CN106486538A - A kind of reverse blocking IGBT and preparation method thereof - Google Patents

A kind of reverse blocking IGBT and preparation method thereof Download PDF

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Publication number
CN106486538A
CN106486538A CN201510548998.3A CN201510548998A CN106486538A CN 106486538 A CN106486538 A CN 106486538A CN 201510548998 A CN201510548998 A CN 201510548998A CN 106486538 A CN106486538 A CN 106486538A
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CN
China
Prior art keywords
area
substrate
igbt
carrier lifetime
secondth
Prior art date
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CN201510548998.3A
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Chinese (zh)
Inventor
滕渊
朱阳军
卢烁今
田晓丽
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SHANGHAI LIANXING ELECTRONIC CO Ltd
Jiangsu CAS IGBT Technology Co Ltd
Original Assignee
SHANGHAI LIANXING ELECTRONIC CO Ltd
Jiangsu CAS IGBT Technology Co Ltd
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Application filed by SHANGHAI LIANXING ELECTRONIC CO Ltd, Jiangsu CAS IGBT Technology Co Ltd filed Critical SHANGHAI LIANXING ELECTRONIC CO Ltd
Priority to CN201510548998.3A priority Critical patent/CN106486538A/en
Publication of CN106486538A publication Critical patent/CN106486538A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234Bipolar junction transistors [BJT]
    • H01L29/66325Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333Vertical insulated gate bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395Vertical transistors, e.g. vertical IGBT

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

The invention discloses a kind of RB-IGBT and preparation method thereof, this RB-IGBT includes:Substrate, substrate has drift region;Drift region includes:Firstth area, the secondth area and the 3rd area surrounding the secondth area;It is arranged on the main knot in the upper surface in corresponding secondth area of substrate, main knot surrounds the firstth area;It is arranged on the isolation area in the 3rd area;It is arranged on the IGBT cellular in the upper surface in corresponding firstth area of substrate;It is arranged on the collecting zone in substrate lower surface;Wherein, the carrier lifetime in the secondth area is less than the carrier lifetime in the firstth area.Technical solution of the present invention can eliminate the current convergence phenomenon near main knot, and then reduce the electric current density at main knot during conducting, it is to avoid when RB-IGBT turns off, master binds up one's hair and penetrates the problem of avalanche breakdown, and then avoids device to be burned out.

