CN106486538A - A kind of reverse blocking IGBT and preparation method thereof - Google Patents
A kind of reverse blocking IGBT and preparation method thereof Download PDFInfo
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- CN106486538A CN106486538A CN201510548998.3A CN201510548998A CN106486538A CN 106486538 A CN106486538 A CN 106486538A CN 201510548998 A CN201510548998 A CN 201510548998A CN 106486538 A CN106486538 A CN 106486538A
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- 230000000903 blocking effect Effects 0.000 title description 5
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 238000002955 isolation Methods 0.000 claims abstract description 23
- 230000001413 cellular effect Effects 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 5
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses a kind of RB-IGBT and preparation method thereof, this RB-IGBT includes：Substrate, substrate has drift region；Drift region includes：Firstth area, the secondth area and the 3rd area surrounding the secondth area；It is arranged on the main knot in the upper surface in corresponding secondth area of substrate, main knot surrounds the firstth area；It is arranged on the isolation area in the 3rd area；It is arranged on the IGBT cellular in the upper surface in corresponding firstth area of substrate；It is arranged on the collecting zone in substrate lower surface；Wherein, the carrier lifetime in the secondth area is less than the carrier lifetime in the firstth area.Technical solution of the present invention can eliminate the current convergence phenomenon near main knot, and then reduce the electric current density at main knot during conducting, it is to avoid when RB-IGBT turns off, master binds up one's hair and penetrates the problem of avalanche breakdown, and then avoids device to be burned out.
Description
Technical field
The present invention relates to semiconductor device processing technology field, in particular, it is related to a kind of reverse blocking IGBT
And preparation method thereof.
Background technology
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, abbreviation IGBT) be by
The compound full-control type electricity that double pole triode (BJT) and insulating gate type field effect tube (MOSFET) form
Pressure drive-type power semiconductor, has the high input impedance of MOSFET element and power transistor concurrently (i.e.
Huge transistor, abbreviation GTR) speed-sensitive switch characteristic advantage, therefore, IGBT device extensively should
Use the fields such as alternating current generator, converter, Switching Power Supply, lighting circuit, Traction Drive.
The structure of traditional IGBT includes active area and the secondth area.The effect in the secondth area is that raising is positive pressure,
The voltage of requirement can be born in positive shutoff.Traditional IGBT is only operated in forward conduction and is turned off with positive
Two states.Some application scenarios need IGBT can be operated in the state of reverse shutoff, and traditional IGBT
There is no reverse terminal structure, reversely pressure very little.Reverse blocking IGBT (Reverse Blocking-IGBT,
Abbreviation RB-IGBT) increase by the 3rd area on the basis of traditional IGBT, that is, reverse terminal structure, makes device
The voltage of requirement can be born in reverse shutoff.
With reference to Fig. 1, Fig. 1 is a kind of structural representation of RB-IGBT common in the art, including：
Substrate, substrate has N- (the shallow doping of N-type) drift region 14；It is arranged on the IGBT in cellular region in the middle of substrate
Cellular；It is arranged in described substrate top surface, surround the main knot 11 of P+ (p-type heavy doping) of described cellular region；
It is arranged in described substrate, surround the P+ isolation area 12 of described drift region 14；It is arranged on described substrate following table
P+ collecting zone 13 in face.Wherein, drift region 14 is run through in isolation area 12.When specifically used, substrate with unit
Need in bag area and the corresponding upper surface of main knot 11 to arrange metal emitting, in collecting zone 13 lower surface shape
Become metal collector, in order to the electrical connection of circuit.
RB-IGBT only has middle Yuan Bao area and main knot 11 to connect emitter stage, during RB-IGBT conducting, electricity
The collecting zone 13 from the back side for the stream flows into cellular region and the main knot 11 in front, and the electric current of surrounding is to cellular region and master
So that electric current density is very high at main knot 11 in concentrating, lead to RB-IGBT when turning off main knot 11 easy avenge
Collapse and puncture, even result in device and burn.
Content of the invention
For solving the above problems, the invention provides a kind of reverse blocking IGBT and preparation method thereof, reduce
Electric current density at main knot 11 during RB-IGBT conducting, it is to avoid when RB-IGBT turns off, master binds up one's hair and penetrates snowslide
The problem puncturing, and then avoid device to be burned out.
For achieving the above object, the present invention provides following scheme：
A kind of RB-IGBT, this RB-IGBT includes：
Substrate, described substrate has drift region；
Described drift region includes：Firstth area；Surround secondth area in described firstth area；And surround described the
3rd area in 2nd area；
It is arranged on the main knot in the upper surface in corresponding described secondth area of described substrate, described main knot surrounds described
Firstth area；
It is arranged on the isolation area in described 3rd area；
It is arranged on the IGBT cellular in the upper surface in corresponding described firstth area of described substrate；
It is arranged on the collecting zone in described substrate lower surface；
Wherein, the carrier lifetime in described secondth area is less than the carrier lifetime in described firstth area.
