CN106487218B - The charge pump circuit of chip is received applied to wireless charging - Google Patents
The charge pump circuit of chip is received applied to wireless charging Download PDFInfo
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- CN106487218B CN106487218B CN201511019372.XA CN201511019372A CN106487218B CN 106487218 B CN106487218 B CN 106487218B CN 201511019372 A CN201511019372 A CN 201511019372A CN 106487218 B CN106487218 B CN 106487218B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
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Abstract
The present invention relates to a kind of charge pump circuit that chip is received applied to wireless charging, the wherein circuit includes switching signal generation module, to produce the switching signal of dickson electric charge pump modules according to chip internal power supply；Dickson electric charge pump modules, the reference voltage of input to be boosted；Voltage clamp module, to the reference voltage after clamping voltage boosting, voltage clamp module includes clamp zener pipe, the five end clamp zener pipes that the clamp zener pipe is 5.5V for the reverse-biased clamp voltage based on TSMC025BICMOS techniques；Output module, the voltage exported to output voltage clamp module.Using the charge pump circuit for being applied to wireless charging and receiving chip of this kind of structure, pumped using dickson structure charges, domain changes small, and pressure difference is controllable between every grade of boosting bootstrap capacitor pole plate, selection optimization has been carried out in technique to output clamper Zener, chip area has been reduced, reduces cost.
Description
Technical field
The present invention relates to electronic technology field, more particularly to wireless charging, in particular to one kind to connect applied to wireless charging
Receive the charge pump circuit of chip.
Background technology
It is a circuit system suitable for the transmission of portable use radio source that wireless charging, which receives chip, it is not only provided
AC/DC power supplys are changed, while the also integrated digital control function met needed for WPC V1.1.2 communication protocol standards.Controlled with sending
Device processed is combined, and can be that wireless charging realizes complete induction power delivery system.Its cardinal principle is：Utilize electricity
The equipment that magnetic induction principle charges, similar to transformer.Respectively there is a coil sending and receiving end, send end-coil and connect
Connect cable power and produce electromagnetic signal, the electromagnetic signal of the coil-induced transmitting terminal of receiving terminal is so as to produce electric current to equipment charge.
Functional block diagram is as shown in Figure 1.
Wherein, Sync Rectifier, Rect Power and Digital Power are mainly included with Boost correlation modules
Module：The induced electricity that receiving coil sensing transmitting terminal electromagnetic signal produces flows through AC ends and is sent into synchronous rectifier generation RECT electricity
Pressure, RECT voltages are sent into RECT Power and produce 5V power supplys inside multichannel, wherein being sent into Digital Power all the way produces 2.5V
Internal digital power supply, is sent into Boost and produces multiple high pressures needed for chip internal all the way.
The one of booster line constructions of booster circuit Boost are as shown in Figure 2.
As shown in Fig. 2, chip Boost boost modules are mainly acted on by 10MHz pulse signals after rest-set flip-flop
Boosting in bootstrap capacitor mimcap_2p0 and crtmom so that basic voltage 5V obtains high level after 1-4 grades of boostings,
And ideal level 11.2V finally is exported by Zener diodes clamp, simulation curve is as shown in Figure 3.Wherein, RECT=5V is set.
It is to be based on TSMC025BCD techniques, the wherein pressure-resistant difference of mimcap_2p0 and crtmom capacitances that wireless charging, which receives chip,
It is 6V and 40V, then in charge pump booster circuit, due to the pressure-resistant problem of bootstrap capacitor, partition capacitance just needs to use
The structure of crtmom come avoid because it is pressure-resistant may caused by capacitance breakdown problem, as shown in figure 4, pressure difference between crtmom capacitor plates
It is pressure-resistant beyond mimcap_2p0 maximums more than 10V.
But on the premise of identical capacitance values, increased much than mimcap_2p0 using area needed for crtmom capacitances,
As shown in Figure 5.
Capacitance correction data explanation is as shown in table 1.