Description

A kind of reverse blocking IGBT and preparation method thereof
Technical field
The present invention relates to semiconductor device processing technology field, in particular, it is related to a kind of reverse blocking IGBT And preparation method thereof.
Background technology
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, abbreviation IGBT) be by The compound full-control type electricity that double pole triode (BJT) and insulating gate type field effect tube (MOSFET) form Pressure drive-type power semiconductor, has the high input impedance of MOSFET element and power transistor concurrently (i.e. Huge transistor, abbreviation GTR) speed-sensitive switch characteristic advantage, therefore, IGBT device extensively should Use the fields such as alternating current generator, converter, Switching Power Supply, lighting circuit, Traction Drive.
The structure of traditional IGBT includes active area and the secondth area.The effect in the secondth area is that raising is positive pressure, The voltage of requirement can be born in positive shutoff.Traditional IGBT is only operated in forward conduction and is turned off with positive Two states.Some application scenarios need IGBT can be operated in the state of reverse shutoff, and traditional IGBT There is no reverse terminal structure, reversely pressure very little.Reverse blocking IGBT (Reverse Blocking-IGBT, Abbreviation RB-IGBT) increase by the 3rd area on the basis of traditional IGBT, that is, reverse terminal structure, makes device The voltage of requirement can be born in reverse shutoff.
With reference to Fig. 1, Fig. 1 is a kind of structural representation of RB-IGBT common in the art, including: Substrate, substrate has N- (the shallow doping of N-type) drift region 14;It is arranged on the IGBT in cellular region in the middle of substrate Cellular;It is arranged in described substrate top surface, surround the main knot 11 of P+ (p-type heavy doping) of described cellular region; It is arranged in described substrate, surround the P+ isolation area 12 of described drift region 14;It is arranged on described substrate following table P+ collecting zone 13 in face.Wherein, drift region 14 is run through in isolation area 12.When specifically used, substrate with unit Need in bag area and the corresponding upper surface of main knot 11 to arrange metal emitting, in collecting zone 13 lower surface shape Become metal collector, in order to the electrical connection of circuit.
RB-IGBT only has middle Yuan Bao area and main knot 11 to connect emitter stage, during RB-IGBT conducting, electricity The collecting zone 13 from the back side for the stream flows into cellular region and the main knot 11 in front, and the electric current of surrounding is to cellular region and master So that electric current density is very high at main knot 11 in concentrating, lead to RB-IGBT when turning off main knot 11 easy avenge Collapse and puncture, even result in device and burn.
Content of the invention
For solving the above problems, the invention provides a kind of reverse blocking IGBT and preparation method thereof, reduce Electric current density at main knot 11 during RB-IGBT conducting, it is to avoid when RB-IGBT turns off, master binds up one's hair and penetrates snowslide The problem puncturing, and then avoid device to be burned out.
For achieving the above object, the present invention provides following scheme:
A kind of RB-IGBT, this RB-IGBT includes:
Substrate, described substrate has drift region;
Described drift region includes:Firstth area;Surround secondth area in described firstth area;And surround described the 3rd area in 2nd area;
It is arranged on the main knot in the upper surface in corresponding described secondth area of described substrate, described main knot surrounds described Firstth area;
It is arranged on the isolation area in described 3rd area;
It is arranged on the IGBT cellular in the upper surface in corresponding described firstth area of described substrate;
It is arranged on the collecting zone in described substrate lower surface;
Wherein, the carrier lifetime in described secondth area is less than the carrier lifetime in described firstth area.
Preferably, in above-mentioned RB-IGBT, the carrier lifetime in described secondth area is not more than described first The 10 of the carrier lifetime in area.
Preferably, in above-mentioned RB-IGBT, also set in the upper surface in corresponding described secondth area of described substrate It is equipped with field limiting ring and cut-off ring;
Wherein, described field limiting ring surrounds described main knot;Described cut-off ring surrounds described field limiting ring.
Present invention also offers a kind of manufacture method of RB-IGBT, this manufacture method includes:
There is provided a substrate, described substrate has drift region;Described drift region includes:Firstth area;Surround institute State secondth area in the firstth area;And surround the 3rd area in described secondth area;
Form main knot and isolation area in described substrate;Described main knot is located at substrate and corresponds to described secondth area Upper surface in, described main knot surround described firstth area;Described isolation area is located in described 3rd area;
Form IGBT cellular in the upper surface in corresponding described firstth area of described substrate;
Form collecting zone in described substrate lower surface;
Carrier lifetime control is carried out to described secondth area so that the carrier lifetime in described secondth area is less than The carrier lifetime in described firstth area.
Preferably, in above-mentioned manufacture method, described carrier lifetime that described secondth area is carried out controls bag Include:
Ion irradiation is carried out to the position in corresponding described secondth area of the upper surface of described substrate, reduces described the The carrier lifetime in 2nd area.
Preferably, in above-mentioned manufacture method, after described ion irradiation, also include:
Adjust the carrier lifetime in described secondth area by annealing process.
Preferably, in above-mentioned manufacture method, the carrier lifetime in described secondth area is not more than described first The 10 of the carrier lifetime in area.
By foregoing description, the RB-IGBT that the present invention provides includes:Substrate, described substrate has Drift region;Described drift region includes:Firstth area;Surround secondth area in described firstth area;And surround institute State the 3rd area in the secondth area;It is arranged on the main knot in the upper surface in corresponding described secondth area of described substrate, institute State main knot and surround described firstth area;It is arranged on the isolation area in described 3rd area;It is arranged on described substrate pair Answer the IGBT cellular in the upper surface in described firstth area;It is arranged on the collecting zone in described substrate lower surface; Wherein, the carrier lifetime in described secondth area is less than the carrier lifetime in described firstth area.Described secondth area Carrier lifetime be less than described firstth area carrier lifetime, so can reduce corresponding with the firstth area Collecting zone injects to the hole current of main knot, reduces isolation area simultaneously and the hole current of main knot is injected, keep away Exempt from isolation area and collecting zone corresponding with the firstth area to a large amount of injection in drift region hole current, eliminate master Current convergence phenomenon near knot, and then reduce the electric current density at main knot during conducting, it is to avoid When RB-IGBT turns off, master binds up one's hair and penetrates the problem of avalanche breakdown, and then avoids device to be burned out.
Brief description
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to reality The accompanying drawing applying required use in example or description of the prior art be briefly described it should be apparent that, below Accompanying drawing in description is only embodiments of the invention, for those of ordinary skill in the art, not On the premise of paying creative work, other accompanying drawings can also be obtained according to the accompanying drawing providing.
Fig. 1 is a kind of structural representation of RB-IGBT common in the art;
A kind of structural representation of RB-IGBT that Fig. 2 provides for the embodiment of the present application;
A kind of schematic flow sheet of the manufacture method of RB-IGBT that Fig. 3-Fig. 6 provides for the embodiment of the present application.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out Clearly and completely describe it is clear that described embodiment is only a part of embodiment of the present invention, and It is not all, of embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art are not doing The every other embodiment being obtained under the premise of going out creative work, broadly falls into the scope of protection of the invention.
As shown in Figure 1, when RB-IGBT turns on, the electric current of cellular region is relatively uniform, but attached in main knot 11 Closely, the current convergence from dorsal edge collecting zone 13 and isolation area 12 is assembled, and leads to electric current density herein Far above average level.Locally high electric current density is unfavorable to device, especially when off, this A little high current density region can shift to an earlier date occurrence dynamics avalanche breakdown, lead to electric current density to sharply increase, be no longer subject to The control of gate turn-off signal, ultimately results in device and burns.In Fig. 1, arrow represents the sense of current and electric current Density.
For solving the above problems, the embodiment of the present application provides a kind of RB-IGBT, with reference to Fig. 2, Fig. 2 A kind of structural representation of the RB-IGBT providing for the embodiment of the present application, this RB-IGBT includes:Lining Bottom 20, described substrate 20 has drift region 24;Described drift region includes:First area 241;Surround described Second area 242 in the first area 241;And surround the 3rd area 243 in described second area 242;It is arranged on institute State the main knot 21 in the upper surface in corresponding described second area 242 of substrate 20, described main knot 21 surrounds described First area 241;It is arranged on the isolation area 22 in described 3rd area 243;It is arranged on described substrate 20 corresponding IGBT cellular in the upper surface in described first area 241;It is arranged on the collection in described substrate 20 lower surface Electric area 23.
Wherein, main knot 21 and isolation area 22 are P+ area.Drift region 24 is N- area.Described second The carrier lifetime in area 242 is less than the carrier lifetime in described first area 241.
In the embodiment of the present application, the carrier lifetime in described second area 242 is not more than described first area 241 Carrier lifetime 10.It is additionally provided with field in the upper surface in corresponding described secondth area of described substrate Limit ring and cut-off ring (described field limiting ring and cut-off ring not shown in Fig. 2).Wherein, described field limiting ring Surround described main knot;Described cut-off ring surrounds described field limiting ring.By arranging in surface over the substrate Field limiting ring and cut-off ring, can strengthen RB-IGBT forward direction voltage endurance capability.
