CN106486158A - Memory and method to infrared photon memory storage - Google Patents
Memory and method to infrared photon memory storage Download PDFInfo
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- CN106486158A CN106486158A CN201610912744.XA CN201610912744A CN106486158A CN 106486158 A CN106486158 A CN 106486158A CN 201610912744 A CN201610912744 A CN 201610912744A CN 106486158 A CN106486158 A CN 106486158A
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Abstract
A kind of memory to infrared photon memory storage and method is embodiments provided, the memory includes：For conductive conductive substrates；For carrying out the vanadium dioxide film of memory storage to infrared photon；For the positive and negative electrode for making conductive substrates conductive；For providing electric current to change the direct voltage source of the infrared spectrum transmitance of vanadium dioxide film, and the pulse voltage source regulated and controled by infrared photon memory storage state for vanadium dioxide film for conductive substrates.Vanadium dioxide film is arranged in conductive substrates, and positive and negative electrode is arranged in conductive substrates and positioned at the relative both sides of vanadium dioxide film, and direct voltage source and pulse voltage source are series between positive and negative electrode.By direct voltage source, the transmitance of continuous regulation and control infrared spectrum is adjusted, and then by pulse voltage source is adjusted, the memory storage to infrared photon is realized, reduces the manufacture difficulty of optical memory.
Description
Technical field
The present invention relates to field of optical storage technology, in particular to a kind of memory to infrared photon memory storage
And method.
Background technology
Big data epoch data capacity and importance are constantly lifted, and capacity for storage system, performance, reliability and are become
The higher requirement of this proposition.The optical storage technology for arising at the historic moment is widely used.
The wavelength that current optical memory is directed to is all the wavelength in visible-range, and the short laser of wavelength can compare wavelength
Long laser more accurately carries out imprinting to storage medium.But the generation process of the visible ray of particular range of wavelengths is more complicated,
And the infrared light for generating particular range of wavelengths is easier with respect to the visible ray for generating other wave-length coverages.How using memory
To infrared photon memory storage, the manufacture difficulty for reducing optical memory is a problem demanding prompt solution.
Content of the invention
In order to overcome above-mentioned deficiency of the prior art, the technical problem to be solved is to provide one kind to infrared
The memory of photon memory storage and method, its can realize continuous regulation and control of the vanadium dioxide film to infrared spectrum, Jin Ershi
The existing memory storage to infrared photon.
For memory, The embodiment provides a kind of memory to infrared photon memory storage, described
Memory includes：
For conductive conductive substrates；
For carrying out the vanadium dioxide film of memory storage to infrared photon；
For the positive and negative electrode for making the conductive substrates conductive；
For providing electric current to change the straight of the infrared spectrum transmitance of the vanadium dioxide film for the conductive substrates
Stream voltage source, and
The pulse voltage source regulated and controled by infrared photon memory storage state for the vanadium dioxide film；
The vanadium dioxide film is arranged in the conductive substrates, and the positive and negative electrode is arranged in the conductive substrates
And positioned at the relative both sides of the vanadium dioxide film, the direct voltage source and the pulse voltage source are series at described positive and negative
Between electrode.
In preferred embodiments of the present invention, the vanadium dioxide film is by way of deposition or sol-gel spin coating
It is arranged in the conductive substrates.
In preferred embodiments of the present invention, the conductive substrates are electrically conducting transparent substrate.
In preferred embodiments of the present invention, the conductive substrates are by indium doping tin oxide, fluorine-doped tin oxide, aluminium doping
Zinc oxide or silicon doping gallium nitride any one make.
In preferred embodiments of the present invention, the positive and negative electrode is arranged in the conductive substrates by sputtering method.
In preferred embodiments of the present invention, the positive and negative electrode is made of gold.