1 capacitance parameter of table contrasts
As can be seen from Table 1, in existing charge pump booster circuit, due to needing to take into account the pressure-resistant of Bootstrap capacitance
Characteristic, will cause circuit layout area to increase, and cost improves.So, it is simultaneous on the premise of charge pump output voltage performance is ensured
Gu capacitance is pressure-resistant and chip area, is just particularly important.
The content of the invention
The shortcomings that the purpose of the present invention is overcoming the above-mentioned prior art, there is provided a kind of to ensure charge pump output voltage
On the premise of performance, reduce the pressure-resistant charge pump circuit for being applied to wireless charging and receiving chip with chip area of capacitance.
To achieve these goals, the charge pump circuit that wireless charging receives chip that is applied to of the invention has following structure
Into：
This is applied to the charge pump circuit that wireless charging receives chip, it is mainly characterized by, and the circuit includes：
Switching signal generation module, to produce the switching signal of dickson electric charge pump modules according to chip internal power supply；
Dickson electric charge pump modules, the reference voltage of input to be boosted；
Voltage clamp module, to the reference voltage after clamping voltage boosting, the voltage clamp module includes clamp zener
Pipe, the five end clamp zeners that the clamp zener pipe is 5.5V for the reverse-biased clamp voltage based on TSMC025BICMOS techniques
Pipe；
Output module, to export the voltage that the voltage clamp module is exported.
Further, the voltage clamp module includes the first Zener and the second Zener, first Zener
The RECT voltages that the positive output termination synchronous rectifier of pipe produces, the positive input of first Zener with it is described
The positive input of second Zener is connected, the positive output terminal of second Zener and the output module and institute
The dickson electric charge pump modules stated are connected.
Further, first is further included between the dickson electric charge pump modules and the voltage clamp module
Metal-oxide-semiconductor and the first capacitance, the source electrode of first metal-oxide-semiconductor, the grid of first metal-oxide-semiconductor, first metal-oxide-semiconductor
NBL ends, the output terminal of the dickson electric charge pump modules be connected, the draining of first metal-oxide-semiconductor, described
The positive output terminal of the first end of one capacitance and second Zener is connected, the second termination of first capacitance
Ground.
Yet further, the switching signal generation module includes voltage follower, the second metal-oxide-semiconductor and switching signal
Generation unit；The input terminal of the voltage follower is connected with the chip internal power supply, the voltage follower
Output terminal be connected with the source electrode of the second metal-oxide-semiconductor, the draining of second metal-oxide-semiconductor, the grid of second metal-oxide-semiconductor with
And the power end of the switching signal generating unit is connected.
Yet further, the dickson electric charge pump modules include the 3rd NMOS tube, the 4th NMOS tube, the 5th NMOS
Pipe, the 6th NMOS tube, the second capacitance, the 3rd capacitance, the 4th capacitance and the 5th capacitance, the source electrode of the 3rd NMOS tube connect
The reference voltage of input, the grid of the 3rd NMOS tube, the draining of the 3rd NMOS tube, the 4th NMOS tube
Source electrode and the first end of second capacitance be connected；Grid, the 4th NMOS of 4th NMOS tube
The first end of the draining of pipe, the source electrode of the 5th NMOS tube and the 3rd capacitance is connected；Described the 5th
The grid of NMOS tube, the draining of the 5th NMOS tube, the source electrode of the 6th NMOS tube and the 4th capacitance
First end be connected；The grid of 6th NMOS tube, the draining of the 6th NMOS tube, the 5th capacitance
The source electrode of first end and first metal-oxide-semiconductor is connected；The second end of second capacitance and the described the 4th electricity
The second end of appearance is connected with the first output terminal of the switching signal generating unit, the second end of the 3rd capacitance with
And the second end of the 5th capacitance is connected with the second output terminal of the switching signal generating unit.
