CN106462064A - Positive photosensitive resin composition - Google Patents
Positive photosensitive resin composition Download PDFInfo
- Publication number
- CN106462064A CN106462064A CN201580031678.9A CN201580031678A CN106462064A CN 106462064 A CN106462064 A CN 106462064A CN 201580031678 A CN201580031678 A CN 201580031678A CN 106462064 A CN106462064 A CN 106462064A
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- CN
- China
- Prior art keywords
- formula
- carbon number
- positive type
- type photosensitive
- represent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000011342 resin composition Substances 0.000 title abstract description 5
- -1 quinonediazide compound Chemical class 0.000 claims abstract description 74
- 229920005989 resin Polymers 0.000 claims abstract description 58
- 239000011347 resin Substances 0.000 claims abstract description 58
- 239000005011 phenolic resin Substances 0.000 claims abstract description 53
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 31
- 125000003118 aryl group Chemical group 0.000 claims abstract description 24
- 125000000962 organic group Chemical group 0.000 claims abstract description 24
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 22
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 86
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 80
- 150000002894 organic compounds Chemical class 0.000 claims description 46
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims description 43
- 239000002243 precursor Substances 0.000 claims description 41
- 150000004291 polyenes Chemical class 0.000 claims description 38
- 239000004642 Polyimide Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 37
- 229920001721 polyimide Polymers 0.000 claims description 37
- 239000003513 alkali Substances 0.000 claims description 31
- 150000001875 compounds Chemical class 0.000 claims description 28
- 125000002769 thiazolinyl group Chemical group 0.000 claims description 27
- 239000002253 acid Substances 0.000 claims description 21
- 239000007787 solid Substances 0.000 claims description 17
- 239000002585 base Substances 0.000 claims description 16
- 230000002285 radioactive effect Effects 0.000 claims description 14
- 239000002904 solvent Substances 0.000 claims description 13
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 12
- 150000002148 esters Chemical group 0.000 claims description 12
- 150000001721 carbon Chemical group 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 150000001336 alkenes Chemical class 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000000470 constituent Substances 0.000 claims description 7
- 125000001118 alkylidene group Chemical group 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 125000001841 imino group Chemical group [H]N=* 0.000 claims description 5
- 150000007530 organic bases Chemical class 0.000 claims description 4
- 229920005575 poly(amic acid) Polymers 0.000 claims description 4
- 150000003949 imides Chemical class 0.000 claims description 3
- 229920003192 poly(bis maleimide) Polymers 0.000 claims description 3
- 230000004580 weight loss Effects 0.000 claims description 3
- 229940125810 compound 20 Drugs 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 238000007591 painting process Methods 0.000 claims description 2
- 235000003642 hunger Nutrition 0.000 claims 1
- 238000010304 firing Methods 0.000 abstract description 4
- 125000004432 carbon atom Chemical group C* 0.000 abstract 3
- 125000003342 alkenyl group Chemical group 0.000 abstract 2
- 125000002723 alicyclic group Chemical group 0.000 abstract 1
- 125000002947 alkylene group Chemical group 0.000 abstract 1
- 125000002993 cycloalkylene group Chemical group 0.000 abstract 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 37
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 20
- 238000006243 chemical reaction Methods 0.000 description 20
- 239000000126 substance Substances 0.000 description 20
- 229920003986 novolac Polymers 0.000 description 19
- 239000007789 gas Substances 0.000 description 18
- 229920000642 polymer Polymers 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 15
- 239000000203 mixture Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 239000000243 solution Substances 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 12
- 239000000049 pigment Substances 0.000 description 12
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 9
- 229920003987 resole Polymers 0.000 description 9
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 229930003836 cresol Natural products 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 7
- 238000011161 development Methods 0.000 description 7
- 230000018109 developmental process Effects 0.000 description 7
- 238000003756 stirring Methods 0.000 description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000005160 1H NMR spectroscopy Methods 0.000 description 4
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- HEDRZPFGACZZDS-MICDWDOJSA-N Trichloro(2H)methane Chemical compound [2H]C(Cl)(Cl)Cl HEDRZPFGACZZDS-MICDWDOJSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 4
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 4
- 238000006266 etherification reaction Methods 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229920005862 polyol Polymers 0.000 description 4
- 150000003077 polyols Chemical class 0.000 description 4
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 4
- 239000013049 sediment Substances 0.000 description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- TZRXHJWUDPFEEY-UHFFFAOYSA-N Pentaerythritol Tetranitrate Chemical compound [O-][N+](=O)OCC(CO[N+]([O-])=O)(CO[N+]([O-])=O)CO[N+]([O-])=O TZRXHJWUDPFEEY-UHFFFAOYSA-N 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000004040 coloring Methods 0.000 description 3
- 239000000975 dye Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002170 ethers Chemical class 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- HVAMZGADVCBITI-UHFFFAOYSA-M pent-4-enoate Chemical compound [O-]C(=O)CCC=C HVAMZGADVCBITI-UHFFFAOYSA-M 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 229920006389 polyphenyl polymer Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- FKRCODPIKNYEAC-UHFFFAOYSA-N propionic acid ethyl ester Natural products CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- BDHFUVZGWQCTTF-UHFFFAOYSA-N sulfonic acid Chemical compound OS(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-N 0.000 description 3
- KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical compound C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 description 2
- 150000000181 1,2-naphthoquinones Chemical class 0.000 description 2
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical class OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- VISOTGQYFFULBK-UHFFFAOYSA-N 3-hydroxy-4-phenylpyrrole-2,5-dione Chemical compound O=C1C(=O)NC(O)=C1C1=CC=CC=C1 VISOTGQYFFULBK-UHFFFAOYSA-N 0.000 description 2
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 2
- YVHAIVPPUIZFBA-UHFFFAOYSA-N Cyclopentylacetic acid Chemical compound OC(=O)CC1CCCC1 YVHAIVPPUIZFBA-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical class C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 239000004115 Sodium Silicate Substances 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 238000005937 allylation reaction Methods 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000549 coloured material Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 235000011194 food seasoning agent Nutrition 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004464 hydroxyphenyl group Chemical group 0.000 description 2
- 150000002466 imines Chemical class 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 125000005395 methacrylic acid group Chemical group 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- 150000001451 organic peroxides Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 235000019795 sodium metasilicate Nutrition 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 229910052911 sodium silicate Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229940124530 sulfonamide Drugs 0.000 description 2
- 150000003456 sulfonamides Chemical class 0.000 description 2
- 238000001029 thermal curing Methods 0.000 description 2
- 150000003628 tricarboxylic acids Chemical class 0.000 description 2
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- NIDNOXCRFUCAKQ-UMRXKNAASA-N (1s,2r,3s,4r)-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid Chemical compound C1[C@H]2C=C[C@@H]1[C@H](C(=O)O)[C@@H]2C(O)=O NIDNOXCRFUCAKQ-UMRXKNAASA-N 0.000 description 1
- OTMUGUSCBUZUIJ-UHFFFAOYSA-N (3-acetyloxy-2-hydroxy-4,5-dimethylphenyl) acetate Chemical compound CC(=O)OC1=CC(C)=C(C)C(OC(C)=O)=C1O OTMUGUSCBUZUIJ-UHFFFAOYSA-N 0.000 description 1
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- QYGBYAQGBVHMDD-XQRVVYSFSA-N (z)-2-cyano-3-thiophen-2-ylprop-2-enoic acid Chemical compound OC(=O)C(\C#N)=C/C1=CC=CS1 QYGBYAQGBVHMDD-XQRVVYSFSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- BYKTYXWMQIDOSX-UHFFFAOYSA-N 1-(2-ethyl-4,6-dimethylphenyl)pyrrole-2,5-dione Chemical compound CCC1=CC(C)=CC(C)=C1N1C(=O)C=CC1=O BYKTYXWMQIDOSX-UHFFFAOYSA-N 0.000 description 1
- KCFXNGDHQPMIAQ-UHFFFAOYSA-N 1-(4-methylphenyl)pyrrole-2,5-dione Chemical compound C1=CC(C)=CC=C1N1C(=O)C=CC1=O KCFXNGDHQPMIAQ-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- SJLLJZNSZJHXQN-UHFFFAOYSA-N 1-dodecylpyrrole-2,5-dione Chemical compound CCCCCCCCCCCCN1C(=O)C=CC1=O SJLLJZNSZJHXQN-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- CAQYAZNFWDDMIT-UHFFFAOYSA-N 1-ethoxy-2-methoxyethane Chemical compound CCOCCOC CAQYAZNFWDDMIT-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- ZKEUVTROUPQVTM-UHFFFAOYSA-N 1-pentylperoxypentane Chemical compound CCCCCOOCCCCC ZKEUVTROUPQVTM-UHFFFAOYSA-N 0.000 description 1
- HIDBROSJWZYGSZ-UHFFFAOYSA-N 1-phenylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC=C1 HIDBROSJWZYGSZ-UHFFFAOYSA-N 0.000 description 1
- NOSXUFXBUISMPR-UHFFFAOYSA-N 1-tert-butylperoxyhexane Chemical compound CCCCCCOOC(C)(C)C NOSXUFXBUISMPR-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
- C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
- C08G8/10—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with phenol
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/28—Chemically modified polycondensates
- C08G8/30—Chemically modified polycondensates by unsaturated compounds, e.g. terpenes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
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Abstract
Provided is a positive photosensitive resin composition, a film of which after heating and firing generates less outgas. A positive photosensitive resin composition which contains a polyalkenyl phenol resin having a structure represented by formula (1), an alkali-soluble resin (excluding a polyalkenyl phenol resin having a structure represented by formula (1)), and a quinonediazide compound. (In formula (1), each of R1, R2 and R3 independently represents a hydrogen atom, an alkyl group having 1-5 carbon atoms, an alkenyl group represented by formula (2), an alkoxy group having 1-2 carbon atoms or a hydroxyl group, and at least one of the R1, R2 and R3 moieties represents an alkenyl group represented by formula (2); and each Q independently represents an alkylene group represented by formula -CR4R5-, a cycloalkylene group having 5-10 carbon atoms, a divalent organic group having an aromatic ring, a divalent organic group having an alicyclic fused ring or a divalent group obtained by combining the preceding groups.)