RB-IGBT described in the present embodiment, in its drift region 24, the second area 242 is with respect to the firstth area 241 is the low lifetime region of carrier, and for N- drift region, the diffusion length in hole and concentration can subtract significantly Little, the electric current density in the first area 241 can be made to be significantly lower than the electric current density in the second area 242, significantly drop Low isolation area 22 and hole to the first area 241 of collecting zone 14 and the firstth area 241 corresponding part Current injection quantity, thus greatly reduce the electric current density at main knot 21.In Fig. 2, arrow represents electric current Direction and electric current density.Now, the current densities in main knot 21 and region about are with respect to the firstth area Electric current density in 242 is negligible, and the high current density near main knot 21 will be eliminated, it is to avoid When RB-IGBT turns off, master binds up one's hair and penetrates the problem of avalanche breakdown, and then avoids device to be burned out.Simultaneously permissible Improve voltage endurance capability, improve the range of safety operation of device.
The embodiment of the present application additionally provides a kind of manufacture method of RB-IGBT, with reference to Fig. 3-Fig. 6, Fig. 3- A kind of schematic flow sheet of the manufacture method of RB-IGBT that Fig. 6 provides for the embodiment of the present application, this making Method includes:
Step S11:As shown in figure 3, providing a substrate 20, described substrate 20 has drift region 24;Institute State drift region 24 to include:First area 241;Surround second area 242 in described first area 241;And bag Enclose the 3rd area 243 in described second area 242.
N- substrate can directly be adopted.Now, the first area 241, the second area 242 and the 3rd area 243 It is N- area.
Step S12:As shown in figure 4, forming main knot 21 and isolation area 22 in described substrate 20; Described main knot 21 is located in the upper surface in corresponding described second area 242 of substrate 20, the encirclement of described main knot 21 Described first area 241;Described isolation area 22 is located in described 3rd area 243.
The present embodiment accompanying drawing is the sectional drawing of substrate 20.Main knot 21 and isolation area 22 are loop configuration. Corresponding mask plate can be adopted, by p-type ion doping, form P+'s in the setting regions of substrate The isolation area 22 of main knot 21 and P+.Wherein, the depth of isolation area 22 is more than the depth of main knot.Isolation The depth of area 22 and main knot 21 sets according to device specification, and here does not limit.
Step S13:Form IGBT cellular in the upper surface in corresponding described first area 241 of described substrate.
First area 241 is the cellular region of substrate 20 upper surface central area, is provided with multiple IGBT cellulars, IGBT cellular electrically connects according to design requirement.IGBT structure cell is identical with existing structure, and here is no longer Repeat.
Step S14:As shown in figure 5, forming collecting zone 14 in described substrate 20 lower surface.
Directly the lower surface of substrate 20 can be carried out with p-type ion doping, form certain thickness P+'s Collecting zone 14.Collecting zone 14 is electrically connected with isolation area 22.
Step S15:As shown in fig. 6, carrier lifetime control is carried out to described second area 242 so that institute The carrier lifetime stating the second area 242 is less than the carrier lifetime in described first area 241.Ultimately form RB-IGBT structure is identical with structure shown in Fig. 2.
Described carrier lifetime that described secondth area is carried out controls inclusion:Upper surface pair to described substrate 20 The position answering described second area 242 carries out ion irradiation, reduces the carrier lifetime in described second area 242. As shown by the arrows in Figure 6, energetic particle beam can be adopted, and by corresponding mask plate to the second area 242 Carry out ion irradiation, to reduce the carrier lifetime in the second area 242.
After described ion irradiation, this manufacture method also includes:Adjust described by annealing process The carrier lifetime in 2nd area.Annealing process can weaken or eliminate ion irradiation to the drift region carrier longevity The impact of life.The secondth area 242 carrier longevity can be adjusted with the cooperation of ion irradiation technique by annealing process Life is in the numerical range setting.The carrier lifetime arranging described second area 242 is not more than described firstth area The 10 of 241 carrier lifetime so that the first area 241 can preferably reduce main knot 21 and Its neighbouring electric current density.General, the carrier lifetime in setting the second area 242 is the first area 241 / 10 to ten/tens of carrier lifetime.
Its processing technology of RB-IGBT described in the embodiment of the present application is simultaneous with its processing technology of existing RB-IGBT Hold, life control technical maturity is carried out to semiconductor element by ion irradiation, difficulty of processing is little, cost Low.Described manufacture method does not change structure hard, need not design new domain, process is simple.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses The present invention.Multiple modifications to these embodiments will be aobvious and easy for those skilled in the art See, generic principles defined herein can without departing from the spirit or scope of the present invention, Realize in other embodiments.Therefore, the present invention is not intended to be limited to the embodiments shown herein, And it is to fit to the wide scope consistent with principles disclosed herein and features of novelty.