The charge pump circuit for being applied to wireless charging and receiving chip in the invention is employed, using dickson structures electricity
Lotus pump replaces existing booster circuit, and reference voltage utilizes chip internal power supply, and domain variation is small, and every grade of boosting bootstrap capacitor
Pressure difference is controllable between pole plate, based on technological requirement, can take into account pressure-resistant and chip area, while to output clamp zener pipe in technique
On carried out selection optimization, it is weaker with the pressure-resistant easy leakage current characteristic of Zener back clamping to balance dickson structure output abilities
Between contradiction so that circuit on the premise of performance is ensured, reduce chip area, reduce cost.
Brief description of the drawings
Fig. 1 is the functional block diagram that wireless charging of the prior art receives chip.
Fig. 2 is booster line assumption diagram of the prior art.
Fig. 3 is the curve map of charge pump of the prior art boosting simulation curve.
Fig. 4 is crtmom polar plate voltages Transient figure of the prior art.
Fig. 5 is mimcap_2p0 and crtmom area comparison diagrams under identical capacitance values of the prior art.
Fig. 6 is the structure diagram of the Pyatyi dickson charge pumps in the present invention.
Fig. 7 is the structure diagram of the switching signal generation module in the present invention.
Fig. 8 is the structure diagram for being applied to wireless charging and receiving the charge pump circuit of chip in the present invention.
Fig. 9 is the four end clamp zener pipes that the two reverse-biased clamp voltage for just connecing a reversal connection in the present invention is 6.2V
I-V curve figure.
Figure 10 is the five end clamp zener pipes that two three reverse-biased clamp voltages for just connecing a reversal connection in the present invention are 5.5V
I-V curve figure.
Figure 11 is the profile for the four end clamp zener pipes that the reverse-biased clamp voltage in the present invention is 6.2V.
Figure 12 is the profile for the five end clamp zener pipes that the reverse-biased clamp voltage in the present invention is 5.5V.
Figure 13 is that the charge pump of the dickson structures in the present invention exports simulation curve.
Figure 14 is two kinds of first comparison diagrams of structure chip area of charge pump in the present invention.
Figure 15 is two kinds of second comparison diagrams of structure chip area of charge pump in the present invention.
Embodiment
In order to more clearly describe the technology contents of the present invention, carried out with reference to specific embodiment further
Description.
Based on TSMC025BCD techniques, the present invention is by the way that wireless charging reception chip internal charge pump circuit is designed to
Dickson structures so that pressure difference is controllable between every grade of boosting bootstrap capacitor pole plate, and capacitance selection takes into account pressure-resistant and area, pulse electricity
Pressure is optimized based on internal existing voltage and line construction, on the premise of ensureing that charge pump performance is constant, reduces electric charge
Chip area is pumped, reduces cost.
The charge pump circuit for being applied to wireless charging reception chip in the present invention includes：
Switching signal generation module, to produce the switching signal of dickson electric charge pump modules according to chip internal power supply；
Dickson electric charge pump modules, the reference voltage of input to be boosted；
Voltage clamp module, to the reference voltage after clamping voltage boosting, the voltage clamp module includes clamp zener
Pipe, the five end clamp zeners that the clamp zener pipe is 5.5V for the reverse-biased clamp voltage based on TSMC025BICMOS techniques
Pipe；
Output module, to export the voltage that the voltage clamp module is exported.
In a preferred embodiment, the voltage clamp module includes the first Zener and the second Zener,
The positive output termination synchronous rectifier of first Zener produces RECT voltages, first Zener it is positive defeated
Enter end with the positive input of second Zener to be connected, the positive output terminal of second Zener and described
Output module is connected with the dickson electric charge pump modules.
In a preferred embodiment, the dickson electric charge pump modules and the voltage clamp module it
Between further include the first metal-oxide-semiconductor and the first capacitance, the source electrode of first metal-oxide-semiconductor, the grid of first metal-oxide-semiconductor, institute
(metal-oxide-semiconductor shading ring is N+buried layer defined in technique level, is metal-oxide-semiconductor at the NBL ends for the first metal-oxide-semiconductor stated
NBL ends), the output terminal of the dickson electric charge pump modules be connected, the draining of first metal-oxide-semiconductor, described first
The positive output terminal of the first end of capacitance and second Zener is connected, the second termination of first capacitance
Ground.
