CN106460160A - W-ti sputtering target - Google Patents
W-ti sputtering target Download PDFInfo
- Publication number
- CN106460160A CN106460160A CN201580021546.8A CN201580021546A CN106460160A CN 106460160 A CN106460160 A CN 106460160A CN 201580021546 A CN201580021546 A CN 201580021546A CN 106460160 A CN106460160 A CN 106460160A
- Authority
- CN
- China
- Prior art keywords
- concentration
- powder
- sputtering target
- mass
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Abstract
This W-Ti sputtering target has a composition containing Ti in a range of 5% by mass to 20% by mass and Fe in a range of 25 ppm by mass to 100 ppm by mass, the remainder comprising W and unavoidable impurities, and satisfies the relational expression (Femax-Femin)/(Femax+Femin) <= 0.25, where Femax is the maximum value of the Fe concentration and Femin is the minimum value of the Fe concentration when the Fe concentration is measured in a plurality of locations in the plane of the target.
Description
Technical field
The present invention relates to a kind of for example when installing semiconductor element between the projection that uses and ground electrode, as preventing
The diffusion preventing layer of Elements Diffusion each other forms the W-Ti sputtering target of W-Ti film.
The application advocates the priority of the patent application 2014-207343 based on October 8th, 2014 in Japanese publication,
And its content is applied at this.
Background technology
In the past, when semiconductor chip being installed to substrate, such as Au projection or scolding tin are formed on Al electrode or Cu electrode
Projection etc..
Here, for example in the case of Al electrode with Au projection directly contact, resulting in because Al spreads each other with Au
The intermetallic compound of Al and Au, may make resistance rise or adhesiveness declines.And, for example in Cu electrode and solder bump
The intermetallic compound of Cu and Sn in the case of directly contact, is resulted in because the Sn in Cu and scolding tin spreads each other, may
Resistance can be made to increase or adhesiveness declines.
Thus, for example using the W-Ti sputtering target disclosed in patent documentation 1,2, as anti-between ground electrode and projection
Only the diffusion preventing layer of Elements Diffusion each other forms W-Ti film.
In addition, the W-Ti sputtering target described in patent documentation 1,2 is manufactured by powder sintering respectively.
Here, when forming W-Ti film as diffusion preventing layer between ground electrode and projection, whole in ground electrode
Face forms projection after forming W-Ti film, and removes the W-Ti film in the region not forming projection by etching.But, due to erosion
Carve speed very slow, therefore there is a problem of that the production efficiency of this W-Ti film is poor.
Therefore, there is the W-Ti sputtering target using micro interpolation Fe disclosed in patent documentation 3, so that the W-Ti film being formed
In contain Fe, and the technology of etching speed can be improved.
Patent documentation 1：No. 2606946 publications of Japanese Patent No.
Patent documentation 2：Japanese Unexamined Patent Publication 05-295531 publication
Patent documentation 3：No. 4747368 publications of Japanese Patent No.
However, as described above by interpolation Fe micro in W-Ti film, its etching speed is improved, but in W-Ti
In the case that the Fe concentration of film produces deviation, etching speed localized variation in W-Ti film can be led to, consequently, it is possible to cannot be carried out
Uniform etching.
Therefore, expect that a kind of deviation that can form Fe concentration is less and the W-Ti sputtering of etching speed uniform W-Ti film
Target.
Content of the invention
The present invention completes in view of the foregoing, its object is to provide a kind of deviation that can form Fe concentration relatively
The W-Ti sputtering target of little and etching speed uniform W-Ti film.
In order to solve above-mentioned problem, the W-Ti sputtering target as a mode of the present invention is characterised by having as the following group
Become：Containing more than the Ti in the scope more than 5 mass % and below 20 mass % and 25 mass ppm and below 100 mass ppm
In the range of Fe, and surplus is made up of W and inevitable impurity, and the many places in target surface measure Fe concentration, and will be measured
The maximum of Fe concentration be set to Femax, the minima of Fe concentration is set to FeminIn the case of, meet following relational expression：
(Femax-Femin)/(Femax+Femin)≤0.25.
In the W-Ti sputtering target of the present invention so constituting, due to containing more than 25 mass ppm and below 100 mass ppm
In the range of Fe, therefore, it is possible to improve the etching speed of formed W-Ti film.
