CN107331352B - A kind of OLED pixel driving circuit and image element driving method - Google Patents
A kind of OLED pixel driving circuit and image element driving method Download PDFInfo
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- CN107331352B CN107331352B CN201710699755.9A CN201710699755A CN107331352B CN 107331352 B CN107331352 B CN 107331352B CN 201710699755 A CN201710699755 A CN 201710699755A CN 107331352 B CN107331352 B CN 107331352B
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3266—Details of drivers for scan electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3275—Details of drivers for data electrodes
- G09G3/3291—Details of drivers for data electrodes in which the data driver supplies a variable data voltage for setting the current through, or the voltage across, the light-emitting elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0233—Improving the luminance or brightness uniformity across the screen
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of El Displays (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
The present invention provides a kind of OLED pixel driving circuit and image element driving method, the driving circuit includes: that the grid of the third thin film transistor (TFT) accesses the second scanning signal, and the source electrode of the source electrode of the third thin film transistor (TFT) and the 4th thin film transistor (TFT) all accesses data voltage or initialization voltage；The grid of 4th thin film transistor (TFT) accesses third scanning signal；The grid of the first film transistor is connect with one end of the source electrode of second thin film transistor (TFT) and the capacitor respectively, the other end ground connection of the capacitor；The grid of second thin film transistor (TFT) accesses the first scanning signal, and the drain electrode of second thin film transistor (TFT) is connect with the drain electrode of the first film transistor, the drain electrode of the 4th thin film transistor (TFT) and the drain electrode of the 6th thin film transistor (TFT) respectively.OLED pixel driving circuit of the invention and image element driving method can be improved the show uniformity and luminous efficiency of panel.
Description
[technical field]
The present invention relates to field of display technology, more particularly to a kind of OLED pixel driving circuit and image element driving method.
[background technique]
Organic Light Emitting Diode (Organic Light Emitting Display, OLED) display device has spontaneous
Light, driving voltage are low, luminous efficiency is high, the response time is short, clarity and contrast are high, nearly 180 ° of visual angles, use temperature ranges
Width becomes the display device for most having development potentiality, it can be achieved that many advantages, such as Flexible Displays are with large area total colouring.
Traditional OLED pixel driving circuit is usually 2T1C, i.e. the structure that two thin film transistor (TFT)s add a capacitor, will
Voltage transformation is electric current.
As shown in Figure 1, the OLED pixel driving circuit of existing 2T1C structure, including first film transistor T10, second
Thin film transistor (TFT) T20, capacitor C10 and Organic Light Emitting Diode D10, the first film transistor T10 are driving film crystal
Pipe, the second thin film transistor (TFT) T20 are switching thin-film transistor, and the capacitor C10 is storage capacitance.Specifically, described
The grid of two thin film transistor (TFT) T20 accesses scanning signal Gate, source electrode incoming data signal Data, and it is thin that drain electrode is electrically connected first
The grid of film transistor T10；The source electrode of the first film transistor T10 accesses power supply positive voltage OVDD, and drain electrode is electrically connected
The anode of Organic Light Emitting Diode D10；The cathode of Organic Light Emitting Diode D10 accesses power supply negative voltage OVSS.The one of capacitor C10
End is electrically connected the grid of first film transistor T10, and the other end is electrically connected the source electrode of first film transistor T10.It should
When driving to OLED, the electric current for flowing through Organic Light Emitting Diode D10 meets 2T1C pixel-driving circuit:
I=k × (Vgs-Vth)2；
Wherein, I is the electric current for flowing through Organic Light Emitting Diode D10, and k is the intrinsic conduction factor for driving thin film transistor (TFT),
Voltage difference of the Vgs between first film transistor T10 grid and source electrode, Vth are the threshold voltage of first film transistor T10,
It can be seen that the electric current for flowing through Organic Light Emitting Diode D10 is related to the driving threshold voltage of thin film transistor (TFT).
The factors such as the unstability due to panel processing procedure, so that the driving film in panel in each pixel-driving circuit is brilliant
The threshold voltage of body pipe creates a difference.Even if equal data voltage to be applied to the driving film in each pixel-driving circuit
Transistor, the electric current that can also flow into Organic Light Emitting Diode is inconsistent, to influence the homogeneity of image quality.And
With driving thin film transistor (TFT) driving time it is elongated, the material of thin film transistor (TFT) will appear aging, variation, cause to drive thin
The threshold voltage of film transistor generates drift, and the degree of aging of thin-film-transistor material is different, each driving thin film transistor (TFT)
Threshold voltage shift amount is also different, to the phenomenon of Display panel unevenness occur, while can make the unlatching for driving thin film transistor (TFT)
Voltage rises, and flows into the current reduction of Organic Light Emitting Diode, leads to problems such as panel luminance reduce, luminous efficiency decline.