For storage method, The embodiment provides a kind of be applied to above-mentioned memory infrared photon is remembered
The method for recalling storage, methods described include：
The voltage of the pulse voltage source is adjusted, the voltage for making the pulse voltage source is 0V；
The vanadium dioxide film in the conductive substrates is caused by adjusting the voltage of the direct voltage source
Undergo phase transition, so that the infrared spectrum transmitance of the vanadium dioxide film is less than default infrared spectrum transmitance；
The voltage of the direct voltage source is maintained the voltage of critical transformation temperature；
By adjusting the voltage signal of the pulse voltage source, the infrared spectrum transmitance to the vanadium dioxide film is entered
Row is adjusted, to realize the regulation and control to infrared photon memory storage state.
In preferred embodiments of the present invention, caused positioned at described by adjusting the voltage of the direct voltage source described
In the step of vanadium dioxide film in conductive substrates undergoes phase transition：
The vanadium dioxide film is changed into metallic conductor by insulator.
In preferred embodiments of the present invention, the vanadium dioxide film before phase transformation is monoclinic structure, after phase transformation
The vanadium dioxide film be tetragonal crystalline structure.
In preferred embodiments of the present invention, the voltage signal of the pulse voltage source includes：
The voltage swing of pulse voltage source, the voltage-duration of pulse voltage source and intermittent time.
In terms of existing technologies, the present invention is provided memory and method to infrared photon memory storage, have
Following beneficial effect：
In memory to infrared photon memory storage, vanadium dioxide film is arranged in conductive substrates, and positive and negative electrode sets
Put in conductive substrates and positioned at the relative both sides of vanadium dioxide film, direct voltage source and the pulse voltage source are just series at
Between negative electrode.Due to sensitivity characteristic of the vanadium dioxide to infrared photon, the memory can be used for storing infrared photon.In pulse
When the voltage of voltage source is 0V, DC source voltage is adjusted so that vanadium dioxide film undergoes phase transition, thin so as to adjust vanadium dioxide
The infrared spectrum transmitance of film.The voltage of direct voltage source is maintained the voltage of critical transformation temperature, adjusts pulse voltage source
Voltage signal, is adjusted with the infrared spectrum transmitance of vanadium dioxide film, to realize the memory storage to infrared photon, drop
The low manufacture difficulty of optical memory.
Description of the drawings
In order to be illustrated more clearly that the technical scheme of the embodiment of the present invention, below by to be used attached needed for embodiment
Figure is briefly described, it will be appreciated that the following drawings illustrate only certain embodiments of the present invention, and it is right to be therefore not construed as
The restriction of scope, for those of ordinary skill in the art, on the premise of not paying creative work, can also be according to this
A little accompanying drawings obtain other related accompanying drawings.
Fig. 1 is the memory construction schematic diagram to infrared photon memory storage provided in an embodiment of the present invention.
Fig. 2 is the schematic flow sheet of the method to infrared photon memory storage provided in an embodiment of the present invention.
Fig. 3 be vanadium dioxide provided in an embodiment of the present invention/gallium nitride heterojunction thin-film material infrared spectrum transmitance with
External bias size variation curve map.
Fig. 4 is that vanadium dioxide provided in an embodiment of the present invention/gallium nitride heterojunction thin-film material visible ray-near infrared light is saturating
Rate is crossed with external bias size variation curve map.
Fig. 5 is infrared waves of the vanadium dioxide provided in an embodiment of the present invention/gallium nitride heterojunction thin-film material in 1800nm
Strong point, transmitance graph of relation over time under different bias voltages.
Fig. 6 is infrared memory storage schematic diagram provided in an embodiment of the present invention.
Fig. 7 is the adjustment curve of photon memory state provided in an embodiment of the present invention.
Fig. 8 is the adjustment curve of the photon memory state under difference original state provided in an embodiment of the present invention.
Icon：100- memory；110- substrate；120- conductive substrates；130- positive and negative electrode；140- vanadium dioxide film；
150- direct voltage source；160- pulse voltage source.
Specific embodiment
Purpose, technical scheme and advantage for making the embodiment of the present invention is clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
The a part of embodiment of the present invention, rather than whole embodiments.The present invention generally described and illustrated in accompanying drawing herein is implemented
The component of example can be arranged and be designed with a variety of configurations.