And, the many places in target surface measure Fe concentration, the maximum (Fe of the Fe concentration being measuredmax) and Fe concentration
Minima (Femin) meeting above-mentioned relation formula, the deviation of the Fe concentration therefore in target surface is inhibited.Dense therefore, it is possible to form Fe
Degree deviation is less and etching speed uniform W-Ti film.
As described above, being provided according to the present invention, a kind of deviation that can form Fe concentration is less and etching speed is uniform
The W-Ti sputtering target of W-Ti film.
Brief description
Fig. 1 is the flow chart representing the manufacture method of W-Ti sputtering target involved by one embodiment of the present invention.
Fig. 2 is the explanatory diagram locating of the Fe concentration in the target surface of W-Ti sputtering target representing that target surface is rounded.
Fig. 3 is the explanatory diagram locating of the Fe concentration in the target surface of W-Ti sputtering target representing that target surface is rectangular.
Fig. 4 is the explanatory diagram illustrating to measure the position of the etching speed of W-Ti film being formed on substrate in embodiment.
Specific embodiment
Hereinafter, refer to the attached drawing illustrates to the W-Ti sputtering target as embodiments of the present invention.
W-Ti sputtering target involved by present embodiment for example in order to liquid crystal drive IC is engaged COF band, and passes through
Sputter at and form W- as diffusion preventing layer between the Au projection being formed in liquid crystal drive IC and Al weld pad portion (ground electrode)
Use during Ti film.
W-Ti sputtering target involved by present embodiment has following composition：Containing more than 5 mass % and 20 mass % with
Under scope in Ti and 25 mass ppm more than and 100 mass ppm below scope in Fe, and surplus is by W and inevitable
Impurity constitute.
And, the many places in target surface measure Fe concentration, and the maximum of the Fe being measured concentration is set to Femax, by Fe
The minima of concentration is set to FeminIn the case of, meet following relation：
(Femax-Femin)/(Femax+Femin)≤0.25
Hereinafter, illustrate to the reasons why be grouped into is defined as above into.
＜ Ti：More than 5 mass % and ＞ below 20 mass %
In the case that the Ti content in W-Ti sputtering target is less than 5 mass %, formed W-Ti film and ground connection may be made
The adhesiveness of electrode declines.On the other hand, in the case that the Ti content in W-Ti sputtering target is more than 20 mass %, institute can be led to
The resistance of the W-Ti film being formed rises, and possibly cannot pass through the element that formed W-Ti film is substantially prevented from composition projection
The diffusion each other of the element (being Al in present embodiment) of (being Au in present embodiment) and composition ground electrode.
Therefore, in the present embodiment, the content of the Ti in W-Ti sputtering target is specified more than 5 mass % and 20 matter
In the scope of amount below %.In addition, the lower limit of the content of Ti is preferably set to more than 7 mass %, be more preferably set to 9 mass % with
On.And, the upper limit of the content of Ti is preferably set to below 15 mass %, more preferably it is set to below 13 mass %.
＜ Fe：More than 25 mass ppm and ＞ below 100 mass ppm
In the case that the content of the Fe in W-Ti sputtering target is less than 25 mass ppm, possibly cannot fully improve and be formed
W-Ti film etching speed.On the other hand, in the case that the content of the Fe in W-Ti sputtering target is more than 100 mass ppm, can
Can cannot pass through element (being Au in present embodiment) and composition ground connection electricity that formed W-Ti film is substantially prevented from constituting projection
The diffusion each other of the element (being Al in present embodiment) of pole.
Therefore, in present embodiment, the content of the Fe in W-Ti sputtering target is specified more than 25 mass ppm and 100 matter
In the scope of amount below ppm.
In addition, the lower limit of the content of Fe is preferably set to more than 30 mass ppm, further preferably it is set to more than 35 mass ppm.
And, the upper limit of the content of Fe is preferably set to below 75 mass ppm, further preferably it is set to below 50 mass ppm.
＜ (Femax-Femin)/(Femax+Femin)≤0.25 ＞
In the case that the W-Ti sputtering target using present embodiment forms W-Ti film, each atom is from W-Ti sputtering target
Whole target surface sputters out and forms film.
Here, the many places in target surface measure the maximum (Fe of Fe concentration and the Fe concentration being measuredmax) and Fe concentration
Minima (Femin) meet above-mentioned relation formula in the case of, in target surface, the deviation of Fe concentration diminishes.Therefore, splashed using this W-Ti
The deviation of the Fe concentration of the W-Ti film shot at the target and formed also diminishes, and etching speed becomes uniform.