Preferably, in above-mentioned RB-IGBT, the carrier lifetime in described secondth area is not more than described first
The 10 of the carrier lifetime in area.
Preferably, in above-mentioned RB-IGBT, also set in the upper surface in corresponding described secondth area of described substrate
It is equipped with field limiting ring and cut-off ring；
Wherein, described field limiting ring surrounds described main knot；Described cut-off ring surrounds described field limiting ring.
Present invention also offers a kind of manufacture method of RB-IGBT, this manufacture method includes：
There is provided a substrate, described substrate has drift region；Described drift region includes：Firstth area；Surround institute
State secondth area in the firstth area；And surround the 3rd area in described secondth area；
Form main knot and isolation area in described substrate；Described main knot is located at substrate and corresponds to described secondth area
Upper surface in, described main knot surround described firstth area；Described isolation area is located in described 3rd area；
Form IGBT cellular in the upper surface in corresponding described firstth area of described substrate；
Form collecting zone in described substrate lower surface；
Carrier lifetime control is carried out to described secondth area so that the carrier lifetime in described secondth area is less than
The carrier lifetime in described firstth area.
Preferably, in above-mentioned manufacture method, described carrier lifetime that described secondth area is carried out controls bag
Include：
Ion irradiation is carried out to the position in corresponding described secondth area of the upper surface of described substrate, reduces described the
The carrier lifetime in 2nd area.
Preferably, in above-mentioned manufacture method, after described ion irradiation, also include：
Adjust the carrier lifetime in described secondth area by annealing process.
Preferably, in above-mentioned manufacture method, the carrier lifetime in described secondth area is not more than described first
The 10 of the carrier lifetime in area.
By foregoing description, the RB-IGBT that the present invention provides includes：Substrate, described substrate has
Drift region；Described drift region includes：Firstth area；Surround secondth area in described firstth area；And surround institute
State the 3rd area in the secondth area；It is arranged on the main knot in the upper surface in corresponding described secondth area of described substrate, institute
State main knot and surround described firstth area；It is arranged on the isolation area in described 3rd area；It is arranged on described substrate pair
Answer the IGBT cellular in the upper surface in described firstth area；It is arranged on the collecting zone in described substrate lower surface；
Wherein, the carrier lifetime in described secondth area is less than the carrier lifetime in described firstth area.Described secondth area
Carrier lifetime be less than described firstth area carrier lifetime, so can reduce corresponding with the firstth area
Collecting zone injects to the hole current of main knot, reduces isolation area simultaneously and the hole current of main knot is injected, keep away
Exempt from isolation area and collecting zone corresponding with the firstth area to a large amount of injection in drift region hole current, eliminate master
Current convergence phenomenon near knot, and then reduce the electric current density at main knot during conducting, it is to avoid
When RB-IGBT turns off, master binds up one's hair and penetrates the problem of avalanche breakdown, and then avoids device to be burned out.
Brief description
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to reality
The accompanying drawing applying required use in example or description of the prior art be briefly described it should be apparent that, below
Accompanying drawing in description is only embodiments of the invention, for those of ordinary skill in the art, not
On the premise of paying creative work, other accompanying drawings can also be obtained according to the accompanying drawing providing.
Fig. 1 is a kind of structural representation of RB-IGBT common in the art；
A kind of structural representation of RB-IGBT that Fig. 2 provides for the embodiment of the present application；
A kind of schematic flow sheet of the manufacture method of RB-IGBT that Fig. 3-Fig. 6 provides for the embodiment of the present application.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out
Clearly and completely describe it is clear that described embodiment is only a part of embodiment of the present invention, and
It is not all, of embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art are not doing
The every other embodiment being obtained under the premise of going out creative work, broadly falls into the scope of protection of the invention.
As shown in Figure 1, when RB-IGBT turns on, the electric current of cellular region is relatively uniform, but attached in main knot 11
Closely, the current convergence from dorsal edge collecting zone 13 and isolation area 12 is assembled, and leads to electric current density herein
Far above average level.Locally high electric current density is unfavorable to device, especially when off, this
A little high current density region can shift to an earlier date occurrence dynamics avalanche breakdown, lead to electric current density to sharply increase, be no longer subject to
The control of gate turn-off signal, ultimately results in device and burns.In Fig. 1, arrow represents the sense of current and electric current
Density.
