CN106492613B - Tail gas processor for epitaxial process - Google Patents
Tail gas processor for epitaxial process Download PDFInfo
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- CN106492613B CN106492613B CN201611131217.1A CN201611131217A CN106492613B CN 106492613 B CN106492613 B CN 106492613B CN 201611131217 A CN201611131217 A CN 201611131217A CN 106492613 B CN106492613 B CN 106492613B
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- 238000000034 method Methods 0.000 title claims abstract description 41
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 156
- 239000007789 gas Substances 0.000 claims abstract description 112
- 239000007921 spray Substances 0.000 claims abstract description 83
- 239000007788 liquid Substances 0.000 claims abstract description 69
- 238000003860 storage Methods 0.000 claims abstract description 36
- 239000002912 waste gas Substances 0.000 claims abstract description 26
- 238000005406 washing Methods 0.000 claims abstract description 16
- 238000004891 communication Methods 0.000 claims abstract 2
- 239000013078 crystal Substances 0.000 claims description 21
- 239000002253 acid Substances 0.000 claims description 12
- 238000005507 spraying Methods 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 9
- 238000007790 scraping Methods 0.000 claims description 7
- 238000011010 flushing procedure Methods 0.000 claims description 6
- 238000012856 packing Methods 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 5
- 238000004090 dissolution Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 239000000945 filler Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 230000001502 supplementing effect Effects 0.000 description 7
- 238000000407 epitaxy Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000007667 floating Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000008399 tap water Substances 0.000 description 2
- 235000020679 tap water Nutrition 0.000 description 2
- 239000002351 wastewater Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 208000034699 Vitreous floaters Diseases 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/77—Liquid phase processes
- B01D53/78—Liquid phase processes with gas-liquid contact
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
- B01D53/68—Halogens or halogen compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2257/00—Components to be removed
- B01D2257/20—Halogens or halogen compounds
- B01D2257/204—Inorganic halogen compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2257/00—Components to be removed
- B01D2257/20—Halogens or halogen compounds
- B01D2257/204—Inorganic halogen compounds
- B01D2257/2045—Hydrochloric acid
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Biomedical Technology (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Treating Waste Gases (AREA)
Abstract
The invention discloses a tail gas processor of an epitaxial process, which comprises a water storage tank (10), a jet spray tower (1) communicated with the water storage tank (10) and used for absorbing waste gas, and a negative pressure generator (23) connected with an exhaust port of the jet spray tower (1), wherein a negative pressure cavity (25) is formed in a region communicated with the front of the negative pressure generator (23), a normal pressure cavity (26) is formed in a region communicated with the rear of the negative pressure generator (23), a water inlet (19) for introducing continuous water flow is formed in the water storage tank (10), and the negative pressure cavity (25) is communicated with liquid in the normal pressure cavity (26); the device also comprises an overflow box (8) which is in a normal pressure state and is in liquid communication with the negative pressure cavity (25), and turbid liquid in the overflow box (8) is discharged from the overflow port (9). The tail gas processor of the epitaxial process effectively solves the problem that a common water-washing type tail gas washing tower cannot treat tail gas well.
Description
Technical Field
The invention relates to the technical field of tail gas treatment equipment, in particular to a tail gas processor of an epitaxial process.
Background
A large amount of TCS (the chemical formula is SiHCl) is used in an epitaxial furnace EPI for manufacturing semiconductor silicon wafers 3 )、HCl、H 2 And a pH at ppm concentration level 3 Or B is a 2 H 6 Equal gas, actual reaction rate of process<20%, a large amount of TCS gas is discharged out of the reaction cavity of the epitaxial furnace as process tail gas, and the toxic and harmful gas can be discharged into the atmosphere after reaching the standard through a proper tail gas processor. SiO is generated due to the reaction of TCS and water 2 Granular crystals, HCl gas and the like, and HCl can be dissolved in water and is effectively absorbed and treated; adding H 2 Can be directly emptied without any treatment, and has very small PH 3 Or B is a 2 H 6 Etc. pass through H in the tail gas processor 2 Below the TLV value after dilution, the air can be directly vented without special handling.
In the prior art, a common water-washing type tail gas washing tower is adopted, and waste gas is absorbed by water reaction when passing through packing such as pall rings and the like which are leached by the water.