In addition, (Femax-Femin)/(Femax+Femin) it is preferably set to less than 0.2, more preferably it is set to less than 0.15.In addition
(Femax-Femin)/(Femax+Femin) more low better, but extremely reduce (Femax-Femin)/(Femax+Femin) cost can be led to
Increase.Therefore, (Femax-Femin)/(Femax+Femin) can be more than 0.005.
Here, in present embodiment, in the case that the target surface of W-Ti sputtering target is rounded, as shown in Fig. 2 in circle
Outer peripheral portion (2) on the heart (1) and the center by circle mutually orthogonal 2 straight lines, (3), (4), (5) this 5 points measure
Fe concentration, and obtain the maximum (Fe of above-mentioned Fe concentrationmax) with the minima (Fe of Fe concentrationmin).Outer peripheral portion (2), (3),
(4), (5) can be for example the position being about 10mm from the periphery of target to central side.
And, in the case that the target surface of W-Ti sputtering target is rectangular, as shown in figure 3, in the orthogonal intersection point of diagonal (1)
And the corner (2) on each diagonal, (3), (4), (5) this 5 points measure Fe concentration, and obtain the maximum of above-mentioned Fe concentration
(Femax) with the minima (Fe of Fe concentrationmin).Corner (2), (3), (4), (5) can be about to intersection point side from summit
The position of 10mm.
The measurement site number of Fe concentration can be below more than 5 points and 20 points.In the case of being somebody's turn to do, measurement site is permissible
It is the point that pinwheel point, the intersection point from the straight line by its center and target outer peripheral edge are about 10mm to central side.
Then, with reference to the flow chart of Fig. 1, one embodiment of the W-Ti sputtering target manufacturing involved by present embodiment is entered
Row explanation.
As shown in figure 1, the manufacture method of the W-Ti sputtering target involved by present embodiment possesses：Co-grinding operation S01,
Co-grinding carries out the raw material powder of dispensing with the dosage specifying；Sintering circuit S02, heats the raw material powder of co-grinding and burns
Knot；And manufacturing procedure S03, obtained sintered body is processed.
First, as raw material powder, Ti powder, W powder and Fe powder are prepared.Here, as Ti powder, preferably using purity
For more than 99.999 mass %, mean diameter be more than 1 μm and less than 40 μm powder.And, as W powder, preferably use
The powder that purity is more than 99.999 mass %, mean diameter is more than 0.5 μm and less than 20 μm.Additionally, as Fe powder, excellent
Choosing using purity be more than 99.999 mass %, mean diameter be more than 75 μm and less than 150 μm powder.
＜ co-grinding operation S01 ＞
These raw material powder are weighed, so that them is become containing more than 5 mass % and in the following scope of 20 mass %
Fe more than Ti and 25 mass ppm and in the following scope of 100 mass ppm, and the group that surplus is made up of W and inevitable impurity
Become, and this raw material powder of co-grinding.In present embodiment, with the raw material powder of ball mill mixing weighing, followed by hard
Alloy ball, carries out co-grinding by grater device.
By this co-grinding operation S01, Fe powder is ground into mean diameter and is less than 10 μm.
＜ sintering circuit S02 ＞
Then, the raw material powder (mixed powder) to as above co-grinding in vacuum or inert gas atmosphere or in reducing atmosphere
It is sintered.In this sintering circuit S02, it is ground into the Fe powder that mean diameter is less than 10 μm and is uniformly spread in W.
Here, the fusing point Tm preferably according to W-Ti alloy to be manufactured for the sintering temperature in sintering circuit sets.
In this sintering circuit S02, as sintering method, normal pressure-sintered, hot pressing, hip moulding can be applied.
In present embodiment, to graphite molding jig filling raw material powder (mixed powder), by by pressure be set to more than 10MPa and
Below 60MPa, the vacuum hotpressing that temperature is set to more than 1000 DEG C and 1500 DEG C are sintered.
＜ manufacturing procedure S03 ＞
Machining or grinding are implemented to the sintered body obtaining in sintering circuit S02, thus being processed into regulation shape
The sputtering target of shape.
By as above operation, produce the W-Ti sputtering target as present embodiment.With regard to this W-Ti sputtering target, In is made
For scolding tin, it is bonded on Cu or SUS (rustless steel) or the backing plate that is made up of other metals (such as Mo) and uses.
