CN106469785A - A kind of organic electro-optic device preparation method - Google Patents

A kind of organic electro-optic device preparation method Download PDF

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Publication number
CN106469785A
CN106469785A CN201610872928.8A CN201610872928A CN106469785A CN 106469785 A CN106469785 A CN 106469785A CN 201610872928 A CN201610872928 A CN 201610872928A CN 106469785 A CN106469785 A CN 106469785A
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layer
optic device
organic electro
conductive
device preparation
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CN201610872928.8A
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CN106469785B (en
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丁磊
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Shaanxi University of Science and Technology
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Shaanxi University of Science and Technology
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses a kind of organic electro-optic device preparation method, comprise the following steps：1) prepare mask plate, and conductive layer is prepared on substrate, again mask plate is covered on the electrically conductive, then depositing insulating layer on the electrically conductive, remove mask plate again, form two strips of conductive regions on the electrically conductive, then in middle part and the deposition organic luminous layer on insulating barrier in two strips of conductive regions；2) some negative electrodes are deposited on organic luminous layer, deposit anelectrode respectively at the two ends in two strips of conductive regions, obtain organic electro-optic device, the method can effectively improve the performance of organic electro-optic device, avoid etching conductive substrate simultaneously.

Description

A kind of organic electro-optic device preparation method
Technical field
The invention belongs to photoelectric device preparing technical field, it is related to a kind of organic electro-optic device preparation method.
Background technology
Organic electro-optic device preparation is required to first electrically-conductive backing plate is patterned at present, and patterned method includes two kinds Wet method and dry method, wet processing mainly adopts corrosive solution such as acid, the method due to being related to chemicals, therefore for environment Will have an impact, wet etching also can make the edge of etching have irregular etching defect simultaneously, this can substantially reduce prepared The performance of organic electroluminescence device.In addition the method more typically adopting laser ablation in dry etching at present, using sharp The method etching conductive substrate of photoengraving can make etched region produce edge-melting, causes device side between the meeting of edge-melting excessive height Along luminous, make the great decline of device performance, if height controls in below 5nm, there will not be edge to light, but melted Height also can change the Electric Field Distribution of organic electro-optic device, thus affecting the performance of whole device, at present, industrial circle and academia The method also not having this problem of effectively solving.
Content of the invention
It is an object of the invention to the shortcoming overcoming above-mentioned prior art, there is provided a kind of organic electro-optic device preparation side Method, the method can effectively improve the performance of organic electro-optic device, avoid etching conductive substrate simultaneously.
For reaching above-mentioned purpose, organic electro-optic device preparation method of the present invention comprises the following steps：
1) prepare mask plate, and prepare conductive layer on substrate, then mask plate is covered on the electrically conductive, then in conduction Depositing insulating layer on layer, then remove mask plate, form two strips of conductive regions on the electrically conductive, then in conductive region Organic luminous layer is deposited on portion and insulating barrier；
2) some negative electrodes are deposited on organic luminous layer, deposit anelectrode respectively at the two ends of conductive region, obtain organic Photoelectric device.
Substrate is rigid substrate or flexible base board.
Conductive layer is ITO layer, nano-silver thread layer, wire netting compartment, graphene layer or carbon nanotube layer.
The material of insulating barrier is ceramic material, non-conducting polymeric material or metal oxide materials.
Step 1) on the electrically conductive adopt vacuum deposition method, inkjet printing methods or method for printing screen deposition insulation Layer.
Step 1) in vacuum vapour deposition or ink-jet printing process are adopted on middle part and the insulating barrier in two strips of conductive regions Deposition organic luminous layer.
The number of negative electrode is 4.
The quantity of described conductive region is 2, and conductive region is rectangular configuration.
The invention has the advantages that：