Since the mobility in hole in Semiconductor Physics is 1/2 to the 1/4 of electronics, then the current driving ability of PMOS tube
It is weaker than NMOS tube, i.e., under identical driving force, area is greater than NMOS tube needed for PMOS tube.So it is contemplated that using
NMOS tube does dickson charge pump constructions, as shown in fig. 6, wherein input signal A for boosting reference level, a1, a2 for two-phase not
It is folded switching signal, phase difference 180 degree；Switching signal effect under, reference level is raised step by step, by 5 grades boosting after from
Output terminal Y ends export.It is as shown in table 2 that concrete signal describes process.
2 dickson charge pump signal explanations of table
| Signal | Level | Low level | High level | Signal description |
| A | Vref | Boosting reference level | ||
| a1 | 0 | Vref | Switching signal | |
| a2 | 0 | Vref | Switching signal (reverse with a1) | |
| b1 | Vref-Vt | Vref-Vt+Vref | Level after first order boosting | |
| b2 | 2Vref-2Vt | 2Vref-2Vt+Vref | Level after the boosting of the second level | |
| b3 | 3Vref-3Vt | 3Vref-3Vt+Vref | Level after third level boosting | |
| b4 | 4Vref-4Vt | 4Vref-4Vt+Vref | Level after fourth stage boosting | |
| b5 | 5Vref-5Vt | 5Vref-5Vt+Vref | Level after level V boosting | |
| … | … | … | … |
As can be seen from the above table, for boost level often after first class boost, output level increases Vref-Vt；It is so right
In final output value Y, can be adjusted by three kinds of methods：
1st, Vref value is adjusted；
2nd, metal-oxide-semiconductor threshold voltage vt is adjusted；
3rd, booster pulse series is adjusted.
Wherein, NMOS tube threshold voltage vt formula is：
In formulaVt is easily affected by temperature as can be seen here, and then influences
Dickson charge pump output voltages.So we can be contemplated so that a1, a2 high level are Vref+Vt, specific method such as Fig. 7
It is shown.
As shown in fig. 7, portion utilizes existing follower in the chip, only increase NMOS tube M6 and constant-current source, reduce as far as possible
The chip area increase that circuit change is brought, then incoming level Vref obtains output level Vref+ after follower and M6
Switch levels of the Vt as a1, a2, wherein M6 are consistent with M1~M5 pipe types size in charge pump；So exist
The influence of NMOS tube Vt can be eliminated in dickson charge pumps, it is as shown in table 3 below.
Dickson charge pump signal explanations after the optimization of table 3
As can be seen from the above table, revised dickson charge pump output voltages only with input reference level and voltage-boosting stage
Number is related, and n-th grade of boosting bootstrap capacitor pole plate pressure difference is nVref-Vt, can be according to the not corresponding voltage endurance capability of plates of similar polarity selection of differential pressure
Bootstrap capacitor.
According to TSMC025BICMOS techniques, mimcap_2p0 is pressure-resistant 6V, crtmom is pressure-resistant 40V, then with foregoing Boost
Exemplified by module booster circuit, it is exported 11.2V by Zener diodes clamp, and boost configuration is according to Dickson structures such as Fig. 8 institutes
Show.
As shown in figure 8, in a preferred embodiment, the switching signal generation module includes voltage follow
Device, the second metal-oxide-semiconductor and switching signal generating unit；The input terminal of the voltage follower and the chip internal power supply
It is connected, the output terminal of the voltage follower is connected with the source electrode of the second metal-oxide-semiconductor, the drain electrode of second metal-oxide-semiconductor,
The grid of second metal-oxide-semiconductor and the power end of the switching signal generating unit are connected.