According to the as constructed as above W-Ti sputtering target as present embodiment, due to containing more than 25 mass ppm and 100 matter
Fe in amount below ppm scope, therefore, it is possible to improve the etching speed of formed W-Ti film.
And, the many places in target surface measure Fe concentration, and the maximum (Fe of the Fe concentration being measuredmax) and Fe concentration
Minima (Femin) meet (Femax-Femin)/(Femax+FeminThis relational expression of)≤0.25, the Fe concentration therefore in target surface
Deviation be inhibited.Deviation therefore, it is possible to form Fe concentration is less and etching speed uniform W-Ti film.
And, in present embodiment, by co-grinding Ti powder, W powder and Fe powder, the grain of the Fe powder before sintering
Footpath becomes less than 10 μm, therefore in sintering, Fe particle can be made equably to spread in the W become parent phase, and can make Fe
It is evenly dispersed into whole sintered body.The particle diameter of the Fe powder before sintering is preferably less than 5 μm, more preferably less than 2 μm, but simultaneously
Not limited to this.And, the particle diameter of the Fe powder before sintering is the smaller the better, but the particle diameter extremely reducing the Fe powder before sintering can be led
Cause the increase of cost.Therefore, the particle diameter of the Fe powder before sintering can be more than 0.1 μm.
In addition, in the case of the fine Fe powder directly accounting for overall more than 50% using less than 50 μm of particle,
Need to be regarded as danger to operate, but in present embodiment, the Fe powder that mean diameter is more than 75 μm and less than 150 μm
End and other raw material powder (Ti powder, W powder) are mixed together pulverizing, thus particle diameter is set to less than 10 μm, Fe powder in addition
Ratio is sufficiently low, therefore easily operates.
More than, embodiments of the present invention are illustrated, but the present invention is not limited to this, without departing from the present invention's
Can suitably change in the range of technological thought.
For example, in present embodiment, it is illustrated to using the mode of grater device co-grinding raw material powder, but simultaneously
Not limited to this are it is also possible to pass through additive method co-grinding raw material powder.
In addition, as the method for co-grinding raw material powder, planetary ball mill, vibrator etc. can be enumerated.
As the inevitable impurity in W-Ti sputtering target, Na, K, Ca, Ni, Cr, Mn etc. can be enumerated.These can not be kept away
The impurity exempted from preferably amounts to below 0.01 mass %, but is not limited to this.
Embodiment
Hereinafter, the result of the evaluation test of the action effect evaluating W-Ti sputtering target involved in the present invention is said
Bright.
＜ example ＞ of the present invention
As material powder, preparing purity is 99.999 mass % and mean diameter is 15 μm Ti powder, purity is
99.999 mass % and mean diameter are 1 μm of W powder and purity is 99.999 mass % and mean diameter is 100 μm Fe powder
End, and in the way of the composition becoming as shown in table 1, Ti powder, Fe powder and W powder are weighed.
In the Ti powder, Fe powder and the W powder that weigh, W powder and Fe powder are about the hard alloy system of 5mm with diameter
Grater device (NIPPON COKE＆ENGINEERING CO., the MA1D of LTD.) put into together by ball, and with rotating speed 300ppm
Condition implement the co-grinding of 1 hour under an ar atmosphere.In addition, the impurity in order to prevent from being derived from container when being pulverized and mixed mixes
Enter, in the inner side of the stainless steel of this grater, implement the liner of W paper tinsel.Here, the input weight of hard alloy ball is set
For the input weight of W powder and Fe powder about 10 times.
By rotary mill device, the W powder of co-grinding and Fe powder and Ti powder are mixed, thus obtaining
Mixed-powder.Here, observe the mixed-powder before sintering using EPMA device, and true by the surface analysis image of characteristic X-ray
Determine Fe particle, and confirm its particle diameter.This particle diameter is shown in Table 1.The Fe particle detecting is respectively provided with less than 10 μm
Particle diameter.
Obtained mixed-powder is filled into graphite molding jig, in pressure：15MPa, temperature：1200 DEG C, the holding bar of 3 hours
Pass through vacuum hotpressing under part, thus making hot pressed sintering body, and machining being carried out to obtained hot pressed sintering body, producing
There is diameter：152.4mm, thickness：The W-Ti sputtering target of the example of the present invention of 6mm.
