, it is characterised in that scanning signal (Scan), first
Luminous signal (EM1) and the second luminous signal (EM2) are provided by outside time schedule controller.
4. AMOLED pixel-driving circuits as claimed in claim 1, it is characterised in that scanning signal (Scan), first
Luminous signal (EM1) and the combined priority of the second luminous signal (EM2) are deposited corresponding to an initial phase (1), a threshold voltage
Storage stage (2) and a driven for emitting lights stage (3).
5. AMOLED pixel-driving circuits as claimed in claim 4, it is characterised in that first film transistor (T1),
Second thin film transistor (TFT) (T2), the 3rd thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5),
And the 6th thin film transistor (TFT) (T6) be P-type TFT；
In the initial phase (1), scanning signal (Scan) provides electronegative potential, and the first luminous signal (EM1) is carried
For high potential, the second luminous signal (EM2) provides electronegative potential；
In threshold voltage memory phase (2), scanning signal (Scan) provides electronegative potential, described first and second
Optical signal (EM1, EM2) is provided which high potential；
In driven for emitting lights stage (3), scanning signal (Scan) provides high potential, the described first and second luminous letter
Number (EM1, EM2) is provided which electronegative potential.
6. a kind of AMOLED image element driving methods, it is characterised in that comprise the steps：
Step 1, one AMOLED pixel-driving circuits of offer；
The AMOLED pixel-driving circuits include：First film transistor (T1), the second thin film transistor (TFT) (T2), the 3rd thin film
Transistor (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5), the 6th thin film transistor (TFT) (T6), electric capacity (C1),
And Organic Light Emitting Diode (D1)；
The grid of first film transistor (T1) is electrically connected with primary nodal point (G), and source electrode is electrically connected with secondary nodal point (S),
Drain electrode is electrically connected with the 3rd node (D)；
The grid of the second thin film transistor (TFT) (T2) accesses scanning signal (Scan), and source electrode is electrically connected with primary nodal point (G), leakage
Pole is electrically connected with the 3rd node (D)；
The grid of the 3rd thin film transistor (TFT) (T3) accesses scanning signal (Scan), and source electrode accesses initialization voltage (Vini),
Drain electrode is electrically connected with fourth node (N)；
The grid of the 4th thin film transistor (TFT) (T4) accesses scanning signal (Scan), source electrode incoming data signal voltage
(Vdata), drain electrode is electrically connected with secondary nodal point (S)；
The grid of the 5th thin film transistor (TFT) (T5) accesses the first luminous signal (EM1), and source electrode accesses power supply positive voltage
(OVDD), drain electrode is electrically connected with secondary nodal point (S)；
The grid of the 6th thin film transistor (TFT) (T6) accesses the second luminous signal (EM2), and source electrode is electrically connected with the 3rd node
(D), drain electrode is electrically connected with fourth node (N)；
The one end of electric capacity (C1) is electrically connected with primary nodal point (G), and the other end is grounded；
The anode of Organic Light Emitting Diode (D1) is electrically connected with fourth node (N), and negative electrode accesses power supply negative voltage (OVSS)；
Step 2, entrance initial phase (1)；
Scanning signal (Scan) controls second, third and the 4th thin film transistor (TFT) (T2, T3, T4) is opened, described first
Optical signal (EM1) controls the 5th thin film transistor (TFT) (T5) and closes, and the second luminous signal (EM2) controls the 6th thin film transistor (TFT)
(T6) open, fourth node (N) write initialization voltage (Vini), Organic Light Emitting Diode (D1) do not light, primary nodal point (G)
Write initialization voltage (Vini) is simultaneously stored in electric capacity (C1), secondary nodal point (S) write voltage data signal (Vdata)；
Step 3, entrance threshold voltage memory phase (2)；
Scanning signal (Scan) controls second, third and the 4th thin film transistor (TFT) (T2, T3, T4) is opened, described first,
And second luminous signal (EM1, EM2) control respectively the 5th and the 6th thin film transistor (TFT) (T5, T6) closing, fourth node (N) protect
Initialization voltage (Vini) is held, Organic Light Emitting Diode (D1) does not light, secondary nodal point (S) keeps voltage data signal
(Vdata), primary nodal point (G) increases continuously until which is equal to voltage data signal (Vdata) and first film transistor (T1)
Threshold voltage difference, the voltage of primary nodal point (G) is stored in electric capacity (C1)；
Step 4, entrance driven for emitting lights stage (3)；
Scanning signal (Scan) controls second, third and the 4th thin film transistor (TFT) (T2, T3, T4) cuts out, described first,
And second luminous signal (EM1, EM2) control respectively the 5th and the 6th thin film transistor (TFT) (T5, T6) opening, using electric capacity (C1)
Memory action cause primary nodal point (G) voltage to be maintained at voltage data signal (Vdata) and first film transistor (T1)
The difference of threshold voltage, secondary nodal point (S) write power supply positive voltage (OVDD), first film transistor (T1) are opened, You Jifa
Optical diode (D1) lights, and flows through the electric current of the Organic Light Emitting Diode (D1) and the threshold value of first film transistor (T1)
Voltage is unrelated.
7. AMOLED image element driving methods as claimed in claim 6, it is characterised in that first film transistor (T1),
Second thin film transistor (TFT) (T2), the 3rd thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5),
And the 6th thin film transistor (TFT) (T6) be low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or non-crystalline silicon
Thin film transistor (TFT).
8. AMOLED image element driving methods as claimed in claim 6, it is characterised in that scanning signal (Scan), first
Luminous signal (EM1) and the second luminous signal (EM2) are provided by outside time schedule controller.
9. AMOLED image element driving methods as claimed in claim 6, it is characterised in that first film transistor (T1),
Second thin film transistor (TFT) (T2), the 3rd thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5),
And the 6th thin film transistor (TFT) (T6) be P-type TFT；
In the initial phase (1), scanning signal (Scan) provides electronegative potential, and the first luminous signal (EM1) is carried
For high potential, the second luminous signal (EM2) provides electronegative potential；
In threshold voltage memory phase (2), scanning signal (Scan) provides electronegative potential, described first and second
Optical signal (EM1, EM2) is provided which high potential；
In driven for emitting lights stage (3), scanning signal (Scan) provides high potential, the described first and second luminous letter
Number (EM1, EM2) is provided which electronegative potential.
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| PCT/CN2016/110912 WO2018072298A1 (en) | 2016-10-18 | 2016-12-20 | Amoled pixel driving circuit and driving method |
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| CN111951716B (en) * | 2019-04-30 | 2024-03-22 | 上海和辉光电股份有限公司 | Pixel circuit, driving method and display |
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