Description
Technical field
The present invention relates to a kind of to release the positive type photosensitive organic compound that gas is characterized less.More specifically, relate to
And a kind of photosensitive polymer combination forming dielectric film, described composition is for dielectric films such as organic electroluminescent devices
In the case of, few at the releasing gas carrying out to the insulating film pattern being formed producing after heat is burnt till, can suppress as organic
The generation that the blackspot of the degradation phenomena of electroluminescent cell or image shrink.
Background technology
Photosensitive polymer combination is widely used in passing through radioactive ray in the substrate etc. of semiconductor or liquid crystal panel makes
Photoetching process forms fine structure.As photosensitive polymer combination, the resin combination of novolac resin system is in semiconductor system
Make with etc. in be widely used (referring for example to patent document the 1st, 2.), but existing novolac resin system photoresist group
The gas that compound is released from film after heating is burnt till is many, and the pollution to light-emitting component etc. becomes problem.
Photosensitive polymer combination is applied not only to semiconductor manufacturing, and the inscape also serving as light-emitting component is made
With.For example, identification is high because of self-luminous for organic electroluminescent device, and is complete solid-state components, therefore, has resistance to impact
The feature such as excellent, so, receive much concern as the light-emitting component in display device, wherein comprise the works such as dielectric film.?
The dielectric film of organic electroluminescent device or fine structure thing form in purposes, require photosensitive resin film:(1) cross sectional shape
For along conical by its shape;(2) gas that the resin film after heating is burnt till is released is few.
In order to improve the releasing gas of the resin film after heating is burnt till, can illustrate novolac resin and benzo
The photonasty tree that piperazine compound, carbodiimide compound, triazine thiol compound or bismaleimide compound are combined into
Lipid resin combination (such as patent document 3).But, in this technology, the low novolac resin of heat resistance is principal component,
The viewpoint aspect reducing releasing gas is insufficient.
In addition, as the high resin of heat resistance, it is proposed that containing polyimides, polyphenyl simultaneouslyAzoles or their precursor and
Novolac resin, crosslinking agent, the photosensitive polymer combination (patent document 4~6) of naphthalene quinone di-azido compound.But, this
In a little technology, due to the reduction of the heat resistance due to novolac resin, therefore, the minimizing of gas insufficient is released.
Prior art literature
Patent document
Patent document 1:Japanese Laid-Open Patent Publication 62-260147 publication
Patent document 2:Japanese Unexamined Patent Publication 5-94013 publication
Patent document 3:Japanese Unexamined Patent Publication 2009-222923 publication
Patent document 4:Japanese Unexamined Patent Publication 2005-250160 publication
Patent document 5:Japanese Unexamined Patent Publication 2008-268788 publication
Patent document 6:Japanese Unexamined Patent Publication 2009-198957 publication
Content of the invention
Invent problem to be solved
In view of above-mentioned present situation, it is an object of the invention to, the gas providing a kind of film after heating is burnt till to release is few
Positive type photosensitive organic compound.
For solving the means of problem
The present inventor etc. conduct in-depth research, it is found that:Normal Photosensitive resin group containing polyene-based phenol resin
The heat resistance of compound is good, so containing polyene-based phenol resin, alkali soluble resin, quinone di-azido compound composition permissible
Form pattern by photoetching process, and it is few to release gas after can realizing burning till this pattern.
The present invention is a kind of positive type photosensitive organic compound, the polyene-based phenol resin containing the structure with formula (1), alkali
Soluble resin (wherein, not including the polyene-based phenol resin with the structure of formula (1)) and quinone di-azido compound,
(in formula (1), R1、R2And R3Separately represent that hydrogen atom, the alkyl of carbon number 1~5, formula (2) represent
Thiazolinyl, the alkoxyl of carbon number 1~2 or hydroxyl, and R1、R2And R3In at least 1 thiazolinyl representing for formula (2).Q is respectively
Expression-CR independently4R5The alkylidene of-expression, the cycloalkylidene of carbon number 5~10, the divalent organic base with aromatic rings
Roll into a ball, there is the divalent organic group of ester ring type condensed ring or by the divalent group of these moiety combinations, R4And R5Independently
Ground represents hydrogen atom, the alkyl of carbon number 1~5, the thiazolinyl of carbon number 2~6, the cycloalkyl of carbon number 5~10 or carbon
The aryl of atomicity 6~12.
In formula (2), R6、R7、R8、R9And R10Separately represent hydrogen atom, the alkyl of carbon number 1~5, carbon atom
The cycloalkyl of several 5~10 or the aryl of carbon number 6~12.* in formula (2) represents the key with the carbon atom constituting aromatic rings
Conjunction portion.).
The present invention comprises following aspect.
[1] a kind of positive type photosensitive organic compound, polyene-based phenol resin, alkali containing the structure with formula (1) are solvable
Property resin (wherein, not including the polyene-based phenol resin with the structure of formula (1)) and quinone di-azido compound,
(in formula (1), R1、R2And R3Separately represent that hydrogen atom, the alkyl of carbon number 1~5, formula (2) represent
Thiazolinyl, the alkoxyl of carbon number 1~2 or hydroxyl, and R1、R2And R3In at least 1 thiazolinyl representing for formula (2).Q is respectively
Expression-CR independently4R5The alkylidene of-expression, the cycloalkylidene of carbon number 5~10, the divalent organic base with aromatic rings
Roll into a ball, there is the divalent organic group of ester ring type condensed ring or by the divalent group of these moiety combinations, R4And R5Independently
Ground represents hydrogen atom, the alkyl of carbon number 1~5, the thiazolinyl of carbon number 2~6, the cycloalkyl of carbon number 5~10 or carbon
The aryl of atomicity 6~12.
In formula (2), R6、R7、R8、R9And R10Separately represent hydrogen atom, the alkyl of carbon number 1~5, carbon atom
The cycloalkyl of several 5~10 or the aryl of carbon number 6~12.* in formula (2) represents the key with the carbon atom constituting aromatic rings
Conjunction portion.).
[2] according to the positive type photosensitive organic compound described in [1], it is characterised in that the structure of formula (1) is formula (3)
Structure,
(in formula (3), R1、R2And R3Represent and the R in formula (1)1、R2And R3The identical meaning.).
[3] according to the positive type photosensitive organic compound described in [2], it is characterised in that have the polyenoid of the structure of formula (3)
Base phenol resin contains the structure of formula (4),
(in formula (4), R1、R2And R3Represent and the R in formula (1)1、R2And R3The identical meaning.P is the integer of 0~50.).
[4] according to the positive type photosensitive organic compound according to any one of [1]~[3], it is characterised in that formula (2) table
The thiazolinyl showing is pi-allyl.
[5] according to the positive type photosensitive organic compound according to any one of [1]~[4], it is characterised in that alkali-soluble
Resin is polyimide precursor.
[6] according to the positive type photosensitive organic compound according to any one of [1]~[5], it is characterised in that described polyamides
Imines precursor is represented by formula (5),
(in formula (5), R11Represent the divalent organic group of carbon number more than 2, R12Represent the trivalent of carbon number more than 2
Or the organic group of tetravalence, R13Represent the organic group of hydrogen atom or carbon number 1~20, R14Represent hydrogen atom or carbon atom
The organic group of several 1~50, m represents the integer that 1 or 2, n represent 5~200.).
[7] according to the positive type photosensitive organic compound described in [6], it is characterised in that the R of formula (5)14Containing unsaturated group
Group.
[8] according to the positive type photosensitive organic compound described in [7], it is characterised in that described unsaturated group is Malaysia
Imide.
[9] according to the positive type photosensitive organic compound described in [8], it is characterised in that described polyimide precursor passes through
Following methods manufactures, and described method comprises following operation:
Operation (i):Make the acid compound that diamine compound that formula (6) represents and formula (7) represent with 1:0.8~0.95 rub
You obtain, than carrying out reacting, the polyamic acid that end has amino;
H2N-R11-NH2(6)
(wherein, x, y represent the integer that 0 or 1, z represent 0~4.)
And
Operation (ii):By making amino and the bismaleimide amine compounds of the end of the polyamic acid obtaining in operation (i)
Thing reaction obtains the polyimide precursor that end has dimaleoyl imino.
[10] according to the positive type photosensitive organic compound according to any one of [1]~[9], it is characterised in that contain many
Thiazolinyl phenol resin 20~50 mass parts, alkali soluble resin 100 mass parts and quinone di-azido compound 20~70 mass parts.
[11] according to the positive type photosensitive organic compound according to any one of [6]~[10], it is characterised in that formula (5)
The solid constituent acid number of the polyimide precursor representing is 110~210mgKOH/g.
[12] a kind of radioactive ray photolithographic structures thing, it obtains by the following method, and described method comprises following operation:
(1) painting process:Positive type photosensitive organic compound according to any one of [1]~[11] for the coating on base material;
(2) drying process:Solvent in positive type photosensitive organic compound after coating is removed;
(3) exposure process:Irradiate radioactive ray across photomask;
(4) developing procedure:Developed by alkali and form pattern;And
(5) heating treatment step:Heat at a temperature of 150~350 DEG C.
[13] according to the radioactive ray photolithographic structures thing described in [12], it is characterised in that temperature when thermal weight loss is 5 mass %
It is more than 350 DEG C.
Invention effect
According to the present invention it is possible to the positive-type photolithography photonasty tree that the gas of the film releasing that offer is after heat is burnt till is few
Oil/fat composition.Especially by organic electroluminescent device use, can manufacture there is no concern that because gas release and cause
The element of performance degradation.
Detailed description of the invention
Hereinafter, the present invention is described in detail.
(polyene-based phenol resin)
Polyene-based phenol resin can be by making phenol resol resins, cresol novolac resin, triphenyl methane type
The known phenol such as phenol resin, phenol aralkyl resin, xenyl aralkyl-phenol resin, phenol-dicyclopentadiene copolymer resin
The hydroxyl generation thiazolinyl etherificate of resin, and then make thiazolinyl ether generation Claisen rearangement obtain.
Polyene-based phenol resin used in the photosensitive polymer combination of the present invention has the structure of formula (1).By containing
There is this resin, the developing property of the photosensitive polymer combination obtaining can be improved, and also contribute to release subtracting of gas
Few.Particularly can be work perfectly well as phenol resol resins, cresol novolac resin, the replacement of many vinyl phenols resin
Product and use.
(in formula (1), R1、R2And R3Separately represent that hydrogen atom, the alkyl of carbon number 1~5, formula (2) represent
Thiazolinyl, the alkoxyl of carbon number 1~2 or hydroxyl, and R1、R2And R3In at least 1 thiazolinyl representing for formula (2).Q is respectively
It independently is formula-CR4R5The alkylidene of-expression, the cycloalkylidene of carbon number 5~10, the divalent organic base with aromatic rings
Roll into a ball, there is the divalent organic group of ester ring type condensed ring or by the divalent group of these moiety combinations, R4And R5Independently
Ground represents hydrogen atom, the alkyl of carbon number 1~5, the thiazolinyl of carbon number 2~6, the cycloalkyl of carbon number 5~10 or carbon
The aryl of atomicity 6~12.
In formula (2), R6、R7、R8、R9And R10Separately represent hydrogen atom, the alkyl of carbon number 1~5, carbon atom
The cycloalkyl of several 3~10 or the aryl of carbon number 6~12.* in formula (2) represents the key with the carbon atom constituting aromatic rings
Conjunction portion.)
R in formula (1)1、R2And R3Represent the thiazolinyl shown in hydrogen atom, the alkyl of carbon number 1~5, formula (2), carbon atom
The alkoxyl of several 1~2 or hydroxyl, and R1、R2And R3In at least 1 thiazolinyl representing for formula (2).
R in formula (1)1、R2And R3In, as the concrete example of the alkyl of carbon number 1~5, can enumerate:Methyl, second
Base, n-propyl, isopropyl, normal-butyl, sec-butyl, the tert-butyl group, n-pentyl etc..Alkoxyl concrete as carbon number 1~2
Example, can enumerate methoxyl group, ethyoxyl.
In the thiazolinyl that formula (2) represents, R6、R7、R8、R9And R10Separately represent hydrogen atom, the alkane of carbon number 1~5
The aryl of base, the cycloalkyl of carbon number 5~10 or carbon number 6~12.As the concrete example of the alkyl of carbon number 1~5,
Can enumerate:Methyl, ethyl, n-propyl, isopropyl, normal-butyl, sec-butyl, the tert-butyl group, n-pentyl etc..As carbon number 5
The cycloalkyl of~10, can enumerate:Cyclopenta, cyclohexyl, methylcyclohexyl, suberyl etc..Virtue as carbon number 6~12
The concrete example of base, can enumerate:Phenyl, aminomethyl phenyl, ethylphenyl, xenyl, naphthyl etc..As R6、R7、R8、R9And R10,
It is preferably separately the alkyl of hydrogen atom or carbon number 1~5.The thiazolinyl representing as preferred formula (2), from reactivity
From the aspect of, pi-allyl, methacrylic, more preferably pi-allyl can be enumerated.And, R1、R2And R3In, most preferably one
For pi-allyl or methacrylic, other 2 is hydrogen atom.
Q is separately formula-CR4R5-represent alkylidene, carbon number 5~10 cycloalkylidene, there is aromatic rings
Divalent organic group, there is the divalent organic group of ester ring type condensed ring or by the divalent group of these moiety combinations.
R4And R5Separately represent hydrogen atom, the alkyl of carbon number 1~5, the thiazolinyl of carbon number 2~6, carbon number 5~10
Cycloalkyl or the aryl of carbon number 6~12.R4And R5In, as the concrete example of the alkyl of carbon number 1~5, Ke Yiju
Go out:Methyl, ethyl, n-propyl, isopropyl, normal-butyl, sec-butyl, the tert-butyl group, n-pentyl etc..Alkene as carbon number 2~6
The concrete example of base, can enumerate:Vinyl, pi-allyl, cyclobutenyl, pentenyl, hexenyl etc..As carbon number 5~10
Cycloalkyl, can enumerate:Cyclopenta, cyclohexyl, methylcyclohexyl, suberyl etc..Tool as the aryl of carbon number 6~12
Style, can enumerate:Phenyl, aminomethyl phenyl, ethylphenyl, xenyl, naphthyl etc..R4And R5It is separately preferably hydrogen former
Son or the alkyl of carbon number 1~3, most preferably hydrogen atom.
The concrete example of the cycloalkylidene of the carbon number 5~10 representing as Q, can enumerate:Cyclopentylene, sub-hexamethylene
Base, methylcyclohexylidene, cycloheptylidene etc..As the concrete example of the divalent organic group with aromatic rings, can enumerate:Sub-benzene
Base, xylene, naphthylene, biphenylene, fluorenylidene, anthrylene, xylylene, 4,4-methylene diphenylene, formula (8)
The base etc. representing.
As the concrete example of the divalent organic group with ester ring type condensed ring, sub-dicyclopentadienyl etc. can be enumerated.
In polyene-based phenol resin used in the photosensitive polymer combination of the present invention, from alkali-developable, release gas
From the aspect of, as particularly preferred polyene-based phenol resin, the polyene-based phenol tree with the structure that formula (3) represents can be enumerated
Fat.
(in formula (3), R1、R2And R3Represent and the R in formula (1)1、R2And R3The identical meaning.)
Preferred R1、R2And R3With the preferred R in formula (1)1、R2And R3Equally.
Phenolic hydroxyl group ionizes in the presence of alkali compounds, can be dissolved in water, therefore, from alkali-developable
Viewpoint is set out, and phenolic hydroxyl group needs for more than a certain amount of.Therefore, the structure that formula (1) or formula (3) represent is in polyene-based phenol resin
It is preferably 50~100 mass %, more preferably 70~100 mass %.The polyene-based phenol resin of the structure containing formula (3) is further
The polyene-based phenol resin that particularly preferably formula (4) represents.
(in formula (4), R1、R2And R3Represent and the R in formula (1)1、R2And R3The identical meaning.In addition, p be 0~50 whole
Number.)
In addition, the number-average molecular weight of the polyene-based phenol resin used in the present invention is preferably 800~5000, more preferably
1000~3000.If number-average molecular weight is less than 800, then the quantitative change releasing gas is many, and when it is more than 5000, alkali-developable drops
Low.
It should be noted that number-average molecular weight and weight average molecular weight in the application are the polyphenyl being obtained by GPC mensuration
The value of ethene conversion.
(manufacture method of polyene-based phenol resin)
The polyene-based phenol resin of the structure with formula (1) used in the present invention is by becoming the phenol resin of raw material
Hydroxyl carry out thiazolinyl etherificate after occur Claisen rearangement react and make thiazolinyl reset ortho position or the contraposition of original hydroxyl
Obtained from resin.
Raw material phenol resin as the polyene-based phenol resin of the structure with formula (1), it is possible to use there is the structure of formula (9)
Known phenol resin.
(in formula (9), X1、X2And X3Separately represent hydrogen atom, the alkyl of carbon number 1~5, carbon number 1~2
Alkoxyl or hydroxyl, and the taking of the carbon atom bonding that the carbon atom of the phenyl ring being bonded with relative to hydroxyl is ortho position or contraposition
At least 1 of Dai Jizhong is hydrogen atom.Q represents the meaning identical with the Q in formula (1).)
X in formula (9)1、X2And X3In, as the concrete example of the alkyl of carbon number 1~5, can enumerate:Methyl, second
Base, n-propyl, isopropyl, normal-butyl, sec-butyl, the tert-butyl group, n-pentyl etc..Alkoxyl concrete as carbon number 1~2
Example, can enumerate methoxyl group, ethyoxyl.In addition, Q, R4And R5Respectively with Q, the R in formula (1)4And R5Identical.
As the concrete example of the phenol resin that formula (9) represents, can enumerate:Phenol resol resins, cresol novolak
Resin, triphenyl methane type phenol resin, phenol aralkyl resin, xenyl aralkyl-phenol resin, phenol-dicyclopentadiene copolymerization
Resins etc., from the viewpoint of alkali-developable, it may be preferred to use Q is-CR4R5The alkylidene of-expression and R4And R5Former for hydrogen
The phenol resol resins of son, cresol novolac resin.
(the thiazolinyl etherification reaction of phenol resin)
The thiazolinyl etherification reaction of phenol resin can illustrate the following two kinds method:(i) make allyl chloride, methallyl chloride,
The known method that the halogenated alkenes based compounds such as allyl bromide, bromoallylene and phenol resin react;(ii) the carboxylic acid alkene of allyl acetate etc is made
The method that based compound and phenol resin react.
The thiazolinyl etherification reaction using halogenated alkenes based compound can use in such as Japanese Unexamined Patent Publication 2-91113 publication
The method recorded.In addition, the method making carboxylic acid alkenyl compound and phenol resin react can use such as Japanese Unexamined Patent Publication 2011-
Method described in No. 26253 publications.From the aspect of requiring long-term insulating properties, the photosensitive polymer combination of the present invention is excellent
Choosing will not be mixed into and be possible to bring the upper of the dysgenic halogen compound from halogenated alkenes based compound to long-term insulating properties
State the method for (ii).
Halogenated alkenes based compound or alkenyl carboxylate are preferably 0.3~1.0 equivalent relative to the addition amount of phenolic hydroxyl group, more
It is preferably 0.5~1.0 equivalent.If being less than 0.3 equivalent, then there is the reaction with BMI after Claisen rearangement
Property reduce situation.
(the Claisen rearangement reaction of polyene-based ether resin)
Target polyene-based phenol resin can be by making to utilize the method described in above-mentioned " the thiazolinyl etherification reaction of phenol resin "
Manufactured polyene-based ether resin generation Claisen rearangement reaction obtains.Claisen rearangement reaction can be by being heated to 100
Temperature, the reaction of~250 DEG C obtain for 1~20 hour.Claisen rearangement reaction can use high boiling solvent, it is also possible to no
Use solvent.In addition, in order to promote rearrangement reaction, the inorganic salts such as sodium thiosulfate, sodium carbonate can be added.Specifically, remember
It is loaded in Japanese Unexamined Patent Publication 2-91113 publication.
Reaction by phenol resol resins → alkene ether resin → (Claisen rearangement reaction) → polyene-based phenol resin
The example of formula is shown in following reaction equation 1.
(content of polyene-based phenol resin)
It as the content of the polyene-based phenol resin in photosensitive polymer combination, with alkali soluble resin 100 mass parts is
Benchmark, preferably 20~50 mass parts, more preferably 30~40 mass parts.More than 20 mass parts, then 300~400 DEG C
Heat resistance when burning till becomes good, if which is below 50 mass parts, then patternability during alkali development becomes good.
(alkali soluble resin)
The photosensitive polymer combination of the present invention contains alkali soluble resin and (wherein, does not includes having the structure of formula (1)
Polyene-based phenol resin.).Alkali soluble resin makes favorable solubility in aqueous slkali for the composition.
As alkali soluble resin, preferably there is hydroxyl or carboxyl, can enumerate:Phenol resol resins, cresol novolac
Varnish gum, many vinyl phenols resin, containing carboxylic acid acrylic acid series polymeric compounds, containing phenylol acrylic acid series polymeric compounds, contain carboxylic
The silicone resin of acid, the silicone resin containing phenylol, polyphenyl are simultaneouslyAzoles precursor, polyimide precursor, the polyamides containing phenylol are sub-
Amine etc..
Here, as the characteristic of alkali soluble resin, make the resin coating film of 2 μm preferably on a glass, impregnated in
It during 2.38% tetramethylammonium hydroxide aqueous solution, was completely dissolved within 60 seconds.
(polyimide precursor)
In the case of requiring higher heat resistance, polyimide precursor is preferably used as alkali soluble resin.The present invention
Photosensitive polymer combination preferably comprise the polyimide precursor that formula (5) represents.
(in formula (5), R11Represent the divalent organic group of carbon number more than 2, R12Represent the trivalent of carbon number more than 2
Or the organic group of tetravalence, R13Represent the organic group of hydrogen atom or carbon number 1~20, R14Represent hydrogen atom or carbon atom
The organic group of several 1~50, m represents the integer that 1 or 2, n represent 5~200.)
In formula (5), R11And R12Preferably having aromatic ring, preferred above-mentioned aromatic ring is phenyl ring and naphthalene nucleus.As R11
Example, can enumerate:
Deng.As R12Example, can enumerate:
Deng.In addition, as R13The example of organic group of carbon number 1~20, can enumerate:Methyl, ethyl, propyl group,
Butyl, amyl group, hexyl, trimethyl silyl, phenyl, hydroxy phenyl, carboxyl phenyl, methyl carboxyl phenyl etc..Show to alkali
From the aspect of the dissolubility of shadow liquid, preferably hydrogen atom, hydroxy phenyl or carboxyl phenyl.As R14The having of carbon number 1~50
The example of machine group, is carboxylic acid compound, carboxylic acid anhydrides or maleimide and the reacted residue of amino, shows alkali to adjust
The dissolubility of shadow liquid and suitably select.Now, preferably the solid constituent acid number of the compound of formula (5) is set to 110~
210mgKOH/g.If the solid constituent acid number of the compound of formula (5) is more than 110mgKOH/g, then coordinate polyene-based phenol tree
When fat and quinone di-azido compound, becoming good to the dissolubility of alkaline developer, if which is below 210mgKOH/g, then alkali shows
The pattern form of movie queen becomes good.In addition, R14Preferably comprise unsaturated group.As unsaturated group, do not limit, can lift
Go out:Dimaleoyl imino, vinyl, pi-allyl, acryloyl group, methylacryloyl etc., wherein, preferably dimaleoyl imino.
Here, the hydrogen atom that dimaleoyl imino is the nitrogen atom bonding with maleimide occurs to depart from and become the form of associative key
Monovalent organic group.R14During containing dimaleoyl imino, carrying out cross-linking reaction with polyene-based phenol resin, therefore, heat resistance is entered
One step improves, so preferably.The preferred number-average molecular weight of the compound of formula (5) is 5000~20000.
The polyimide precursor that formula (5) represents can be by making diamine compound or derivatives thereof and tricarboxylic acids, tetrabasic carboxylic acid
It is dissolved in such as METHYLPYRROLIDONE, gamma-butyrolacton, N, N-dimethyl sulfoxide (DMSO), N, N-Deng acid compound or derivatives thereof
Dimethylacetylamide, N,N-dimethylformamide, propylene carbonate, propylene glycol monomethyl ether, propylene glycol methyl ether acetate, butyl
In cellosolve, ethyl cellosolve equal solvent, and react in the range of-30 DEG C~300 DEG C and obtain.
Now, preferably make diamines or derivatives thereof and acid compound such as tricarboxylic acids, tetrabasic carboxylic acid or derivatives thereof with 1:0.8~
The mol ratio of 0.95 is reacted, so that end becomes amino.Also can make further the amino of end and carboxylic acid compound,
Carboxylic acid anhydrides or maleimide etc. react.
Preferred diamines formula (6) for manufacturing the compound of formula (5) represents.
H2N-R11-NH2(6)
In formula (6), R11R with formula (5)11Identical.
As the concrete example of the diamine compound using, can enumerate:1,4-phenylenediamine, 1,3-phenylenediamine, 4,
4 '-diamino-diphenyl ether, 4,4 '-diaminodiphenyl-methane, 4,4 '-diamino diphenyl sulfone, 4,4 '-diamino-diphenyl
Thioethers etc., these materials can be used alone or mix two or more and use.
Preferred acid compound formula (7) for manufacturing the compound of formula (5) represents.
(wherein, x, y represent the integer that 0 or 1, z represent 0~4.And then for x+y+z > 0, xy=1 when, z=0, xy=0 and
During x+y=1, z=1 or 2, during x=0 and y=0, is z=3 or 4.)
It should be noted that in formula (7), R12R with formula (5)12Identical.
As the concrete example of the acid compound using, can enumerate:Pyromellitic Acid, 3,3 ', 4,4 '-biphenyltetracarboxylic acid,
2,3,3 ', 4 '-biphenyltetracarboxylic acid, 3,3 ', 4,4 '-benzophenone tetracarboxylic, 4,4 '-epoxide two phthalic acid, 3,3 ', 4,
4 '-diphenyl sulfone tetracarboxylic acid, 2,2 '-bis-(3,4-dicarboxyphenyi) HFC-236fas, 2,3,6,7-naphthalenetetracarbacidic acidic, 1,2,5,6-naphthalene
Tetracarboxylic acid, 1,4,5,8 naphthalenetetracarboxylic acid, 1,2,3,4-cyclobutanetetracarboxylic, 1,2,3,4-ethylene-dimalonic acid, 1,2,4,5-ring penta
Alkane tetracarboxylic acid, 1,2,4,5-cyclohexanetetracarboxylic acid, 3,3 ', 4,4 '-dicyclohexyl tetracarboxylic acid, 2,3,5-tricarboxylic cyclopentyl acetic acid
Deng or their acid anhydrides, these materials can be used alone or mix two or more and use.
The maleimide compound reacting as the amino with end, can enumerate:N-phenylmaleimide, to hydroxyl
Phenyl maleimide, a hydroxyphenyl-maleimides, to carboxyl phenyl maleimide, N-dodecyl maleimide
In simple function maleimide compound, double (4-maleimidophenyl) methane, 4-methyl isophthalic acid, 3-dimaleimide base
Dimaleoyl imino compound, three (the 4-Malaysia acyls such as benzene, double (3-ethyl-5-methyl-4-maleimidophenyl) methane
Imido grpup phenyl) four Malaysias such as three maleimide based compounds, double (3,4-dimaleimide base phenyl) methane such as methane
The polymaleimide based compound such as imide compound and poly-(4-dimaleoyl imino styrene), these materials can be single
Solely use or mix two or more and use.
(quinone di-azido compound)
The positive type photosensitive organic compound of the present invention contains quinone di-azido compound as radiation-sensitive compound.
As quinone di-azido compound, can enumerate:Obtained from the sulfonic acid of quinone two nitrine is bonded with polyol with the form of ester
Compound;The sulfonic acid of quinone two nitrine be bonded with multiamino compound in the way of sulfonamide obtained from compound;Quinone two nitrine
Sulfonic acid be bonded with polyhydroxy multiamino compound in the way of ester and/or sulfonamide obtained from compound etc..From exposure portion
From the viewpoint of the contrast in unexposed portion, the preferably functional group of these polyols or multiamino compound is overall
50 moles of more than % are by quinone two azide substitution.By using this quinone di-azido compound, can obtain as Conventional UV
Carry out the photoresist of photosensitive eurymeric under the i ray (365nm) of the mercury lamp of line, h ray (405nm), g ray (436nm)
Composition.
As polyol, can enumerate:Bis-Z、BisP-EZ、TekP-4HBPA、TrisP-HAP、TrisP-PA、
TrisP-SA、TrisOCR-PA、BisOCHP-Z、BisP-MZ、BisP-PZ、BisP-IPZ、BisOCP-IPZ、BisP-CP、
BisRS-2P、BisRS-3P、BisP-OCHP、メチレントリス-FR-CR、BisRS-26X、DML-MBPC、DML-MBOC、
DML-OCHP、DML-PCHP、DML-PC、DML-PTBP、DML-34X、DML-EP、DML-POP、ジメチロール-BisOC-
P、DML-PFP、DML-PSBP、DML-MTrisPC、TriML-P、TriML-35XL、TML-BP、TML-HQ、TML-pp-BPF、
TML-BPA, TMOM-BP, HML-TPPHBA, HML-TPHAP (being trade name above, Honshu Chemical Ind's system),
BIR-OC、BIP-PC、BIR-PC、BIR-PTBP、BIR-PCHP、BIP-BIOC-F、4PC、BIR-BIPC-F、TEP-BIP-A、
46DMOC, 46DMOEP, TM-BIP-A (being trade name above, rising sun organic material Industrial Co., Ltd system), 2,6-dimethoxy first
Base-4-TBP, 2,6-dimethoxy-methyl-paracresol, 2,6-diacetoxy methyl-paracresol, naphthols, tetrahydroxy
Benzophenone, gallic acid methyl esters, bisphenol-A, bis-phenol E, methylene bis-phenol, BisP-AP (above be trade name, Honshu chemistry work
Industry Co., Ltd. system) etc., but it is not limited to these.
As the example of quinone di-azido compound, can enumerate:The 1,2-naphthoquinones two nitrine-4-sulphur of above-mentioned polyol
Acid esters or 1,2-naphthoquinones two nitrine-5-sulphonic acid ester.
Quinone di-azido compound, when with exposures such as ultraviolet lights, generates carboxyl through the reaction shown in following reaction equation 2.
By generating carboxyl, the part being exposed (epithelium) becomes to be dissolvable in water aqueous slkali, manifests alkali-developable.
The content of the quinone di-azido compound in photosensitive polymer combination is different because of the quinone di-azido compound of use,
On the basis of alkali soluble resin 100 mass parts, preferably 20~70 mass parts, more preferably 30~60 mass parts.It is 20 matter
When more than amount part, alkali-developable is good.In addition, below if 70 mass parts, then the thermal weight loss of more than 300 DEG C is not variable greatly.
The photosensitive polymer combination of the present invention can be dissolved in solvent and use with solution state.For example, by polyene-based phenol
Resin, alkali soluble resin are dissolved in solvent, mix quinone di-azido compound, as required in this solution in certain proportion
Thermal curing agents, surfactant or the colouring agent such as dyestuff, pigment, thus can prepare the photosensitive resin composition of solution state
Thing.
As solvent, can enumerate for example:Glycol monoethyl ether, glycol dimethyl ether, Ethylene Glycol Methyl ethylether, ethylene glycol
Ethylene glycol alkyl ether acetic acid esters, the diethylene glycols such as glycol ethers, methylcellosolve acetate, ethyl cellosolve acetate such as single ether
Monomethyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol monoethyl ether, diethyl two
The propylene glycol alkyl ether acetic acid esters such as the diethylene glycol classes such as alcohol monobutyl ether, propylene glycol methyl ether acetate, propylene-glycol ethyl ether acetic acid esters,
Toluene, dimethylbenzene etc. are aromatic hydrocarbon, methyl ethyl ketone, methyl amyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone, ring
The ketones such as hexanone, 2 hydroxy propanoic acid ethyl ester, 2-hydroxy-2-methyl methyl propionate, 2-hydroxy-2-methyl ethyl propionate, ethyoxyl
Ethyl acetate, hydroxyl ethyl acetate, 2-hydroxy-2-methyl methyl butyrate, 3-methoxy methyl propionate, 3-methoxypropionic acid second
Ester, 3-ethoxypropanoate, 3-ethoxyl ethyl propionate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, γ-
The amide-types such as the esters such as butyrolactone, METHYLPYRROLIDONE, N,N-dimethylformamide, DMAC N,N' dimethyl acetamide.These
Solvent can be used alone, it is also possible to combines two or more.
The positive type photosensitive organic compound of the present invention is as any composition, it is possible to use hot radical producing agent is as heat
Curing agent.As preferred hot radical producing agent, organic peroxide can be enumerated specifically, diamyl peroxide can be enumerated
Compound, 2,5-dimethyl-2,5-two (t-butylperoxy) hexane, t-butyl amyl peroxide, di-tert-butyl peroxide,
10 hours half life temperatures such as 1,1,3,3-tetramethyl butyl hydroperoxide, isopropyl benzene hydroperoxide are 100~170 DEG C organic
Peroxide etc..
As for the preferred content of the thermal curing agents in positive type photosensitive organic compound, with polyene-based phenol resin, alkali can
On the basis of total amount 100 mass parts of soluble resin, preferably 0.1~5 mass parts, more preferably 0.5~3 mass parts.
The positive type photosensitive organic compound of the present invention is further used as any composition, for example in order to improve coating or
In order to improve the developability of film, surfactant can be contained.
As this surfactant, can enumerate for example:Polyoxyethylene lauryl ether, polyoxyethylene stearyl base ether, polyoxy
The polyoxyethylene alkyl ether classes such as ethene oleyl ether;The polyoxyethylene such as NONIN HS 240, ethylene nonyl phenyl ether
Aryl ethers;The nonionic systems such as polyoxyethylene dialkyl esters such as polyoxyethylene dilaurate, polyoxyethylene distearate
Surfactant;メガファックF-251、メガファックF-281、メガファックF-430、メガファックF-
444th, メ ガ Off ァ ッ Network R-40 (more than, trade name, Dainippon Ink Chemicals's system), サ Off ロ Application S-242, サ Off ロ Application S-
243rd, サ Off ロ Application S-420, サ Off ロ Application S-611 (being trade name above, ACG セ イ ミ ケ ミ カ Le Co., Ltd. system) etc.
Fluorine system surfactant;Organic siloxane polymer KP323, KP326, KP341 (it is trade name above, SHIN-ETSU HANTOTAI's chemical industry strain
Formula commercial firm system) etc..These materials also can use two or more.As for the amount of this surfactant, with polyene-based phenol resin,
On the basis of total amount 100 mass parts of alkali soluble resin, coordinate below 2 mass parts, below preferably 1 mass parts.
And then, the positive type photosensitive organic compound of the present invention, can be containing the coloring such as dyestuff, pigment as any composition
Material.The coloured materials such as this dyestuff or pigment can be inorganic pigment or organic pigment.As this coloured material
Concrete example, can enumerate:Black pigment or the C.I. such as carbon black, CNT, acetylene black, graphite, iron oxide black, nigrosine, titanium are black
Pigment yellow the 20th, the 24th, the 86th, the 93rd, the 109th, the 110th, the 117th, the 125th, the 137th, the 138th, the 147th, the 148th, the 153rd, the 154th, the 166th, C.I. pigment orange 36,
43rd, the 51st, the 55th, the 59th, the 61st, C.I. Pigment Red 9, the 97th, the 122nd, the 123rd, the 149th, the 168th, the 177th, the 180th, the 192nd, the 215th, the 216th, the 217th, the 220th,
223rd, the 224th, the 226th, the 227th, the 228th, the 240th, C.I. pigment violet 1 the 9th, the 23rd, the 29th, the 30th, the 37th, the 40th, the 50th, C.I. pigment blue 15,15:1、15:
4th, the 22nd, the 60th, the 64th, C.I. pigment Green 7, C.I. pigment brown the 23rd, the 25th, coloring pigments such as 26.
(preparation method)
The positive type photosensitive organic compound of the present invention is by by above-mentioned polyene-based phenol resin, alkali soluble resin, quinone
Two azido compounds and other composition as required are dissolved or dispersed in above-mentioned solvent mixing and prepare, and make according to it
By purpose, suitable solid component concentration can be used, for example, can be set to solid component concentration 10~60 mass %.In addition,
The composition liquid prepared as described above generally filters before use.As the method filtering, such as aperture can be enumerated
The millipore filter etc. of 0.05~1.0 μm.
The positive type photosensitive organic compound of the so prepared present invention, its long-standing storage-stable is also excellent.
(pattern formation method and curing)
When using the positive type photosensitive organic compound of the present invention in radioactive ray photoetching process purposes, first, by the present invention
Positive type photosensitive organic compound coat substrate surface, can by the methods such as heating by solvent by be dried wait and remove
Go, form film.The coating process of the positive type photosensitive organic compound of substrate surface is not particularly limited, example can be used
Such as various methods such as spray-on process, rolling method, Narrow slit, method of spin coating.
After the positive type photosensitive organic compound of the present invention is coated substrate surface, generally by heating (prebake conditions)
Solvent seasoning is made film.Heating condition is also different because of the species of each composition, mixing ratio etc., generally 70~120
Heat the stipulated time at DEG C, if for example on electric hot plate, then heat 1~20 minute, heat 3 in an oven
~60 minutes, it is hereby achieved that film.
Then, via the mask of predetermined pattern, radioactive ray (such as luminous ray, ultraviolet are irradiated to the film through prebake conditions
Line, far ultraviolet, X-ray, electron beam, gamma-rays, synchrotron radioactive ray etc.) etc. (exposure process), thereafter, utilize development
Liquid develops, and removes unwanted part, forms predetermined pattern shape film (developing procedure).As for the eurymeric sense to the present invention
Preferred radioactive ray for photosensitive resin composition, owing to being preferably used naphthalene quinone di-azide sulfonic acid ester as positive light sensitivity chemical combination
Thing, so being the ultraviolet~luminous ray of the wavelength with 250~450nm.As developer solution, for example, can use:Hydrogen-oxygen
Change the inorganic bases such as sodium, potassium hydroxide, sodium carbonate, sodium metasilicate, sodium metasilicate, ammoniacal liquor;The primary amine classes such as ethylamine, n-propyl amine;
The secondary amine classes such as diethylamide, two-n-propyl amine;The tertiary amines such as triethylamine, methyidiethylamine;Dimethylethanolamine, three second
The alcamines such as hydramine;The quaternary ammonium salts such as TMAH, tetraethyl ammonium hydroxide, choline;Pyrroles, piperidines, 1,8-diaza
The aqueous solution of the bases such as cyclic amine such as bicyclic [5.4.0]-7-endecatylene, 1,5-diazabicyclo [4.3.0]-5-nonane.
Alternatively, it is also possible to use water-miscible organic solvent, the surface-actives such as methyl alcohol, the ethanol adding appropriate amount in above-mentioned aqueous alkali
The aqueous solution of agent etc. is as developer solution.Developing time is usually 30~180 seconds, in addition, the method for development can be liquid pool method, spray
Pouring method, infusion process etc. any one.After development, carry out flowing water and clean 30~90 seconds, remove unwanted part, by compressed air or
Compressed nitrogen air-dries, and is consequently formed pattern.Thereafter, this pattern is utilized the heater such as electric hot plate, baking oven, in set point of temperature
For example heat 20~200 minutes at 150~350 DEG C, it is hereby achieved that film, it is also possible to periodically improve temperature
(heating treatment step).
Employ the radioactive ray photolithographic structures thing of the positive type photosensitive organic compound of the present invention making in aforementioned manners
Also can remove volatile ingredient by burning till 350~450 DEG C under conditions of further, make temperature during 5% Mass lost
Spend high radioactive ray photolithographic structures thing.If firing temperature is less than 450 DEG C, then radioactive ray photolithographic structures thing is not susceptible to hot bad
Change.The atmosphere burnt till can in air or under the inert gas atmosphere such as nitrogen any one.Burn till in addition, firing time also depends on
Temperature, preferably 5~60 minutes, more preferably 10~40 minutes.If firing time is less than 5 minutes, then sometimes can't see effect,
When it was more than 60 minutes, productivity ratio reduces sometimes.
Embodiment
Hereinafter, based on embodiment and comparative example, specifically illustrate the present invention, but the present invention is not limited to these in fact
Execute example.
(1) resins synthesis
The manufacture of [Production Example 1] many allyl phenols Resin A-1
3 shape of the mouth as one speaks flasks of 1000mL load by molten for potassium carbonate (Tso Tat Co., Ltd., Japan's system) 201g (1.45mol)
Solution that solution is formed in pure water 150g, phenol resol resins " シ ョ ウ ノ Le " (trade mark) BRG-556 (Showa electrician
Co., Ltd.'s system) 150.0g, reactor is carried out nitrogen displacement and is heated to 85 DEG C.Put into allyl acetate under nitrogen flowing
(Showa Denko K. K's system) 204g (2.04mol), containing 50% water 5%-Pd/C-STD type (by Metal Palladium in activated carbon with
The content of 5 mass % disperses, and the hydrous water in the way of becoming 50 mass % by above-mentioned Metal Palladium and activated carbon dispersion
And the catalyst of the allylation reaction stabilizing, エ ヌ イ ケ system キ ャ ッ ト Co., Ltd. system) 0.62g
(0.291mmol) and triphenylphosphine (uses the activator of the allylation reaction catalyst of above-mentioned palladium, northern emerging chemical industry strain formula
Commercial firm's system) 3.82g (14.6mmol), blanket of nitrogen is warming up to 105 DEG C, after reacting 4 hours, chases after and add allyl acetate 29g
(0.291mol), heating 10 hours is continued.Thereafter stop stirring, stand, be thus separated into the two-layer of organic layer and water layer.Add
Pure water (200g), dissolving to the salt separating out, then, adds toluene 200g, confirms that the temperature being maintained at more than 80 DEG C does not has
After separating out white precipitate, by filtering, (membrane filter of 1 μm (uses ADVANTEC society KST-142-JA by pressurization
(0.3MPa)) Pd/C is reclaimed.This filter residue toluene 100g is cleaned, its cleaning fluid is merged with filtrate.By the water layer of this filtrate
Separate, organic layer water 200g is cleaned 2 times, confirm its cleaning fluid for neutrality.After separating organic layer, under reduced pressure enter
Row concentrates, and obtains the polyallyl ethers resin of the phenol novolak type of brown oil.This material is carried out1H-NMR measures
Results verification:Polyallyl ethers resin containing phenol novolak type is as principal component.The following institute of determination data of feature
State.1H-NMR (400MHz, CDCl3, 27 DEG C), δ 3.6-4.0 (m ,-Ph-CH 2 -Ph-) δ 4.4-4.8 (2H, m ,-CH 2 CH=CH2),
δ 5.1-5.3 (1H, m ,-CH2CH=CHH), δ 5.3-5.5 (1H, m ,-CH2CH=CHH), δ 5.8-6.2 (1H, m ,-CH2CH=
CH2), δ 6.6-7.3 (m, phenyl ring).
It in addition, measure the hydroxyl value of this material, but is nearly no detectable.
Then, the burning of the 500mL being fixed with mechanical agitator put into by the polyallyl ethers resin by phenol novolak type
In Ping.While being stirred with 300rpm, being warming up to 190 degree, carrying out Claisen rearangement reaction 10 in this state little
When, obtain many allyl phenols Resin A-1 of phenol novolak type.The hydroxyl equivalent of many allyl phenols Resin A-1 is 165, can
To confirm the generation of hydroxyl.In addition, number-average molecular weight is 1000, weight average molecular weight is 2400.This material is carried out1H-NMR
The results verification measuring:Many allyl phenols Resin A-1 containing phenol novolak type is as principal component.The determination data of feature
As described below, can confirm that the chemical shift of the hydrogen atom of pi-allyl is moved after Claisen rearangement reaction.1H-NMR
(400MHz, CDCl3, 27 DEG C), δ 3.2-3.4 (2H, m ,-CH 2 CH=CH2), δ 3.6-4.0 (m ,-Ph-CH2-Ph-,-OH), δ
4.6-5.0 (1H, m ,-CH2CH=CHH), δ 5.0-5.3 (1H, m ,-CH2CH=CHH), δ 5.8-6.1 (1H, m ,-CH2CH=
CH2), δ 6.6-7.2 (m, phenyl ring).
For this resin, in formula (4), R1、R2、R3In 1 be pi-allyl, other represent hydrogen atom.
The manufacture of [Production Example 2] polyimide precursor 1
By 4,4 '-diamino-diphenyl ether (Wako Pure Chemical Industries, Ltd.'s system, hereinafter referred to as " ODA ".)10.00g
(0.05 mole) is dissolved in 1-METHYLPYRROLIDONE (Wako Pure Chemical Industries, Ltd.'s system, hereinafter referred to as " NMP ".) 70g, add
Enter 3,3 ', 4,4 '-biphenyltetracarboxylic acid acid anhydride (Wako Pure Chemical Industries, Ltd.'s system, hereinafter referred to as " BPDA ".)13.22g
(0.045 mole), stirs 5 hours at 40 DEG C.Thereafter, double (3-ethyl-5-methyl-4-maleimidophenyl) first is added
(ケ イ ア イ is melted into Co., Ltd.'s system, hereinafter referred to as " BMI-70 " to alkane.) 4.42g (0.01 mole), further at 90 DEG C
Lower stirring 3 hours.After reaction solution is returned to room temperature, devote in acetone 1500mL, reclaim sediment, obtain faint yellow
Solid.Further the solid obtaining is cleaned by water 1500mL, be dried 10 hours with the vacuum drier of 50 DEG C thereafter, gathered
The pale yellow powder of imide precursor 1.The solid constituent acid number of polyimide precursor 1 is 175mgKOH/g.
The manufacture of [Production Example 3] polyimide precursor 2
ODA (Wako Pure Chemical Industries, Ltd.'s system) 10.00g (0.05 mole) is dissolved in NMP (with Wako Pure Chemical Industries strain
Formula commercial firm system) 70g, add BPDA (Wako Pure Chemical Industries, Ltd.'s system) 13.22g (0.045 mole), at 40 DEG C, stir 5
Hour.Thereafter, add to hydroxy-benzyl alcohol (Wako Pure Chemical Industries, Ltd.'s system, hereinafter referred to as " p-HBzOH ".)5.58g
(0.045 mole), stirs 3 hours further at 100 DEG C.After reaction solution is returned to room temperature, devote acetone
In 1500mL, reclaim sediment, obtain faint yellow solid.Further the solid obtaining is cleaned by water 1500mL, thereafter, with 50
DEG C vacuum drier be dried 10 hours, obtain the pale yellow powder of polyimide precursor 2.The solid of polyimide precursor 2 becomes
Acid number is divided to be 150mgKOH/g.
The manufacture of [Production Example 4] polyimide precursor 3
ODA (Wako Pure Chemical Industries, Ltd.'s system) 10.00g (0.05 mole) is dissolved in NMP (with Wako Pure Chemical Industries strain
Formula commercial firm system) 70g, add BPDA (Wako Pure Chemical Industries, Ltd.'s system) 13.22g (0.045 mole), at 40 DEG C, stir 5
Hour.Thereafter, BMI-70 (ケ イ ア イ is melted into Co., Ltd.'s system) 4.42g (0.01 mole) is added, further at 90 DEG C
Stir 3 hours, add p-HBzOH (Wako Pure Chemical Industries, Ltd.'s system) 5.58g (0.045 mole), further at 100 DEG C
Stir 3 hours.After reaction solution is returned to room temperature, devote in acetone 1500mL, reclaim sediment, obtain pale yellow colored solid
Body.Further the solid obtaining is cleaned by water 1500mL, be dried 10 hours with the vacuum drier of 50 DEG C thereafter, obtain polyamides
The pale yellow powder of imines precursor 3.The solid constituent acid number of polyimide precursor 3 is 115mgKOH/g.
The manufacture of [Production Example 5] polyimide precursor 4
ODA (Wako Pure Chemical Industries, Ltd.'s system) 10.00g (0.05 mole) is dissolved in NMP (with Wako Pure Chemical Industries strain
Formula commercial firm system) 70g, add BPDA (Wako Pure Chemical Industries, Ltd.'s system) 13.22g (0.045 mole), at 40 DEG C, stir 5
Hour.Reaction solution is devoted in acetone 1500mL, reclaim sediment, obtain faint yellow solid.Further by consolidating of obtaining
Body water 1500mL cleans, and is dried 10 hours with the vacuum drier of 50 DEG C thereafter, obtains the yellowish toner of polyimide precursor 4
End.The solid constituent acid number of polyimide precursor 4 is 210mgKOH/g.
(2) preparation of positive type photosensitive organic compound and evaluation
Embodiment 1
Using molten as the polyimide precursor 1 of alkali soluble resin for 6 mass parts many allyl phenols Resin A-1 and 20 mass parts
Solution, in METHYLPYRROLIDONE 100 mass parts, adds 9 mass parts as TS-200A (Japan's conjunction of quinone di-azido compound
Become Industrial Co., Ltd's system, the 1 of α, α, α-three (4-hydroxy phenyl)-1-ethyl-4-cumene, 2-naphthoquinones two nitrine-5-sulphur
Acid esters).After visually confirming to dissolve, filter with the millipore filter in 1 μm of aperture, prepare normal Photosensitive resin combination
Thing.
Embodiment 2
Polyimide precursor 1 is changed to polyimide precursor 2, in addition, prepares similarly to Example 1.
Embodiment 3
Polyimide precursor 1 is changed to polyimide precursor 3, in addition, prepares similarly to Example 1.
Embodiment 4
Polyimide precursor 1 is changed to polyimide precursor 4, in addition, prepares similarly to Example 1.
Embodiment 5
Polyimide precursor 1 is changed to phenol resol resins " シ ョ ウ ノ Le " (trade mark) BRG-556 (Showa
Electrician Co., Ltd. system), in addition, prepare similarly to Example 1.
Embodiment 6
Polyimide precursor 1 is changed to cresol novolac resin " シ ョ ウ ノ Le " (trade mark) CRG-951 " (Showa
Electrician Co., Ltd. system), in addition, prepare similarly to Example 1.
Comparative example 1
Polyene-based phenol resin A-1 is changed to cresol novolac resin " シ ョ ウ ノ Le ", and (trade mark) CRG-951 is (clear
With electrician Co., Ltd. system), in addition, prepare similarly to Example 1.
Comparative example 2
Polyimide precursor 1 and polyene-based phenol resin A-1 are all changed to phenol resol resins " シ ョ ウ ノ
Le " (trade mark) BRG-556 (Showa Denko K. K's system), in addition, prepares similarly to Example 1.
Comparative example 3
Polyimide precursor 1 and polyene-based phenol resin A-1 are all changed to cresol novolac resin " シ ョ ウ ノ
Le " (trade mark) CRG-591 (Showa Denko K. K's system), in addition, prepares similarly to Example 1.
Acid number is measured to the polyimide precursor using in each embodiment and each comparative example, to each embodiment and each comparative example
The positive type photosensitive organic compound of middle preparation, evaluation pattern generating formation, alkali-developable, releasing gas.Show the result in table 1.
The evaluation method of the assay method of acid number and pattern formation, alkali-developable and releasing gas is as described below.
[acid number]
It is measured according to JIS K0070.
[patternability and alkali-developable]
Glass substrate (size 100mm × 100mm × 1mm) becomes to be about each reality of spin coating in the way of 2 μm by dry film thickness
Execute example and the positive type photosensitive organic compound of each comparative example, by solvent seasoning 2 minutes at 110 DEG C.Further with equipped with super
The exposure device of high-pressure sodium lamp (trade name マ Le チ ラ イ ト ML-251A/B, ウ シ オ Electric Co., Ltd system), via quartz
The photomask of system is with 600mJ/cm2It is exposed.Use ultraviolet accumulated light meter (trade name UIT-150, light accepting part UVD-
S365, ウ シ オ Electric Co., Ltd system) measure light exposure.The film of exposure is further with 2.38% TMAH water
Solution carries out alkali development, and the live width measuring pattern becomes the alkali developing time roughly the same with the live width of photomask, evaluation pattern generating
Formative.This alkali developing time is 30~100 seconds and can carry out the situation of pattern formation and be judged to zero, by 100~180 seconds
Situation is judged to △, the situation that will deviate from this scope is judged to ×.Photomask as the evaluation object of patternability
The live width of pattern is 50 μm.
Using rotary developing device (AD-1200, Long Ze Industry Co., Ltd system) to carry out alkali development, live width measures and makes to use up
Learn microscope (VH-Z250, Co., Ltd.'s Keyemce system).In addition, the live width at pattern becomes the substantially phase of the live width with photomask
By the presence or absence of the development residue of observation by light microscope exposure portion in same alkali developing time, thus evaluate alkali-developable.To not have
The situation having residue is judged to zero, the situation having residue is judged to ×.
[releasing gas]
The positive type photosensitive organic compound of each embodiment of application and comparative example on aluminium sheet, is dried 30 points at 100 DEG C
Clock, makes the film of thickness 10~20 μm.After being dried 30 minutes at 130 DEG C in atmosphere further, under a nitrogen at 250 DEG C
Lower solidification 60 minutes.Use its film, use differential thermogravimetric amount determinator TG/DTA7000 (Co., Ltd. Hitachi Ha イ simultaneously
テ Network サ イ エ Application ス system), under nitrogen atmosphere from room temperature with 10 DEG C/min of intensifications, measure heating decrement as releasing gas.
The temperature of the Mass lost 1% before heating up is designated as Td1, the temperature of Mass lost 5% is designated as Td5, is 370 DEG C by Td5
Above situation is judged to zero, is judged to △ by 350 DEG C less than the situation of 370 DEG C, and the situation that will be less than 350 DEG C judges
For ×.
[table 1]
Industrial applicability
The radiation-ray sensitive composition of the present invention goes for positive radiation linear light lithography.Particularly go for
The formation of the dielectric films such as organic electroluminescent device.
Claims (13)
1. a positive type photosensitive organic compound, the polyene-based phenol resin containing the structure with formula (1), alkali soluble resin
And quinone di-azido compound, wherein, described alkali soluble resin does not includes the polyene-based phenol resin with the structure of formula (1),
In formula (1), R1、R2And R3Separately represent the alkene represented by hydrogen atom, the alkyl of carbon number 1~5, formula (2)
Base, the alkoxyl of carbon number 1~2 or hydroxyl, and R1、R2And R3In at least 1 thiazolinyl representing for formula (2);Q is respectively solely
On the spot expression-CR4R5The alkylidene of-expression, the cycloalkylidene of carbon number 5~10, the divalent organic base with aromatic rings
Roll into a ball, there is the divalent organic group of ester ring type condensed ring or by the divalent group of these moiety combinations, R4And R5Independently
Ground represents hydrogen atom, the alkyl of carbon number 1~5, the thiazolinyl of carbon number 2~6, the cycloalkyl of carbon number 5~10 or carbon
The aryl of atomicity 6~12;
In formula (2), R6、R7、R8、R9And R10Separately represent hydrogen atom, the alkyl of carbon number 1~5, carbon number 5~
The cycloalkyl of 10 or the aryl of carbon number 6~12;* in formula (2) represents the bonding part with the carbon atom constituting aromatic rings.
2. positive type photosensitive organic compound according to claim 1, it is characterised in that
The structure of formula (1) is the structure of formula (3),
In formula (3), R1、R2And R3Represent and the R in formula (1)1、R2And R3The identical meaning.
3. positive type photosensitive organic compound according to claim 2, it is characterised in that the structure with formula (3) is many
Thiazolinyl phenol resin contains the structure of formula (4),
In formula (4), R1、R2And R3Represent and the R in formula (1)1、R2And R3The identical meaning, in addition, the integer that p is 0~50.
4. the positive type photosensitive organic compound according to according to any one of claims 1 to 3, it is characterised in that formula (2) institute table
The thiazolinyl showing is pi-allyl.
5. the positive type photosensitive organic compound according to according to any one of Claims 1 to 4, it is characterised in that alkali-soluble
Resin is polyimide precursor.
6. the positive type photosensitive organic compound according to according to any one of Claims 1 to 5, it is characterised in that
Described polyimide precursor formula (5) represents,
In formula (5), R11Represent the divalent organic group of carbon number more than 2, R12Represent trivalent or the tetravalence of carbon number more than 2
Organic group, R13Represent the organic group of hydrogen atom or carbon number 1~20, R14Represent hydrogen atom or carbon number 1~50
Organic group, m represents the integer that 1 or 2, n represent 5~200.
7. positive type photosensitive organic compound according to claim 6, it is characterised in that the R in formula (5)14Containing insatiable hunger
And group.
8. positive type photosensitive organic compound according to claim 7, it is characterised in that described unsaturated group is Malaysia
Imide.
9. positive type photosensitive organic compound according to claim 8, it is characterised in that described polyimide precursor passes through
Following methods manufactures, and described method comprises following operation:
Operation (i):Make the diamine compound represented by formula (6) with the acid compound represented by formula (7) with 1:0.8~0.95 rub
You obtain, than carrying out reacting, the polyamic acid that end has amino,
H2N-R11-NH2(6)
Wherein, x, y represent the integer that 0 or 1, z represent 0~4;And
Operation (ii):Anti-with bismaleimide compound by the amino that makes the end of the polyamic acid obtaining in operation (i)
End should be obtained there is the polyimide precursor of dimaleoyl imino.
10. the positive type photosensitive organic compound according to according to any one of claim 1~9, containing polyene-based phenol resin 20
~50 mass parts, alkali soluble resin 100 mass parts and quinone di-azido compound 20~70 mass parts.
11. positive type photosensitive organic compounds according to according to any one of claim 6~10, it is characterised in that formula (5) institute
The solid constituent acid number of the polyimide precursor representing is 110~210mgKOH/g.
12. 1 kinds of radioactive ray photolithographic structures things, it obtains by the following method, and described method comprises following operation:
(1) painting process:Positive type photosensitive organic compound according to any one of claim 1~11 for the coating on base material;
(2) drying process:Solvent in positive type photosensitive organic compound after coating is removed;
(3) exposure process:Irradiate radioactive ray across photomask;
(4) developing procedure:Developed by alkali and form pattern;And
(5) heating treatment step:Heat at a temperature of 150~350 DEG C.
13. radioactive ray photolithographic structures things according to claim 12, it is characterised in that temperature when thermal weight loss is 5 mass %
Degree is more than 350 DEG C.
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CN109563223B (en) * | 2016-10-18 | 2021-07-09 | 昭和电工株式会社 | Process for producing polyalkenylphenol compound, curable composition comprising polyalkenylphenol compound, and cured product thereof |
TWI683182B (en) * | 2017-04-07 | 2020-01-21 | 日商昭和電工股份有限公司 | Photosensitive resin composition and method for manufacturing radiation lithography structure |
WO2021240878A1 (en) * | 2020-05-28 | 2021-12-02 | 昭和電工株式会社 | Thermosetting resin composition |
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JP5088169B2 (en) * | 2008-02-25 | 2012-12-05 | 東レ株式会社 | Positive photosensitive resin composition |
JP2013015701A (en) * | 2011-07-05 | 2013-01-24 | Hitachi Chemical Dupont Microsystems Ltd | Photosensitive resin composition, method of manufacturing pattern-cured film using the same, and electronic component |
JP2013130816A (en) * | 2011-12-22 | 2013-07-04 | Nippon Zeon Co Ltd | Resin composition for permanent film and electronic component |
JP6271272B2 (en) * | 2014-01-31 | 2018-01-31 | 昭和電工株式会社 | Radiation-sensitive composition and method for producing radiation lithography structure |
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JPS62260145A (en) * | 1986-05-02 | 1987-11-12 | Tokyo Ohka Kogyo Co Ltd | Positive type photoresist composition |
JP2006133585A (en) * | 2004-11-08 | 2006-05-25 | Nippon Zeon Co Ltd | Radiation-sensitive resin composition and method of forming radiation-sensitive resin pattern |
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CN111538209A (en) * | 2019-02-06 | 2020-08-14 | 昭和电工株式会社 | Photosensitive resin composition, organic EL element partition wall, and organic EL element |
CN111538209B (en) * | 2019-02-06 | 2024-05-14 | 日保丽公司 | Photosensitive resin composition, organic EL element partition wall, and organic EL element |
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