Therefore, the detailed description of embodiments of the invention below to providing in the accompanying drawings is not intended to limit claimed
The scope of the present invention, but be merely representative of the selected embodiment of the present invention.Based on the embodiment in the present invention, this area is common
The every other embodiment obtained under the premise of creative work is not made by technical staff, belongs to the model of present invention protection
Enclose.
It should be noted that：Similar label and letter represent similar terms in following accompanying drawing, therefore, once a certain Xiang Yi
It is defined in individual accompanying drawing, then which need not be defined further and explain in subsequent accompanying drawing.
In describing the invention, it should be noted that term " " center ", " on ", D score, "left", "right", " vertical ",
The orientation of instruction such as " level ", " interior ", " outward " or position relationship be based on orientation shown in the drawings or position relationship, or should
Invention product using when the orientation usually put or position relationship, be for only for ease of the description present invention and simplify description, and not
It is to indicate or imply that the device of indication or element must be with specific orientation, with specific azimuth configuration and operation, therefore not
It is understood that as limitation of the present invention.Additionally, term " first ", " second ", " the 3rd " etc. are only used for distinguishing description, and can not manage
Solve as indicating or implying relative importance.
Additionally, the term such as term " level ", " vertical ", " pendency " is not offered as requiring part abswolute level or pendency, and
It is to be slightly tilted.As " level " only refers to for its direction relative " vertical " more level, it is not the expression structure
Must be fully horizontal, but can be slightly tilted.
In describing the invention, in addition it is also necessary to explanation, unless otherwise clearly defined and limited, term " setting ",
" installation ", " being connected ", " connection " should be interpreted broadly, for example, it may be fixedly connected, or be detachably connected, or one
The connection of body ground；Can be mechanically connected, or electrically connect；Can be joined directly together, it is also possible to indirect by intermediary
It is connected, can is the connection of two element internals.For the ordinary skill in the art, can be with concrete condition understanding
State term concrete meaning in the present invention.
How a kind of memory to infrared photon memory storage and method are provided, are that those skilled in the art need to solve
Technical problem.
Below in conjunction with the accompanying drawings, some embodiments of the present invention are elaborated.In the case of not conflicting, below
Feature in embodiment and embodiment can be combined with each other.
Refer to the memory 100 to infrared photon memory storage that Fig. 1, Fig. 1 are present pre-ferred embodiments offers to tie
Structure schematic diagram.The memory 100 includes substrate 110, conductive substrates 120, positive and negative electrode 130, vanadium dioxide film 140, straight
Stream voltage source 150 and pulse voltage source 160.
The conductive substrates 120 are arranged on a substrate 110, and the substrate 110 is made up of alundum (Al2O3).The titanium dioxide
Vanadium film 140 is arranged in the conductive substrates 120.The positive and negative electrode 130 is arranged in the conductive substrates 120 and is located at
The relative both sides of the vanadium dioxide film 140, the direct voltage source 150 and the pulse voltage source 160 are series at described
Between positive and negative electrode 130.
In order to not affect the optical property of vanadium dioxide film 140, conductive substrates 120 described in present pre-ferred embodiments
For electrically conducting transparent substrate.The material of the conductive substrates 120 has relatively to the light wave in the wave-length coverage of visible ray to infrared light
High transmitance (e.g., more than 75%) and good electric conductivity (e.g., resistivity is less than 0.1 Ω/cm).
Modal backing material is nitride at present, and gallium nitride-based semiconductor is in short-wave long light-emitting diode, laser instrument
And in terms of ultraviolet detector, and high temperature microelectronic component, show wide application prospect.Gallium nitride material have gallium nitride,
The materials such as aluminium nitride, indium nitride and its alloy.In embodiments of the invention, it is contemplated that the lattice matching issues with vanadium dioxide, institute
State any one system of gallium nitride of conductive substrates 120 by indium doping tin oxide, fluorine-doped tin oxide, aluminium doping oxygen zinc or silicon doping
Become.