Therefore, it is necessary to provide a kind of OLED pixel driving circuit and image element driving method, deposited with solving the prior art
The problem of.
[summary of the invention]
The purpose of the present invention is to provide a kind of OLED pixel driving circuit and image element driving methods, and it is aobvious to can be improved panel
The brightness and luminous efficiency of the homogeneity, panel shown.
In order to solve the above technical problems, the present invention provides a kind of OLED pixel driving circuit comprising:
First film transistor, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th film
Transistor, the 6th thin film transistor (TFT), capacitor and Organic Light Emitting Diode；
The grid of 5th thin film transistor (TFT) accesses the 4th scanning signal, the source electrode access of the 5th thin film transistor (TFT)
Power supply positive voltage, the 5th thin film transistor (TFT) drain electrode respectively with the drain electrode of the third thin film transistor (TFT) and described first
The source electrode of thin film transistor (TFT) connects；
The grid of the third thin film transistor (TFT) accesses the second scanning signal, the source electrode of the third thin film transistor (TFT) and institute
The source electrode for stating the 4th thin film transistor (TFT) all accesses data voltage or initialization voltage；The grid of 4th thin film transistor (TFT) connects
Enter third scanning signal；
The grid of the first film transistor respectively with the source electrode of second thin film transistor (TFT) and the capacitor
One end connection, the other end ground connection of the capacitor；
The grid of second thin film transistor (TFT) accesses the first scanning signal, the drain electrode difference of second thin film transistor (TFT)
Drain electrode, the drain electrode of the 4th thin film transistor (TFT) and the leakage of the 6th thin film transistor (TFT) with the first film transistor
Pole connection；
The grid of 6th thin film transistor (TFT) accesses the 4th scanning signal, the source electrode of the 6th thin film transistor (TFT) and institute
The anode connection of Organic Light Emitting Diode is stated, the cathode of the Organic Light Emitting Diode accesses power supply negative voltage.
In OLED pixel driving circuit of the invention, the first film transistor, second thin film transistor (TFT), institute
State third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT) and the 6th thin film transistor (TFT)
It is one of low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor and amorphous silicon film transistor.
In OLED pixel driving circuit of the invention, the first film transistor, second thin film transistor (TFT), institute
State third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT) and the 6th thin film transistor (TFT)
It is P-type TFT.
In OLED pixel driving circuit of the invention, first scanning signal, second scanning signal, described
Three scanning signals and the 4th scanning signal are combined, successively correspond to initial phase, threshold voltage memory phase with
And the luminescence display stage；
In the initial phase, first scanning signal and the third scanning signal are all low potential, described
Two scanning signals and the 4th scanning signal are high potential；
In the threshold voltage memory phase, first scanning signal and second scanning signal are all low potential,
The third scanning signal and the 4th scanning signal are all high potential；
In the luminescence display stage, first scanning signal, second scanning signal and third scanning
Signal is all high potential, and the 4th scanning signal is low potential.
In OLED pixel driving circuit of the invention, in the initial phase, the source of the third thin film transistor (TFT)
The source electrode of pole and the 4th thin film transistor (TFT) all accesses the initialization voltage；
In threshold voltage memory phase and the luminescence display stage, the source electrode of the third thin film transistor (TFT) and described
The source electrode of four thin film transistor (TFT)s all accesses the data voltage.
The present invention also provides a kind of OLED pixel driving methods comprising following steps:
OLED pixel driving circuit is provided；
Into initial phase；
Into threshold voltage memory phase；And
Into the luminescence display stage；
Wherein the OLED pixel driving circuit includes:
First film transistor, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th film
Transistor, the 6th thin film transistor (TFT), capacitor and Organic Light Emitting Diode；
The grid of 5th thin film transistor (TFT) accesses the 4th scanning signal, the source electrode access of the 5th thin film transistor (TFT)
Power supply positive voltage, the 5th thin film transistor (TFT) drain electrode respectively with the drain electrode of the third thin film transistor (TFT) and described first
The source electrode of thin film transistor (TFT) connects；
The grid of the third thin film transistor (TFT) accesses the second scanning signal, the source electrode of the third thin film transistor (TFT) and institute
The source electrode for stating the 4th thin film transistor (TFT) all accesses data voltage or initialization voltage；The grid of 4th thin film transistor (TFT) connects
Enter third scanning signal；
The grid of the first film transistor respectively with the source electrode of second thin film transistor (TFT) and the capacitor
One end connection, the other end ground connection of the capacitor；
The grid of second thin film transistor (TFT) accesses the first scanning signal, the drain electrode difference of second thin film transistor (TFT)