In a preferred embodiment, the dickson electric charge pump modules include the 3rd NMOS tube, the 4th NMOS
Pipe, the 5th NMOS tube, the 6th NMOS tube, the second capacitance, the 3rd capacitance, the 4th capacitance and the 5th capacitance, the described the 3rd
The source electrode of NMOS tube meets the reference voltage of input, the grid of the 3rd NMOS tube, the drain electrode of the 3rd NMOS tube, institute
The source electrode for the 4th NMOS tube stated and the first end of second capacitance are connected；The grid of 4th NMOS tube,
The first end of the draining of 4th NMOS tube, the source electrode of the 5th NMOS tube and the 3rd capacitance is connected
Connect；The grid of 5th NMOS tube, the draining of the 5th NMOS tube, the source electrode of the 6th NMOS tube and institute
The first end for the 4th capacitance stated is connected；The grid of 6th NMOS tube, the 6th NMOS tube drain, are described
The first end of the 5th capacitance and the source electrode of first metal-oxide-semiconductor be connected；The second end of second capacitance and
The second end of 4th capacitance is connected with the first output terminal of the switching signal generating unit, the described the 3rd electricity
The second end of appearance and the second end of the 5th capacitance are connected with the second output terminal of the switching signal generating unit
Connect.Input terminal reference level Vref=2.5V, is directly provided, switch level a1, a2 is by internal digital power supply digpower
Vref+Vt, boosting series are 4 grades of ((n+1) × Vref>11.2V nmin=4), line construction is simple and clear, according to reckoning,
Three and the fourth stage boosting bootstrap capacitor pole plate pressure difference be 3Vref-Vt and 4Vref-Vt, more than 6V, it is necessary to using crtmom capacitances.
For RECT ends clamper Zener, TSMC025BICMOS techniques give zd_dio_4t (it is reverse-biased clamp voltage be
The four end clamp zener pipes of 6.2V) and zd_dio_5d5_5t (the five end clamp zener pipes that reverse-biased clamp voltage is 5.5V) technique
Two kinds of structures, and Zener exceedes the pressure-resistant characteristic easily leaked electricity there are reverse-conducting, as shown in Fig. 9 to Figure 10.
From fig. 9, it can be seen that zd_dio_4t (the four end clamp zener pipes that reverse-biased clamp voltage is 6.2V) is in reversed bias voltage
Start the 1uA (6.7-0.7 positively biaseds) that leaks electricity more than 6V；(reverse-biased clamp voltage is from fig. 10 it can be seen that zd_dio_5d5_5t
The five end clamper Zeners of 5.5V) reversed bias voltage be greater than about 5.5V start leak electricity 1uA (6.7-0.7 positively biased × 2).
Since dickson structure output voltages have that driving force is weaker, and the pressure-resistant electric leakage of the clamp of Zener
Characteristic can weaken dickson structure output driving forces, then select rational Zener technique to be just particularly important.
It can be seen from figure 11 that the NBL current potentials of zd_dio_4t (the four end clamp zener pipes that reverse-biased clamp voltage is 6.2V)
If being less than P+, PN junction conducting electric leakage can be formed, illustrates zd_dio_4t (the four end clamper Zeners that reverse-biased clamp voltage is 6.2V
Pipe) NBL rings current potential on logic influence it is very big.
And zd_dio_5d5_5t (the five end clamp zener pipes that reverse-biased clamp voltage is 5.5V) is as shown in figure 12, its PN junction
Effective district is in PSUB, and more HVPW isolate between NBL, can be to avoid may electric leakage caused by NBL current potentials.
Therefore, the Zener of zd_dio_5d5_5t (the five end clamper Zeners that reverse-biased clamp voltage is 5.5V) is selected to make
For dickson structure output clampers, the technique is in original boost booster circuits flow and verifies effective.
As shown in figure 13, reference level of boosting is after 4 grades of boostings and low-pass filtering, output voltage (4+1) × Vref=
12.5V, and by Zener diodes clamp, export target level 11.2V, meet design needs.