In present pre-ferred embodiments, the vanadium dioxide film 140 is being arranged in the conductive substrates 120 it
Before, first will be ultrasonically treated five minutes in alcohol, deionized water then fast with nitrogen to the substrate 110 and the conductive substrates 120
Speed is dried up.In order to the impurity in the conductive substrates 120 is washed, property of the impurity to the vanadium dioxide film 140 is prevented
Produce impact.
In the conductive substrates 120 after cleaning, the dioxy is set by way of deposition or sol-gel spin coating
Change vanadium film 140.Spin coating is the abbreviation for rotating semar technique, by controlling the time of spin coating, rotating speed, dropping liquid amount and solution used
Concentration, viscosity to be controlling the thickness of film forming.In present pre-ferred embodiments in a kind of specific embodiment, the vanadium dioxide
The thickness range of film 140 is 20nm～40nm, the thickness of the vanadium dioxide film 140 select 30nm it is further preferred that.
In present pre-ferred embodiments, the positive and negative electrode 130 is arranged on the conductive substrates 120 by sputtering method
On.The conductive substrates 120 are reduced with the contact resistance of the direct voltage source 150, pulse voltage source 160.The sputtering side
Method is to use charged particle bombardment target, during the Ions Bombardment surface of solids of acceleration, occur surface atom collide and occur energy and
The transfer of momentum, makes target atom escape from surface and be deposited on backing material.
In present pre-ferred embodiments, the positive and negative electrode 130 is made using the excellent metal material of electric conductivity, preferably
Ground, the positive and negative electrode 130 are fabricated by using gold.
The direct voltage source 150 is the device for forming steady current in holding circuit, is that whole memory 100 is provided partially
Put voltage.By adjusting the direct voltage source 150, thus it is possible to vary the infrared spectrum transmitance of the vanadium dioxide film 140.
The pulse voltage source 160 is that the memory 100 provides pulse voltage.Voltage in the pulse voltage source 160
Of short duration mutation is had, common pulse shape has a rectangular pulse, square-wave pulse, spike, sawtooth pulse, step pulse,
Have a rest sine pulse etc., pulse voltage has mutability and discontinuity.A kind of specific embodiment of present pre-ferred embodiments
In, the voltage pulse that the pulse voltage source 160 is adopted is rectangular pulse.
Present pre-ferred embodiments additionally provide a kind of be applied to above-mentioned memory 100 to infrared photon memory storage
Method.Fig. 2 is refer to, the idiographic flow of the method to infrared photon memory storage is as follows.
Step S111, adjusts the voltage of the pulse voltage source 160, and the voltage for making the pulse voltage source 160 is 0V.
Step S112, causes the vanadium dioxide in conductive substrates 120 thin by adjusting the voltage of direct voltage source 150
Film 140 undergoes phase transition.
The infrared spectrum transmitance of the vanadium dioxide film 140 is made less than default infrared spectrum transmitance.Wherein, described
Phase transformation refers to：The vanadium dioxide film 140 is changed into metallic conductor by insulator.
Step S113, the voltage of the direct voltage source 150 is maintained the voltage of phase transformation.
Step S114, adjusts the voltage signal of the pulse voltage source 160.
By adjusting the voltage signal of the pulse voltage source 160, the infrared spectrum to the vanadium dioxide film 140 is saturating
The rate of mistake is adjusted, to realize the regulation and control to infrared photon memory storage state.
In present pre-ferred embodiments, the vanadium dioxide film 140 before phase transformation is monoclinic structure, after phase transformation
The vanadium dioxide film 140 is tetragonal crystalline structure.Before and after 140 phase transformation of the vanadium dioxide film, to infrared light by projecting
It is changed into reflection, reduces the infrared spectrum transmitance of the vanadium dioxide film 140.
In present pre-ferred embodiments, the voltage signal of the pulse voltage source 160 includes：The electricity of pulse voltage source 160
Pressure size, the voltage-duration of pulse voltage source 160 and intermittent time.
The vanadium dioxide film 140 has hysteresis effect to infrared transmittivity, therefore, it is possible to by adjusting the pulse
Voltage source 160, realizes the regulation and control to infrared photon memory storage state.