Organic electro-optic device preparation method of the present invention in concrete operations, by mask film covering on the electrically conductive Plate, then depositing insulating layer on the electrically conductive, then remove mask plate, thus forming patterning effect on the electrically conductive, it is to avoid make With dry or wet etch technology, patterning effect is formed on electrically-conductive backing plate, it is to avoid edge produced by wet method and dry etching The jagged scene of out-of-flatness, makes the Electric Field Distribution of organic electro-optic device evenly, improves the performance of organic electro-optic device.
Brief description
Fig. 1 is the flow chart of the present invention；
The voltage-brightness curve chart of the organic electro-optic device that Fig. 2 obtains for embodiment one；
The current efficiency of the organic electro-optic device that Fig. 3 obtains for embodiment one-brightness curve figure；
The brightness of the organic electro-optic device that Fig. 4 obtains for embodiment one-power efficiency curve chart.
Wherein, 1 be substrate, 2 be conductive layer, 3 be insulating barrier, 4 be organic luminous layer, 5 be negative electrode, 6 be anelectrode.
Specific embodiment
Below in conjunction with the accompanying drawings the present invention is described in further detail：
With reference to Fig. 1, organic electro-optic device preparation method of the present invention comprises the following steps：
1) prepare mask plate, and prepare conductive layer 2 on substrate 1, then mask plate is covered on conductive layer 2, Ran Hou Depositing insulating layer 3 on conductive layer 2, then remove mask plate, conductive layer 2 forms conductive region, then in conductive region Organic luminous layer 4 is deposited on portion and insulating barrier 3；
2) some negative electrodes 5 are deposited on organic luminous layer 4, deposit positive electricity respectively at the two ends in two strips of conductive regions Pole 6, obtains organic electro-optic device.
Substrate 1 is rigid substrate or flexible base board.
Conductive layer 2 is ITO layer, nano-silver thread layer, wire netting compartment, graphene layer or carbon nanotube layer.
The material of insulating barrier 3 is ceramic material, non-conducting polymeric material or metal oxide materials.
Step 1) in vacuum deposition method, inkjet printing methods or method for printing screen deposition are adopted on conductive layer 2 absolutely Edge layer 3.
Step 1) in vacuum vapour deposition or ink-jet printing process are adopted on middle part and the insulating barrier 3 in two strips of conductive regions Deposition organic luminous layer 4.
The number of negative electrode 5 is 4.
The quantity of described conductive region is 2, and conductive region is rectangular configuration.
Embodiment one
Acetone, second are used respectively to the ito glass substrate 1 having carried out wet etching and the ito substrate 1 not doing any etching Alcohol and distilled water are cleaned by ultrasonic, then with being dried after distilled water flushing.Transfer base substrate 1 to vacuum thermal evaporation chamber, in ITO HAT-CN, NPB, the Alq for 60nm for the thickness for 75nm for the thickness for 10nm for the difference heat sublimation evaporation thickness on substrate 13And it is thick Spend the Liq for 2nm；Last heat sublimation AM aluminum metallization 150nm forms negative electrode.Deposition velocity is to NPB and Alq3It is maintained at 2 angstroms per second, right HAT-CN and Liq is maintained at 0.5 angstroms per second, aluminum is maintained at 8 angstroms per second, eventually forms device architecture as follows：
ITO (carrying out the substrate 1 of wet etching and the substrate 1 not carrying out any etching)/HAT-CN (10nm)/NPB (75nm)/Alq3(60nm)/Liq(2nm)/Al(150nm).
Wherein, HAT-CN is hole injection layer, and NPB is hole transmission layer, Alq3For luminescent layer and electron transfer layer, Liq For electron injecting layer, this device is green fluorescence device.The present embodiment forms figure by ito substrate 1 is carried out with wet etching Change, subsequently carry out OLED evaporation；In addition a piece of ito substrate 1 not etched is used by preparation flow figure as shown in Figure 1 and sets The mask plate counted, is first deposited with one layer of SiO insulating barrier 3, is preparing organic luminous layer 4 with the mask plate of design, is finally preparing the moon Electrode 5 and anelectrode 6.
Knowable to Fig. 2, Fig. 3 and Fig. 4, its photoelectric properties of the OLED prepared by ito substrate 1 not etched are substantially excellent In the device corresponding to the ito substrate 1 of wet etching.Therefore, invention not only avoids the chemistry examination that wet etching is brought Agent environmental pollution, the performance boost to OLED simultaneously has remarkable result.
The foregoing is only one embodiment of the present invention, be not all of or unique embodiment, this area is common Any equivalent conversion that technical staff is taken to technical solution of the present invention by reading description of the invention, is the present invention Claim covered.