Drain electrode, the drain electrode of the 4th thin film transistor (TFT) and the leakage of the 6th thin film transistor (TFT) with the first film transistor
Pole connection；
The grid of 6th thin film transistor (TFT) accesses the 4th scanning signal, the source electrode of the 6th thin film transistor (TFT) and institute
The anode connection of Organic Light Emitting Diode is stated, the cathode of the Organic Light Emitting Diode accesses power supply negative voltage；
In the initial phase, first scanning signal provides low potential, and second thin film transistor (TFT) is opened；Institute
It states third scanning signal and low potential is provided, the 4th thin film transistor (TFT) is opened；Second scanning signal provides high potential, institute
State the closing of third thin film transistor (TFT)；4th scanning signal provides high potential, and the five, the 6th thin film transistor (TFT) is closed；
The voltage of the grid of the first film transistor is equal to the initial voltage；
In threshold voltage memory phase, first scanning signal provides low potential, and second thin film transistor (TFT) is opened；
Second scanning signal provides low potential, and the third thin film transistor (TFT) is opened；The third scanning signal provides high potential,
4th thin film transistor (TFT) is closed；4th scanning signal provides high potential, and the five, the 6th thin film transistor (TFT) closes
It closes；The voltage of the source electrode of the first film transistor is equal to the data voltage, the grid of the first film transistor
Voltage change is to Vdata-Vth, and wherein Vdata is data voltage, and Vth is the threshold voltage of the first film transistor；
In the luminescence display stage, first scanning signal provides high potential, and second thin film transistor (TFT) is closed；
Second scanning signal provides high potential, and the third thin film transistor (TFT) is closed；The third scanning signal provides high potential,
4th thin film transistor (TFT) is closed；4th scanning signal provides low potential, and the five, the 6th thin film transistor (TFT) is beaten
It opens；The organic light-emitting diode, and flow through the Organic Light Emitting Diode electric current and the first film transistor
Threshold voltage it is unrelated.
In OLED pixel driving method of the invention, in the luminescence display stage, the first film transistor
The voltage change of source electrode is to power supply positive voltage, and the voltage of the grid of the first film transistor remains unchanged, to flow through
The electric current for stating Organic Light Emitting Diode is unrelated with the threshold voltage of the first film transistor.
In OLED pixel driving method of the invention, in the initial phase, the source of the third thin film transistor (TFT)
The source electrode of pole and the 4th thin film transistor (TFT) all accesses the initialization voltage；
In the threshold voltage memory phase and the luminescence display stage, the source electrode of the third thin film transistor (TFT) and institute
The source electrode for stating the 4th thin film transistor (TFT) all accesses the data voltage.
In OLED pixel driving method of the invention, first scanning signal, second scanning signal, described
Three scanning signals and the 4th scanning signal pass through external sequence controller and generate.
In OLED pixel driving method of the invention, the first film transistor is driving thin film transistor (TFT), described
6th thin film transistor (TFT) is switching thin-film transistor.
OLED pixel driving circuit of the invention and image element driving method, by changing to existing pixel-driving circuit
Into it is equal to improve Display panel to eliminate influence of the threshold voltage to Organic Light Emitting Diode of driving thin film transistor (TFT)
Even property, the problems such as furthermore also avoiding brightness reduction, the luminous efficiency decline that panel occurs with the aging of OLED device.
[Detailed description of the invention]
Fig. 1 is the circuit diagram for being currently used for the 2T1C pixel-driving circuit of OLED；
Fig. 2 is the circuit diagram for being currently used for the 8T1C pixel-driving circuit of OLED；
Fig. 3 is the circuit diagram for being currently used for the 7T1C pixel-driving circuit of OLED；
Fig. 4 is the circuit diagram of OLED pixel driving circuit of the invention；
Fig. 5 is the timing diagram of OLED pixel driving circuit of the invention；
Fig. 6 is the schematic diagram of the step 2 of OLED pixel driving method of the invention；
Fig. 7 is the schematic diagram of the step 3 of OLED pixel driving method of the invention；
Fig. 8 is the schematic diagram of the step 4 of OLED pixel driving method of the invention.
[specific embodiment]
The explanation of following embodiment is to can be used to the particular implementation of implementation to illustrate the present invention with reference to additional schema
Example.The direction term that the present invention is previously mentioned, such as "upper", "lower", "front", "rear", "left", "right", "inner", "outside", " side "
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is to be given the same reference numerals in the figure.
Aiming at the problem that driving thin film transistor (TFT) threshold voltage shift, can generally electricity be driven to OLED pixel in the prior art
Road improves, and increases thin film transistor (TFT) and controls signal accordingly, is mended with the threshold voltage to driving thin film transistor (TFT)
It repays, makes Organic Light Emitting Diode when luminous, the electric current for flowing through it is unrelated with the driving threshold voltage of thin film transistor (TFT).