For solving the above problems, the embodiment of the present application provides a kind of RB-IGBT, with reference to Fig. 2, Fig. 2
A kind of structural representation of the RB-IGBT providing for the embodiment of the present application, this RB-IGBT includes：Lining
Bottom 20, described substrate 20 has drift region 24；Described drift region includes：First area 241；Surround described
Second area 242 in the first area 241；And surround the 3rd area 243 in described second area 242；It is arranged on institute
State the main knot 21 in the upper surface in corresponding described second area 242 of substrate 20, described main knot 21 surrounds described
First area 241；It is arranged on the isolation area 22 in described 3rd area 243；It is arranged on described substrate 20 corresponding
IGBT cellular in the upper surface in described first area 241；It is arranged on the collection in described substrate 20 lower surface
Electric area 23.
Wherein, main knot 21 and isolation area 22 are P+ area.Drift region 24 is N- area.Described second
The carrier lifetime in area 242 is less than the carrier lifetime in described first area 241.
In the embodiment of the present application, the carrier lifetime in described second area 242 is not more than described first area 241
Carrier lifetime 10.It is additionally provided with field in the upper surface in corresponding described secondth area of described substrate
Limit ring and cut-off ring (described field limiting ring and cut-off ring not shown in Fig. 2).Wherein, described field limiting ring
Surround described main knot；Described cut-off ring surrounds described field limiting ring.By arranging in surface over the substrate
Field limiting ring and cut-off ring, can strengthen RB-IGBT forward direction voltage endurance capability.
RB-IGBT described in the present embodiment, in its drift region 24, the second area 242 is with respect to the firstth area
241 is the low lifetime region of carrier, and for N- drift region, the diffusion length in hole and concentration can subtract significantly
Little, the electric current density in the first area 241 can be made to be significantly lower than the electric current density in the second area 242, significantly drop
Low isolation area 22 and hole to the first area 241 of collecting zone 14 and the firstth area 241 corresponding part
Current injection quantity, thus greatly reduce the electric current density at main knot 21.In Fig. 2, arrow represents electric current
Direction and electric current density.Now, the current densities in main knot 21 and region about are with respect to the firstth area
Electric current density in 242 is negligible, and the high current density near main knot 21 will be eliminated, it is to avoid
When RB-IGBT turns off, master binds up one's hair and penetrates the problem of avalanche breakdown, and then avoids device to be burned out.Simultaneously permissible
Improve voltage endurance capability, improve the range of safety operation of device.
The embodiment of the present application additionally provides a kind of manufacture method of RB-IGBT, with reference to Fig. 3-Fig. 6, Fig. 3-
A kind of schematic flow sheet of the manufacture method of RB-IGBT that Fig. 6 provides for the embodiment of the present application, this making
Method includes：
Step S11：As shown in figure 3, providing a substrate 20, described substrate 20 has drift region 24；Institute
State drift region 24 to include：First area 241；Surround second area 242 in described first area 241；And bag
Enclose the 3rd area 243 in described second area 242.
N- substrate can directly be adopted.Now, the first area 241, the second area 242 and the 3rd area 243
It is N- area.
Step S12：As shown in figure 4, forming main knot 21 and isolation area 22 in described substrate 20；
Described main knot 21 is located in the upper surface in corresponding described second area 242 of substrate 20, the encirclement of described main knot 21
Described first area 241；Described isolation area 22 is located in described 3rd area 243.
The present embodiment accompanying drawing is the sectional drawing of substrate 20.Main knot 21 and isolation area 22 are loop configuration.
Corresponding mask plate can be adopted, by p-type ion doping, form P+'s in the setting regions of substrate
The isolation area 22 of main knot 21 and P+.Wherein, the depth of isolation area 22 is more than the depth of main knot.Isolation
The depth of area 22 and main knot 21 sets according to device specification, and here does not limit.
Step S13：Form IGBT cellular in the upper surface in corresponding described first area 241 of described substrate.
First area 241 is the cellular region of substrate 20 upper surface central area, is provided with multiple IGBT cellulars,
IGBT cellular electrically connects according to design requirement.IGBT structure cell is identical with existing structure, and here is no longer
Repeat.
Step S14：As shown in figure 5, forming collecting zone 14 in described substrate 20 lower surface.
Directly the lower surface of substrate 20 can be carried out with p-type ion doping, form certain thickness P+'s
Collecting zone 14.Collecting zone 14 is electrically connected with isolation area 22.
Step S15：As shown in fig. 6, carrier lifetime control is carried out to described second area 242 so that institute
The carrier lifetime stating the second area 242 is less than the carrier lifetime in described first area 241.Ultimately form
RB-IGBT structure is identical with structure shown in Fig. 2.
Described carrier lifetime that described secondth area is carried out controls inclusion：Upper surface pair to described substrate 20
The position answering described second area 242 carries out ion irradiation, reduces the carrier lifetime in described second area 242.
As shown by the arrows in Figure 6, energetic particle beam can be adopted, and by corresponding mask plate to the second area 242
Carry out ion irradiation, to reduce the carrier lifetime in the second area 242.
