CN1064766A - The method of making transistor with silicon single crystal thin section - Google Patents
The method of making transistor with silicon single crystal thin section Download PDFInfo
- Publication number
- CN1064766A CN1064766A CN 91101561 CN91101561A CN1064766A CN 1064766 A CN1064766 A CN 1064766A CN 91101561 CN91101561 CN 91101561 CN 91101561 A CN91101561 A CN 91101561A CN 1064766 A CN1064766 A CN 1064766A
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- China
- Prior art keywords
- silicon
- temperature
- chip
- silicon chip
- transistor
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Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 67
- 239000010703 silicon Substances 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000013078 crystal Substances 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 21
- 230000008021 deposition Effects 0.000 claims abstract description 10
- 239000012535 impurity Substances 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 8
- 239000000843 powder Substances 0.000 claims abstract description 7
- 238000005260 corrosion Methods 0.000 claims abstract description 5
- 230000007797 corrosion Effects 0.000 claims abstract description 5
- 238000005498 polishing Methods 0.000 claims abstract 2
- 238000000151 deposition Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 239000004327 boric acid Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 14
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000002210 silicon-based material Substances 0.000 abstract description 4
- 238000005245 sintering Methods 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910000632 Alusil Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of method of making transistor with silicon single crystal thin section, it comprises that a. diffuses into N in advance on original single-chip
+Impurity, b. the mechanical lapping of silicon chip single face, polishing, c. in 400 ℃～1200 ℃ scopes, grow or the deposition medium rete, d. the silicon chip back side be coated with the highly pure glass powder under 500 ℃～1200 ℃ temperature with two back-to-back silicon monocrystal flake sintering, e. two-sided or single side method is made transistor, and f. separates above-mentioned silicon chip with chemical corrosion method after making transistor chip.Advantage of the present invention is triple diffusion methods of having got rid of the high temperature that conventional semi-conductor industry adopted (1275 ℃) and long-time (200 hours), has energy-conservationly simultaneously, economizes silicon materials and shortens the characteristics of production cycle.
Description
The present invention relates to the method for making transistor with silicon single crystal thin section, especially relate to the preparation method of silicon chip.
Since the fifties power transistor became industrial products, by the further investigation to Semiconductive Theory and technology, people constantly released semiconductor new material, new device structure and new technology, impelled power transistor to develop basis into electronic technology field rapidly.Up to now, make the used N/N of power transistor
+, N/P
+, P/P
+And P/N
+The silicon materials of conduction type adopt following method to obtain usually:
(1) growing epitaxial silicon-epitaxial growth one deck high resistivity silicon single crystal on the heavily doped silicon substrate.
The dark knot diffusion of (2) triple diffusions-on the lightly-doped silicon monocrystal chip, carry out high concentration impurities.
Because the design of power transistor has strict requirement to the resistivity and the thickness of silicon chip material, transistor fabrication then requires silicon chip must reach certain gross thickness, with the rate of finished products of guaranteeing to produce.In the method for the required silicon chip material of above-mentioned preparation power transistor, current existing problem has:
(1) silicon epitaxy method
The most suitable thin epitaxy layer growth of this method, the difficult quality that can guarantee the thick epitaxial layer of high resistivity, its production difficulty is big, the production cost height.Therefore be to adopt triple diffuse si substrates to produce hundreds of high-voltage power transistors that lie prostrate the kilovolt level at home mostly.
(2) triple diffusion methods
Transistorized manufacture process requirement silicon chip gross thickness keeps greater than 250 μ m, to avoid fragment occurring in the process of making tube core.But the power transistor of kilovolt following withstand voltage level of level but requires the thickness of high resistivity silicon single crystal layer generally not exceed 100 μ m, otherwise will have influence on other the realization of some parameter indexs of power transistor.So people take to go in the back side of the original silicon single crystal flake of high resistant High temperature diffusion the method for high concentration semiconductor impurity, the silicon conductivity of 3/4ths the back bottom area that accounts for the silicon chip gross thickness is increased greatly, make its effect of only playing the low resistivity substrate of support applications, thereby the silicon chip gross thickness of above-mentioned existence and the contradiction between the high resistivity layer effective thickness are resolved.The degree of depth of triple diffusions must reach 200 μ m for this reason, promptly need be under 1275 ℃ high temperature, and impurity spreads more than 200 hours in silicon chip continuously.As seen triple method of diffusion except special consuming electric power with when taking a lot of work, also will in the silicon body, introduce the regenerated heat microdefect, have influence on the quality of silicon chip material.In addition, on the production domesticization production line, also be difficult to be implemented in the index of dark diffusion 200 μ m in the silicon at present.Thereby have to take the way of trading off aborning, promptly on too thick resistive formation silicon materials, use the graphics chip that increases area to make hundreds of power transistors that lie prostrate kilovolt level withstand voltage level.Promptly, try to achieve the realization of device all round properties parameter to reduce the cost of silicon chip utilance and transistor rate of finished products.
The method that the purpose of this invention is to provide a kind of making transistor with silicon single crystal thin section.
Method of the present invention is as follows: at first original high resistant monocrystalline is cut into thickness and reaches silicon chip about 250 μ m, and through the laggard high temperature dispersing furnace of chemical cleaning, logical phosphorus source (POCl under 900 ℃～1200 ℃ temperature
3Or give and be coated with P
2O is in silicon chip surface) make impurity (N
+) carry out pre-deposition diffusion, the time is half an hour to 4 hour.Take out silicon chip and carry out mechanical lapping, being polished to minute surface, to get the silicon chip gross thickness be 150 μ m～200 μ m.In 400 ℃～1200 ℃ scopes, grow or the deposition medium rete then in the silicon chip surface or the back side, rete is the above silicon dioxide film of 1 μ m, perhaps chemical deposition last layer thickness surpasses polysilicon, silicon nitride or the amorphous silicon film of 1 μ m under low pressure (pressure=0.7～1.2 torr) condition.Silicon dioxide low temperature depositing temperature is 700 ℃～800 ℃, and the temperature of polysilicon low-pressure chemical vapor deposition is 600 ℃～700 ℃, and the temperature of silicon nitride low pressure gas deposition is 400 ℃～850 ℃.Under 500 ℃～1200 ℃ (600 ℃～900 ℃ preferable) temperature, utilize the highly pure glass powder that is applied on the silicon chip back side to make binding agent firm burning of two mutual back-to-back silicon chips sticked together.The composition of highly pure glass powder is silicic-boric acid zinc, silicic-boric acid lead.Adopt conventional semiconductor planar technology (two-sided method or single side method) on silicon chip to make transistor chip again, then separate above-mentioned silicon chip, realize metallization at the silicon chip back side with the method for chemical corrosion.Its corrosion liquid formula is a hydrofluoric acid solution, hydrofluoric acid: hydrogen peroxide: the mixed solution of ammonium fluoride=1: 6: 10.Be packaged into transistor at last.
Embodiment:
With monocrystalline (N type, electricalresistivity=25 Ω-cm) be cut into the silicon sheet that thickness is 250 μ m, with No. 1 (NH
4OH: H
2O
2: H
2O=1: 2: 5) and No. 2 (HCl: H
2O
2: H
2O=1: 2: 8) after chemical cleaning solution cleans and washes away ionized water, in drying in oven.Silicon chip is under 1140 ℃ of temperature, and logical nitrogen (flow 500ml/min) carries phosphorus oxychloride and carries out the diffusion of impurity pre-deposition at silicon chip surface, and the time is 4 hours.Silicon chip is that 650 ℃ and pressure reach under the condition of 0.8～1.0 torr in temperature, adopts SiH
4-N
2System is the polysilicon film of 1 μ m at surface deposition last layer thickness.With the mechanical lapping of silicon chip single face and be polished to minute surface (keep thickness be 170 ± 10 μ m).Silicon chip is through chemical cleaning, and under 1000 ℃ temperature, logical nitrogen makes solid-state nitration boron carry out the diffusion of boron pre-deposition, 20 minutes time to silicon face.Be coated with skim highly pure glass powder (IP-760 type, P at the silicon chip back side
6O-Al
2O
3-B
2O
3), two silicon chips are closed back-to-back and place on the quartz boat.Silicon chip oven dry back advances sintering furnace, stops half an hour respectively under 500 ℃ and 720 ℃ of temperature, and the silicon chip burning sticks into merit.After the silicon chip chemical cleaning, under 1230 ℃ of temperature, logical oxygen diffusion 5 hours.The silicon chip surface resist coating utilizes photoetching method to erode the silicon dioxide film of transistor emitter region diffusion zone.Silicon chip is logical phosphorus (POCl under 1140 ℃ of temperature
3, N
2, O
2) do the diffusion of impurity pre-deposition, the time is 2 hours.Under 1220 ℃ of temperature, logical oxide-diffused 2 hours.Leave fairlead in the silicon chip surface photoetching, evaporate the thick aluminium lamination that reaches 2 μ m of last layer again, aluminium lamination is carved into contact conductor with photoetching process.Logical nitrogen carries out alusil alloy under 480 ℃ of temperature.Silicon chip surface applies anticorrosive by force (FSH-2 type) back-protective photoresist that a layer thickness is 10 μ m, after 30 minutes, puts silicon chip in sepatation etching liquid (HF: H 180 ℃ of drying in oven
2O
2: NH
4F=1: 6: 10) in, separates up and down mutually up to above-mentioned silicon chip.Silicon chip back spraying diamond dust hacking, back side chemical nickel plating is removed the glue-line in silicon chip front with FSH photoresist lift off liquid.The transistor characteristic, scribing, sintering chip of measuring silicon is on base and be packaged into transistor.The wherein preparation of silicon chip adhesive-highly pure glass powder: be to adopt and the silicon coefficient of expansion (α=33 * 10
-7/ ℃) close cordierite (2MgO * 2Al
2O
3* 5SiO
2, α=15 * 10
-7/ ℃) as the plumbous (PbO-B of system
2O
3-SiO
2) or (ZnO-B of zinc system
2O
3-SiO
2) packing material of glass dust, its particle diameter is 2～40 μ m, is good with φ=5～25 μ m wherein.
Advantage of the present invention is the production process of having got rid of triple diffusion machine silicon substrates of high temperature (1275 ℃) that conventional semi-conductor industry adopts and long-time (200 hours), reduce the regenerated heat microdefect of silicon chip inside, be conducive to make the power transistor of high-performance/cost ratio, have simultaneously the economize on electricity energy, economize silicon materials and the characteristics of shortening production cycle.
Claims (2)
1, a kind of method of making transistor with silicon single crystal thin section, it comprises:
A. on original single-chip, diffuse into N in advance
+Impurity;
B. the mechanical lapping of silicon chip single face, polishing;
It is characterized in that
C. in 400 ℃～1200 ℃ scopes, grow or the deposition medium rete;
D. the silicon chip back side is coated with the highly pure glass powder, burns two back-to-back silicon monocrystal flakes sticking under 500 ℃～1200 ℃ temperature;
E. two-sided or single side method is made transistor;
F. separate above-mentioned silicon chip with chemical corrosion method after making transistor chip.
2, the method for a kind of making transistor with silicon single crystal thin section according to claim 1 is characterized in that,
G. the time of impurity prediffusion is half an hour～4 hour among the said a, and temperature is 900 ℃～1200 ℃;
H. silicon dioxide low temperature depositing temperature is 700 ℃～800 ℃ among the said c; The temperature of polysilicon low-pressure chemical vapor deposition is 600 ℃～700 ℃, and the temperature of silicon nitride low pressure gas deposition is 400 ℃～850 ℃;
I. among the said d, the composition of highly pure glass powder is silicic-boric acid zinc, silicic-boric acid lead, and burning sticking temperature is 600 ℃～900 ℃;
J. the prescription of chemical corrosion liquid is hydrofluoric acid solution, hydrofluoric acid among the said f: hydrogen peroxide: the mixed solution of ammonium fluoride=1: 6: 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 91101561 CN1022653C (en) | 1991-03-13 | 1991-03-13 | Method for making transistor with silicon single crystal thin section |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 91101561 CN1022653C (en) | 1991-03-13 | 1991-03-13 | Method for making transistor with silicon single crystal thin section |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1064766A true CN1064766A (en) | 1992-09-23 |
| CN1022653C CN1022653C (en) | 1993-11-03 |
Family
ID=4905140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 91101561 Expired - Fee Related CN1022653C (en) | 1991-03-13 | 1991-03-13 | Method for making transistor with silicon single crystal thin section |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1022653C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270569A (en) * | 2011-05-20 | 2011-12-07 | 蚌埠天光传感器有限公司 | Method for forming semiconductor strained silicon wafer |
| CN103730358A (en) * | 2014-01-17 | 2014-04-16 | 上海超硅半导体有限公司 | Method for producing transistor through silicon single crystal sheets |
| CN107240547A (en) * | 2017-07-05 | 2017-10-10 | 捷捷半导体有限公司 | A kind of structure and its method for realizing the diffusion of N+ one sides |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1049002C (en) * | 1995-11-14 | 2000-02-02 | 北京元朝飞翔科技贸易公司 | Multipurpose metal surface caring agent and preparing process thereof |
| CN100400617C (en) * | 2006-06-30 | 2008-07-09 | 辽宁三特石油化工有限公司 | Cooling fluid of engine |
-
1991
- 1991-03-13 CN CN 91101561 patent/CN1022653C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270569A (en) * | 2011-05-20 | 2011-12-07 | 蚌埠天光传感器有限公司 | Method for forming semiconductor strained silicon wafer |
| CN103730358A (en) * | 2014-01-17 | 2014-04-16 | 上海超硅半导体有限公司 | Method for producing transistor through silicon single crystal sheets |
| CN107240547A (en) * | 2017-07-05 | 2017-10-10 | 捷捷半导体有限公司 | A kind of structure and its method for realizing the diffusion of N+ one sides |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1022653C (en) | 1993-11-03 |
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