With as shown in figure 13 using the contrast of dickson structure boosters domain, Figure 14 and Figure 15 divide original booster domain
It is not two kinds of charge pumps improvement circuit area comparison diagram of current drive capability 2uA and 50uA, specific area correction data is as follows
Shown in table 4.
Two kinds of charge pump area contrasts under 4 different driving ability of table
As can be seen from the above table, on the premise of current drive capability is ensured, can be shown using dickson structure charges pump
Write and reduce line related chip area, reduce cost, especially in the circuit utilization of larger current drive capability is needed, domain
Area, which reduces, seems particularly evident.
The dickson structure charges pump that the present invention is built using NMOS tube is used for wireless charging and receives chip, its incoming level
Using chip built-in digital power voltage, do not increase base modules additionally；Based on technological requirement, bootstrap capacitor can be taken into account pressure-resistant
With chip area；Improved follower output level Vref+Vt can effectively eliminate NMOS tube as clock level signal is not folded
Vt changes caused by being affected by temperature, stable charging pump output；Clamp zener pipe has carried out selection optimization in technique, balances
Contradiction between the weaker pressure-resistant easily leakage current characteristic with Zener back clamping of dickson structure output abilities；Above some is excellent
Changing to improve causes circuit on the premise of performance is ensured, to reduce chip area, reduce cost.
Boosting pump circuit has many kinds, but is all based on the principle of bootstrap capacitor boosting, wherein dickson structures of the present invention
Charge pump uses NMOS tube, simple in structure, and pressure difference is controllable between every grade of bootstrap capacitor pole plate, can take into account technological requirement and domain face
Product.Certainly, Dickson structure charges pump can also use PMOS tube to build, but its electric current driving energy under equal area size
Power will be weaker than NMOS tube, then in order to ensure current drive capability, certainly will just need to increase metal-oxide-semiconductor area, be designed with the present invention
Original intention is disagreed.In addition, the Zener as dickson structure outputs clamp, its connection, laying out pattern under different process
Also different, back clamping is pressure-resistant, and leakage current characteristic also needs to pay close attention to.
The charge pump circuit for being applied to wireless charging and receiving chip in the invention is employed, using dickson structures electricity
Lotus pump replaces existing booster circuit, and reference voltage utilizes chip internal power supply, and domain variation is small, and every grade of boosting bootstrap capacitor
Pressure difference is controllable between pole plate, based on technological requirement, can take into account pressure-resistant and chip area, while to output clamp zener pipe in technique
On carried out selection optimization, it is weaker with the pressure-resistant easy leakage current characteristic of Zener back clamping to balance dickson structure output abilities
Between contradiction so that circuit on the premise of performance is ensured, reduce chip area, reduce cost.
In this description, the present invention is described with reference to its specific embodiment.But it is clear that it can still make
Various modifications and alterations are without departing from the spirit and scope of the present invention.Therefore, specification and drawings are considered as illustrative
It is and nonrestrictive.
Claims (4)
1. a kind of charge pump circuit that chip is received applied to wireless charging, it is characterised in that the circuit includes：
Switching signal generation module, it is described to produce the switching signal of dickson electric charge pump modules according to chip internal power supply
Switching signal generation module include voltage follower, the second metal-oxide-semiconductor and switching signal generating unit；The voltage follow
The input terminal of device is connected with the chip internal power supply, the source of the output terminal of the voltage follower and the second metal-oxide-semiconductor
Pole is connected, and the draining of second metal-oxide-semiconductor, the grid of second metal-oxide-semiconductor and the switching signal produce single
The power end of member is connected；
Dickson electric charge pump modules, the reference voltage of input to be boosted；
Voltage clamp module, to the reference voltage after clamping voltage boosting, the voltage clamp module includes clamp zener pipe, institute
The five end clamp zener pipes that the clamp zener pipe stated is 5.5V for the reverse-biased clamp voltage based on TSMC025BICMOS techniques；It is defeated
Go out module, to export the voltage that the voltage clamp module is exported.