Next by taking a kind of specific embodiment as an example, introduce methods described be how to infrared photon memory storage.
Refer to Fig. 3, Fig. 3 is vanadium dioxide of the present invention/gallium nitride heterojunction thin-film material infrared spectrum transmitance with outer
Put bias size variation curve map.The Voltage Cortrol of the pulse voltage source 160 is 0V, is adjusted in the range of 0-6V described
The voltage of direct voltage source 150.The voltage of the direct voltage source 150 increases 0.5V by 0V, per 45s.
When the direct voltage source 150 is 0V, infrared spectrum transmitance is 73% left side to the vanadium dioxide film 140
Right.Before 5V being increased to the voltage of the direct voltage source 150, the infrared spectrum of the vanadium dioxide film 140 is passed through
Rate does not change a lot.After the voltage of the direct voltage source 150 increases to 5V, the electrically conducting transparent substrate 120 is produced
Raw Joule heat makes the vanadium dioxide film 140 there occurs phase transformation, the infrared spectrum transmitance of the vanadium dioxide film 140
Drastically decline.As the continuation of 150 voltage of the direct voltage source increases, the infrared spectrum of the vanadium dioxide film 140 is saturating
Cross rate continuous decrease.
Refer to Fig. 4, Fig. 4 is vanadium dioxide/gallium nitride heterojunction thin-film material visible ray-near infrared light transmitance with outer
Put bias size variation curve map.In figure from top to bottom, respectively the transmitance of gallium nitride and vanadium dioxide/gallium nitride heterogeneous
Transmitance of the junction thin film material in 0V, 4V, 5V, 6V.The transmitance of gallium nitride itself is very high, increases the direct voltage source
150, the direct voltage source 150 is adjusted in 0V, 4V, 5V, 6V.Increase with 150 voltage of the direct voltage source, it is seen that light
Partial transmitance is held essentially constant, but infrared spectrum transmitance is gradually lowered.
Refer to Fig. 5, Fig. 5 is infrared waves strong point of the vanadium dioxide/gallium nitride heterojunction thin-film material in 1800nm, passes through
Rate graph of relation over time under different bias voltages.Temporal resolution is 1s, and in figure is titanium dioxide from top to bottom
Vanadium/transmitance of the gallium nitride heterojunction thin-film material when bias voltage is set to 4.5V, 5.0V, 5.5V, 6.0V.In biased electrical
Force down when 5V, the change of infrared spectrum transmitance is less.When bias voltage is for 5V, infrared spectrum transmitance reduces rapidly, and
And the increase with voltage, transmitance continuous decrease.For example, the bias voltage of 6V can complete in 30s 40% or so infrared
The modulation of spectral transmittance.
Refer to Fig. 6, Fig. 6 is infrared memory storage schematic diagram.The direct voltage source 150 adjusts straight to 4.5V, 4.5V
Impact of the stream source to transmitance is equivalent to a in Fig. 40Point.Now, the pulse voltage source 160 launches a pulse, transmitance
It is reduced to b1Point.The pulse voltage source 160 is closed, transmitance along backtracking, and will not be to revert to due to hysteresis effect
a1Point.When the pulse voltage source 160 launches a pulse again, transmitance is reduced to b again2Point, when being again switched off, returns to a2
Point.So as to voltage-duration and the interval time of the pulse voltage source 160 is relied on, infrared transmittivity state is realized from a0Extremely
a1Again to a2Change, show the memory to infrared photon and storage.
Refer to the adjustment curve that Fig. 7, Fig. 7 are photon memory state provided in an embodiment of the present invention.By the direct current
Potential source 150 is fixed on 4.5V or 5V, after stable 100s, applies voltage of the pulse voltage source 160 for 0.5V or 1V, holds
Continuous time 5s, is spaced 20s.Initial voltage magnitude value and the duration of memory state quantity and the direct voltage source 150
Relevant., compared with hour, the difference between each memory state is also little, and voltage is bigger, and difference is also bigger for pulse voltage.
Refer to the adjustment curve of the photon memory state that Fig. 8, Fig. 8 are under different original states.Described in more early offer
Pulse voltage source 160, the difference of each memory state are also bigger.
In sum, vanadium dioxide film of the present invention is arranged in conductive substrates, and positive and negative electrode is arranged in conductive substrates
And positioned at the relative both sides of vanadium dioxide film, direct voltage source and the pulse voltage source are series between positive and negative electrode.By
In sensitivity characteristic of the vanadium dioxide to infrared photon, the memory can be used for storing infrared photon.Voltage in pulse voltage source
During for 0V, DC source voltage is adjusted so that vanadium dioxide film undergoes phase transition, so as to adjust the infrared spectrum of vanadium dioxide film
Transmitance.The voltage of direct voltage source is maintained the voltage of critical transformation temperature, the voltage signal of pulse voltage source is adjusted, with two
The infrared spectrum transmitance of vanadium oxide film is adjusted, and to realize the memory storage to infrared photon, reduces optical memory
Manufacture difficulty.
The preferred embodiments of the present invention are the foregoing is only, the present invention is not limited to, for the skill of this area
For art personnel, the present invention can have various modifications and variations.All within the spirit and principles in the present invention, made any repair
Change, equivalent, improvement etc., should be included within the scope of the present invention.
Claims (10)
1. a kind of memory to infrared photon memory storage, it is characterised in that the memory includes：
For conductive conductive substrates；
For carrying out the vanadium dioxide film of memory storage to infrared photon；
For the positive and negative electrode for making the conductive substrates conductive；
For providing electric current to change the direct current of the infrared spectrum transmitance of the vanadium dioxide film for the conductive substrates
Potential source, and
The pulse voltage source regulated and controled by infrared photon memory storage state for the vanadium dioxide film；
The vanadium dioxide film is arranged in the conductive substrates, and the positive and negative electrode is arranged in the conductive substrates and position
In the relative both sides of the vanadium dioxide film, the direct voltage source and the pulse voltage source are series at the positive and negative electrode
Between.
2. memory according to claim 1, it is characterised in that：
The vanadium dioxide film is arranged in the conductive substrates by way of deposition or sol-gel spin coating.
3. memory according to claim 2, it is characterised in that the conductive substrates are electrically conducting transparent substrate.
4. memory according to claim 3, it is characterised in that the conductive substrates are by indium doping tin oxide, Fluorin doped
Tin oxide, aluminium-doped zinc oxide or silicon doping gallium nitride any one make.
5. memory according to claim 1, it is characterised in that the positive and negative electrode is arranged on described by sputtering method
In conductive substrates.
6. memory according to claim 5, it is characterised in that the positive and negative electrode is made of gold.
7. a kind of method to infrared photon memory storage for being applied to the memory described in any one of claim 1 to 6, its are special
Levy and be, methods described includes：
The voltage of the pulse voltage source is adjusted, the voltage for making the pulse voltage source is 0V；
The vanadium dioxide film in the conductive substrates is occurred by adjusting the voltage of the direct voltage source
Phase transformation, so that the infrared spectrum transmitance of the vanadium dioxide film is less than default infrared spectrum transmitance；
The voltage of the direct voltage source is maintained the voltage of critical transformation temperature；
By adjusting the voltage signal of the pulse voltage source, the infrared spectrum transmitance to the vanadium dioxide film is adjusted
Section, to realize the regulation and control to infrared photon memory storage state.
8. method according to claim 7, it is characterised in that made by adjusting the voltage of the direct voltage source described
In the step of vanadium dioxide film that must be located in the conductive substrates undergoes phase transition：
The vanadium dioxide film is changed into metallic conductor by insulator.
9. method according to claim 8, it is characterised in that the vanadium dioxide film before phase transformation is monoclinic crystal tying
Structure, the vanadium dioxide film after phase transformation are tetragonal crystalline structure.
10. method according to claim 8, it is characterised in that the voltage signal of the pulse voltage source includes：
The voltage swing of pulse voltage source, the voltage-duration of pulse voltage source and intermittent time.
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