＜ comparative example ＞
As material powder, preparing purity is 99.999 mass % and mean diameter is 15 μm Ti powder, purity is
99.999 mass % and mean diameter are 1 μm of W powder and purity is 99.999 mass % and mean diameter is 100 μm Fe powder
End, and in the way of becoming the composition shown in table 1, Ti powder, Fe powder and W powder are weighed.
Mixed by the Ti powder of rotary mill device weighing, Fe powder and W powder, to obtain mixed powder
End.That is, the pulverizing of raw material powder in comparative example, is not carried out.Here, observing the mixed-powder before sintering using EPMA device, pass through
The surface analysis image of characteristic X-ray determines Fe particle, and confirms its particle diameter.It is shown in Table 1 this particle diameter.The Fe particle detecting
Substantially have using the value shown in table 1 as maximum particle diameter.
Obtained mixed-powder is filled in graphite molding jig, in pressure：15MPa, temperature：1200 DEG C, keep 3 hours
Under the conditions of carry out vacuum hotpressing, thus making hot pressed sintering body.Machining is carried out to obtained hot pressed sintering body, has produced tool
There is diameter：152.4mm, thickness：The W-Ti sputtering target of the comparative example of 6mm.
Fe concentration ＞ in ＜ target surface
In the case that the target surface of obtained W-Ti sputtering target is circular (circular), as shown in Fig. 2 the center (1) from circle
And by center mutually orthogonal 2 straight lines apart from periphery be about the position (2) of 10mm, (3), (4), this 5 points of (5)
Drill bit using hard alloy gathers composition analysis sample.
And, in the case that the target surface of obtained W-Ti sputtering target is rectangle (square target), as shown in figure 3, from diagonal
On the intersection point (1) intersecting and each diagonal be about the position (2) of 10mm, (3), (4) apart from corner, this 5 points of (5) using hard
The drill bit collection composition analysis sample of matter alloy.
Analyze the Fe concentration of these samples by ICP emission spectrometry method.It is shown in Table 2 measurement result.
The formation ＞ of ＜ W-Ti film
Then, the W-Ti sputtering target of the invention described above example and comparative example is welded to anaerobic backing plate made of copper, is installed
To sputter equipment (Co., Ltd. Aifake SIH-450H), and implement spatter film forming under the following conditions.
Substrate：The Si substrate of diameter 100mm
Final vacuum：＜ 5 × 10-5Pa
Substrate and the distance of target：70mm
Power：Direct current 600W
Gas pressure：Ar 1.0Pa
Substrate heats：No
Thickness：300nm
The etching speed of ＜ W-Ti film evaluates ＞
In the Si substrate of such diameter 100mm obtaining, cut out 20mm side from the position at three positions as shown in Figure 4
Shape sample.Further, this sample is cut into two parts of 10mm × 20mm, by the side sample of cutting by constant temperature
Tank is set as impregnating 5 minutes in 31 volume % aquae hydrogenii dioxidis of 30 DEG C of liquid temperature.After aquae hydrogenii dioxidi takes out, with pure
Water fully cleans, and dries up accompanying pure water drop further with dry air, so that sample is dried.
Using field emission scanning electron microscope (FE-SEM：Hitachi High-Technologies
Corporation SU-70) observe the side not impregnated in aquae hydrogenii dioxidi of this sample and impregnate this both sides of side, and survey
Determine the thickness of W-Ti film.Obtain the side of dipping and the film thickness difference being not impregnated with side in aquae hydrogenii dioxidi, this film thickness difference is divided by leaching
The stain time (5 minutes), the etching speed in each position of the substrate having calculated diameter 100mm.It is shown in Table 3 this result.
[table 1]
[table 2]
The deviation of ※ Fe concentration：(Femax-Femin)/(Femax+Femin)
Femax：Fe concentration maxima in target surface
Femin：Fe concentration minima in target surface
[table 3]
In comparative example 1-6, as shown in table 2, the deviation confirming the Fe concentration in target surface becomes big.Fe concentration in target surface
Deviation why becomes big thus it is speculated that its reason is that the pulverizing not carrying out raw material powder is just burnt using the larger Fe particle of particle diameter
Knot.
Especially, in the relatively low comparative example of Fe concentration 2,5, Fe concentration local step-down, and the maximum difference of Fe concentration also becomes
Greatly.
In the W-Ti film of the comparative example 11-16 that the W-Ti sputtering target using this comparative example 1-6 is formed, confirm etching speed
Degree is uneven.