After described ion irradiation, this manufacture method also includes：Adjust described by annealing process
The carrier lifetime in 2nd area.Annealing process can weaken or eliminate ion irradiation to the drift region carrier longevity
The impact of life.The secondth area 242 carrier longevity can be adjusted with the cooperation of ion irradiation technique by annealing process
Life is in the numerical range setting.The carrier lifetime arranging described second area 242 is not more than described firstth area
The 10 of 241 carrier lifetime so that the first area 241 can preferably reduce main knot 21 and
Its neighbouring electric current density.General, the carrier lifetime in setting the second area 242 is the first area 241
/ 10 to ten/tens of carrier lifetime.
Its processing technology of RB-IGBT described in the embodiment of the present application is simultaneous with its processing technology of existing RB-IGBT
Hold, life control technical maturity is carried out to semiconductor element by ion irradiation, difficulty of processing is little, cost
Low.Described manufacture method does not change structure hard, need not design new domain, process is simple.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses
The present invention.Multiple modifications to these embodiments will be aobvious and easy for those skilled in the art
See, generic principles defined herein can without departing from the spirit or scope of the present invention,
Realize in other embodiments.Therefore, the present invention is not intended to be limited to the embodiments shown herein,
And it is to fit to the wide scope consistent with principles disclosed herein and features of novelty.
Claims (7)
1. a kind of RB-IGBT is it is characterised in that include：
Substrate, described substrate has drift region；
Described drift region includes：Firstth area；Surround secondth area in described firstth area；And surround described the
3rd area in 2nd area；
It is arranged on the main knot in the upper surface in corresponding described secondth area of described substrate, described main knot surrounds described
Firstth area；
It is arranged on the isolation area in described 3rd area；
It is arranged on the IGBT cellular in the upper surface in corresponding described firstth area of described substrate；
It is arranged on the collecting zone in described substrate lower surface；
Wherein, the carrier lifetime in described secondth area is less than the carrier lifetime in described firstth area.
2. RB-IGBT according to claim 1 is it is characterised in that the carrier in described secondth area
Life-span is not more than the 10 of the carrier lifetime in described firstth area.
3. RB-IGBT according to claim 1 and 2 is it is characterised in that described substrate corresponds to institute
It is additionally provided with field limiting ring and cut-off ring in the upper surface stating the secondth area；
Wherein, described field limiting ring surrounds described main knot；Described cut-off ring surrounds described field limiting ring.
4. a kind of manufacture method of RB-IGBT is it is characterised in that include：
There is provided a substrate, described substrate has drift region；Described drift region includes：Firstth area；Surround institute
State secondth area in the firstth area；And surround the 3rd area in described secondth area；
Form main knot and isolation area in described substrate；Described main knot is located at substrate and corresponds to described secondth area
Upper surface in, described main knot surround described firstth area；Described isolation area is located in described 3rd area；
Form IGBT cellular in the upper surface in corresponding described firstth area of described substrate；
Form collecting zone in described substrate lower surface；
Carrier lifetime control is carried out to described secondth area so that the carrier lifetime in described secondth area is less than
The carrier lifetime in described firstth area.
5. manufacture method according to claim 4 is it is characterised in that described enter to described secondth area
Row carrier lifetime controls inclusion：
Ion irradiation is carried out to the position in corresponding described secondth area of the upper surface of described substrate, reduces described the
The carrier lifetime in 2nd area.
6. manufacture method according to claim 5 is it is characterised in that through described ion irradiation
Afterwards, also include：
Adjust the carrier lifetime in described secondth area by annealing process.
7. manufacture method according to claim 4 is it is characterised in that the carrier in described secondth area
Life-span is not more than the 10 of the carrier lifetime in described firstth area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510548998.3A CN106486538A (en) | 2015-08-31 | 2015-08-31 | A kind of reverse blocking IGBT and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510548998.3A CN106486538A (en) | 2015-08-31 | 2015-08-31 | A kind of reverse blocking IGBT and preparation method thereof |
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| CN106486538A true CN106486538A (en) | 2017-03-08 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108155228A (en) * | 2017-12-18 | 2018-06-12 | 广东美的制冷设备有限公司 | Igbt, IPM modules and air conditioner |
| CN108365007A (en) * | 2018-04-23 | 2018-08-03 | 广东美的制冷设备有限公司 | Insulated gate bipolar transistor |
-
2015
- 2015-08-31 CN CN201510548998.3A patent/CN106486538A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108155228A (en) * | 2017-12-18 | 2018-06-12 | 广东美的制冷设备有限公司 | Igbt, IPM modules and air conditioner |
| CN108365007A (en) * | 2018-04-23 | 2018-08-03 | 广东美的制冷设备有限公司 | Insulated gate bipolar transistor |
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Application publication date: 20170308 |