Claims (7)

1. a kind of RB-IGBT is it is characterised in that include:
Substrate, described substrate has drift region;
Described drift region includes:Firstth area;Surround secondth area in described firstth area;And surround described the 3rd area in 2nd area;
It is arranged on the main knot in the upper surface in corresponding described secondth area of described substrate, described main knot surrounds described Firstth area;
It is arranged on the isolation area in described 3rd area;
It is arranged on the IGBT cellular in the upper surface in corresponding described firstth area of described substrate;
It is arranged on the collecting zone in described substrate lower surface;
Wherein, the carrier lifetime in described secondth area is less than the carrier lifetime in described firstth area.
2. RB-IGBT according to claim 1 is it is characterised in that the carrier in described secondth area Life-span is not more than the 10 of the carrier lifetime in described firstth area.
3. RB-IGBT according to claim 1 and 2 is it is characterised in that described substrate corresponds to institute It is additionally provided with field limiting ring and cut-off ring in the upper surface stating the secondth area;
Wherein, described field limiting ring surrounds described main knot;Described cut-off ring surrounds described field limiting ring.
4. a kind of manufacture method of RB-IGBT is it is characterised in that include:
There is provided a substrate, described substrate has drift region;Described drift region includes:Firstth area;Surround institute State secondth area in the firstth area;And surround the 3rd area in described secondth area;
Form main knot and isolation area in described substrate;Described main knot is located at substrate and corresponds to described secondth area Upper surface in, described main knot surround described firstth area;Described isolation area is located in described 3rd area;
Form IGBT cellular in the upper surface in corresponding described firstth area of described substrate;
Form collecting zone in described substrate lower surface;
Carrier lifetime control is carried out to described secondth area so that the carrier lifetime in described secondth area is less than The carrier lifetime in described firstth area.
5. manufacture method according to claim 4 is it is characterised in that described enter to described secondth area Row carrier lifetime controls inclusion:
Ion irradiation is carried out to the position in corresponding described secondth area of the upper surface of described substrate, reduces described the The carrier lifetime in 2nd area.
6. manufacture method according to claim 5 is it is characterised in that through described ion irradiation Afterwards, also include:
Adjust the carrier lifetime in described secondth area by annealing process.
7. manufacture method according to claim 4 is it is characterised in that the carrier in described secondth area Life-span is not more than the 10 of the carrier lifetime in described firstth area.
CN201510548998.3A 2015-08-31 2015-08-31 A kind of reverse blocking IGBT and preparation method thereof Pending CN106486538A (en)

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Application Number Priority Date Filing Date Title
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108155228A (en) * 2017-12-18 2018-06-12 广东美的制冷设备有限公司 Igbt, IPM modules and air conditioner
CN108365007A (en) * 2018-04-23 2018-08-03 广东美的制冷设备有限公司 Insulated gate bipolar transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108155228A (en) * 2017-12-18 2018-06-12 广东美的制冷设备有限公司 Igbt, IPM modules and air conditioner
CN108365007A (en) * 2018-04-23 2018-08-03 广东美的制冷设备有限公司 Insulated gate bipolar transistor

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Application publication date: 20170308