As shown in Fig. 2, a kind of existing OLED pixel driving circuit uses the structure namely eight thin film transistor (TFT)s of 8T1C
Add the structure of a capacitor, including first film transistor T31, the second thin film transistor (TFT) T32, third thin film transistor (TFT) T33,
It is four thin film transistor (TFT) T34, the 5th thin film transistor (TFT) T35, the 6th thin film transistor (TFT) T36, the 7th thin film transistor (TFT) T37, the 8th thin
Film transistor T38, capacitor C30 and Organic Light Emitting Diode D30, the connection type of specific each element are as follows: first film transistor
The grid of T31 accesses scanning signal S2, and source electrode accesses reference voltage Vref, and drain electrode is electrically connected one end and the of capacitor C30
The source electrode of seven thin film transistor (TFT) T37, the other end of capacitor C30 and the source electrode of third thin film transistor (TFT) T33 and the 5th film are brilliant
The grid of body pipe T35 connects, the source electrode and second of the 4th thin film transistor (TFT) T34 of drain electrode connection of third thin film transistor (TFT) T33
The grid of the drain electrode of thin film transistor (TFT) T32, third thin film transistor (TFT) T33 and the 4th thin film transistor (TFT) T34 all access scanning signal
S2.The grid of second thin film transistor (TFT) T32 accesses scanning signal S1, and the source electrode of the second thin film transistor (TFT) T32 accesses initial voltage
Vini。
The drain electrode of the 5th thin film transistor (TFT) T35 of drain electrode connection of 4th thin film transistor (TFT) T34 and Organic Light Emitting Diode D30
Anode, the cathode of Organic Light Emitting Diode D30 accesses power supply negative voltage VSS, the source electrode connection of the 5th thin film transistor (TFT) T35 the
The drain electrode of eight thin film transistor (TFT) T38 and the drain electrode of the 7th thin film transistor (TFT) T37, the source electrode of the 7th thin film transistor (TFT) T37 and
The drain electrode of six thin film transistor (TFT) T36 connects, and the source electrode of the 6th thin film transistor (TFT) T36 accesses power supply positive voltage VDD, and the 6th film is brilliant
The grid of body pipe T36 and the grid of the 7th thin film transistor (TFT) T37 all access scanning signal S3, the grid of the 8th thin film transistor (TFT) T38
Scanning signal S2 is accessed in pole, and the source electrode of the 8th thin film transistor (TFT) T38 accesses data voltage Vdata.
Although the framework of above-mentioned 8T1C can eliminate the Vth of driving TFT, the quantity of TFT used is more, can reduce panel
Aperture opening ratio, to reduce display brightness, and the problems such as more TFT can also generate parasitic capacitance.On the other hand, which needs
Two additional power supplies Vref and Vini are wanted, cause hardware configuration more complex.
As shown in figure 3, existing another kind OLED pixel driving circuit uses the structure namely seven film crystals of 7T1C
The structure of Guan Jiayi capacitor, including first film transistor T21, the second thin film transistor (TFT) T22, third thin film transistor (TFT) T23,
4th thin film transistor (TFT) T24, the 5th thin film transistor (TFT) T25, the 6th thin film transistor (TFT) T26, the 7th thin film transistor (TFT) T27, capacitor
C20 and Organic Light Emitting Diode D20, the connection type of specific each element are as follows: power supply positive voltage is accessed in one end of capacitor C20
The other end of ELVDD, capacitor C20 connect second node b, and the grid of the 7th thin film transistor (TFT) T27 accesses luminous signal En, source electrode
Power supply positive voltage ELVDD is accessed, the grid of drain electrode connection first node a, first film transistor T21 access second node b, source
Pole connects first node a, and the grid of drain electrode connection third node c, third thin film transistor (TFT) T23 access the first scanning signal Sn,
Source electrode connects second node b, and the grid of drain electrode connection third node c, the 4th thin film transistor (TFT) T24 access luminous signal En, source
Pole connects third node c, and the anode of drain electrode connection fourth node d, Organic Light Emitting Diode D20 connect fourth node d, You Jifa
The cathode of optical diode D20 accesses power supply negative voltage ELVSS, and the grid of the 5th thin film transistor (TFT) T25 accesses the second scanning signal
Sn-1, drain electrode connection second node b, source electrode connect power supply negative voltage ELVSS, the grid access the of the 6th thin film transistor (TFT) T26
Two scanning signal Sn-1, drain electrode connection fourth node d, source electrode connect power supply negative voltage ELVSS, the second thin film transistor (TFT) T22's
Grid accesses the first scanning signal Sn, and source electrode accesses input data signal Dm, drain electrode connection first node a.
Although the compensation framework of above-mentioned 7T1C can eliminate the Vth of driving TFT, the quantity of TFT used is more, will lead to
The aperture opening ratio of panel declines, to reduce display brightness, and the problems such as greater number of TFT can generate other parasitic capacitances.
Referring to figure 4., Fig. 4 is the circuit diagram of OLED pixel driving circuit of the invention.