Claims (8)

1. a kind of organic electro-optic device preparation method is it is characterised in that comprise the following steps：
1) prepare mask plate, and conductive layer (2) is prepared on substrate (1), then mask plate is covered on conductive layer (2), then In the upper depositing insulating layer (3) of conductive layer (2), then remove mask plate, in conductive layer (2) upper formation conductive region, then in conduction The middle part in region is upper with insulating barrier (3) to deposit organic luminous layer (4)；
2) in organic luminous layer (4) some negative electrodes of upper deposition (5), deposit anelectrode (6) respectively at the two ends of conductive region, obtain Organic electro-optic device.
2. organic electro-optic device preparation method according to claim 1 it is characterised in that substrate (1) be rigid substrate or Flexible base board.
3. organic electro-optic device preparation method according to claim 1 is it is characterised in that conductive layer (2) is ITO layer, receives Rice silver wire layer, wire netting compartment, graphene layer or carbon nanotube layer.
4. organic electro-optic device preparation method according to claim 1 is it is characterised in that the material of insulating barrier (3) is pottery Ceramic material, non-conducting polymeric material or metal oxide materials.
5. organic electro-optic device preparation method according to claim 1 is it is characterised in that step 1) in conductive layer (2) Upper employing vacuum deposition method, inkjet printing methods or method for printing screen depositing insulating layer (3).
6. organic electro-optic device preparation method according to claim 1 is it is characterised in that step 1) in lead in two bar shapeds The middle part in electric region is upper with insulating barrier (3) to adopt vacuum vapour deposition or ink-jet printing process deposition organic luminous layer (4).
7. organic electro-optic device preparation method according to claim 1 is it is characterised in that the number of negative electrode (5) is 4 Individual.
8. organic electro-optic device preparation method according to claim 1 is it is characterised in that the quantity of described conductive region is 2, and conductive region is rectangular configuration.
CN201610872928.8A 2016-09-30 2016-09-30 A kind of organic electro-optic device preparation method Active CN106469785B (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101160002A (en) * 2007-09-20 2008-04-09 清华大学 Organic electroluminescent device and its prepn.
CN201466064U (en) * 2009-06-17 2010-05-12 上海宏源照明电器有限公司 Three-primary-color OLED luminescent device
JP2011238843A (en) * 2010-05-12 2011-11-24 Panasonic Corp Wiring board with bump electrode and method for manufacturing the same
CN104600199A (en) * 2014-12-30 2015-05-06 昆山工研院新型平板显示技术中心有限公司 Organic electroluminescent device and preparation method thereof
CN105098100A (en) * 2015-06-24 2015-11-25 京东方科技集团股份有限公司 OLED (Organic Light Emitting Diode) display device, manufacturing method thereof, display panel and display device
CN105870358A (en) * 2016-04-08 2016-08-17 武汉华星光电技术有限公司 Preparation method for scattering layer, and organic light-emitting diode

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101160002A (en) * 2007-09-20 2008-04-09 清华大学 Organic electroluminescent device and its prepn.
CN201466064U (en) * 2009-06-17 2010-05-12 上海宏源照明电器有限公司 Three-primary-color OLED luminescent device
JP2011238843A (en) * 2010-05-12 2011-11-24 Panasonic Corp Wiring board with bump electrode and method for manufacturing the same
CN104600199A (en) * 2014-12-30 2015-05-06 昆山工研院新型平板显示技术中心有限公司 Organic electroluminescent device and preparation method thereof
CN105098100A (en) * 2015-06-24 2015-11-25 京东方科技集团股份有限公司 OLED (Organic Light Emitting Diode) display device, manufacturing method thereof, display panel and display device
CN105870358A (en) * 2016-04-08 2016-08-17 武汉华星光电技术有限公司 Preparation method for scattering layer, and organic light-emitting diode

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