However, a large amount of SiO is produced in this process 2 White crystal, which needs to be cleaned once in 1-3 days, siO is cleaned 2 The white crystal is removed cleanly, otherwise, the filler is stuck and blocked, and the tail gas processor cannot work; the air inlet is easy to be blocked, and due to the steam, the SiO generated in the tail gas air inlet due to the reaction of TCS and the steam 2 Is not covered with waterFlushing, namely directly adhering to the inner wall of the air inlet; the water consumption is high, a large amount of water supplementing and draining are needed for removing the white crystal floating on the water surface in the water tank of the device, and the white crystal is drained to the drainage device along with the draining; the negative pressure regulation is unstable and cannot respond quickly along with the change of air flow, and the atmospheric EPI epitaxial furnace needs to use an exhaust treatment system to accurately control the negative pressure, and simultaneously meets the requirement that the negative pressure needs to be regulated quickly to a set negative pressure value when the exhaust amount is changed; at present, a centrifugal fan negative pressure pumping mode is arranged at the rear end of a tail gas processor, and the centrifugal fan has weak capability of regulating stable negative pressure along with the change of air inflow due to large air pumping quantity;
in summary, how to effectively solve the problem that the common water-washing type tail gas washing tower cannot well treat the tail gas is a problem that needs to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to provide a tail gas processor for an epitaxial process, which effectively solves the problem that a common water-washing type tail gas washing tower cannot treat tail gas well.
In order to solve the technical problems, the invention provides the following technical scheme:
the tail gas processor of the epitaxial process comprises a water storage tank, a jet spray tower and a negative pressure generator, wherein the jet spray tower is communicated with the water storage tank and is used for absorbing waste gas, the negative pressure generator is connected with an exhaust port of the jet spray tower, a negative pressure cavity is formed in a region communicated with the front of the negative pressure generator, a normal pressure cavity is formed in a region communicated with the rear of the negative pressure generator, a water inlet for continuous water flow is formed in the water storage tank, and the negative pressure cavity is communicated with liquid in the normal pressure cavity; the device also comprises an overflow box which is in a normal pressure state and is communicated with the liquid in the negative pressure cavity, and turbid liquid in the overflow box is discharged from the overflow port.
Preferably, the negative pressure generator comprises a jet device for jetting liquid and jetting the liquid into the normal pressure cavity after converging the liquid and tail gas of the exhaust port, and the normal pressure cavity is provided with a purified gas outlet for discharging purified gas after gas-liquid separation.
Preferably, the device also comprises an air inlet tower, the bottom end of which is communicated with the water storage tank and is used for carrying out primary water washing dissolution on the waste gas;
the middle spray tower is communicated between the air inlet tower and the jet spray tower and used for absorbing acid gas through dispersed water, and the bottom end of the middle spray tower is communicated with the water storage tank;
the cylinder body of the jet spray tower is immersed below the water surface in the water storage tank.
Preferably, the middle spray tower and the jet spray tower are internally provided with at least two layers of nozzle spray devices, and a packing layer is arranged below each layer of nozzle spray devices;
water flow nozzles are arranged on the communicating pipes between the middle spray tower and the communicating pipes between the middle spray tower and the jet spray tower;
and the side walls of the middle spray tower and the jet spray tower are provided with observation overhauling holes.
Preferably, the top end of the air inlet tower is provided with an air inlet cylinder, and the air inlet cylinder is provided with an exhaust air inlet and a protective gas inlet;
the top of the air inlet cylinder is provided with a rotating shaft which is the same as the axial direction of the air inlet cylinder, a scraping plate which can remove crystals adhered to the inner wall of the air inlet cylinder is fixed on the rotating shaft, and a gap is formed between the scraping plate and the inner wall of the air inlet cylinder.
Preferably, the lower part of the air inlet cylinder is connected with a flange, an annular gap is formed between the edge of the flange and the inner wall of the air inlet tower, and a liquid inlet of the air inlet tower is arranged above the flange.
Preferably, the liquid inlet of the air inlet tower, the nozzle spray device and the water flow nozzle are all communicated with a spray pump, and the inlet of the spray pump is communicated with the liquid of the negative pressure cavity.
Preferably, a venturi mixed flow nozzle for scattering and uniformly mixing the crystal floating objects formed on the water surface with water is arranged at the water surface position of the negative pressure cavity.