As shown in figure 4, OLED pixel driving circuit of the invention includes first film transistor T1, the second thin film transistor (TFT)
T2, third thin film transistor (TFT) T3, the 4th thin film transistor (TFT) T4, the 5th thin film transistor (TFT) T5, the 6th thin film transistor (TFT) T6, capacitor C
And Organic Light Emitting Diode D1.Wherein the first film transistor T1 is driving thin film transistor (TFT), and the 6th film is brilliant
Body pipe T6 is switching thin-film transistor.
The connection type of specific each element is as follows: the grid of the 5th thin film transistor (TFT) T5 accesses the 4th scanning signal
The source electrode of S4, the 5th thin film transistor (TFT) T5 access power supply positive voltage OVDD, the drain electrode point of the 5th thin film transistor (TFT) T5
It is not connect with the source electrode of the drain electrode of the third thin film transistor (TFT) T3 and the first film transistor T1.
The grid of the third thin film transistor (TFT) T3 accesses the second scanning signal S2, the source of the third thin film transistor (TFT) T3
The source electrode of pole and the 4th thin film transistor (TFT) T4 all access data voltage Vdata or initialization voltage Vini；Described 4th
The grid of thin film transistor (TFT) T4 accesses third scanning signal S3.Wherein in the initial phase, the third thin film transistor (TFT)
The source electrode of the source electrode of T3 and the 4th thin film transistor (TFT) T4 all access the initialization voltage；
In the threshold voltage memory phase and the luminescence display stage, the source electrode of the third thin film transistor (TFT) T3 and
The source electrode of the 4th thin film transistor (TFT) T4 all accesses the data voltage.
The grid of the first film transistor T1 source electrode and the electricity with the second thin film transistor (TFT) T2 respectively
Hold one end connection of C, the other end ground connection of the capacitor C.
The grid of the second thin film transistor (TFT) T2 accesses the first scanning signal S1, the leakage of the second thin film transistor (TFT) T2
The drain electrode of pole and the first film transistor T1, the drain electrode of the 4th thin film transistor (TFT) T4 and the 6th film crystal
The drain electrode of pipe T6 connects.
The grid of the 6th thin film transistor (TFT) T6 accesses the 4th scanning signal S4, the source of the 6th thin film transistor (TFT) T6
Pole is connect with the anode of the Organic Light Emitting Diode D1, and the cathode of the Organic Light Emitting Diode D1 accesses power supply negative voltage
OVSS。
The first film transistor T1, the second thin film transistor (TFT) T2, third thin film transistor (TFT) T3, the 4th thin film transistor (TFT)
T4, the 5th thin film transistor (TFT) T5 and the 6th thin film transistor (TFT) T6 are low-temperature polysilicon film transistor, oxide semiconductor
One of thin film transistor (TFT) and amorphous silicon film transistor.
The first scanning signal S1, the second scanning signal S2, third scanning signal S3 and the 4th scanning signal S4 are equal
It is generated by external sequence controller.
The first film transistor T1, the second thin film transistor (TFT) T2, third thin film transistor (TFT) T3, the 4th thin film transistor (TFT)
T4, the 5th thin film transistor (TFT) T5 and the 6th thin film transistor (TFT) T6 are P-type TFT.
The first scanning signal S1, the second scanning signal S2, third scanning signal S3 and the 4th scanning signal S4 phase
Combination successively corresponds to an initial phase, a threshold voltage memory phase and a luminescence display stage.
Based on above-mentioned OLED pixel driving circuit, the present invention also provides a kind of OLED pixel driving methods, including walk as follows
It is rapid:
S101, an OLED pixel driving circuit is provided.
Referring specifically to Fig. 4 and above, details are not described herein.
S102, into initial phase.
In conjunction with Figures 5 and 6, in the initial phase namely t0-t1 period, the first scanning signal S1 and the third
Scanning signal S3 is low potential, and the second scanning signal S2 and the 4th scanning signal S4 are high potential.
The first scanning signal S1 provides low potential, and the second thin film transistor (TFT) T2 is opened；The third scanning letter
Number S3 provides low potential, and the 4th thin film transistor (TFT) T4 is opened；The second scanning signal S2 provides high potential, the third
Thin film transistor (TFT) T3 is closed；The 4th scanning signal S4 provides high potential, and described five, the 6th thin film transistor (TFT) T5, T6 are closed
It closes.
Since described second, the 4th thin film transistor (TFT) T2, T4 is opened, Vini is by T2, T4 to the first film crystal
The grid (g point) of pipe T1 charges, so that the voltage Vg of the grid of the first film transistor T1 is equal to initial voltage
The initial voltage Vini of Vini, data line output meet following formula:
Vini<Vdata-Vth；
Since the 6th thin film transistor (TFT) T6 is closed, Organic Light Emitting Diode D1 does not shine, this stage completes to g point electricity
The initialization of position.
S103, into threshold voltage memory phase.
In conjunction with Fig. 5 and 7, in the threshold voltage memory phase namely t1-t2 period, the first scanning signal S1 and described
Second scanning signal S2 is low potential, and the third scanning signal S3 and the 4th scanning signal S4 are high potential.
The first scanning signal S1 provides low potential, and the second thin film transistor (TFT) T2 is opened；The second scanning letter
Number S2 provides low potential, and the third thin film transistor (TFT) T3 is opened；The third scanning signal S3 offer high potential, the described 4th
Thin film transistor (TFT) T4 is closed；The 4th scanning signal S4 provides high potential, and described five, the 6th thin film transistor (TFT) T5, T6 are closed
It closes.
Since the third thin film transistor (TFT) T3 is opened, Vdata is by T3 to the source electrode of the first film transistor T1
(s point) charges, so that the voltage Vs of the source electrode of the first film transistor T1 is equal to data voltage Vdata.Due to
Two thin film transistor (TFT) T2 are opened, and the four, the six film crystal T4, T6 are closed, and g point current potential is charged by T2, T1, T3, until s
Cramping between point and g point is to end when driving the threshold voltage vt h of thin film transistor (TFT) (T1).
Due to meeting following formula between Vs and Vg:
Vs-Vg=Vth；
Wherein Vs=Vdata；
In conjunction with above formula, then there is Vg are as follows:
Vg=Vdata-Vth.
Namely the voltage change of the grid of the first film transistor T1, to Vdata-Vth, wherein Vdata is data electricity
Pressure, Vth are the threshold voltage of the first film transistor T1.
Since the 6th thin film transistor (TFT) T6 is closed, Organic Light Emitting Diode D1 does not shine.This stage completes to g point electricity
The storage of position.
S104, into the luminescence display stage.
In conjunction with Fig. 5 and 8, in luminescence display stage namely t2-t3 period, the first scanning signal S1, described second are swept
Retouching signal S2 and the third scanning signal S3 is all high potential, and the 4th scanning signal S4 is low potential.
The first scanning signal S1 provides high potential, and the second thin film transistor (TFT) T2 is closed；The second scanning letter
Number S2 provides high potential, and the third thin film transistor (TFT) T3 is closed；The third scanning signal S3 offer high potential, the described 4th
Thin film transistor (TFT) T4 is closed；The 4th scanning signal S4 provides low potential, and described five, the 6th thin film transistor (TFT) T5, T6 are beaten
It opens.Since the five, the six thin film transistor (TFT) T5, T6 are opened, the Organic Light Emitting Diode D1 shines, and flows through the organic light emission
The electric current of diode D1 is unrelated with the threshold voltage of the first film transistor T1.
Specifically, since the second thin film transistor (TFT) T2 is closed, the grid of g point current potential namely the first film transistor T1
Voltage Vg remain unchanged, namely consistent with voltage when threshold voltage memory phase, Vg is as follows:
Vg=Vdata-Vth；
Since third thin film transistor (TFT) T3 is closed, the 5th thin film transistor (TFT) T5 is opened, and OVDD is by T5 to the first film crystalline substance
The source electrode of body pipe T1 charges, so that s point current potential Vs becomes as follows:
Vs=OVDD；
Cramping Vsg between s point and g point, becomes as follows at this time:
Vsg=Vs-Vg=OVDD-(Vdata-Vth)=OVDD-Vdata+Vth；
Since the electric current for flowing through Organic Light Emitting Diode D1 meets:
I=k (Vsg-Vth)2
In conjunction with above formula, the electric current of Organic Light Emitting Diode D1 is finally flowed through are as follows:
I=k (OVDD-Vdata)2
It can be seen that flowing through the electric current of Organic Light Emitting Diode D1 and the threshold voltage vt h of driving thin film transistor (TFT) (T1)
It is unrelated, influence of the threshold voltage vt h to Organic Light Emitting Diode is eliminated, to improve the uniformity of Display panel and shine
Efficiency.
OLED pixel driving circuit of the invention and image element driving method, by changing to existing pixel-driving circuit
Into it is equal to improve Display panel to eliminate influence of the threshold voltage to Organic Light Emitting Diode of driving thin film transistor (TFT)
Even property, the problems such as furthermore also avoiding brightness reduction, the luminous efficiency decline that panel occurs with the aging of OLED device.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of OLED pixel driving circuit characterized by comprising
First film transistor, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th film crystal
Pipe, the 6th thin film transistor (TFT), capacitor and Organic Light Emitting Diode；
The grid of 5th thin film transistor (TFT) accesses the 4th scanning signal, and the source electrode of the 5th thin film transistor (TFT) accesses power supply
Positive voltage, the 5th thin film transistor (TFT) drain electrode respectively with the drain electrode of the third thin film transistor (TFT) and the first film
The source electrode of transistor connects；
The grid of the third thin film transistor (TFT) accesses the second scanning signal, the source electrode of the third thin film transistor (TFT) and described the
The source electrode of four thin film transistor (TFT)s all accesses data voltage or initialization voltage；The grid access the of 4th thin film transistor (TFT)
Three scanning signals；
The grid of first film transistor one end with the source electrode of second thin film transistor (TFT) and the capacitor respectively
Connection, the other end ground connection of the capacitor；
The grid of second thin film transistor (TFT) accesses the first scanning signal, the drain electrode of second thin film transistor (TFT) respectively with institute
The drain electrode of first film transistor, the drain electrode of the 4th thin film transistor (TFT) and the drain electrode of the 6th thin film transistor (TFT) is stated to connect
It connects；
The grid of 6th thin film transistor (TFT) accesses the 4th scanning signal, and the source electrode of the 6th thin film transistor (TFT) has with described
The anode of machine light emitting diode connects, and the cathode of the Organic Light Emitting Diode accesses power supply negative voltage.
2. OLED pixel driving circuit as described in claim 1, which is characterized in that the first film transistor, described
Two thin film transistor (TFT)s, the third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT) and described
6th thin film transistor (TFT) is that low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor and amorphous silicon membrane are brilliant
One of body pipe.
3. OLED pixel driving circuit as described in claim 1, which is characterized in that the first film transistor, described
Two thin film transistor (TFT)s, the third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT) and described
6th thin film transistor (TFT) is P-type TFT.
4. OLED pixel driving circuit as claimed in claim 3, which is characterized in that first scanning signal, described second
Scanning signal, the third scanning signal and the 4th scanning signal are combined, and successively correspond to initial phase, threshold value
Voltage memory phase and luminescence display stage；
In the initial phase, first scanning signal and the third scanning signal are all low potential, and described second sweeps
It retouches signal and the 4th scanning signal is high potential；
In the threshold voltage memory phase, first scanning signal and second scanning signal are all low potential, described
Third scanning signal and the 4th scanning signal are all high potential；
In the luminescence display stage, first scanning signal, second scanning signal and the third scanning signal
It is all high potential, the 4th scanning signal is low potential.
5. OLED pixel driving circuit as claimed in claim 4, which is characterized in that in the initial phase, the third
The source electrode of the source electrode of thin film transistor (TFT) and the 4th thin film transistor (TFT) all accesses the initialization voltage；
In threshold voltage memory phase and the luminescence display stage, the source electrode of the third thin film transistor (TFT) and described 4th thin
The source electrode of film transistor all accesses the data voltage.
6. a kind of OLED pixel driving method, which comprises the steps of:
OLED pixel driving circuit is provided；
Into initial phase；
Into threshold voltage memory phase；And
Into the luminescence display stage；
Wherein the OLED pixel driving circuit includes:
First film transistor, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th film crystal
Pipe, the 6th thin film transistor (TFT), capacitor and Organic Light Emitting Diode；
The grid of 5th thin film transistor (TFT) accesses the 4th scanning signal, and the source electrode of the 5th thin film transistor (TFT) accesses power supply
Positive voltage, the 5th thin film transistor (TFT) drain electrode respectively with the drain electrode of the third thin film transistor (TFT) and the first film
The source electrode of transistor connects；
The grid of the third thin film transistor (TFT) accesses the second scanning signal, the source electrode of the third thin film transistor (TFT) and described the
The source electrode of four thin film transistor (TFT)s all accesses data voltage or initialization voltage；The grid access the of 4th thin film transistor (TFT)
Three scanning signals；
The grid of first film transistor one end with the source electrode of second thin film transistor (TFT) and the capacitor respectively
Connection, the other end ground connection of the capacitor；
The grid of second thin film transistor (TFT) accesses the first scanning signal, the drain electrode of second thin film transistor (TFT) respectively with institute
The drain electrode of first film transistor, the drain electrode of the 4th thin film transistor (TFT) and the drain electrode of the 6th thin film transistor (TFT) is stated to connect
It connects；
The grid of 6th thin film transistor (TFT) accesses the 4th scanning signal, and the source electrode of the 6th thin film transistor (TFT) has with described
The anode of machine light emitting diode connects, and the cathode of the Organic Light Emitting Diode accesses power supply negative voltage；
In the initial phase, first scanning signal provides low potential, and second thin film transistor (TFT) is opened；Described
Three scanning signals provide low potential, and the 4th thin film transistor (TFT) is opened；Second scanning signal provides high potential, and described the
Three thin film transistor (TFT)s are closed；4th scanning signal provides high potential, and the five, the 6th thin film transistor (TFT) is closed；It is described
The voltage of the grid of first film transistor is equal to initial voltage；
In threshold voltage memory phase, first scanning signal provides low potential, and second thin film transistor (TFT) is opened；It is described
Second scanning signal provides low potential, and the third thin film transistor (TFT) is opened；The third scanning signal provides high potential, described
4th thin film transistor (TFT) is closed；4th scanning signal provides high potential, and the five, the 6th thin film transistor (TFT) is closed；Institute
The voltage for stating the source electrode of first film transistor is equal to the data voltage, and the voltage of the grid of the first film transistor becomes
Change to Vdata-Vth, wherein Vdata is data voltage, and Vth is the threshold voltage of the first film transistor；
In the luminescence display stage, first scanning signal provides high potential, and second thin film transistor (TFT) is closed；It is described
Second scanning signal provides high potential, and the third thin film transistor (TFT) is closed；The third scanning signal provides high potential, described
4th thin film transistor (TFT) is closed；4th scanning signal provides low potential, and the five, the 6th thin film transistor (TFT) is opened；Institute
Organic light-emitting diode is stated, and flows through the electric current of the Organic Light Emitting Diode and the threshold value of the first film transistor
Voltage is unrelated.
7. OLED pixel driving method as claimed in claim 6, which is characterized in that in the luminescence display stage, described
The voltage change of the source electrode of one thin film transistor (TFT) to power supply positive voltage, the voltage of the grid of the first film transistor is kept not
Become, it is unrelated with the threshold voltage of the first film transistor with the electric current for flowing through the Organic Light Emitting Diode.
8. OLED pixel driving method as claimed in claim 6, which is characterized in that in the initial phase, the third
The source electrode of the source electrode of thin film transistor (TFT) and the 4th thin film transistor (TFT) all accesses the initialization voltage；
In the threshold voltage memory phase and the luminescence display stage, the source electrode of the third thin film transistor (TFT) and described
The source electrode of four thin film transistor (TFT)s all accesses the data voltage.
9. OLED pixel driving method as claimed in claim 6, which is characterized in that first scanning signal, described second
Scanning signal, the third scanning signal and the 4th scanning signal pass through external sequence controller and generate.
10. OLED pixel driving method as claimed in claim 6, which is characterized in that the first film transistor is driving
Thin film transistor (TFT), the 6th thin film transistor (TFT) are switching thin-film transistor.
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| CN201710699755.9A CN107331352B (en) | 2017-08-16 | 2017-08-16 | A kind of OLED pixel driving circuit and image element driving method |
| PCT/CN2017/107966 WO2019033558A1 (en) | 2017-08-16 | 2017-10-27 | Oled pixel driver circuit and pixel drive method |
| US15/574,027 US10192488B1 (en) | 2011-08-16 | 2017-10-27 | OLED pixel driving circuit and OLED pixel driving method |
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| CN108288457A (en) * | 2018-01-19 | 2018-07-17 | 昆山国显光电有限公司 | Pixel circuit and its driving method, display device |
| CN110459186A (en) * | 2019-07-26 | 2019-11-15 | 福建华佳彩有限公司 | A kind of pixel shows structure and panel |
| CN112331149A (en) * | 2020-10-27 | 2021-02-05 | 福建华佳彩有限公司 | Grid circuit and driving method |
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| CN103187024A (en) * | 2011-12-28 | 2013-07-03 | 群康科技(深圳)有限公司 | Pixel circuit, display device and driving method |
| CN103996379A (en) * | 2014-06-16 | 2014-08-20 | 深圳市华星光电技术有限公司 | Pixel driving circuit and method for organic light emitting diode |
| CN106448557A (en) * | 2016-12-26 | 2017-02-22 | 深圳市华星光电技术有限公司 | Lighting driver circuit and organic light emitting display |
| CN106504702A (en) * | 2016-10-18 | 2017-03-15 | 深圳市华星光电技术有限公司 | AMOLED pixel-driving circuits and driving method |
| CN106558287A (en) * | 2017-01-25 | 2017-04-05 | 上海天马有机发光显示技术有限公司 | Organic light emissive pixels drive circuit, driving method and organic electroluminescence display panel |
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| KR101993400B1 (en) * | 2012-10-10 | 2019-10-01 | 삼성디스플레이 주식회사 | Organic Light Emitting Display Device and Driving Method Thereof |
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| CN103187024A (en) * | 2011-12-28 | 2013-07-03 | 群康科技(深圳)有限公司 | Pixel circuit, display device and driving method |
| CN103996379A (en) * | 2014-06-16 | 2014-08-20 | 深圳市华星光电技术有限公司 | Pixel driving circuit and method for organic light emitting diode |
| CN106504702A (en) * | 2016-10-18 | 2017-03-15 | 深圳市华星光电技术有限公司 | AMOLED pixel-driving circuits and driving method |
| CN106448557A (en) * | 2016-12-26 | 2017-02-22 | 深圳市华星光电技术有限公司 | Lighting driver circuit and organic light emitting display |
| CN106558287A (en) * | 2017-01-25 | 2017-04-05 | 上海天马有机发光显示技术有限公司 | Organic light emissive pixels drive circuit, driving method and organic electroluminescence display panel |
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