And, the W-Ti film of the comparative example 12,15 being formed in the W-Ti sputtering target of the comparative example 2,5 relatively low using Fe concentration
In, locally confirming etching speed becomes very slow.
And in example 1-6 of the present invention, the deviation confirming the Fe concentration in target surface diminishes.The deviation of the Fe concentration in target surface
Institute diminish thus it is speculated that its reason is the co-grinding by carrying out raw material powder, thus being entered using particle diameter less Fe particle
Go sintering.
And, in the higher example of the present invention 3,6 of the relatively low example of the present invention of Fe concentration 2,5 and Fe concentration, Fe concentration inclined
Difference is also less and stable.
In the W-Ti film of example 11-16 of the present invention that the W-Ti sputtering target using this example 1-6 of the present invention is formed, confirm erosion
Carve speed uniform.
Especially, the W- of the example of the present invention 12,15 being formed in the W-Ti sputtering target of the example of the present invention 2,5 relatively low using Fe concentration
In Ti film, also in W-Ti film, reliably it is added with Fe, and etching speed is stable.
And, the W- of the example of the present invention 13,16 being formed in the W-Ti sputtering target of the example of the present invention 3,6 higher using Fe concentration
In Ti film, the deviation of etching speed is also fully inhibited.
From the results verification of experiment identified above to according to example of the present invention, the deviation that can form Fe concentration is less and lose
Carve speed uniform W-Ti film.
Industrial applicability
According to the W-Ti sputtering target of the present invention, can be formed Fe concentration deviation is less and the uniform W-Ti of etching speed
Film.The W-Ti sputtering target of the present invention is suitable for for example installing between the projection using during semiconductor element and ground electrode, shape
Become the W-Ti film of the diffusion preventing layer of diffusion as the element preventing each other.
Claims (1)
1. a kind of W-Ti sputtering target, it has following composition：Containing the Ti in the scope more than 5 mass % and below 20 mass %
And 25 Fe in the scope more than mass ppm and below 100 mass ppm, and surplus is made up of W and inevitable impurity,
Many places in target surface measure Fe concentration, and the maximum of the Fe being measured concentration is set to Femax, by Fe concentration
Little value is set to FeminIn the case of, meet following relational expression：
(Femax-Femin)/(Femax+Femin)≤0.25.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014207343A JP5999161B2 (en) | 2014-10-08 | 2014-10-08 | W-Ti sputtering target |
| JP2014-207343 | 2014-10-08 | ||
| PCT/JP2015/077729 WO2016056441A1 (en) | 2014-10-08 | 2015-09-30 | W-ti sputtering target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106460160A true CN106460160A (en) | 2017-02-22 |
| CN106460160B CN106460160B (en) | 2018-08-17 |
Family
ID=55653056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580021546.8A Active CN106460160B (en) | 2014-10-08 | 2015-09-30 | W-Ti sputtering targets |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5999161B2 (en) |
| KR (1) | KR20160133571A (en) |
| CN (1) | CN106460160B (en) |
| TW (1) | TWI572722B (en) |
| WO (1) | WO2016056441A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111155061A (en) * | 2018-11-07 | 2020-05-15 | 宁波江丰电子材料股份有限公司 | Preparation method of WTi alloy target |
| CN112055758A (en) * | 2018-11-06 | 2020-12-08 | 三菱综合材料株式会社 | W-Ti sputtering target |
| CN112111713A (en) * | 2020-09-11 | 2020-12-22 | 宁波江丰电子材料股份有限公司 | Preparation method of WTi alloy sputtering target material |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008218693A (en) * | 2007-03-05 | 2008-09-18 | Mitsubishi Materials Corp | W-Ti DIFFUSION-PREVENTING FILM HAVING HIGH ETCHING RATE, AND W-Ti TARGET FOR SPUTTERING FOR FORMING THE SAME |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2606946B2 (en) * | 1990-03-13 | 1997-05-07 | 日立金属株式会社 | Ti-W target material and method of manufacturing the same |