2. the charge pump circuit according to claim 1 that chip is received applied to wireless charging, it is characterised in that described
Voltage clamp module includes the first Zener and the second Zener, the positive output termination synchronous rectification of first Zener
The rectified voltage that device produces, the positive input of first Zener and the positive input phase of second Zener
Connection, positive output terminal and the output module and the dickson electric charge pump module phases of second Zener
Connection.
3. the charge pump circuit according to claim 2 that chip is received applied to wireless charging, it is characterised in that described
Further include the first metal-oxide-semiconductor and the first capacitance between dickson electric charge pump modules and the voltage clamp module, described
The source electrode of one metal-oxide-semiconductor, the grid of first metal-oxide-semiconductor, the NBL ends of first metal-oxide-semiconductor, the dickson electric charges
The output terminal of pump module is connected, the draining of first metal-oxide-semiconductor, the first end of first capacitance and described
The positive output terminal of two Zeners is connected, and the second end ground connection of first capacitance, the NBL is the first MOS
The pressure ring of pipe.
4. the charge pump circuit according to claim 3 that chip is received applied to wireless charging, it is characterised in that described
Dickson electric charge pump modules include the 3rd NMOS tube, the 4th NMOS tube, the 5th NMOS tube, the 6th NMOS tube, the second capacitance, the
Three capacitances, the 4th capacitance and the 5th capacitance, the source electrode of the 3rd NMOS tube connect the reference voltage of input, and the described the 3rd
The grid of NMOS tube, the draining of the 3rd NMOS tube, the source electrode of the 4th NMOS tube and second capacitance
First end be connected；The grid of 4th NMOS tube, the draining of the 4th NMOS tube, the 5th NMOS tube
Source electrode and the first end of the 3rd capacitance be connected；Grid, the 5th NMOS of 5th NMOS tube
The first end of the draining of pipe, the source electrode of the 6th NMOS tube and the 4th capacitance is connected；Described the 6th
The grid of NMOS tube, the draining of the 6th NMOS tube, the first end of the 5th capacitance and first metal-oxide-semiconductor
Source electrode be connected；The second end of second capacitance and the second end of the 4th capacitance and the switching signal
First output terminal of generation unit is connected, the second end of the 3rd capacitance and the second end of the 5th capacitance with
Second output terminal of the switching signal generating unit is connected.
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| CN109189141B (en) * | 2018-09-12 | 2020-06-12 | 中国电子科技集团公司第五十八研究所 | Negative voltage bootstrap circuit |
| CN110677036A (en) * | 2019-09-17 | 2020-01-10 | 长江存储科技有限责任公司 | Charge pump circuit and forming method thereof |
| CN112737329B (en) * | 2020-12-25 | 2022-05-03 | 上海贝岭股份有限公司 | Voltage control, high voltage generation circuit and method, apparatus and storage medium |
| CN113311899B (en) * | 2021-08-02 | 2021-11-16 | 四川蕊源集成电路科技有限公司 | Voltage regulator |
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| CN103348560A (en) * | 2010-12-29 | 2013-10-09 | 普罗秋斯数字健康公司 | Wirelesss energy sources for integrated circuits |
| CN103647449A (en) * | 2013-12-18 | 2014-03-19 | 嘉兴中润微电子有限公司 | Boost charge pump circuit |
| CN104854771A (en) * | 2012-10-29 | 2015-08-19 | 鲍尔拜普罗克西有限公司 | A receiver for an inductive power transfer system and a method for controlling the receiver |
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| JP4113170B2 (en) * | 2004-09-08 | 2008-07-09 | 株式会社東芝 | Semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103348560A (en) * | 2010-12-29 | 2013-10-09 | 普罗秋斯数字健康公司 | Wirelesss energy sources for integrated circuits |
| CN104854771A (en) * | 2012-10-29 | 2015-08-19 | 鲍尔拜普罗克西有限公司 | A receiver for an inductive power transfer system and a method for controlling the receiver |
| CN103647449A (en) * | 2013-12-18 | 2014-03-19 | 嘉兴中润微电子有限公司 | Boost charge pump circuit |
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