Preferably, the water inlet is arranged on the water storage tank at the normal pressure cavity, an overflow pipe is arranged in the overflow box, and turbid liquid in the overflow box is discharged from an overflow port of the overflow pipe;
the top of the overflow box is provided with a flushing spray head which is communicated with the liquid of the normal pressure cavity;
the upper part of the overflow box is provided with a normal pressure port communicated with the atmosphere.
Preferably, a pressure sensor is arranged in the negative pressure cavity, the pressure sensor is connected with a variable frequency control box, the variable frequency control box is connected with a variable frequency pump, and the variable frequency pump is connected with the ejector;
the variable frequency control box is also connected with a liquid level switch, and the liquid level switch is positioned in the negative pressure cavity and can measure the liquid height in the negative pressure cavity.
The tail gas processor of the epitaxial process provided by the invention comprises a water storage tank, a jet spray tower, a negative pressure generator and an overflow box, wherein water is arranged in the water storage tank, and a jet spray tower cylinder body is immersed below the water surface in the water storage tank and is used for absorbing waste gas through high-speed rotation water flow, and a large amount of dispersed water fully absorbs the waste gas. The negative pressure generator is connected with the exhaust port of the jet spray tower and is used for generating negative pressure, the tail gas processor of the epitaxy process is provided with two cavities, a negative pressure cavity and a normal pressure cavity, the communicated area before the negative pressure generator forms the negative pressure cavity, and the communicated area after the negative pressure generator forms the normal pressure cavity. The water storage tank is provided with a water inlet, continuous water flow is introduced into the water inlet, and the negative pressure cavity is communicated with liquid in the normal pressure cavity. The overflow box is in normal pressure state, the liquid supplementing port is communicated with the liquid in the negative pressure cavity, the turbid liquid in the overflow box is discharged from the overflow port, and the turbid liquid is mainly SiO 2 White crystals.
The tail gas processor of the epitaxial process provided by the invention is a stable negative pressure device, is favorable for stable production, and adopts city tap water as a water solvent, and the tail gas is contacted with the gas-liquid two phases to realize the processes of mixing, dissolving and the like of the gas-liquid two phases so as to meet the gas purification and absorption requirements. SiO produced 2 The white crystal is effectively and evenly mixed with water, is discharged along with an overflow port of an overflow box, and is stoppedThe cleaning frequency is reduced, the filler is not easy to be stuck and blocked, the shutdown is carried out for one time after more than 60 days, and the SiO is cleaned 2 The white crystal is removed completely, and the working efficiency of the tail gas processor is improved; siO (SiO) 2 The white crystal is effectively and uniformly mixed with water, so that a large amount of water supplementing and draining are not needed when the white crystal floating on the water surface is removed, the water consumption is low, and the water saving property is good; simple structure, easy maintenance and low cost.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of an exhaust gas treatment device for an epitaxy process according to an embodiment of the present invention;
fig. 2 is a schematic diagram of the working principle of fig. 1.
The figures are marked as follows:
1-jet spray tower, 2-air inlet tower, 3-scraper blade, 4-tail gas air inlet, 5-middle spray tower, 6-nozzle spray device, 7-pressure sensor, 8-overflow box, 9-overflow port, 10-storage water tank, 11-filter, 12-outlet, 13-drain valve, 14-variable frequency pump, 15-spray pump, 16-venturi mixed flow nozzle, 17-liquid level switch, 18-variable frequency pump flowmeter, 19-water inlet, 20-water inlet valve, 21-purified gas outlet, 22-water inlet flowmeter, 23-negative pressure generator, 24-protective gas air inlet, 25-negative pressure cavity, 26-normal pressure cavity, 27-control box, 28-flushing spray header.
Detailed Description
The invention aims at providing a tail gas processor of an epitaxial process, which effectively solves the problem that a common water-washing type tail gas washing tower cannot treat tail gas well.
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1 and fig. 2, fig. 1 is a schematic structural diagram of an exhaust gas treatment device for an epitaxy process according to an embodiment of the present invention; fig. 2 is a schematic diagram of the working principle of fig. 1.
In a specific embodiment, the tail gas processor of the epitaxial process provided by the invention comprises a water storage tank 10, a jet spray tower 1, a negative pressure generator 23 and an overflow tank 8, wherein water is arranged in the water storage tank 10, the jet spray tower 1 is communicated with the water storage tank 10 and is used for absorbing waste gas through high-speed rotation water flow, and a large amount of dispersed water is fully absorbed on the waste gas. The negative pressure generator 23 is connected with the exhaust port of the jet spray tower 1 and is used for generating negative pressure, the tail gas processor of the epitaxy process is provided with two cavities, namely a negative pressure cavity 25 and a normal pressure cavity 26, the communicated area before the negative pressure generator 23 forms the negative pressure cavity 25, and the communicated area after the negative pressure generator 23 forms the normal pressure cavity 26. The water storage tank 10 is provided with a water inlet 19, a water inlet valve 20 is arranged at the water inlet 19 to control the on-off of the water inlet 19, and a water inlet flowmeter 22 is also arranged to obtain the water inflow. The water inlet 19 is filled with continuous water flow, and the negative pressure cavity 25 is communicated with liquid in the normal pressure cavity 26. The overflow box 8 is in a normal pressure state, the liquid supplementing port of the overflow box is communicated with the liquid in the negative pressure cavity 25, turbid liquid in the overflow box 8 is discharged from the overflow port 9, and the turbid liquid is mainly SiO 2 White crystals.
The tail gas processor of the epitaxial process provided by the invention is a stable negative pressure device, is favorable for stable production, and adopts city tap water as a water solvent, and the tail gas is contacted with the gas-liquid two phases to realize the processes of mixing, dissolving and the like of the gas-liquid two phases so as to meet the gas purification and absorption requirements. Through continuous stable water supplementing, not only meets certain water dissolving and absorbing capacity, ensures that equipment is always in a stable treatment state, and simultaneously continuously discharges dissolved SiO through water flow 2 Turbid liquid of particles, si producedO 2 The white crystal is effectively and evenly mixed with water, and is discharged along with an overflow port 9 of an overflow box 8, the shutdown cleaning frequency is reduced, the filler is not easy to be stuck and blocked, the shutdown cleaning is prolonged to more than 60 days for one time, and the SiO is cleaned 2 The white crystal is removed completely, and the working efficiency of the tail gas processor is improved; siO (SiO) 2 The white crystal is effectively and uniformly mixed with water, so that a large amount of water supplementing and draining are not needed when the white crystal floating on the water surface is removed, the water consumption is low, and the water saving property is good; simple structure, easy maintenance and low cost.
Based on the above specific embodiments, a person skilled in the art may change the tail gas processor of the epitaxial process according to different specific occasions, the negative pressure generator 23 includes a jet device, the jet device is used for spraying liquid and converging the sprayed liquid and the tail gas of the exhaust port, and then spraying the liquid into the normal pressure cavity 26, and a water inlet flow meter 22 is also arranged at the water inlet pipeline of the jet device to obtain the water inlet. The normal pressure chamber 26 is provided with a purge gas outlet 21, and the purge gas separated from the gas and the liquid is discharged through the purge gas outlet 21. Specifically, under the high-speed rotation of the pump impeller, liquid is sprayed out of the nozzle at a high speed, when the liquid flowing at a high speed passes through the gas mixing chamber, vacuum is formed in the gas mixing chamber, a large amount of gas is sucked into the gas mixing chamber through the gas guide pipe, and the gas is vigorously mixed with the liquid at the throat after entering the gas mixing chamber to form a gas-liquid mixture, and is discharged through the diffusion pipe, so that efficient mass transfer is formed in the whole process, and the gas can be purified. The tail gas processor of the epitaxy process realizes negative pressure control, forms stable negative pressure by utilizing the ejector negative pressure principle, and is beneficial to stable production.
The tail gas processor of the epitaxial process is only a preferred scheme, and particularly but not limited to, the tail gas processor can be adjusted in a targeted manner according to actual needs on the basis, so that different embodiments are obtained, the tail gas processor further comprises an air inlet tower 2, the bottom end of the air inlet tower 2 is communicated with a water storage tank 10 and is used for carrying out primary water washing dissolution on waste gas, acid-containing waste gas enters the air inlet tower 2, the air inlet tower 2 is a first-stage spray tower, and the waste gas is subjected to primary water washing dissolution. The acid gas absorption device further comprises a middle spray tower 5, wherein the middle spray tower 5 is a second-stage spray tower, the middle spray tower 5 is communicated between the air inlet tower 2 and the jet spray tower 1, the bottom end of the middle spray tower 5 is communicated with the water storage tank 10, and acid gas is fully absorbed through a large amount of dispersed water. The jet spray tower 1 is a third-stage spray tower, and absorbs residual acid gas through high-speed rotating water flow. The acid gas after three-stage treatment can reduce the acid concentration from 10% to below 0.5%, so that the emission concentration is lower than the maximum allowable emission concentration value of the atmospheric pollutants specified by the national standard.
Specifically, the acid waste gas enters the gas inlet tower 2 through the tail gas inlet 4, preferably, water enters from the upper half part and flows down to the lower water storage tank 10 from top to bottom, TCS in the tail gas reacts with water when the upper space of the water storage tank 10 passes through a water curtain, and generated SiO 2 The particles are flushed into the water storage tank 10 by a curtain of water. The waste gas enters a middle spray tower 5 from the bottom, the middle spray tower 5 is provided with a nozzle, more than 95 percent of TCS in the waste gas can be removed by the middle spray tower 5, a large amount of umbrella-shaped dispersed water sprayed by the nozzle is not water mist, acid waste gas is fully absorbed and reacted, and the whole pall ring filler area is flushed by falling cover, so that SiO generated by the reaction is reacted 2 Can not adhere to the surface of the filler, and prevents the filler space from being blocked by the adhesion hardening of the crystallized substances. Waste gas enters the jet spray tower 1 through the communicating pipe, has the same structure as the middle spray tower 5 and is provided with a nozzle, so that the flowing process tail gas and water are fully contacted and dissolved, and the harmful gas dissolved in the water in the tail gas is effectively removed. The cylinder of the jet spray tower 1 is immersed below the liquid level in the water storage tank 10 to form a water seal, so that gas is prevented from directly entering the jet spray tower 1 from the air inlet tower 2. The tail gas which is washed and purified is sucked by a negative pressure generating device formed by an ejector from an air outlet at the top of the jet spray tower 1 to form gas-liquid mixture which enters the normal pressure cavity 26, the purified gas is discharged from the normal pressure cavity 26 and is connected to a workshop main pipe to be discharged outdoors.
Based on the specific embodiment, the person skilled in the art can change the tail gas processor of the external process according to different specific occasions, the middle spray tower 5 and the jet spray tower 1 are internally provided with at least two layers of nozzle spray devices 6, a large amount of umbrella-shaped dispersed water sprayed by the nozzle spray devices 6 is not water mist, fully absorbs acid waste gas for reaction, falls to cover and wash the whole pall ring filler area, so that SiO generated by the reaction 2 Can not adhere to the surface of the filler, and prevents the filler space from being blocked by the adhesion hardening of the crystallized substances. The packing layer is arranged below each layer of nozzle spraying device 6, the packing layer can increase the contact area between the waste gas and water, and is fully wetted, so that the waste gas and water fully react and are dissolved in the water, for example, the two layers of packing layers and the two layers of high-flow nozzle spraying devices 6 are not limited, and the specific number of layers is not limited and can be determined according to specific use conditions.
Water flow nozzles are arranged on the communicating pipes between the middle spray tower 5 and the communicating pipes between the middle spray tower 5 and the jet spray tower 1, the water flow nozzles are required to be provided with dispersing water spraying pipelines, the communicating pipes between the middle spray tower 5 and the jet spray tower 1 are flushed, but water columns can not seal pipe orifices, otherwise, unsmooth air flow and unstable negative pressure can be caused.
The side walls of the middle spray tower 5 and the jet spray tower 1 are provided with observation overhauling holes which are transparent and can be used as observation windows, and are maintenance holes for taking out and cleaning fillers.
It should be noted that the tail gas processor of the epitaxial process provided by the invention should not be limited to this case, and the top end of the air inlet tower 2 is provided with an air inlet cylinder, so that the tail gas processor is convenient to clean. The tail gas air inlet 4 and the protective gas air inlet 24 are formed in the air inlet cylinder, the protective gas can be nitrogen, a proper amount of nitrogen is introduced to play a role in inert protection, the concentration of tail gas is diluted, water vapor can be prevented from rising, air in the air inlet tower 2 is replaced, and oxidation reaction of air and waste gas is prevented.
The top of the air inlet cylinder is provided with a rotating shaft which is the same as the axial direction of the air inlet cylinder, a scraping plate 3 which can remove crystals adhered to the inner wall of the air inlet cylinder is fixed on the rotating shaft, a gap is formed between the scraping plate 3 and the inner wall of the air inlet cylinder, and when the air inlet cylinder is in a protective gas state, the air inlet scraping plate 3 is rotated once every week to remove the crystals possibly adhered to an air inlet, the air inlet cylinder is cleaned, and the blocking of an exhaust gas inlet is prevented.
Obviously, under the guidance of the idea, a person skilled in the art can change the embodiment according to specific occasions, and the lower part of the air inlet cylinder is connected with a flange plate and a flangeAn annular gap, such as an annular gap of 3mm, is arranged between the edge of the disc and the inner wall of the air inlet tower 2, the liquid inlet of the air inlet tower 2 is arranged above the flange, acid waste gas enters the air inlet tower 2 from the waste gas inlet, enters the lower water storage tank 10 from top to bottom, enters water from the upper half, flows down through the annular gap of 3mm on the inner wall of the cylinder body, and flushes SiO on the inner cylinder wall 2 The attachments prevent adhesion and crystallization, TCS in the tail gas reacts with water when the upper space of the water storage tank 10 passes through the annular water curtain, and SiO is generated 2 The particles are flushed into the water storage tank 10 by a water curtain, water is always flushed in the tail gas inlet 4, and SiO generated by the reaction of TCS and water vapor is generated 2 The waste gas can not be directly adhered to the inner wall of the air inlet, and the waste gas inlet is not blocked. The air inlet tower 2 is not provided with a nozzle, so that the water vapor mist generated by spraying is prevented from rising into the air inlet to cause blockage.
According to the tail gas processor for the epitaxial process, provided by the invention, under the condition that other parts are not changed, a liquid inlet of the air inlet tower 2, the nozzle spraying device 6 and the water flow nozzle are all communicated with the spraying pump 15, the filter 11 is connected in series on a connecting pipeline, and the inlet of the spraying pump 15 is communicated with the liquid of the negative pressure cavity 25. The spray water is all circularly supplied by a large-flow spray pump 15, and the water inlet of the spray pump 15 comes from a negative pressure cavity 25. The tail gas is subjected to circulating continuous water washing treatment, and in the whole water washing treatment process, the tail gas is effectively mixed and dissolved in water through the pall rings wetted in the chambers, and the use amount of circulating water can be reduced.
For the tail gas processor of the epitaxial process in the above embodiments, the venturi mixed flow nozzle 16 is installed at the water surface position of the negative pressure cavity 25, and the venturi mixed flow nozzle 16 is used for forming SiO on the water surface 2 The crystallization floaters are dispersed and fully mixed with water uniformly.
In order to further optimize the technical scheme, the water inlet 19 is arranged on the water storage tank 10 at the normal pressure cavity 26, an overflow pipe is arranged in the overflow box 8 and is communicated with the water outlet 12, the water outlet 12 is provided with the water drainage valve 13, and the on-off of the water outlet 12 is controlled. The turbid liquid in the overflow box 8 is discharged from the overflow port 9 of the overflow pipe, the structure is simple, during normal operation, the water is completely discharged from the overflow port 9 only, the overflow pipe is not provided with any valve, and the normal pressure cavity 26 is filled with waterThe water flows all the way to the overflow box 8. Through continuous stable water supplementing, not only meets certain water dissolving and absorbing capacity, ensures that equipment is always in a stable treatment state, and simultaneously continuously discharges dissolved SiO through water flow 2 Turbid liquid of particles. The top of the overflow box 8 is provided with a flushing spray head 28, the flushing spray head 28 is communicated with the liquid of the normal pressure cavity 26, and the SiO deposited in the overflow box 8 is flushed 2 The adherent prevents the adhesion and crystallization. The upper part of the overflow box 8 is provided with a normal pressure port communicated with the atmosphere, and the normal pressure state of the overflow box 8 is maintained.
The pressure sensor 7 is arranged in the negative pressure cavity 25, the pressure sensor 7 is connected with the variable frequency control box 27, the variable frequency control box 27 is connected with the variable frequency pump 14, the variable frequency pump 14 is connected with the ejector, and the variable frequency pump flowmeter 18 is connected in series on a connecting pipeline between the variable frequency pump 14 and the ejector to detect the flow entering the ejector. The ejector negative pressure principle is utilized to form stable negative pressure, meanwhile, the frequency converter is adjusted through the pressure sensor 7 arranged in the negative pressure cavity 25 to control the rotating speed of the pump motor, the jet speed of the ejector is adjusted through adjusting the output pressure of the pump to realize the adjustment and stable control of the negative pressure, the negative pressure is adjusted stably and can respond quickly along with the change of air flow, and the negative pressure vacuum pumping speed is automatically adjusted under the condition that the tail gas flow change pipeline part is influenced, so that the stable negative pressure stability of production equipment is ensured.
The variable frequency control box 27 is also connected with the liquid level switch 17, the liquid level switch 17 is positioned in the negative pressure cavity 25 and can measure the liquid level in the negative pressure cavity 25, two preset heights are arranged, one low value and one high value, and when the liquid level is lower than the low value, the pump is stopped; when the value is higher than the high value, an alarm is sent out, and the normal operation of the equipment is ensured.
In the description of the present invention, it should be noted that the azimuth or positional relationship indicated by the terms top, bottom, etc. are based on the azimuth or positional relationship shown in the drawings, and are merely for convenience of describing the present invention and simplifying the description, and are not indicative or implying that the apparatus or element referred to must have a specific azimuth, be constructed and operated in a specific azimuth, and thus should not be construed as limiting the present invention.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. The tail gas treater of the epitaxial process is characterized by comprising a water storage tank (10), a jet spray tower (1) communicated with the water storage tank (10) and used for absorbing waste gas, and a negative pressure generator (23) connected with an exhaust port of the jet spray tower (1), wherein a negative pressure cavity (25) is formed in a region communicated with the front of the negative pressure generator (23), a normal pressure cavity (26) is formed in a region communicated with the rear of the negative pressure generator (23), a water inlet (19) for introducing continuous water flow is formed in the water storage tank (10), and the negative pressure cavity (25) is communicated with liquid in the normal pressure cavity (26); the device also comprises an overflow box (8) which is in a normal pressure state and is in liquid communication with the negative pressure cavity (25), and turbid liquid in the overflow box (8) is discharged from the overflow port (9).
2. The tail gas processor of the epitaxial process according to claim 1, wherein the negative pressure generator (23) comprises a jet device for jetting liquid and converging the jetted liquid with tail gas of the exhaust port and jetting the liquid into the normal pressure cavity (26), and the normal pressure cavity (26) is provided with a purified gas outlet (21) for discharging purified gas after gas-liquid separation.
3. The tail gas processor of the epitaxial process according to claim 2, further comprising an air inlet tower (2) with a bottom end communicating with the water storage tank (10) for performing a first water-washing dissolution of the waste gas;
the device also comprises an intermediate spray tower (5) which is communicated between the air inlet tower (2) and the jet spray tower (1) and is used for absorbing acid gas through dispersed water, and the bottom end of the intermediate spray tower (5) is communicated with the water storage tank (10);
the cylinder body of the jet spray tower (1) is immersed below the water surface in the water storage tank (10).
4. A tail gas processor for an epitaxial process according to claim 3, wherein the middle spray tower (5) and the jet spray tower (1) are internally provided with at least two layers of nozzle spray devices (6), and a packing layer is arranged below each layer of nozzle spray devices (6);
a water flow nozzle is arranged on a communicating pipe between the middle spray tower (5) and a communicating pipe between the middle spray tower (5) and the jet spray tower (1);
and the side walls of the middle spray tower (5) and the jet spray tower (1) are provided with observation overhauling holes.
5. The tail gas processor of the epitaxial process according to claim 4, wherein the top end of the air inlet tower (2) is provided with an air inlet cylinder, and the air inlet cylinder is provided with a tail gas inlet (4) and a protective gas inlet (24);
the top of the air inlet cylinder is provided with a rotating shaft which is the same as the axial direction of the air inlet cylinder, a scraping plate (3) capable of removing crystals adhered to the inner wall of the air inlet cylinder is fixed on the rotating shaft, and a gap is formed between the scraping plate (3) and the inner wall of the air inlet cylinder.
6. The tail gas processor of the epitaxial process according to claim 5, wherein a flange is connected to the lower portion of the air inlet cylinder, an annular gap is formed between the edge of the flange and the inner wall of the air inlet tower (2), and a liquid inlet of the air inlet tower (2) is arranged above the flange.
7. The tail gas processor of the epitaxial process according to claim 6, characterized in that the liquid inlet of the air inlet tower (2), the nozzle spraying device (6) and the water flow nozzle are all communicated with a spraying pump (15), and the inlet of the spraying pump (15) is communicated with the liquid of the negative pressure cavity (25).
8. The tail gas processor of the epitaxial process according to any one of claims 1 to 7, characterized in that the negative pressure chamber (25) is provided with a venturi mixing nozzle (16) at the water level for dispersing the crystal floats formed on the water surface and sufficiently mixing them with water.
9. The tail gas processor of an epitaxial process according to any one of claims 1 to 7, characterized in that the water inlet (19) is arranged on the water storage tank (10) at the normal pressure cavity (26), an overflow pipe is arranged in the overflow box (8), and turbid liquid in the overflow box (8) is discharged from an overflow port (9) of the overflow pipe;
a flushing spray header (28) is arranged at the top of the overflow box (8), and the flushing spray header (28) is communicated with the liquid of the normal pressure cavity (26);
the upper part of the overflow box (8) is provided with a normal pressure port communicated with the atmosphere.
10. The tail gas processor of the epitaxial process according to any one of claims 1 to 7, wherein a pressure sensor (7) is installed in the negative pressure cavity (25), the pressure sensor (7) is connected with a variable frequency control box (27), the variable frequency control box (27) is connected with a variable frequency pump (14), and the variable frequency pump (14) is connected with the ejector;
the variable frequency control box (27) is also connected with the liquid level switch (17), and the liquid level switch (17) is positioned in the negative pressure cavity (25) and can measure the liquid height in the negative pressure cavity (25).
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| CN110917854A (en) * | 2019-12-04 | 2020-03-27 | 西安奕斯伟硅片技术有限公司 | Tail gas treatment device |
| TWI807334B (en) * | 2020-06-24 | 2023-07-01 | 新加坡商益科斯有限公司 | Equipment for handling gaseous pollutants |
| CN114984738A (en) * | 2022-06-15 | 2022-09-02 | 刘六亭 | Washing type constant-pressure waste gas processor |
| CN115183252B (en) * | 2022-07-28 | 2023-05-05 | 上海协微环境科技有限公司 | Tail gas treatment device |
| CN115254424B (en) * | 2022-07-28 | 2023-05-16 | 上海协微环境科技有限公司 | Tail gas treatment system with high-efficiency dust removal function |
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| JP2003260333A (en) * | 2002-03-07 | 2003-09-16 | Komatsu Electronic Metals Co Ltd | Apparatus for treating exhaust gas |
| CN101318096A (en) * | 2008-07-04 | 2008-12-10 | 张文光 | Epitaxial furnace waste gas purifier |
| CN206285705U (en) * | 2016-12-09 | 2017-06-30 | 上海至纯洁净系统科技股份有限公司 | A kind of exhaust gas treating device of epitaxy technique |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003260333A (en) * | 2002-03-07 | 2003-09-16 | Komatsu Electronic Metals Co Ltd | Apparatus for treating exhaust gas |
| CN101318096A (en) * | 2008-07-04 | 2008-12-10 | 张文光 | Epitaxial furnace waste gas purifier |
| CN206285705U (en) * | 2016-12-09 | 2017-06-30 | 上海至纯洁净系统科技股份有限公司 | A kind of exhaust gas treating device of epitaxy technique |
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Address after: No. 170 purple sea road, Minhang District, Shanghai Applicant after: PURE & CLEAN PROCESS SYSTEMS Co.,Ltd. Address before: 200241 03A 1, Ting 1 building, 555 Dongchuan Road, Minhang District, Shanghai. Applicant before: PURE & CLEAN PROCESS SYSTEMS Co.,Ltd. |
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