| JPH05295531A (en) * | 1992-04-21 | 1993-11-09 | Toshiba Corp | Ti-w based sputtering target and its production |
| JP5156591B2 (en) * | 2008-11-17 | 2013-03-06 | 出光興産株式会社 | Organic electroluminescence device |
| JP2011058078A (en) * | 2009-09-14 | 2011-03-24 | Toshiba Corp | SPUTTERING TARGET, Ta-W ALLOY FILM USING THE SAME, AND LIQUID CRYSTAL DISPLAY DEVICE |
| US20140360871A1 (en) * | 2012-05-22 | 2014-12-11 | Jx Nippon Mining & Metals Corporation | Fe-Pt-Ag-C-Based Sputtering Target Having C Grains Dispersed Therein, and Method for Producing Same |
| WO2014148588A1 (en) * | 2013-03-22 | 2014-09-25 | Jx日鉱日石金属株式会社 | Tungsten-sintered-body sputtering target and method for producing same |
-
2014
- 2014-10-08 JP JP2014207343A patent/JP5999161B2/en active Active
-
2015
- 2015-09-30 KR KR1020167031186A patent/KR20160133571A/en not_active Application Discontinuation
- 2015-09-30 WO PCT/JP2015/077729 patent/WO2016056441A1/en active Application Filing
- 2015-09-30 CN CN201580021546.8A patent/CN106460160B/en active Active
- 2015-10-02 TW TW104132567A patent/TWI572722B/en active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008218693A (en) * | 2007-03-05 | 2008-09-18 | Mitsubishi Materials Corp | W-Ti DIFFUSION-PREVENTING FILM HAVING HIGH ETCHING RATE, AND W-Ti TARGET FOR SPUTTERING FOR FORMING THE SAME |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112055758A (en) * | 2018-11-06 | 2020-12-08 | 三菱综合材料株式会社 | W-Ti sputtering target |
| CN112055758B (en) * | 2018-11-06 | 2022-03-01 | 三菱综合材料株式会社 | W-Ti sputtering target |
| CN111155061A (en) * | 2018-11-07 | 2020-05-15 | 宁波江丰电子材料股份有限公司 | Preparation method of WTi alloy target |
| CN112111713A (en) * | 2020-09-11 | 2020-12-22 | 宁波江丰电子材料股份有限公司 | Preparation method of WTi alloy sputtering target material |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201619405A (en) | 2016-06-01 |
| TWI572722B (en) | 2017-03-01 |
| KR20160133571A (en) | 2016-11-22 |
| JP2016074962A (en) | 2016-05-12 |
| WO2016056441A1 (en) | 2016-04-14 |
| JP5999161B2 (en) | 2016-09-28 |
| CN106460160B (en) | 2018-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6095162B2 (en) | Cubic boron nitride sintered body | |
| JP6883103B2 (en) | Calcogenide sputtering target and its manufacturing method | |
| CN106460160A (en) | W-ti sputtering target | |
| TWI245076B (en) | Tungsten spattering target and method of manufacturing the target | |
| CN105683407B (en) | Sputter target and its manufacturing method | |
| CN105637114B (en) | The manufacture method of sputtering target and sputtering target | |
| CN105246855A (en) | Sintered oxide and sputtering target, and method for producing same | |
| CN109161858A (en) | A kind of the aluminium-scandium alloy target and its manufacturing method of nitrating | |
| JP5973041B2 (en) | Cu-Ga sputtering target and method for producing Cu-Ga sputtering target | |
| CN109267020A (en) | A kind of preparation method and application of aluminium nitrogen scandium alloy target | |
| Chen et al. | Retained ratio of reinforcement in SAC305 composite solder joints: effect of reinforcement type, processing and reflow cycle | |
| CN110253023A (en) | A kind of kitchen knife and its manufacturing method with diamond | |
| JP2004217990A (en) | Sputtering target, and production method therefor | |
| TWI727460B (en) | W-ti sputtering target | |
| TWI518185B (en) | Composite of carbide cermet/blending metal | |
| JP2020158880A (en) | Mo ALLOY TARGET MATERIAL, AND MANUFACTURING METHOD THEREOF | |
| CN105328193A (en) | Powder metallurgy target material and manufacturing method thereof | |
| TWI674325B (en) | MoNb target | |
| JP5038553B2 (en) | Manufacturing method of sputtering target | |
| JP2017218621A (en) | Target material and method for manufacturing the same | |
| WO2018021105A1 (en) | Cu-Ga SPUTTERING TARGET AND METHOD FOR PRODUCING Cu-Ga SPUTTERING TARGET | |
| JP2020101444A (en) | Transmission electron microscope observation sample and manufacture method of the same | |
| JP2018024933A (en) | Cu-Ga SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME | |
| JP2018193290A (en) | Oxide sintered body and sputtering target | |
| US20220153651A1 (en) | Cubic boron nitride sintered material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |