CN106487368A - High speed digital switches based on bipolar semiconductor triode - Google Patents
High speed digital switches based on bipolar semiconductor triode Download PDFInfo
- Publication number
- CN106487368A CN106487368A CN201610818223.8A CN201610818223A CN106487368A CN 106487368 A CN106487368 A CN 106487368A CN 201610818223 A CN201610818223 A CN 201610818223A CN 106487368 A CN106487368 A CN 106487368A
- Authority
- CN
- China
- Prior art keywords
- bipolar semiconductor
- triode
- control signal
- main switch
- semiconductor triode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
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- Electronic Switches (AREA)
Abstract
The invention discloses a kind of high speed digital switches based on bipolar semiconductor triode, including a main switch circuit and a resistance, main switch circuit includes the first bipolar semiconductor triode, and the transwitch diode being connected between the first bipolar semiconductor transistor collector and emitter stage.Also include a control signal level shifting circuit being connected on main switch circuit, control signal level shifting circuit includes the second bipolar semiconductor triode, and a regulation resistance being connected on the second bipolar semiconductor transistor base.The switching process of main switch circuit is controlled using bipolar semiconductor triode, achieve the control signal control different from controlled signal amplitude to require, effectively reduce cost, the area occupied of PCB is saved, significantly improved using flexibility and applicability, be particularly suitable for Communication Control use being carried out in the IC-card interface of intelligent electric energy meter.
Description
Technical field
The present invention relates to a kind of digital switch circuit, more particularly to a kind of control range wide, practical based on bipolar
The high speed digital switches of type transistor, belong to electronic communication technology field.
Background technology
In electronic communication technology field, a lot of digital circuits need to carry out switch control rule to data signal, logical to facilitate
The transmission of news information.What which was traditional is achieved in that using integrated digital gate circuit, but the maximum of existing integrated digital gate circuit
Limitation is control signal and the maximum supply voltage no more than integrated digital gate circuit of controlled signal amplitude, otherwise,
Easily cause integrated digital gate circuit to damage or work abnormal, cause communication be normally carried out.
For improving this situation, facilitate data signal switch control rule, want, with regard to becoming the present invention, the problem for solving.
Content of the invention
In view of above-mentioned existing situation and deficiency, the present invention is intended to provide a kind of applicability is good, low cost, area occupied are little
Based on the high speed digital switches of bipolar semiconductor triode, to meet the use needs of different industries.
The present invention is achieved through the following technical solutions：
Based on the high speed digital switches of bipolar semiconductor triode, including a main switch circuit and a resistance, main switch
Circuit includes the first bipolar semiconductor triode, and is connected to the first bipolar semiconductor transistor collector and emitter stage
Between transwitch diode；The positive pole of transwitch diode is connected with the colelctor electrode of the first bipolar semiconductor triode, and
Connect with extraneous digital output end；The negative pole of transwitch diode is connected with the emitter stage of the first bipolar semiconductor triode,
And connect with extraneous digital input end；The base stage of the first bipolar semiconductor triode is connected with extraneous control signal by resistance
Logical.
Based on the high speed digital switches of bipolar semiconductor triode, also include that is connected to the control on main switch circuit
Signal level shift circuit processed, control signal level shifting circuit include the second bipolar semiconductor triode, and are connected to
A regulation resistance on second bipolar semiconductor transistor base, the base stage of the second bipolar semiconductor triode is by adjusting
Economize on electricity resistance is connected with extraneous control signal, and the colelctor electrode of the second bipolar semiconductor triode is by resistance and first ambipolar half
The base stage connection of conductor triode, the grounded emitter of the second bipolar semiconductor triode.
The transwitch diode is alternatively Schottky diode.
High speed digital switches based on bipolar semiconductor triode of the present invention, by main switch circuit and resistance, with
And the cooperating of main switch circuit and control signal level shifting circuit, using bipolar semiconductor triode to main switch electricity
The switching process on road is controlled, it is achieved that the control signal control requirement different from controlled signal amplitude, meanwhile, eliminate
Requirement of the digital switch circuit to control signal or controlled signal voltage, compares integrated digital gate circuit and effectively reduces into
This, has saved the area occupied of PCB, has improve using flexibility and applicability, be particularly suitable for connecing in the IC-card of intelligent electric energy meter
Mouth carries out Communication Control use.
Description of the drawings
Fig. 1 is the electrical block diagram of the present invention；
The electrical block diagram that Fig. 2 is installed and used on intelligent electric energy meter for the present invention.
Specific embodiment
Below so that control signal is different with controlled signal voltage as an example, the present invention is done in conjunction with accompanying drawing 1 further detailed
Thin description：
High speed digital switches based on bipolar semiconductor triode of the present invention, including main switch circuit, resistance R2 and
The control signal level shifting circuit being connected on main switch circuit.Using control signal level shifting circuit control main switch electricity
Being turned on and off of road, realizes the data signal input of main switch circuit two ends, the automatically controlling of output procedure.
Main switch circuit includes the first bipolar semiconductor triode Q1, and is connected to three pole of the first bipolar semiconductor
Transwitch diode D1 between the collector and emitter of pipe Q1.Certainly, transwitch diode is alternatively Schottky diode.
The positive pole of transwitch diode D1 is connected with the colelctor electrode of the first bipolar semiconductor triode Q1, and with extraneous digital output end
Connection.The negative pole of transwitch diode D1 is connected with the emitter stage of the first bipolar semiconductor triode Q1, and digital with the external world
Input is connected.Resistance R2 is connected in the base stage of the first bipolar semiconductor triode.
Control signal level shifting circuit includes the second bipolar semiconductor triode Q2, and it is ambipolar to be connected to second
One in the base stage of transistor Q2 adjusts the base stage of resistance R1, the second bipolar semiconductor triode Q2 by adjusting
Resistance R1 is connected with extraneous control signal, and the colelctor electrode of the second bipolar semiconductor triode Q2 is bipolar with first by resistance R2
The base stage connection of type transistor Q1, the grounded emitter of the second bipolar semiconductor triode Q2.
When specifically working on power, when control signal Control=0, the second bipolar semiconductor triode Q2 ends, the
One ambipolar transistor Q1 is also switched off, and in the presence of transwitch diode D1, main switch circuit is closed, numeral output
End Dout=0；When control signal Control=1, the second bipolar semiconductor triode Q2 is opened, signal in rising edge, the
One ambipolar transistor Q1 is opened, and transwitch diode D1 ends, and in trailing edge, transwitch diode D1 leads signal
Logical, main switch circuit is opened, and digital output end Dout is equal to digital input end Din, and data signal is connected.Partly led using ambipolar
The Current amplifier effect of body triode, it is achieved that the control signal control requirement different from controlled signal amplitude, while, it is to avoid
Requirement of the whole digital switch circuit to control signal or controlled signal voltage, completes based on three pole of bipolar semiconductor
The high-speed digital signal control of pipe.
Certainly, said process is control signal and the asynchronous specific work process of controlled signal voltage, works as control
When signal is identical with controlled signal voltage, then control signal level shifting circuit can be omitted, directly by control signal and electricity
Resistance R2 is controlled to the first bipolar semiconductor triode Q1, and then completes the switch control rule to main switch circuit.
Embodiment one
As shown in Fig. 2 the high speed digital switches based on bipolar semiconductor triode of the present invention are applied to ISO7816 interface
Clock switch control, wherein, control signal and controlled signal are 5V level.
The IC-card interface of intelligent electric energy meter is the intelligent card interface for meeting ISO7816 standard.In intelligent electric energy meter, master control
Device processed needs to be communicated with two-way ISO7816 interface, and a road is ESAM chip, and in addition a road is intelligent card chip.But master control
Device processed is typically only capable to produce the clock supply two-way interface of a road 1-5MHz, and intelligent card chip needs after this has been completed to
All signals include power supply Close All.Using the high speed digital switches based on bipolar semiconductor triode of the present invention
During controlling clock signal, input end of clock is connected with ESAM chip, and output terminal of clock is connected with master controller, extraneous control letter
Number CLK_Control is connected with the base stage of the first bipolar semiconductor triode Q1 in main switch circuit by resistance R2.Its
In, CLKin amplitude is 5V, and frequency is 4.67MHz, and dutycycle 50%, CLKout amplitude is 4.7V, CLK_Control signal width
Spend for 5V, low level unlatching.When CLK_Control is for low level, CLK signal is loaded on IC-card interface；Work as CLK_
When Control is high level, CLK signal is closed, and is low level by state, complies fully with the standard of ISO7816.
Claims (3)
1. high speed digital switches based on bipolar semiconductor triode, it is characterised in that including a main switch circuit and
Individual resistance, the main switch circuit include the first bipolar semiconductor triode, and are connected to the first bipolar semiconductor three
Transwitch diode between pole pipe collector and emitter；The positive pole of the transwitch diode and the first bipolar semiconductor
The colelctor electrode connection of triode, and connect with extraneous digital output end；The negative pole of the transwitch diode is ambipolar with first
The emitter stage connection of transistor, and connect with extraneous digital input end；The first bipolar semiconductor triode
Base stage is connected with extraneous control signal by resistance.
2. high speed digital switches based on bipolar semiconductor triode according to claim 1, it is characterised in that also wrap
A control signal level shifting circuit being connected on main switch circuit is included, the control signal level shifting circuit includes
Two bipolar semiconductor triodes, and a regulation resistance being connected on the second bipolar semiconductor transistor base, the
The base stage of two bipolar semiconductor triodes is connected with extraneous control signal by adjusting resistance, three pole of the second bipolar semiconductor
The colelctor electrode of pipe is connected with the base stage of the first bipolar semiconductor triode by resistance, the second bipolar semiconductor triode
Grounded emitter.
3. high speed digital switches based on bipolar semiconductor triode according to claim 1, it is characterised in that described
Transwitch diode is alternatively Schottky diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610818223.8A CN106487368A (en) | 2016-09-13 | 2016-09-13 | High speed digital switches based on bipolar semiconductor triode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610818223.8A CN106487368A (en) | 2016-09-13 | 2016-09-13 | High speed digital switches based on bipolar semiconductor triode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106487368A true CN106487368A (en) | 2017-03-08 |
Family
ID=58273693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610818223.8A Pending CN106487368A (en) | 2016-09-13 | 2016-09-13 | High speed digital switches based on bipolar semiconductor triode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106487368A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202085150U (en) * | 2011-02-15 | 2011-12-21 | 深圳创维数字技术股份有限公司 | Level conversion equipment |
| CN202455521U (en) * | 2012-02-23 | 2012-09-26 | 上海博泰悦臻电子设备制造有限公司 | Microphone (MIC) input circuit and vehicle-mounted system |
| CN203243301U (en) * | 2013-05-31 | 2013-10-16 | 成都锐奕信息技术有限公司 | System switch controlled by wireless signal |
| CN104730454A (en) * | 2015-03-28 | 2015-06-24 | 安徽阿瑞特汽车电子科技有限公司 | Automatic detection circuit for digital switch circuit |
| CN105128779A (en) * | 2015-08-28 | 2015-12-09 | 安徽江淮汽车股份有限公司 | Load switching information collecting system for vehicle body controller |
| CN105656465A (en) * | 2016-03-25 | 2016-06-08 | 深圳市九洲电器有限公司 | GPIO voltage jumping treatment circuit and digital television terminal |
-
2016
- 2016-09-13 CN CN201610818223.8A patent/CN106487368A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202085150U (en) * | 2011-02-15 | 2011-12-21 | 深圳创维数字技术股份有限公司 | Level conversion equipment |
| CN202455521U (en) * | 2012-02-23 | 2012-09-26 | 上海博泰悦臻电子设备制造有限公司 | Microphone (MIC) input circuit and vehicle-mounted system |
| CN203243301U (en) * | 2013-05-31 | 2013-10-16 | 成都锐奕信息技术有限公司 | System switch controlled by wireless signal |
| CN104730454A (en) * | 2015-03-28 | 2015-06-24 | 安徽阿瑞特汽车电子科技有限公司 | Automatic detection circuit for digital switch circuit |
| CN105128779A (en) * | 2015-08-28 | 2015-12-09 | 安徽江淮汽车股份有限公司 | Load switching information collecting system for vehicle body controller |
| CN105656465A (en) * | 2016-03-25 | 2016-06-08 | 深圳市九洲电器有限公司 | GPIO voltage jumping treatment circuit and digital television terminal |
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| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170308 |